JPS63253629A - Plasma treatment apparatus - Google Patents

Abstract

PURPOSE:To reduce the deposition amount of a reaction product adhering to the inner surface of the sidewall of the reaction chamber at the time of a plasma treatment and to shorten the plasma cleaning time by surrounding the outer periphery of the quartz glass constituting the sidewall of the reaction chamber with a surrounding wall, and placing a heating device in the space between the quartz glass and the surrounding wall. CONSTITUTION:An electrode 3 provided within a chamber 1, a reaction chamber, through an insulator 2 is grounded, a high-frequency power supply 5 is connected to an electrode 4, and after a reactive gas is introduced into the reaction chamber, a plasma is generated to perform an etching. The reaction chamber in the vicinity of the outer periphery of the parts opposed to the electrodes 3, 4 consists of a sidewall 6 made of quartz, around which a sheath heater 7 whose temperature is cotrollable is provided, whereby the quartz sidewall 6 can be heated. Further, a surrounding wall 9 made of a conductive material is provided in the outer periphery of the quartz sidewall 6 and the sheath heater 7, thereby preventing an electromagnetic wave from leaking from the inside of the reaction chamber to the outside thereof. Also, since the heating temperature of the quartz sidewall 6 may differ between the times of etching and plasma cleaning, a gas introducing port 10 and a discharge port 11 can be provided to cause a cooling gas to flow, thereby to cool the heated quartz sidewall 6.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a plasma processing apparatus, and particularly to a plasma processing apparatus suitable for reducing the adhesion of reaction products generated during plasma processing to the inner wall of a reaction chamber. It is.

[Conventional technology]

In conventional devices, a heating mechanism is disposed within the chamber wall itself, as described in Japanese Patent Publication No. 60-56431.

[Problem that the invention seeks to solve]

The above-mentioned prior art does not take into account the manufacturing difficulties of providing a heating mechanism inside the chamber wall itself, resulting in a problem of complicated manufacturing.

An object of the present invention is to provide a plasma processing apparatus that can easily heat the inner wall of a reaction chamber, reduce the adhesion of reaction products generated during plasma processing, and shorten the cleaning time for plasma cleaning.

[Means for solving problems]

The above object is achieved by constructing the side wall of the reaction chamber with quartz glass, surrounding the outer periphery of the quartz glass with a surrounding wall, and installing a heating device in the space between the quartz glass and the surrounding wall.

[For production]

By heating the quartz glass with a heating device installed in the space between the quartz glass and the surrounding wall, the amount of reaction products deposited on the inner surface of the side wall of the reaction chamber during plasma processing is reduced, and the plasma cleaning is further improved. Cleaning time is reduced.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

In this case, FIG. 1 shows an etching apparatus having parallel plate electrodes. Electrodes 3 and 4 are placed in a chamber 1 constituting a reaction chamber with an insulator 2 in between. The electrode 3 is grounded, and the other electrode 4 is connected to a high frequency power source 5. After a reactive gas is introduced into the reaction chamber by a gas supply device (not shown), plasma is generated and etching is performed.

The reaction chamber near the outer periphery of the opposing portion of the electrodes 3 and 4 has a quartz side wall 6 made of quartz glass, and a sheath heater 7, which is a heating means capable of temperature control, is provided around the quartz side wall 6 so that the quartz side wall 6 can be heated. There is. This reduces the amount of reaction products generated during etching that accumulate on the quartz side wall 6, and also increases the cleaning speed during plasma cleaning because the deposits are heated through the quartz side wall 6.

The reaction chamber is composed of a chamber 1 and a quartz side wall 6 attached to the chamber 1 via a ring. Further, a surrounding wall 9 made of a conductive material is provided around the outer periphery of the quartz side wall 6 and the sheath heater 7 to prevent electromagnetic waves from leaking from one reaction chamber to the outside through the quartz side wall 6.

In addition, since the set temperature for heating the quartz side wall 6 may be different during etching and plasma cleaning, a gas inlet 10 and a gas outlet 11 are provided in the surrounding wall 9, and the quartz side wall 6 and surrounding wall 9 are heated at different temperatures. The quartz side wall 6 is heated by flowing cooling gas by a gas supply means (not shown) into the space between the
This allows for cooling.

According to this embodiment, the quartz side wall 6 can be easily heated, the amount of reaction products generated during etching deposited on the quartz side wall 6 can be reduced, and the cleaning speed can also be increased in plasma cleaning. It has the effect of being able to.

Next, a second embodiment will be explained with reference to FIG.

In the embodiment shown in FIG. 1, the quartz side wall 6 is heated by a sheath heater 7, but in the embodiment shown in FIG. According to the second embodiment, in addition to the effects of the previous embodiment, the electrodes are heated by the transmitted light transmitted through the quartz side wall 6. Since it can be heated by 3°4, etc., it has the effect of further increasing the cleaning speed during plasma cleaning.

Although this embodiment has been described with respect to an etching apparatus, it is also applicable to a CVD apparatus using plasma.

〔Effect of the invention〕

According to the present invention, since the walls of the reaction chamber can be easily heated,
This has the effect of reducing the amount of reaction products deposited during etching and shortening the cleaning time during plasma cleaning.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view showing a plasma processing apparatus according to an embodiment of the invention, and FIG. 2 is a longitudinal sectional view showing a plasma processing apparatus according to a second embodiment of the invention. 1------Chamber, 3, 4---One electrode, 5---One high frequency power supply, 6---M-Quartz side wall, 7---Sheath heater, Enclosing wall to 9------m, 10------Gas inlet, 11------Gas outlet, origami 6---Ey Hide 1 (t1 wall 1l-=-- Gas ηF outlet 12 Figure β-11 medical radiation plate

Claims (1)

[Scope of Claims] 1. In a plasma processing apparatus comprising a reaction chamber, a vacuum evacuation device, a gas supply device, and a plasma generation device, the side wall of the reaction chamber is made of quartz glass, and the outer periphery of the quartz glass is surrounded by a surrounding wall. . A plasma processing apparatus, characterized in that a heating means is installed in a space between the quartz glass and the surrounding wall. 2. The plasma processing apparatus according to claim 1, wherein the heating means is an infrared lamp or a resistance heating device such as a sheath heater. 3. The plasma processing apparatus according to claim 1, further comprising a gas supply means capable of supplying gas to the space between the quartz glass and the surrounding wall.