JPH0242419A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH0242419A
JPH0242419A JP19326088A JP19326088A JPH0242419A JP H0242419 A JPH0242419 A JP H0242419A JP 19326088 A JP19326088 A JP 19326088A JP 19326088 A JP19326088 A JP 19326088A JP H0242419 A JPH0242419 A JP H0242419A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
silicide
wiring
gate electrode
channel area
made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19326088A
Inventor
Genshirou Kawachi
Nobutake Konishi
Akio Mimura
Kikuo Ono
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve working speed by using wiring made of silicide and to improve an element characteristic by a hydrogenization processing on an active matrix substrate by not forming a silicide on the surface of an area which functions as a gate electrode.
CONSTITUTION: On the active matrix substrate having a structure in which a scanning wiring is also the gate electrode of a thin-film transistor and the scanning wiring and a signal wiring are made of a silicide, the silicide is not formed in the part of the scanning wiring which functions as a gate electrode 4. That is to say, only a scanning wiring 101 and a signal wiring 102 are made of the silicide and the silicide does not exist in the upper part of the channel area of a thin-film semiconductor element 2. Consequently, even when the hydrogenization or fluorination processing is executed in order to activate the channel area, hydrogen or fluorine ions pass through the gate electrode and reach the channel area. Thus, the channel area is activated sufficiently and the element characteristic can be improved.
COPYRIGHT: (C)1990,JPO&Japio
JP19326088A 1988-08-02 1988-08-02 Semiconductor device and its manufacture Pending JPH0242419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19326088A JPH0242419A (en) 1988-08-02 1988-08-02 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19326088A JPH0242419A (en) 1988-08-02 1988-08-02 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH0242419A true true JPH0242419A (en) 1990-02-13

Family

ID=16304987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19326088A Pending JPH0242419A (en) 1988-08-02 1988-08-02 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH0242419A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149687A (en) * 1991-04-01 1992-09-22 United Technologies Corporation Method for making oriented bismuth and thallium superconductors comprising cold pressing at 700 MPa
JPH07111334A (en) * 1993-08-20 1995-04-25 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPH07218932A (en) * 1993-09-20 1995-08-18 Semiconductor Energy Lab Co Ltd Semiconductor device and its production
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6060725A (en) * 1993-03-12 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor using a semiconductor film
US6261875B1 (en) 1993-03-12 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Transistor and process for fabricating the same
US6281053B1 (en) 1997-12-09 2001-08-28 Nec Corporation Thin film transistor with reduced hydrogen passivation process time
US6413842B2 (en) 1993-02-15 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7488612B2 (en) 2003-12-29 2009-02-10 Lg Dsiplay Co., Ltd. Liquid crystal display device and fabricating method thereof

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149687A (en) * 1991-04-01 1992-09-22 United Technologies Corporation Method for making oriented bismuth and thallium superconductors comprising cold pressing at 700 MPa
US5962897A (en) * 1992-06-18 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7723788B2 (en) 1992-10-09 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7602020B2 (en) 1992-10-09 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6455875B2 (en) 1992-10-09 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having enhanced field mobility
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8017506B2 (en) 1992-10-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7952097B2 (en) 1993-02-15 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6413842B2 (en) 1993-02-15 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6261875B1 (en) 1993-03-12 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Transistor and process for fabricating the same
US6060725A (en) * 1993-03-12 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor using a semiconductor film
US6939749B2 (en) 1993-03-12 2005-09-06 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device that includes heating the gate insulating film
US6541313B2 (en) 1993-03-12 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Transistor and process for fabricating the same
JPH07111334A (en) * 1993-08-20 1995-04-25 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
US6867431B2 (en) 1993-09-20 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JPH07218932A (en) * 1993-09-20 1995-08-18 Semiconductor Energy Lab Co Ltd Semiconductor device and its production
US6049092A (en) * 1993-09-20 2000-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6281053B1 (en) 1997-12-09 2001-08-28 Nec Corporation Thin film transistor with reduced hydrogen passivation process time
US7488612B2 (en) 2003-12-29 2009-02-10 Lg Dsiplay Co., Ltd. Liquid crystal display device and fabricating method thereof
US7906781B2 (en) 2003-12-29 2011-03-15 Lg Display Co., Ltd. Liquid crystal display device and fabricating method thereof

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