JPH0242430B2 - - Google Patents
Info
- Publication number
- JPH0242430B2 JPH0242430B2 JP58077807A JP7780783A JPH0242430B2 JP H0242430 B2 JPH0242430 B2 JP H0242430B2 JP 58077807 A JP58077807 A JP 58077807A JP 7780783 A JP7780783 A JP 7780783A JP H0242430 B2 JPH0242430 B2 JP H0242430B2
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- sensitive
- humidity
- film
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001477 hydrophilic polymer Polymers 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 and others are used Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/126—Composition of the body, e.g. the composition of its sensitive layer comprising organic polymers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
＜技術分野＞
本発明は高分子膜から成る感湿膜を有し、雰囲
気中の湿度の変化をインピーダンスの変化により
検出する感湿素子の製造方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to a method for manufacturing a moisture-sensitive element that has a moisture-sensitive film made of a polymer film and detects changes in humidity in an atmosphere by changes in impedance.
＜従来技術＞
雰囲気中の湿度に感応してインピーダンスが変
化する感湿素子としては、従来より酸化鉄
（Fe2O3又はFe3O4）、酸化錫（SnO2）などの金属
酸化物の焼結体或は金属酸化膜を用いたもの、
親水性高分子膜を用いたもの、塩化リチウム
（LiCl）などの電解質塩を用いたもの及び吸湿
性樹脂或は高分子膜などにに炭素などの導電性粒
子又は繊維を分散させたものなどが知られてい
る。このうち、金属酸化物を用いた感湿素子は、
一般に広い感湿範囲を有するが、素子の抵抗値は
相対湿度の値に対応して指数関数的に変化する。
また、塩化リチウムなどの電解質塩を用いた感湿
素子は検出し得る湿度領域が狭く、特に高湿度雰
囲気中に長時間素子を放置すると電解質塩が溶出
又は希釈されるために感湿特性が著しく劣化する
などの理由で、高湿雰囲気の測定には利用するこ
とができない。さらに、吸湿性樹脂などに導電性
粒子或は繊維等を分散させた感湿素子は、高湿度
雰囲気中では急峻な抵抗変化を生じる反面低湿度
雰囲気中では感度がなく、広範な湿度領域の検知
には利用することができない。一方親水性高分子
膜或は高分子電解質を用いたものは、製造方法が
簡単で再現性・互換性に優れる、感湿範囲が広
い、抵抗変化が大きく感度が大きい、感湿応答速
度も速いなどの利点から注目されており一部実用
化されている。<Prior art> Moisture sensing elements whose impedance changes in response to atmospheric humidity have traditionally been made using metal oxides such as iron oxide (Fe 2 O 3 or Fe 3 O 4 ) and tin oxide (SnO 2 ). Those using sintered bodies or metal oxide films,
Examples include those using a hydrophilic polymer membrane, those using electrolyte salts such as lithium chloride (LiCl), and those using conductive particles or fibers such as carbon dispersed in a hygroscopic resin or polymer membrane. Are known. Among these, moisture-sensitive elements using metal oxides are
Although it generally has a wide humidity sensitive range, the resistance value of the element changes exponentially in response to the value of relative humidity.
In addition, humidity sensing elements that use electrolyte salts such as lithium chloride have a narrow detectable humidity range, and if the element is left in a high humidity atmosphere for a long time, the electrolyte salts will be eluted or diluted, resulting in significant humidity sensitivity. For reasons such as deterioration, it cannot be used for measurements in high humidity atmospheres. Furthermore, a moisture-sensing element made of conductive particles or fibers dispersed in a hygroscopic resin or the like exhibits a steep resistance change in a high-humidity atmosphere, but lacks sensitivity in a low-humidity atmosphere, making it difficult to detect a wide range of humidity. cannot be used. On the other hand, those using hydrophilic polymer membranes or polymer electrolytes are easy to manufacture, have excellent reproducibility and compatibility, have a wide moisture sensitivity range, have a large resistance change, have high sensitivity, and have a fast moisture response speed. It has attracted attention due to its advantages, and some of it has been put into practical use.
ところでこれらの感湿膜の形成方法としては、
通常、デイツピング、スピンコーテイング等の方
法が採られているが、これらの方法では、直接の
パターン形成はできない。また、湿式エツチング
の方法については、高分子感湿膜は、通常、架
橋・重合或いは熱処理等の方法によつて耐水性及
び耐溶剤性が確立されているため、適当なエツチ
ング液がない。従つて従来は、リード接続部など
感湿膜の不要な部分をハンダごての熱で溶かして
除去したり或いは予めテープを貼り付け、感湿膜
をコーテイングした後テープと共に感湿膜を部分
的に剥離するなどの単純な方法でパターンを形成
していた。このため、熱による感湿膜の変質や境
界部での感湿膜の浮き上り等の問題が発生しまた
パターン寸法も非常に大きなものしか形成するこ
とができない。さらに精度及び再現性が非常に悪
いなど多くの問題があり、このような方法によつ
ては、１mm以下のパターン寸法を実現することは
きわめて困難であつた。尚、直接パターン形成を
行なう方法としてスクリーン印刷法があるが、印
刷用には高粘度溶液を必要とし、高分子材料の高
粘度溶液は粘度変化し易く、バラツキの原因とな
る。また不純物の混入が多い、精度・再現性が悪
く微細化に限界があるなど多くの問題がありこの
ためスクリーン印刷法は高分子感湿膜のコーテイ
ング法としてはあまり使用されていない。 By the way, the method for forming these moisture-sensitive films is as follows.
Usually, methods such as dipping and spin coating are used, but these methods cannot directly form a pattern. Regarding the wet etching method, there is no suitable etching solution because the water resistance and solvent resistance of polymeric moisture-sensitive membranes is usually established through crosslinking, polymerization, heat treatment, or other methods. Therefore, in the past, unnecessary parts of the moisture-sensitive film such as lead connections were removed by melting them with the heat of a soldering iron, or tape was pasted in advance, and after the moisture-sensitive film was coated, the moisture-sensitive film was partially removed with the tape. Patterns were formed using simple methods such as peeling it off. For this reason, problems such as deterioration of the moisture-sensitive film due to heat and lifting of the moisture-sensitive film at boundaries occur, and only very large patterns can be formed. Furthermore, there are many problems such as very poor accuracy and reproducibility, and it is extremely difficult to realize a pattern size of 1 mm or less using this method. Screen printing is a method for directly forming a pattern, but it requires a high viscosity solution for printing, and high viscosity solutions of polymeric materials tend to change in viscosity, causing variations. In addition, there are many problems such as high contamination of impurities, poor precision and reproducibility, and limitations in miniaturization, and for this reason, screen printing is not often used as a coating method for polymeric moisture-sensitive films.
以上のように、従来法では高分子感湿膜の微細
加工を行なうことは、非常に困難であり、高分子
感湿膜を用いて、微細パターンを形成した感湿素
子は、未だ報告されていなかつた。 As mentioned above, it is extremely difficult to perform microfabrication of polymeric moisture-sensitive films using conventional methods, and moisture-sensitive elements in which fine patterns are formed using polymeric moisture-sensitive films have not yet been reported. Nakatsuta.
一方、近年素子の小型化及び複合化が進み、
FET（電界効果トランジスタ）のゲート部に感湿
材料を付着したFET湿度センサも開発されつつ
ある。従つて、感湿膜をより微細に加工する技術
はますますその必要度を増している。 On the other hand, in recent years, elements have become smaller and more complex,
FET (field effect transistor) humidity sensors that have a moisture-sensitive material attached to their gate are also being developed. Therefore, there is an increasing need for techniques for finely processing moisture-sensitive membranes.
＜発明の目的＞
本発明は上記現状に鑑み、高分子感湿材料を精
度よく、再現性よく、かつ任意の形状に微細加工
する技術を利用して、感湿膜を微細加工した感湿
素子の製造方法を提供することを目的とするもの
である。<Purpose of the Invention> In view of the above-mentioned current situation, the present invention provides a moisture-sensitive element in which a moisture-sensitive film is micro-processed using technology for micro-processing a polymeric moisture-sensitive material into an arbitrary shape with high precision and reproducibility. The purpose of this invention is to provide a method for manufacturing.
＜実施例＞
第１図Ａ，Ｂ，Ｃ，Ｄ，Ｅは本発明の１実施例
である感湿素子の製造工程図である。<Example> FIGS. 1A, B, C, D, and E are manufacturing process diagrams of a moisture-sensitive element that is an example of the present invention.
第１図Ａに示す如く、ガラス、アルミナ等の絶
縁体又はシリコン等の半導体から成る基板１上に
インピーダンスを検出するための電極２を所定ピ
ツチで多数列設し、更に第１図Ｂに示す如く高分
子材料の溶液をデイツピング法又はスピンコーテ
イング法等によつてコーテイングして薄膜３とす
る。電極２の配列ピツチや幅は１mm以下でもよ
い。電極２としては、金、白金等の如く酸素プラ
ズマ中でも酸化されない貴金属類が望ましい。ま
た薄膜３を構成する高分子材料としては、セルロ
ース、ポリアクリル酸塩、ポリスチレンスルホン
酸塩、ポリビニルアルコールその他が用いられる
が、特にポリビニルアルコールが良好な感湿特性
を示す。これらを水または多価アルコール等の溶
媒に適度の濃度に溶解した後、この溶液を上述の
如くコーテイングすることにより薄膜３が形成さ
れる。 As shown in FIG. 1A, multiple rows of electrodes 2 for detecting impedance are provided at a predetermined pitch on a substrate 1 made of an insulator such as glass or alumina or a semiconductor such as silicon, and as shown in FIG. 1B. A thin film 3 is formed by coating a solution of a polymeric material by a dipping method, a spin coating method, or the like. The arrangement pitch and width of the electrodes 2 may be 1 mm or less. The electrode 2 is preferably made of noble metals such as gold, platinum, etc., which are not oxidized even in oxygen plasma. Further, as the polymer material constituting the thin film 3, cellulose, polyacrylate, polystyrene sulfonate, polyvinyl alcohol, and others are used, and polyvinyl alcohol exhibits particularly good moisture sensitivity characteristics. After dissolving these in a solvent such as water or polyhydric alcohol to an appropriate concentration, the thin film 3 is formed by coating this solution as described above.
次に第１図Ｃに示す如く、薄膜３上に例えばフ
オトレジスト等のレジスト４をパターン形成した
後、この状態で酸素プラズマ中にさらし、薄膜３
をエツチング加工する。この際、レジスト４も同
時にエツチングされるが、レジスト４の膜厚を充
分に厚くしておけばレジスト４の付着していない
部分の薄膜３が無くなつてもレジスト４はまだ残
存している。従つて酸素プラズマエツチングによ
り、第１図Ｄに示す如く、薄膜３はレジスト４の
パターンに即してエツチング成形されることとな
る。薄膜３上に残存するレジスト４は剥離液また
は適当な溶剤を用いて除去する。以上により第１
図Ｅに示す如く薄膜３がパターン化された感湿膜
３′を有する感湿素子が作製される。レジストと
しては、通常一般に用いられるフオトレジストの
他、酢酸ビニルポリマーなどの高分子材を印刷法
で形成したもの、金属の蒸着膜、金属板のマス
ク、ドライフイルムレジスト等を用いてもよい。
尚、酸素プラズマによるエツチング条件について
は、基板温度の上昇による感湿膜の変質に注意す
る必要がある。例えば、高周波出力はできるだけ
小さくし、ガスはArとO2又はN2とO2などの混合
ガスを使用するよりも酸素100％の方がエツチン
グ時間を短縮でき基板温度の上昇も小さくするこ
とができる。 Next, as shown in FIG.
Etching process. At this time, the resist 4 is also etched at the same time, but if the thickness of the resist 4 is made sufficiently thick, the resist 4 will still remain even if the thin film 3 in the area to which the resist 4 is not attached is gone. Therefore, by oxygen plasma etching, the thin film 3 is formed in accordance with the pattern of the resist 4, as shown in FIG. 1D. The resist 4 remaining on the thin film 3 is removed using a stripping solution or a suitable solvent. Based on the above, the first
A moisture sensitive element having a moisture sensitive film 3' in which the thin film 3 is patterned as shown in FIG. E is fabricated. As the resist, in addition to a commonly used photoresist, a polymer material such as vinyl acetate polymer formed by a printing method, a metal vapor deposition film, a metal plate mask, a dry film resist, etc. may be used.
Regarding the etching conditions using oxygen plasma, it is necessary to pay attention to deterioration of the moisture-sensitive film due to an increase in substrate temperature. For example, the high frequency output should be kept as low as possible, and using 100% oxygen gas would shorten the etching time and reduce the rise in substrate temperature, rather than using a mixed gas such as Ar and O 2 or N 2 and O 2. can.
第１図Ｅの感湿素子は必要に応じて素子単体ま
たは複数の素子群毎に基板１を分割して使用に供
する。 The moisture sensitive element shown in FIG. 1E is used by dividing the substrate 1 into individual elements or groups of elements as required.
上記製造工程に従つて感湿素子を作製する際の
より具体的な条件等について次に示す具体例で説
明する。 More specific conditions and the like when producing a moisture sensitive element according to the above manufacturing process will be explained using the following specific example.
具体例 １
ガラス基板上にマスク蒸着によつて下部電極パ
ターンを形成する。一方、ポリビニルアルコール
粉末を水に溶解し、該溶液を、前記パターン形成
した電極上に、スピンナーでコーテイングする。
乾燥・熱処理後ドライ・フイルム・レジストによ
る微細パターンを形成し、酸素プラズマエツチン
グを実施する。直径250mm、長さ300mmの円筒形プ
ラズマエツチング装置では、酸素圧：0.4Torr、
高周波出力：150Wに設定すると、約20分間で完
全にエツチングが完了する。エツチングが完了す
ると塩化メチレン等の溶剤で残存するレジストを
除去する。この後、エツチングされた感湿膜の上
に上部電極パターンをマスク蒸着等によつて形成
する。Specific Example 1 A lower electrode pattern is formed on a glass substrate by mask vapor deposition. Meanwhile, polyvinyl alcohol powder is dissolved in water, and the solution is coated on the patterned electrode using a spinner.
After drying and heat treatment, a fine pattern is formed using dry film resist, and oxygen plasma etching is performed. In a cylindrical plasma etching device with a diameter of 250 mm and a length of 300 mm, oxygen pressure: 0.4 Torr,
High frequency output: When set to 150W, etching will be completed in about 20 minutes. When etching is completed, the remaining resist is removed using a solvent such as methylene chloride. Thereafter, an upper electrode pattern is formed on the etched moisture sensitive film by mask vapor deposition or the like.
以上により感湿素子が作製される。上部電極と
下部電極を検出回路に接続することにより、周囲
湿度に対応した感湿膜のインピーダンス変化を検
出することができ、これによつて湿度が求められ
る。 Through the above steps, a moisture-sensitive element is manufactured. By connecting the upper and lower electrodes to a detection circuit, it is possible to detect the change in impedance of the moisture-sensitive membrane in response to the ambient humidity, thereby determining the humidity.
上記製造方法により得られた感湿素子の１例を
第２図に平面図で示す。ガラス基板１上に下部電
極２が面状に層設され、その上に感湿膜３′が堆
積されている。感湿膜３′上には面状の上部電極
５が形成され、上部電極５と下部電極２はその一
端縁が延設されてリード線６で検出回路に電気的
に接続されている。 An example of a moisture sensitive element obtained by the above manufacturing method is shown in a plan view in FIG. A lower electrode 2 is layered in a planar manner on a glass substrate 1, and a moisture sensitive film 3' is deposited thereon. A planar upper electrode 5 is formed on the moisture sensitive film 3', and one end of the upper electrode 5 and the lower electrode 2 is extended and electrically connected to a detection circuit by a lead wire 6.
具体例 ２
ガラス基板上に、蒸着した金属薄膜をフオトエ
ツチングで一対の対向した櫛歯状にパターン化
し、電極とする。以下実施例１と同様にポリビニ
ルアルコールを酸素プラズマエツチングにより、
エツチングした後、塩化メチレン等の溶剤でレジ
ストを除去する。Specific Example 2 A metal thin film deposited on a glass substrate is patterned into a pair of opposing comb teeth by photo-etching to form an electrode. Hereinafter, polyvinyl alcohol was treated with oxygen plasma etching in the same manner as in Example 1.
After etching, the resist is removed using a solvent such as methylene chloride.
上記製造方法により得られた感湿素子の１例を
第３図に平面図で示す。ガラス基板１上に１対の
櫛歯状電極２ａ，２ｂがパターン形成され、その
上に感湿膜３が層設されている。櫛歯状電極２
ａ，２ｂはともにリード線６で検出回路に電気的
に接続されている。 An example of a moisture sensitive element obtained by the above manufacturing method is shown in a plan view in FIG. A pair of comb-like electrodes 2a and 2b are patterned on a glass substrate 1, and a moisture-sensitive film 3 is layered thereon. Comb-shaped electrode 2
Both a and 2b are electrically connected to a detection circuit by a lead wire 6.
＜発明の効果＞
以上詳説した如く、本発明の感湿素子の製造方
法は、
感湿素子を非常に微小化することができる。<Effects of the Invention> As explained in detail above, the method for manufacturing a moisture-sensitive element of the present invention allows the moisture-sensitive element to be made extremely small.
１枚の基板上に、微小素子を多数作製するウ
エハー処理に適し、低コスト化ができる。 It is suitable for wafer processing in which a large number of microelements are manufactured on a single substrate, and costs can be reduced.
製作時における感湿膜剥離等の問題が解決さ
れ、素子製作の歩留り及び信頼性が向上する。 Problems such as moisture-sensitive film peeling during manufacturing are solved, and the yield and reliability of device manufacturing are improved.
等の非常に優れた技術的効果を奏する。It has excellent technical effects such as:
第１図は本発明の１実施例を示す感湿素子の製
造工程図である。第２図及び第３図はそれぞれ第
１図の製造工程を介して得られた感湿素子の平面
図である。
１……基板、２……電極、３……薄膜、３′…
…感湿膜、４……レジスト。
FIG. 1 is a diagram showing a manufacturing process of a moisture-sensitive element showing one embodiment of the present invention. 2 and 3 are plan views of the moisture sensing device obtained through the manufacturing process shown in FIG. 1, respectively. 1...Substrate, 2...Electrode, 3...Thin film, 3'...
...Moisture sensitive film, 4...Resist.
Claims (1)
ターン形成して酸素プラズマエツチング加工する
ことを特徴とする感湿素子の製造方法。1. A method for manufacturing a moisture-sensitive element, which comprises forming a pattern of a mask material on a moisture-sensitive film made of a polymeric material and subjecting it to oxygen plasma etching.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58077807A JPS59202053A (en) | 1983-04-30 | 1983-04-30 | Manufacture of humidity-sensitive element |
| US06/604,386 US4515653A (en) | 1983-04-30 | 1984-04-27 | Method for production of a moisture sensor |
| GB08410880A GB2138952B (en) | 1983-04-30 | 1984-04-27 | Producing electrical moisture sensors |
| DE19843416124 DE3416124A1 (en) | 1983-04-30 | 1984-04-30 | HUMIDITY SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58077807A JPS59202053A (en) | 1983-04-30 | 1983-04-30 | Manufacture of humidity-sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59202053A JPS59202053A (en) | 1984-11-15 |
| JPH0242430B2 true JPH0242430B2 (en) | 1990-09-21 |
Family
ID=13644284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58077807A Granted JPS59202053A (en) | 1983-04-30 | 1983-04-30 | Manufacture of humidity-sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59202053A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100965835B1 (en) | 2007-09-18 | 2010-06-28 | 전자부품연구원 | Fabricating method for capacitor type polymer sensor for measuring humidity and the same |
-
1983
- 1983-04-30 JP JP58077807A patent/JPS59202053A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59202053A (en) | 1984-11-15 |
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