JPH0234947A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0234947A
JPH0234947A JP63186202A JP18620288A JPH0234947A JP H0234947 A JPH0234947 A JP H0234947A JP 63186202 A JP63186202 A JP 63186202A JP 18620288 A JP18620288 A JP 18620288A JP H0234947 A JPH0234947 A JP H0234947A
Authority
JP
Japan
Prior art keywords
aluminum
bonding
bonding pad
semiconductor device
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63186202A
Other languages
Japanese (ja)
Inventor
Kiyoshi Nakamura
清 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63186202A priority Critical patent/JPH0234947A/en
Publication of JPH0234947A publication Critical patent/JPH0234947A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent exposure of aluminum by providing a metallic layer formed so that the exposed part is smaller than the diameter of the ball of a bonding pad to be bonded, and a corrosion resistant layer formed on the periphery of the exposed part of the metallic layer. CONSTITUTION:A material which is scarcely corroded with moisture or the like such as a polysilicon layer 1 is so formed on the aluminum of a bonding pad 4' formed integrally with aluminum wiring 4 as to surround the exposed part, and a surface protective film 3 is formed on the wiring 4. The size of the exposed part of the pad 4' is formed to be smaller than the diameter 5 of the ball to be bonded. Thus, a semiconductor device having the pad in which aluminum is not exposed at all by bonding can be realized.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にボンディングパッドの
構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the structure of a bonding pad.

〔従来の技術〕[Conventional technology]

従来この種の半導体装置は、第２図（ａ）に示すように
ボンディングパッド部４′が表面保護膜３を開口して形
成される。ボンディングパッド部４′は、ボンディング
線２を介して半導体装置外部と電気的に接続されている
。このとき、ボンディングパッド部４′のアルミニウム
は、第２図（ｂ）に示すようにボンディングのボール径
より大きく形成されているため、ボールの周囲に露出し
ている。また、ボンディングパッド部４′は表面保護膜
３下に形成された内部回路に続くアルミニウム配線４と
同体で形成されている。Conventionally, in this type of semiconductor device, a bonding pad portion 4' is formed by opening a surface protection film 3, as shown in FIG. 2(a). The bonding pad section 4' is electrically connected to the outside of the semiconductor device via the bonding line 2. At this time, the aluminum of the bonding pad portion 4' is formed to be larger than the diameter of the bonding ball, as shown in FIG. 2(b), and is therefore exposed around the ball. Further, the bonding pad portion 4' is formed integrally with the aluminum wiring 4 which continues to the internal circuit formed under the surface protection film 3.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置の内部回路は不純物（水分等
）で腐蝕しやすいアルミニウムで形成されているが表面
保護膜で保護されている。しかし、ボンディング部分は
ボンディング線との接続のため、保護膜は開口されてい
る。そのため、この部分はボンディング部分を除きアル
ミニウムがむきだしになり、例えば耐湿性試験において
第３図（ａ）　、　（ｂ）に示すようにアルミニウムが
腐蝕し、内部回路と断線してしまうという欠点があった
。The internal circuit of the conventional semiconductor device described above is made of aluminum, which is easily corroded by impurities (moisture, etc.), but is protected by a surface protective film. However, since the bonding portion is connected to the bonding line, the protective film is opened. Therefore, the aluminum in this part is exposed except for the bonding part, and this has the disadvantage that, for example, in a moisture resistance test, the aluminum corrodes and the wire breaks from the internal circuit, as shown in Figures 3(a) and (b). Ta.

〔目的〕〔the purpose〕

本発明の目的は、不純物、特に水分等の影響でボンディ
ングパッド部のアルミニウムが腐食する欠点を解決し、
良好な電気的接続が可能とするボンディングパッド部を
有する半導体装置を提供することにある。The purpose of the present invention is to solve the drawback that aluminum in the bonding pad part corrodes due to the influence of impurities, especially moisture, etc.
An object of the present invention is to provide a semiconductor device having a bonding pad portion that enables good electrical connection.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置のボンディングパッドはボンディン
グのボール径より小さいアルミニウム露出部分とその露
出部を取り囲む耐腐食層を有している。そのため、ボン
ディングのボールは、アルミニウム露出部分を覆うよう
に接続され、ボンディングパッド部でアルミニウムがボ
ールの周囲に露出することを防止する。The bonding pad of the semiconductor device of the present invention has an exposed aluminum portion smaller than the bonding ball diameter and a corrosion-resistant layer surrounding the exposed portion. Therefore, the bonding ball is connected so as to cover the exposed aluminum portion, thereby preventing aluminum from being exposed around the ball at the bonding pad portion.

〔実施例〕〔Example〕

第１図は本発明の一実施例の縦断面図である。 FIG. 1 is a longitudinal sectional view of one embodiment of the present invention.

アルミニウム配線４と同体形成されたボンディングパッ
ド部４′のアルミニウム上に露出部を取り囲むように水
分等で腐蝕しにくい材料、たとえばポリシリコン層が形
成されている。アルミニウム配線４上には表面保護膜３
が形成されている。ボンディングパッド部４′のアルミ
ニウム！出部の大きさは、ボンディングのボール径５よ
りも小さく形成されているので、ボンディングによって
アルミニウムが全く露出しないボンディングパッドを有
する半導体装置を実現できる。A material that is not easily corroded by moisture, such as a polysilicon layer, is formed on the aluminum of the bonding pad portion 4' formed integrally with the aluminum wiring 4 so as to surround the exposed portion. A surface protective film 3 is provided on the aluminum wiring 4.
is formed. Aluminum bonding pad part 4'! Since the size of the protrusion is smaller than the bonding ball diameter 5, it is possible to realize a semiconductor device having a bonding pad in which aluminum is not exposed at all by bonding.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明はボンディングパッドをポリ
シリコン層とアルミニウムで形成し、アルミニウムの露
出部分はボンディングのボール径より小さく形成し、ボ
ンディングを施すことによりアルミニウムの露出を全く
なくすことが出来、耐湿性試験に強い半導体装置を実現
することができる。As explained above, in the present invention, the bonding pad is formed of a polysilicon layer and aluminum, the exposed part of the aluminum is formed smaller than the diameter of the bonding ball, and by performing bonding, it is possible to completely eliminate the exposed aluminum, and it is moisture resistant. A semiconductor device that is resistant to performance tests can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明のボンディングパッドの縦断面図、第２
図（ａ）は従来のボンディングパッドの平面図、第２図
（ｂ）は第２図（ａ）のＡ−Ａ’断面図、第２図（ｃ）
は第２図（ａ）のＥ−Ｂ’断面図、第３図（ａ）は従来
のボンディングパッドが耐湿性試験で不良となった従来
のボンディングパッドの平面図、第３図（ｂ）は、第３
図（ａ）のＡ−Ａ’断面図である。 １・・・・・・ポリシリコン層、２・・・・・・ボンデ
ィング線、３・・・・・・表面保護膜、４・・・・・・
アルミニウム配線、４′・・・・・・ボンディングパッ
ド部、５・・・・・・ボンディングのボール径、６・・
・・・・不良箇所。 代理人　弁理士　　内　原　　晋 ＄　Ｉ　図 ＄３　図FIG. 1 is a longitudinal sectional view of the bonding pad of the present invention, and FIG.
Figure (a) is a plan view of a conventional bonding pad, Figure 2 (b) is a sectional view taken along line AA' in Figure 2 (a), Figure 2 (c)
is a sectional view taken along the line E-B' in Figure 2(a), Figure 3(a) is a plan view of a conventional bonding pad that failed in the moisture resistance test, and Figure 3(b) is a cross-sectional view of the conventional bonding pad that failed in the moisture resistance test. , 3rd
It is an AA' sectional view of figure (a). 1... Polysilicon layer, 2... Bonding line, 3... Surface protective film, 4...
Aluminum wiring, 4'...Bonding pad part, 5...Bonding ball diameter, 6...
...Defective area. Agent Patent Attorney Susumu Uchihara $ I Figure $3 Figure

Claims (1)

【特許請求の範囲】[Claims] 半導体装置上に形成されたボンディングパッドにおいて
、該ボンディングパッドに施されるボンディングのボー
ル径よりも露出部分が小さく形成された金属層と、該金
属層の露出部分の周囲に形成された耐腐食層とを有する
ことを特徴とする半導体装置。In a bonding pad formed on a semiconductor device, a metal layer having an exposed portion smaller than the diameter of a bonding ball applied to the bonding pad, and a corrosion-resistant layer formed around the exposed portion of the metal layer. A semiconductor device comprising:
JP63186202A 1988-07-25 1988-07-25 Semiconductor device Pending JPH0234947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63186202A JPH0234947A (en) 1988-07-25 1988-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63186202A JPH0234947A (en) 1988-07-25 1988-07-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0234947A true JPH0234947A (en) 1990-02-05

Family

ID=16184163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63186202A Pending JPH0234947A (en) 1988-07-25 1988-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0234947A (en)

Similar Documents

Publication Publication Date Title
JPH0234947A (en) Semiconductor device
JPH03153048A (en) Semiconductor device
JP3077315B2 (en) Semiconductor device
JPS6118862B2 (en)
JPS62224037A (en) Semiconductor device
JPS62216339A (en) Semiconductor device and manufacture thereof
JPS6181658A (en) Plastic package type semiconductor device
KR920013688A (en) Semiconductor device and manufacturing method
JPH01214126A (en) Semiconductor device
KR0158618B1 (en) Pattern of semiconductor chip
JP2994167B2 (en) Semiconductor device
JPH02125632A (en) Semiconductor device
JP3354716B2 (en) Method for manufacturing semiconductor integrated circuit device
JPH03227539A (en) Semiconductor device
JPH03278552A (en) Semiconductor integrated circuit device
JPS6122659A (en) Semiconductor device
JPH023943A (en) Semiconductor integrated circuit device
JPH02129936A (en) Semiconductor device
JPH02285649A (en) Semiconductor device
JPH02137331A (en) Semiconductor device
JPS60242657A (en) Semiconductor device
JPS6045048A (en) Semiconductor device
JPS6289349A (en) Semiconductor device
JPH02180035A (en) Semiconductor integrated circuit device
JPH05206198A (en) Semiconductor device