JPH0259626B2 - - Google Patents

Info

Publication number
JPH0259626B2
JPH0259626B2 JP57229947A JP22994782A JPH0259626B2 JP H0259626 B2 JPH0259626 B2 JP H0259626B2 JP 57229947 A JP57229947 A JP 57229947A JP 22994782 A JP22994782 A JP 22994782A JP H0259626 B2 JPH0259626 B2 JP H0259626B2
Authority
JP
Japan
Prior art keywords
semiconductor film
substrate
forming
film according
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57229947A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123239A (ja
Inventor
Hiroyuki Sasabe
Shunsuke Kobayashi
Koichi Kamisako
Yoshiaki Tsuruoka
Hiroyuki Okada
Yasuharu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP57229947A priority Critical patent/JPS59123239A/ja
Publication of JPS59123239A publication Critical patent/JPS59123239A/ja
Publication of JPH0259626B2 publication Critical patent/JPH0259626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3436—
    • H10P14/265—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57229947A 1982-12-28 1982-12-28 半導体膜の形成方法 Granted JPS59123239A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57229947A JPS59123239A (ja) 1982-12-28 1982-12-28 半導体膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57229947A JPS59123239A (ja) 1982-12-28 1982-12-28 半導体膜の形成方法

Publications (2)

Publication Number Publication Date
JPS59123239A JPS59123239A (ja) 1984-07-17
JPH0259626B2 true JPH0259626B2 (enExample) 1990-12-13

Family

ID=16900207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57229947A Granted JPS59123239A (ja) 1982-12-28 1982-12-28 半導体膜の形成方法

Country Status (1)

Country Link
JP (1) JPS59123239A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3027275B2 (ja) * 1991-12-23 2000-03-27 ゼネラル・エレクトリック・カンパニイ モニタスクリーン上でカーソルを位置させる装置
FR3042068B1 (fr) * 2015-10-02 2018-06-15 Electricite De France Procede de depot d'une couche tampon sur un film semi-conducteur par photocatalyse

Also Published As

Publication number Publication date
JPS59123239A (ja) 1984-07-17

Similar Documents

Publication Publication Date Title
EP0541382B1 (en) Process for making ohmic contacts and photovoltaic cell with ohmic contact
ATE81923T1 (de) Verfahren zur herstellung einer schicht aus einem metalloxidischen supraleitermaterial mittels laser-verdampfens.
JPS5679449A (en) Production of semiconductor device
US4178395A (en) Methods for improving solar cell open circuit voltage
JPS5731144A (en) Mamufacture of semiconductor device
JP2000091570A5 (enExample)
JPH0259626B2 (enExample)
JP2759125B2 (ja) エキシマレーザーによる金属酸化物および金属酸化物薄膜の製造方法
JPS5717125A (en) Manufacture of semiconductor device
JPS55153339A (en) Manufacture of semiconductor device
US4126713A (en) Forming films on semiconductor surfaces with metal-silica solution
JPS55127016A (en) Manufacturing of semiconductor device
JP2553926B2 (ja) 選択的金属薄膜の形成方法
ATE86795T1 (de) Herstellungsverfahren einer niedergeschlagenen schicht.
JPS56142448A (en) Engyme electrode
GB2380320A (en) Method for the sulphidation treatment of III-V compound semiconductor surfaces
CN110752296B (zh) 溶液法制备ofet中顶接触源漏电极的方法
JPH06179764A (ja) 紫外レーザーを用いた高分子成形品表面および固体基板表面への有機化合物の固定化方法
JPS5512726A (en) Process for manufacturing semiconductor substrate
Beck et al. The Isolation of Surface Films from Copper
JPH01152773A (ja) 収束ビーム技法を用いる薄膜超電導体の模様づけ
JPS566434A (en) Manufacture of semiconductor device
JPS55111128A (en) Manufacturing method of semiconductor device
US4190458A (en) Metal-silica solution for forming films on semiconductor surfaces
JPS5627990A (en) Formation of semiconductor ohmic electrode