JPH0260065B2 - - Google Patents

Info

Publication number
JPH0260065B2
JPH0260065B2 JP18121185A JP18121185A JPH0260065B2 JP H0260065 B2 JPH0260065 B2 JP H0260065B2 JP 18121185 A JP18121185 A JP 18121185A JP 18121185 A JP18121185 A JP 18121185A JP H0260065 B2 JPH0260065 B2 JP H0260065B2
Authority
JP
Japan
Prior art keywords
substrate
quartz
jig
holding
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18121185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242428A (ja
Inventor
Michiharu Ito
Koji Hirota
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18121185A priority Critical patent/JPS6242428A/ja
Publication of JPS6242428A publication Critical patent/JPS6242428A/ja
Publication of JPH0260065B2 publication Critical patent/JPH0260065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP18121185A 1985-08-19 1985-08-19 結晶成長装置 Granted JPS6242428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18121185A JPS6242428A (ja) 1985-08-19 1985-08-19 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18121185A JPS6242428A (ja) 1985-08-19 1985-08-19 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6242428A JPS6242428A (ja) 1987-02-24
JPH0260065B2 true JPH0260065B2 (enExample) 1990-12-14

Family

ID=16096769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18121185A Granted JPS6242428A (ja) 1985-08-19 1985-08-19 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6242428A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264377A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd ビデオプリンタ
JP2607641B2 (ja) * 1988-10-03 1997-05-07 株式会社日立製作所 ビデオプリンタ

Also Published As

Publication number Publication date
JPS6242428A (ja) 1987-02-24

Similar Documents

Publication Publication Date Title
JPH0260065B2 (enExample)
DK0495817T3 (da) Fremgangsmåde til dyrkning af enmymkrystaller
JPS6242427A (ja) 結晶成長装置
Fullmer et al. Crystal growth of the solid electrolyte RbAg4I5
JPH0514162U (ja) 液相エピタキシヤル法用基板ホルダ−
JPS61228634A (ja) 半導体結晶の製造方法
JPS6021897A (ja) 液相エピタキシヤル結晶成長方法
JPH05330979A (ja) 液相エピタキシャル成長装置
JP4870859B2 (ja) 液相エピタキシャル成長装置及び成長方法
JPH05330984A (ja) 液相エピタキシャル成長装置
JPS61271845A (ja) 液相エピタキシヤル成長装置
JPH02218139A (ja) 液相エピタキシャル結晶成長装置
JPS60145608A (ja) 液相エピタキシヤル成長方法
JPH05330983A (ja) 液相エピタキシャル成長装置
JPH01179786A (ja) 液相エピタキシャル成長装置
JPS61156743A (ja) 液相エピタキシアル成長装置
JPH0143404Y2 (enExample)
JPS6217095A (ja) 化合物半導体単結晶の育成方法とそれに用いる石英アンプル
JPH0352241A (ja) 液相エピタキシャル結晶成長方法
JPH034028Y2 (enExample)
JPH05330981A (ja) 液相エピタキシャル成長装置
JPH05330978A (ja) 液相エピタキシャル成長装置
JPS634627A (ja) 液相エピタキシヤル結晶成長用治具
JPH058154B2 (enExample)
JPS60123024A (ja) 液相エピタキシャル結晶成長方法および装置