JPH0231076Y2 - - Google Patents
Info
- Publication number
- JPH0231076Y2 JPH0231076Y2 JP8658786U JP8658786U JPH0231076Y2 JP H0231076 Y2 JPH0231076 Y2 JP H0231076Y2 JP 8658786 U JP8658786 U JP 8658786U JP 8658786 U JP8658786 U JP 8658786U JP H0231076 Y2 JPH0231076 Y2 JP H0231076Y2
- Authority
- JP
- Japan
- Prior art keywords
- container
- lid
- partition wall
- coffee
- lower chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000013353 coffee beverage Nutrition 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 238000005192 partition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 241000533293 Sesbania emerus Species 0.000 description 11
- 244000269722 Thea sinensis Species 0.000 description 6
- 239000000796 flavoring agent Substances 0.000 description 5
- 235000019634 flavors Nutrition 0.000 description 5
- 235000006468 Thea sinensis Nutrition 0.000 description 3
- 235000013361 beverage Nutrition 0.000 description 3
- 235000020279 black tea Nutrition 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 235000009569 green tea Nutrition 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229920006328 Styrofoam Polymers 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000008261 styrofoam Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8658786U JPH0231076Y2 (enrdf_load_stackoverflow) | 1986-06-09 | 1986-06-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8658786U JPH0231076Y2 (enrdf_load_stackoverflow) | 1986-06-09 | 1986-06-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62199019U JPS62199019U (enrdf_load_stackoverflow) | 1987-12-18 |
| JPH0231076Y2 true JPH0231076Y2 (enrdf_load_stackoverflow) | 1990-08-22 |
Family
ID=30943027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8658786U Expired JPH0231076Y2 (enrdf_load_stackoverflow) | 1986-06-09 | 1986-06-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231076Y2 (enrdf_load_stackoverflow) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6852167B2 (en) | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| US8026161B2 (en) | 2001-08-30 | 2011-09-27 | Micron Technology, Inc. | Highly reliable amorphous high-K gate oxide ZrO2 |
| US6844203B2 (en) | 2001-08-30 | 2005-01-18 | Micron Technology, Inc. | Gate oxides, and methods of forming |
| US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
| US6767795B2 (en) | 2002-01-17 | 2004-07-27 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOXNY |
| US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
| US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
| US7205218B2 (en) | 2002-06-05 | 2007-04-17 | Micron Technology, Inc. | Method including forming gate dielectrics having multiple lanthanide oxide layers |
| US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US6921702B2 (en) | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
| US6884739B2 (en) | 2002-08-15 | 2005-04-26 | Micron Technology Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
| US6967154B2 (en) | 2002-08-26 | 2005-11-22 | Micron Technology, Inc. | Enhanced atomic layer deposition |
| US7199023B2 (en) | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
| US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
| US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
| JP7371969B1 (ja) * | 2022-08-02 | 2023-10-31 | シロカ株式会社 | コーヒーメーカ |
-
1986
- 1986-06-09 JP JP8658786U patent/JPH0231076Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62199019U (enrdf_load_stackoverflow) | 1987-12-18 |
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