JPH0265129A - Microwave plasma treatment device - Google Patents
Microwave plasma treatment deviceInfo
- Publication number
- JPH0265129A JPH0265129A JP21500788A JP21500788A JPH0265129A JP H0265129 A JPH0265129 A JP H0265129A JP 21500788 A JP21500788 A JP 21500788A JP 21500788 A JP21500788 A JP 21500788A JP H0265129 A JPH0265129 A JP H0265129A
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical member
- discharge tube
- wave guide
- guide tube
- microwave plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009832 plasma treatment Methods 0.000 title abstract description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、マイクロ波プラズマ処理装置に係り、特に放
電管を有するマイクロ波プラズマ処理装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a microwave plasma processing apparatus, and particularly to a microwave plasma processing apparatus having a discharge tube.
放電管を有するマイクロ波プラズマ処理装置としては、
例えば、特開昭６１−１３６２５号公報に記載のような
ものが知られている。As a microwave plasma processing device with a discharge tube,
For example, the one described in Japanese Unexamined Patent Publication No. 61-13625 is known.
上記従来技術で、放電管は、一体構造のものが使用され
ており、放電管の価格が高（なり装置価格が増大すると
いった問題がある。In the above-mentioned conventional technology, the discharge tube used has a one-piece structure, and there is a problem that the price of the discharge tube is high (which increases the cost of the device).
また、放電管は、使用により消耗される、つまり、交換
を要するものであり、放電管高価によるメンテナンス費
が増大するといった問題がある。Further, the discharge tube is worn out through use, that is, it must be replaced, and there is a problem that maintenance costs increase due to the high price of the discharge tube.
さらに、放電管の使用による消耗は部分的であるが、こ
のような部分的な消耗によっても放電管全体を交換する
必要があり、メンテナンス費が一＆）増大するといった
問題がある。Furthermore, although the discharge tube is only partially worn out due to use, such partial wear requires replacing the entire discharge tube, which raises the problem of an increase in maintenance costs.
本発明の目的は、装置価格の増大およびメンテナンス費
の増大を抑制できるマイクロ波プラズマ処理装置を提供
することにある。An object of the present invention is to provide a microwave plasma processing apparatus that can suppress increases in apparatus price and maintenance costs.
上記目的は、放電管と、該放電管内に磁場を生成する手
段と、財記数電管内にマイクロ波電界を生成する手段と
を有するマイクロ波プラズマ処理装置において、ｌ１ｆ
ｆ記放１！管を筒状部材と該筒状部材の蓋部材とで分割
構成したことにより、達成される。The above object provides a microwave plasma processing apparatus having a discharge tube, a means for generating a magnetic field in the discharge tube, and a means for generating a microwave electric field in the tube.
f record release 1! This is achieved by dividing the tube into a cylindrical member and a lid member for the cylindrical member.
放電管は、筒状部材と該筒状部材の蓋部材とで分割構成
される。The discharge tube is divided into a cylindrical member and a lid member for the cylindrical member.
このように、放電管を分割構造とした場合、従来の一体
構造のものに比べ、製作が容易なため、放電管価格が安
価となる。また、これにより、メンテナンス費の増大を
抑制できる。さらに、各部材の内で、消耗されている部
材のみを交換すれば良く、全体を交換する必要がなくな
るため、メンテナンス費の増大を一層抑制できる。In this way, when the discharge tube has a divided structure, it is easier to manufacture than the conventional one-piece structure, and therefore the price of the discharge tube is lower. Moreover, this makes it possible to suppress an increase in maintenance costs. Furthermore, among the members, only the worn members need be replaced, and there is no need to replace the entire member, so that an increase in maintenance costs can be further suppressed.
以下、本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図で、放電管１０の外側には、導波清濁が略同心状
に設けられている。導波清濁のマイクロ波導入口には、
導波管２１が連結されている。導波管２１には、マイク
ロ波発振手段であるマグネトロン（９）が設けられてい
る。導波管加の外側には、磁場生成手段であるコイル伯
が３ｊｌ装されている。In FIG. 1, waveguides are provided approximately concentrically on the outside of the discharge tube 10. At the microwave inlet of the guided wave clearing,
A waveguide 21 is connected. The waveguide 21 is provided with a magnetron (9) which is a microwave oscillation means. On the outside of the waveguide, 3 coils, which are magnetic field generating means, are installed.
放電管ｌＯは、筒状部材１１と該筒状部材１１の蓋部材
化とで分割構成されている。筒状部材１１は、例えば、
同筒形状であり、蓋部材しは、円板形である。筒状部材
１１と蓋部材１２は、石英等の実見絶縁材料で形成され
ている。The discharge tube IO is divided into a cylindrical member 11 and a lid member of the cylindrical member 11. The cylindrical member 11 is, for example,
It has the same cylindrical shape, and the lid member has a disc shape. The cylindrical member 11 and the lid member 12 are made of a practical insulating material such as quartz.
この場合、筒状部材１１の底部は、容器間の開口５１を
有する頂壁に開口５１を介して容器閣内と連通して気密
に設けられている。蓋部材１２は、筒状部材１１の頂部
に気密に脱着可能に設けられている。In this case, the bottom of the cylindrical member 11 is airtightly provided in a top wall having an opening 51 between the containers so as to communicate with the inside of the container cabinet via the opening 51. The lid member 12 is provided on the top of the cylindrical member 11 so as to be airtightly removable.
容器閣内および容器閣内と関口５１を介して連通する放
電管１０内は、真空排気装置ｄ６ｏにより減圧排気され
る。また、放電管１０内には、処理ガスが導入される。The interior of the container cabinet and the interior of the discharge tube 10, which communicates with the interior of the container cabinet via the entrance 51, is evacuated to a reduced pressure by a vacuum evacuation device d6o. Furthermore, a processing gas is introduced into the discharge tube 10 .
第１図で、この場合、筒状部材１１は加熱可能になって
いる。つまり、筒状部材１１の、この場合、外面には、
加熱ヒータ７０が設けられている。In FIG. 1, the cylindrical member 11 is now heatable. That is, in this case, on the outer surface of the cylindrical member 11,
A heater 70 is provided.
なお、第１図で、（資）は、プラズマ処理される試料、
例えば、半導体素子基板（資）を保持する試料台、１０
０は、試料台間に接続された高周波電源である。In Fig. 1, (capital) indicates the sample to be plasma treated,
For example, a sample stage holding a semiconductor element substrate (material), 10
0 is a high frequency power supply connected between the sample stands.
第１図で、試料９０のプラズマ処理経時により、例えば
、筒状部材１１が消耗した場合、筒状部材１１は、蓋部
材化と共に取り外される。その後、筒状部材１１と蓋部
材１２とは分離され、分離された蓋部材化は、新たな筒
状部材１１に気密に脱着可能に設けられる。その後、こ
のような放゛屯管１０は、容器間に気密に再構設される
。In FIG. 1, for example, when the cylindrical member 11 is worn out due to the plasma treatment of the sample 90 over time, the cylindrical member 11 is removed together with the lid. Thereafter, the cylindrical member 11 and the lid member 12 are separated, and the separated lid member is attached to a new cylindrical member 11 in an airtight manner so as to be removable. Thereafter, such a discharge tube 10 is reconfigured airtightly between the containers.
また、第１図で、試料（３）のプラズマ処理経時により
筒状部材１１の内面に反応生成物が付着、堆積した場合
、加熱ヒータ７０により筒状部材１１は加熱される。該
加熱により筒状部材１１の内面に付着。Further, in FIG. 1, when reaction products adhere to and accumulate on the inner surface of the cylindrical member 11 due to the plasma treatment of the sample (3) over time, the cylindrical member 11 is heated by the heater 70. Due to the heating, it adheres to the inner surface of the cylindrical member 11.
堆積した反応生成物は、昇華除去され、筒状部材１１の
内面は清掃される。また、この他に、筒状部材１１を加
熱ヒータ７０により反応生成物が付着しないような温度
に制御することもできる。The deposited reaction products are sublimated and removed, and the inner surface of the cylindrical member 11 is cleaned. In addition to this, the temperature of the cylindrical member 11 can also be controlled by the heater 70 to a temperature that prevents reaction products from adhering.
本実施例では、次のような効果が得られる。In this embodiment, the following effects can be obtained.
（１） 放電管は、一体構造ではな（、筒状部材と唇
状部材との分割構造であるため、その製作が容易であり
価格も安価にできる。(1) The discharge tube does not have an integral structure (it has a divided structure of a cylindrical member and a lip-like member, so it is easy to manufacture and can be inexpensive).
（２） 放電管が安価になるので、メンテナンス費の
増大をその分抑制できる。(2) Since the discharge tube becomes cheaper, an increase in maintenance costs can be suppressed accordingly.
（３）放′１１！管の消耗した部材だけを交換できるの
で、メンテナンス費の増大をより一層抑制できる。(3) Release '11! Since only the worn parts of the pipe can be replaced, increases in maintenance costs can be further suppressed.
（４）放電管の筒状部材を加熱クリーニングできるので
、マイクロ波プラズマ処理装置における低ＸＡ塵化な達
成できる。(4) Since the cylindrical member of the discharge tube can be heated and cleaned, low XA dust can be achieved in the microwave plasma processing apparatus.
（５）放電管の筒状部材を反応生成物が付着、堆積しな
いように加熱できるので、放電管全体のクリーニング周
期を延ばすことができ、この点でのメンテナンス性を簡
素化、向上できる。(5) Since the cylindrical member of the discharge tube can be heated so that reaction products do not adhere or accumulate, the cleaning cycle of the entire discharge tube can be extended, and maintenance efficiency in this respect can be simplified and improved.
本発明によれば、放電管の価格、構造に起因する装置価
格の増大およびメンテナンス費の増大を抑制できる効果
がある。According to the present invention, it is possible to suppress an increase in device price and maintenance cost due to the price and structure of the discharge tube.
第１図は、本発明の一実施例のマイクロ波プラズマ処理
装置の要部縦断面図である。FIG. 1 is a longitudinal sectional view of a main part of a microwave plasma processing apparatus according to an embodiment of the present invention.
Claims (1)
記放電管内にマイクロ波電界を生成する手段とを有する
マイクロ波プラズマ処理装置において、前記放電管を筒
状部材と該筒状部材の蓋部材とで分割構成したことを特
徴とするマイクロ波プラズマ処理装置。1. In a microwave plasma processing apparatus having a discharge tube, means for generating a magnetic field within the discharge tube, and means for generating a microwave electric field within the discharge tube, the discharge tube is connected to a cylindrical member and the cylindrical member. A microwave plasma processing apparatus characterized in that it is divided into a lid member and a lid member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21500788A JPH0265129A (en) | 1988-08-31 | 1988-08-31 | Microwave plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21500788A JPH0265129A (en) | 1988-08-31 | 1988-08-31 | Microwave plasma treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0265129A true JPH0265129A (en) | 1990-03-05 |
Family
ID=16665167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21500788A Pending JPH0265129A (en) | 1988-08-31 | 1988-08-31 | Microwave plasma treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0265129A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472724A (en) * | 1990-07-13 | 1992-03-06 | Sony Corp | Dryetching process |
| US5785807A (en) * | 1990-09-26 | 1998-07-28 | Hitachi, Ltd. | Microwave plasma processing method and apparatus |
| JP2004241628A (en) * | 2003-02-06 | 2004-08-26 | Hitachi High-Technologies Corp | Method of controlling semiconductor treatment device |
-
1988
- 1988-08-31 JP JP21500788A patent/JPH0265129A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472724A (en) * | 1990-07-13 | 1992-03-06 | Sony Corp | Dryetching process |
| US5785807A (en) * | 1990-09-26 | 1998-07-28 | Hitachi, Ltd. | Microwave plasma processing method and apparatus |
| US5914051A (en) * | 1990-09-26 | 1999-06-22 | Hitachi, Ltd. | Microwave plasma processing method and apparatus |
| JP2004241628A (en) * | 2003-02-06 | 2004-08-26 | Hitachi High-Technologies Corp | Method of controlling semiconductor treatment device |
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