JPH0253062A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH0253062A JPH0253062A JP20513688A JP20513688A JPH0253062A JP H0253062 A JPH0253062 A JP H0253062A JP 20513688 A JP20513688 A JP 20513688A JP 20513688 A JP20513688 A JP 20513688A JP H0253062 A JPH0253062 A JP H0253062A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- water
- soluble resin
- pattern forming
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 19
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 3
- 229920001218 Pullulan Polymers 0.000 claims abstract description 3
- 239000004373 Pullulan Substances 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 3
- 235000019422 polyvinyl alcohol Nutrition 0.000 claims abstract description 3
- 235000019423 pullulan Nutrition 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000001989 diazonium salts Chemical class 0.000 claims description 4
- BYTAIBJKCPHFPT-UHFFFAOYSA-N 4-(dimethylamino)naphthalene-1-diazonium Chemical class C1=CC=C2C(N(C)C)=CC=C([N+]#N)C2=C1 BYTAIBJKCPHFPT-UHFFFAOYSA-N 0.000 claims description 2
- NJYDJNRTEZIUBS-UHFFFAOYSA-N 4-morpholin-4-ylbenzenediazonium Chemical class C1=CC([N+]#N)=CC=C1N1CCOCC1 NJYDJNRTEZIUBS-UHFFFAOYSA-N 0.000 claims description 2
- BIHDOXAXFMXYDF-UHFFFAOYSA-N 4-anilinobenzenediazonium Chemical class C1=CC([N+]#N)=CC=C1NC1=CC=CC=C1 BIHDOXAXFMXYDF-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 208000014205 familial febrile seizures Diseases 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BIAWAXVRXKIUQB-UHFFFAOYSA-N 2-(2-phenylethenyl)pyridine Chemical class C=1C=CC=CC=1C=CC1=CC=CC=N1 BIAWAXVRXKIUQB-UHFFFAOYSA-N 0.000 description 1
- -1 4-dimethylaminonaphthalene diazonium chloride zinc chloride salt Chemical compound 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000036553 familial 6 febrile seizures Diseases 0.000 description 1
- 208000013098 familial febrile seizures 6 Diseases 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- SQDFHQJTAWCFIB-UHFFFAOYSA-N n-methylidenehydroxylamine Chemical class ON=C SQDFHQJTAWCFIB-UHFFFAOYSA-N 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体製造等におけるパターン形成方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pattern forming method in semiconductor manufacturing and the like.
従来の技術
半導体製造工程のｅ細化に対応して、パターン形成方法
にもさまざまな工夫がなされてきた。ポスト・イクスポ
ージュア・ベーク（ＦＥＢ）法は、特にパターンの定在
波を消去するという点で、パターン寸法の安定化や素子
の歩留まり向上に寄与する〔たとえば、Ｅ、Ｔ、Ｗａｌ
ｋｅｒ、フイイーイーイトランザクション エレクトロ
ン デバイス（ＩＥＥＥＴｒａｎｓ、Ｅｌｅｃｔｒｏｎ
Ｄｅｖ、）ＥＤ−２２，４８４（１９７５）、１とこ
ろが、このようなＰＥＢ法は、用いるレジストの膜厚に
よっては、パターンの変形が生じるという問題点が発生
した。第２図を用いて、従来のパターン形成方法を説明
する。2. Description of the Related Art In response to the e-slimming of semiconductor manufacturing processes, various improvements have been made to pattern forming methods. The post-exposure bake (FEB) method contributes to stabilizing pattern dimensions and improving device yield, especially in that it eliminates standing waves in the pattern [for example, E., T., Wal et al.
ker, IEEE Transaction Electron Device (IEEETrans, Electron
Dev, ) ED-22, 484 (1975), 1 However, such a PEB method has a problem in that the pattern may be deformed depending on the thickness of the resist used. A conventional pattern forming method will be explained with reference to FIG.
基板１上にパターン形成材料２であるＴＳＭＲｖｌ（東
京応化）を１．２μｍ形成しく第２図式）、マスク４を
介して所望のパターン露光５をｑ線ステッパ（ＮＡｏ、
４５ ）により行う（第２図（５））。TSMRvl (Tokyo Ohka), which is a pattern forming material 2, is formed on a substrate 1 to a thickness of 1.2 μm (see second diagram), and a desired pattern is exposed 5 through a mask 4 using a q-ray stepper (NAo,
45) (Fig. 2 (5)).
この後、１００℃９０秒のＦＥＢ６を行い（第２図０）
、アルカリ現像液２．３８％ＮＭＤ−３（東京応化）に
て６ｏ秒間の現像を行い、パターン２Ａ’を形成した（
第２図ｑ）。After this, perform FEB6 at 100°C for 90 seconds (Fig. 2 0)
, Development was performed for 60 seconds using an alkaline developer 2.38% NMD-3 (Tokyo Ohka) to form pattern 2A' (
Figure 2 q).
発明が解決しようとする課題
パターン２ Ａ’は８ｏ０のアヌペクト比をもった０、
５μｍ ライン場アンド・スペースパターンではあった
が、そのパターン上部にパターンエッヂ部のレジスト残
渣が盛り上がって残るという不良が発生した。このよう
なＦＥＢによる不良パターンは、後のエツチングやイオ
ン注入等の後工程での寸法変動や形状不良につながり、
素子全体の歩留まり低下の要因となった。このため、こ
のような従来のパターン形成方法は半導体製造において
危惧すべき問題であった。Problem pattern 2 to be solved by the invention A' is 0 with an anupectance ratio of 8o0,
Although it was a 5 μm line field and space pattern, a defect occurred in that the resist residue at the edge of the pattern was raised and remained on the upper part of the pattern. Such defective patterns caused by FEB lead to dimensional changes and shape defects in subsequent processes such as etching and ion implantation.
This became a factor in reducing the yield of the entire device. For this reason, such conventional pattern forming methods have been problematic in semiconductor manufacturing.
本発明は従来のパターン形成方法が有していたパターン
形状の不良という課題を解決することを目的とする。An object of the present invention is to solve the problem of defective pattern shapes that conventional pattern forming methods have.
課題を解決するだめの手段
本発明は従来技術の有していたパターン形状不良を解決
するために、露光前に水溶性樹脂膜を形成し、その後、
露光・加熱後現像によりパターンを形成することを特徴
とする。Means for Solving the Problems In order to solve the pattern shape defects that the prior art had, the present invention forms a water-soluble resin film before exposure, and then
It is characterized by forming a pattern by exposure, heating, and development.
作 用
本発明者らは、ＦＥＢによるパターンエッヂ部での不良
が水溶性膜の働きによシ解消されることを見出した。こ
れは、ＦＥＢによるレジスト中の感光体の拡散現象〔た
とえば、Ｅ、 Ｉ 、Ｗａｌｋｓｒ。Function: The present inventors have discovered that defects at the edge of a pattern caused by FEB can be eliminated by the action of a water-soluble film. This is due to the diffusion phenomenon of the photoreceptor in the resist due to FEB [for example, E, I, Walksr.
アイイーイーイー トランザクション エレクトロン
デバイス（ＩＥＥＥ Ｔｒａｎｓ、Ｅｌｓｃｔｒｏｎ
Ｄｅｖ、）、ＥＤ−２２。iiii transaction electron
Device (IEEE Trans, Elsctron
Dev, ), ED-22.
４６４（１９７５）、）が エッヂ部で不均一となるこ
とを、本発明のレジスト残渣からの膜の働きにより均一
化できたためと考えられる。464 (1975)), which is non-uniform at the edge portion, is thought to be due to the fact that the film from the resist residue of the present invention was able to make it uniform.
なお、本発明に係る水溶性樹脂は、プルラン、ポリビニ
ルアルコール、ポリビニルピロリドン、ポリ（パラ・ヌ
チレンヌルホン酸）など、又はこれらの混合体が挙げら
れる。もちろん、本発明はこれらに限定されるものでは
ない。In addition, examples of the water-soluble resin according to the present invention include pullulan, polyvinyl alcohol, polyvinylpyrrolidone, poly(para-nuthylene sulfonic acid), or a mixture thereof. Of course, the present invention is not limited to these.
水溶性樹脂材料中に、露光光により光退色する化合物が
含まれていても良く、この場合には、パターンのコント
ラストを向上させる働きも同時に果７’ｃｔこ、！：に
なる（たとえば、Ｍ、 ５ａｓａｑｏ ｅｔ ａｌ。The water-soluble resin material may contain a compound that is photobleached by exposure light, and in this case, it also works to improve the contrast of the pattern. (e.g. M, 5asaqo et al.
グロシーディング オブ エスピーアイイー（Ｐｒｏｃ
ｏｆＳＰＩＥ ） 、 ｅ ３１ 、３２１ （１９８
６）、）。この光退色する化合物としては、ｌ線光用と
しては、４−モルフォリノベンゼンジアゾニウム４．４
−７ニリノベンゼンジアゾニウム塩、ｑ線光用としては
、４−ジメチルアミノナフタレンジアゾニウム塩などの
ジアゾニウム化合物が挙げられるが、もちろん他のジア
ゾニウム化合物やニトロン化合物、スチリルピリジン化
合物であっても良く、又、これらに限定されるものでは
ない。Gross Seeding of SPI (Proc.
ofSPIE), e31, 321 (198
6),). This photobleaching compound for use with l-line light includes 4-morpholinobenzenediazonium 4.4
-7 Nilinobenzenediazonium salts for use with q-ray light include diazonium compounds such as 4-dimethylaminonaphthalenediazonium salts, but of course other diazonium compounds, nitrone compounds, and styrylpyridine compounds may also be used. , but not limited to these.
実施例
（その１）
第１図を用いて本発明の一実施例のパターン形成方法に
ついて説明する。Example (Part 1) A pattern forming method according to an example of the present invention will be described with reference to FIG.
基板１上にパターン形成材料であるＴＳＭＲ−Ｖｌを１
．２μｍ形成しく第１図（Ａ）、この上層にポリビニル
ピロリドンの膜３を０．２μｍ形成した（第１図（Ｂ）
）。マスク４を介して所望のパターン露光５をｑ線ステ
ッパ（ＮＡ Ｏ，４６）により行った（第１図ｑ）。こ
の後、１００℃９０秒のＦＥＢを行い（第１図ｑ）、２
．３８％ＮＭＤ−３にて６０秒の現像を行いパターン２
Ａを形成した（第１図■）。パターン２Ａは８２°のア
スペクト比ヲモった、しかもエッヂ部での不良のない良
好な０．５μｍライン・アンド・スペースパターンが得
られた。TSMR-Vl, which is a pattern forming material, is placed on the substrate 1.
．． A film 3 of polyvinylpyrrolidone was formed to a thickness of 0.2 μm on this upper layer (FIG. 1(B)).
). A desired pattern exposure 5 was performed through a mask 4 using a q-line stepper (NAO, 46) (FIG. 1q). After this, FEB was performed at 100°C for 90 seconds (Fig. 1q), and
．． Developed for 60 seconds with 38% NMD-3 to create pattern 2.
A was formed (Fig. 1 ■). Pattern 2A was a good 0.5 μm line-and-space pattern with an aspect ratio of 82° and no defects at the edges.
なお、水溶性膜は現像と同時に除去された。又、ＰＥＢ
の前に水によシ水溶性膜を除去しても同様の良好な結果
が得られた。Note that the water-soluble film was removed at the same time as development. Also, PEB
Similar good results were obtained by removing the water-soluble membrane by washing with water before washing.
（その２）
水溶性材料として、４−ジメチルアミノナフタレンジア
ゾニウムクロライド塩化亜鉛塩：ポリ（パラ−スチレン
スルホン酸） ：水＝１： １ ：２０の重量比よシ成
る材料を用いて、その１と同様の実験を行い、アヌペク
ト比８８°の欠陥のない０．５μｍライン串アンド・ス
ペースパターンを得た。(Part 2) As a water-soluble material, a material with a weight ratio of 4-dimethylaminonaphthalene diazonium chloride zinc chloride salt: poly(para-styrene sulfonic acid): water = 1: 1: 20 was used. A similar experiment was conducted to obtain a defect-free 0.5 μm line-and-space pattern with an anupectance ratio of 88°.
発明の効果
本発明の方法によれば、半導体製造工程における微細パ
ターンの形成が高アスペクト比でかつ高寸法精度で得ら
れることから、半導体素子の歩留まシが向上し工業的価
値が非常に大きい。Effects of the Invention According to the method of the present invention, fine patterns can be formed in the semiconductor manufacturing process with a high aspect ratio and high dimensional accuracy, which improves the yield rate of semiconductor devices and has great industrial value. big.
第１図へ〜（２）は本発明の一実施例のパターン形成材
料の工程断面図、第２図（５）〜◎は従来のバタン形成
方法の工程断面図である。
１・・・・・・基板、２・・・・・・パターン形成材料
（Ｔ３ＭＲｖ１）、３・・・・・・水溶性膜、４・・・
・・・マスク、５・・・・・・ｑ線光、６・・・・・・
ＰＥＢ（加熱）。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名ノー
一−ＩＬ版FIGS. 1-(2) are process sectional views of a pattern forming material according to an embodiment of the present invention, and FIGS. 2(5)-(2) are process sectional views of a conventional batten forming method. 1...Substrate, 2...Pattern forming material (T3MRv1), 3...Water-soluble film, 4...
...Mask, 5...Q-ray light, 6...
PEB (heating). Name of agent: Patent attorney Shigetaka Awano and 1 other person - IL version
Claims (5)
し、露光後、加熱を行い現像によりパターンを形成して
なるパターン形成方法。(1) A pattern forming method in which a photosensitive resin is formed on a substrate, a water-soluble resin is applied, and a pattern is formed by exposure, heating, and development.
、ポリビニルアルコール、ポリ（パラ・スチレンスルホ
ン酸）のいずれか、又は、これらのいずれかの混合体で
ある特許請求の範囲第１項に記載のパターン形成方法。(2) The pattern according to claim 1, wherein the water-soluble resin is any one of pullulan, polyvinylpyrrolidone, polyvinyl alcohol, poly(para-styrene sulfonic acid), or a mixture of any of these. Formation method.
求の範囲第１項に記載のパターン形成方法。(3) The pattern forming method according to claim 1, wherein the water-soluble resin contains a photobleaching compound.
請求の範囲第３項に記載のパターン形成方法。(4) The pattern forming method according to claim 3, wherein the photobleachable compound is a diazonium compound.
ンジアゾニウム塩、４−アニリノベンゼンジアゾニウム
塩、４−ジメチルアミノナフタレンジアゾニウム塩のい
ずれかである特許請求の範囲第４項に記載のパターン形
成方法。(5) The pattern forming method according to claim 4, wherein the diazonium compound is any one of 4-morpholinobenzenediazonium salt, 4-anilinobenzenediazonium salt, and 4-dimethylaminonaphthalenediazonium salt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63205136A JP2578930B2 (en) | 1988-08-18 | 1988-08-18 | Pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63205136A JP2578930B2 (en) | 1988-08-18 | 1988-08-18 | Pattern formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0253062A true JPH0253062A (en) | 1990-02-22 |
| JP2578930B2 JP2578930B2 (en) | 1997-02-05 |
Family
ID=16502020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63205136A Expired - Lifetime JP2578930B2 (en) | 1988-08-18 | 1988-08-18 | Pattern formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2578930B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08305024A (en) * | 1995-05-08 | 1996-11-22 | Mitsubishi Chem Corp | Coating composition for improvement in performance in lithography and pattern forming method using that coating composition |
| US8080364B2 (en) | 2003-05-09 | 2011-12-20 | Panasonic Corporation | Pattern formation method |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6038821A (en) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | Pattern forming method |
| JPS61121051A (en) * | 1984-11-16 | 1986-06-09 | Fuji Photo Film Co Ltd | Photoresist material |
| JPS6262521A (en) * | 1985-09-13 | 1987-03-19 | Hitachi Ltd | Pattern forming method |
| JPS62133444A (en) * | 1985-12-04 | 1987-06-16 | Matsushita Electric Ind Co Ltd | Pattern-forming organic material |
| JPS62226148A (en) * | 1986-03-27 | 1987-10-05 | Tokyo Ohka Kogyo Co Ltd | Process for forming pattern |
| JPS63108334A (en) * | 1986-10-27 | 1988-05-13 | Tokyo Ohka Kogyo Co Ltd | Composition for contrast improving |
| JPS63114212A (en) * | 1986-10-31 | 1988-05-19 | Sony Corp | Pattern forming method |
| JPS63287950A (en) * | 1987-05-12 | 1988-11-25 | ヘキスト・アクチエンゲゼルシヤフト | Radiosensitive recording material |
| JPH0455323A (en) * | 1990-06-22 | 1992-02-24 | Dainichiseika Color & Chem Mfg Co Ltd | Blue-green pigment of fine-grained multiple oxide and its production |
-
1988
- 1988-08-18 JP JP63205136A patent/JP2578930B2/en not_active Expired - Lifetime
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6038821A (en) * | 1983-08-12 | 1985-02-28 | Hitachi Ltd | Pattern forming method |
| JPS61121051A (en) * | 1984-11-16 | 1986-06-09 | Fuji Photo Film Co Ltd | Photoresist material |
| JPS6262521A (en) * | 1985-09-13 | 1987-03-19 | Hitachi Ltd | Pattern forming method |
| JPS62133444A (en) * | 1985-12-04 | 1987-06-16 | Matsushita Electric Ind Co Ltd | Pattern-forming organic material |
| JPS62226148A (en) * | 1986-03-27 | 1987-10-05 | Tokyo Ohka Kogyo Co Ltd | Process for forming pattern |
| JPS63108334A (en) * | 1986-10-27 | 1988-05-13 | Tokyo Ohka Kogyo Co Ltd | Composition for contrast improving |
| JPS63114212A (en) * | 1986-10-31 | 1988-05-19 | Sony Corp | Pattern forming method |
| JPS63287950A (en) * | 1987-05-12 | 1988-11-25 | ヘキスト・アクチエンゲゼルシヤフト | Radiosensitive recording material |
| JPH0455323A (en) * | 1990-06-22 | 1992-02-24 | Dainichiseika Color & Chem Mfg Co Ltd | Blue-green pigment of fine-grained multiple oxide and its production |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08305024A (en) * | 1995-05-08 | 1996-11-22 | Mitsubishi Chem Corp | Coating composition for improvement in performance in lithography and pattern forming method using that coating composition |
| US8080364B2 (en) | 2003-05-09 | 2011-12-20 | Panasonic Corporation | Pattern formation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2578930B2 (en) | 1997-02-05 |
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