JPH08325737A - Vacuum treating device - Google Patents

Abstract

PURPOSE: To solve the problem due to the release of a thin film depositing on the inner face of a vacuum vessel and to conduct good-quality treatment. CONSTITUTION: The entire inner face of a vacuum vessel 1 is covered with the deposition preventive shields 5 and 50 each formed with a plate member consisting of porous material. The material suspending in the vessel 1 is collected in the holes of the shields 5 and 50 and not deposited on the inner face of the vessel 1. The suspended material entrained by a gas current is collected by the gas-permeable shields 5 and 50, and further the deposited thin film is not cracked since the thin film has the flexibility and is deformed to relax the internal stress. The shield 5 is changeably provided, and a specified shield bias voltage is applied by an applying mechanism 53.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus for applying a predetermined processing to an object by utilizing a vacuum, and particularly to depositing a thin film on the inner surface of a vacuum container such as a plasma vapor phase growth apparatus. There is a vacuum processing apparatus.

[0002]

2. Description of the Related Art Various apparatuses such as a vacuum vapor deposition apparatus and a sputtering apparatus are known as apparatuses for performing processing by utilizing vacuum. Among these, when manufacturing a large scale integrated circuit (LSI), a liquid crystal display (LCD), etc., a plasma vapor phase growth apparatus, a plasma etching apparatus, etc. are often used. FIG. 5 shows a schematic configuration of a plasma vapor deposition apparatus as an example of such a conventional vacuum processing apparatus.

The vacuum processing apparatus shown in FIG. 5 includes a vacuum container 1 having an exhaust system 11, a gas introducing mechanism 2 for introducing a predetermined gas into the vacuum container 1, and a plasma by applying energy to the introduced gas. Power supply mechanism 3 for forming a substrate, and a substrate holder 4 for mounting a substrate 40 as an object.
It is mainly composed of. In the apparatus of FIG. 5, the substrate 40 is loaded into the vacuum container 1 through a gate valve (not shown) and placed on the substrate holder 4. After exhausting the inside of the vacuum container 1 by the exhaust system 11, a predetermined gas is introduced by the gas introduction mechanism. Next, energy such as high frequency power is applied to the gas in the vacuum container 1 by the power supply mechanism 3,
A plasma is formed. Then, a predetermined thin film is deposited on the surface of the substrate by the gas phase reaction generated by the plasma.
For example, when silane gas and oxygen gas are introduced by the gas introduction mechanism 2, a decomposition reaction or the like is caused by plasma, and a thin film of silicon oxide is formed on the surface of the substrate.

[0004]

In the above vacuum processing apparatus, a thin film may be deposited on the inner surface of the vacuum container as the vacuum processing is continued. This thin film deposition is caused by particles floating inside the vacuum container adhering to the inner surface of the container. That is, floating particles adhere and stay for a considerable time,
A thin film grows when the deposition and retention reaches a considerable amount and time. When the thickness of the thin film deposited on the inner surface of the container reaches a certain level, the thin film peels off due to internal stress inside the thin film. The peeled thin film becomes dust inside the vacuum container, which impairs the quality of vacuum processing. For example, L
In an apparatus that performs processing for forming a circuit, such as the SI process, the circuit may be broken or short-circuited by dust, which may lead to a fatal product defect. The invention of the present application has been made in order to solve the above problems, and an object thereof is to solve the problem caused by peeling of the thin film deposited on the inner surface of the vacuum container and to enable high-quality vacuum processing.

[0005]

In order to achieve the above object, the invention according to claim 1 of the present application comprises a vacuum container and an exhaust system for exhausting the inside of the vacuum container. In a vacuum processing apparatus that places an object at a position and performs a predetermined process, in order to prevent a material floating in the vacuum container from adhering to the inner surface of the vacuum container and prevent a thin film from being deposited on the inner surface. The deposition shield is provided so as to cover the inner surface, and the deposition shield is formed of a plate-shaped member made of a porous material and having a predetermined thickness. Similarly, in order to achieve the above object, in the invention according to claim 2, in the structure according to claim 1, the deposition shield is provided so as to cover the entire inner surface of the vacuum container except the opening portion. Similarly, in order to achieve the above object, in the invention according to claim 3, in the structure according to claim 1 or 2, the deposition shield is formed to have air permeability, and a gas flow in the vacuum container. The gas is arranged so that it can flow through the deposition shield when it is generated. Similarly, in order to achieve the above object, the invention according to claim 4 is the structure according to claim 1, 2 or 3, wherein the deposition shield allows deformation of the thin film deposited in the hole portion due to internal stress. It has at least flexibility. Similarly, in order to achieve the above object, in the invention according to claim 5, in the structure of claim 1, 2, 3 or 4, the deposition shield is replaceably provided. Similarly, in order to achieve the above object, the invention of claim 6 is the structure of claim 1, 2, 3, 4 or 5, wherein a gas introducing mechanism for introducing a predetermined gas into the vacuum container is introduced. And a power supply mechanism for forming plasma by applying energy to the gas, and is configured to be able to perform a predetermined process on an object using the formed plasma. Similarly, in order to achieve the above object, the invention according to claim 7 is the structure according to claim 1, 2, 3, 4, 5 or 6, wherein the gas introduction mechanism performs plasma etching on the thin film deposited on the deposition shield. The gas that can be removed by the above is introduced into the vacuum container. Similarly, in order to achieve the above object, the invention according to claim 8 is the shield bias voltage for applying the shield bias voltage to the deposition shield in the structure according to claim 1, 2, 3, 4, 5, 6 or 7. An application mechanism is provided.

[0006]

EXAMPLES Examples of the present invention will be described below. FIG.
FIG. 1 is a schematic diagram of a vacuum processing apparatus according to an embodiment of the present invention.
The vacuum device shown in FIG. 1 is similar to the device shown in FIG.
A vacuum container 1, a gas introduction mechanism 2 for introducing a predetermined gas into the vacuum container 1, and a power supply mechanism 3 for applying energy to the introduced gas to form plasma.
It has a substrate holder 4 for mounting a substrate for forming a thin film. The apparatus of this embodiment has the deposition shield 5 for preventing the material floating in the vacuum container from adhering to the inner surface of the vacuum container and preventing the thin film from being deposited on the inner surface. .

First, the vacuum container 1 comprises a film forming chamber 101 and a vacuum exhaust chamber 102 located below the film forming chamber 101 and having a slightly larger space. Then, the portion forming the film forming chamber 101 and the portion forming the vacuum exhaust chamber 102 are configured to be separable. This is for replacing the deposition shield 5 described later. Further, a gate valve (not shown) is provided on the wall of the vacuum chamber 1 in the film forming chamber 101, and an exhaust pipe 13 connected to the exhaust system 11 is provided on the wall of the vacuum exhaust chamber 102. There is. The exhaust system 11 includes a roughing pump 111, a main pump 112 arranged in front of the roughing pump 111, a main valve 113 and a variable leak valve 114 arranged on an exhaust path through which the pumps 111, 112 exhaust gas. It is mainly composed of and.

The vacuum container 1 has a bell jar 12 on the upper side.
have. A circular opening is provided in the center of the upper vessel wall of the vacuum container 1, and the bell jar 12 is hermetically connected to this opening. The bell jar 12 has a cylindrical shape with a diameter of about 100 mm having a hemispherical end and an opening at the lower end, and is made of a dielectric material such as quartz glass. The vacuum container 1 has a circular opening in the center of the upper wall, and the bell jar 12 is connected to this opening in an airtight manner.
Is arranged.

In the example shown in FIG. 1, the gas introduction mechanism 2 is composed of two gas introduction systems 21 and 22 so that two different gases can be introduced simultaneously. Each of the gas introduction systems 21 and 22 is mainly composed of pipes 211 and 221 connected to a tank (not shown) and gas introduction bodies 212 and 222 connected to the ends of the pipes 211 and 221. FIG. 2 is a diagram illustrating the configuration of the gas introduction body. As shown in FIG. 2, the gas introduction bodies 212, 222
Is composed of an annular pipe having a circular cross section. The gas introduction bodies 212 and 222 are supported by a support rod 23 provided in the vacuum container 1, and are horizontally arranged along the inner surface of the vacuum container 1. The vacuum container 1 may have a cylindrical shape or a rectangular tube shape.

A transport pipe 24 is provided so as to penetrate the wall of the vacuum container 1 in an airtight manner, and one end of the transport pipe 24 is connected to the gas introduction bodies 212 and 222. The other ends of the gas introduction bodies 212 and 222 are the pipes 211 and 22 of FIG.
Connected to 1. Then, the gas introduction bodies 212, 22
As shown in FIG. 2, 2 has a gas outlet 25 on its inner surface. The gas outlet 25 is an opening having a diameter of about 0.5 mm and is provided on the circumference with an interval of about 25 mm.

On the other hand, returning to FIG. 1, the power supply mechanism 3 includes a high-frequency coil 31 arranged around the bell jar 12, and a high-frequency power supply 33 for supplying high-frequency power to the high-frequency coil 31 via a matching unit 32. It is mainly composed of and. For the high frequency power supply 33, for example, 13.56 MH
A device for generating high frequency power of z is adopted, and the high frequency power is supplied from the high frequency coil 31 into the bell jar 12.

A substrate holder 4 is provided below the bell jar 12 in the vacuum container 1. The substrate holder 4 mounts a substrate 40 for forming a thin film on the upper surface thereof, and has a built-in temperature adjusting mechanism 41 for heating or cooling the substrate 40 as necessary. The substrate holder 4 is provided with a substrate bias voltage applying mechanism 42 for applying a predetermined substrate bias voltage to the substrate 40 by the interaction between generated plasma and high frequency.
The substrate bias voltage applying mechanism 42 includes a substrate matching box 421.
And a substrate high-frequency power source 422 that generates a predetermined high-frequency power applied via the substrate matching device 421. The “bias voltage due to interaction between plasma and high frequency” requires that a considerable capacitance exists between the high frequency power supplies 33 and 422 and the plasma. Therefore, when the substrate holder 4 and the substrate 40 are all made of metal, a predetermined capacitor is arranged on the power supply line to the substrate holder 4.

Next, the deposition shields 5 and 50, which are one of the major features of the apparatus of this embodiment, will be described. FIG.
[Fig. 4] is a perspective view for explaining the appearance of the deposition shield. FIG.
Also, as shown in FIG. 3, the deposition shields 5 and 50 are formed by plate-shaped members made of a porous material. As shown in FIG. 1, in this embodiment, a deposition shield 5 that covers the inner surface of the portion between the bell jar 12 and the substrate holder 4 and an auxiliary deposition shield 50 that covers the inner surface of the other portions are arranged. . The plate-shaped members forming the deposition shields 5 and 50 are, for example, ENERGY RESEARCH AND
GENERATION, Inc. DUOCEL made by the company
It is molded with a porous material such as
It is a degree.

The deposition shield 5 is formed of such a porous material into a substantially cylindrical shape by rolling a plate member.
As shown in FIG. 1, the substantially cylindrical deposition shield 5 has a shape in which the inner diameter gradually decreases as it goes upward. The curvature of the rounded portion of the upper half of the deposition shield 5 is configured to form a substantially spherical surface with respect to the center point of the substrate 40 on the substrate holder 4. Further, the deposition shield 5 does not have the substantially cylindrical shape with only one plate-shaped member, but has the substantially cylindrical shape by arranging a plurality of members circumferentially.

The deposition shield 5 is arranged so as to be replaceable by two first and second shield supports 51 and 52. First, the first shield support body 51 is an annular member like a band plate formed in a circumferential shape. The first shield support body 51 is arranged so that the edge of the plate is fixed to the upper wall portion of the vacuum container. Then, as shown in FIG. 1, the first shield support 51 is bent outward from the middle, and the bent portion supports the tip of the deposition shield 5.

The second shield support 52 is also an annular member having a band plate formed in a circumferential shape. The second shield support body 52 is arranged so that the edge portion of the plate is fixed to the side wall portion of the vacuum container 1. As shown in FIG. 1, the second shield support body 52 is bent obliquely upward from the middle, and the bent portion (hereinafter referred to as the tip) supports the deposition shield 5. It should be noted that the tip portion does not form a complete ring, but is divided into a plurality of arcs each having a predetermined distance and provided in plural.

A hinge (not shown) is provided at the tip of the second shield support 52 so that it can be opened and closed as shown in FIG. When removing the deposition shield 5 for replacement, the upper portion of the vacuum vessel 1 is lifted and separated from the lower portion, and then the tip of the second shield support 52 is moved as shown by the dotted line in FIG. Open and take out the deposition shield 5. Also, when installing a new deposition shield 5,
With the second shield support 52 open, the deposition shield 5 is arranged as shown in FIG. 1, and then the tip is closed and fixed so that the tip does not move.

The deposition shield 5 is provided with a shield bias voltage applying mechanism 53. The shield bias voltage applying mechanism 53 of the present embodiment is used for the shield matching device 5.
31 and a shield high-frequency power source 532 that generates a predetermined high-frequency power to be applied to the deposition shield 5 via the shield matching unit 531. That is, the shield bias voltage applying mechanism 53 of the present embodiment employs a mechanism for generating the above-mentioned “bias voltage due to interaction between plasma and high frequency waves” similarly to the substrate bias voltage applying mechanism 42.

If the deposition shield 5 is made of a dielectric material and the deposition shield 5 is thick, it becomes difficult to apply a bias voltage at a high frequency. From that point, for example, when the deposition shield 5 is made of alumina, the thickness is preferably about 3 mm or less. The power supply line from the shield matching box 531 is connected to the first and second shield supports 51 and 52. That is, the first and second shield supports 51, 52 are arranged so as to penetrate the chamber wall of the vacuum container 1 with the insulating material 54 interposed therebetween. The power supply line is connected.

Further, the auxiliary deposition shield 50 is arranged so as to cover the inner surface of the container other than the portion covered by the deposition shield 5 as shown in FIG. This auxiliary protective shield 5
0 is formed of a flat plate-shaped member, unlike the deposition shield 5. The auxiliary deposition shield 50 may be configured and replaced in the same manner as the case of the deposition shield 5. However, since the adhesion of the floating material to the auxiliary deposition shield 50 is relatively small, it is not necessary to make it replaceable. The deposition shield 5 and the auxiliary deposition shield 50 cover the entire inner surface of the vacuum container 1 except the opening.

Next, the operation of the vacuum processing apparatus of this embodiment having the above structure will be described. First, the substrate 40 is loaded into the vacuum container 1 through a gate valve (not shown) provided in the vacuum container 1 and placed on the substrate holder 4. The gate valve is closed and the exhaust system 11 is operated to exhaust the inside of the vacuum container 1 to, for example, about 5 mTorr. Next, the gas introduction mechanism 2 is operated to introduce a predetermined gas into the vacuum container 1 at a predetermined flow rate. At this time, the gas is pipes 211 and 221.
Is supplied to the gas introduction bodies 212 and 222 from the gas introduction body 212, 222 through the transportation pipe 24, and is introduced into the vacuum container 1 so as to be blown inward from the gas blowing ports 25 of the gas introduction bodies 212 and 222. The introduced gas diffuses in the vacuum container 1 and reaches the bell jar 12.

In this state, the power supply mechanism 3 is operated to
High-frequency coil 3 from high-frequency power supply 33 through matching device 32
1 is applied with high frequency power of 13.56 MHz 2500 W. At the same time, the substrate bias voltage applying mechanism 42 and the shield bias voltage applying mechanism 53 also operate to apply predetermined bias voltages to the substrate 40 and the deposition shield 5, respectively. The high frequency power supplied by the power supply mechanism 3 is introduced into the bell jar 12 via the high frequency coil 31, and gives energy to the gas present in the bell jar 12 to generate plasma. The generated plasma diffuses from the bell jar 12 toward the lower substrate 40. A predetermined product is generated in the plasma, and when the product reaches the substrate 40, a predetermined process is performed.

For example, when performing a plasma vapor deposition process for forming a silicon oxide thin film, monosilane gas is introduced by the first gas introduction system 21 and oxygen gas is introduced by the second gas introduction system 22. The monosilane / oxygen plasma decomposes the monosilane and reacts with oxygen to form a silicon oxide thin film. At this time, the substrate bias voltage applied by the substrate bias voltage applying mechanism 42 causes the ions in the plasma to collide with the surface of the substrate 40 on the surface of the substrate 40. The energy given by this ion bombardment enables efficient thin film formation.

In the vacuum processing apparatus of the present embodiment, which operates as described above, the deposition shields 5 and 50 collect the floating material and suppress the generation of dust.
This point will be described in more detail with reference to FIG. FIG.
It is a cross-sectional schematic diagram explaining the effect of a deposition shield.
First, some floating material exists inside the vacuum container 1. For example, the material generated in plasma floats in the apparatus for performing the plasma vapor deposition as described above, and the etched material floats in the vacuum container 1 in the apparatus for performing the plasma etching. When such a floating material adheres to the inner surface of the vacuum container 1, a thin film may be deposited on the inner surface of the conventional apparatus as described above.

However, in the apparatus of this embodiment, as shown in FIG.
As shown in (a), the deposition shields 5 and 50 are vacuum containers 1.
Since it covers the inner surface of the
50 and not on the inner surface of the container. Therefore, the thin film is prevented from being deposited on the inner surface of the container. At this time, since the deposition shields 5 and 50 of the present embodiment are formed of the porous material as described above, the floating material is collected in the holes, and the deposition effect is further improved. (Fig. 4 (b)). Then, even if the collection of the floating material progresses and grows into a thin film, the thin film will not adhere to the deposition shields 5, 50.
Since it is deposited inside the complicated hole, it is not easily peeled off, and it is possible to prevent generation of dust due to peeling of the thin film for a long time (FIG. 4C).

Furthermore, in this embodiment, as shown in FIGS. 1, 3 and 4, the deposition shields 5 and 50 are the vacuum vessel 1.
Is located at a position away from. In this case, if the pores of the porous material are not mere recesses but penetrate at least partially, the deposition shields 5 and 50 have air permeability, and the flow of gas existing in the vacuum container 1 is It will easily pass through the deposition shields 5 and 50. For this reason, the floating material that has flowed on this gas flow is efficiently collected by the deposition shields 5 and 50, and the collection effect is further improved. Although the gas flow in the vacuum container 1 is small in a steady state, a considerable gas flow is generated when the exhaust is started from the atmospheric pressure or when the gas introduction mechanism 2 starts the gas introduction.

Regarding the function and effect of such a porous material, the size and density of pores are particularly important. According to the study by the inventor of the present application, the size of the hole is 0.5 mm to 1
The optimum value is about mm. That is, if the holes are too large, the floating material will pass through and reach the inner surface of the vacuum container 1 behind, and if the holes are too small, the particles will be clogged immediately and the effect will be lost. However, the size and density of the pores of such a porous material are actually expressed by the volume opening ratio r (= (volume of the portion other than the pores) / (total volume including the pores) × 100), and r Is preferably about 3 to 12.

The upper limit of r in this case is also related to the flexibility of the material forming the holes. That is, when r is increased to increase the volume ratio of the hole portion, the amount of the material portion forming the hole decreases, and the rigidity of that portion decreases. If the rigidity is reduced too much, there is a problem in strength, but if there is no flexibility to some extent, there is a problem that the deformation due to the internal stress of the thin film cannot be tolerated. That is, as the attachment of the floating material to the holes progresses, a thin film is deposited inside. The deposited thin film deforms to relieve the internal stress, but if the rigidity of the material around the hole is high, this deformation is not allowed, so the thin film will crack and peel. The peeled thin film becomes dust as in the conventional case.

Such flexibility can be achieved, for example, when the porous material is made of alumina and molded so that the volume opening ratio r is about 9. The porous material is molded by enclosing the molten material in a predetermined molding machine, compressing it while blowing a predetermined high-pressure gas, and cooling it. The volume aperture ratio is calculated by comparing the weight per unit volume when molded as a porous structure with the weight per unit volume when molded without forming pores.

Further, in the operation of the apparatus of the present embodiment described above, it is more preferable that the shield bias voltage mechanism 53 applies a predetermined shield bias voltage to the deposition shield 5. That is, by applying a shield bias voltage such that the thin film deposited on the deposition shield 5 is sputtered by the ions in the plasma,
Thin film deposition on the deposition shield 5 is suppressed.

It is also effective to remove the thin film deposited on the deposition shield 5 by plasma etching. For example, the production of the above-mentioned silicon oxide thin film is performed 60 times.
If it is repeated about 0 times, a thick thin film will be deposited inside the holes of the deposition shield 5. In this case, the deposition shield 5 itself may be replaced as described above, but it is more preferable to remove the thin film by plasma etching. When performing plasma etching,
A fluorine-based gas such as carbon tetrafluoride is introduced into the vacuum container 1 by the gas introduction mechanism 2, and plasma is formed by the power supply mechanism 3. Fluorine-based excited active species are generated in the plasma, and the excited active species enter the inside of the pores, whereby the thin film deposited inside is etched and removed. That is, the excited active species reacts with the thin film to generate a volatile substance, and the volatile substance is discharged by the exhaust system to remove the thin film.

The vacuum processing apparatus of the above-described embodiment can be modified in structure so as to utilize helicon wave plasma. The helicon wave plasma utilizes the fact that an electromagnetic wave with a frequency lower than the plasma frequency propagates in the plasma without being attenuated when a strong magnetic field is applied, and has recently attracted attention as a technology that can generate high-density plasma at low pressure. There is something. When the propagation direction of the electromagnetic wave in the plasma and the direction of the magnetic field are parallel, the electromagnetic wave becomes circularly polarized light in a certain fixed direction and travels spirally. For this reason, it is called helicon wave plasma. In the case of forming helicon wave plasma, a loop-shaped antenna formed by bending a single rod-shaped member into a round upper and lower two-stage loop shape is replaced with the high-frequency coil 31 in FIG. 1 so as to surround the outside of the bell jar 11. A DC electromagnet as a helicon wave magnetic field setting means is arranged concentrically with the bell jar 12 on the outside thereof.
13.56 MH from the high frequency power supply 23 through the matching unit 22
When a high frequency wave of z is supplied into the bell jar 12, the helicon wave plasma is formed by the action of the magnetic field.

In the description of the above embodiments, plasma vapor deposition was taken as an example of vacuum processing, but the invention of the present application is not limited to this, and is applicable to various vacuum processing such as plasma etching and sputtering. Can be applied to.

[0034]

As described above, according to the invention described in claim 1 of the present application, since the adhesion of the floating material to the inner surface of the vacuum container is prevented by the deposition shield, the thin film deposited on the inner surface of the container is prevented. The problem caused by peeling is solved, and high-quality vacuum processing can be performed. Further, according to the invention of claim 2, since the deposition shield is configured to cover the entire inner surface of the vacuum container, the effect of claim 1 is further improved. According to the invention of claim 3, in the effect of claim 1 or 2, the suspended particles carried on the gas flow passing through the deposition shield are efficiently collected by the deposition shield. Collective effect is improved. According to the invention of claim 4, in the effect of claim 1, 2 or 3,
Since the thin film deposited on the deposition shield is allowed to deform while relaxing the internal stress, peeling of the thin film is suppressed and the dustproof effect is further improved. Further, according to the invention of claim 5, in the effect of claim 1, 2, 3 or 4, the deposition shield can be exchanged, so that by collecting the effect of collecting the floating material, a higher quality can be obtained. The vacuum process can be continued. Further, according to the invention of claim 6, it is possible to perform the process using plasma while obtaining the effect of claim 1, 2, 3, 4 or 5. Further, according to the invention of claim 7, in addition to the effect of claim 6, the thin film deposited on the deposition shield can be removed by etching, so that the trapping effect of the floating material is reproduced to further improve the quality. Vacuum processing can be continued. According to the invention of claim 8, the above-mentioned claim 6
Alternatively, in obtaining the effect of 7, since the shield bias voltage is applied to the deposition shield, it is possible to obtain the effect of spattering the deposited thin film and re-emitting it, or improving the efficiency of thin film removal by plasma etching.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a vacuum processing apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a configuration of gas introduction bodies 212 and 222 in FIG.

FIG. 3 is a perspective view illustrating the appearance of a deposition shield.

FIG. 4 is a schematic cross-sectional view illustrating the function and effect of the deposition shield.

FIG. 5 shows a schematic configuration of a plasma vapor deposition apparatus as an example of a conventional vacuum processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 11 Exhaust system 2 Gas introduction mechanism 3 Electric power supply mechanism 4 Substrate holder 40 Substrate as an object 5 Deposition shield 50 Auxiliary deposition shield 53 Shield bias voltage application mechanism

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] September 20, 1995

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be amended] Claims

[Correction method] Change

[Correction content]

[Patent Claims]

4. The claim 4 is characterized in that the deposition shield has at least flexibility enough to allow deformation due to internal stress of the thin film deposited in the hole portion. Vacuum processing equipment.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] 0003

[Correction method] Change

[Correction content]

The vacuum processing apparatus shown in FIG. 5 includes a vacuum container 1 having an exhaust system 11, a gas introducing mechanism 2 for introducing a predetermined gas into the vacuum container 1, and a plasma by applying energy to the introduced gas. Power supply mechanism 3 for forming a substrate, and a substrate holder 4 for mounting a substrate 40 as an object.
It is mainly composed of. In the apparatus of FIG. 5, the substrate 40 is loaded into the vacuum container 1 through a gate valve (not shown) and placed on the substrate holder 4. After exhausting the inside of the vacuum container 1 by the exhaust system 11, a predetermined gas is introduced by the gas introduction mechanism 2 . Next, energy such as high frequency power is applied to the gas in the vacuum container 1 by the power supply mechanism 3 to form plasma. Then, a predetermined thin film is deposited on the surface of the substrate by the gas phase reaction generated by the plasma. For example, when silane gas and oxygen gas are introduced by the gas introduction mechanism 2, a decomposition reaction or the like is caused by plasma, and a thin film of silicon oxide is formed on the surface of the substrate.

[Procedure 3]

[Document name to be amended] Statement

[Name of item to be corrected] 0005

[Correction method] Change

[Correction content]

[0005]

In order to achieve the above object, the invention according to claim 1 of the present application comprises a vacuum container and an exhaust system for exhausting the inside of the vacuum container. In a vacuum processing apparatus that places an object at a position and performs a predetermined process, in order to prevent a material floating in the vacuum container from adhering to the inner surface of the vacuum container and prevent a thin film from being deposited on the inner surface. The deposition shield is provided so as to cover the inner surface, and the deposition shield is formed of a plate-shaped member made of a porous material and having a predetermined thickness. Similarly, in order to achieve the above object, in the invention according to claim 2, in the structure according to claim 1, the deposition shield is provided so as to cover the entire inner surface of the vacuum container except the opening portion. Similarly, in order to achieve the above object, in the invention according to claim 3, in the structure according to claim 1 or 2, the deposition shield is formed to have air permeability, and a gas flow in the vacuum container. When the gas is generated, the gas is allowed to flow through the deposition shield. Similarly, in order to achieve the above object, the invention according to claim 4 is the structure according to claim 1, 2 or 3, wherein the deposition shield allows deformation of the thin film deposited in the hole portion due to internal stress. It has at least flexibility. Similarly, in order to achieve the above object, in the invention according to claim 5, in the structure of claim 1, 2, 3 or 4, the deposition shield is replaceably provided. Similarly, in order to achieve the above object, the invention of claim 6 is the structure of claim 1, 2, 3, 4 or 5, wherein a gas introducing mechanism for introducing a predetermined gas into the vacuum container is introduced. And a power supply mechanism for forming plasma by applying energy to the gas, and is configured to be able to perform a predetermined process on an object using the formed plasma. Similarly, in order to achieve the above object, the invention according to claim 7 is the structure according to claim 1, 2, 3, 4, 5 or 6, wherein the gas introduction mechanism performs plasma etching on the thin film deposited on the deposition shield. The gas that can be removed by the above is introduced into the vacuum container. Similarly, in order to achieve the above object, the invention according to claim 8 is the shield bias voltage for applying the shield bias voltage to the deposition shield in the structure according to claim 1, 2, 3, 4, 5, 6 or 7. An application mechanism is provided.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0006

[Correction method] Change

[Correction content]

[0006]

EXAMPLES Examples of the present invention will be described below. FIG.
FIG. 1 is a schematic diagram of a vacuum processing apparatus according to an embodiment of the present invention.
The vacuum device shown in FIG. 1 is similar to the device shown in FIG.
A vacuum container 1, a gas introduction mechanism 2 for introducing a predetermined gas into the vacuum container 1, and a power supply mechanism 3 for applying energy to the introduced gas to form plasma.
It has a substrate holder 4 for mounting a substrate for forming a thin film. The apparatus of this embodiment is a vacuum container.
Material suspended has a deposition shield 5 for preventing the thin film is deposited on the inner surface to prevent from adhering to the inner surface of the vacuum chamber 1 to 1.

[Procedure Amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Change

[Correction content]

A substrate holder 4 is provided below the bell jar 12 in the vacuum container 1. The substrate holder 4 mounts a substrate 40 for forming a thin film on the upper surface thereof, and has a built-in temperature adjusting mechanism 41 for heating or cooling the substrate 40 as necessary. The substrate holder 4 is provided with a substrate bias voltage applying mechanism 42 for applying a predetermined substrate bias voltage to the substrate 40 by the interaction between generated plasma and high frequency.
The substrate bias voltage applying mechanism 42 includes a substrate matching box 421.
And a substrate high-frequency power source 422 that generates a predetermined high-frequency power applied via the substrate matching device 421. The “bias voltage due to interaction between plasma and high frequency” requires that a considerable capacitance exists between the high frequency power supply 422 and the plasma. Therefore, when the substrate holder 4 and the substrate 40 are all made of metal, a predetermined capacitor is arranged on the power supply line to the substrate holder 4.

[Procedure correction 6]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction content]

The second shield support 52 is also an annular member having a band plate formed in a circumferential shape. The second shield support body 52 is arranged so that the edge portion of the plate is fixed to the side wall portion of the vacuum container 1. As shown in FIG. 1, the second shield support body 52 is bent upward from the middle, and the bent portion (hereinafter referred to as the tip) supports the deposition shield 5. It should be noted that the tip portion does not form a complete ring, but is divided into a plurality of arcs each having a predetermined distance and provided in plural.

Claims (8)

[Claims] 1. A vacuum processing apparatus comprising: a vacuum container; and an exhaust system for exhausting the inside of the vacuum container, wherein an object is placed at a predetermined position in the vacuum container to perform a predetermined process. A deposition shield for preventing a material floating in the inside from adhering to the inner surface of the vacuum container and preventing a thin film from being deposited on the inner surface is provided so as to cover the inner surface. A vacuum processing apparatus comprising a plate-shaped member made of a porous material and having a predetermined thickness. 2. The vacuum processing apparatus according to claim 1, wherein the deposition shield is provided so as to cover the entire inner surface of the vacuum container except the opening. 3. The deposition shield is formed to have air permeability, and is arranged in a state in which the gas can flow through the deposition shield when a gas flow occurs in the vacuum container. The vacuum treatment device according to claim 1, wherein the vacuum treatment device is provided. 4. The deposition preventive shield has at least flexibility to allow deformation of the thin film deposited in the hole portion due to internal stress. Vacuum processing equipment. 5. The vacuum processing apparatus according to claim 1, wherein the deposition shield is provided so as to be replaceable. 6. The formed plasma is provided with a gas introduction mechanism for introducing a predetermined gas into the vacuum container and a power supply mechanism for giving energy to the introduced gas to form plasma. 6. The vacuum processing apparatus according to claim 1, wherein the vacuum processing apparatus is configured to be able to perform a predetermined processing on an object. 7. The gas introducing mechanism is configured to introduce a gas capable of removing the thin film deposited on the deposition shield by plasma etching into the vacuum container. The vacuum processing apparatus described. 8. The vacuum processing apparatus according to claim 6, further comprising a shield bias voltage applying mechanism that applies a shield bias voltage to the deposition shield.