JPS62199019U - - Google Patents
Info
- Publication number
- JPS62199019U JPS62199019U JP8658786U JP8658786U JPS62199019U JP S62199019 U JPS62199019 U JP S62199019U JP 8658786 U JP8658786 U JP 8658786U JP 8658786 U JP8658786 U JP 8658786U JP S62199019 U JPS62199019 U JP S62199019U
- Authority
- JP
- Japan
- Prior art keywords
- container
- partition wall
- lid
- disposable coffee
- model registration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005192 partition Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8658786U JPH0231076Y2 (enrdf_load_stackoverflow) | 1986-06-09 | 1986-06-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8658786U JPH0231076Y2 (enrdf_load_stackoverflow) | 1986-06-09 | 1986-06-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62199019U true JPS62199019U (enrdf_load_stackoverflow) | 1987-12-18 |
| JPH0231076Y2 JPH0231076Y2 (enrdf_load_stackoverflow) | 1990-08-22 |
Family
ID=30943027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8658786U Expired JPH0231076Y2 (enrdf_load_stackoverflow) | 1986-06-09 | 1986-06-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231076Y2 (enrdf_load_stackoverflow) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844203B2 (en) | 2001-08-30 | 2005-01-18 | Micron Technology, Inc. | Gate oxides, and methods of forming |
| US7026694B2 (en) | 2002-08-15 | 2006-04-11 | Micron Technology, Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
| US7130220B2 (en) | 2002-06-21 | 2006-10-31 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
| US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
| US7169673B2 (en) | 2002-07-30 | 2007-01-30 | Micron Technology, Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
| US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
| US7199023B2 (en) | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
| US7205218B2 (en) | 2002-06-05 | 2007-04-17 | Micron Technology, Inc. | Method including forming gate dielectrics having multiple lanthanide oxide layers |
| US7205620B2 (en) | 2002-01-17 | 2007-04-17 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOxNy |
| US7259434B2 (en) | 2001-08-30 | 2007-08-21 | Micron Technology, Inc. | Highly reliable amorphous high-k gate oxide ZrO2 |
| US7279732B2 (en) | 2002-08-26 | 2007-10-09 | Micron Technology, Inc. | Enhanced atomic layer deposition |
| US7410668B2 (en) | 2001-03-01 | 2008-08-12 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| US7429515B2 (en) | 2001-12-20 | 2008-09-30 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
| US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
| JP2024020931A (ja) * | 2022-08-02 | 2024-02-15 | シロカ株式会社 | コーヒーメーカ |
-
1986
- 1986-06-09 JP JP8658786U patent/JPH0231076Y2/ja not_active Expired
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7410668B2 (en) | 2001-03-01 | 2008-08-12 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
| US7259434B2 (en) | 2001-08-30 | 2007-08-21 | Micron Technology, Inc. | Highly reliable amorphous high-k gate oxide ZrO2 |
| US7208804B2 (en) | 2001-08-30 | 2007-04-24 | Micron Technology, Inc. | Crystalline or amorphous medium-K gate oxides, Y203 and Gd203 |
| US6844203B2 (en) | 2001-08-30 | 2005-01-18 | Micron Technology, Inc. | Gate oxides, and methods of forming |
| US7429515B2 (en) | 2001-12-20 | 2008-09-30 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
| US7205620B2 (en) | 2002-01-17 | 2007-04-17 | Micron Technology, Inc. | Highly reliable amorphous high-k gate dielectric ZrOxNy |
| US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
| US7205218B2 (en) | 2002-06-05 | 2007-04-17 | Micron Technology, Inc. | Method including forming gate dielectrics having multiple lanthanide oxide layers |
| US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
| US7554161B2 (en) | 2002-06-05 | 2009-06-30 | Micron Technology, Inc. | HfAlO3 films for gate dielectrics |
| US7193893B2 (en) | 2002-06-21 | 2007-03-20 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7369435B2 (en) | 2002-06-21 | 2008-05-06 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7130220B2 (en) | 2002-06-21 | 2006-10-31 | Micron Technology, Inc. | Write once read only memory employing floating gates |
| US7169673B2 (en) | 2002-07-30 | 2007-01-30 | Micron Technology, Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
| US7439194B2 (en) | 2002-08-15 | 2008-10-21 | Micron Technology, Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
| US7026694B2 (en) | 2002-08-15 | 2006-04-11 | Micron Technology, Inc. | Lanthanide doped TiOx dielectric films by plasma oxidation |
| US7279732B2 (en) | 2002-08-26 | 2007-10-09 | Micron Technology, Inc. | Enhanced atomic layer deposition |
| US7326980B2 (en) | 2002-08-28 | 2008-02-05 | Micron Technology, Inc. | Devices with HfSiON dielectric films which are Hf-O rich |
| US7199023B2 (en) | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
| US7312494B2 (en) | 2003-06-24 | 2007-12-25 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
| US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
| US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
| JP2024020931A (ja) * | 2022-08-02 | 2024-02-15 | シロカ株式会社 | コーヒーメーカ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0231076Y2 (enrdf_load_stackoverflow) | 1990-08-22 |