JPH0252485A - Manufacture of surface-emission type semiconductor laser - Google Patents
Manufacture of surface-emission type semiconductor laserInfo
- Publication number
- JPH0252485A JPH0252485A JP20520088A JP20520088A JPH0252485A JP H0252485 A JPH0252485 A JP H0252485A JP 20520088 A JP20520088 A JP 20520088A JP 20520088 A JP20520088 A JP 20520088A JP H0252485 A JPH0252485 A JP H0252485A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- conductivity type
- semiconductor laser
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005253 cladding Methods 0.000 claims description 14
- 230000000694 effects Effects 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 2
- 230000004913 activation Effects 0.000 abstract 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、内部電流狭窄構造を有する面発光型半導体レ
ーザーの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a surface emitting semiconductor laser having an internal current confinement structure.
第７図は、内部電流狭窄構造を導入した従来の面発光型
半導体レーザーの構成を模式的に示す断面図である０図
中１はエツチングにより一部が除去されたｐ−ＧａＡｓ
基板であって、基板１には、ρ−Ｇａ ０．６ＡＩ。、
４Ａｓ層２と、選択的メルトバンクにより一部が除去さ
れたｐ−ＧａＡｓ層３及びｎ−（ｒａ（１，６ＡｌＯ，
４Ａｓブロック層４とがこの順に積層されている。ブロ
ック層４には選択的メルトバックにより除去された部分
を含んでｐ−Ｇａ０８６ ＡＩｏ、４ ＡＩクラッド層
５が積層されており、クラッド層５にはｐ−Ｇａ０，９
ＡＩ。、１Ａｓ活性層６． ｎ−Ｇａ００６ ＡＩｏ、
４へＳクラッド層７及びｎ−Ｇａ ｔ３． Ｂ５八１０
．ｌ５Ａ３キャンプ層８がこの順に積層されている。ま
た、前記基板１がエツチング除去され先部分及びこの部
分に対応するキャップ層８上に反射鏡９ａ、９ａが設け
られ、エツチング除去されない部分の基板１及び反射鏡
９ｂを設けた部分以外のキャップ層８上に電極１０ｂ、
１０ｂが設けられている。FIG. 7 is a cross-sectional view schematically showing the structure of a conventional surface-emitting semiconductor laser incorporating an internal current confinement structure.
The substrate 1 is made of ρ-Ga 0.6AI. ,
4As layer 2, p-GaAs layer 3 and n-(ra(1,6AlO,
4As block layer 4 are laminated in this order. A p-Ga086 AIo,4 AI cladding layer 5 is laminated on the block layer 4 including the portion removed by selective meltback, and the cladding layer 5 includes a p-Ga0,9 AI cladding layer 5.
A.I. , 1As active layer6. n-Ga006 AIo,
4 to S cladding layer 7 and n-Ga t3. B5810
．． The 15A3 camp layers 8 are laminated in this order. Also, reflective mirrors 9a, 9a are provided on the portion of the substrate 1 that has been etched away and the cap layer 8 corresponding to this portion, and the portion of the substrate 1 that is not etched and the cap layer other than the portion where the reflective mirror 9b is provided is provided. electrode 10b on 8;
10b is provided.
以上のような方法で製造された面発光型半導体レーザー
は、活性層６から離れた位置で電流狭窄を行う構成であ
るため、活性Ｎ６が２．０〜４．０μ−と比較的厚くな
った場合、活性層６内部において電流拡がりが発生し、
電流の閉じ込めが十分に行われないという問題がある。Since the surface-emitting semiconductor laser manufactured by the method described above has a configuration in which current confinement is performed at a position away from the active layer 6, the active N6 is relatively thick, ranging from 2.0 to 4.0 μ-. In this case, current spreading occurs inside the active layer 6,
There is a problem in that the current is not sufficiently confined.
また、以上のような方法で製造された面発光型半導体レ
ーザーは、活性層６での光共振方向に垂直な方向に対し
て光の閉じ込めが十分に行われていないという問題があ
る。Furthermore, the surface-emitting semiconductor laser manufactured by the method described above has a problem in that light is not sufficiently confined in the direction perpendicular to the optical resonance direction in the active layer 6.
本発明はこのような問題を解決するためになされたもの
であって、電流閉じ込め効果が高く、また光閉じ込め効
果を備えた、内部電流狭窄構造を有する面発光型半導体
レーザーの製造方法の提供を目的とする。The present invention has been made to solve these problems, and it is an object of the present invention to provide a method for manufacturing a surface-emitting semiconductor laser having an internal current confinement structure, which has a high current confinement effect and an optical confinement effect. purpose.
本発明の面発光型半導体レーザーの製造方法は、内部電
流狭窄構造を有する面発光型半導体レーザーの製造方法
において、第１導電型のＧａＡｓ基板上に、第１導電型
のＧａ１−ｘ ＡＩＸ Ａｓクラッド層（×≧０．１）
及び前記ＧａＡｓ基板と逆導電型である第２導電型のＧ
ａＡｓ活性層をこの順に成長させる工程と、前記ＧａＡ
ｓ活性層にメサ部を形成する工程と、前記メサ部を含む
ＧａＡｓ活性層上に、第１導電型のＧａ１−ｙ Ａｎｙ
Ａｓブロック層（ｙ≧０．１）を成長させる工程と、該
Ｇａ１−ＹＡｌｙ Ａｓブロック層をその下のメサ部に
達するまでメルトバック除去する工程と、メルトバンク
除去した前記Ｇａ１−ｙ Ａｌｙ Ａｓブロック層上に
、第２導電型のＧａ１−ｘ Ａｌｘ Ａｓクラッド層及
び第２導電型のＧａ１−ｚＡｌｚ Ａｓキャップ層をこ
の順に成長させる工程とを有することを特徴とする。A method for manufacturing a surface-emitting semiconductor laser of the present invention includes a method for manufacturing a surface-emitting semiconductor laser having an internal current confinement structure, in which a Ga1-x AIX As cladding of a first conductivity type is formed on a GaAs substrate of a first conductivity type. Layer (×≧0.1)
and G of a second conductivity type, which is a conductivity type opposite to that of the GaAs substrate.
A step of growing an aAs active layer in this order, and a step of growing an aAs active layer in this order;
a step of forming a mesa portion in the active layer, and forming a first conductivity type Ga1-y Any on the GaAs active layer including the mesa portion.
a step of growing an As block layer (y≧0.1), a step of removing the Ga1-YAly As block layer by meltback until it reaches the mesa portion below it, and a step of removing the Ga1-YAly As block from which the melt bank has been removed. The method is characterized by comprising a step of growing a second conductivity type Ga1-x Alx As cladding layer and a second conductivity type Ga1-zAlz As cap layer on the layer in this order.
本発明の面発光型半導体レーザーの製造方法は、第１導
電型のＧａＡｓ基板上に、第１導電型のＧａ１−にＡｌ
ｘ Ａｓクラッド層（ｘ≧０．１）及び前記ＧａＡｓ基
板と逆導電型である第２導電型のＧａＡｓ活性層をこの
順に成長させ、前記ＧａＡｓ活性層にメサ部を形成し、
前記メサ部を含む前記ＧａＡｓ活性層上に、第１導電型
のＧａ１−ｙ Ａｌｙ Ａｓブロック層（ｙ≧０．１）
を成長させ、１Ｇａ１−ｙ Ａｌｙ Ａｓブロック層を
その下のメサ部までメルトバック除去し、メルトバック
除去した前記Ｇａ１−ｙ Ａｌｙ Ａｓブロック層上に
、第２導電型のＧａ１−ｘＡｌｘ Ａｓクラッド層及び
第２導電型のＧａ１−ｚ Ａｌｚ Ａｓキャンプ層をこ
の順に成長させる。The method for manufacturing a surface-emitting semiconductor laser of the present invention includes forming an aluminum layer on a first conductivity type Ga1- on a first conductivity type GaAs substrate.
x As cladding layer (x≧0.1) and a second conductivity type GaAs active layer having a conductivity type opposite to that of the GaAs substrate are grown in this order to form a mesa portion in the GaAs active layer;
A first conductivity type Ga1-y AlyAs block layer (y≧0.1) is provided on the GaAs active layer including the mesa portion.
The 1Ga1-y AlyAs block layer is melted back and removed to the mesa portion below it, and a second conductivity type Ga1-xAlx As cladding layer and A Ga1-z Alz As camp layer of the second conductivity type is grown in this order.
以下、本発明をその実施例を示す図面に基づき詳述する
。第１図乃至第６図は本発明の面発光型半導体レーザー
の製造方法の工程を示す模式図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on drawings showing embodiments thereof. 1 to 6 are schematic diagrams showing the steps of the method for manufacturing a surface-emitting semiconductor laser of the present invention.
１回目の成長で、まずｎ−ＧａＡｓ基板１にｎ−Ｇａ
（３，６＾１０．４へＳクラッド層２及びｐ−ＧａＡｓ
活性層１１（膜厚〜３．０μｍ）を順次成長させる（第
１図）０次に、ｐ−ＧａＡｓ活性層１１に５μｍφ、高
さ〜２．０μｍのメサを形成する（第２図（ａ）及び山
））。In the first growth, firstly, n-GaAs substrate 1 is grown with n-GaAs.
(3,6^10.4 S cladding layer 2 and p-GaAs
The active layer 11 (film thickness ~3.0 μm) is sequentially grown (FIG. 1) Next, a mesa with a diameter of 5 μm and a height of ~2.0 μm is formed in the p-GaAs active layer 11 (FIG. 2 (a) ) and mountain)).
２回目の成長で、メサを含むｐ−ＧａＡｓ活性層１１上
に、その周囲と比較してほとんど成長しない（例えば周
囲〜１μｍに対してメサ上部から０．１ μｍ）という
ＬＰＥ法の性質を利用してｎ−Ｇａ０，６Ａ１０．４Ａ
ｓブロック層１２を成長させた後、未飽和メルトによる
メルトバックによってｐ−ＧａＡｓ活性層１１のメサ上
部の薄いｎ−Ｇａ（１，６１１ｔｏ、４ Ａｓブロック
層１２を除去しく第３図及び第４図）、さらに、ｐ−Ｇ
ａ ０．６ ＡＩ ０．４Ａｓクラッド層７及び９−Ｇ
ａ ｏ、 ａｓ＾Ｉｑ、）５Ａｓキャンプ層８を成長さ
せる（第５図）。In the second growth, on the p-GaAs active layer 11 including the mesa, the property of the LPE method is utilized that there is almost no growth compared to the surrounding area (for example, 0.1 μm from the top of the mesa for ~1 μm around the surrounding area). n-Ga0,6A10.4A
After growing the s-block layer 12, the thin n-Ga(1,611to,4As) block layer 12 above the mesa of the p-GaAs active layer 11 is removed by meltback using unsaturated melt as shown in FIGS. 3 and 4. ), furthermore, p-G
a 0.6 AI 0.4As cladding layer 7 and 9-G
ao, as^Iq, )5As camp layer 8 is grown (FIG. 5).
最後に、ｎ−ＧａＡｓ基板１の一部をエツチングにより
ｎ−Ｇａ０，６ Ａｌ Ｏ，４Ａｓクラッド層２に達す
るまで除去し、除去した部分に反射鏡９ａを設け、反射
鏡９ａに対応するｐ−Ｇａ ０．８５八ｉｏ、１ｓ１１
ｓキ一１’７プ層８上に反射１Ｉ９ｂを設け、さらに、
ｎ−ＧａＡｓ基板１のエツチング除去しなかった部分及
びｐ−Ｇａ Ｏ，８５ＡＩ ０．１５Ａｓキャップ層８
上の反射鏡９ｂ以外の部分に電極１０ａ、 １０ａ及び
１０ｂ、 １０ｂを設け（第６図）、面発光型半導体レ
ーザーが完成する。Finally, a part of the n-GaAs substrate 1 is removed by etching until it reaches the n-Ga0,6AlO,4As cladding layer 2, a reflecting mirror 9a is provided in the removed part, and a p- Ga 0.858io, 1s11
A reflective layer 1I9b is provided on the skip layer 8, and further,
The unetched portion of the n-GaAs substrate 1 and the p-GaO, 85AI 0.15As cap layer 8
Electrodes 10a, 10a and 10b, 10b are provided at the portions other than the upper reflecting mirror 9b (FIG. 6), and a surface-emitting semiconductor laser is completed.
なお、前記ｎ−Ｇａ０，６ ＡＩｏ、４ Ａ３ブロック
層１２は、その屈折率（〜３．４）がｐ−ＧａＡｓ活性
層１１の屈折率（〜３．６）よりも小さいため、電流閉
じ込めと同時に光閉じ込め層としても機能する。Note that the n-Ga0,6 AIo,4 A3 block layer 12 has a refractive index (~3.4) smaller than the refractive index (~3.6) of the p-GaAs active layer 11, so it does not cause current confinement. At the same time, it also functions as a light confinement layer.
本発明の面発光型半導体レーザーの製造方法は、２回と
いう少ない結晶成長で、活性層の周囲に電流ブロック層
を設けたことにより電流閉じ込め効果を高めるとともに
、電流ブロック層の屈折率が活性層の屈折率よりも小さ
いために光閉じ込め層としても機能するという優れた効
果を奏する。The method for manufacturing a surface-emitting semiconductor laser of the present invention increases the current confinement effect by providing a current blocking layer around the active layer, with only two crystal growth steps, and the refractive index of the current blocking layer is lower than that of the active layer. Since its refractive index is smaller than that of , it has the excellent effect of also functioning as a light confinement layer.
第１図乃至第６図は本発明の面発光型半導体レーザーの
製造工程を示す模式図、第７図は従来の。
面発光型半導体レーザーの構成を示す模式的断面図であ
る。
１−ｎ−ＧａＡｓ基板 ２ ・＝ｎ−ＧａＯ，６八１ｏ
、４Ａｓへラッド層 ７−ｐ−Ｇａ ｔ３．５ ＡＩ
□、 ４ Ａｓクラッド層８・・・ｐ−Ｇａ ｏ、 ａ
ｓ＾＋０．ｌ５Ｉｌ！ｌキ一？７ブ層９ａ、９ｂ−反射
鏡 １０ａ、１０ｂ −電極 １ｌ−ｐ−ＧａＡｓ活性
層 １２−ｎ−Ｇａ ６．６ＡＩ（１，４Ａｓブロック
層第
図
（ａ）
図
（ｂ）
箪
図
策
図
藁
図
第
図
手続補正ＩＦ（自発）
平成１年２月６日
昭和６３年特許願第２０５２００号
発明の名称
面発光型半導体レーザーの製造方法
補正をする者
事件との関係 特許出願人
所在地 東京都千代田区永田町二丁目５番２号名 称
新技術開発事業団
代表者赤羽信久
所在地 東京都目黒区大岡山２丁目１２番１号名 称
東京工業大学長 日中 郁三所在地 守口市京阪本通
２丁目１８番地名 称 （１８８） 三洋電機株式会
社代表者 井 植 敏1 to 6 are schematic diagrams showing the manufacturing process of the surface-emitting semiconductor laser of the present invention, and FIG. 7 is a diagram of the conventional method. FIG. 1 is a schematic cross-sectional view showing the configuration of a surface-emitting semiconductor laser. 1-n-GaAs substrate 2 ・=n-GaO, 681o
, 4As rad layer 7-p-Ga t3.5 AI
□, 4 As cladding layer 8...p-Ga o, a
s^+0. l5Il! l key one? 7 layers 9a, 9b - reflecting mirrors 10a, 10b - electrodes 1l-p-GaAs active layer 12-n-Ga 6.6AI (1,4As block layer Figure (a) Figure (b) Simple diagram Figure Procedural Amendment IF (Voluntary) February 6, 1999 Patent Application No. 205200 of 1988 Name of the invention Relationship with the case of a person amending the manufacturing method of a surface-emitting semiconductor laser Patent applicant location Chiyoda-ku, Tokyo Nagatacho 2-5-2 Name
New Technology Development Corporation Representative Nobuhisa Akabane Address: 2-12-1 Ookayama, Meguro-ku, Tokyo Name:
President of Tokyo Institute of Technology Ikuzo Naka Address 2-18 Keihan Hondori, Moriguchi City Name (188) Representative of Sanyo Electric Co., Ltd. Satoshi Iue
Claims (1)
の製造方法において、 第１導電型のＧａＡｓ基板上に、第１導電型のＧａ＿１
＿−＿ｘＡｌ＿ｘＡｓクラッド層（ｘ≧０．１）及び前
記ＧａＡｓ基板と逆導電型である第２導電型のＧａＡｓ
活性層をこの順に成長させる工程と、 前記ＧａＡｓ活性層にメサ部を形成する工程と、前記メ
サ部を含むＧａＡｓ活性層上に、第１導電型のＧａ＿１
＿−＿ｙＡｌ＿ｙＡｓブロック層（ｙ≧０．１）を成長
させる工程と、 該Ｇａ＿１＿−＿ｙＡｌ＿ｙＡｓブロック層をその下の
メサ部に達するまでメルトバック除去する工程と、メル
トバック除去した前記Ｇａ＿１＿−＿ｙＡｌ＿ｙＡｓブ
ロック層上に、第２導電型のＧａ＿１＿−＿ｘＡｌ＿ｘ
Ａｓクラッド層及び第２導電型のＧａ＿１＿−＿ｚＡｌ
＿ｚＡｓキャップ層をこの順に成長させる工程と を有することを特徴とする面発光型半導体 レーザーの製造方法。[Claims] 1. In a method for manufacturing a surface-emitting semiconductor laser having an internal current confinement structure, a first conductivity type Ga_1 is formed on a first conductivity type GaAs substrate.
_-_xAl_xAs cladding layer (x≧0.1) and GaAs of a second conductivity type that is a conductivity type opposite to that of the GaAs substrate.
a step of growing an active layer in this order; a step of forming a mesa portion in the GaAs active layer; and a step of growing a first conductivity type Ga_1 on the GaAs active layer including the mesa portion.
a step of growing a _-_yAl_yAs block layer (y≧0.1); a step of melt-back removing the Ga_1_-_yAl_yAs block layer until it reaches the mesa portion below it; and a step of removing the Ga_1_-_yAl_yAs block layer after melt-back removal. On top, second conductivity type Ga_1_-_xAl_x
As cladding layer and second conductivity type Ga_1_-_zAl
_zAs cap layer is grown in this order. A method for manufacturing a surface-emitting semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20520088A JP2719631B2 (en) | 1988-08-17 | 1988-08-17 | Method for manufacturing surface emitting semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20520088A JP2719631B2 (en) | 1988-08-17 | 1988-08-17 | Method for manufacturing surface emitting semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0252485A true JPH0252485A (en) | 1990-02-22 |
| JP2719631B2 JP2719631B2 (en) | 1998-02-25 |
Family
ID=16503062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20520088A Expired - Lifetime JP2719631B2 (en) | 1988-08-17 | 1988-08-17 | Method for manufacturing surface emitting semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2719631B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267781A (en) * | 1991-12-24 | 1993-10-15 | Samsung Electron Co Ltd | Laser diode and method of manufacturing laser diode array |
| US6549553B1 (en) | 1998-02-25 | 2003-04-15 | Nippon Telegraph And Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
| CN100463313C (en) * | 2003-12-22 | 2009-02-18 | 松下电器产业株式会社 | Surface-emitting laser and laser projector |
-
1988
- 1988-08-17 JP JP20520088A patent/JP2719631B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05267781A (en) * | 1991-12-24 | 1993-10-15 | Samsung Electron Co Ltd | Laser diode and method of manufacturing laser diode array |
| US6549553B1 (en) | 1998-02-25 | 2003-04-15 | Nippon Telegraph And Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
| US6846685B2 (en) | 1998-02-25 | 2005-01-25 | Nippon Telegraph And Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
| CN100463313C (en) * | 2003-12-22 | 2009-02-18 | 松下电器产业株式会社 | Surface-emitting laser and laser projector |
| US7643524B2 (en) | 2003-12-22 | 2010-01-05 | Panasonic Corporation | Surface-emitting laser and laser projector |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2719631B2 (en) | 1998-02-25 |
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