JPH0262630A - Memory and its using method - Google Patents

Abstract

PURPOSE:To easily change a program by preparing a memory part at the head of each mask ROM to write a jump instruction. CONSTITUTION:A memory 2 which stores the program of a numerical controller or a robot device consists of the mask ROM parts 4a - 4c containing the mask ROMs and storing the programs A - C, and the rewritable nonvolatile memory parts 3a - 3c which contain the EPROMs or EEPROMs and allocated at the heads of the parts 4a - 4c with the NOP instructions written at first. If the program data has a change, for example, the data B is rewritten into a jump instruction to make the NOP instruction of a nonvolatile memory part 3b set at the head of a mask ROM part 4b jump to a prescribed address of another memory. Thus it is possible to perform a batch process of the mask ROM parts and the change of the program is facilitated.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a rewritable memory and a method of using the memory, and particularly to an economical partially rewritable memory and a program using this memory. Some changes regarding memory usage.

[Conventional technology]

The operations of numerical control units (CNC) and robot devices are controlled by various programs, and these programs need to be stored even after the power is turned off.

On the other hand, with this kind of equipment, when correcting program errors,
Alternatively, it may be necessary to change part of the program when upgrading the performance of the device. For this reason, these program data are stored in a rewritable nonvolatile memory such as an EPROM or an EEPROM so that the program can be changed.

[Problem to be solved by the invention]

Incidentally, a large capacity memory is required to store these program data, but such a large capacity EPROM or EEPROM is expensive. Also,
First, it is necessary to write all the program data.
When the capacity is on the order of M bits, the time required for writing will be on the order of several minutes to several tens of minutes, and the cost involved will also be considerable.

On the other hand, if program data is stored in a mask ROM, the cost of the memory itself will be low and writing will become unnecessary.

However, even when changing part of the program data,
Since the old version cannot be used, it cannot necessarily be said that it is economical.

The present invention has been made in view of these points, and provides an economical memory in which a mask ROM part and a non-volatile memory part are combined to make it partially rewritable, and a program using this memory. The purpose is to provide a memory usage method that changes some parts.

[Means for Solving the Problems] In order to solve the above problems, the present invention provides a partially rewritable memory that includes a plurality of mask ROM sections that are divided and arranged for each fixed capacity, and each of the mask ROM sections. A memory is provided, comprising: a plurality of rewritable non-volatile memory sections disposed at the beginning; and a jump instruction is written in the non-volatile memory section of the memory, and the jump instruction: A method of using memory is provided, characterized in that a part of the program is changed by patch processing by jumping from the memory address to another memory address.

[Effect]

A memory is constructed by arranging mask ROM parts divided into parts having a certain capacity, and rewritable nonvolatile memory parts being arranged at the head of each of these mask ROM parts. Note that each mask ROM section stores predetermined program data divided into fixed capacity units, and the nonvolatile memory section stores NOP data.
Write down the command.

When changing part of a program, rewrite the NOP instruction in the nonvolatile memory section at the beginning of the mask ROM section that stores the program data of the part to be changed to a jump instruction that jumps to another memory address. . By storing the changed program data in another memory, the program is patched and changed to predetermined contents.

〔Example〕

Hereinafter, one embodiment of the present invention will be described based on the drawings.

FIG. 1 is a memory map showing the configuration of a memory according to an embodiment of the present invention. In the figure, l indicates an address. 2 is the content of the program data.

Note that in this embodiment, the program data is 2 bytes, 16
Consists of bits * 3 a 13 b % 3
c...---...-- is a nonvolatile memory section. The address roo0000 is in the non-volatile memory section 3a.
H” and 7000001) 11 are assigned,
A NOP command N0PlaSNOP2a is written in each of them in advance.

The address r000200H is in the non-volatile memory section 3b.
and r000201H” have been allocated, and N
OP commands NOP 1 b and N0P2 b are written. Similarly, N
OP instructions are written in 2 bytes each. Note that these nonvolatile memory units 3a, 3b, 3
c. ----------- is constructed of EPROM or EEPROM.

4a, 4b, 4c,---------
is a mask ROM section. The mask ROM section 4a has addresses rOO0002H'' to rO001FFH1.
is assigned, and program data A, which is a part of the program, is stored. The mask ROM section 4b has addresses roOO202HJ to roo03FF.
H'' is assigned, and program data B, which is another part of the program, is stored. Similarly, predetermined program data is stored in each mask ROM section.

Here, a case will be described in which a program is created by changing the part of the program data B stored in the mask ROM section 4b. In this case, the mask ROM
The NOP instructions N0P1b and N0P2b in the nonvolatile memory section 3b at the beginning of the section 4b are rewritten to jump instructions for jumping to a predetermined address in another memory.

FIG. 2 shows the memory map after this rewriting. In the figure, the same numbers as in FIG. 1 are the same as in FIG. 1, and the explanation will be omitted.

31b is a jump instruction for jumping to a predetermined address in another memory (not shown).

Another memory is small capacity EPROM or EEPROM.
etc., and the changed program data is stored at a predetermined address, and at the end of the program data, a return instruction to the program data C of this memory is provided.

As a result, the address r000202 of this memory shown in 5
HJ ~ ro 003 FFHJ (D CH'l car hatch processing is performed, and predetermined changed program data is obtained.

It should be noted that the capacity of each of the above-mentioned contingency memory sections and the capacity of each mask ROM section are merely examples, and can be increased or decreased depending on the size of the program of the device to be used.

〔Effect of the invention〕

As explained above, the memory of the present invention includes each mask ROM.
Since a rewritable non-volatile memory section is placed at the beginning of the memory section, by writing a jump instruction to another memory in this non-volatile memory section, the mask RO
It becomes possible to perform patch processing on the M section. Therefore, even if a part of the program is changed, the memory of the old version is not wasted, which is economical.

In addition, another memory used in this case is a small capacity EPR.
Since OM etc. is sufficient, the entire program data can be stored in a large capacity E.
The cost is lower than when storing in PROM. Furthermore, since it is not necessary to write all program data, the time and cost required for conventional writing can be saved.

・-----1-----Mask ROM section 5...
・・・−−−−−−−・−Patch processing section NOP 1 a
S NOP 1 b-・-----1・-・-・-NO
P instruction 31b---1---Jump instruction patent applicant FANUC Co., Ltd. agent Patent attorney Takeshi Hattori

[Brief explanation of the drawing]

FIG. 1 is a memory map diagram of a memory according to an embodiment of the present invention, and FIG. 2 is a memory map diagram when a program is changed using the memory according to an embodiment of the present invention. １−・〜・−−−−−−１・・−Address 2・−・−・
...--Data contents 3 a, 3 b, 3 (- ・Non-volatile memory section

Claims (3)

[Claims] (1) In a partially rewritable memory, a plurality of mask ROM sections are divided and arranged at fixed capacity intervals, and a plurality of rewritable nonvolatile memory sections are arranged at the beginning of each of the mask ROM sections. A memory characterized by having. (2) The nonvolatile memory section is EPROM or EE.
The memory according to claim 1, characterized in that it is constituted by a PROM. (3) Writing a jump instruction into the non-volatile memory section of the memory according to claim 1, causing a jump from an address in the memory to another address in the memory, and patching a part of the program. A memory usage method characterized by changing the .