JPH0257337B2 - - Google Patents

Info

Publication number
JPH0257337B2
JPH0257337B2 JP56065904A JP6590481A JPH0257337B2 JP H0257337 B2 JPH0257337 B2 JP H0257337B2 JP 56065904 A JP56065904 A JP 56065904A JP 6590481 A JP6590481 A JP 6590481A JP H0257337 B2 JPH0257337 B2 JP H0257337B2
Authority
JP
Japan
Prior art keywords
film
semiconductor film
silicon
single crystal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56065904A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57180117A (en
Inventor
Kikuo Yamabe
Kenji Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56065904A priority Critical patent/JPS57180117A/ja
Publication of JPS57180117A publication Critical patent/JPS57180117A/ja
Publication of JPH0257337B2 publication Critical patent/JPH0257337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3814—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H10P14/2905—
    • H10P14/3238—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3818—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP56065904A 1981-04-30 1981-04-30 Manufacture of semiconductor device Granted JPS57180117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56065904A JPS57180117A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065904A JPS57180117A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180117A JPS57180117A (en) 1982-11-06
JPH0257337B2 true JPH0257337B2 (enExample) 1990-12-04

Family

ID=13300409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065904A Granted JPS57180117A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180117A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0775223B2 (ja) * 1987-12-19 1995-08-09 工業技術院長 半導体単結晶層の製造方法
JPH01264214A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置の製造方法
JP5094099B2 (ja) * 2006-12-04 2012-12-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JPS57180117A (en) 1982-11-06

Similar Documents

Publication Publication Date Title
US4448632A (en) Method of fabricating semiconductor devices
US4381201A (en) Method for production of semiconductor devices
US4933298A (en) Method of making high speed semiconductor device having a silicon-on-insulator structure
EP0015677B1 (en) Method of producing semiconductor devices
JP2923700B2 (ja) 半導体装置およびその作製方法
CA1197628A (en) Fabrication of stacked mos devices
US4661167A (en) Method for manufacturing a monocrystalline semiconductor device
JPS62160712A (ja) 半導体装置の製造方法
JPH0257337B2 (enExample)
JPH0580159B2 (enExample)
JPS6342417B2 (enExample)
JPS6356912A (ja) 再結晶半導体薄膜の製造方法
JPS6159820A (ja) 半導体装置の製造方法
JPH0376017B2 (enExample)
JPS63265464A (ja) 半導体装置の製造方法
JPS58175844A (ja) 半導体装置の製造方法
JP2526380B2 (ja) 多層半導体基板の製造方法
JP2745055B2 (ja) 単結晶半導体薄膜の製造方法
JP2857480B2 (ja) 半導体膜の製造方法
JPH0793259B2 (ja) 半導体薄膜結晶層の製造方法
JPS6032349B2 (ja) 半導体装置の製造方法
JPH0368532B2 (enExample)
JPS5893219A (ja) 半導体装置の製造方法
JPH0243331B2 (enExample)
JPS6091624A (ja) 半導体装置