JPH0249020B2 - - Google Patents

Info

Publication number
JPH0249020B2
JPH0249020B2 JP56100525A JP10052581A JPH0249020B2 JP H0249020 B2 JPH0249020 B2 JP H0249020B2 JP 56100525 A JP56100525 A JP 56100525A JP 10052581 A JP10052581 A JP 10052581A JP H0249020 B2 JPH0249020 B2 JP H0249020B2
Authority
JP
Japan
Prior art keywords
plane
semiconductor substrate
impurity ions
substrate
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56100525A
Other languages
English (en)
Japanese (ja)
Other versions
JPS583243A (ja
Inventor
Yoshinobu Monma
Toshihiko Fukuyama
Kengo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56100525A priority Critical patent/JPS583243A/ja
Publication of JPS583243A publication Critical patent/JPS583243A/ja
Publication of JPH0249020B2 publication Critical patent/JPH0249020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/041—
    • H10W10/40—

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
JP56100525A 1981-06-30 1981-06-30 半導体装置の製造方法 Granted JPS583243A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56100525A JPS583243A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56100525A JPS583243A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS583243A JPS583243A (ja) 1983-01-10
JPH0249020B2 true JPH0249020B2 (index.php) 1990-10-26

Family

ID=14276369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56100525A Granted JPS583243A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS583243A (index.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547954B1 (fr) * 1983-06-21 1985-10-25 Efcis Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice
JP4929610B2 (ja) * 2005-04-07 2012-05-09 富士電機株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5366385A (en) * 1976-11-26 1978-06-13 Toshiba Corp Semiconductor intergrating circuit
JPS54121081A (en) * 1978-03-13 1979-09-19 Nec Corp Integrated circuit device

Also Published As

Publication number Publication date
JPS583243A (ja) 1983-01-10

Similar Documents

Publication Publication Date Title
US3955269A (en) Fabricating high performance integrated bipolar and complementary field effect transistors
US4484388A (en) Method for manufacturing semiconductor Bi-CMOS device
US6900519B2 (en) Diffused extrinsic base and method for fabrication
US4375999A (en) Method of manufacturing a semiconductor device
KR100227766B1 (ko) 반도체 장치 및 그 제조 방법
US5344785A (en) Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate
US4891328A (en) Method of manufacturing field effect transistors and lateral bipolar transistors on the same substrate
JPH05347383A (ja) 集積回路の製法
JPH0677421A (ja) トランジスタの製法
JPH04266047A (ja) 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置
US4016596A (en) High performance integrated bipolar and complementary field effect transistors
EP0418670B1 (en) Process for fabricating high performance BiMOS circuits
US5480816A (en) Method of fabricating a bipolar transistor having a link base
US4979010A (en) VLSI self-aligned bipolar transistor
JPH0799259A (ja) 縦型バイポーラトランジスタを有するＢｉ−ＣＭＯＳ ＳＯＩ構造及びその製造方法
US5104816A (en) Polysilicon self-aligned bipolar device including trench isolation and process of manufacturing same
US4799099A (en) Bipolar transistor in isolation well with angled corners
JPH022156A (ja) 集積回路の製法
US4497665A (en) Method for manufacturing semiconductor device
US4409609A (en) Semiconductor device and method of manufacturing the same
EP0231740A2 (en) A polysilicon self-aligned bipolar device and process of manufacturing same
JPH0249020B2 (index.php)
EP0253538B1 (en) A vlsi self-aligned bipolar transistor
JPH0465528B2 (index.php)
JPS632143B2 (index.php)