JPH0249011A - 高エネルギー線加工用レジスト - Google Patents

高エネルギー線加工用レジスト

Info

Publication number
JPH0249011A
JPH0249011A JP63200540A JP20054088A JPH0249011A JP H0249011 A JPH0249011 A JP H0249011A JP 63200540 A JP63200540 A JP 63200540A JP 20054088 A JP20054088 A JP 20054088A JP H0249011 A JPH0249011 A JP H0249011A
Authority
JP
Japan
Prior art keywords
vinyl monomer
resist
copolymer
acid residue
mol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63200540A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571605B2 (cg-RX-API-DMAC7.html
Inventor
Hideo Ochi
英夫 越智
Tomoyuki Kitaori
北折　智之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Somar Corp
Original Assignee
Somar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Somar Corp filed Critical Somar Corp
Priority to JP63200540A priority Critical patent/JPH0249011A/ja
Priority to US07/391,035 priority patent/US5015558A/en
Priority to DE68915642T priority patent/DE68915642T2/de
Priority to EP89308132A priority patent/EP0354789B1/en
Priority to KR1019890011471A priority patent/KR920008724B1/ko
Publication of JPH0249011A publication Critical patent/JPH0249011A/ja
Publication of JPH0571605B2 publication Critical patent/JPH0571605B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP63200540A 1988-08-11 1988-08-11 高エネルギー線加工用レジスト Granted JPH0249011A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP63200540A JPH0249011A (ja) 1988-08-11 1988-08-11 高エネルギー線加工用レジスト
US07/391,035 US5015558A (en) 1988-08-11 1989-08-09 High energy beam-sensitive copolymer
DE68915642T DE68915642T2 (de) 1988-08-11 1989-08-10 Für hochenergetische Strahlung empfindliches Copolymer.
EP89308132A EP0354789B1 (en) 1988-08-11 1989-08-10 High energy beam-sensitive copolymer
KR1019890011471A KR920008724B1 (ko) 1988-08-11 1989-08-11 고에너지선에 민감한 공중합체 및 이를 사용한 내식막 패턴 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63200540A JPH0249011A (ja) 1988-08-11 1988-08-11 高エネルギー線加工用レジスト

Publications (2)

Publication Number Publication Date
JPH0249011A true JPH0249011A (ja) 1990-02-19
JPH0571605B2 JPH0571605B2 (cg-RX-API-DMAC7.html) 1993-10-07

Family

ID=16426006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63200540A Granted JPH0249011A (ja) 1988-08-11 1988-08-11 高エネルギー線加工用レジスト

Country Status (5)

Country Link
US (1) US5015558A (cg-RX-API-DMAC7.html)
EP (1) EP0354789B1 (cg-RX-API-DMAC7.html)
JP (1) JPH0249011A (cg-RX-API-DMAC7.html)
KR (1) KR920008724B1 (cg-RX-API-DMAC7.html)
DE (1) DE68915642T2 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095076A (en) * 1990-11-05 1992-03-10 Lockheed Corporation Preparation of highly soluble conductive polymer materials
JPH0786233A (ja) * 1993-09-14 1995-03-31 Nec Corp 半導体装置の製造方法およびその製造装置
US5589978A (en) * 1993-09-09 1996-12-31 Mobi Corporation Dual-path optical system

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE58907567D1 (de) * 1988-09-30 1994-06-01 Ciba Geigy Antistatische und elektrisch leitende Zusammensetzung.
US5959087A (en) * 1989-08-07 1999-09-28 Peptide Technology, Ltd. Tumour necrosis factor binding ligands
DE4444669A1 (de) * 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
TW363986B (en) * 1997-05-12 1999-07-11 Ind Tech Res Inst A process for producing polyparahydroxy styrene derivatives
KR101273140B1 (ko) * 2010-11-19 2013-06-17 주식회사 엘지화학 아크릴레이트계 화합물 및 이를 포함하는 감광성 조성물

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61143746A (ja) * 1984-12-18 1986-07-01 Asahi Chem Ind Co Ltd 新規高エネルギ−線感応性材料
JPS6311931A (ja) * 1986-02-07 1988-01-19 アメリカン・サイアナミド・カンパニ− 電子ビ−ムおよびｘ線のレジスト

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2857354A (en) * 1955-07-20 1958-10-21 Du Pont Process of making glycidyl methacrylate polymer composition containing same, and product coated therewith
BE624340A (cg-RX-API-DMAC7.html) * 1961-11-02
US4262081A (en) * 1979-11-21 1981-04-14 Bell Telephone Laboratories, Incorporated Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers
US4367281A (en) * 1981-01-12 1983-01-04 Toyo Soda Manufacturing Co., Ltd. Fine fabrication process using radiation sensitive resist
JPS58168047A (ja) * 1982-03-30 1983-10-04 Somar Corp 感光性材料
DE3248601A1 (de) * 1982-12-30 1984-07-12 Röhm GmbH, 6100 Darmstadt Polymerisate mit geringer wasseraufnahme
US4535054A (en) * 1983-05-05 1985-08-13 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61143746A (ja) * 1984-12-18 1986-07-01 Asahi Chem Ind Co Ltd 新規高エネルギ−線感応性材料
JPS6311931A (ja) * 1986-02-07 1988-01-19 アメリカン・サイアナミド・カンパニ− 電子ビ−ムおよびｘ線のレジスト

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095076A (en) * 1990-11-05 1992-03-10 Lockheed Corporation Preparation of highly soluble conductive polymer materials
US5589978A (en) * 1993-09-09 1996-12-31 Mobi Corporation Dual-path optical system
JPH0786233A (ja) * 1993-09-14 1995-03-31 Nec Corp 半導体装置の製造方法およびその製造装置

Also Published As

Publication number Publication date
DE68915642D1 (de) 1994-07-07
DE68915642T2 (de) 1994-12-15
JPH0571605B2 (cg-RX-API-DMAC7.html) 1993-10-07
EP0354789A3 (en) 1990-09-26
US5015558A (en) 1991-05-14
KR920008724B1 (ko) 1992-10-08
KR900003689A (ko) 1990-03-26
EP0354789B1 (en) 1994-06-01
EP0354789A2 (en) 1990-02-14

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