JPH02269564A - Grinding device for semiconductor wafer - Google Patents
Grinding device for semiconductor waferInfo
- Publication number
- JPH02269564A JPH02269564A JP1090387A JP9038789A JPH02269564A JP H02269564 A JPH02269564 A JP H02269564A JP 1090387 A JP1090387 A JP 1090387A JP 9038789 A JP9038789 A JP 9038789A JP H02269564 A JPH02269564 A JP H02269564A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- cooling liquid
- outlet
- semiconductor wafer
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000110 cooling liquid Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 25
- 239000002826 coolant Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 239000000498 cooling water Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、研削砥石の砥面に冷却液を導入して被削材た
る半導体ウェーハを冷却しながら研削する半導体ウェー
ハの研削装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor wafer grinding apparatus that introduces a cooling liquid to the grinding surface of a grinding wheel to cool and grind a semiconductor wafer as a workpiece.
従来この種の研削装置にあっては、冷却水の入口温度と
出口温度を検出して研削温度を計測する思想は無かった
。被削材たる半導体ウェーハを冷却する場合、流入口か
ら冷却水を流し続け、吸熱後は機器の底部に設けたトレ
ンパンで受けるようにしていて、吸熱後の冷却水を積極
的に集水しようとする構造のものは存在しなかった。Conventionally, in this type of grinding device, there was no concept of measuring the grinding temperature by detecting the inlet temperature and outlet temperature of the cooling water. When cooling semiconductor wafers, which are the workpiece material, cooling water continues to flow from the inlet, and after the heat has been absorbed, it is collected by a trench pan installed at the bottom of the equipment, in order to actively collect the cooling water after it has been absorbed. There was no such structure.
半導体ウェーハの研削加工、特に、GaAs半導体ウェ
ーハの回路パターン形成後ダインレグ前のいわゆるバッ
クグラインドにおいては、回路パターンも完成されてお
り、ここでウェーハを損傷することは歩留まりの点で大
きな問題となる。In the grinding process of semiconductor wafers, particularly in so-called back-grinding after circuit pattern formation on GaAs semiconductor wafers and before dyne leg, the circuit pattern has already been completed, and damage to the wafer during this process poses a major problem in terms of yield.
しかるに、半導体ウェーハの研削加工に際し、半導体ウ
ェーハに発生する組織的変形、研削焼け、研削割れ又は
残留応力の遺留等の原因か、その研削により発生する研
削熱によってもたらされることが知られており、また、
研削異常が発生した場合、急激に研削熱か上Hすること
も経験的に良く知られている。このことから上記のよう
な不具合を無くすため、あるいは研削異常を発見するた
めにも、研削温度を計δ1りすることか必要となってき
た。However, it is known that during the grinding process of semiconductor wafers, structural deformation, grinding burn, grinding cracks, residual stress, etc. that occur in the semiconductor wafer are caused by the grinding heat generated by the grinding. Also,
It is well known from experience that when a grinding abnormality occurs, the grinding heat increases rapidly. For this reason, it has become necessary to measure the grinding temperature by δ1 in order to eliminate the above-mentioned problems or to discover grinding abnormalities.
研削温度の計測では、半導体ウェーハに直接温度計を接
触させる方法は困難を伴うため、簡単かつ確実な方法と
して、冷却液の入口温度と出口温度の温度差をδI11
定し、流量との関係から研削温度求めることか考えられ
る。しかし、従来の研削装置にあっては、吸熱後の冷却
液を積極的に集水する構造にはなっておらず研削温度の
計−tllには不都合なものであった。すなわち、機器
底部のドレンパンを介して流出口に冷却液を集水したと
きには、冷却液は停溜等によりすでにかなりの放熱がな
されていたり、他の内部機器の熱的影響を受けていたり
していて、上記出口温度の測定か不正確になることか想
定される。When measuring the grinding temperature, it is difficult to directly contact the semiconductor wafer with a thermometer, so a simple and reliable method is to measure the temperature difference between the inlet temperature and the outlet temperature of the cooling liquid by δI11
It may be possible to calculate the grinding temperature from the relationship with the flow rate. However, the conventional grinding apparatus does not have a structure that actively collects the coolant after absorbing heat, which is inconvenient for measuring the grinding temperature. In other words, when the coolant is collected at the outlet through the drain pan at the bottom of the device, the coolant may have already dissipated a considerable amount of heat due to stagnation, or may have been thermally affected by other internal devices. Therefore, it is assumed that the measurement of the outlet temperature described above may be inaccurate.
本発明は、吸熱後の冷却液を積極的に集水するようにし
て、正確な研削温度を求め得る半導体ウェーハの研削装
置を提供することをその目的とする。An object of the present invention is to provide a semiconductor wafer grinding apparatus that can obtain an accurate grinding temperature by actively collecting a cooling liquid after absorbing heat.
本発明は」二記liI的を達成すべく、研削砥石の砥面
に流出口を介して冷却液を導入し、回転テーブルのステ
ージの中央に吸着載置した被削材たる半導体ウェーハを
冷却しなから研削する半導体つ工−ハの研削装置におい
て、ステージの周縁部を上方に延用して形成した周壁と
、当該周壁の内側と回転テーブルの側面に形成した放流
口とを連通ずる連通流路と、当該放流口の回転軌跡に沿
わせて設けた集水樋と、冷却液の流入口の上流側と集水
樋に連なる流出口の下流側とにそれぞれ設けた温度検出
手段とを備えたことを特徴とする。In order to achieve the above objectives, the present invention introduces a cooling liquid to the grinding surface of a grinding wheel through an outlet to cool a semiconductor wafer, which is a workpiece material, and is placed by suction at the center of a stage of a rotary table. In a grinding device for a semiconductor device that grinds from scratch, a continuous flow that communicates between a peripheral wall formed by extending the peripheral edge of a stage upward and an outlet formed on the inside of the peripheral wall and a side surface of a rotary table. a water collection gutter provided along the rotation locus of the outlet, and temperature detection means provided respectively on the upstream side of the coolant inlet and the downstream side of the outlet connected to the water collection gutter. It is characterized by:
流入口から研削砥石の砥面に導かれた冷却液は、被削祠
たる半導体ウェーハを冷却し、回転テーブルのステージ
から連通流路、放流口、そして集水樋に導かれて流出口
に至る。The cooling liquid led from the inlet to the grinding surface of the grinding wheel cools the semiconductor wafer to be ground, and is led from the stage of the rotary table to the communication channel, the outlet, and the water collection gutter to the outlet. .
ここで、ステージの周縁部に周壁を形成することにより
、回転テーブルの遠心力により周縁部に向って流れる冷
却液は、周壁に邪魔されてステージの外側に流れ出ずこ
とがない。また、周壁の内側と放流口とを連通ずる連通
流路を形成することにより、冷却液を周壁の内側から回
転テーブルの外側に導くことができる。更に、放流口の
回転軌跡に沿イっせて集水樋を設けることにより、回転
テーブルの外側に導びかれた吸熱後の冷却水をすべて一
箇所に集めることができる。そして、流入口及び流出口
にそれぞれ温度検出手段とを設ければ、冷却水の入口温
度と出口温度を正確に測定することができる。By forming the peripheral wall on the peripheral edge of the stage, the cooling liquid flowing toward the peripheral edge due to the centrifugal force of the rotary table is not obstructed by the peripheral wall and does not flow out to the outside of the stage. Furthermore, by forming a communication channel that communicates the inside of the peripheral wall with the outlet, the cooling liquid can be guided from the inside of the peripheral wall to the outside of the rotary table. Furthermore, by providing a water collection gutter along the rotation locus of the outlet, all the cooling water that has been led to the outside of the rotary table after absorbing heat can be collected in one place. If temperature detection means are provided at the inlet and the outlet, respectively, the inlet and outlet temperatures of the cooling water can be accurately measured.
本発明を、回路パターン形成後ダイシング工程前に半導
体ウェーハを所定の厚さに研削する研削装置に実施した
場合について説明する。A case will be described in which the present invention is implemented in a grinding apparatus that grinds a semiconductor wafer to a predetermined thickness after forming a circuit pattern and before a dicing process.
第1図に示すように、半導体ウェーハWの研削装置]は
、半導体ウェーハWを吸着載置する回転テーブル2と、
その上方に半導体ウェーハWを研削する研削砥石3とを
備えており、回転テーブル2は駆動装置(図示せず)に
より半導体ウェーハWを載置した状態で回転1.、また
、研削砥石3は駆動装置(図示せず)により回転しなが
ら昇降動する。この構成により、半導体ウェーハWは研
削の際に自らゆっくり回転し、回転しながら徐々に下降
してくる研削砥石3により、所定の厚さまでその表面で
ある(100)面が均一に研削される。As shown in FIG. 1, the semiconductor wafer W grinding apparatus] includes a rotary table 2 on which the semiconductor wafer W is placed by suction;
A grinding wheel 3 for grinding the semiconductor wafer W is provided above the rotary table 2, and the rotary table 2 is rotated once with the semiconductor wafer W placed thereon by a drive device (not shown). Further, the grinding wheel 3 is moved up and down while being rotated by a drive device (not shown). With this configuration, the semiconductor wafer W rotates slowly by itself during grinding, and the (100) surface thereof is uniformly ground to a predetermined thickness by the grinding wheel 3 that gradually descends while rotating.
一方、研削に伴う半導体ウェーハWの熱的影響を排除す
べく、研削により発生する研削熱は、半導体ウェーハW
と研削砥石3とで構成される研削面Sに導入した冒純水
等の冷却水により除去される。On the other hand, in order to eliminate the thermal influence of the semiconductor wafer W due to grinding, the grinding heat generated by grinding is
It is removed by cooling water such as contaminated water introduced into the grinding surface S composed of the grinding wheel 3 and the grinding wheel 3.
この冷却水は流入口4から研削面Sに導入され、研削面
Sで研削熱を吸収した後、回転テーブル2のステージ5
上から連通流路6を通って、サイドテーブル7の内側に
取付けた集水樋8に導かれ、流出口9を経て系外へ排水
される。This cooling water is introduced from the inlet 4 to the grinding surface S, and after absorbing the grinding heat on the grinding surface S,
The water passes through a communication channel 6 from above, is led to a water collection gutter 8 attached to the inside of the side table 7, and is drained out of the system through an outlet 9.
これを詳述するに、回転テーブル2のステージ5には、
その周縁部を上方に延用して形成した周壁5aと、周壁
5aの内側にこの周壁5aに沿って形成した環状溝5b
と、環状溝5b内に集水樋8に連なる複数の排水口5c
とか形成されており、回転テーブル2の遠心力で中心か
ら外に向って流れる冷却水を周壁5aて食止め、環状溝
5bに集め、排水口5Cから集水樋8側に導く。また、
回転テーブル2には、各排水口5cと回転テーブル2の
側面に形成した放流口10とを連通する連通流路6がそ
の内部に形成されている。To explain this in detail, stage 5 of rotary table 2 includes:
A peripheral wall 5a formed by extending the peripheral edge portion upward, and an annular groove 5b formed inside the peripheral wall 5a along the peripheral wall 5a.
and a plurality of drainage ports 5c connected to the water collection gutter 8 in the annular groove 5b.
The cooling water flowing outward from the center due to the centrifugal force of the rotary table 2 is stopped by the peripheral wall 5a, collected in the annular groove 5b, and guided to the water collection gutter 8 side from the drain port 5C. Also,
The rotary table 2 has a communication channel 6 formed therein, which communicates each drain port 5c with a discharge port 10 formed on the side surface of the rotary table 2.
集水樋8は、当該回転テーブル2とこれを囲繞するサイ
ドテーブル7との間のサイドテーブル7側に取付(づら
れており、回転テーブル2と共に回転する放流口10の
回転奇跡に対応すべく環状に形成されている。また、集
水樋8には、冷却水が流出口9に導かれるように勾配が
設けられている。The water collection gutter 8 is installed on the side table 7 side between the rotary table 2 and the side table 7 surrounding it, and is designed to cope with the rotation of the outlet 10 that rotates together with the rotary table 2. It is formed in an annular shape.The water collection gutter 8 is also provided with a slope so that the cooling water is guided to the outlet 9.
一方、流入口4に連なる流入管路11と、流出口9に連
なる流出管路12には、それぞれ温度検出手段である流
入側温度計13と流出側温度計14とが設けられ、入口
温度と出口温度とを測定できるようにしている。On the other hand, an inlet pipe line 11 connected to the inlet port 4 and an outlet pipe line 12 connected to the outlet port 9 are provided with an inlet side thermometer 13 and an outlet side thermometer 14, respectively, which serve as temperature detection means. The outlet temperature can be measured.
このようにすれば、両温度計1.3.14で測定した人
口温度と出口温度の温度差と、冷却液の流量とから研削
温度を計測することができ、これをモニターすれば、研
削温度と半導体ウェーハWの研削割れや残留応力による
反り等の不良品の発生頻度との関係を数値的に求めるこ
とができる。In this way, the grinding temperature can be measured from the temperature difference between the population temperature and the outlet temperature measured with both thermometers 1.3.14 and the flow rate of the coolant, and if this is monitored, the grinding temperature The relationship between this and the frequency of occurrence of defective products such as grinding cracks and warping due to residual stress in the semiconductor wafer W can be numerically determined.
本実施例では、更に図面に示す如く、両温度計1314
で測定した入口温度と1」つ口温度とが、マイクロコン
ピュータ]5に入力され、ここで研削温度に基づいた演
算処理がなされ、各種操作部16、(例えば、研削砥石
3の駆動装置、回転テブル2の駆動装置、或いは冷却水
の流量調整装置)に制御信号を送り、研削砥石3の回転
速度及び送り速度、回転テーブル2の回転速度、或いは
冷却水の流量等を選択的に、又は総合的に制御する。In this embodiment, as shown in the drawings, both thermometers 1314
The inlet temperature and the mouth temperature measured by A control signal is sent to the drive device of the table 2 (or the flow rate adjustment device of the cooling water), and the rotation speed and feed speed of the grinding wheel 3, the rotation speed of the rotary table 2, the flow rate of the cooling water, etc. are controlled selectively or collectively. control.
このようにすれば、半導体ウェーハWの研削不良を大幅
に低減できる。In this way, grinding defects of the semiconductor wafer W can be significantly reduced.
以上のように本発明によれば、吸熱後の冷却液を積極的
に集水して、他の内部機器からの熱的影響や放熱をでき
るだけ少なくすることにより、冷却液の人口温度と共に
出口温度を正確に測定でき、研削温度と不良品の発生頻
度との関係を体系化できる効果を有する。As described above, according to the present invention, by actively collecting the coolant after absorbing heat and minimizing the thermal influence and heat radiation from other internal devices, the temperature at the outlet as well as the population temperature of the coolant can be reduced. can be measured accurately, and has the effect of systematizing the relationship between grinding temperature and the frequency of defective products.
第1図は本発明を実施した半導体ウエーノ\の研削装置
の概略図である。
1、研削装置、2・回転テーブル、3・・・研削砥石、
4・・・流入口、5・・・ステージ、5a・・・周壁、
6 ・連通流路、7・・サイドテーブル、8・・集水樋
、9・・・流1]10、コ−0・・・放流口、]3・・
・流入側温度計、14・・流出側温度計、W・・半導体
ウエーノ\。
代理人弁理士 長谷用 芳 樹6nd−FIG. 1 is a schematic diagram of a semiconductor wafer grinding apparatus embodying the present invention. 1. Grinding device, 2. Rotary table, 3. Grinding wheel,
4... Inlet, 5... Stage, 5a... Peripheral wall,
6 - Communication channel, 7... Side table, 8... Water collection gutter, 9... Stream 1] 10, Co-0... Outlet, ] 3...
・Inflow side thermometer, 14...Outflow side thermometer, W...Semiconductor waeno\. Representative Patent Attorney Yoshiki Hase 6th-
Claims (1)
転テーブルのステージの中央に吸着載置した被削材たる
半導体ウェーハを冷却しながら研削する半導体ウェーハ
の研削装置において、 ステージの周縁部を上方に延出して形成した周壁と、当
該周壁の内側と回転テーブルの側面に形成した放流口と
を連通する連通流路と、当該放流口の回転軌跡に沿わせ
て設けた集水樋と、冷却液の流入口の上流側と集水樋に
連なる流出口の下流側とにそれぞれ設けた温度検出手段
とを備えたことを特徴とする半導体ウェーハの研削装置
。[Scope of Claims] Grinding of semiconductor wafers, in which a cooling liquid is introduced into the grinding surface of a grinding wheel through an outlet, and the semiconductor wafer, which is a workpiece material, is placed by suction at the center of the stage of a rotary table, and is ground while cooling it. In the apparatus, a peripheral wall formed by extending the periphery of the stage upward, a communication channel that communicates the inside of the peripheral wall with a discharge port formed on the side surface of the rotary table, and a communication flow path that extends along the rotation trajectory of the discharge port. 1. A semiconductor wafer grinding apparatus comprising: a water collection gutter provided with a water collection gutter; and temperature detection means provided respectively on the upstream side of a coolant inlet and the downstream side of an outlet connected to the water collection gutter.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9038789A JP2602948B2 (en) | 1989-04-10 | 1989-04-10 | Semiconductor wafer grinding machine |
CA002012878A CA2012878C (en) | 1989-03-24 | 1990-03-22 | Apparatus for grinding semiconductor wafer |
AU52120/90A AU637087B2 (en) | 1989-03-24 | 1990-03-22 | Apparatus for grinding semiconductor wafer |
EP90105542A EP0388972B1 (en) | 1989-03-24 | 1990-03-23 | Apparatus for grinding semiconductor wafer |
DE69024681T DE69024681T2 (en) | 1989-03-24 | 1990-03-23 | Grinding device for semiconductor wafers |
DK90105542.6T DK0388972T3 (en) | 1989-03-24 | 1990-03-23 | Apparatus for grinding a semiconductor disc |
KR1019900004924A KR930010977B1 (en) | 1989-03-24 | 1990-04-10 | Polishing apparatus of semicondcutor wafer |
US07/747,494 US5113622A (en) | 1989-03-24 | 1991-08-19 | Apparatus for grinding semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9038789A JP2602948B2 (en) | 1989-04-10 | 1989-04-10 | Semiconductor wafer grinding machine |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02269564A true JPH02269564A (en) | 1990-11-02 |
JP2602948B2 JP2602948B2 (en) | 1997-04-23 |
Family
ID=13997169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9038789A Expired - Lifetime JP2602948B2 (en) | 1989-03-24 | 1989-04-10 | Semiconductor wafer grinding machine |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2602948B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068690A (en) * | 2001-08-23 | 2003-03-07 | Disco Abrasive Syst Ltd | Grinding apparatus |
JP2013193175A (en) * | 2012-03-21 | 2013-09-30 | Mitsubishi Heavy Ind Ltd | Cooling device, machining device and cooling oil flow rate determination method |
-
1989
- 1989-04-10 JP JP9038789A patent/JP2602948B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068690A (en) * | 2001-08-23 | 2003-03-07 | Disco Abrasive Syst Ltd | Grinding apparatus |
JP4697839B2 (en) * | 2001-08-23 | 2011-06-08 | 株式会社ディスコ | Grinding equipment |
JP2013193175A (en) * | 2012-03-21 | 2013-09-30 | Mitsubishi Heavy Ind Ltd | Cooling device, machining device and cooling oil flow rate determination method |
Also Published As
Publication number | Publication date |
---|---|
JP2602948B2 (en) | 1997-04-23 |
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