JPH02277237A - Jet-stream type liquid treatment apparatus - Google Patents

Abstract

PURPOSE:To reduce an irregularity in an etching amount inside an identical face of a substrate to be treated by installing at least two or more drainage ports on circumferences whose central axis is common and whose radii from the central axis are different inside a jet-stream cup. CONSTITUTION:At least two drainage ports 6 are installed, inside a jet-stream cup 1, on circumferences whose central axis is common and whose radii from the central axis are different. When a semiconductor wafer 4 is etched, the semiconductor wafer 4 is held to a vacuum chuck 3 by vacuum suction; the semiconductor wafer 4 is held above the jet-stream cup 1 by keeping a proper interval D. Then, while the vacuum chuck 3 is being turned and the semiconductor water 4 is being turned, an etching liquid 5 is made to flow into the jet- stream cup 1 from the lower part of the cup 1 by using a pump. Then, the etching liquid 5 is passed through the interval D between the jet-stream cup 1 and the semiconductor wafer 4; it is discharged to the outside; it flows into the drainage ports 6 and is discharged to the outside through evacuation ports 7; it forms a complicated stream. Thereby, it is possible to reduce an irregularity in an etching amount and to enhance a face accuracy.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a jet liquid processing apparatus used in various liquid processing steps necessary for manufacturing semiconductor devices and the like.

[Prior Art J] When manufacturing a semiconductor device, various liquid treatments such as an etching process, a photolithographic development process, and water washing are performed. FIG. 4 is a perspective view showing a jet cup portion of a conventional jet liquid processing apparatus. FIG. 5 is a diagram showing the flow of processing liquid in a conventional jet type liquid processing apparatus. This jet cup (1)
For example, when etching a semiconductor wafer using
As shown in the figure, the semiconductor wafer (4) is placed on the vacuum chuck (3).
is held by vacuum suction (vacuum pump etc. not shown).

), then the semiconductor wafer (4) is held at an appropriate distance above the spout cup (1). Then, when the etching liquid (5) is caused to flow into the cup from below the jet cup (1) using a pump or the like (not shown), etching g! (5
) is ejected from the jet cup (1) as indicated by the arrow in the figure.

The result is etching! (5) is a semiconductor wafer (4)
After etching the surface of the semiconductor wafer (4), it flows from the center of the semiconductor wafer (4) toward the outer circumference, passes through the gap between the upper part of the jet cup (1) and the semiconductor wafer (4), and is etched to the outside. is discharged. Generally, the temperature of the etching liquid (5) is kept constant by an external temperature regulator or the like (not shown) in order to keep the etching rate of the semiconductor wafer (4) constant.

[Problem to be solved by the invention] The conventional jet liquid processing device is configured as described above.
A semiconductor wafer (4) is etched by an etching liquid (5) spouted from a jet cup (1). In the conventional jet liquid processing equipment as mentioned above, the etching liquid (
At the time of contact with the semiconductor wafer (4) in 5), the flow velocity is not uniform and the etching i (5) rising from below hits the semiconductor wafer directly in the central part of the jet cup (1), so The flow velocity at the time of contact increases, and the etching velocity for the semiconductor wafer (4) has a distribution as shown in FIG. As a result, as shown in FIG. 1O, variations occur due to the amount of etching within the surface of the semiconductor wafer (4). Since the etching liquid (5) flows only from the center of the semiconductor wafer (4) toward the outer circumference, when etching the semiconductor wafer (4) into a recess, for example, the etching liquid (5) flows within the recess. is as shown in Figure 9. In other words, there is a problem in that the etching solution (5) is insufficiently permeable, resulting in the etching being distorted in shape as shown in the figure.

In addition, as a conventional technique to solve these problems, a method has been devised in which the vacuum chuck (3) as shown in Fig. 6 is rotated and revolved around the central axis of the jet cup (1). However, with this technique, there are problems such as the etching liquid (5) getting around to the back side of the semiconductor wafer (4) and etching the back side, and the etching liquid (5) being sucked into the vacuum chuck (3). This invention was made in order to solve the above-mentioned conventional problems, and its purpose is to obtain a jet-type liquid processing apparatus that has less variation in the amount of etching on the same surface of a substrate to be processed and has a good surface area. There is.

[Means for Solving the Problems] The jet liquid treatment device according to the present invention has at least two or more drainage ports provided on the circumference of a jet cup having a common central axis and different radii from the central axis. It is characterized by

[Effect]

The jet liquid treatment device according to the present invention complicates the flow of the treatment liquid by providing two or more drainage ports on the circumference of the jet cup, which has a common central axis but different radii from the central axis. When processing such as etching is performed, it is possible to eliminate variations in the amount of etching within the wafer surface. As a result, the surface precision of the semiconductor wafer can be improved.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing an embodiment of the present invention.

FIG. 2 is a top view of the one in FIG.
) is characterized in that at least two or more drainage ports (6) are provided on the circumference having a common central axis and different radii from the central axis.

FIG. 3 is a sectional view of a jet cup showing the flow of etching liquid when the apparatus of the above embodiment is used.

For example, when etching a semiconductor wafer (4), the semiconductor wafer (4) is held by vacuum suction on the vacuum chuck (3); a vacuum pump or the like is not shown. ), in which case the semiconductor wafers are held at appropriate intervals on the jet cup (1). Then, by rotating the vacuum chuck (3), while rotating the semiconductor wafer (4), the etching liquid (5) is spouted into the cup from below the jet cup (1) using a pump (not shown). and etching liquid (
5) flows to the top of the jet cup (1) as shown by the mark in the center of the figure, touches the semiconductor wafer (4), and causes the semiconductor wafer (4) to flow.
etching the surface. Here, in the conventional jet cup (1) shown in FIG. 5, the etching liquid (5) flows along the semiconductor wafer (4) from the center in the lateral direction toward the outer periphery, and the etching liquid (5) flows between the jet cup (1) and the semiconductor wafer. (4) and is discharged to the outside. However, in the jet cup (1) according to the present invention, the central axis inside the jet cup (1) is common, but the radius from the central axis is different on the circumference. Since the drain port (6) is provided, the etching solution (5) is poured into the jet cup (as in the conventional case).
1) and the semiconductor wafer (4) and is discharged to the outside, it also flows into the drain port (6) and drains into the drain port (7).
) is discharged to the outside.

From this, the flow of the etching liquid (5) in the part that is in contact with the semiconductor wafer (4) does not flow only from the center of the semiconductor wafer (4) toward the outer circumference as in the conventional case, but as shown in FIG. The flow becomes complicated. Furthermore, since the semiconductor wafer (4) itself is rotating, the semiconductor wafer (4)
) The flow of the etching liquid (5) on the surface becomes even more complicated.

As a result, the etching rate becomes constant at any location on the semiconductor wafer (4) as shown in FIG. According to the inventor's experiments, for example, a GaAs wafer with a diameter of 2 inches was
When etching was performed, the variation in the amount of etching on the wafer was ±200x, resulting in an etching result with very good area coverage.

Furthermore, as shown in FIG. 9, the distortion of shape that occurs when conventionally etching recesses did not occur.

This seems to be because the flow of the etching liquid is more complicated than in the conventional apparatus, and the circulation of the etching liquid is divided into f parts.

In addition, here, the diameter of the jet cup (1) and the drain port (6)
The position etc. of the etching liquid may be determined depending on the diameter of the semiconductor wafer (4) on which various liquid treatments such as etching are performed, and also the distance between the jet cup (1) and the semiconductor wafer (4) and the flow rate of the etching liquid (5). , temperature, etc. may be selected appropriately.

In the embodiment, etching of a semiconductor wafer has been described, but the present invention can also be used in various cleaning processes such as development in a photolithography process and washing with water. It goes without saying that the present invention can also be applied to applications other than manufacturing semiconductor devices.

〔Effect of the invention〕

As described above, the jet liquid treatment device according to the present invention has at least two or more drainage ports on the circumference of the jet cup that share a common central axis but have different radii from the central axis, thereby complicating the flow of liquid. Since the etching speed is made uniform, various liquid treatments can be performed with less variation in the amount of etching and good surface accuracy.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing an embodiment according to the present invention, FIG. 2 is a top view thereof, FIG. 3 is a sectional view of a jet liquid processing apparatus showing the flow of processing liquid in an embodiment according to the present invention, and FIG. Figure 4 is
FIG. 5 is a perspective view of a conventional jet liquid processing device; FIG. 5 is a sectional view of the jet liquid processing device showing the flow of processing liquid in the conventional jet liquid processing device; and FIG. 6 is another conventional jet liquid processing device. 7 is a distribution diagram showing the distribution of etching speed in the wafer surface of a conventional jet liquid processing apparatus; FIG. 8 is a distribution diagram showing the etching rate of a jet liquid processing apparatus according to an embodiment of the present invention. Figure 9 is a cross-sectional view showing the cross-sectional shape of a wafer when etched with a conventional jet-type liquid processing apparatus, and Figure 10 is a distribution diagram showing the distribution of wafers etched in a conventional jet-type liquid processing apparatus. FIG. 11 is a cross-sectional view schematically showing variations in the etching amount of semiconductor wafers processed by the jet liquid processing apparatus according to the present invention. In the figure, (1) is the jet cup, (2) is the opening of the jet cup, (3) is the vacuum chuck, (4) is the semiconductor wafer, (5) is the etching solution, and (6) is the drain port. , (7) is the outlet. In addition, the same reference numerals in the figures indicate the same or equivalent parts. Figure 4 Figure 5 Figure 6 Figure 9 Figure 10 Figure 11 Figure 2, Name of the invention 3. Person making the amendment Jet type liquid processing device document (self-motivated) Related Patent Applicant Address 2-2 Marunouchi, Chiyoda-ku, Tokyo: 3 Name (601) Mitsubishi Electric Corporation Representative Moriya Shiki 5, Column for detailed explanation of the invention in the specification to be amended. 6 , Contents of the amendment (1) In the 20th line of page 5 of the specification, the statement ``When ejected with (not shown)'' was replaced with ``When made to flow in with (not shown).''
Correct to. (2) In the 7th line of page 7 of the specification, the statement ``Conventional recessed portions are etched as shown in Figure 9'' is corrected to ``Conventional recessed portions (8) are etched as shown in Figure 9''. do. Above 4, Agent address: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo

Claims (1)

[Claims] (1) A jet that has a jet cup that spouts a processing liquid from an upper opening, and performs liquid treatment by bringing the thin plate, etc. to be treated into contact with the processing liquid spouting from the opening of the jet cup. What is claimed is: 1. A jet type liquid treatment apparatus, characterized in that at least two or more drainage ports are provided on a circumference of a jet cup having a common central axis and different radii from the central axis.