JPH10242105A - Wet treating apparatus - Google Patents

Wet treating apparatus

Info

Publication number
JPH10242105A
JPH10242105A JP4579697A JP4579697A JPH10242105A JP H10242105 A JPH10242105 A JP H10242105A JP 4579697 A JP4579697 A JP 4579697A JP 4579697 A JP4579697 A JP 4579697A JP H10242105 A JPH10242105 A JP H10242105A
Authority
JP
Japan
Prior art keywords
wet processing
wet
processing tank
semiconductor wafer
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4579697A
Other languages
Japanese (ja)
Inventor
Masahito Kawashima
将人 河島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4579697A priority Critical patent/JPH10242105A/en
Publication of JPH10242105A publication Critical patent/JPH10242105A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To greatly reduce the turbulence of a treating liq. round jet holes to improve the cleaning efficiently by providing a straightening vane having many jet holes having wide entrances below a wet treating tank. SOLUTION: The apparatus comprises a straightening vane 30 below a wet treating tank. The vane 30 has many jet holes 30a e.g. approximately truncated conical holes having wider drains 32 for a treating liq. than entrances 31. The holes are bored through a Teflon flat plate in a close packed configuration. When a semiconductor wafer is cleaned in the wet treating tank using such a vane 30, the turbulence of the treating liq. around the hole holes 30a of the plate 30 is greatly reduced to obtain a uniform laminar flow on the wafer surface, thus improving the wafer cleaning efficiency.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はウェット処理装置に
関し、さらに詳しくは、半導体装置の製造装置で、半導
体ウェハの薬液処理と純水処理等を行う洗浄工程やウェ
ットエッチング工程等で用いられるウェット処理装置の
ウェット処理槽に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet processing apparatus, and more particularly, to a wet processing used in a cleaning process and a wet etching process for performing a chemical treatment and a pure water treatment of a semiconductor wafer in a semiconductor device manufacturing apparatus. The present invention relates to a wet processing tank of the apparatus.

【0002】[0002]

【従来の技術】半導体装置の製造に使用される半導体製
造装置の一つとして、半導体ウェハの薬液処理と純水処
理等を行う洗浄工程で用いられる洗浄装置や、半導体ウ
ェハのウェットエッチング工程で用いられるウェットエ
ッチング装置等のウェット処理装置がある。この洗浄装
置やウェットエッチング装置には、ウェット処理槽内の
処理液に半導体ウェハを浸漬して、半導体ウェハの洗浄
やエッチングを行う方法をとる装置と、処理液を半導体
ウェハに噴射させながら半導体ウェハの洗浄やエッチン
グを行う方法等を採るウェット処理装置がある。ここで
は、ウェット処理装置として、ウェット処理槽内の処理
液に半導体ウェハを浸漬して、半導体ウェハの洗浄をす
る洗浄装置を例に上げ、図3〜図6を参照して説明す
る。
2. Description of the Related Art As one of semiconductor manufacturing apparatuses used for manufacturing semiconductor devices, there are used a cleaning apparatus used in a cleaning step of performing a chemical solution treatment and a pure water treatment of a semiconductor wafer and a wet etching step of a semiconductor wafer. There is a wet processing apparatus such as a wet etching apparatus. The cleaning device and the wet etching device include a device for immersing a semiconductor wafer in a processing liquid in a wet processing tank and cleaning or etching the semiconductor wafer, and a semiconductor wafer while spraying the processing liquid onto the semiconductor wafer. There is a wet processing apparatus that employs a method of cleaning or etching a substrate. Here, as a wet processing apparatus, a cleaning apparatus for cleaning a semiconductor wafer by immersing a semiconductor wafer in a processing liquid in a wet processing tank will be described as an example, and will be described with reference to FIGS.

【0003】まず、洗浄装置1は、図3に示すように、
ローダ部2、アンローダ部3、搬送用ロボット4、複数
のウェット処理槽5およびスピンドライヤ6等で概略構
成されている。ローダ部2は、洗浄前の半導体ウェハが
設置される場所で、このローダ部2に設置された半導体
ウェハは、搬送用ロボット4で取り出し、ウェット処理
槽5に搬送される。ウェット処理槽5には、洗浄プロセ
スに応じた薬液や純水がそれぞれ供給されており、この
各々のウェット処理槽5間の半導体ウェハの搬送も搬送
用ロボット4により行われる。半導体ウェハのウェット
処理槽5による洗浄プロセスが終了すると、半導体ウェ
ハは搬送用ロボット4によりスピンドライヤ6に搬送さ
れ、ここで半導体ウェハの乾燥処理が行われる。乾燥処
理が終了した半導体ウェハは、搬送用ロボット4により
アンローダ部3に搬送され、このアンローダ部3の半導
体ウェハ設置部に載置される。
[0003] First, as shown in FIG.
It roughly comprises a loader section 2, an unloader section 3, a transfer robot 4, a plurality of wet processing tanks 5, a spin dryer 6, and the like. The loader unit 2 is a place where the semiconductor wafer before cleaning is set. The semiconductor wafer set in the loader unit 2 is taken out by the transfer robot 4 and transferred to the wet processing tank 5. A chemical solution or pure water according to the cleaning process is supplied to the wet processing tank 5, and the transfer of the semiconductor wafer between the wet processing tanks 5 is also performed by the transfer robot 4. When the cleaning process of the semiconductor wafer in the wet processing tank 5 is completed, the semiconductor wafer is transported to the spin dryer 6 by the transport robot 4, where the semiconductor wafer is dried. The semiconductor wafer on which the drying process has been completed is transported to the unloader unit 3 by the transport robot 4, and is placed on the semiconductor wafer installation unit of the unloader unit 3.

【0004】この洗浄装置1のウェット処理槽5の構造
は、図4に示すように、処理槽部10と排液受け部20
とで概略構成されている。処理槽部10の底部には処理
液を供給する供給配管11が設けられ、処理槽部10底
部の上方には、処理槽部10内での処理液の流れを層流
とするための整流板12が設けられている。整流板12
は、処理液を噴出させる噴出孔12aが多数設けられた
平板で、この整流板12の詳細構造を図5に示す。ここ
で、図5(a)は整流板12の概略平面図で、図5
(b)は図5(a)のC−C部を拡大した概略断面図で
ある。整流板12は、図5(a)、(b)に示すよう
に、例えば平坦なテフロン製平板に円筒状の噴出孔12
aを等間隔に多数配設した構造となっている。なお、こ
の整流板12上には、搬送用ロボット4で搬送された半
導体ウェハを載置する半導体ウェハ載置部(図示省略)
が設けられている。
[0004] As shown in FIG. 4, the structure of a wet processing tank 5 of the cleaning apparatus 1 is a processing tank section 10 and a drainage receiving section 20.
It is roughly composed of A supply pipe 11 for supplying a processing liquid is provided at the bottom of the processing tank unit 10, and a rectifying plate for making a flow of the processing liquid in the processing tank unit 10 a laminar flow is provided above the bottom of the processing tank unit 10. 12 are provided. Current plate 12
Is a flat plate provided with a large number of ejection holes 12a for ejecting the treatment liquid. FIG. Here, FIG. 5A is a schematic plan view of the current plate 12 and FIG.
FIG. 5B is a schematic cross-sectional view enlarging a CC section of FIG. As shown in FIGS. 5 (a) and 5 (b), the current plate 12 is formed, for example, on a flat Teflon flat plate by a cylindrical ejection hole 12.
This is a structure in which many a are arranged at equal intervals. Note that a semiconductor wafer mounting portion (not shown) on which the semiconductor wafer transported by the transport robot 4 is mounted is disposed on the current plate 12.
Is provided.

【0005】処理液を供給する供給配管11より処理液
が処理槽部10底部より導入されると、この処理液は整
流板12の噴出孔12aより噴出して層流状となって、
処理槽部10の上方へと流れ、処理槽部10上部に達し
た処理液は処理槽部10側壁上端より溢れて、排液受け
部20に流れ、排液受け部20底部に設けられた処理液
の排液管21より排出される。
When the processing liquid is introduced from the bottom of the processing tank section 10 through the supply pipe 11 for supplying the processing liquid, the processing liquid is jetted from the jet holes 12a of the rectifying plate 12 to form a laminar flow.
The processing liquid that flows above the processing tank unit 10 and reaches the upper portion of the processing tank unit 10 overflows from the upper end of the side wall of the processing tank unit 10, flows into the drainage receiving unit 20, and is provided at the bottom of the drainage receiving unit 20. The liquid is discharged from a drain pipe 21.

【0006】上述したようなウェット処理槽5を有して
構成された洗浄装置1における最も重要なことは洗浄能
力である。この洗浄能力を決めている大きな要因は、ウ
ェット処理槽5における洗浄とスピンドライヤ6におけ
る乾燥である。ウェット処理槽5における洗浄効果を上
げるためには、使用する薬液や純水の純度やこれら処理
液をどのような手順で処理するかという洗浄プロセス等
にもよるが、半導体ウェハ表面に接する処理液の停滞を
無くして、半導体ウェハ表面上方で処理液が均一に置換
される処理液の流れを作ることが重要で、このために多
数の噴出孔12aを設けた整流板12による処理液の層
流を形成している。
The most important thing in the cleaning apparatus 1 having the above-mentioned wet processing tank 5 is the cleaning ability. The major factors that determine the cleaning performance are cleaning in the wet processing tank 5 and drying in the spin dryer 6. In order to increase the cleaning effect in the wet processing tank 5, the processing liquid that contacts the semiconductor wafer surface depends on the purity of the chemical solution or pure water to be used and the cleaning process in which these processing liquids are processed. It is important to eliminate the stagnation of the processing liquid and to create a flow of the processing liquid in which the processing liquid is uniformly replaced above the surface of the semiconductor wafer. For this reason, the laminar flow of the processing liquid by the rectifying plate 12 provided with a large number of ejection holes 12a Is formed.

【0007】ウェット処理槽5内の処理液の流れは、半
導体ウェハが半導体ウェハ載置部(図示省略)に載置さ
れた状態で、ウェット処理槽5内の半導体ウェハのある
中央部とウェット処理槽5内の周辺部とでは流速が異な
り、層流状態が悪くなる。そのため、図5に示すような
同一径の噴出孔12aを等間隔で配置した整流板12で
はなく、整流板12の中央部と周辺部とで噴出孔12a
径を変化させたり、整流板12の中央部と周辺部とで噴
出孔12aの配置間隔を変化させたり、更には整流板1
2の噴出孔12aを半導体ウェハに平行するスリット状
に変え、このスリット幅や間隔を変えたりした種々の工
夫も行われている。
The flow of the processing liquid in the wet processing bath 5 is such that the semiconductor wafer is placed on a semiconductor wafer mounting portion (not shown) and the central portion of the semiconductor wafer in the wet processing bath 5 is wet-processed. The flow velocity is different from the peripheral part in the tank 5, and the laminar flow state is deteriorated. Therefore, instead of the straightening plate 12 in which the ejection holes 12a having the same diameter are arranged at equal intervals as shown in FIG.
Changing the diameter, changing the arrangement interval of the ejection holes 12a between the central part and the peripheral part of the current plate 12,
Various modifications have been made such that the two ejection holes 12a are changed into a slit shape parallel to the semiconductor wafer, and the slit width and interval are changed.

【0008】しかしながら、上述した円筒状の噴出孔1
2aの整流板12を用いたウェット処理槽5による半導
体ウェハの洗浄処理時は、図6に示すように、整流板1
2の噴出孔12a周辺部に処理液の乱流を生じ、この乱
流の影響が整流板12を通った処理液の層流を乱し、洗
浄する半導体ウェハ面上での均一な層流が得られず、半
導体ウェハの洗浄効果が不充分であるという問題があっ
た。このため、金属汚染や、付着ダストによるパターニ
ング不良等で半導体装置の製造歩留が低下するという問
題が発生する虞があった。
However, the above-described cylindrical ejection hole 1
At the time of cleaning the semiconductor wafer in the wet processing tank 5 using the rectifying plate 12 of 2a, as shown in FIG.
The turbulent flow of the processing liquid is generated around the ejection holes 12a of the second, and the influence of the turbulent flow disturbs the laminar flow of the processing liquid passing through the rectifying plate 12, and the uniform laminar flow on the semiconductor wafer surface to be cleaned is generated. Thus, there is a problem that the cleaning effect of the semiconductor wafer is insufficient. For this reason, there is a possibility that a problem that the production yield of the semiconductor device is reduced due to metal contamination, patterning failure due to attached dust, or the like may occur.

【0009】[0009]

【発明が解決しようとする課題】本発明は、上述したウ
ェット処理槽における問題点を解決することをその目的
とする。即ち本発明の課題は、洗浄効果の大きいウェッ
ト処理槽を有するウェット処理装置を提供することを目
的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the wet processing tank. That is, an object of the present invention is to provide a wet processing apparatus having a wet processing tank having a large cleaning effect.

【0010】[0010]

【課題を解決するための手段】本発明のウェット処理装
置は、上述の課題を解決するために提案するものであ
り、ウェット処理槽を有するウェット処理装置におい
て、ウェット処理槽内の下方に、流入口より流出口を広
くした噴出孔を多数配設した整流板を設けたことを特徴
とするものである。
Means for Solving the Problems A wet processing apparatus according to the present invention is proposed to solve the above-mentioned problems. In a wet processing apparatus having a wet processing tank, a wet flow is provided below the wet processing tank. It is characterized in that a flow straightening plate provided with a large number of ejection holes whose outlets are wider than the inlets is provided.

【0011】本発明によれば、ウェット処理槽内の下方
に、流入口より流出口を広くした噴出孔を多数配設した
整流板を設けたことで、噴出孔周辺部での処理液の乱流
を大幅に低減させられるので、ウェット処理槽内の処理
液は層流となって被処理基板を処理するため、洗浄効果
が向上する。
According to the present invention, a rectifying plate provided with a large number of ejection holes whose outlets are wider than the inlets is provided below the wet processing tank, so that the processing liquid is turbulent around the ejection holes. Since the flow can be greatly reduced, the processing liquid in the wet processing tank becomes a laminar flow to process the substrate to be processed, so that the cleaning effect is improved.

【0012】[0012]

【発明の実施の形態】以下、本発明の具体的実施の形態
例につき、添付図面を参照して説明する。なお従来技術
の説明で参照した図3、図4、図6中の構成部分と同様
の構成部分には、同一の参照符号を付すものとする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings. Components similar to those in FIGS. 3, 4, and 6 referred to in the description of the related art are denoted by the same reference numerals.

【0013】実施の形態例1 本実施の形態例はウェット処理槽を有するウェット処理
装置の一つである洗浄装置に本発明を適用した例であ
り、これを従来例で使用した図3、図4および図6と、
図1を参照して説明する。まず、洗浄装置1の基本構成
は、図3に示す従来例の洗浄装置1とほぼ同様なので、
洗浄装置1の基本構成部の説明は省略する。また、洗浄
装置1内のウェット処理槽5の基本構成も、図4に示す
従来例のウェット処理槽5とほぼ同様なので、ウェット
処理槽5の基本構成部の説明も省略する。
Embodiment 1 This embodiment is an example in which the present invention is applied to a cleaning apparatus which is one of wet processing apparatuses having a wet processing tank, and FIG. 3 and FIG. 4 and FIG.
This will be described with reference to FIG. First, the basic configuration of the cleaning apparatus 1 is almost the same as that of the conventional cleaning apparatus 1 shown in FIG.
Description of the basic components of the cleaning device 1 will be omitted. Further, the basic configuration of the wet processing tank 5 in the cleaning apparatus 1 is almost the same as the conventional wet processing tank 5 shown in FIG.

【0014】次に、本実施の形態例のウェット処理槽5
の整流板30は、図1に示すような構造となっている。
ここで、図1(a)は整流板30の概略平面図で、図5
(b)は図1(a)のA−A部を拡大した概略断面図で
ある。整流板30は、図1(a)、(b)に示すよう
に、例えばテフロン製平板に処理液の流入口31より流
出口32の方が広い噴出孔30a、例えば略円錐台状の
噴出孔30aを、例えば稠密状配列により多数配設した
構造となっている。この略円錐台状の噴出孔30aの中
心を通る概略断面は図1(b)に示すようになってい
て、噴出孔30a側壁の傾斜が円弧状となっている。な
お、図1に示す整流板30の噴出孔30a形状の代わり
に、噴出孔の中心を通る概略断面図で噴出孔側壁が直線
となる、所謂円錐台状の噴出孔であってもよい。
Next, the wet processing tank 5 of this embodiment
Has a structure as shown in FIG.
Here, FIG. 1A is a schematic plan view of the current plate 30 and FIG.
FIG. 2B is a schematic cross-sectional view enlarging an AA part of FIG. As shown in FIGS. 1 (a) and 1 (b), the rectifying plate 30 is formed of, for example, a Teflon flat plate with an outlet 32a having an outlet 32 wider than the inlet 31 of the processing liquid, for example, a substantially frustoconical outlet. A large number of 30a are arranged, for example, in a dense arrangement. A schematic cross section passing through the center of the substantially truncated conical ejection hole 30a is as shown in FIG. 1B, and the inclination of the side wall of the ejection hole 30a is an arc. Instead of the shape of the ejection hole 30a of the current plate 30 shown in FIG. 1, a so-called frustoconical ejection hole in which the ejection hole side wall is straight in a schematic sectional view passing through the center of the ejection hole may be used.

【0015】上述した整流板30を用いたウェット処理
槽5により半導体ウェハを洗浄すると、図6に示す従来
例のような整流板12の噴出孔12a周辺部での処理液
の乱流の発生が大幅に少なくなり、洗浄する半導体ウェ
ハ面上での均一な層流が得られ、半導体ウェハの洗浄効
果が向上する。
When the semiconductor wafer is washed in the wet processing tank 5 using the above-mentioned current plate 30, a turbulent flow of the processing liquid occurs around the ejection holes 12a of the current plate 12 as shown in FIG. The amount is greatly reduced, and a uniform laminar flow on the surface of the semiconductor wafer to be cleaned is obtained, and the cleaning effect of the semiconductor wafer is improved.

【0016】実施の形態例2 本実施の形態例はウェット処理槽を有するウェット処理
装置の一つである洗浄装置に本発明を適用した例であ
り、これを従来例で使用した図3、図4および図6と、
図2を参照して説明する。まず、洗浄装置の基本構成
は、図3に示す従来例の洗浄装置1とほぼ同様なので、
洗浄装置の基本構成部の説明は省略する。また、洗浄装
置内のウェット処理槽5の基本構成も、図4に示す従来
例のウェット処理槽5とほぼ同様なので、ウェット処理
槽5の基本構成部の説明も省略する。次に、本実施の形
態例のウェット処理槽5の整流板40は、図2に示すよ
うな構造となっている。ここで、図2(a)は整流板4
0の概略平面図で、図2(b)は図2(a)のB−B部
を拡大した概略断面図である。
Embodiment 2 This embodiment is an example in which the present invention is applied to a cleaning apparatus which is one of wet processing apparatuses having a wet processing tank, and FIG. 3 and FIG. 4 and FIG.
This will be described with reference to FIG. First, the basic configuration of the cleaning device is almost the same as the conventional cleaning device 1 shown in FIG.
The description of the basic components of the cleaning device will be omitted. In addition, the basic configuration of the wet processing tank 5 in the cleaning apparatus is almost the same as the conventional wet processing tank 5 shown in FIG. Next, the current plate 40 of the wet processing tank 5 of the present embodiment has a structure as shown in FIG. Here, FIG.
0 is a schematic plan view, and FIG. 2B is a schematic cross-sectional view enlarging a BB portion in FIG. 2A.

【0017】整流板40は、図2(a)、(b)に示す
ように、例えば平坦なテフロン製平板に処理液の流入口
41より流出口42の方が広い噴出孔40a、例えばウ
ェット処理槽5で処理される半導体ウェハ面に平行な長
辺を持つ略四角錐台状、例えば四角錐台状の噴出孔40
aを、例えば縦、横ともに等間隔となる構成で多数配設
した構造となっている。なお、上述した整流板40の噴
出孔40aは、四角錐台状の噴出孔40aとしたが、四
角錐台状の噴出孔40aの代わりに、噴出孔側壁が円弧
状となる略四角錐台状の噴出孔としてもよい。
As shown in FIGS. 2 (a) and 2 (b), the flow regulating plate 40 is formed, for example, on a flat Teflon flat plate by an ejection hole 40a whose outlet 42 is wider than the inlet 41 of the processing liquid, for example, wet processing. A substantially quadrangular truncated pyramid-shaped ejection hole 40 having a long side parallel to the surface of the semiconductor wafer to be processed in the tank 5, for example, a quadrangular pyramid-shaped ejection hole
For example, a large number of "a" are arranged at equal intervals both vertically and horizontally. Although the above-described ejection holes 40a of the current plate 40 are truncated square pyramid-shaped ejection holes 40a, instead of the truncated square pyramid-shaped ejection holes 40a, substantially square truncated pyramidal shapes in which the ejection hole side walls are arc-shaped. It is good also as an ejection hole.

【0018】上述した整流板40を用いたウェット処理
槽5により半導体ウェハを洗浄すると、図6に示す従来
例のような整流板12の噴出孔12a周辺部での処理液
の乱流の発生が大幅に少なくなり、洗浄する半導体ウェ
ハ面上での均一な層流が得られ、半導体ウェハの洗浄効
果が向上する。
When the semiconductor wafer is washed in the wet processing tank 5 using the above-described current plate 40, turbulence of the processing liquid occurs around the ejection holes 12a of the current plate 12 as shown in FIG. The amount is greatly reduced, and a uniform laminar flow on the surface of the semiconductor wafer to be cleaned is obtained, and the cleaning effect of the semiconductor wafer is improved.

【0019】以上、本発明を2例の実施の形態例により
説明したが、本発明はこれらの実施の形態例に何ら限定
されるものではない。例えば、本発明の実施の形態例で
は、ウェット処理槽を有するウェット処理装置を洗浄装
置として説明したが、ウェット処理槽を有するウェット
エッチング装置にも適応してもよい。また、本発明の実
施の形態例では、テフロン製の整流板としたが、石英製
やエンビ製の整流板でもよい。更に、本発明の実施の形
態例では、同じ形状の噴出孔を等間隔に多数配設した整
流板を用いて説明したが、整流板上の半導体ウェハ載置
部のある整流板中央部と整流板周辺部とで、噴出孔の大
きさや間隔等を変化させてもよい。
Although the present invention has been described with reference to the two embodiments, the present invention is not limited to these embodiments. For example, in the embodiment of the present invention, a wet processing apparatus having a wet processing tank is described as a cleaning apparatus. However, the present invention may be applied to a wet etching apparatus having a wet processing tank. Further, in the embodiment of the present invention, a straightening plate made of Teflon is used, but a straightening plate made of quartz or enbi may be used. Further, in the embodiment of the present invention, the description has been made using the rectifying plate in which a large number of ejection holes having the same shape are arranged at equal intervals. The size, interval, and the like of the ejection holes may be changed between the peripheral portion and the plate.

【0020】[0020]

【発明の効果】以上の説明から明らかなように、本発明
のウェット処理槽を有するウェット処理装置は、流入口
より流出口を広くした噴出孔を多数配設した整流板を用
いたウェット処理槽で半導体ウェハの洗浄を行うため
に、洗浄効果が大きい。従って、このウェット処理装置
を使用すれば、半導体装置の製造歩留が向上する。
As is apparent from the above description, the wet processing apparatus having the wet processing tank according to the present invention is a wet processing tank using a straightening plate provided with a large number of ejection holes having an outlet wider than an inlet. The cleaning effect is large because the semiconductor wafer is cleaned by the method described above. Therefore, the use of this wet processing apparatus improves the production yield of semiconductor devices.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態例1のウェット処理槽の整
流板で、(a)は概略平面図、(b)は図1(a)のA
−A部を拡大した概略断面図である。
FIG. 1 is a current plate of a wet processing tank according to a first embodiment of the present invention, where (a) is a schematic plan view and (b) is A in FIG. 1 (a).
It is the schematic sectional drawing which expanded the -A part.

【図2】本発明の実施の形態例2のウェット処理槽の整
流板で、(a)は概略平面図、(b)は図2(a)のB
−B部を拡大した概略断面図である。
2 (a) is a schematic plan view, and FIG. 2 (b) is a flow rectifier plate of a wet processing tank according to Embodiment 2 of the present invention.
It is the schematic sectional drawing which expanded the -B part.

【図3】従来例の洗浄装置の概略図である。FIG. 3 is a schematic view of a conventional cleaning apparatus.

【図4】従来例の洗浄装置のウェット処理槽の概略図で
ある。
FIG. 4 is a schematic view of a wet processing tank of a conventional cleaning apparatus.

【図5】従来例のウェット処理槽の整流板で、(a)は
概略平面図、(b)は図5(a)のC−C部を拡大した
概略断面図である。
5 (a) is a schematic plan view, and FIG. 5 (b) is a schematic cross-sectional view enlarging a C-C portion of FIG.

【図6】従来例のウェット処理槽の整流板の噴出孔から
の処理液の流れを説明する図である。
FIG. 6 is a diagram illustrating a flow of a processing liquid from a discharge hole of a current plate of a conventional wet processing tank.

【符号の説明】[Explanation of symbols]

1…洗浄装置、2…ローダ部、3…アンローダ部、4…
搬送用ロボット、5…ウェット処理槽、6…スピンドラ
イヤ、10…処理槽部、11…供給配管、12,30,
40…整流板、12a…噴出孔、20…排液受け部、2
1…排液管、31,41…流入口、32,42…流出口
DESCRIPTION OF SYMBOLS 1 ... Cleaning device, 2 ... Loader part, 3 ... Unloader part, 4 ...
Transfer robot, 5: wet processing tank, 6: spin dryer, 10: processing tank section, 11: supply pipe, 12, 30,
Reference numeral 40: straightening plate, 12a: ejection hole, 20: drainage receiving part, 2
1 ... drainage pipe, 31, 41 ... inlet, 32, 42 ... outlet

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 ウェット処理槽を有するウェット処理装
置において、 前記ウェット処理槽内の下方に、流入口より流出口を広
くした噴出孔を多数配設した整流板を設けたことを特徴
とするウェット処理装置。
1. A wet processing apparatus having a wet processing tank, wherein a rectifying plate provided with a large number of ejection holes having an outlet wider than an inlet is provided below the wet processing tank. Processing equipment.
【請求項2】 前記噴出孔は、略円錐台状であることを
特徴とする、請求項1に記載のウェット処理装置。
2. The wet processing apparatus according to claim 1, wherein the ejection hole has a substantially truncated cone shape.
【請求項3】 前記噴出孔は、稠密状配列にしたことを
特徴とする請求項2に記載のウェット処理装置。
3. The wet processing apparatus according to claim 2, wherein the ejection holes are arranged in a dense arrangement.
【請求項4】 前記噴出孔は、前記ウェット処理槽で処
理される被処理基板面に平行な長辺を持つ略四角錐台状
であることを特徴とする、請求項1に記載のウェット処
理装置。
4. The wet processing according to claim 1, wherein the ejection holes have a substantially truncated quadrangular pyramid shape having long sides parallel to a surface of a substrate to be processed in the wet processing tank. apparatus.
JP4579697A 1997-02-28 1997-02-28 Wet treating apparatus Pending JPH10242105A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4579697A JPH10242105A (en) 1997-02-28 1997-02-28 Wet treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4579697A JPH10242105A (en) 1997-02-28 1997-02-28 Wet treating apparatus

Publications (1)

Publication Number Publication Date
JPH10242105A true JPH10242105A (en) 1998-09-11

Family

ID=12729249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4579697A Pending JPH10242105A (en) 1997-02-28 1997-02-28 Wet treating apparatus

Country Status (1)

Country Link
JP (1) JPH10242105A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010070779A (en) * 2001-06-07 2001-07-27 박용석 Rectangular nozzle apparatus for cleaning glass substarte for liquid crystal display
KR100489654B1 (en) * 1998-05-25 2005-08-01 삼성전자주식회사 Cleaning device for chemical injection nozzle
US7651952B2 (en) 2007-12-19 2010-01-26 Hitachi Global Storage Technologies Netherlands, B.V. Aerodynamic shapes for wafer structures to reduce damage caused by cleaning processes
WO2016009482A1 (en) * 2014-07-14 2016-01-21 細田工業株式会社 Food material cleaning device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100489654B1 (en) * 1998-05-25 2005-08-01 삼성전자주식회사 Cleaning device for chemical injection nozzle
KR20010070779A (en) * 2001-06-07 2001-07-27 박용석 Rectangular nozzle apparatus for cleaning glass substarte for liquid crystal display
US7651952B2 (en) 2007-12-19 2010-01-26 Hitachi Global Storage Technologies Netherlands, B.V. Aerodynamic shapes for wafer structures to reduce damage caused by cleaning processes
WO2016009482A1 (en) * 2014-07-14 2016-01-21 細田工業株式会社 Food material cleaning device
CN106535666A (en) * 2014-07-14 2017-03-22 细田工业株式会社 Extractor with screen washing system
CN106535666B (en) * 2014-07-14 2019-11-19 细田工业株式会社 Food materials cleaning device

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