JPH0244313Y2 - - Google Patents
Info
- Publication number
- JPH0244313Y2 JPH0244313Y2 JP1983197805U JP19780583U JPH0244313Y2 JP H0244313 Y2 JPH0244313 Y2 JP H0244313Y2 JP 1983197805 U JP1983197805 U JP 1983197805U JP 19780583 U JP19780583 U JP 19780583U JP H0244313 Y2 JPH0244313 Y2 JP H0244313Y2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- substrate
- sic single
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983197805U JPS60104869U (ja) | 1983-12-21 | 1983-12-21 | ＳｉＣドツトマトリツクス表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1983197805U JPS60104869U (ja) | 1983-12-21 | 1983-12-21 | ＳｉＣドツトマトリツクス表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60104869U JPS60104869U (ja) | 1985-07-17 |
| JPH0244313Y2 true JPH0244313Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-11-26 |
Family
ID=30756290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1983197805U Granted JPS60104869U (ja) | 1983-12-21 | 1983-12-21 | ＳｉＣドツトマトリツクス表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60104869U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1983
- 1983-12-21 JP JP1983197805U patent/JPS60104869U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60104869U (ja) | 1985-07-17 |