JPH0252330B2 - - Google Patents
Info
- Publication number
- JPH0252330B2 JPH0252330B2 JP58124280A JP12428083A JPH0252330B2 JP H0252330 B2 JPH0252330 B2 JP H0252330B2 JP 58124280 A JP58124280 A JP 58124280A JP 12428083 A JP12428083 A JP 12428083A JP H0252330 B2 JPH0252330 B2 JP H0252330B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- polymer film
- light
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 229920000620 organic polymer Polymers 0.000 claims description 12
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052798 chalcogen Inorganic materials 0.000 claims description 6
- 150000001787 chalcogens Chemical class 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229920000573 polyethylene Polymers 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000020 Nitrocellulose Substances 0.000 description 2
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00451—Recording involving ablation of the recording layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/246—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
- G11B7/248—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes porphines; azaporphines, e.g. phthalocyanines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
- G11B7/249—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
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ã¢ãªãŒãã€ã¹ã¯ã«é¢ãããDETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical memory disk used in an optical information processing device.
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åžããŠè²Œãåãæ§é ã«ããŠããã As shown in Fig. 1, this optical memory disk is made by focusing and irradiating laser light with a lens from the disk-shaped transparent substrate 1 side, locally melting and sublimating the recording layer 2, and forming a diameter of about 1 ÎŒm. In this method, small holes, so-called recording pits, are formed, and information is reproduced by changing the reflectance depending on the presence or absence of the recording pits.
In this example, two disc-shaped transparent substrates 1 each having a recording layer 2 attached thereto are prepared, the recording layers 2 are made to face each other, and spacers 3 are provided at the inner and outer peripheral ends of the transparent substrates 1. , 4 are inserted to provide a hollow region 5, and an adhesive 6 is applied between the transparent substrate top 1 and the spacers 3 and 4 to form a bonded structure.
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ããã With this structure, the recording layer 2 is sealed and sealed from the outside air, preventing deterioration due to the influence of moisture, etc.
In addition, in contrast to a recording medium with a recording layer 2 exposed to the outside air, this example in which recording and reproduction is performed from the side of the transparent substrate 1 is designed to reduce the effects of dirt, dust, scratches, etc. that adhere to the surface of the recording layer 2 by 1,000,000 minutes. As a result, the stability of the recording layer 2 and the reduction of the error rate during recording and reproduction are reasonably satisfied.
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ç¹ããã€ãã However, such optical memory disks have the following drawbacks regarding recording sensitivity, stability, and signal contrast. That is, regarding recording sensitivity, during recording, 20 to 30% of the amount of laser light passes through the recording layer 2 and is not effectively used for forming recording pits. Since it is directly adhered to the substrate, it has the disadvantage that it is easily affected by scratches and irregularities of several micrometers on the substrate surface.In addition, the relationship between recording sensitivity and stability and signal contrast is When the film thickness of recording layer 2 is made thinner to improve sensitivity, (R 0 - R 1 )/(R 0 + R 1 ) (where R 0 and R 1 are obtained from the unrecorded area and the recorded area, respectively). The signal contrast expressed by If the thickness of the layer 2 is increased, the recording sensitivity decreases, which are contradictory properties, so it has been impossible to achieve good conditions for both. Furthermore, during reproduction, noise is generated due to disturbance in the contour shape of the recording pit, which has the disadvantage of lowering the S/N ratio.
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æ§æãããã The purpose of the present invention was to eliminate the above-mentioned drawbacks, and in order to achieve that purpose, the present invention provides a method for disposing metal phthalocyanine, chalcogen elements, Bi, In, Pb, Cd, etc. on a transparent substrate. Sn, As
Contains 2 to 20 atomic% of at least one selected from the following in a dispersed state, and has a particle size of 1500 to 3000 Ã
a first layer consisting of an organic polymer film having a film thickness of
Contains 10 to 80 atomic% of at least one selected from Ag, Al, Au, Pt, Cu, Cr, Ni, Rh, and chalcogen elements in a dispersed state, and 500 to 80 atomic%
The second layer consists of an organic polymer film with a thickness of 2000 Ã
.
The optical memory disk is characterized in that a convex portion is formed on the second layer by sequentially depositing the second layer and irradiating the second layer with laser light from the transparent substrate side.
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ã€ãŠããã Fig. 2 shows the main parts of the optical memory disk according to the present invention, and a and b in the figure show the state before and after irradiation with laser light, respectively, and the overall structure is in the shape of a disk as shown in the figure. Two transparent substrates 1 are prepared, and as shown in FIG. 1, each layer is made to face each other and joined through a spacer to form a shielding and sealing structure.
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åžåæ§ãæããã On the disc-shaped transparent substrate 1, a first layer 7 made of an organic polymer film containing metal phthalocyanine, etc.;
Second layer 8 consisting of an organic polymer film containing Ag, etc.
and are applied sequentially. The thickness of the first layer 7 is selected to be 1500 to 3000 Ã
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By selecting 20 atomic %, the first layer 7 has light absorption properties for the wavelength of the laser beam used.
In addition, the second layer 8 is designed to have a film thickness of 500 to 2000 Ã
and a content of dispersed Ag or the like to be 10 to 80 atomic%, so that the second layer 8 mainly reflects the laser beam. properties and secondarily absorbability.
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å ±èšé²ãšããŠå©çšãããã The laser beam is irradiated from the disk-shaped transparent substrate 1 side, and since the first layer 7 has a light-absorbing substance dispersed therein, about 10% of the light is absorbed in the first layer 7 and converted into heat. converted. This heat generates gas from the organic polymer film of the first layer 7 and releases it to the next second layer 8 side. Then, the released gas is transferred to the second layer 8
is lifted to form a convex portion 9 as shown in FIG. 2b. When forming this convex portion 9, the second layer 8
contains substances such as Ag that are dispersed inside it and secondarily absorbs the laser light that passes through the first layer and generates heat, which softens the organic polymer film. This reduces the force applied to lift the second layer 8 and promotes the formation of convex portions.
In addition, the inclusions such as Ag, which are mainly light-reflective, contained in the second layer reflect much of the laser light that has passed through the first layer and send it back to the inclusions, such as metal phthalocyanine, in the first layer. Therefore, the laser beam can be effectively absorbed by the contents of the first layer. Furthermore, since the first layer 7 is composed of an organic polymer film as a base material, it is possible to prevent thermal diffusion when substances such as metal phthalocyanine contained in each layer absorb laser light and generate heat. . By forming convex portions corresponding to conventional recording pits in this manner, the recording sensitivity of the optical memory disk can be improved. Such convex portions 9 of the second layer 8 are similar to conventional recording pits,
It is used as an information record.
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ããåå°çã§ãã€ãŠãããã In order to increase the signal contrast when reproducing information, in the present invention, the film thickness of the first layer 7 is selected so that the reflectance due to the light interference effect is maximized in the unrecorded state, and the thickness of the second layer 8 is The light is reflected mainly by dispersing a substance such as Ag that is reflective to laser light. After recording, the distance between the second layer 8 and the transparent substrate 1 increases by the amount of deformation of the convex portion 9 shown in FIG. The reflectance shifts from its maximum value and decreases. Furthermore, by forming the convex portions 9 on the second layer 8, the incident laser beam is scattered at the convex portions 9 as shown in FIG. 3, and the amount of returning light is reduced, so that the reflectance after recording is is considerably lower than the reflectance at the time of unrecording, and the signal contrast can be increased as a whole, and as a result, the S/N ratio during reproduction can also be improved. As mentioned above, the optical memory disk of the present invention can record,
It has an excellent effect during regeneration, but another effect is that since the base materials of the first layer 7 and the second layer 8 are both composed of organic polymer films, their mutual adhesion is good and the formation of convex portions is prevented. At this time, it is possible to prevent cracks from forming at the interface, and since the contained substances are isolated from the outside air, deterioration due to oxidation etc. can be prevented. In this way, deterioration of the recording layer can also be prevented. Note that the maximum reflectance may be as large as possible.
以äžãæ¬çºæã®å ·äœçå®æœäŸã説æããã Hereinafter, specific examples of the present invention will be described.
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ã¹ã䜿çšããã As the disc-shaped transparent substrate 1, soda lime glass with a thickness of 1.2 mm was used, which had undergone ultra-precision processing, polishing, and cleaning steps.
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It is desirable that the range is 80~
It is preferable to set it as 150W. Gas pressure is also related to the instability of the discharge, and if the gas pressure is too high or too low, the discharge will become unstable, so it is recommended to form a film at an appropriate gas pressure in the range of 1 to 10 -3 Torr. is desirable.
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ã«å¯ŸããŠåžåæ§ãæããããã«ãªãã The content of copper phthalocyanine in the ethylene polymer film (first layer 7) is about 5 atomic%. This increase in content leads to an increase in the light absorption rate of the first layer 7 and improves recording sensitivity. but,
If this content is increased excessively, small holes will be formed in the first layer 7 due to laser beam irradiation, making it impossible to perform recording using the convex portions 9, or increasing the reflectance of the first layer 7. , leading to deterioration of signal contrast. Conversely, if this content is too small, the sensitivity will be insufficient. Therefore, the content of copper phthalocyanine is preferably within the range of 2 to 20 atomic%.
An ethylene polymer film containing 5 atomic% copper phthalocyanine (first film) was placed on a soda lime glass substrate.
At the stage when layer 7) was applied, the reflectance determined from the soda lime glass substrate side was about 9%.
The film thickness of the first layer 7 is determined so that the light interference effect is near the maximum in order to increase the signal contrast, and is approximately 2400 Ã
in this example. The preferred range of this film thickness is 1500 to 3000 Ã
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becomes absorbent to laser light.
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æããããã«ãªãã Next, an ethylene polymer film (second layer 8) containing Ag (silver) was deposited on the first layer 7 by the same film forming method as described above. Ag was dispersed in the ethylene polymer film by vapor deposition, and the Ag content was approximately 60 atomic%. The thickness of this second layer 8 was approximately 1000 Ã
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The Ag particles promote reflection and some absorption of light, and the reflected light enters the first layer 7 again and is effectively used, contributing to improving the recording sensitivity and increasing the reflectance of the second layer 8. By increasing the signal contrast, the signal contrast can be increased. Further, some of the absorbed light is converted into heat, which promotes softening of the second layer 8 and facilitates the formation of the recording convex portions 9. Since the Ag content affects light reflection and absorption, it is closely related to recording sensitivity and signal contrast, and the preferred content is 10 to 80 atomic %. The reason for this is that when the amount is less than 10 atomic percent, the signal contrast decreases, and when it is more than 80 atomic percent, the signal contrast is improved, but the formation of the convex portion 9 is inhibited. The thickness of the second layer 8 is related to the formation of the convex portions 9; if it is too thin, the convex portions 9 will not form and small holes will be formed; on the other hand, if it is too thick, the convex portions 9 will be formed. Therefore, the preferred film thickness is 500 to 2000 Ã
. By selecting the Ag content and the thickness of the ethylene polymer film in this manner, the second layer 8 becomes primarily reflective and secondarily absorbent with respect to the laser beam.
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ïŒïŒ®æ¯ãè¯å¥œã«ããããšãã§ããã A semiconductor laser beam with a wavelength of 830 nm was used for recording and reproduction, and was focused by an objective lens to form a laser spot with a diameter of 1.6 ÎŒm on the surface of the recording medium, with a power of 6 mW during recording and 0.6 mW during reproduction. In that case, the recording sensitivity for forming the convex portions 9 depends on the thickness of the first layer 7 and the content of copper phthalocyanine dispersed in the first layer, and also on the thickness of the second layer 8. , varies depending on the Ag content dispersed in the second layer, but in this example, by making the selections described above, a laser pulse width of 30 ns was obtained, compared to approximately 50 ns when copper phthalocyanine was not included. It was confirmed that it was high. Furthermore, in this example, the reflectances during unrecording and recording were approximately 48% and 19%, respectively, and the signal contrast was a good value of 0.43. Furthermore, in this example, the time required for the reflectance to decrease by 30% from the initial value in a humidity test in an environment of 60°C and 90% is as follows: It was confirmed that it has excellent long-term stability as it is about 60 times longer. In the conventional comparative example, an increase in the noise level was observed due to disturbance at the edge of the recording hole, but in this example, since the convex portion 9 is continuously curved, there is a difference between the unrecorded part and the recorded part. Each noise level hardly increases,
The noise level due to the mutual difference is not detected,
It was possible to improve the S/N ratio.
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ãŠãããã The present invention is not limited to the materials listed in the above embodiments, but materials such as quartz glass, vinyl chloride resin, vinyl acetate resin, acrylic resin, methacrylic resin, polyester resin, nitrocellulose, polystyrene resin, polypropylene resin, polyamide can be used as the transparent substrate. Resin, polycarbonate resin, epoxy resin, etc. may also be used. Next, as the first layer 7 having light absorption and light interference properties, metal phthalocyanine such as lead phthalocyanine, chalcogen elements such as tellurium (Te), selenium (Se), and sulfur (S), or bismuth (Bi), indium (In), lead (Pb),
Cadmium (Cd), arsenic (As), tin (Sn) alone, their compounds, or their oxides are incorporated into olefin compounds other than ethylene polymers, benzenes, polyesters, polystyrene, acrylic polymers, cellulose acetate, Organic polymer films such as cellulose nitrate, brominated polyhydroxystyrene, chlorinated rubber, SiO, and SiO 2 may also be used. Next, as the second layer 8, aluminum (Al), gold (Au), platinum (Pt), copper (Cu), chromium (Cr), nickel (Ni), rhodium (Rh), chalcogen elements, and An organic polymer film similar to the first layer 7 containing a compound or an oxide thereof may be used. In addition, although vacuum evaporation and glow discharge were mentioned as film forming methods in the examples, depending on the material used, direct current sputtering, high frequency sputtering,
reactive sputtering, ion plating,
Ion cluster, plating, CVD, codeposition, vapor phase growth, casting, doctor blade, magnetron sputtering or spraying, roller coating, dipping. A coating method such as spinning may also be used.
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ããããšãã§ããã In addition, in the example, a semiconductor laser with a wavelength of 830 nm was used as a laser light source, but the wavelength used was 830 nm.
In this case, the thickness of each layer and the blending ratio of the light-absorbing substance can be determined functionally depending on the wavelength.
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ãããšãã§ããã As described above, according to the present invention, it is possible to prevent deterioration of the recording layer, improve the recording sensitivity, improve the signal contrast, and further improve the S/N ratio during reproduction.
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第ïŒå±€ãïŒâŠâŠåžç¶éšã
Figure 1 is a cross-sectional view of a conventional optical memory disk.
FIG. 2 is a sectional view of a main part of the optical memory disk according to the present invention, and FIG. 3 is a sectional view showing scattering of incident laser light. 1... Disc-shaped transparent substrate, 7... First layer, 8...
Second layer, 9... Convex portion.
Claims (1)
ã²ã³å çŽ ãBiãInãPbãCdãSnãAsã®ãã¡ãã
éžãã å°ãªããšãäžã€ãåæ£ããç¶æ ã§ïŒã
20atomicïŒ å«æãããã€ã1500ã3000â«ã®èå
ãæããææ©ç©éåèããæã第ïŒå±€ãšãAgã
AlãAuãPtãCuãCrãNiãRhãã«ã«ã³ã²ã³å
çŽ ã®ãã¡ããéžãã å°ãªããšãäžã€ãåæ£ããç¶
æ ã§10ã80atomicïŒ å«æãããã€ã500ã2000â«
ã®èåãæããææ©ç©éåèããæã第ïŒå±€ãšã
é 次被çããã¬ãŒã¶å ãåèšéæåºæ¿åŽããç §å°
ããããšã«ãããåèšç¬¬ïŒå±€ã«åžç¶éšã圢æãã
ããšãç¹åŸŽãšããå ã¡ã¢ãªãŒãã€ã¹ã¯ã1. On a transparent substrate, at least one selected from metal phthalocyanine, chalcogen element, Bi, In, Pb, Cd, Sn, and As is dispersed.
A first layer consisting of an organic polymer film containing 20 atomic% and having a film thickness of 1500 to 3000 Ã , Ag,
Contains 10 to 80 atomic% of at least one selected from Al, Au, Pt, Cu, Cr, Ni, Rh, and chalcogen elements in a dispersed state, and has a diameter of 500 to 2000 Ã
A second layer made of an organic polymer film having a film thickness of memory disk.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58124280A JPS6015843A (en) | 1983-07-08 | 1983-07-08 | Optical memory disc |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58124280A JPS6015843A (en) | 1983-07-08 | 1983-07-08 | Optical memory disc |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6015843A JPS6015843A (en) | 1985-01-26 |
JPH0252330B2 true JPH0252330B2 (en) | 1990-11-13 |
Family
ID=14881426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58124280A Granted JPS6015843A (en) | 1983-07-08 | 1983-07-08 | Optical memory disc |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6015843A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2823209B2 (en) * | 1988-10-31 | 1998-11-11 | æ¥ç«ãã¯ã»ã«æ ªåŒäŒç€Ÿ | Optical information recording medium and method of manufacturing the same |
JP2998845B2 (en) * | 1989-11-20 | 2000-01-17 | æ¥ç«ãã¯ã»ã«æ ªåŒäŒç€Ÿ | Optical information recording medium |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111134A (en) * | 1980-01-23 | 1981-09-02 | Thomson Csf | Thermal and optical information writing process and information holder therefor |
JPS5871194A (en) * | 1981-10-23 | 1983-04-27 | Toshiba Corp | Optical information recording medium |
JPS58158052A (en) * | 1982-03-15 | 1983-09-20 | Toshiba Corp | Optical information recording medium |
-
1983
- 1983-07-08 JP JP58124280A patent/JPS6015843A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111134A (en) * | 1980-01-23 | 1981-09-02 | Thomson Csf | Thermal and optical information writing process and information holder therefor |
JPS5871194A (en) * | 1981-10-23 | 1983-04-27 | Toshiba Corp | Optical information recording medium |
JPS58158052A (en) * | 1982-03-15 | 1983-09-20 | Toshiba Corp | Optical information recording medium |
Also Published As
Publication number | Publication date |
---|---|
JPS6015843A (en) | 1985-01-26 |
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