JPH02294024A - Diffusion furnace - Google Patents
Diffusion furnaceInfo
- Publication number
- JPH02294024A JPH02294024A JP11570689A JP11570689A JPH02294024A JP H02294024 A JPH02294024 A JP H02294024A JP 11570689 A JP11570689 A JP 11570689A JP 11570689 A JP11570689 A JP 11570689A JP H02294024 A JPH02294024 A JP H02294024A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- temperature inside
- thermocouple
- tube
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程で用いられる拡散炉装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a diffusion furnace apparatus used in the manufacturing process of semiconductor devices.
従来、この種の拡散炉装置は第3図に示すように,炉芯
管1の周囲に設けられたリアヒータ4、センターヒータ
5及びフロントヒータ6に内蔵された熱電対7,8.9
により、炉芯管内の温度制御を行うように構成されてい
た。Conventionally, this type of diffusion furnace apparatus, as shown in FIG. 3, has thermocouples 7,8.
It was configured to control the temperature inside the furnace core tube.
上述した従来の拡散炉装置はヒータ部に内蔵された熱電
対により、炉芯管内の温度を制御するように構成されて
いるため、拡散時には炉芯管内の温度に変動が生じる.
時に炉芯管の両端でこの変動傾向が顕著となって、半導
体基板(以下ウエハーと記す)への不純物の拡散量にば
らつきを生じるという欠点がある。The conventional diffusion furnace device described above is configured to control the temperature inside the furnace core tube using a thermocouple built into the heater section, so the temperature within the furnace core tube fluctuates during diffusion.
This fluctuation tendency sometimes becomes noticeable at both ends of the furnace core tube, resulting in variations in the amount of impurities diffused into the semiconductor substrate (hereinafter referred to as wafer).
上述した従来の拡散炉装置に対し本発明は、従来の熱電
対の他に拡散中の炉芯管内の温度を制御するためにウエ
ハーを保持する石英ボート内に熱電対を内蔵させるとい
う相違点を有する.〔課題を解決するための手段〕
本発明の拡散炉装置は、半導体基板をのせる石英ボート
と、前記石英ボートを入れる炉芯管と、前記炉芯管を加
熱するためのヒータと、前記炉芯管内の温度を制御する
ための温度コントローラとを有する拡散炉装置において
、不純物拡散時における前記炉芯管内の温度を制御する
ための熱電対を前記石英ボート内に内蔵させたものであ
る。The present invention differs from the conventional diffusion furnace apparatus described above in that, in addition to the conventional thermocouple, a thermocouple is built into the quartz boat that holds the wafer in order to control the temperature inside the furnace core tube during diffusion. have. [Means for Solving the Problems] A diffusion furnace apparatus of the present invention includes a quartz boat on which a semiconductor substrate is placed, a furnace core tube into which the quartz boat is placed, a heater for heating the furnace core tube, and the furnace core tube. In a diffusion furnace apparatus having a temperature controller for controlling the temperature inside the core tube, a thermocouple for controlling the temperature inside the furnace core tube during impurity diffusion is built into the quartz boat.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の第1の実施例の模式断面図である.
ウエハー3を保持する石英ボート2に内蔵されたリアー
熱電対13、センター熱電対14、フロント熱電対15
は、リアーヒータ4内のリアーヒータ熱電対7、センタ
ーヒータ5内のセンターヒータ熱電対8、フロントヒー
タ6内のフロントヒータ熱電対9とともに熱電対切替器
16を経由して、それぞれリアー温度コントローラ10
、センター温度コントローラ11、フロント温度コント
ローラ12に接続されている。炉芯管1内に石英ボート
2が無い場合には、リアーヒータ熱電対7、センターヒ
ータ熱電対8、フロントヒータ熱電対9により炉芯管1
内の温度を制御する。FIG. 1 is a schematic sectional view of the first embodiment of the present invention. A rear thermocouple 13, a center thermocouple 14, and a front thermocouple 15 are built into the quartz boat 2 that holds the wafer 3.
are connected to the rear temperature controller 10 via the thermocouple switch 16 together with the rear heater thermocouple 7 in the rear heater 4, the center heater thermocouple 8 in the center heater 5, and the front heater thermocouple 9 in the front heater 6.
, a center temperature controller 11, and a front temperature controller 12. If there is no quartz boat 2 in the furnace core tube 1, the rear heater thermocouple 7, center heater thermocouple 8, and front heater thermocouple 9
Control the temperature inside.
方、石英ボート2が炉芯管1に挿入された場合には、熱
電対切替器16により石英ホート2内のりアー熱電対1
3、センター熱電対14,フロント熱電対15に切替え
て炉芯管1内の温度を制御する。On the other hand, when the quartz boat 2 is inserted into the furnace core tube 1, the thermocouple switch 16 switches the quartz boat 2 into the furnace core tube 1.
3. Switch to the center thermocouple 14 and front thermocouple 15 to control the temperature inside the furnace core tube 1.
このように第1の実施例によれば、石英ボート2を炉芯
管1内に入れた場合の炉芯管1内の温度制御を、石英ボ
ート2に内蔵した熱電対により制御できるため、炉芯管
1内の温度は均一になり、ウエハー3の不純物拡散量の
ばらつきも極めて少いものとなる。As described above, according to the first embodiment, the temperature inside the furnace core tube 1 when the quartz boat 2 is placed inside the furnace core tube 1 can be controlled by the thermocouple built into the quartz boat 2. The temperature inside the core tube 1 becomes uniform, and the variation in the amount of impurity diffusion in the wafer 3 becomes extremely small.
第2図は本発明の第2の実施例における石英ポートの側
面図である。石英ホート2Aには凸部17が設けられて
おり、この凸部17に内蔵されたリアー熱電対13、セ
ンター熱電対14及びフロント熱電対15により、第1
の実施例と同様な温度制御を行う。FIG. 2 is a side view of a quartz port in a second embodiment of the invention. The quartz hole 2A is provided with a convex portion 17, and a rear thermocouple 13, a center thermocouple 14, and a front thermocouple 15 built into the convex portion 17 cause the first
Temperature control is performed in the same manner as in the embodiment.
この第2の実施例では、熱電対13,14.15が凸部
17に内蔵されているため、炉芯管1内の温度をより均
一に制御できるという利点がある。In this second embodiment, since the thermocouples 13, 14, and 15 are built into the convex portion 17, there is an advantage that the temperature inside the furnace core tube 1 can be controlled more uniformly.
以上説明したように本発明は、熱電対を石英ボートに内
蔵させることにより、石英ボートが炉芯管内にある場合
には、石英ボートに内蔵された熱電対により炉芯管内の
温度を制御することができるため、炉芯管内の温度の変
動を抑え、ウエハーへの不純物拡散を均一に行うことが
できるという効果がある。As explained above, the present invention has a thermocouple built into the quartz boat, so that when the quartz boat is inside the furnace core tube, the temperature inside the furnace core tube can be controlled by the thermocouple built into the quartz boat. This has the effect of suppressing temperature fluctuations within the furnace core tube and uniformly diffusing impurities into the wafer.
10・・・リア温度コントローラ、11・・・センター
温度コントローラ、12・・・フロント温度コントロー
ラ、13・・・リア熱電対、14・・・センター熱電対
、15・・・フロント熱電対、16・・・熱電対切替器
、17・・・凸部。10... Rear temperature controller, 11... Center temperature controller, 12... Front temperature controller, 13... Rear thermocouple, 14... Center thermocouple, 15... Front thermocouple, 16... ...Thermocouple switch, 17...Convex part.
Claims (1)
入れる炉芯管と、前記炉芯管を加熱するためのヒータと
、前記炉芯管内の温度を制御するための温度コントロー
ラとを有する拡散炉装置において、不純物拡散時におけ
る前記炉芯管内の温度を制御するための熱電対を前記石
英ボート内に内蔵させたことを特徴とする拡散炉装置。A diffusion furnace device comprising a quartz boat on which a semiconductor substrate is placed, a furnace core tube into which the quartz boat is placed, a heater for heating the furnace core tube, and a temperature controller for controlling the temperature inside the furnace core tube. A diffusion furnace apparatus characterized in that a thermocouple for controlling the temperature inside the furnace core tube during impurity diffusion is built into the quartz boat.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11570689A JPH02294024A (en) | 1989-05-08 | 1989-05-08 | Diffusion furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11570689A JPH02294024A (en) | 1989-05-08 | 1989-05-08 | Diffusion furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02294024A true JPH02294024A (en) | 1990-12-05 |
Family
ID=14669196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11570689A Pending JPH02294024A (en) | 1989-05-08 | 1989-05-08 | Diffusion furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02294024A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023053172A1 (en) * | 2021-09-28 | 2023-04-06 | 株式会社Kokusai Electric | Support tool, substrate processing device, and method for manufacturing semiconductor device |
-
1989
- 1989-05-08 JP JP11570689A patent/JPH02294024A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023053172A1 (en) * | 2021-09-28 | 2023-04-06 | 株式会社Kokusai Electric | Support tool, substrate processing device, and method for manufacturing semiconductor device |
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