JPH0249732Y2 - - Google Patents
Info
- Publication number
- JPH0249732Y2 JPH0249732Y2 JP1982069197U JP6919782U JPH0249732Y2 JP H0249732 Y2 JPH0249732 Y2 JP H0249732Y2 JP 1982069197 U JP1982069197 U JP 1982069197U JP 6919782 U JP6919782 U JP 6919782U JP H0249732 Y2 JPH0249732 Y2 JP H0249732Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- diode
- pellets
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000008188 pellet Substances 0.000 claims description 33
- 238000002161 passivation Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 235000012239 silicon dioxide Nutrition 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 19
- 239000011521 glass Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000005394 sealing glass Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982069197U JPS58173249U (ja) | 1982-05-12 | 1982-05-12 | 高圧ダイオ−ド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982069197U JPS58173249U (ja) | 1982-05-12 | 1982-05-12 | 高圧ダイオ−ド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58173249U JPS58173249U (ja) | 1983-11-19 |
| JPH0249732Y2 true JPH0249732Y2 (US07118763-20061010-C00002.png) | 1990-12-27 |
Family
ID=30078934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982069197U Granted JPS58173249U (ja) | 1982-05-12 | 1982-05-12 | 高圧ダイオ−ド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58173249U (US07118763-20061010-C00002.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5557571B2 (ja) * | 2010-03-29 | 2014-07-23 | 新電元工業株式会社 | ダイオードモジュール |
| US8530902B2 (en) * | 2011-10-26 | 2013-09-10 | General Electric Company | System for transient voltage suppressors |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4995585A (US07118763-20061010-C00002.png) * | 1973-01-12 | 1974-09-10 | ||
| JPS51134579A (en) * | 1975-05-16 | 1976-11-22 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5227033A (en) * | 1975-08-26 | 1977-03-01 | Katayama Chemical Works Co | Anticorrosive for condensed water in circulation system |
| JPS5327370A (en) * | 1976-08-24 | 1978-03-14 | Rca Corp | Semiconductor device |
-
1982
- 1982-05-12 JP JP1982069197U patent/JPS58173249U/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4995585A (US07118763-20061010-C00002.png) * | 1973-01-12 | 1974-09-10 | ||
| JPS51134579A (en) * | 1975-05-16 | 1976-11-22 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5227033A (en) * | 1975-08-26 | 1977-03-01 | Katayama Chemical Works Co | Anticorrosive for condensed water in circulation system |
| JPS5327370A (en) * | 1976-08-24 | 1978-03-14 | Rca Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58173249U (ja) | 1983-11-19 |
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