JPH0269923A - Manufacture of anode for solid electrolytic capacitor - Google Patents
Manufacture of anode for solid electrolytic capacitorInfo
- Publication number
- JPH0269923A JPH0269923A JP22174588A JP22174588A JPH0269923A JP H0269923 A JPH0269923 A JP H0269923A JP 22174588 A JP22174588 A JP 22174588A JP 22174588 A JP22174588 A JP 22174588A JP H0269923 A JPH0269923 A JP H0269923A
- Authority
- JP
- Japan
- Prior art keywords
- die
- friction
- oxide film
- diameter
- metal powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000007787 solid Substances 0.000 title description 6
- 239000000843 powder Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 7
- 230000007423 decrease Effects 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000007257 malfunction Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005470 impregnation Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- 239000012452 mother liquor Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000010413 mother solution Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、素子の加圧成形方法を改良した固体電解コン
デンサ用陽極体の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing an anode body for a solid electrolytic capacitor, which is an improved method of pressure molding an element.
従来の技術 一般に固体電解コンデンサの陽極体としては。Conventional technology Generally used as the anode body of solid electrolytic capacitors.
タンタル、ニオブの様な金属粉末を加圧成形して得られ
た成形体を高温真空中で焼結して得られる多孔質焼結体
が用いられ、この焼結体の表面を電気化学的に酸化して
誘電体酸化皮膜を形成させ、半導体母液に含浸熱分解す
る事によって酸化皮膜上に半導体層を形成し、さらにそ
の外側に陰極層を設けてコンデンサを形成している。A porous sintered body is used, which is obtained by pressure-molding metal powder such as tantalum or niobium and sintering the compact in a high-temperature vacuum.The surface of this sintered body is electrochemically treated. A dielectric oxide film is formed by oxidation, and a semiconductor layer is formed on the oxide film by impregnation in semiconductor mother liquor and thermal decomposition, and a cathode layer is provided on the outside to form a capacitor.
従来、この種の陽極体は、−役に円柱状もしくは直方体
の外形形状で、その中心部にリード線の一部を埋設した
構造の成形体を真空焼結することにより製造している。Conventionally, this type of anode body has been manufactured by vacuum sintering a molded body having a cylindrical or rectangular external shape with a part of a lead wire embedded in the center thereof.
すなわち、この成形体１の製造は、第２図ａ〜Ｃに示す
如く、所望する一定形状の円筒部又は角状の筒部を有す
るダイス３に金属粉末を充てんすると共に、金・萬の陽
極リード２の先端部を金属粉末中に埋め込んだ状態で、
上パンチ５．下パンチ４により上下から加圧して成形体
１を形成し、上パンチ５を上げて所定の長さのり一部２
を確保し上、下パンチ４，５を上げて成形体１をダイス
３より取り出し、これを高温真空中で焼結して、陽極体
を得ている。That is, as shown in FIGS. 2a to 2C, the molded body 1 is manufactured by filling a die 3 having a cylindrical portion or an angular cylindrical portion with a desired constant shape with metal powder, and adding a gold anode. With the tip of lead 2 embedded in the metal powder,
Upper punch 5. Pressure is applied from above and below using the lower punch 4 to form the molded body 1, and the upper punch 5 is raised to form a part 2 of glue to a predetermined length.
The molded body 1 is taken out from the die 3 by raising the upper and lower punches 4 and 5, and is sintered in a high-temperature vacuum to obtain an anode body.
発明が解決しようとする課題
しかしながら従来の方法では、成形体をダイス内で押し
上げる際に、成形体とダイヌ間の摩擦が３・＼−７
強く、成形体側面にダイスによる傷がつき、金属粉末中
に歪みを生ずるため、高温真空中で焼結を行ない、（陽
極酸化した際にこのダイスによる傷に沿って欠陥部を生
じ、漏れ電流が増大するという問題があった。また、成
形体とダイス間の摩擦によって、金属粉末がつぶれて空
孔をふさぎ外表面の空孔度が低下し、半導体母液の含浸
が不完全になるために、誘電体酸化皮膜の電気容量が陰
甑層形成後に十分に引き出せないという問題を有してい
た。Problems to be Solved by the Invention However, in the conventional method, when the compact is pushed up inside the die, the friction between the compact and the die is 3. Sintering is performed in a high-temperature vacuum to cause distortion in the molded body (when anodized, defects are created along the scratches caused by the die, which increases leakage current. Due to the friction between the dies, the metal powder is crushed and closes the pores, reducing the porosity of the outer surface and incomplete impregnation with the semiconductor mother solution, which causes the capacitance of the dielectric oxide film to decrease after the formation of the negative layer. The problem was that it could not be drawn out sufficiently.
本発明は、上記従来の問題点を解決するもので。The present invention solves the above-mentioned conventional problems.
ダイスと成形体の摩擦を小さくする事によって、漏れ電
流が小さく、半導体層による誘電体酸化皮膜の被覆率の
高い固体電解コンデンサの製造方法を提供することを目
的とする。It is an object of the present invention to provide a method for manufacturing a solid electrolytic capacitor with low leakage current and high coverage of a dielectric oxide film with a semiconductor layer by reducing friction between a die and a molded body.
課題を解決するための手段
以上の問題点を解決するために本発明は、加圧成形を行
なう部分の上部の径を下部の径より大きくしだダイスに
金属粉末を充てんすると共に、陽極リードを上部から挿
入し、加圧成形して成形体を形成する工程と、その成形
体を真空焼結する工程とで構成したものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention makes the diameter of the upper part of the part to be pressure formed larger than the diameter of the lower part, fills the die with metal powder, and attaches an anode lead. This consists of a process of inserting the molded body from the top and forming it under pressure to form a molded body, and a process of vacuum sintering the molded body.
作用
この構成により、ダイスと成形体との摩擦を小さくし成
形体表面の傷や、空孔度の低下を抑える事ができ、誘電
体酸化皮膜の形成時の欠陥を減らすと同時に半導体層に
よる誘電体酸化皮膜の被覆率を向上させる事ができる。Function: This structure reduces the friction between the die and the molded body, suppresses scratches on the surface of the molded body and decreases in porosity, reduces defects during the formation of the dielectric oxide film, and at the same time reduces the dielectric strength caused by the semiconductor layer. The coverage of body oxide film can be improved.
実施例
以下、本発明の一実施例について、第１図の図面を用い
て説明する。なお、第１図において、第２図と同一部分
については同一番号を付している。EXAMPLE Hereinafter, an example of the present invention will be described using the drawing of FIG. In FIG. 1, the same parts as in FIG. 2 are given the same numbers.
第１図において、１１は加圧成形部分の上部の径を下部
の径よシ大きくしだダイス１３によって成形したタンタ
ル粉末の円柱状成形体である。ダイス１３の径は、上部
がφ２．Ｑ ｍだ、下部がφ１．８間である。成形体１
１の寸法は上部は径がφ２ 、ＯＭＭで長さが０．５
ｍｍ 、径が徐々に細くなる中央部は長さが２．（ＩＪ
下部は径がφ１．８馴で長さがａｔｓｍｍで、４ｏＴＬ
、！９のタンタル粉末を加圧成形したもの５へ−７
である。これをＩ Ｘｌ ０ ’ ｔｏｒｒの真空中
で。In FIG. 1, reference numeral 11 denotes a cylindrical molded body of tantalum powder, which is molded by a press die 13 whose upper diameter is larger than that of its lower part. The diameter of the die 13 is φ2. Qm, the lower part is between φ1.8. Molded body 1
The dimensions of 1 are φ2 diameter at the top and 0.5 length at OMM.
mm, and the length of the central part where the diameter gradually tapers is 2. (I.J.
The lower part has a diameter of φ1.8 and a length of atsmm, 4oTL.
,! 5-7 is obtained by pressure molding the tantalum powder of No. 9. This is done in a vacuum of I Xl 0' torr.
１０００°Ｃ，２０分間焼結した。そしてｏ、ｓ ｖｏ
／ ％リン酸水溶液中で１２ｏｖ／Ｈｒで昇圧し、１２
０Ｖで２時間保持して陽極酸化し、誘電体酸化皮膜を形
成した。その後、１０ｖｏｌπリン酸水溶液中で８４ｖ
を印加して３分間充電した後、漏れ電流特性を測定し、
誘電体酸化皮膜を電子顕微鏡にて観察し、誘電体酸化皮
膜中の欠陥点数を数えた。次にこれを２５に硫酸水溶液
中にひだして、容量を測定した後、硝酸マンガンへの含
浸及び２５０″Ｃでの熱分解を数回くり返し、陰極層を
形成して容量を測定し、二酸化マンガンによる誘電体酸
化皮膜の被覆率を算出した。結果を表１に示す。Sintering was performed at 1000°C for 20 minutes. and o, s vo
/ % phosphoric acid aqueous solution at 12ov/Hr,
Anodic oxidation was performed by holding at 0 V for 2 hours to form a dielectric oxide film. Then, 84v in 10volπ phosphoric acid aqueous solution
After applying and charging for 3 minutes, measure the leakage current characteristics,
The dielectric oxide film was observed using an electron microscope, and the number of defects in the dielectric oxide film was counted. Next, this was soaked in a sulfuric acid aqueous solution to measure the capacity, and the impregnation with manganese nitrate and thermal decomposition at 250''C were repeated several times to form a cathode layer and the capacity was measured. The coverage rate of the dielectric oxide film with manganese was calculated.The results are shown in Table 1.
６ベー７
以上の様に、本実施例によれば、加圧成形を行なう部分
の上部の径を下部の径より大きくしたダイスで、金属粉
末を成形する事によって、ダイスと成形体の間の摩擦を
大幅に減らす事が可能になり、成形体表面のダイスによ
る傷を少々くする事によって、金属粉末の歪みに起因す
る誘電体酸化皮膜中の欠陥を減少させる事ができ、漏れ
電流を低くする事ができる。又、成形体表面の空孔度の
低下を防止することにより、硝酸マンガンの含浸性が良
くなり ＭｎＯ２による誘電体酸化皮膜の被覆率を向上
させる事ができる。6.7 As described above, according to this embodiment, by molding metal powder with a die in which the diameter of the upper part of the part to be pressure-formed is larger than that of the lower part, the gap between the die and the compact is reduced. It is now possible to significantly reduce friction, and by reducing scratches caused by the die on the surface of the compact, defects in the dielectric oxide film caused by distortion of the metal powder can be reduced, resulting in lower leakage current. I can do that. In addition, by preventing a decrease in the porosity of the surface of the molded body, impregnation with manganese nitrate is improved, and coverage of the dielectric oxide film by MnO2 can be improved.
さらには、成形体をダイスから取シ出すだめに上下パン
チを上げる際に成形体とリード線の結合がダイスと成形
体の摩擦よシ弱く、リード線が成形体から抜ける事によ
る不良についてもその摩擦を小さくする事によって約１
／１ｏに減少した。Furthermore, when raising the upper and lower punches to take out the molded body from the die, the connection between the molded body and the lead wire is weak due to the friction between the die and the molded body, and defects caused by the lead wire coming off from the molded body are also avoided. By reducing friction, approximately 1
/1o.
なお１本実施例では１円柱状の成形体を使用したが、こ
れは角柱状のものでも良い。また、本実施例では成形体
の中央部を徐々に細くするダイスを用いたが単純にダイ
スの径を段階的に細くしても良い。In this embodiment, a cylindrical molded body was used, but it may also be a prismatic molded body. Further, in this embodiment, a die was used that gradually narrowed the central portion of the molded body, but the diameter of the die may simply be tapered stepwise.
発明の効果
以上のように本発明は、加圧成形する部分のダイスの径
を上部より下部において小さくして、金属粉末を加圧成
形し、真空焼結して、固体電解コンデンサ用の陽極体を
製造する事によって、ダイスとの摩擦による成形体表面
の傷や空孔度の低下を防ぎ、誘電体酸化皮膜中の欠陥数
の減少により漏れ電流が小さく、そして半導体母液の含
浸性が良く、半導体層による誘電体液化皮膜の複覆率の
高い固体電解コンデンサ用・陽極体を得ることができる
。Effects of the Invention As described above, the present invention provides an anode body for a solid electrolytic capacitor by making the die diameter of the part to be pressure-formed smaller in the lower part than in the upper part, press-molding metal powder, and sintering it in a vacuum. This prevents scratches on the surface of the compact due to friction with the die and a decrease in porosity, reduces the number of defects in the dielectric oxide film, reduces leakage current, and improves impregnation of the semiconductor mother liquor. It is possible to obtain an anode body for a solid electrolytic capacitor having a high duplication rate of a dielectric liquefied film formed by a semiconductor layer.
第１図ａ Ｎｃは本発明の一実施例による製造方法にお
ける金属粉末成形時の工程を示す断面図。
第２図ａＮＣは従来の製造方法における金属粉末成形時
の工程を示す断面図である。
２・・・・リード線、４・・・・・下パンチ、５・・・
・・・上パンチ、１１・・・・・・成形体、１３・・・
・・ダイス。FIG. 1a Nc is a cross-sectional view showing a step during metal powder molding in a manufacturing method according to an embodiment of the present invention. FIG. 2 aNC is a cross-sectional view showing a process during metal powder molding in a conventional manufacturing method. 2... Lead wire, 4... Bottom punch, 5...
...Upper punch, 11...Molded object, 13...
··dice.
Claims (1)
したダイスに金属粉末を充填すると共に陽極リードを上
部から挿入し加圧成形して成形体を形成する工程と、そ
の成形体を真空焼結する工程とからなることを特徴とす
る電解コンデンサ用陽極体の製造方法。The process of filling metal powder into a die whose upper diameter is larger than the lower diameter of the part to be pressure-formed, inserting an anode lead from the top and press-forming to form a compact, and the process of forming the compact. 1. A method for manufacturing an anode body for an electrolytic capacitor, the method comprising the step of vacuum sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22174588A JPH0269923A (en) | 1988-09-05 | 1988-09-05 | Manufacture of anode for solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22174588A JPH0269923A (en) | 1988-09-05 | 1988-09-05 | Manufacture of anode for solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0269923A true JPH0269923A (en) | 1990-03-08 |
Family
ID=16771560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22174588A Pending JPH0269923A (en) | 1988-09-05 | 1988-09-05 | Manufacture of anode for solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0269923A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774062A (en) * | 1993-07-09 | 1995-03-17 | Rohm Co Ltd | Structure of capacitor element in solid electrolytic capacitor, its compaction method, and its compaction device |
-
1988
- 1988-09-05 JP JP22174588A patent/JPH0269923A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0774062A (en) * | 1993-07-09 | 1995-03-17 | Rohm Co Ltd | Structure of capacitor element in solid electrolytic capacitor, its compaction method, and its compaction device |
| US5461538A (en) * | 1993-07-09 | 1995-10-24 | Rohm Co., Ltd. | Capacitor element for solid electrolytic capacitor |
| US5608601A (en) * | 1993-07-09 | 1997-03-04 | Rohm Co., Ltd. | Capacitor element for solid electrolytic capacitor |
| DE4414101B4 (en) * | 1993-07-09 | 2006-04-27 | Rohm Co. Ltd. | Capacitor element for a solid electrolytic capacitor and pressing device, and method of manufacturing the capacitor |
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