JPH0239520A - Resist film thickness measuring method - Google Patents
Resist film thickness measuring methodInfo
- Publication number
- JPH0239520A JPH0239520A JP63190393A JP19039388A JPH0239520A JP H0239520 A JPH0239520 A JP H0239520A JP 63190393 A JP63190393 A JP 63190393A JP 19039388 A JP19039388 A JP 19039388A JP H0239520 A JPH0239520 A JP H0239520A
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- film thickness
- semiconductor wafer
- thickness
- reflected light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 9
- 238000005259 measurement Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、レジスト膜厚を測定する方法に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a method for measuring resist film thickness.
（従来の技術）
一般に半導体製造工程では、半導体ウェハに複数回のフ
すトリソゲラフイーを施して所定のパターンの転写を行
い、−枚の半導体ウェハ上に多数の半導体チップを形成
するが、近年半導体装置は高集積化される傾向にあり、
そのパターンも微細化される傾向にある。(Prior Art) In general, in the semiconductor manufacturing process, a predetermined pattern is transferred by performing film lithography on a semiconductor wafer multiple times to form a large number of semiconductor chips on one semiconductor wafer. tends to be highly integrated,
There is also a tendency for the patterns to become finer.
一方、フォトリソグラフィーによって微細パターンを正
確に転写するためには、レジスト膜を正確に所定膜厚に
形成する必要があるので、コーティング装置の改良も進
められ、現在では、膜厚のばら付きを４〜５ｎｍ程度の
誤差範囲内とすることのできるスピンコーティング装置
が開発されている。On the other hand, in order to accurately transfer fine patterns using photolithography, it is necessary to accurately form a resist film to a predetermined thickness, so improvements have been made to coating equipment, and it is now possible to reduce variations in film thickness by four methods. A spin coating apparatus that can achieve an error within an error range of about 5 nm has been developed.
また、このようなレジスト膜厚を測定する方法として、
基板表面に光を照射して、基板表面およびレジスト膜表
面からの反射光を検出し、レジスト膜厚を測定する方法
が開発されている。In addition, as a method for measuring such resist film thickness,
A method has been developed in which the resist film thickness is measured by irradiating the substrate surface with light and detecting the reflected light from the substrate surface and the resist film surface.
（発明が解決しようとする課題）
しかしながら、上記説明のレジスト膜厚の測定方法では
、下地が平坦でなければレジスト膜厚を測定することが
できない。一方、半導体ウェハに半導体チップを形成す
る工程においては、複数回のフォトリソグラフィー工程
を行うが、この中で、下地が平坦な場合は、多くの場合
最初のフォトリソグラフィー工程だけであり、任意のポ
イレトでレジスト膜厚の測定を行えるのは、この最初の
フォトリソグラフィー工程だけということになる。(Problems to be Solved by the Invention) However, with the resist film thickness measuring method described above, the resist film thickness cannot be measured unless the base is flat. On the other hand, in the process of forming semiconductor chips on semiconductor wafers, multiple photolithography processes are performed, but in many cases, only the first photolithography process is performed when the base is flat; This means that it is only during this first photolithography process that the resist film thickness can be measured.
このため、従来は、製造ラインにレジスト膜厚を測定す
る装置等を組み込んで、レジスト膜厚を測定するような
ことは実際上行われていないが、周囲の温度の変化等に
よって、スピンコーティング装置等によって形成される
レジストの膜厚は変化する可能性があり、レジストの膜
厚の変化により、形成されるパターンの線幅が変化する
可能性がある。For this reason, in the past, it has not been practically done to measure the resist film thickness by incorporating a resist film thickness measuring device into the manufacturing line, but due to changes in ambient temperature etc., spin coating equipment etc. The thickness of the resist formed by the method may change, and the line width of the pattern formed may change due to the change in the thickness of the resist.
本発明は、かかる従来の事情に対処してなされたもので
、半導体製造の各工程において半導体ウェハ上に形成さ
れたレジスト膜の膜厚を測定することのできるレジスト
膜厚の測定方法を提供しようとするものである。The present invention has been made in response to such conventional circumstances, and it is an object of the present invention to provide a resist film thickness measuring method that can measure the film thickness of a resist film formed on a semiconductor wafer in each process of semiconductor manufacturing. That is.
［発明の構成］
（課題を解決するための手段）
すなわち本発明は、光を照射し、この光の反射光を検出
して半導体ウェハ表面に形成されたレジスト膜の膜厚を
測定するにあたり、前記半導体ウェハ周縁部の半導体チ
ップが形成されていない部位からの前記反射光を検出し
て前記レジスト膜の膜厚を測定することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, the present invention includes the steps of emitting light and detecting the reflected light of the light to measure the thickness of a resist film formed on the surface of a semiconductor wafer. The method is characterized in that the thickness of the resist film is measured by detecting the reflected light from a portion of the peripheral edge of the semiconductor wafer where no semiconductor chip is formed.
（作 用）
上記構成の本発明のレジスト膜厚の測定方法では、半導
体ウェハ周縁部の半導体チップが形成されていない部位
、すなわち下地が平らな部位からの反射光を検出してレ
ジスト膜の膜厚をａｌｌ＋定する。したがって、半導体
製造の各工程において半導体ウェハ上に形成されたレジ
スト膜の膜厚を測定することかできる。(Function) In the method for measuring resist film thickness of the present invention having the above configuration, reflected light from a region on the peripheral edge of a semiconductor wafer where no semiconductor chips are formed, that is, a region with a flat base, is detected and the thickness of the resist film is measured. Set the thickness to all+. Therefore, it is possible to measure the thickness of a resist film formed on a semiconductor wafer in each step of semiconductor manufacturing.
（実施例） 以下、本発明方法の実施例を図面を参照して説明する。(Example) Hereinafter, embodiments of the method of the present invention will be described with reference to the drawings.
半導体ウェハ１は、はぼ円形に形成されており、その周
縁の一部を切除する如くオリエンテーションフラット２
が設けられている。また、半導体ウェハ１表面には、製
造途中のほぼ矩形の半導体チップ３が多数形成されてい
る。また、円形の半導体ウェハ１に矩形の半導体チップ
３が並べて設けられているため、これらの半導体チップ
３が形成された領域の周囲には、半導体チップが形成さ
れていない余剰領域４が形成されている。この実施例で
は、上記余剰領域４のうち、例えばオリエンテーンヨン
フラット２の近傍に形成された余剰領域４ａからの反射
光を測定してレジスト膜厚のａ＋＋＋定を行う。The semiconductor wafer 1 is formed into a roughly circular shape, and an orientation flat 2 is formed by cutting out a part of the periphery of the semiconductor wafer 1.
is provided. Further, on the surface of the semiconductor wafer 1, a large number of substantially rectangular semiconductor chips 3 which are in the process of being manufactured are formed. Furthermore, since the rectangular semiconductor chips 3 are arranged side by side on the circular semiconductor wafer 1, an extra region 4 where no semiconductor chips are formed is formed around the region where these semiconductor chips 3 are formed. There is. In this embodiment, the a+++ determination of the resist film thickness is performed by measuring the reflected light from the surplus region 4a formed in the vicinity of the orientation flat 2 among the surplus regions 4, for example.
すなわち、第２図に示すように、半導体ウェハ１は、ス
ピンコーティング装置のウェハ載置台１０上に載置され
ており、このスピンコーティング装置には、膜厚測定装
置１１が配設されている。That is, as shown in FIG. 2, the semiconductor wafer 1 is placed on a wafer mounting table 10 of a spin coating apparatus, and the spin coating apparatus is provided with a film thickness measuring device 11.
なお、膜厚測定装置１１は、例えば光源からの光を、レ
ジスト膜が感光しないような波長、例えば５８０ｎｍ以
上の波長とするフィルタを介して光ファイバー１２の先
端から所定部位に例え−ば直径２ＩＩＩＩ１１程度のビ
ームとして照射し、この光ファイバー１２の先端から入
射した反射光のうちフィルタによって選択した所定波長
の光のみを受光素子に入力させ電気信号に変換した後、
増幅器、Ａ／Ｄ変換器を経て演算器に入力して膜厚をΔ
ｐＩ定するよう構成されている。The film thickness measuring device 11 transmits light from a light source to a predetermined portion from the tip of the optical fiber 12 through a filter that makes the resist film not sensitive to the wavelength, such as a wavelength of 580 nm or more. After irradiating the optical fiber 12 as a beam, only the light with a predetermined wavelength selected by the filter among the reflected light incident from the tip of the optical fiber 12 is input to the light receiving element and converted into an electrical signal.
The film thickness is calculated by inputting it to the arithmetic unit via the amplifier and A/D converter.
It is configured to determine pI.
また、光ファイバー１２の先端近傍には、例えば対向す
る如く設けられた受光素子および発光素子等からなり、
半導体ウェハ１のオリエンテーンヨンフラット２を検出
する位置検出装置１３が設けられている。In addition, near the tip of the optical fiber 12, for example, a light receiving element and a light emitting element are provided facing each other.
A position detection device 13 for detecting the orientation flat 2 of the semiconductor wafer 1 is provided.
そして、ノズル１４からコーテイング液を供給してコー
テイング液を塗布する前に、まず膜厚ａ］定装置１１に
よるリファレンス測定を行う。この時、例えば、半導体
ウェハ１を第１図に示す矢印の方向にゆっくりと回転さ
せ、位置検出装置１３により例えばオリエンテーション
フラット２の端部（点Ｘ）を検出した時点で光ファイバ
ー１２が半導体ウェハ１の余剰領域４ａの上部に位置す
るよう光ファイバー１２と位置検出装置１３との位置関
係を予め調節しておく。そして、位置検出装置１３の検
出信号に応じ、膜厚測定装置１１における反射光信号の
読み込ろを行い、リファレンスとして記憶しておく。Then, before applying the coating liquid by supplying the coating liquid from the nozzle 14, a reference measurement is first performed using the film thickness determination device 11. At this time, for example, the semiconductor wafer 1 is slowly rotated in the direction of the arrow shown in FIG. The positional relationship between the optical fiber 12 and the position detection device 13 is adjusted in advance so that the optical fiber 12 and the position detection device 13 are located above the surplus area 4a. Then, according to the detection signal of the position detection device 13, the reflected light signal is read in the film thickness measurement device 11 and stored as a reference.
この後、膜厚測定装置１１の光ファイバー１２および位
置検出装置１３を半導体ウェハ１の近傍から移動させ、
レジスト液が付着しないように回避させた状態で、ノズ
ル１４からレジスト液を供給するとともに、駆動制御装
置１５および駆動装置１６により、半導体ウェハ１を高
速回転させて半導体ウェハ１表面に均一にレジスト液を
拡げ、レジスト膜を形成する。After that, the optical fiber 12 and position detection device 13 of the film thickness measurement device 11 are moved from the vicinity of the semiconductor wafer 1,
The resist solution is supplied from the nozzle 14 in a state where the resist solution is prevented from adhering, and the drive control device 15 and the drive device 16 rotate the semiconductor wafer 1 at high speed to uniformly apply the resist solution to the surface of the semiconductor wafer 1. to form a resist film.
しかる後、再び膜厚測定装置１１の光ファイバー１２お
よび位置検出装置１３を半導体ウエノ＼１の近傍に移動
させて、前述のリファレンス’４ｐ１定と同様にして半
導体ウェハ１の余剰領域４ａの部位でかつウェハＩＤ等
の段差の無い部位からの反射光信号を読み取り、メモリ
内に記憶されたリファレンスＪｌｌｌ定の結果と比較し
てレジスト膜厚を算出する。Thereafter, the optical fiber 12 of the film thickness measuring device 11 and the position detecting device 13 are moved to the vicinity of the semiconductor wafer \1 again, and a portion of the surplus area 4a of the semiconductor wafer 1 is measured in the same manner as in the reference '4p1 determination described above. A reflected light signal from a portion without a step such as a wafer ID is read and compared with a reference Jlll determination result stored in a memory to calculate the resist film thickness.
すなわち、この実施例のレジスト膜厚の測定方法では、
位置検出装置１３によってオリエンテーションフラット
２を検出することにより、膜厚測定装置１１で半導体ウ
ェハ１の半導体チップが形成されていない余剰領域４ａ
からの反射光を測定し、レジスト膜厚をｉ９１定するの
で、半導体製造の各工程において半導体ウェハ１上に形
成されたレジスト膜の膜厚を測定することができる。That is, in the resist film thickness measurement method of this example,
By detecting the orientation flat 2 with the position detection device 13, the film thickness measurement device 11 detects the surplus region 4a of the semiconductor wafer 1 where no semiconductor chips are formed.
Since the resist film thickness is determined by measuring the reflected light from the resist film i91, it is possible to measure the film thickness of the resist film formed on the semiconductor wafer 1 in each step of semiconductor manufacturing.
したがって、例えばこの測定データをホストコンピュー
タ１７に送出し、ホストコンピュータ１７から駆動制御
装置１５に指令を送ってスピンコーティング装置のスピ
ン速度を調節すれば、レジスト膜の膜厚を所定膜厚に制
御すること等も可能となり、高品質な半導体チップの製
造が可能となる。Therefore, for example, by sending this measurement data to the host computer 17 and sending a command from the host computer 17 to the drive control device 15 to adjust the spin speed of the spin coating device, the thickness of the resist film can be controlled to a predetermined thickness. This makes it possible to manufacture high-quality semiconductor chips.
なお、上記実施例では、コーティング装置に膜厚ｌ１Ｉ
ＩＪ定装置１１を組み込んだ例について説明したが、例
えば第３図に示すように、センダー２０゜コーティング
装置２１、ホットプレート（加熱乾燥装置）２２、レシ
ーバ２３等が連続して設けられたインライン型の処理装
置の場合は、コーティング装置２１の前後に、前述した
ような載置台１０および膜厚測定装置１１等からなる測
定装置２４を設け、コーティング前後に反射光を測定し
て膜厚を測定するよう構成することもできる。In the above embodiment, the coating device has a film thickness of l1I.
Although we have described an example in which the IJ constant device 11 is incorporated, for example, as shown in FIG. In the case of the processing apparatus, a measuring device 24 consisting of the above-mentioned mounting table 10, film thickness measuring device 11, etc. is provided before and after the coating device 21, and the film thickness is measured by measuring reflected light before and after coating. It can also be configured like this.
また、第４図に示すように、中央部に搬送用ロボット３
０が配置され、その周囲にコーティング装置３１、ホッ
トプレート３２、現像装置３３等が設けられ、搬送用ロ
ボット３０により、上記各装置に対して半導体ウェハを
任意にロード・アンロード可能に構成された処理装置で
あれば、載置台〕０および膜厚Ａ１１ｌ定装置１１等か
らなる測定装置３４を１台だけ設け、１台の測定装置３
４でコーティングの前後に反射光を測定して膜厚を測定
するよう構成することもできる。In addition, as shown in Fig. 4, there is a transport robot 3 in the center.
A coating device 31, a hot plate 32, a developing device 33, etc. were provided around the device, and a transfer robot 30 was configured to allow semiconductor wafers to be loaded and unloaded into each of the devices as desired. If it is a processing device, only one measuring device 34 consisting of a mounting table] 0, a film thickness A11l determining device 11, etc. is provided, and one measuring device 3 is installed.
In step 4, the film thickness can also be determined by measuring the reflected light before and after coating.
［発明の効果］
上述のように、本発明のレジスト膜厚のＡｌｌｌｌ決方
法れば、半導体製造の各工程において半導体ウェハ上に
形成されたレジスト膜の膜厚を測定することができる。[Effects of the Invention] As described above, by using the method for determining resist film thickness of the present invention, it is possible to measure the thickness of a resist film formed on a semiconductor wafer in each step of semiconductor manufacturing.
第１図は本発明の一実施例方法を説明するための半導体
ウェハの平面図、第２図は本発明の一実施例方法を説明
するための測定装置の構成図、第３図および第４図は測
定装置の配列例を示す図である。
１・・・・・・半導体ウェハ、２・・・・・・オリエン
テーションフラット、３・・・・・・半導体チップ、４
・・・・・・余剰領域、４ａ・・・・・反射光を測定す
る余剰領域、１２・・・・・・膜厚計１定装置゛の光フ
ァイバー １３・・・・・・位置検出装置。FIG. 1 is a plan view of a semiconductor wafer for explaining a method according to an embodiment of the present invention, FIG. 2 is a configuration diagram of a measuring device for explaining a method according to an embodiment of the present invention, and FIGS. The figure shows an example of the arrangement of measuring devices. 1... Semiconductor wafer, 2... Orientation flat, 3... Semiconductor chip, 4
... Surplus area, 4a... Surplus area for measuring reflected light, 12... Optical fiber of film thickness gauge 1 determination device. 13... Position detection device.
Claims (1)
ェハ表面に形成されたレジスト膜の膜厚を測定するにあ
たり、 前記半導体ウェハ周縁部の半導体チップが形成されてい
ない部位からの前記反射光を検出して前記レジスト膜の
膜厚を測定することを特徴とするレジスト膜厚の測定方
法。(1) When measuring the thickness of a resist film formed on the surface of a semiconductor wafer by irradiating light and detecting the reflected light of this light, A method for measuring resist film thickness, comprising: measuring the thickness of the resist film by detecting the reflected light.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63190393A JPH0239520A (en) | 1988-07-29 | 1988-07-29 | Resist film thickness measuring method |
| KR1019890010785A KR0139814B1 (en) | 1988-07-29 | 1989-07-29 | Method and apparatus for manufacturing a simiconductor device |
| US07/921,598 US5393624A (en) | 1988-07-29 | 1992-08-03 | Method and apparatus for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63190393A JPH0239520A (en) | 1988-07-29 | 1988-07-29 | Resist film thickness measuring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0239520A true JPH0239520A (en) | 1990-02-08 |
Family
ID=16257411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63190393A Pending JPH0239520A (en) | 1988-07-29 | 1988-07-29 | Resist film thickness measuring method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0239520A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747201A (en) * | 1990-04-13 | 1998-05-05 | Hitachi, Ltd. | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
| US5939130A (en) * | 1996-05-28 | 1999-08-17 | Tokyo Electron Limited | Coating film forming method and coating film forming apparatus |
| KR100297399B1 (en) * | 1995-11-17 | 2001-10-22 | 김덕중 | Device and method for manufacturing liquid crystal alignment film |
| CN105651192A (en) * | 2016-04-12 | 2016-06-08 | 广州市尤特新材料有限公司 | Detection method and system of surface thickness and planeness of rotary target |
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| JPS6115072B2 (en) * | 1975-11-27 | 1986-04-22 | Basf Ag | |
| JPS62235734A (en) * | 1986-04-04 | 1987-10-15 | Nec Corp | Manufacture of semiconductor device |
| JPS63131517A (en) * | 1986-11-20 | 1988-06-03 | Mitsubishi Electric Corp | Coating method |
-
1988
- 1988-07-29 JP JP63190393A patent/JPH0239520A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115072B2 (en) * | 1975-11-27 | 1986-04-22 | Basf Ag | |
| JPS62235734A (en) * | 1986-04-04 | 1987-10-15 | Nec Corp | Manufacture of semiconductor device |
| JPS63131517A (en) * | 1986-11-20 | 1988-06-03 | Mitsubishi Electric Corp | Coating method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747201A (en) * | 1990-04-13 | 1998-05-05 | Hitachi, Ltd. | Controlling method of forming thin film, system for said controlling method, exposure method and system for said exposure method |
| KR100297399B1 (en) * | 1995-11-17 | 2001-10-22 | 김덕중 | Device and method for manufacturing liquid crystal alignment film |
| US5939130A (en) * | 1996-05-28 | 1999-08-17 | Tokyo Electron Limited | Coating film forming method and coating film forming apparatus |
| CN105651192A (en) * | 2016-04-12 | 2016-06-08 | 广州市尤特新材料有限公司 | Detection method and system of surface thickness and planeness of rotary target |
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