JPH02294057A - Fine pattern structure body and its manufacture - Google Patents

Fine pattern structure body and its manufacture

Info

Publication number
JPH02294057A
JPH02294057A JP11425889A JP11425889A JPH02294057A JP H02294057 A JPH02294057 A JP H02294057A JP 11425889 A JP11425889 A JP 11425889A JP 11425889 A JP11425889 A JP 11425889A JP H02294057 A JPH02294057 A JP H02294057A
Authority
JP
Japan
Prior art keywords
base sheet
aspect ratio
pattern
thickness direction
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11425889A
Other languages
Japanese (ja)
Other versions
JPH0814028B2 (en
Inventor
Takao Segawa
瀬川 隆雄
Tetsuya Yanase
柳瀬 徹也
Takayuki Seki
関 高行
Takao Kimura
隆男 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP11425889A priority Critical patent/JPH0814028B2/en
Publication of JPH02294057A publication Critical patent/JPH02294057A/en
Publication of JPH0814028B2 publication Critical patent/JPH0814028B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • ing And Chemical Polishing (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture a fine pattern structure body at low cost which body has a size of aspect ratio larger than or equal to 1, by boring each through-hole, of a transparent pattern, penetrating in the thickness direction of a base sheet, in an oblique manner with respect to the thickness direction. CONSTITUTION:Through holes 4 are bored obliquely to the thickness direction of a base sheet 1, and the aspect ratio is controlled so as to be larger than or equal to 1. That is, resist patterns 3 divided on the surface and the rear of the base sheet 1 by aperture parts 2 are formed so as to be mutually shifted in the manner in which narrow width parts 3b of the resist pattern on the rear are positioned just under wide width parts 3a of the resist pattern 3 on the surface; etching liquid is sprayed from the surface and the rear of the base sheet 1; the through-holes 4 oblique to the thickness direction are formed. As a result, viewing from the direction vertical to the surface of the base sheet 1, the hole diameter of the through-hole 4 of slit width becomes small apparently, and the aspect ratio can be increased. Thereby the aspect ratio can be controlled to be a high value larger than or equal to 1, and a fine pattern structure body of low manufacturing cost can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は基材シートの厚み(板厚)と孔径もしくはスリ
ット幅との比、即ち板厚/孔径もしくは板厚/スリット
幅(以下、アスペクト比と称する)が1以上の微細な透
孔ノ譬ターンを有する微細/譬ターン構造体及びその製
造方法に関する.〔従来の技術〕 微細ノ々ターン構造体はり−rフレーム、各種メタルマ
スク、シャPウマスク、回路基板、コネクター、二冫コ
ーダー、スリット板、各種フィルター等に利用されてい
るが、その製法は一般にプレス加工IRいはエッチング
法を用いておこなわれている。その他、アスペクト比の
大きい孔やスリットを形成する念めイオンミリングやレ
ーザーt−用いた加工法、あるいは特開昭5 1 − 
40869号公報のように板厚を薄くして同一形状に加
工した複数板の板を重ね合せる方法も提案されている。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is based on the ratio of the thickness of the base sheet (plate thickness) to the hole diameter or slit width, that is, the ratio of the thickness of the base sheet to the hole diameter or slit width, that is, the ratio of the thickness of the base sheet to the hole diameter or the slit width (hereinafter referred to as aspect ratio). This invention relates to a fine/multi-turn structure having fine through-hole no-turns with a ratio of 1 or more, and a method for manufacturing the same. [Prior technology] Micro-no-turn structure beams are used for frames, various metal masks, shower masks, circuit boards, connectors, two-layer coders, slit plates, various filters, etc., but the manufacturing method is generally This is done using IR press processing or etching. Other methods include ion milling to form holes and slits with large aspect ratios, processing methods using laser t-
A method has also been proposed, as in Japanese Patent No. 40869, in which a plurality of plates processed into the same shape with reduced thickness are stacked on top of each other.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、従来のプレス加工法或いはエッチング法ではア
スペクト比が1以上の透孔・!ターンを形成することが
困難であり、又、複数の板を重ねる方法は複数の板の相
対位置を正確に定めることが著るしく困難なため、透孔
・リ−7寸法ならびに厚みにつhて高精度のものが得難
い。
However, conventional press working or etching methods produce through-holes with an aspect ratio of 1 or more! It is difficult to form a turn, and the method of stacking multiple plates makes it extremely difficult to accurately determine the relative positions of the plates. It is difficult to obtain high accuracy.

また、上述のイオ/ミリング加工又はレーザー加工によ
る方法は加工速度が遅く、加工を欲しない部分の損傷の
おそれがあるとともに加工設備の費用増大を招くおそれ
がある。
Further, the above-mentioned methods using ion/milling processing or laser processing have a slow processing speed, and there is a risk of damage to parts that are not desired to be processed, as well as an increase in the cost of processing equipment.

したがって本発明はアスペクト比を1以上の高い値に容
易に制御することができ、製造コスト、生産効率的にも
有利な微細・9ターン構造体及びその裂造方法を提供す
ることを目的とする。
Therefore, an object of the present invention is to provide a fine 9-turn structure and a method for fabricating the same, which can easily control the aspect ratio to a high value of 1 or more and are advantageous in terms of manufacturing cost and production efficiency. .

Ca題を解決するための手段〕 本発明は上記課題を解決するため、基材シートの厚み方
向に対し斜め方向に透孔を穿設し、これによりアスペク
ト比を1以上に制御するという手段を講じた。
Means for Solving the Ca Problem] In order to solve the above problems, the present invention provides a means of forming through holes in a diagonal direction with respect to the thickness direction of the base sheet, thereby controlling the aspect ratio to 1 or more. Lectured.

即ち、本発明は基材シートの厚み方向に貫通する微細な
透孔パターンが形成されてなる微細・苧ターン構造体で
あって、核透孔・9ターンの各透孔が該基材シートの厚
み方向に対し斜め方向に貫通し、かつアスペクト比が1
以上であることを特徴とする微細パターン構造体を提供
するものである。
That is, the present invention provides a micro-turn structure in which a pattern of fine holes penetrating through the thickness of a base sheet is formed, and each core hole and each nine-turn hole are formed in the base sheet. Penetrates diagonally to the thickness direction and has an aspect ratio of 1
The present invention provides a fine pattern structure characterized by the above features.

さらに本発明は基材シートの表面に開口部で仕切られた
第1のレジスト・セターンを形成するとともに、同じく
裏面に該第1のレジスト・平ター/と対応する開口部で
仕切られた第2のレジストパターンを形成し、該基材シ
ートの表裏面からエッチング液を吹き付けて第1及び第
2のレジスト・冫ターンの開口部を介して該基材シート
を厚み方向にエッチングし微細な貫通孔・平ターンを形
成させる微細パターン構造体の製造方法にお込て、該第
1のレジストノリ−ンの開口部とこれκ対応する第2の
レジスト・ナターンの開口部との位置関係が互いに斜め
に対向するような互いにずれた位置を以ってこれらレジ
ス} z4ターンを形成し、ついで上記エッチングをお
こなうことを特徴とする製造方法を提供するものである
. 〔作用〕 本発明の微細・千ターン構造体においては透孔・母ター
ンの各透孔が基材シートの厚み方向に対し斜めに向って
貫通しているため、基材シートの面に対し垂直な方向か
ら見たときの透孔の孔径又はスリット幅は見掛上小さく
なり、したがってアス{クト比の著るしい増大を図るこ
とが可能となる。
Furthermore, the present invention forms a first resist seta partitioned by an opening on the front surface of the base sheet, and also forms a second resist seta partitioned by an opening corresponding to the first resist seta on the back surface. A resist pattern is formed, and an etching solution is sprayed from the front and back surfaces of the base sheet to etch the base sheet in the thickness direction through the openings of the first and second resist layers to form fine through holes.・In the method for manufacturing a fine pattern structure in which a flat turn is formed, the positional relationship between the opening of the first resist pattern and the corresponding opening of the second resist pattern is oblique to each other. The present invention provides a manufacturing method characterized in that these resists } z4 turns are formed at positions offset from each other so as to face each other, and then the above-mentioned etching is performed. [Function] In the micro-turn structure of the present invention, each of the through holes and the main turns penetrates diagonally with respect to the thickness direction of the base sheet, so that the holes perpendicular to the surface of the base sheet The diameter of the through hole or the slit width when viewed from the same direction is apparently smaller, making it possible to significantly increase the aspect ratio.

また、本発明の製造方法にお込ては上述の斜め方向の透
孔を形成するため、基材シートの表裏面に形成するレジ
スト・Iターンを開口部が互いに斜めに対向するように
若干ずらして形成し、つ一八でこれら開口を介してエッ
チングすることにより自然に斜行する貫通孔が形成され
、これにより透孔IJ?夕一冫のアス{クト比を容易に
1以上に制御することが可能となる. 〔実施例〕 以下、本発明を図示の実施例を参照して説明する。
In addition, in the manufacturing method of the present invention, in order to form the above-mentioned diagonal through holes, the resist I-turns formed on the front and back surfaces of the base sheet are slightly shifted so that the openings are diagonally opposed to each other. By etching through these openings in step 18, naturally oblique through holes are formed, thereby forming through holes IJ? It becomes possible to easily control Yuichi's aspect ratio to 1 or more. [Examples] The present invention will be described below with reference to illustrated embodiments.

まず、if図(4)に示す如く、例えばり pフレーム
等に用いられる薄h金属板からなる基材シート10表裏
面に開口部2で仕切られたレジスト・?ター73をそれ
ぞれ形成する。このレソストパターン3は幅広部3aと
幅狭部3bとが開口部2を介して交互に形成されており
、基材シート1の表面のレジストパターン30幅広部3
aの真下に裏面のレジストパターンの偏狭部3bが位置
するように相互にずらして形成されている。したがって
、基材シート1の表面のレジストパターン3の各開口部
2は対応する裏面のレジストパターン3の各開口部2と
破線aで示す如く互いに斜めに対向することになる. この状態で、従来と同様に基材シート1の表裏面カラエ
ッチング液を吹き付ける。これによシ基材シート1はレ
ジス} ノfターン3の各開口部2から等方エッチング
され、第1図(B)に示す如く基材シート1の厚み方向
く対し斜行した貫通孔4が形成サれる。つ騒で、レジス
ト・やター73を溶解除去することにより第1図(C)
に示す如き微細・冫ターン構造体5を得ることができる
First, as shown in the IF diagram (4), a base sheet 10 made of a thin h metal plate used, for example, in a p-frame, has a resist film partitioned by openings 2 on the front and back surfaces. 73 are respectively formed. In this resist pattern 3, wide parts 3a and narrow parts 3b are alternately formed through openings 2, and the resist pattern 30 on the surface of the base sheet 1 has wide parts 3
They are formed so that they are shifted from each other so that the narrow part 3b of the resist pattern on the back side is located directly below the pattern a. Therefore, each opening 2 of the resist pattern 3 on the front side of the base sheet 1 faces diagonally to each opening 2 of the corresponding resist pattern 3 on the back side as shown by the broken line a. In this state, a color etching solution is sprayed on the front and back surfaces of the base sheet 1 in the same manner as before. As a result, the base sheet 1 is etched isotropically from each opening 2 of the nof turn 3, and as shown in FIG. is formed. By dissolving and removing the resist film 73 at a high temperature, the
A fine, thin-turn structure 5 as shown in FIG. 1 can be obtained.

この場合、貫通孔の孔径又はスリット幅は図示の如く基
材シート1面に対して垂直方向の幅、@W#で表わされ
、基材シート1の板厚″″T”に対しアスペクト比1以
上の小さい値に保つことができる。
In this case, the hole diameter or slit width of the through hole is the width in the direction perpendicular to the surface of the base sheet 1, as shown in the figure, and is represented by @W#, and the aspect ratio is It can be kept to a small value of 1 or more.

第2図は本発明の他の実施例を示すものであって、基材
シートに対するレジスト・リーンの形成方法は前記の第
1図の実施例と基本的に全く同一であり、唯一の異なる
点はレジストパターンの幅狭部3bが網点て形成されて
hることである。したがって、この幅狭部3bもゆるや
かな速度ではあるがエッチングが進行し、エッチング工
程後の形状は第2図(B)に示す如く、基材シートlの
表裏面は凹凸状となる。しかし、アスペクト比(T7W
)Vi第1図の実施例と同様に1以上に制御することが
できる。
FIG. 2 shows another embodiment of the present invention, in which the method of forming resist lean on the base sheet is basically exactly the same as the embodiment shown in FIG. This is because the narrow portion 3b of the resist pattern is formed as halftone dots. Therefore, the etching progresses on this narrow portion 3b as well, albeit at a slow speed, and the shape after the etching process is as shown in FIG. 2(B), with the front and back surfaces of the base sheet 1 having an uneven shape. However, the aspect ratio (T7W
) Vi can be controlled to 1 or more as in the embodiment shown in FIG.

第3図は本発明のさらに他の例を示すもので、基材シー
ト1表裏面ともに全体的に開口部2を等間隔に仕切られ
たレジスト・豐ターン3が形成されてhる.しかし、こ
の場合も表面のレジスト・中ター73は裏面のレジス}
 パターン3に対し若干位置をずらして設けられており
、その結果、表裏面の開口部2相互は破線@a”で示す
如く斜めに対向した位置関係となる。ζの状態で基材シ
ート1の表裏面からエッチングをおこなうことによシ、
第1図の実施例の場合と同様に貫通孔4は基材シート1
の厚み方向に対し斜行した状態で形成され、その結果、
第3図(B)に示す如くアスペクト比CTAりを1以上
に制御することができる。
FIG. 3 shows still another example of the present invention, in which resist turns 3 with openings 2 partitioned at equal intervals are formed on both the front and back surfaces of the base sheet 1. However, in this case as well, the resist on the front surface and the middle resistor 73 are the resists on the back surface.
As a result, the openings 2 on the front and back surfaces are diagonally opposed to each other as shown by the broken line @a''. By etching from the front and back sides,
As in the case of the embodiment shown in FIG.
It is formed obliquely with respect to the thickness direction, and as a result,
As shown in FIG. 3(B), the aspect ratio CTA can be controlled to 1 or more.

なお、アス{クト比の大きさはレジストパターンの開口
部の大きさ、基材シートの表裏のレジストパターンの開
口部相互間の位置ずれの大きさ等を考慮して適宜決定し
得る。
Note that the size of the aspect ratio can be appropriately determined by taking into account the size of the opening in the resist pattern, the size of the positional shift between the openings in the resist pattern on the front and back sides of the base sheet, and the like.

〔発明の効果〕〔Effect of the invention〕

以上詳述した如く、本発明は基材シートの厚み方向に貫
通させる透明・9ターンの各透孔をこの厚み方向に対し
斜めに穿股するようにしたから、アス{クト比が1以上
の大きさの微細・9ター7構造体を安価かつ高精度に製
造することが可能となり、従来の如く2枚の基材シート
を貼シ合せる必要もなく、従来のイオンミリング加工又
はレーザー加工の如く被加工部を損傷させるおそれ本な
hなど顕著な作用効果を奏する。
As detailed above, in the present invention, each of the transparent 9-turn through holes penetrating the base sheet in the thickness direction is perforated diagonally with respect to the thickness direction. It is now possible to manufacture fine-sized, 9-terrestrial structures at low cost and with high precision, and there is no need to paste two base sheets together as in the past, and it is possible to produce fine-sized structures using conventional ion milling or laser processing. It has remarkable effects such as h, which has the risk of damaging the processed part.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の微細・fター/構造体の製造方法を工
徨順に説明する断面図、第2図及び第3図はそれぞれ本
発明の他の実施例を示す断面図である。 1・・・基材シート、2・・・開口部、.3・・・レジ
ストパターン、4・・・貫通孔、5・・・微細・母ター
ン構造体。 第1図
FIG. 1 is a cross-sectional view illustrating the method of manufacturing a microstructure/fine structure according to the present invention step by step, and FIGS. 2 and 3 are cross-sectional views showing other embodiments of the present invention. 1... Base material sheet, 2... Opening, . 3... Resist pattern, 4... Through hole, 5... Fine/mother turn structure. Figure 1

Claims (1)

【特許請求の範囲】 1、基材シートの厚み方向に貫通する微細な透孔パター
ンが形成されてなる微細パターン構造体であって、該透
孔パターンの各透孔が該基材シートの厚み方向に対し斜
め方向に貫通し、かつアスペクト比が1以上であること
を特徴とする微細パターン構造体。 2、基材シートの表面に開口部で仕切られた第1のレジ
ストパターンを形成するとともに、同じく裏面に該第1
のレジストパターンと対応する開口部で仕切られた第2
のレジストパターンを形成し、該基材シートの表裏面か
らエッチング液を吹き付けて第1及び第2のレジストパ
ターンの開口部を介して該基材シートを厚み方向にエッ
チングし微細な貫通孔パターンを形成させる微細パター
ン構造体の製造方法において、該第1のレジストパター
ンの開口部とこれに対応する第2のレジストパターンの
開口部との位置関係が互いに斜めに対向するような互い
にずれた位置を以ってこれらレジストパターンを形成し
、ついで上記エッチングをおこなうことを特徴とする製
造方法。
[Scope of Claims] 1. A fine pattern structure in which a fine hole pattern penetrating in the thickness direction of a base sheet is formed, wherein each hole of the hole pattern extends through the thickness of the base sheet. 1. A fine pattern structure that penetrates diagonally with respect to the direction and has an aspect ratio of 1 or more. 2. Form a first resist pattern partitioned by openings on the front surface of the base sheet, and also form the first resist pattern on the back surface.
A second resist pattern separated by an opening corresponding to the resist pattern of
A resist pattern is formed, and an etching solution is sprayed from the front and back surfaces of the base sheet to etch the base sheet in the thickness direction through the openings of the first and second resist patterns to form a fine through-hole pattern. In the method for manufacturing a fine pattern structure, the openings of the first resist pattern and the corresponding openings of the second resist pattern are offset from each other so that they diagonally face each other. A manufacturing method characterized by forming these resist patterns and then performing the above etching.
JP11425889A 1989-05-09 1989-05-09 Fine pattern structure and manufacturing method thereof Expired - Fee Related JPH0814028B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11425889A JPH0814028B2 (en) 1989-05-09 1989-05-09 Fine pattern structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11425889A JPH0814028B2 (en) 1989-05-09 1989-05-09 Fine pattern structure and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH02294057A true JPH02294057A (en) 1990-12-05
JPH0814028B2 JPH0814028B2 (en) 1996-02-14

Family

ID=14633285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11425889A Expired - Fee Related JPH0814028B2 (en) 1989-05-09 1989-05-09 Fine pattern structure and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0814028B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057067A (en) * 2003-08-05 2005-03-03 Renesas Technology Corp Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057067A (en) * 2003-08-05 2005-03-03 Renesas Technology Corp Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0814028B2 (en) 1996-02-14

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