JP2719631B2 - Method for manufacturing surface emitting semiconductor laser - Google Patents
Method for manufacturing surface emitting semiconductor laserInfo
- Publication number
- JP2719631B2 JP2719631B2 JP20520088A JP20520088A JP2719631B2 JP 2719631 B2 JP2719631 B2 JP 2719631B2 JP 20520088 A JP20520088 A JP 20520088A JP 20520088 A JP20520088 A JP 20520088A JP 2719631 B2 JP2719631 B2 JP 2719631B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- semiconductor laser
- gaas
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、内部電流狭窄構造を有する面発光型半導体
レーザーの製造方法に関する。The present invention relates to a method for manufacturing a surface emitting semiconductor laser having an internal current confinement structure.
第7図は、内部電流狭窄構造を導入した従来の面発光
型半導体レーザーの構成を模式的に示す断面図である。
図中1はエッチングにより一部が除去されたp−GaAs基
板であって、基板1には、p−Ga0.6Al0.4As層2と、選
択的メルトバックにより一部が除去されたp−GaAs層3
及びn−Ga0.6Al0.4Asブロック層4とがこの順に積層さ
れている。ブロック層4には選択的メルトバックにより
除去された部分を含んでp−Ga0.6Al0.4Asクラッド層が
積層されており、クラッド層5にはp−Ga0.9Al0.1As活
性層6,n−Ga0.6Al0.4Asクラッド層7及びn−Ga0.85Al
0.15Asキャップ層8がこの順に積層されている。また、
前記基板1がエッチング除去された部分及びこの部分に
対応するキャップ層8上に反射鏡9a,9bが設けられ、エ
ッチング除去されない部分の基板1及び反射鏡9bを設け
た部分以外のキャップ層8上に電極10a,10bが設けられ
ている。FIG. 7 is a cross-sectional view schematically showing a configuration of a conventional surface-emitting type semiconductor laser having an internal current confinement structure.
In FIG. 1, reference numeral 1 denotes a p-GaAs substrate partially removed by etching. The substrate 1 has a p-Ga 0.6 Al 0.4 As layer 2 and a p-GaAs partially removed by selective melt back. Layer 3
And an n-Ga 0.6 Al 0.4 As block layer 4 are stacked in this order. A p-Ga 0.6 Al 0.4 As clad layer is laminated on the block layer 4 including a portion removed by selective melt back, and a p-Ga 0.9 Al 0.1 As active layer 6, n- Ga 0.6 Al 0.4 As clad layer 7 and n-Ga 0.85 Al
The 0.15 As cap layers 8 are stacked in this order. Also,
Reflecting mirrors 9a and 9b are provided on the portion where the substrate 1 is etched away and on the cap layer 8 corresponding to this portion, and on the cap layer 8 other than the portion where the substrate 1 and the reflecting mirror 9b are not etched and removed. Are provided with electrodes 10a and 10b.
以上のような方法で製造された面発光型半導体レーザ
ーは、活性層6から離れた位置で電流狭窄を行う構成で
あるため、活性層6が2.0〜4.0μmと比較的厚くなった
場合、活性層6内部において電流拡がりが発生し、電流
の閉じ込めが十分に行われないという問題がある。The surface-emitting type semiconductor laser manufactured by the above-described method has a configuration in which the current is confined at a position away from the active layer 6, and therefore, when the active layer 6 becomes relatively thick to 2.0 to 4.0 μm, There is a problem that current spread occurs in the layer 6 and current is not sufficiently confined.
また、以上のような方法で製造された面発光型半導体
レーザーは、活性層6での光共振方向に垂直な方向に対
して光の閉じ込めが十分に行われていないという問題が
ある。Further, the surface-emitting type semiconductor laser manufactured by the above method has a problem that light is not sufficiently confined in a direction perpendicular to the optical resonance direction in the active layer 6.
本発明はこのような問題を解決するためになされたも
のであって、電流閉じ込め効果が高く、また光閉じ込め
効果を備えた、内部電流狭窄構造を有する面発光型半導
体レーザーの製造方法の提供を目的とする。The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a method for manufacturing a surface emitting semiconductor laser having an internal current confinement structure having a high current confinement effect and having a light confinement effect. Aim.
本発明の面発光型半導体レーザーの製造方法は、内部
電流狭窄構造を有する面発光型半導体レーザーの製造方
法において、第1導電型のGaAs基板上に、第1導電型の
Ga1-xAlxAsクラッド層(x≧0.1)及び前記GaAs基板と
逆導電型である第2導電型のGaAs活性層をこの順に成長
させる工程と、前記GaAs活性層にメサ部を形成する工程
と、前記メサ部を含むGaAs活性層上に、第1導電型のGa
1-yAlyAsブロック層(y≧0.1)を成長させる工程と、
該Ga1-yAlyAsブロック層をその下のメサ部に達するまで
メルトバック除去する工程と、メルトバック除去した前
記Ga1-yAlyAsブロック層上に、第2導電型のGa1-xAlxAs
クラッド層及び第2導電型のGa1-zAlzAsキャップ層をこ
の順に成長させる工程とを有することを特徴とする。The method for manufacturing a surface-emitting type semiconductor laser according to the present invention is the method for manufacturing a surface-emitting type semiconductor laser having an internal current confinement structure, wherein the first conductive type GaAs substrate is formed on a first conductive type GaAs substrate.
Growing a Ga 1-x Al x As cladding layer (x ≧ 0.1) and a GaAs active layer of a second conductivity type opposite to the GaAs substrate in this order; and forming a mesa portion in the GaAs active layer. Forming a first conductivity type Ga on the GaAs active layer including the mesa portion.
Growing a 1-y Al y As block layer (y ≧ 0.1);
Melt-back removing the Ga 1-y Al y As block layer until it reaches the mesa portion thereunder; and forming a second conductive type Ga 1 on the melt-back removed Ga 1-y Al y As block layer. -x Al x As
Growing a cladding layer and a second conductivity type Ga 1-z Al z As cap layer in this order.
本発明の面発光型半導体レーザーの製造方法は、第1
導電型のGaAs基板上に、第1導電型のGa1-xAlxAsクラッ
ド層(x≧0.1)及び前記GaAs基板と逆導電型である第
2導電型のGaAs活性層をこの順に成長させ、前記GaAs活
性層にメサ部を形成し、前記メサ部を含む前記GaAs活性
層上に、第1導電型のGa1-yAlyAsブロック層(y≧0.
1)を成長させ、該Ga1-yAlyAsブロック層をその下のメ
サ部までメルトバック除去し、メルトバック除去した前
記Ga1-yAlyAsブロック層上に、第2導電型のGa1-xAlxAs
クラッド層及び第2導電型のGa1-zAlzAsキャップ層をこ
の順に成長させる。The method for manufacturing a surface-emitting type semiconductor laser of the present invention comprises:
On a conductive type GaAs substrate, a first conductive type Ga 1-x Al x As cladding layer (x ≧ 0.1) and a second conductive type GaAs active layer having a reverse conductive type to the GaAs substrate are grown in this order. Forming a mesa portion in the GaAs active layer, and forming a first conductivity type Ga 1-y Al y As block layer (y ≧ 0. 0) on the GaAs active layer including the mesa portion.
1) is grown, the Ga 1-y Al y As block layer is melt-back removed to the mesa portion thereunder, and the second conductivity type of the second conductivity type is formed on the melt back-removed Ga 1-y Al y As block layer. Ga 1-x Al x As
A cladding layer and a second conductivity type Ga 1-z Al z As cap layer are grown in this order.
以下、本発明をその実施例を示す図面に基づき詳述す
る。第1図乃至第6図は本発明の面発光型半導体レーザ
ーの製造方法の工程を示す模式図である。Hereinafter, the present invention will be described in detail with reference to the drawings showing the embodiments. 1 to 6 are schematic views showing steps of a method for manufacturing a surface emitting semiconductor laser according to the present invention.
1回目の成長で、まずn−GaAs基板1にn−Ga0.6Al
0.4Asクラッド層2及びp−GaAs活性層11(膜厚〜3.0μ
m)を順次成長させる(第1図)。次に、p−GaAs活性
層11に5μmφ,高さ〜2.0μmのメサを形成する(第
2図(a)及び(b))。In the first growth, first, an n-Ga 0.6 Al
0.4 As cladding layer 2 and p-GaAs active layer 11 (thickness ~ 3.0μ)
m) are sequentially grown (FIG. 1). Next, a mesa of 5 μmφ and a height of 2.0 μm is formed on the p-GaAs active layer 11 (FIGS. 2A and 2B).
2回目の成長で、メサを含むp−GaAs活性層11上に、
その周囲と比較してほとんど成長しない(例えば周囲〜
1μmに対してメサ上部から0.1μm)というLPE法の性
質を利用してn−Ga0.6Al0.4Asブロック層12を成長させ
た後、未飽和メルトによるメルトバックによってp−Ga
As活性層11のメサ上部の薄いn−Ga0.6Al0.4Asブロック
層12を除去し(第3図及び第4図)、さらに、p−Ga
0.6Al0.4Asクラッド層7及びp−Ga0.85Al0.15Asキャッ
プ層8を成長させる(第5図)。In the second growth, on the p-GaAs active layer 11 including the mesa,
Hardly grows compared to its surroundings (eg around ~
After growing the n-Ga 0.6 Al 0.4 As blocking layer 12 by utilizing the property of the LPE process of the mesa 0.1 [mu] m) with respect to 1 [mu] m, p-Ga by melt-back by the unsaturated melt
Removing the mesa upper thin n-Ga 0.6 Al 0.4 As blocking layer 12 As active layer 11 (FIG. 3 and FIG. 4), further, p-Ga
A 0.6 Al 0.4 As clad layer 7 and a p-Ga 0.85 Al 0.15 As cap layer 8 are grown (FIG. 5).
最後に、n−GaAs基板1の一部をエッチングによりn
−Ga0.6Al0.4Asクラッド層2に達するまで除去し、除去
した部分に反射鏡9aを設け、反射鏡9aに対応するp−Ga
0.85Al0.15Asキャップ層8上に反射鏡9bを設け、さら
に、n−GaAs基板1のエッチング除去しなかった部分及
びp−Ga0.85Al0.15Asキャップ層8上に反射鏡9b以外の
部分に電極10a,10a及び10b,10bを設け(第6図)、面発
光型半導体レーザーが完成する。Finally, a part of the n-GaAs substrate 1 is etched to
-Ga 0.6 Al 0.4 As removed until the cladding layer 2 is reached, a reflector 9a is provided in the removed portion, and p-Ga corresponding to the reflector 9a is removed.
A reflecting mirror 9b is provided on the 0.85 Al 0.15 As cap layer 8, and electrodes are provided on a portion of the n-GaAs substrate 1 that has not been removed by etching and on the p-Ga 0.85 Al 0.15 As cap layer 8 other than the reflecting mirror 9b. 10a, 10a and 10b, 10b are provided (FIG. 6), and the surface-emitting type semiconductor laser is completed.
なお、前記n−Ga0.6Al0.4Asブロック層12は、その屈
折率(〜3.4)がp−GaAs活性層11の屈折率(〜3.6)よ
りも小さいため、電流閉じ込めと同時に光閉じ込め層と
しても機能する。Incidentally, the n-Ga 0.6 Al 0.4 As blocking layer 12, since its refractive index (~3.4) is smaller than the refractive index of the p-GaAs active layer 11 (to 3.6), as a light confinement layer at the same time as the current confinement Function.
本発明の面発光型半導体レーザーの製造方法は、2回
という少ない結晶成長で、活性層の周囲に電流ブロック
層を設けたことにより電流閉じ込め効果を高めるととも
に、電流ブロック層の屈折率が活性層の屈折率よりも小
さいために光閉じ込め層としても機能するという優れた
効果を奏する。According to the method of manufacturing a surface emitting semiconductor laser of the present invention, the current confinement effect is enhanced by providing a current blocking layer around the active layer with crystal growth as small as twice, and the refractive index of the current blocking layer is reduced. Since the refractive index is smaller than the refractive index, an excellent effect of functioning as a light confinement layer can be obtained.
第1図乃至第6図は本発明の面発光型半導体レーザーの
製造工程を示す模式図、第7図は従来の面発光型半導体
レーザーの構成を示す模式的断面図である。 1……n−GaAs基板、2……n−Ga0.6Al0.4Asクラッド
層、7……p−Ga0.6Al0.4Asクラッド層、8……p−Ga
0.85Al0.15Asキャップ層、9a,9b……反射鏡、10a,10b…
…電極、11……p−GaAs活性層、12……n−Ga0.6Al0.4
Asブロック層1 to 6 are schematic views showing a manufacturing process of the surface emitting semiconductor laser of the present invention, and FIG. 7 is a schematic sectional view showing a configuration of a conventional surface emitting semiconductor laser. 1 ...... n-GaAs substrate, 2 ...... n-Ga 0.6 Al 0.4 As cladding layer, 7 ...... p-Ga 0.6 Al 0.4 As cladding layer, 8 ...... p-Ga
0.85 Al 0.15 As cap layer, 9a, 9b …… Reflector, 10a, 10b…
... electrode, 11 ...... p-GaAs active layer, 12 ...... n-Ga 0.6 Al 0.4
As block layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 茨木 晃 大阪府守口市京阪本通2丁目18番地 三 洋電機株式会社内 (56)参考文献 特開 昭63−157489(JP,A) 特開 昭60−231378(JP,A) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Akira Ibaraki 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-63-157489 (JP, A) JP-A Sho 60-231378 (JP, A)
Claims (1)
レーザーの製造方法において、 第1導電型のGaAs基板上に、第1導電型のGa1-xAlxAsク
ラッド層(x≧0.1)及び前記GaAs基板と逆導電型であ
る第2導電型のGaAs活性層をこの順に成長させる工程
と、 前記GaAs活性層にメサ部を形成する工程と、前記メサ部
を含むGaAs活性層上に、第1導電型のGa1-yAlyAsブロッ
ク層(y≧0.1)を成長させる工程と、 該Ga1-yAlyAsブロック層をその下のメサ部に達するまで
メルトバック除去する工程と、 メルトバック除去した前記Ga1-yAlyAsブロック層上に、
第2導電型のGa1-xAlxAsクラッド層及び第2導電型のGa
1-zAlzAsキャップ層をこの順に成長させる工程と を有することを特徴とする面発光型半導体レーザーの製
造方法。1. A method of manufacturing a surface-emitting type semiconductor laser having an internal current confinement structure, comprising: a first conductivity type Ga 1-x Al x As cladding layer (x ≧ 0.1) on a first conductivity type GaAs substrate; Growing a GaAs active layer of a second conductivity type, which is of the opposite conductivity type to the GaAs substrate, in this order; forming a mesa portion in the GaAs active layer; and forming a mesa portion on the GaAs active layer including the mesa portion. Growing a Ga 1-y Al y As block layer of the first conductivity type (y ≧ 0.1); and removing a melt back of the Ga 1-y Al y As block layer until reaching the mesa portion thereunder. On the Ga 1-y Al y As block layer removed by melt back,
The second conductivity type Ga 1-x Al x As cladding layer and the second conductivity type Ga
Growing a 1-z Al z As cap layer in this order.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20520088A JP2719631B2 (en) | 1988-08-17 | 1988-08-17 | Method for manufacturing surface emitting semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20520088A JP2719631B2 (en) | 1988-08-17 | 1988-08-17 | Method for manufacturing surface emitting semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0252485A JPH0252485A (en) | 1990-02-22 |
JP2719631B2 true JP2719631B2 (en) | 1998-02-25 |
Family
ID=16503062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20520088A Expired - Lifetime JP2719631B2 (en) | 1988-08-17 | 1988-08-17 | Method for manufacturing surface emitting semiconductor laser |
Country Status (1)
Country | Link |
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JP (1) | JP2719631B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5362675A (en) * | 1991-12-24 | 1994-11-08 | Samsung Electronics Co., Ltd. | Manufacturing method of laser diode and laser diode array |
DE69931097T2 (en) | 1998-02-25 | 2006-10-19 | Nippon Telegraph And Telephone Corp. | Surface emitting semiconductor laser with vertical resonator |
EP1710877B1 (en) * | 2003-12-22 | 2010-12-01 | Panasonic Corporation | Surface-emitting laser and laser projector |
-
1988
- 1988-08-17 JP JP20520088A patent/JP2719631B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0252485A (en) | 1990-02-22 |
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