JPH0262696U - - Google Patents
Info
- Publication number
- JPH0262696U JPH0262696U JP14318088U JP14318088U JPH0262696U JP H0262696 U JPH0262696 U JP H0262696U JP 14318088 U JP14318088 U JP 14318088U JP 14318088 U JP14318088 U JP 14318088U JP H0262696 U JPH0262696 U JP H0262696U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- light emitting
- emitting layer
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Description
第１図は、本考案の実施例１を示すパネル周辺
部の断面図である。第２図は実施例２を示す直流
駆動型薄膜ＥＬパネルの周辺断面図の一例である
。第３図、第４図は、従来例を説明するための一
般的な二重絶縁構造交流駆動型薄膜ＥＬパネルの
断面図及び周辺部拡大断面図である。
１……ガラス基板、２……透明電極、３……第
１絶縁層、４……発光層、５……第２絶縁層、６
……背面電極、７……基板（例えばｎ―ＧａＡｓ
）、８……半導体層（例えばＺｎＳｅ：Ｇａ）、
９……透明電極層（例えばＡｕ、ＩＴＯなど）。
FIG. 1 is a sectional view of the peripheral portion of a panel showing Example 1 of the present invention. FIG. 2 is an example of a peripheral sectional view of a DC-driven thin film EL panel showing a second embodiment. 3 and 4 are a sectional view and an enlarged sectional view of the peripheral portion of a general double-insulated structure AC-driven thin film EL panel for explaining a conventional example. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode, 3... First insulating layer, 4... Light emitting layer, 5... Second insulating layer, 6
. . . Back electrode, 7 . . . Substrate (e.g. n-GaAs
), 8... semiconductor layer (for example, ZnSe:Ga),
9...Transparent electrode layer (for example, Au, ITO, etc.).
Claims (1)
極によつて狭持してなる薄膜ＥＬパネルにおいて
、 発光層の後に形成される薄膜層の面積が発光層
よりも小さく、かつ、発光層面内に形成されるこ
とを特徴とする薄膜ＥＬパネル。 ２ 薄膜層が絶縁層である実用新案登録請求の範
囲第１項記載の薄膜ＥＬパネル。 ３ 薄膜層が半導体層である実用新案登録請求の
範囲第１項記載の薄膜ＥＬパネル。[Claims for Utility Model Registration] 1. In a thin film EL panel comprising a light emitting layer and at least one thin film layer sandwiched between a pair of electrodes, the thin film layer formed after the light emitting layer has an area larger than that of the light emitting layer. A thin film EL panel characterized by being small in size and formed within the plane of a light emitting layer. 2. The thin film EL panel according to claim 1, wherein the thin film layer is an insulating layer. 3. The thin film EL panel according to claim 1, wherein the thin film layer is a semiconductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14318088U JPH0262696U (en) | 1988-10-31 | 1988-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14318088U JPH0262696U (en) | 1988-10-31 | 1988-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0262696U true JPH0262696U (en) | 1990-05-10 |
Family
ID=31409769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14318088U Pending JPH0262696U (en) | 1988-10-31 | 1988-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0262696U (en) |
-
1988
- 1988-10-31 JP JP14318088U patent/JPH0262696U/ja active Pending