JPH0245350B2 - - Google Patents
Info
- Publication number
- JPH0245350B2 JPH0245350B2 JP57030026A JP3002682A JPH0245350B2 JP H0245350 B2 JPH0245350 B2 JP H0245350B2 JP 57030026 A JP57030026 A JP 57030026A JP 3002682 A JP3002682 A JP 3002682A JP H0245350 B2 JPH0245350 B2 JP H0245350B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- ceramic
- alumina
- mounting
- niobium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011521 glass Substances 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000010955 niobium Substances 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 8
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052863 mullite Inorganic materials 0.000 claims description 5
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002241 glass-ceramic Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 4
- 229910052839 forsterite Inorganic materials 0.000 description 3
- 239000006112 glass ceramic composition Substances 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Description
(1) 発明の技術分野
本発明は、ジヨセフソン素子、高電子移動度ト
ランジスタなどの、極低温で動作する高速動作素
子を実装するに適した実装構造に関し、更に詳し
くは、その実装基板材料として平滑面を備えたガ
ラス・セラミツク板を用いた実装構造に関するも
のである。
(2) 技術の背景
計算機は高密度集積回路の採用によりますます
小形化してきているが、より一層の高速性能を得
るには、現在のシリコンデバイスより高い電子移
動度を有するジヨセフソン素子や真性の化合物半
導体界面における電子輸送現象を利用した高電子
移動度トランジスタなどを用いる必要があり、こ
れらの素子を用いて高速の計算機を構成する試み
がなされている。
第１図は、ジヨセフソン計算機の提案において
示された実装構造の断面図で、主ボード１の一面
には、回路ボード２が複数設置され、各ボード上
に複数のチツプ３が搭載されている。これら全体
はケースに囲まれ、周囲は液体ヘリウムに浸漬さ
れ、極低温に冷却されるものである。
(3) 従来技術と問題点
従来、ジヨセフソン素子等の実装基板（第１図
における２）としては一般にシリコンが多用され
ている。シリコンはチツプ３と同じ材質であるた
め、熱膨脹がチツプと同一であること、また表面
平滑性に優れており、ボート２上に微細な伝送ラ
インを形成できるという長所がある。
しかしながら、シリコンは機械的強度が低いと
いう欠点があり、このため取扱いが容易でない。
過去において、ジヨセフソンチツプは、ガラ
ス、サフアイアを基板材料として用いて構成され
たので、シリコンボード２に代えて、ガラスボー
ド、サフアイアボードを用いることを考えられる
が、ガラスでは、シリコンと同じく機械的強度が
低く、またサフアイアでは極めて高価となる。機
械的強度の高い実装材料としては常温で使用する
素子の実装にも使用されるアルミナ、ムライト等
のセラミツク基板があるが、いずれも表面平滑性
に難点がある。
(4) 発明の目的
本発明は上記の問題点に鑑み、表面平滑性に優
れ、かつ機械的強度の高い材料にて構成された実
装構造を提供せんとするものである。
(5) 発明の構成
上記目的は本発明によればニオブを超伝導材料
の素材して成り且つ常温以下の低温で動作する高
速動作素子を、ボロシリケートガラスとアルミ
ナ、ムライト、マグネシア、もしくはフオルステ
ライトより成りかつ平滑面を備えたガラス・セラ
ミツク板に該素材が直接に被着されるようにして
搭載して成ることを特徴とする低温動作素子の実
装構造とすることにより、又、前記ガラス・セラ
ミツク板がボロシリケートガラスとアルミナより
なり、前記高速動作素子がニオブを超伝導材料の
素材とするものであり、かつ、該素材が直接ガラ
ス・セラミツク板に被着されていることを特徴と
する低温動作素子の実装構造とすることにより達
成される。
概説すれば本発明は、ガラスの持つ表面平滑性
と、セラミツクの特徴である強度とを組み合わせ
た、ガラス・セラミツク材料を低温で作動する高
速論理素子の実装基板として使用することにあ
る。このガラス・セラミツク材料は、フイラーと
してセラミツクを用いガラスの強度を高めたもの
であり、ガラスないしはシリコンなみの表面平滑
性をもち、かつ強度は通常のガラスの約３倍であ
る。
(6) 発明の実施例
実施例 １
本発明によるガラスセラミツク材料は、ガラス
粉末とアルミナ粉末よりなり、ガラス粉末は耐熱
性・耐薬品性を考慮すると、ボロシリケートガラ
ス、石英ガラス等が望ましく、本実施例では前者
を選択した。またセラミツク粉末としては、アル
ミナ、ムライト、マグネシア、フオルステライト
等が考えられるが、本実施例ではアルミナを選択
した。
下表−１はガラス・セラミツク材料粉末の組成
と、その組成から得られる基板の物性を示す。
Ａ−１乃至Ａ−５の組成の原料粉末を、周知の
ボールミルにて十分に粉砕、混合した後、粉末
100部に対して、表−２に示す重量割合にて、バ
インダーならびに溶剤と混練し、ドクター・ブレ
ード法によりグリーンシートを形成する。
このグリーンシートは800〜1000℃で焼成して
ガラス・セラミツク基板を得、ポリツシユ研磨し
て実装基板を作成する。こうして得られた実装基
板は表−１に示される物性を持ち、表面粗さは小
さく機械的強度が高い。
尚、熱膨脹率は300〓における値である。
(1) Technical field of the invention The present invention relates to a mounting structure suitable for mounting high-speed operating elements that operate at extremely low temperatures, such as Josephson elements and high electron mobility transistors, and more specifically, the present invention relates to a mounting structure suitable for mounting high-speed operating elements that operate at extremely low temperatures, such as Josephson elements and high electron mobility transistors. This relates to a mounting structure using a glass/ceramic plate with a surface. (2) Background of the technology Computers are becoming increasingly smaller due to the adoption of high-density integrated circuits, but in order to achieve even higher speed performance, it is necessary to use di-Josefson devices and intrinsic compounds, which have higher electron mobility than current silicon devices. It is necessary to use high electron mobility transistors that utilize electron transport phenomena at semiconductor interfaces, and attempts are being made to construct high-speed computers using these devices. FIG. 1 is a sectional view of the mounting structure shown in the Josephson computer proposal. A plurality of circuit boards 2 are installed on one side of a main board 1, and a plurality of chips 3 are mounted on each board. The whole thing is surrounded by a case, and the surrounding area is immersed in liquid helium, which cools it to an extremely low temperature. (3) Prior Art and Problems Conventionally, silicon has generally been widely used as a mounting substrate (2 in FIG. 1) for Josephson devices and the like. Since silicon is the same material as the chip 3, it has the advantage that it has the same thermal expansion as the chip, has excellent surface smoothness, and can form fine transmission lines on the boat 2. However, silicon has the disadvantage of low mechanical strength, which makes it difficult to handle. In the past, Josephson chips were constructed using glass and sapphire as substrate materials, so it is conceivable to use a glass board or sapphire board instead of the silicon board 2, but glass is the same as silicon. It has low mechanical strength, and sapphire is extremely expensive. As mounting materials with high mechanical strength, there are ceramic substrates such as alumina and mullite, which are also used for mounting elements that are used at room temperature, but they all have problems with surface smoothness. (4) Purpose of the Invention In view of the above-mentioned problems, the present invention aims to provide a mounting structure made of a material with excellent surface smoothness and high mechanical strength. (5) Structure of the Invention According to the present invention, the above object is to provide a high-speed operating element made of niobium as a superconducting material and operating at a low temperature below room temperature, using borosilicate glass and alumina, mullite, magnesia, or forsterite. By providing a mounting structure for a low-temperature operation element, which is characterized in that the material is mounted on a glass-ceramic plate having a smooth surface and made of glass, the material is directly adhered to the glass-ceramic plate. The ceramic plate is made of borosilicate glass and alumina, and the high-speed operation element is made of niobium as a superconducting material, and the material is directly adhered to the glass-ceramic plate. This is achieved by using a mounting structure for low-temperature operating elements. Briefly, the present invention is to use a glass-ceramic material that combines the surface smoothness of glass and the strength of ceramic as a mounting board for high-speed logic elements that operate at low temperatures. This glass-ceramic material uses ceramic as a filler to increase the strength of glass, and has a surface smoothness comparable to that of glass or silicon, and is about three times as strong as ordinary glass. (6) Examples of the invention Example 1 The glass-ceramic material according to the present invention is composed of glass powder and alumina powder. Considering heat resistance and chemical resistance, the glass powder is preferably borosilicate glass, quartz glass, etc. In the example, the former was selected. Further, as the ceramic powder, alumina, mullite, magnesia, forsterite, etc. can be considered, but alumina was selected in this example. Table 1 below shows the composition of the glass/ceramic material powder and the physical properties of the substrate obtained from the composition. After thoroughly grinding and mixing raw material powders having compositions A-1 to A-5 in a well-known ball mill, powder
100 parts is kneaded with a binder and a solvent in the weight proportions shown in Table 2, and a green sheet is formed by a doctor blade method. This green sheet is fired at 800-1000°C to obtain a glass/ceramic substrate, which is then polished to create a mounting board. The thus obtained mounting board has the physical properties shown in Table 1, and has low surface roughness and high mechanical strength. The coefficient of thermal expansion is the value at 300ⓓ.
【表】【table】
【表】【table】
【表】
本実施例によれば、機械的強度が高いため、基
板の取扱いが容易で作業性が優れているばかりで
なく、表面平滑性も酔いため、微細な伝送ライン
の形成も可能である。
実施例 ２
実施例１のアルミナ粉末に代えて、セラミツク
粉末としてムライト（下表のＭ−１、Ｍ−２）、
マグネシア（下表のMG−１）、フオルステライ
ト（Ｆ−１）をそれぞれ選択したときの粉末組成
を下表−３に示す。[Table] According to this example, not only is the substrate easy to handle and has excellent workability due to its high mechanical strength, but also the surface smoothness makes it possible to form fine transmission lines. . Example 2 Mullite (M-1, M-2 in the table below) was used as ceramic powder in place of the alumina powder in Example 1.
The powder compositions when magnesia (MG-1 in the table below) and forsterite (F-1) were selected are shown in Table 3 below.
【表】
実施例 ３
実施例では実施例１における伝送ラインを構成
するニオブとガラスセラミツクの熱膨脹率差によ
る剥離ないしは切断を防止することのできるガラ
ス・セラミツク基板を提供する。
表−４に示す割合で原料粉末を秤量し、ボール
ミル後、実施例１と同じ表−２の割合でバインダ
他と混合し、ガラス・セラミツク・スリツプを作
成する。このスリツプをドクタブレード法により
キヤステイングし、グリーンシートを整形する。
このグリーンシートを800〜900℃で焼成し、ガラ
ス・セラミツク基板を作成する。
このガラス・セラミツク基板は第２図に示すよ
うに、室温から液体ヘリウム温度（4.2〓）間の
熱膨脹がニオブ（Nb）と極めて類似している。[Table] Example 3 In this example, a glass-ceramic substrate is provided which can prevent peeling or cutting due to the difference in coefficient of thermal expansion between niobium and glass ceramic constituting the transmission line in Example 1. The raw material powder was weighed in the proportions shown in Table 4, and after ball milling, it was mixed with a binder and others in the proportions shown in Table 2, the same as in Example 1, to produce glass ceramic slips. This slip is casted by a doctor blade method to form a green sheet.
This green sheet is fired at 800-900℃ to create a glass/ceramic substrate. As shown in Figure 2, this glass-ceramic substrate exhibits thermal expansion that is extremely similar to that of niobium (Nb) between room temperature and liquid helium temperature (4.2〓).
【表】
本例にて、アルミナ量が60％を超えて多くなる
と表面平滑性は失なわれ、又、30％を下回るとき
は曲げ強度が低下する。
シリカ（SiO2）については、28％より低いと
表面平滑性が失なわれ、49％より大きくなると曲
げ強度が低下する。
硼酸（B2O3）についても、10％以下では表面
平滑性が失われ、18％を越えると、曲げ強度が低
下する。
表−３に示す組成範囲においては、表面粗さは
満足のいくものであり、曲げ強度は極めて高い。
(7) 発明の効果
本発明では、ガラス表面平滑性、セラミツクの
高強度を兼ねたガラス・セラミツク材料を低温で
動作する高速論理素子の実装基板として使用する
ので、実装基板としての取扱いが容易で作業性が
優れるばかりでなく、表面平滑性が良いので微細
な伝送ラインの形成も可能であるし、本発明にて
セラミツク組成を選べば、超伝導材料としてのニ
オブと熱膨脹係数の極めて類似したガラス・セラ
ミツク基板を構成でき、従つて、室温からの極低
温までのヒートサイクルが加わつても、ニオブの
伝導ラインの被損、切断等が起りにくい。[Table] In this example, when the amount of alumina increases beyond 60%, the surface smoothness is lost, and when it falls below 30%, the bending strength decreases. Regarding silica (SiO 2 ), if it is less than 28%, the surface smoothness will be lost, and if it is more than 49%, the bending strength will be reduced. As for boric acid (B 2 O 3 ), if it is less than 10%, the surface smoothness will be lost, and if it exceeds 18%, the bending strength will decrease. In the composition range shown in Table 3, the surface roughness is satisfactory and the bending strength is extremely high. (7) Effects of the Invention In the present invention, a glass/ceramic material that has both the smoothness of the glass surface and the high strength of ceramic is used as a mounting board for high-speed logic elements that operate at low temperatures, so it is easy to handle as a mounting board. Not only is it easy to work with, but its surface smoothness makes it possible to form fine transmission lines.If the ceramic composition of the present invention is selected, it can be used as a superconducting material such as niobium, which has a thermal expansion coefficient very similar to that of glass. - It can be constructed of a ceramic substrate, so damage or breakage of the niobium conductive line is unlikely to occur even when subjected to heat cycles from room temperature to extremely low temperatures.
第１図は従来ジヨセフソン計算機の提案にて示
された実装構造を示す断面図、第２図は本発明の
実施例にて得たガラス・セラミツク基板とニオブ
の各温度における熱膨脹係数を示す図である。
Figure 1 is a cross-sectional view showing the mounting structure proposed by the Josephson computer, and Figure 2 is a diagram showing the coefficient of thermal expansion at various temperatures of the glass/ceramic substrate and niobium obtained in the embodiment of the present invention. be.
Claims (1)
温以下の低温で動作する高速動作素子を、ボロシ
リケートガラスとアルミナ、ムライト、マグネシ
ア、もしくはフオルステライトより成りかつ平滑
面を備えたガラス・セラミツク板に該素材が直接
に被着されるように搭載して成ることを特徴とす
る低温動作素子の実装構造。1. A high-speed operating element made of niobium as a superconducting material and operating at a low temperature below room temperature is attached to a glass/ceramic plate made of borosilicate glass, alumina, mullite, magnesia, or forstellite and having a smooth surface. A mounting structure for a low-temperature operating element characterized by being mounted so that a material is directly adhered to it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030026A JPS58147190A (en) | 1982-02-26 | 1982-02-26 | Mounting structure for low temperature operating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030026A JPS58147190A (en) | 1982-02-26 | 1982-02-26 | Mounting structure for low temperature operating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147190A JPS58147190A (en) | 1983-09-01 |
| JPH0245350B2 true JPH0245350B2 (en) | 1990-10-09 |
Family
ID=12292312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57030026A Granted JPS58147190A (en) | 1982-02-26 | 1982-02-26 | Mounting structure for low temperature operating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147190A (en) |
-
1982
- 1982-02-26 JP JP57030026A patent/JPS58147190A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58147190A (en) | 1983-09-01 |
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