JPH0276270A - Thermoelectric element - Google Patents
Thermoelectric elementInfo
- Publication number
- JPH0276270A JPH0276270A JP63227846A JP22784688A JPH0276270A JP H0276270 A JPH0276270 A JP H0276270A JP 63227846 A JP63227846 A JP 63227846A JP 22784688 A JP22784688 A JP 22784688A JP H0276270 A JPH0276270 A JP H0276270A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductors
- thermoelectric element
- thermoelectric
- type
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 7
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010949 copper Substances 0.000 abstract description 5
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 238000005546 reactive sputtering Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、赤外線センサ、温度センサ、熱センサ等に用
いられる熱電素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a thermoelectric element used in infrared sensors, temperature sensors, thermal sensors, and the like.
（従来の技術）
従来、この種の熱電素子には、薄膜化された熱電材料か
らなる熱電対が多数直列接続されたサーモパイル型のも
のがある。このサーモパイル型の熱電素子は、熱電対を
多数直列接続しているので、温度差から生じる熱起電力
を加算でき、大きな熱起電力を得ることができる。そし
て、この熱起電力を利用して微少温度差を検知できる赤
外線センサ、温度センサ、熱センサとして利用されてい
る。(Prior Art) Conventionally, this type of thermoelectric element includes a thermopile type in which a large number of thermocouples made of thin film thermoelectric material are connected in series. Since this thermopile-type thermoelectric element has a large number of thermocouples connected in series, thermoelectromotive forces generated from temperature differences can be added together, and a large thermoelectromotive force can be obtained. This thermoelectromotive force is used as an infrared sensor, a temperature sensor, and a heat sensor that can detect minute temperature differences.
また、熱電材料として、コンスタンタン−ニクロムなど
の金属合金あるいはヒ素−テルル、ビスマス−アンチモ
ン−テルル、などの化合物半導体が用いられている。Further, as thermoelectric materials, metal alloys such as constantan-nichrome or compound semiconductors such as arsenic-tellurium and bismuth-antimony-tellurium are used.
（従来技術の問題点）
ところで、熱電素子の熱−電力変換効率を評価する性能
指数をＺとすれば、次のような関係式で表すことができ
る。(Problems with Prior Art) By the way, if the figure of merit for evaluating the heat-power conversion efficiency of a thermoelectric element is Z, it can be expressed by the following relational expression.
Ｚ ＝ α２／にρ
ここで、αはゼーベック係数、Ｋは熱伝導率、ρは比抵
抗である。Z = α2/ρ where α is the Seebeck coefficient, K is the thermal conductivity, and ρ is the specific resistance.
従来の熱電素子に用いる金属合金あるいは化合物半導体
のような熱電材料は、比抵抗が小さいので、上記関係式
より、熱−電力変換効率を高くすることができ、ベルチ
ェ効果を利用した電子冷却素子あるいは電子加熱素子な
どに適している。しかしながら、赤外線センサ、温度セ
ンサ、熱センサ等に用いる場合には、熱−電力変換効率
よりもゼーベック係数の大きな熱電材料を用いることが
重要である。Thermoelectric materials such as metal alloys or compound semiconductors used in conventional thermoelectric elements have low resistivity, so from the above relational expression, it is possible to increase the heat-to-power conversion efficiency. Suitable for electronic heating elements, etc. However, when used in infrared sensors, temperature sensors, thermal sensors, etc., it is important to use a thermoelectric material with a larger Seebeck coefficient than the heat-to-power conversion efficiency.
すなわち、従来の熱電材料では、ゼーベック係数が２０
０〜３００μ■／℃と低いために、赤外線センサ、温度
センサ、熱センサの感度が悪かった。また、従来の熱電
材料は、酸化しやすいために高温下での使用ができなか
った。In other words, conventional thermoelectric materials have a Seebeck coefficient of 20
Since the temperature was as low as 0 to 300μ/°C, the sensitivity of infrared sensors, temperature sensors, and thermal sensors was poor. Furthermore, conventional thermoelectric materials cannot be used at high temperatures because they are easily oxidized.
そこで本発明は、上述した問題点を解決し得るものであ
り、薄膜でかつゼーベック係数が大きく、高温下でも使
用することができる熱電素子を提供することを目的とす
るものである。SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to provide a thermoelectric element that can solve the above-mentioned problems, has a thin film, has a large Seebeck coefficient, and can be used even at high temperatures.
この目的を達成するには、ゼーベック係数が大きく、高
温下で使用できる熱電材料が必要である。To achieve this goal, thermoelectric materials are required that have a large Seebeck coefficient and can be used at high temperatures.
発明者らは、熱電材料として、性能指数が小さいために
、これまで熱電素子としてあまり応用されていなかった
酸化物半導体に着目した。The inventors focused on oxide semiconductors, which have not been widely applied as thermoelectric elements due to their small figure of merit as thermoelectric materials.
（問題点を解決するための手段）
本発明の熱電素子は、絶縁基板上にｖｓｍ化されたＰ型
およびｎ型の熱電材料からなる熱電対を多数直列接続し
た熱電素子において、
前記熱電材料として酸化物半導体を用いたことを特徴と
している。(Means for Solving the Problems) The thermoelectric element of the present invention is a thermoelectric element in which a large number of thermocouples made of P-type and N-type thermoelectric materials made of vsm are connected in series on an insulating substrate, wherein as the thermoelectric material: It is characterized by the use of an oxide semiconductor.
たとえば、前記酸化物半導体として、銅酸化物半導体、
亜鉛酸化物半導体、チタン酸化物半導体。For example, as the oxide semiconductor, a copper oxide semiconductor,
Zinc oxide semiconductor, titanium oxide semiconductor.
ニッケル酸化物半導体、鉄酸化物半導体、コバルト酸化
物半導体がある。There are nickel oxide semiconductors, iron oxide semiconductors, and cobalt oxide semiconductors.
（作用および効果）
本発明の熱電素子は、熱電材料として、ゼーベック係数
が３００〜１０００μＶ／’Ｃと大きい酸化物半導体を
用いるので、赤外線センサ、温度センサ、熱センサに使
用した場合、感度を向上することがｔきる。(Functions and Effects) The thermoelectric element of the present invention uses an oxide semiconductor with a large Seebeck coefficient of 300 to 1000 μV/'C as a thermoelectric material, so it improves sensitivity when used in infrared sensors, temperature sensors, and thermal sensors. There are so many things to do.
また、酸化物半導体を薄膜化するので、センサ自体を小
型化することができ、高感度化、高応答速度化すること
ができる。Furthermore, since the oxide semiconductor is made into a thin film, the sensor itself can be miniaturized, and the sensitivity and response speed can be increased.
さらに、酸化物半導体は、高温下でも安定する熱電材料
なので、高温下で使用することができる。Furthermore, since oxide semiconductors are thermoelectric materials that are stable even at high temperatures, they can be used at high temperatures.
（実施例）
以下に、本発明の実施例を図面を用いて詳細に説明する
。(Example) Examples of the present invention will be described in detail below with reference to the drawings.
第１実施例は、まず、第１図に示すように、Ａｌ２Ｏ３
基板１上に熱電対パターンのマスク２を置き、金属銅タ
ーゲットあるいは酸化銅セラミックターゲットとＡｒ−
０２雰囲気中の酸素との反応性スパッタリング法によっ
て、第２図に示すような薄膜化された３つのＰ型のＣｕ
２Ｏ半導体３，４゜５を形成した。In the first embodiment, first, as shown in FIG.
A thermocouple pattern mask 2 is placed on the substrate 1, and a metal copper target or a copper oxide ceramic target and an Ar-
By reactive sputtering with oxygen in the 02 atmosphere, three P-type Cu films were made into thin films as shown in Figure 2.
A 2O semiconductor 3,4°5 was formed.
次に、熱電対パターンのマスク２を変更して、同様に、
金属銅ターゲットあるいは酸化銅セラミックターゲット
とＡｒ０ｚ雰囲気中の酸素との反応性スパッタリング法
によって、第３図に示すような薄膜化された３つのｎ型
のＣｕＯ半導体６，７゜８を形成した。これらＣｕＯ半
導体６，７．８はＣｕ２Ｏ半導体３，４．５とそれぞれ
導電的に接続され、３つの熱電対９，１０，１１を形成
する。Next, change the mask 2 of the thermocouple pattern and similarly,
Three thin films of n-type CuO semiconductors 6 and 7°8 as shown in FIG. 3 were formed by a reactive sputtering method using a metallic copper target or a copper oxide ceramic target and oxygen in an Ar0z atmosphere. These CuO semiconductors 6, 7.8 are electrically conductively connected to the Cu2O semiconductors 3, 4.5, respectively, forming three thermocouples 9, 10, 11.
そして、熱電対９，１０，１１は、直列となるように直
接接続される。なお、Ｃｕ２Ｏ半導体とＣｕＯ半導体の
接続、および熱電対同士の接続は電極を介して行っても
よい。The thermocouples 9, 10, and 11 are directly connected in series. Note that the connection between the Cu2O semiconductor and the CuO semiconductor and the connection between the thermocouples may be performed through electrodes.
次に、引出電極用パターンのマスクを置き、真空蒸着に
よって、熱電対９のＣｕ２Ｏ半導体３の一端および熱電
対１１のＣｕＯ半導体８の一端のそれぞれからＡｌ２Ｏ
３基板の同一端面に引き出された引出電極１２．１３を
形成し、第４図に示すような熱電素子１４を得た。Next, a mask with a pattern for an extraction electrode is placed, and Al2O is removed from each of one end of the Cu2O semiconductor 3 of the thermocouple 9 and one end of the CuO semiconductor 8 of the thermocouple 11 by vacuum evaporation.
Extracted electrodes 12 and 13 were formed on the same end surface of the three substrates, and a thermoelectric element 14 as shown in FIG. 4 was obtained.
上述した第１実施例では、３組の熱電対を直列接続した
ものを示しだが、所望によって増減してもよい。In the first embodiment described above, three sets of thermocouples are connected in series, but the number may be increased or decreased as desired.
第１実施例において、たとえば、１５組の熱電対を直列
接続した熱電素子の一方の引出電極に２５℃、他方の引
出電極に２０℃の温度を与えてゼーベック係数を測定し
たところ、２０μＶ／”Ｃのゼーベック係数を得ること
ができた。そして、との熱電素子を３００℃で１０００
時間放置した後、ゼーベック係数を測定したが特性の変
化はなかった。In the first example, for example, when the Seebeck coefficient was measured by applying a temperature of 25°C to one extraction electrode and 20°C to the other extraction electrode of a thermoelectric element in which 15 sets of thermocouples were connected in series, the Seebeck coefficient was 20μV/'' I was able to obtain the Seebeck coefficient of C.Then, I was able to obtain the Seebeck coefficient of
After standing for a period of time, the Seebeck coefficient was measured, but there was no change in characteristics.
第２実施例は、ｎ型の酸化物半導体のターゲットとして
、ＴｌＯ２をプレス成形し、Ｈ２／Ｎ２ ＝１１５０
の体積比の雰囲気下、１４００℃程度で焼成し、直径が
約１００ｍｍ、厚みが１ｍｍのユニットを作成した。In the second example, TlO2 is press-molded as an n-type oxide semiconductor target, H2/N2 = 1150
A unit having a diameter of about 100 mm and a thickness of 1 mm was produced by firing at about 1400° C. in an atmosphere with a volume ratio of .
次に、円板上のガラス基板１５上に熱電対パターンのマ
スクを置き、ＴｌＯ２のユニットをＡｒ雰囲気中でスパ
ッタリングすることによって、第５図に示すような薄膜
化されたｎ型のＴｌＯ２半導体１６ないし２３を形成し
た。このＴｌＯ２半導体１６ないし２３は、それぞれ扇
形をなし、ガラス基板１７の任意の１点を円の中心Ａと
し、等間隔で円環状に形成されたものである。Next, a thermocouple pattern mask is placed on the circular glass substrate 15, and TlO2 units are sputtered in an Ar atmosphere to form a thin n-type TlO2 semiconductor 16 as shown in FIG. 23 were formed. The TlO2 semiconductors 16 to 23 each have a fan shape, and are formed in an annular shape at equal intervals, with an arbitrary point on the glass substrate 17 being the center A of the circle.
次に、熱電対パターンのマスクを変更して、Ｐ型のＮ１
０ターゲット＠Ａ−ｒ−０２雰囲気中でスパッタリング
し、第６図に示すような薄膜化されたＰ型のＮＩＯ半導
体２４ないし３１を形成した。このＮＩＯ半導体２４な
いし３１は、ＴｌＯ２半導体１６ないし２３と同様に、
扇形をなし、点Ａｔ−中心に等間隔で円環状に形成され
たものである。ここで、ＴｌＯ２半導体１６ないし２３
とＮｉＯ半導体２４ないし３１とは、１６，２４，１７
，２５゜・・・・・・、２２，３０，２３，３１という
ように交互に韮んでいる。Next, change the mask of the thermocouple pattern to create a P-type N1
Sputtering was performed in an atmosphere of 0 target@A-r-02 to form thin P-type NIO semiconductors 24 to 31 as shown in FIG. The NIO semiconductors 24 to 31, like the TlO2 semiconductors 16 to 23,
It has a fan shape and is formed in a ring shape at equal intervals around the point At-center. Here, TlO2 semiconductors 16 to 23
and the NiO semiconductors 24 to 31 are 16, 24, 17
, 25°..., 22, 30, 23, 31.
次に、電極用パターンのマスクを置き、真空蒸着によっ
て第７図に示すような電極３２ないし３５を形成し、熱
電素子３６を得た。３２は第１接続用電極であり、Ｔｌ
Ｏ２半導体１６ないし２３をＮｉＯ半導体２４ないし３
１をそれぞれ導電的に接続し、８組の熱電対３７ないし
４４を形成するためのものである。この第１接続用電極
３２は、扇形をなす各半導体のガラス基板１７の点Ａ側
に近い端部を接続するように形成される。３３は第２接
続用電極であり、熱電対３７ないし４４を直列接続する
ためのものである。この第２接続用電極３３は、扇形を
なす各半導体のガラス基板１７の周面側の端部を接続す
るように形成される。３４．８５は引出電極であり、Ｔ
ｌＯ２半導体１６の一端およびＮｉＯ半導体３１の一端
からそれぞれガラス基板１７の周面に引き出されるよう
に形成されたものである。Next, a mask with an electrode pattern was placed, and electrodes 32 to 35 as shown in FIG. 7 were formed by vacuum evaporation to obtain a thermoelectric element 36. 32 is a first connection electrode, Tl
O2 semiconductors 16 to 23 are replaced with NiO semiconductors 24 to 3
1 are electrically conductively connected to each other to form eight thermocouples 37 to 44. The first connection electrode 32 is formed so as to connect the ends of the fan-shaped semiconductor glass substrates 17 near the point A side. Reference numeral 33 denotes a second connection electrode, which is used to connect the thermocouples 37 to 44 in series. This second connection electrode 33 is formed so as to connect the edges of the fan-shaped semiconductor glass substrates 17 on the peripheral surface side. 34.85 is an extraction electrode, T
They are formed so as to be drawn out from one end of the 1O2 semiconductor 16 and one end of the NiO semiconductor 31 to the peripheral surface of the glass substrate 17, respectively.
この熱電素子３６は、第８図に示すように電極３３に赤
外線が入射できるような開孔４６を有する遮蔽板４５′
！！：重ね合せ、電極３４および３５に温度差をもたせ
ることによって赤外線センサとして利用できる。This thermoelectric element 36 consists of a shielding plate 45' having an opening 46 through which infrared rays can enter the electrode 33, as shown in FIG.
! ! : Can be used as an infrared sensor by overlapping and creating a temperature difference between the electrodes 34 and 35.
上述した第２実施例では、８組の熱電対を直列接続した
熱電素子を示したが、第１実施例と同様に、所望に応じ
て増減できることは言うまでもない。In the second embodiment described above, a thermoelectric element is shown in which eight sets of thermocouples are connected in series, but it goes without saying that the number can be increased or decreased as desired, as in the first embodiment.
第２実施例において、たとえば、２０組の熱電対を直列
接続した熱電素子を第８図に示した赤外線センサに用い
て感度を測定したところ、３０Ｖ／Ｗであった。そして
、この赤外線センサを３００℃で１０００時間放置した
後、同様に感度の測定をしたところ変化はなかった。In the second example, when a thermoelectric element having, for example, 20 sets of thermocouples connected in series was used in the infrared sensor shown in FIG. 8, the sensitivity was measured to be 30 V/W. After this infrared sensor was left at 300° C. for 1000 hours, the sensitivity was similarly measured, and no change was found.
なお、第２実施例において、Ｐ型の酸化物半導体のター
ゲットとしてＮＩＯユニットを用いたが、ＦｅＯあるい
はＣｏＯを用いてもよく、所望の感度を有する赤外線セ
ンサを得ることができる。Note that in the second embodiment, an NIO unit was used as the target for the P-type oxide semiconductor, but FeO or CoO may also be used, and an infrared sensor having desired sensitivity can be obtained.
第１図ないし第４図は本発明の熱電素子の第１実施例を
説明する平面図、第５図ないし第７図は本発明の熱電素
子の第２実施例を説明する平面図、第８図は本発明の熱
電素子の第２実施例を赤外線センサとして用いたときの
平面図である。
１・・・Ａｌ２Ｏ３基板、２・・・マスク、３ｓ ４ｔ
５−Ｃｕ２Ｏ半導体、
６、Ｌ ８−ＣｕＯ半導体、
９．１０，１１，３７，３８，３９，４０，４１゜４２
．４３，４４・・・熱電対、
１２．１３，３４，３５・・・引出電極、３２・・・第
１接続用電極、３３・・・第２接続用電極、１４．３６
・・・熱電素子、１５・・・ガラス基板、１６．１７，
１８，１９，２０，２１，２２゜２３・・・ＴｌＯ２半
導体、
２４．２５，２６，２７，２８，２９，３０゜８１・・
・ＮＩＯ半導体、４５・・・遮蔽板、４６・・・開孔。1 to 4 are plan views for explaining a first embodiment of the thermoelectric element of the present invention, FIGS. 5 to 7 are plan views for explaining a second embodiment of the thermoelectric element of the present invention, and FIG. The figure is a plan view when the second embodiment of the thermoelectric element of the present invention is used as an infrared sensor. 1... Al2O3 substrate, 2... Mask, 3s 4t
5-Cu2O semiconductor, 6, L 8-CuO semiconductor, 9.10,11,37,38,39,40,41゜42
．． 43, 44... Thermocouple, 12. 13, 34, 35... Extraction electrode, 32... First connection electrode, 33... Second connection electrode, 14.36
...Thermoelectric element, 15...Glass substrate, 16.17,
18,19,20,21,22゜23...TlO2 semiconductor, 24.25,26,27,28,29,30゜81...
- NIO semiconductor, 45... Shielding plate, 46... Opening.
Claims (1)
らなる熱電対を多数直列接続した熱電素子において、 前記熱電材料として酸化物半導体を用いたことを特徴と
する熱電素子。[Claims] A thermoelectric element comprising a large number of thermocouples made of thin P-type and N-type thermoelectric materials connected in series on an insulating substrate, characterized in that an oxide semiconductor is used as the thermoelectric material. thermoelectric element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63227846A JPH0276270A (en) | 1988-09-12 | 1988-09-12 | Thermoelectric element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63227846A JPH0276270A (en) | 1988-09-12 | 1988-09-12 | Thermoelectric element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0276270A true JPH0276270A (en) | 1990-03-15 |
Family
ID=16867290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63227846A Pending JPH0276270A (en) | 1988-09-12 | 1988-09-12 | Thermoelectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0276270A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007246993A (en) * | 2006-03-16 | 2007-09-27 | Saitama Univ | Method for depositing copper oxide thin film |
| ITMO20090101A1 (en) * | 2009-04-28 | 2010-10-29 | Kaptor Light Srl | GROUP OF CONVERSION OF SOLAR AND / OR THERMAL ENERGY IN ELECTRICITY |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587888A (en) * | 1981-07-06 | 1983-01-17 | Citizen Watch Co Ltd | Thermoelectromotive battery |
-
1988
- 1988-09-12 JP JP63227846A patent/JPH0276270A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587888A (en) * | 1981-07-06 | 1983-01-17 | Citizen Watch Co Ltd | Thermoelectromotive battery |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007246993A (en) * | 2006-03-16 | 2007-09-27 | Saitama Univ | Method for depositing copper oxide thin film |
| ITMO20090101A1 (en) * | 2009-04-28 | 2010-10-29 | Kaptor Light Srl | GROUP OF CONVERSION OF SOLAR AND / OR THERMAL ENERGY IN ELECTRICITY |
| EP2246914A1 (en) * | 2009-04-28 | 2010-11-03 | Solution e Partners S.r.l. | A unit for converting solar energy and/or thermal energy into electric power |
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