JPH0234956A - Method for breaking semiconductor substrate - Google Patents

Abstract

PURPOSE:To eliminate a damage, a scratch, and to improve characteristics, quality by impregnating a semiconductor substrate with deionized water in grooves formed in advance when the substrate is broken in necessary size, and then solidifying it. CONSTITUTION:The surface of a semiconductor substrate 1 is sawed in depth of 80% of the thickness of the substrate 1 at a necessary pitch by a sawing machine to form grooves 2. Then, the substrate 1 adheres to a polyester insulat ing film 3 by utilizing static electricity charged at the film, and deionized water 4 is poured from the surface of the substrate 1 in the grooves 2. The water 4 presented in the grooves 2 and on the surface is quickly refrigerated to ice 5. Cracks 6 are generated from the end of the bottom toward the bottom by the volumetric expansion of the solidified water for breaking. Thus, since no scratch, damage are introduced to the surface and interior of the substrate 1, characteristics and quality are increased in stability.

Description

[Detailed description of the invention] Industrial applications The present invention relates to a method for breaking a semiconductor substrate.

BACKGROUND ART To break a semiconductor substrate, grooves are formed on the surface of the semiconductor substrate at a predetermined pitch in a direction perpendicular to the surface of the semiconductor substrate using a sawing machine such as a dicing saw.

The depth of the groove at this time is about 80% of the thickness of the semiconductor substrate. Thereafter, the semiconductor substrate in which the grooves have been formed by the aforementioned sawing is attached onto the polyester film using the static electricity of the thin insulating film made of polyester or the like.

A rubber-based cylindrical jig called a roller is used to press and rotate the surface of the semiconductor substrate attached to the above-mentioned polyester to break it.

The problem that the invention aims to solve: However, since this roller presses the surface of the semiconductor substrate, it can damage the protective film on the semiconductor surface, and also introduce stress inside, which can cause problems in terms of quality. There is.

Means for Solving the Problems To summarize, the present invention includes a step of infiltrating deionized water into pre-formed grooves and post-solidifying it when breaking a semiconductor substrate into a required size.

According to the present invention, when breaking a semiconductor substrate into required dimensions, deionized water is infiltrated into the pre-formed grooves, and the above-mentioned deionized water is solidified, thereby making use of its volumetric expansion to break the semiconductor substrate into required dimensions. There is no need to press the entire surface of the board, and there is no damage or scratches (it can be greatly improved in terms of characteristics and quality).

Example Embodiments of the present invention will be described below with reference to the drawings.

As shown in FIGS. 1 to 3, in the breaking process of a semiconductor substrate, first, as shown in FIG. Perform sawing to form grooves 2.

Thereafter, a semiconductor substrate is attached using static electricity charged on the polyester insulating film 3 shown in FIG. Next, deionized water 4 having a water quality of 10 MΩ or more is poured into the sawn groove from the surface of the semiconductor substrate. The reason why this water quality is required to be 10 MΩ or more is to prevent static electricity from escaping to the outside through the water.

Next, as shown in FIG. 3, the deionized water 4 present in the grooves and on the surface is rapidly frozen to form ice 5. The freezing temperature at this time should not be lower than -50°C. Due to the volumetric expansion upon solidification, cracks 6 were formed from the bottom of the groove toward the bottom surface of the substrate, making it possible to break, and there were no surface scratches.

Effects of the Invention According to the present invention, deionized water is infiltrated into the grooves to be broken and the water is solidified so that the volumetric expansion causes cracks in the substrate, so there is no need to press the substrate from the surface with a roller or the like. As a result, no scratches or damage are introduced to the surface or inside of the substrate, resulting in increased stability in terms of characteristics and quality, which is highly effective.

[Brief explanation of the drawing]

FIGS. 1 to 3 are sectional views showing an embodiment of the present invention in the order of steps. 1... Semiconductor substrate, 2... Groove, 3...
...Polyester insulating film, 4...Deionized water, 5...Ice, 6...Crack. Name of agent: Patent attorney Shigetaka Awano and 1 other person

Claims (2)

[Claims] (1) After the semiconductor substrate surface is sawed to a predetermined size and depth, the aforementioned substrate surface is covered with a solidifying liquid, and the liquid is solidified to break the aforementioned substrate. A method for breaking a semiconductor substrate, characterized by: (2) The method for breaking a semiconductor substrate according to claim 1, wherein deionized water is infiltrated into grooves sawn on the surface of the semiconductor substrate.