JPH0243338B2 - - Google Patents
Info
- Publication number
- JPH0243338B2 JPH0243338B2 JP61167923A JP16792386A JPH0243338B2 JP H0243338 B2 JPH0243338 B2 JP H0243338B2 JP 61167923 A JP61167923 A JP 61167923A JP 16792386 A JP16792386 A JP 16792386A JP H0243338 B2 JPH0243338 B2 JP H0243338B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- layer
- transistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 97
- 239000010408 film Substances 0.000 description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000002955 isolation Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61167923A JPS6211271A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61167923A JPS6211271A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7571579A Division JPS561556A (en) | 1979-06-18 | 1979-06-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6211271A JPS6211271A (ja) | 1987-01-20 |
| JPH0243338B2 true JPH0243338B2 (fr) | 1990-09-28 |
Family
ID=15858563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61167923A Granted JPS6211271A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211271A (fr) |
-
1986
- 1986-07-18 JP JP61167923A patent/JPS6211271A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN=1979US * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211271A (ja) | 1987-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4892837A (en) | Method for manufacturing semiconductor integrated circuit device | |
| US5019523A (en) | Process for making polysilicon contacts to IC mesas | |
| KR910006672B1 (ko) | 반도체 집적회로 장치 및 그의 제조 방법 | |
| US5061645A (en) | Method of manufacturing a bipolar transistor | |
| US4887145A (en) | Semiconductor device in which electrodes are formed in a self-aligned manner | |
| US4407059A (en) | Method of producing semiconductor device | |
| JPH0241170B2 (fr) | ||
| JPS60202965A (ja) | 改良した酸化物画定型トランジスタの製造方法及びその結果得られる構成体 | |
| JPS61231761A (ja) | 半導体装置 | |
| US4819055A (en) | Semiconductor device having a PN junction formed on an insulator film | |
| JPH0243338B2 (fr) | ||
| JPH06302826A (ja) | 絶縁ゲート電界効果トランジスタ及びその製造方法 | |
| EP0032016B1 (fr) | Procédé de fabrication d'un dispositif semiconducteur | |
| JP2697631B2 (ja) | 半導体装置の製造方法 | |
| JP2797774B2 (ja) | 半導体装置およびその製造方法 | |
| JPH05275633A (ja) | 半導体装置及びその製造方法 | |
| JPH04287329A (ja) | ラテラルバイポーラトランジスタの製造方法 | |
| JP3120441B2 (ja) | 半導体装置およびその製造方法 | |
| JPH0157506B2 (fr) | ||
| JPH0317374B2 (fr) | ||
| JPH01147864A (ja) | 半導体装置 | |
| JPS62281469A (ja) | 半導体装置 | |
| JPS61269373A (ja) | 半導体装置 | |
| JPS629226B2 (fr) | ||
| JPS5984464A (ja) | 半導体集積回路装置の製造方法 |