JPH0243360A - Physical vapor deposition device - Google Patents

Abstract

PURPOSE:To uniformize the substrate temp. at the time of vapor deposition and to form a homogeneous film having an excellent adhesive property by dividing heaters for heating the substrate opposite to an evaporating source and controlling the outputs of the respectively divided heaters according to the temp. distribution of the substrate. CONSTITUTION:The heater 4 for heating the substrate 3 opposite to the evaporating source 2 is provided in a vacuum chamber 1 of the physical vapor deposition device and is divided to 4a, 4b, 4c. The temp. of the substrate 3 is measured by thermocouples 5a, 5b, 5c disposed in accordance with the divided positions and the outputs of the respective heaters 4a, 4b, 4c are controlled by a controller. The substrate 3 is previously uniformly heated by the heaters 4a, 4b, 4c and the outputs of the respective heaters 4a, 4b, 4c are controlled according to the temp. distribution of the substrate 3 after the start of evaporation. The nonuniform distribution of the temp. of the substrate 3 by the radiation heat of the evaporating source 2 is prevented in this way.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention is applicable to PVD (physical vapor deposition) such as ion plate ink, sputtering, and vacuum evaporation.
The present invention relates to a physical vapor deposition apparatus for forming a film on a substrate such as metal or plastic using a deposition method.

[Prior art] A ceramic or metal film is formed on the surface of a metal or plastic substrate to improve decorativeness and corrosion resistance.
The PVD method is used as a means of imparting various functions such as electrical properties.

In the PVD method, the substrate is heated to an appropriate temperature for vapor deposition. Since the temperature of the substrate affects the film quality and adhesion of the film to the substrate, temperature control is an important condition in vapor deposition. As a heating source, a heater such as resistance heating or an infrared lamp is used.

There are two types of vapor deposition apparatuses: a batch method that deposits on a fixed substrate, and a continuous method that deposits while continuously moving the substrate. In either method, the heater for heating the substrate of the conventional device has a structure that uniformly applies heat to the entire substrate. In other words, the design was such that the amount of heat input per unit area of the substrate was uniform.

[Problem to be solved by the invention] In conventional physical vapor deposition equipment, the entire substrate is uniformly heated during preheating before vapor deposition, but when vapor deposition starts, the temperature of the substrate further increases due to radiant heat from the evaporation source. temperature distribution becomes uneven.

For example, in the McNetron type sputter link,
By concentrating the plasma locally using a magnetic field and performing sputter linking efficiently, the portion of the evaporation source where the plasma is concentrated becomes locally hot. Therefore, the substrate is locally heated by the radiant heat from the evaporation source, resulting in uneven temperature distribution on the substrate.

In addition, in ion blating and vacuum evaporation, the temperature of the evaporation source is higher than the melting point of the evaporation material because the material is melted, evaporated, and attached to the substrate. Localized heating results in uneven temperature distribution.

In conventional apparatuses, the heater for heating the substrate has a structure that applies heat uniformly to the entire substrate, so it is impossible to prevent such non-uniformity in temperature distribution during vapor deposition.

If the temperature of the substrate is uneven during vapor deposition, the film will be uneven.
In addition, poor adhesion to the substrate may occur. moreover,
The substrate may also be deformed due to thermal strain.

The present invention provides a physical vapor deposition apparatus for forming a film on a substrate using PVD methods such as ion plate ink, sputter link, and vacuum evaporation, which controls the temperature distribution of the substrate not only during preheating before evaporation but also during evaporation. By making it uniform,
The purpose is to form a homogeneous and adhesive film.

[Means for Solving the Problems] To achieve this object, the present invention includes an apparatus for forming a film on a substrate by physical vapor deposition, in which a heater for heating the substrate is separately installed facing an evaporation source. , the output of each divided heater can be adjusted according to the temperature distribution of the substrate.

[Function] By dividing the heater in this way and making it possible to adjust the output for each divided heater, the output of the heater can always be maintained within the appropriate range in response to changes in the temperature distribution of the board and other working conditions. It is possible.

[Embodiment of the Invention] Hereinafter, the apparatus of the present invention will be specifically explained using the hatch type sputter link apparatus shown in FIG. 1 as an example. A heater 4 for heating the substrate 3 is provided in a divided manner, facing the evaporation source 2 in the vacuum chamber 1 . In this example, the heater 4 is divided into three parts 4a, 4b, and 4c. The temperature of the substrate 3 is determined by thermocouples 5a, 5b, 5 distributed according to the dividing positions.
According to the measured values, the output of each heater can be adjusted by a control device (not shown). In the figure, 6 is an exhaust port, 7 is a gas inlet, and 8 is a high frequency power source for applying high frequency between the evaporation source 2 and the substrate 3.

Note that the output of each divided heater may be adjusted based on the measured value of the substrate temperature, or may be set in advance if the temperature distribution at the substrate position during vapor deposition is known.

In the hatch-type apparatus shown in FIG. 1, the substrate 3 is uniformly preheated by giving uniform output to each heater 4a, 4b, and 4c before vapor deposition, but after the start of vapor deposition, the substrate 3 is preheated uniformly. By adjusting the output of the upper C heaters 4a, 4b, and 4c according to the temperature distribution, uneven temperature distribution due to the radiant heat of the evaporation source can be prevented. Further, the output of each heater can be set in advance to an appropriate value according to the type and size of the evaporation source, the characteristics such as the size and emissivity of the substrate, the evaporation conditions, and the like.

In the case of a continuous type, the heater facing the evaporation source as shown in Fig. 1 can only preheat the material, so the temperature distribution of the substrate is not affected and the influence of the evaporation source is large. It is valid.

[Example 1] Using the batch type sputter link apparatus shown in FIG.
300mm x 30 with 203 target as evaporation source
AQ2 on a stainless steel substrate with a thickness of 0.3 mm and a thickness of 0.3 mm.
03 film was formed. Gas is introduced from the waste introduction lower, and the pressure inside chamber 1 is 5 x 10-'Torr.
was controlled. After preheating the substrate 3 to 300°C by setting the output of each heater 4a, 4b, 4c uniformly, vapor deposition is started, and the output of each heater is adjusted based on the temperature value measured by the thermocouples 5a, 5b, 5c. A film of a predetermined thickness was formed while adjusting the thickness. The temperature distribution of the substrate immediately after the completion of vapor deposition was as shown by the solid line in FIG. 3: 100 mm wide and 300° C.±10° C. Note that the broken line in the figure is a conventional example in which the output of each heater is made uniform even during vapor deposition.

Example 2 Using the continuous ion plate ink device shown in Fig. 2,
T1 is the evaporation source, 300 [1111 width, thickness [], 3
A TiN film was formed on a +n+n stainless steel strip plate as a substrate while being transported in a direction perpendicular to the plane of the paper. N2 sludge was introduced from the sludge introduction lower, and the pressure inside the chamber 1 was controlled to I x 10-3 Torr. Each heater 4a
, 4b, and 4c are set uniformly, and the periphery of the board 3 is
After preheating to 00°C, vapor deposition is started and the thermocouple 5a
, 5b, and 5c while adjusting the output of each heater based on the measured temperature values, the substrate was passed through the substrate to continuously form a film of a predetermined thickness. As shown by the solid line in FIG. 4, the temperature distribution of the substrate during vapor deposition was 300° C.±10° C. with almost no change over time. Note that the broken line in the figure is a conventional example in which the output of each heater is made uniform even during vapor deposition.

[Effect of the invention] When forming a film on a substrate by PVD methods such as ion plate ink, sputter link, and vacuum evaporation, by using the apparatus of the present invention, it is possible to reduce the time during evaporation not only by hatch type but also by continuous type. The substrate temperature becomes uniform, and a homogeneous film with excellent electrodepositivity can be obtained.

[Brief explanation of the drawing]

FIGS. 1 and 2 are diagrams showing an example of the present invention, and FIGS. 3 and 4 are diagrams showing the effects of the present invention. l... Vacuum chamber, 2... Evaporation source, 3... Substrate, 4... Heater, 5... Thermocouple, 6... Exhaust port, 7... Waste inlet, 8... ...High frequency power supply, 9...
・+1 CD heam power supply, 10...acceleration electrode power supply.

Claims (1)

[Claims] 1. A device that forms a film on a substrate by physical vapor deposition. A heater for heating the substrate is provided separately facing the evaporation source, and the output of each divided heater can be adjusted according to the temperature distribution of the substrate. A physical vapor deposition apparatus characterized by: