JPH0234017B2 - - Google Patents
Info
- Publication number
- JPH0234017B2 JPH0234017B2 JP58098828A JP9882883A JPH0234017B2 JP H0234017 B2 JPH0234017 B2 JP H0234017B2 JP 58098828 A JP58098828 A JP 58098828A JP 9882883 A JP9882883 A JP 9882883A JP H0234017 B2 JPH0234017 B2 JP H0234017B2
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- tellurium
- alloy
- photoreceptor
- oxygen concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 108091008695 photoreceptors Proteins 0.000 claims description 42
- 229910052711 selenium Inorganic materials 0.000 claims description 39
- 239000011669 selenium Substances 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 38
- 229910052760 oxygen Inorganic materials 0.000 claims description 38
- 239000001301 oxygen Substances 0.000 claims description 38
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 34
- 229910001215 Te alloy Inorganic materials 0.000 claims description 27
- 229910052714 tellurium Inorganic materials 0.000 claims description 25
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 27
- 229910045601 alloy Inorganic materials 0.000 description 18
- 239000000956 alloy Substances 0.000 description 18
- 229940082569 selenite Drugs 0.000 description 11
- MCAHWIHFGHIESP-UHFFFAOYSA-L selenite(2-) Chemical compound [O-][Se]([O-])=O MCAHWIHFGHIESP-UHFFFAOYSA-L 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910001370 Se alloy Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000003947 neutron activation analysis Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005194 fractionation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58098828A JPS59223436A (ja) | 1983-06-03 | 1983-06-03 | セレンテルル合金電子写真用感光体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58098828A JPS59223436A (ja) | 1983-06-03 | 1983-06-03 | セレンテルル合金電子写真用感光体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59223436A JPS59223436A (ja) | 1984-12-15 |
| JPH0234017B2 true JPH0234017B2 (fr) | 1990-08-01 |
Family
ID=14230145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58098828A Granted JPS59223436A (ja) | 1983-06-03 | 1983-06-03 | セレンテルル合金電子写真用感光体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59223436A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61156135A (ja) * | 1984-12-28 | 1986-07-15 | Nippon Mining Co Ltd | 電子写真感光体 |
| JPS62278565A (ja) * | 1986-05-27 | 1987-12-03 | Fuji Xerox Co Ltd | 電子写真感光体用セレンテルル材料 |
| JP2008227036A (ja) * | 2007-03-12 | 2008-09-25 | Fujifilm Corp | 放射線平面検出器 |
-
1983
- 1983-06-03 JP JP58098828A patent/JPS59223436A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59223436A (ja) | 1984-12-15 |
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