JPH0247437B2 - - Google Patents
Info
- Publication number
- JPH0247437B2 JPH0247437B2 JP57204816A JP20481682A JPH0247437B2 JP H0247437 B2 JPH0247437 B2 JP H0247437B2 JP 57204816 A JP57204816 A JP 57204816A JP 20481682 A JP20481682 A JP 20481682A JP H0247437 B2 JPH0247437 B2 JP H0247437B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- inp
- growth
- plane
- alinas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 108
- 239000007791 liquid phase Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- -1 Indium-phosphorus compound Chemical class 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000000243 solution Substances 0.000 description 24
- FPIPGXGPPPQFEQ-OVSJKPMPSA-N all-trans-retinol Chemical compound OC\C=C(/C)\C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-OVSJKPMPSA-N 0.000 description 18
- 239000000203 mixture Substances 0.000 description 16
- 230000007547 defect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000011717 all-trans-retinol Substances 0.000 description 9
- 235000019169 all-trans-retinol Nutrition 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 238000003776 cleavage reaction Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910018117 Al-In Inorganic materials 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- 229910018456 Al—In Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204816A JPS5997595A (ja) | 1982-11-22 | 1982-11-22 | 液相エピタキシヤル成長方法 |
| EP83111436A EP0111758B1 (en) | 1982-11-22 | 1983-11-15 | Liquid phase epitaxial growth method |
| DE8383111436T DE3370837D1 (en) | 1982-11-22 | 1983-11-15 | Liquid phase epitaxial growth method |
| US06/553,896 US4592791A (en) | 1982-11-22 | 1983-11-21 | Liquid phase epitaxial growth method for producing a III-V group compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204816A JPS5997595A (ja) | 1982-11-22 | 1982-11-22 | 液相エピタキシヤル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5997595A JPS5997595A (ja) | 1984-06-05 |
| JPH0247437B2 true JPH0247437B2 (US06724976-20040420-M00002.png) | 1990-10-19 |
Family
ID=16496849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57204816A Granted JPS5997595A (ja) | 1982-11-22 | 1982-11-22 | 液相エピタキシヤル成長方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4592791A (US06724976-20040420-M00002.png) |
| EP (1) | EP0111758B1 (US06724976-20040420-M00002.png) |
| JP (1) | JPS5997595A (US06724976-20040420-M00002.png) |
| DE (1) | DE3370837D1 (US06724976-20040420-M00002.png) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2595509B1 (fr) * | 1986-03-07 | 1988-05-13 | Thomson Csf | Composant en materiau semiconducteur epitaxie sur un substrat a parametre de maille different et application a divers composants en semiconducteurs |
| JPH042699A (ja) * | 1990-04-18 | 1992-01-07 | Mitsubishi Electric Corp | 結晶成長方法 |
| JPH098344A (ja) * | 1995-06-14 | 1997-01-10 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
| JPH09237913A (ja) * | 1995-12-28 | 1997-09-09 | Fuji Xerox Co Ltd | 半導体受光素子及びその製造方法 |
| US6043509A (en) * | 1996-12-13 | 2000-03-28 | Hitachi Cable, Ltd. | Light-emitting diode having moisture-proof characteristics and high output power |
| JP6220614B2 (ja) * | 2013-09-20 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| CN117344377B (zh) * | 2023-10-31 | 2024-03-26 | 粒芯科技(厦门)股份有限公司 | 一种在InP衬底上分子束外延生长InGaAs、InAlAs、InGaAlAs的定标方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1478453A (en) * | 1971-11-29 | 1977-06-29 | Secr Defence | Photocathodes |
| US3933538A (en) * | 1972-01-18 | 1976-01-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
| US4122407A (en) * | 1976-04-06 | 1978-10-24 | International Business Machines Corporation | Heterostructure junction light emitting or responding or modulating devices |
| US4326176A (en) * | 1976-04-16 | 1982-04-20 | Hitachi, Ltd. | Semiconductor laser device |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| US4372791A (en) * | 1979-04-30 | 1983-02-08 | Massachusetts Institute Of Technology | Method for fabricating DH lasers |
| US4246050A (en) * | 1979-07-23 | 1981-01-20 | Varian Associates, Inc. | Lattice constant grading in the Aly Ca1-y As1-x Sbx alloy system |
| US4342148A (en) * | 1981-02-04 | 1982-08-03 | Northern Telecom Limited | Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy |
| US4354898A (en) * | 1981-06-24 | 1982-10-19 | Bell Telephone Laboratories, Incorporated | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
| DE3129449A1 (de) * | 1981-07-25 | 1983-02-10 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | "verfahren zur regelung des partialdruckes mindestens eines stoffes oder stoffgemisches" |
-
1982
- 1982-11-22 JP JP57204816A patent/JPS5997595A/ja active Granted
-
1983
- 1983-11-15 EP EP83111436A patent/EP0111758B1/en not_active Expired
- 1983-11-15 DE DE8383111436T patent/DE3370837D1/de not_active Expired
- 1983-11-21 US US06/553,896 patent/US4592791A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0111758A1 (en) | 1984-06-27 |
| DE3370837D1 (en) | 1987-05-14 |
| US4592791A (en) | 1986-06-03 |
| EP0111758B1 (en) | 1987-04-08 |
| JPS5997595A (ja) | 1984-06-05 |
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