JPH0243867Y2 - - Google Patents

Info

Publication number
JPH0243867Y2
JPH0243867Y2 JP1986065062U JP6506286U JPH0243867Y2 JP H0243867 Y2 JPH0243867 Y2 JP H0243867Y2 JP 1986065062 U JP1986065062 U JP 1986065062U JP 6506286 U JP6506286 U JP 6506286U JP H0243867 Y2 JPH0243867 Y2 JP H0243867Y2
Authority
JP
Japan
Prior art keywords
discharge
pressure
vacuum chamber
gas introduction
introduction mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1986065062U
Other languages
English (en)
Japanese (ja)
Other versions
JPS61183965U (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986065062U priority Critical patent/JPH0243867Y2/ja
Publication of JPS61183965U publication Critical patent/JPS61183965U/ja
Application granted granted Critical
Publication of JPH0243867Y2 publication Critical patent/JPH0243867Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP1986065062U 1986-05-01 1986-05-01 Expired JPH0243867Y2 (OSRAM)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986065062U JPH0243867Y2 (OSRAM) 1986-05-01 1986-05-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986065062U JPH0243867Y2 (OSRAM) 1986-05-01 1986-05-01

Publications (2)

Publication Number Publication Date
JPS61183965U JPS61183965U (OSRAM) 1986-11-17
JPH0243867Y2 true JPH0243867Y2 (OSRAM) 1990-11-21

Family

ID=30596712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986065062U Expired JPH0243867Y2 (OSRAM) 1986-05-01 1986-05-01

Country Status (1)

Country Link
JP (1) JPH0243867Y2 (OSRAM)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104476A (en) * 1976-03-01 1977-09-01 Hitachi Ltd Ion spattering apparatus
JPS56152973A (en) * 1980-04-30 1981-11-26 Tokuda Seisakusho Ltd Sputter etching device

Also Published As

Publication number Publication date
JPS61183965U (OSRAM) 1986-11-17

Similar Documents

Publication Publication Date Title
US4894132A (en) Sputtering method and apparatus
CN101892463B (zh) 稳定的和可重复的等离子体离子注入的方法
JPS6131186B2 (OSRAM)
JP2002510364A (ja) バイアススパッタリング方法
US6551444B2 (en) Plasma processing apparatus and method of processing
JPH0726198B2 (ja) 薄膜形成方法及びその装置
KR20200031161A (ko) 진공 밸브의 제어 방법
JPH0243867Y2 (OSRAM)
US6756785B2 (en) Pressure controlled degas system for hot cathode ionization pressure gauges
JPS5893873A (ja) 放電装置
TW202307927A (zh) 物理氣相沉積設備的腔體
JPH1068074A (ja) スパッタリング方法及び装置
JPH09302464A (ja) 高周波スパッタ装置および複合酸化物の薄膜形成方法
RU2839566C1 (ru) Устройство с числовым программным управлением для нанесения заданных по толщине слоев материалов на поверхности подложек
JP3874969B2 (ja) プラズマ発生方法及びプラズマ処理装置
KR200149909Y1 (ko) 스퍼터링 장치
JPH07109560A (ja) 放電脱ガス装置
JPS6154627A (ja) プラズマ処理方法
JP2675688B2 (ja) イオンミリング装置のガス導入系
JP2818539B2 (ja) イオン注入方法およびその装置
JPH02205674A (ja) マグネトロンスパッタリング装置
JPS6358833A (ja) ドライエツチング装置におけるエツチング圧力の制御方法
JPH0742583B2 (ja) 薄膜形成装置
JP2736559B2 (ja) ガスソースmbeにおけるガス導入方法および装置
JPH0410616A (ja) X線マスクの製造方法