JPH0267763A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0267763A JPH0267763A JP21978488A JP21978488A JPH0267763A JP H0267763 A JPH0267763 A JP H0267763A JP 21978488 A JP21978488 A JP 21978488A JP 21978488 A JP21978488 A JP 21978488A JP H0267763 A JPH0267763 A JP H0267763A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- film
- titanium oxynitride
- barrier metal
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 34
- 239000010936 titanium Substances 0.000 claims abstract description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 7
- 229910010282 TiON Inorganic materials 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】 以下の順序に従って本発明を説明する。[Detailed description of the invention] The present invention will be described in the following order.
Ａ、＋Ｉ業トの利用分野
Ｂ１発明の概要
Ｃ６従来技術
り８発明が解決しようとする問題点
Ｅ６問題点を解決するための手段
Ｆ９作用
Ｇ、実施例［第１図乃至第５図コ
Ｈ６発明の効果
（Ａ、産業上の利用分野）
本発明は半導体装置、特にシリコン半導体基板と、アル
ミニウムあるいはアルミニウム合金からなる電極との間
にバリアメタルを介在させた半導体装置に関する。A. Field of application of +I industry B1 Overview of the invention C6 Prior art 8 Problems to be solved by the invention E6 Means for solving the problems F9 Effects G. Examples [Figures 1 to 5 H6 Effects of the Invention (A. Field of Industrial Application) The present invention relates to a semiconductor device, and particularly to a semiconductor device in which a barrier metal is interposed between a silicon semiconductor substrate and an electrode made of aluminum or an aluminum alloy.
（Ｂ、発明の概要）
本発明は、上記の半導体装置において、バリアメタルの
抵抗率を徒らに高めることなくバリア効果を高めるため
、
バリアメタルを酸素の含有率が３〜７ａｔ％のチタンオ
キシナイトライドＴｉＯＮにより形成したものである。(B. Summary of the Invention) In the above semiconductor device, the present invention uses titanium oxide having an oxygen content of 3 to 7 at% to enhance the barrier effect without unnecessarily increasing the resistivity of the barrier metal. It is made of nitride TiON.
（Ｃ，従来技術）
現在、電極材料としても最も広く用いられてぃるアルミ
ニウムは、シリコン半導体基板との合金化反応で接合の
破壊及び劣化を招く要因となることが判明１ノだ。そし
て、デバイスの微細化により接合深さが非常に浅くなる
傾向にあるのでその接合破壊、及び劣化を防止する必要
性が生じ、そのためにアルミニウム中に１〜２％程度の
シリコンを含有さき合金化反応を防止しようとすること
が行わわている。しかし、このアルミニウム中のシリコ
ンが、このアルミニウム膜のスパッタによる形成後の４
００〜４５０℃での熱処理の後における冷却過程で析出
し、その結果、コンタクトホール内にｍ族元素でρ型不
純物となるアルミニウムを含んだシリコン、即ちＰ型の
シリコンができ、半導体基板のｎ型半導体領域との間に
ｐｎ接合が出来る先程々の問題をもたらす。そこで、ア
ルミニウム電極と半導体基板との間に両者の合金化を阻
むバリアメタルを介在させる技術が採用されるようにな
り、月刊５ｅｆｆｉｉｃｏｎｄｕｃｔｏｒ Ｗｏｒｌｄ
１９８７年３月号［・メタライゼーション・超ＬＳＩへ
のバリアメタルの通用」９０〜９４頁にも記載されてい
るようにチタンナイトライドＴｉＮがバリアメタルとし
て有望視されている。(C, Prior Art) It has been found that aluminum, which is currently most widely used as an electrode material, causes an alloying reaction with a silicon semiconductor substrate to cause bond breakdown and deterioration. Since the junction depth tends to become very shallow due to the miniaturization of devices, there is a need to prevent the junction from breaking and deteriorating, and for this reason, aluminum is alloyed with about 1 to 2% silicon. Efforts are being made to prevent the reaction. However, the silicon in this aluminum is
It precipitates in the cooling process after heat treatment at 00 to 450°C, and as a result, silicon containing aluminum, which is an m group element and becomes a ρ type impurity, is formed in the contact hole, that is, P type silicon, and the n This brings about the aforementioned problem of forming a pn junction with the type semiconductor region. Therefore, a technology has been adopted in which a barrier metal is interposed between the aluminum electrode and the semiconductor substrate to prevent alloying of the two.
As described in the March 1987 issue of ``Metallization and Application of Barrier Metals to VLSI'', pages 90 to 94, titanium nitride TiN is seen as promising as a barrier metal.
（Ｄ、発明か解決しようとする問題点）ところで、チタ
ンナイトライドＴｉＮにより形成したバリアメタルのバ
リア効果について本願発明者が実験を重ねたところバリ
ア効果が必ずしも充分ではないことか判明した。(D. Problems to be Solved by the Invention) By the way, as a result of repeated experiments by the inventor of the present invention regarding the barrier effect of the barrier metal formed of titanium nitride TiN, it was found that the barrier effect is not necessarily sufficient.
そこで、本願発明者は更に実験を重ねチタンナ−ｆ ド
ライドに酸素を添加することによりバリア効果を高める
ことができることを突き止め本発明を為すに至ったので
あり、本発明はバリアメタルのバリア効果を抵抗率を徒
らに増大させることなく高めることを目的とする。Therefore, the inventor of the present invention conducted further experiments and found that the barrier effect can be enhanced by adding oxygen to titanium oxide.The present invention has been developed to overcome the barrier effect of the barrier metal. The aim is to increase the rate without increasing it unnecessarily.
（Ｅ、問題点を解決するための手段）
本発明半導体装置は上記問題点を解決するため、バリア
メタルを酸素の含有率が３〜７ａｔ％のチタンオキシナ
イトライドＴｉＯＮにより形成したことを特徴とする。(E. Means for Solving the Problems) In order to solve the above problems, the semiconductor device of the present invention is characterized in that the barrier metal is formed of titanium oxynitride TiON with an oxygen content of 3 to 7 at%. do.
（Ｆ、作用）
本発明者の実験により得たところのバリアメタル形成用
スパッタガスに加える酸素の流量比とバリア効県のバロ
メータとなる接合リーク電流との関係を示す第２図から
必要なバリア効果を得るには、換言すればリーク電流を
許容限界埴以下にするには酸素０の流量比を４容量％以
上にする必要かあることが解る。ぞして、酸素０の流量
比を４容量％以上にした場合、酸素Ｏの流量比とチタン
オキシナイトライドＴｉＮの含有率との関係を示す第３
図から形成されるチタンオキシナイトライドＴｉＮ０膜
の酸素の含有率は３ａｔ％以上になることが解る。(F, Effect) From Figure 2, which shows the relationship between the flow rate ratio of oxygen added to the sputtering gas for barrier metal formation and the junction leakage current, which is a barometer of barrier effectiveness, obtained through experiments by the inventor, the necessary barrier It can be seen that in order to obtain the effect, in other words, to reduce the leakage current to below the allowable limit, the flow rate ratio of zero oxygen needs to be 4% by volume or more. Therefore, when the flow rate ratio of oxygen 0 is set to 4% by volume or more, the third graph showing the relationship between the flow rate ratio of oxygen O and the content rate of titanium oxynitride TiN
It can be seen from the figure that the oxygen content of the titanium oxynitride TiN0 film formed is 3 at% or more.
一方、酸素０の流量比を約６容１％以上にすると抵抗率
が１０−２Ωａｍ以上となりコンタクト抵抗を許容限度
を超えて大きくすることになることが酸素０の流量比と
チタンオキシナイトライド膜の抵抗率の関係を示す第４
図から解る。そして、酸素０の流量比を６容量％程にし
た場合、できるチタンオキシナイトライド酸素Ｏの含有
率は第２図から約７ａｔ％であることが解る。しかして
、バリアメタルとして酸素０の含有率が３〜７ａｔ％の
チタンオキシナイトライド膜が抵抗率を許容限度内の値
にしつつバリア効果を高くすることができ、最適といえ
るのである。On the other hand, if the flow rate ratio of oxygen 0 is increased to about 6 vol. The fourth equation shows the relationship between the resistivity of
It can be understood from the diagram. When the flow rate ratio of oxygen 0 is set to about 6% by volume, it can be seen from FIG. 2 that the content of titanium oxynitride oxygen O produced is about 7 at%. Therefore, as a barrier metal, a titanium oxynitride film having an oxygen content of 3 to 7 at % can be said to be optimal because it can increase the barrier effect while keeping the resistivity within the permissible limit.
（Ｇ、実施例）［第１図７’７至第５図］以下、本発明
半導体装置を図示実施例に従って詳細に説明する。(G. Embodiment) [FIGS. 1 7'7 to 5] The semiconductor device of the present invention will be described in detail below according to the illustrated embodiment.
第１図は本発明半導体装置の一つの実施例を示す断面図
である。同図において、ｌはＰ型の半導体基板、２は半
導体基板１の選択酸化膜３の下側にあたる部分に形成さ
れたチャンネルストッパ、４は半導体基板１の素子形成
領域内に形成されたソースあるいはドレインを成すｎ＋
型半導体領域、５．６は層間絶縁膜で、５かＳｉＮかう
なる膜で、５００人の膜厚を有し、６がＡｓ５Ｇからな
る膜で、５０００人の膜厚を有している。７は層間絶縁
膜５．６に形成されたコンタクトホール、８は厚さ３０
０人のチタン膜、９は厚さ５００人のチタンオキシナイ
トライドＴｉＯＮ［で、３〜７ａｔ％の酸素を含有して
おり、バリアメタルとしての役割を担う。ＩＯは配線膜
の本体を成す１％のシリコンを含有したアルミニウム合
金膜で、４０００人の膜厚を有している。該アルミニウ
ム合金膜１０は下地としてバリアメタルであるチタンオ
キシナイトライド膜９とコンタクト抵抗を小さくするた
めに敷かれたチタン膜８を有し、コンタクトホール７を
通して半導体領域４に接続されている。。FIG. 1 is a sectional view showing one embodiment of the semiconductor device of the present invention. In the figure, l is a P-type semiconductor substrate, 2 is a channel stopper formed on the lower side of the selective oxide film 3 of the semiconductor substrate 1, and 4 is a source or n+ forming the drain
In the type semiconductor region, 5.6 is an interlayer insulating film, which is a film made of SiN or SiN, and has a thickness of 500 nm, and 6 is a film made of As5G, which has a thickness of 5000 nm. 7 is a contact hole formed in the interlayer insulating film 5.6, 8 is a thickness of 30
The titanium film 9 is a titanium oxynitride TiON with a thickness of 500 mm, which contains 3 to 7 at% oxygen and plays a role as a barrier metal. IO is an aluminum alloy film containing 1% silicon, which forms the main body of the wiring film, and has a thickness of 4000 nm. The aluminum alloy film 10 has a titanium oxynitride film 9 serving as a barrier metal and a titanium film 8 laid down to reduce contact resistance as a base, and is connected to the semiconductor region 4 through a contact hole 7. .
ところで、第２図は、第１図に示すような構造の素子が
形成された半導体ウェハを試料としてバリアメタルであ
るチタンオキシナイトライド膜９形成用のスパッタガス
の酸素流量比を異ならせた場合に接合リーク電流がどう
変化するかを示すところの酸素流量比と接合リーク電流
の関係図であり、同図の右肩部分は接合リーク電流のウ
ェハ内測定点（５点）の位置を黒で塗りつぶして示すウ
ェハの平面図である。ここで、接合リーク電流は逆バイ
アスで５．５ｖの電圧を電極１０と基板１との間に印加
した場合の電流値であり、一般に３１１ＰＡ（ペリフェ
リ１０ｍで１０ｎＡ相当）が許容電流値とされ（第２図
の２点鎖線がそのリーク許容限界値を示している。、）
、それより大きいと好ましくない。同図において、黒丸
・はチタンオキシナイトライド」ｉ９形成後処理（シン
ター＞ｆＡ度を４００℃にした場合を、白丸○は同じく
処理（シンター）温度を４５０℃にした場合を示してい
る。ちなみに、最近は処理温度が高くなる傾向にあり、
４５０℃、６０分の処理に耐えるようにする必要がある
。By the way, FIG. 2 shows the case where the oxygen flow rate ratio of the sputtering gas for forming the titanium oxynitride film 9, which is a barrier metal, is varied using a semiconductor wafer on which an element having the structure shown in FIG. 1 is formed as a sample. This is a diagram showing the relationship between the oxygen flow rate ratio and the junction leakage current, showing how the junction leakage current changes.The right shoulder of the diagram shows the positions of the junction leakage current measurement points (5 points) within the wafer in black. FIG. 2 is a plan view of a wafer shown filled in; Here, the junction leakage current is the current value when a reverse bias voltage of 5.5V is applied between the electrode 10 and the substrate 1, and the allowable current value is generally 311PA (equivalent to 10nA at a periphery of 10m). The two-dot chain line in Figure 2 shows the allowable leak limit value.)
, larger than that is not desirable. In the figure, the black circles indicate the case where the titanium oxynitride i9 formation treatment (sintering > fA degrees was set at 400°C), and the white circles indicate the case where the treatment (sintering) temperature was set at 450°C.By the way, Recently, processing temperatures have tended to be higher.
It is necessary to withstand treatment at 450°C for 60 minutes.
さて、この第２図からスパッタガスの酸素０□の流量比
を４容量％以上にしなければならないことが明らかであ
る。ところで、スパッタガスの酸素０□の流量比がその
ままチタンオキシナイトラー（ド膜の酸素の含有率にな
るわけではない。第３図はスパッタガスの酸素の流量比
とスパッタにより形成されるチタンオキシナイトライド
膜９の酸素の含有率の関係を黒丸・で示すところの流量
比と含有率との関係図であり、この図から酸素０□の流
量比を４容量％にした場合チタンオキシナイトライドＩ
ｌｉ ８の酸素の含有率は３ａｔ％になり、バリアメタ
ルとして必要なバリア効果を持つには酸素の含有率が３
ａｔ％以上でなければならないことが明らかである。ち
なみに、第３図の白丸○は窒素Ｎについての流量比と含
有率の関係を、中に−の入った白丸ＯはチタンＴｉにつ
いての流量比と含有率の関係を示ず。尚、チタンオキシ
ナイトライド膜の組成はＡＥＳ （オージェ）分光によ
り測定した。Now, from FIG. 2, it is clear that the flow rate ratio of oxygen 0□ in the sputtering gas must be 4% by volume or more. By the way, the flow rate ratio of oxygen 0□ in the sputtering gas does not directly determine the oxygen content of the titanium oxynitride film. This is a diagram showing the relationship between the oxygen content of the nitride film 9 and the flow rate ratio indicated by black circles.From this figure, when the flow rate ratio of oxygen 0□ is set to 4% by volume, titanium oxynitride I
The oxygen content of li 8 is 3 at%, and the oxygen content must be 3 at% to have the necessary barrier effect as a barrier metal.
It is clear that it must be at % or more. Incidentally, the white circles ○ in FIG. 3 indicate the relationship between the flow rate ratio and the content rate for nitrogen N, and the white circle O with a - in it does not indicate the relationship between the flow rate ratio and content rate for titanium Ti. The composition of the titanium oxynitride film was measured by AES (Auger) spectroscopy.
ところで、チタンオキシナイトライド膜の酸素の含有率
を高くすればする程バリア効果を大きくすることができ
るが、その反面においてその含有率を高くする程第４図
に示すようにチタンオキシナイトライド膜の抵抗率が高
くなる。第４図はチタンオキシナイトライド膜形成用ス
パッタガスの酸素０２の流量比とスパッタにより形成さ
れたチタンオキシナイトライド膜の抵抗率の関係図であ
り、そして、チタンオキシナイトライド膜の抵抗率は１
０−２Ωｃｍが限度で、それ以上に大きくするとコンタ
クト抵抗増大の要因となり、無視できない。この第４図
からチタンオキシナイトライド膜の抵抗率を１０−２Ω
ｃｍ程度以下にするには、スパッタガスの酸素の流量比
を６容量％以下にする必要がある。そして、第３図から
酸素の流量比を６８廿％にした場合チタンオキシナイト
ライド膜の酸素の含有率は７ａｔ％であることが解る。By the way, the higher the content of oxygen in the titanium oxynitride film, the greater the barrier effect, but on the other hand, the higher the oxygen content, the more the titanium oxynitride film becomes resistivity increases. FIG. 4 is a diagram showing the relationship between the flow rate ratio of oxygen 02 in the sputtering gas for forming a titanium oxynitride film and the resistivity of the titanium oxynitride film formed by sputtering. 1
The limit is 0-2 Ωcm, and if it is made larger than that, it becomes a cause of an increase in contact resistance, which cannot be ignored. From this figure 4, the resistivity of the titanium oxynitride film is 10-2Ω.
In order to reduce the amount to about cm or less, the flow rate ratio of oxygen in the sputtering gas needs to be 6% by volume or less. From FIG. 3, it can be seen that when the oxygen flow rate ratio is set to 68 %, the oxygen content of the titanium oxynitride film is 7 at %.
しかして、バリアメタルとしてのチタンオキシナイトラ
イド膜８は含有率が３〜７ａｔ％であれば良い。そして
、それをスパッタで形成する場合には、スパタガスの酸
素０２の流量比を４〜７容量％にすれば良いといえる。Therefore, it is sufficient that the titanium oxynitride film 8 as a barrier metal has a content of 3 to 7 at%. When forming it by sputtering, it is sufficient to set the flow rate ratio of oxygen 02 in the sputtering gas to 4 to 7% by volume.
第５図は本発明半導体装置の別の実施例を示すもので、
この半導体装置はコンタクトホール７か選択酸化膜３の
エツジに至るまで開いており、そして、１％のシリコン
を含有した第２層目のアルミニウム合金膜１２がスタッ
クされた構造である点で第１図に示した半導体装置と異
なっているが、それ以外の点では共通している。勿論、
第１層目のチタンオキシナイトライド膜９か３〜７ａｔ
％の酸素０を含有していることはいうまでもない。FIG. 5 shows another embodiment of the semiconductor device of the present invention.
This semiconductor device has a structure in which the contact hole 7 is open to the edge of the selective oxide film 3, and the second layer aluminum alloy film 12 containing 1% silicon is stacked. Although it is different from the semiconductor device shown in the figure, it is common in other respects. Of course,
First layer titanium oxynitride film 9 or 3 to 7at
Needless to say, it contains 0% oxygen.
（Ｈ，発明の効果）
以上に述べたように、本発明半導体装置によれば、バリ
アメタルの抵抗率を許容限度を超えないようにしつつバ
リア効果を必要な高さに高めることができる。(H. Effects of the Invention) As described above, according to the semiconductor device of the present invention, the barrier effect can be increased to a required level while preventing the resistivity of the barrier metal from exceeding the permissible limit.
符号の説明
１・・・シリコン半導体基板、
９・・・バリアメタル（チタンオキシナイトライド膜）
、
１０．１２−・・アルミニウム合金からなる電極。Explanation of symbols 1...Silicon semiconductor substrate, 9...Barrier metal (titanium oxynitride film)
, 10.12-- Electrode made of aluminum alloy.
第１図は本発明半導体装置の一つの実施例を示す断面図
、第２図はチタンオキシナイトライド膜を形成するスパ
ッタカスの酸素の流量比とリーク電流との関係図、第３
図はスパッタガスの酸素の流量比とチタンオキシナイト
ライド膜の酸素の含有率との関係図、第４図はスパッタ
ガスの酸素の流−贋比とチタンオキシナイトライドの抵
抗率との関係図、第５図は本発明半導体装置の別の実施
例を示す断面図である。
ズ／Ｙ、、、タガスの酸素の流量比とチタンオキシナイ
トライドの酸素の含有率の関イ示図４ ６ ８
ｔ。
ス／Ｙ、、、夕がスの０２流量比（容量％）Ｏ２流量比
とチタンナイトライド膜の
キ氏士ル率とｆ＞関係図FIG. 1 is a cross-sectional view showing one embodiment of the semiconductor device of the present invention, FIG. 2 is a relationship between the leakage current and the oxygen flow rate ratio of the sputtering residue forming the titanium oxynitride film, and FIG.
The figure shows the relationship between the oxygen flow ratio of the sputtering gas and the oxygen content of the titanium oxynitride film, and Figure 4 shows the relationship between the oxygen flow ratio of the sputtering gas and the resistivity of titanium oxynitride. , FIG. 5 is a sectional view showing another embodiment of the semiconductor device of the present invention. Figure 4 shows the relationship between the oxygen flow rate ratio of tagas and the oxygen content of titanium oxynitride.
t. 02 flow rate ratio (volume %) of evening gas, O2 flow rate ratio, titanium nitride film's power ratio and f > relationship diagram
Claims (1)
ルミニウム合金からなる電極との間にコンタクトをとる
ために介在せしめられたバリアメタルが、酸素の含有率
が３〜７ａｔ％のチタンオキシナイトライドＴｉＯＮか
らなることを特徴とする半導体装置(1) The barrier metal interposed to establish contact between the silicon semiconductor substrate and the electrode made of aluminum or aluminum alloy is made of titanium oxynitride TiON with an oxygen content of 3 to 7 at%. A semiconductor device characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219784A JP2893686B2 (en) | 1988-09-02 | 1988-09-02 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219784A JP2893686B2 (en) | 1988-09-02 | 1988-09-02 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0267763A true JPH0267763A (en) | 1990-03-07 |
| JP2893686B2 JP2893686B2 (en) | 1999-05-24 |
Family
ID=16740955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63219784A Expired - Lifetime JP2893686B2 (en) | 1988-09-02 | 1988-09-02 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2893686B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243579A (en) * | 1992-02-28 | 1993-09-21 | Canon Inc | Semiconductor device |
| US5561326A (en) * | 1992-01-08 | 1996-10-01 | Mitsubishi Denki Kabushiki Kaisha | Large scale integrated circuit device |
| US6893905B2 (en) | 1997-07-15 | 2005-05-17 | Micron Technology, Inc. | Method of forming substantially hillock-free aluminum-containing components |
| US7161211B2 (en) | 1997-07-15 | 2007-01-09 | Micron Technology, Inc. | Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition |
| WO2007004378A1 (en) * | 2005-06-30 | 2007-01-11 | Sharp Kabushiki Kaisha | Nitride semiconductor laser element and nitride semiconductor laser device |
-
1988
- 1988-09-02 JP JP63219784A patent/JP2893686B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| APPL PHYS LETT=1985US * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5561326A (en) * | 1992-01-08 | 1996-10-01 | Mitsubishi Denki Kabushiki Kaisha | Large scale integrated circuit device |
| JPH05243579A (en) * | 1992-02-28 | 1993-09-21 | Canon Inc | Semiconductor device |
| US6893905B2 (en) | 1997-07-15 | 2005-05-17 | Micron Technology, Inc. | Method of forming substantially hillock-free aluminum-containing components |
| US7161211B2 (en) | 1997-07-15 | 2007-01-09 | Micron Technology, Inc. | Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition |
| WO2007004378A1 (en) * | 2005-06-30 | 2007-01-11 | Sharp Kabushiki Kaisha | Nitride semiconductor laser element and nitride semiconductor laser device |
| US7804880B2 (en) | 2005-06-30 | 2010-09-28 | Sharp Kabushiki Kaisha | Nitride semiconductor laser device and nitride semiconductor laser apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2893686B2 (en) | 1999-05-24 |
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