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Priority to JP11416880ApriorityCriticalpatent/JPS5737869A/ja
Publication of JPS5737869ApublicationCriticalpatent/JPS5737869A/ja
Publication of JPH0243346B2publicationCriticalpatent/JPH0243346B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
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