JPH02250771A - Grinder for semiconductor wafer - Google Patents
Grinder for semiconductor waferInfo
- Publication number
- JPH02250771A JPH02250771A JP1072906A JP7290689A JPH02250771A JP H02250771 A JPH02250771 A JP H02250771A JP 1072906 A JP1072906 A JP 1072906A JP 7290689 A JP7290689 A JP 7290689A JP H02250771 A JPH02250771 A JP H02250771A
- Authority
- JP
- Japan
- Prior art keywords
- grinding
- semiconductor wafer
- cooling liquid
- temperature
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000110 cooling liquid Substances 0.000 claims abstract description 24
- 238000001514 detection method Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 31
- 230000002950 deficient Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000004185 liver Anatomy 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、研削砥石の砥面に冷却液を導入して被削材た
る半導体ウェーハを冷却しながら研削する半導体ウェー
ハの研削装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor wafer grinding apparatus that introduces a cooling liquid to the grinding surface of a grinding wheel to cool and grind a semiconductor wafer as a workpiece.
従来この種の研削装置にあっては、被削材たる半導体ウ
ェーハを冷却する場合、研削砥石の砥面に一定量の冷却
液を流し続けるようにしている。Conventionally, in this type of grinding apparatus, when cooling a semiconductor wafer as a workpiece, a certain amount of cooling liquid is continuously flowed onto the grinding surface of a grinding wheel.
半導体ウェーハの研削加工、特に、ＧａＡｓ半導体ウェ
ーハの回路パターン形成後ダイシング前のいわゆるバッ
クグラインドにおいては、回路パターンも完成されてお
り、バックグラインドにおいてウェーハを損傷すること
は歩留まりの点で大きな問題である。In the grinding process of semiconductor wafers, especially in so-called back-grinding after circuit pattern formation and before dicing of GaAs semiconductor wafers, the circuit pattern has already been completed, and damaging the wafer during back-grinding is a big problem in terms of yield. .
ところで、半導体ウェーハに発生する組織的変形、研削
焼け、研削割れ又は残留応力の遺留等の原因が、その研
削により発生する過度の研削熱によってもたらされるこ
とが知られており、また、研削異常が発生した場合、急
激に研削熱が上昇することも経験的に良く知られている
。Incidentally, it is known that the causes of structural deformation, grinding burn, grinding cracks, residual stress, etc. that occur in semiconductor wafers are caused by excessive grinding heat generated by the grinding, and that grinding abnormalities are It is also well known from experience that when grinding occurs, the grinding heat increases rapidly.
したがって、従来のような単に冷却液を流し続けるもの
にあっては、急激な研削熱の上昇等に対応できず半導体
ウェーハ・の不良品を多数発生させるおそれがあり、こ
れを見越して、冷却液の水量を増やしておくことは、冷
却液自体高価なものであるし、その廃液処理にも費用が
かかりかなりの無駄を生ずることとなる。Therefore, with conventional machines that simply keep the coolant flowing, there is a risk that a large number of semiconductor wafers will be defective because they cannot cope with the rapid increase in grinding heat. Increasing the amount of water required is expensive because the cooling liquid itself is expensive, and the treatment of waste liquid is also expensive, resulting in considerable waste.
本発明は、冷却液の流量を調節して研削温度を一定に保
つことにより、半導体ウェーハに発生する組織的変形、
研削焼け、研削割れ又は残留応力の遺留等を防止すると
共に、冷却液の節約を可能にする半導体ウェーハの研削
装置を提供することをその目的とする。The present invention reduces the structural deformation that occurs in semiconductor wafers by adjusting the flow rate of the cooling liquid and keeping the grinding temperature constant.
It is an object of the present invention to provide a semiconductor wafer grinding apparatus that prevents grinding burn, grinding cracks, residual stress, etc., and allows saving of cooling fluid.
本発明は上記目的を達成すべく、研削に際し、研削砥石
の砥面に冷却液を導入して被削材たる半導体ウェーハを
冷却する半導体ウェーハの研削装置において、半導体ウ
ェーハの研削温度を検出する温度検出手段と、当該温度
検出手段の信号により冷却液の流量を決定する制御手段
と、当該制御手段により制御される冷却液の流量調整手
段とを備えたことを特徴とする。In order to achieve the above object, the present invention provides a semiconductor wafer grinding apparatus that cools a semiconductor wafer as a workpiece material by introducing a cooling liquid into the grinding surface of a grinding wheel during grinding. It is characterized by comprising a detection means, a control means for determining the flow rate of the coolant based on a signal from the temperature detection means, and a flow rate adjustment means for the coolant controlled by the control means.
〔作用〕
温度検出手段によりｌＰｊ定された半導体ウエーノ＼の
研削温度に基づいて、制御手段により冷却液の流量を決
定し、この決定値に対し流量調整手段を操作して冷却液
の流量を制御する。[Operation] Based on the grinding temperature of the semiconductor wafer determined by the temperature detection means, the flow rate of the cooling liquid is determined by the control means, and the flow rate of the cooling liquid is controlled by operating the flow rate adjustment means with respect to this determined value. do.
このように、いわゆるフィードバック制御を行えば、研
削温度の上下に対応して迅速に冷却液を増加し、半導体
ウェーハを常に適切な研削温度に保つことができ、また
、冷却液も必要最小限の水量に保つことができる。In this way, by performing so-called feedback control, it is possible to quickly increase the amount of cooling liquid in response to changes in the grinding temperature, and to keep the semiconductor wafer at an appropriate grinding temperature. Can maintain the water level.
本発明を、ダイシング工程前に半導体ウエーノ＼を所定
の厚さに研削する研削装置に実施した場合について説明
する。A case will be described in which the present invention is implemented in a grinding apparatus that grinds a semiconductor wafer to a predetermined thickness before a dicing process.
第１図を参照して第１の実施例について説明する。半導
体ウェーハＷの研削装置１は、半導体つ工−ハＷを吸着
により載置するステージ２と、その上方に半導体ウェー
ハＷを研削する研削砥石３とを備えており、ステージ２
は回転軸４に連結された駆動装置（図示せず）により半
導体ウエーノ＼Ｗを載置した状態で回転し、また、研削
砥石３は駆動軸５に連結された駆動装置（図示せず）に
より回転しながら昇降動する。したがって、半導体ウェ
ーハＷは、研削の際に自らゆっくり回転し、逆回転しな
がら除々に下降してくる研削砥石３により、所定の厚さ
までその表面である（１００）面を均一に研削される。A first embodiment will be described with reference to FIG. A grinding apparatus 1 for semiconductor wafers W includes a stage 2 on which a semiconductor tool W is placed by suction, and a grinding wheel 3 above the stage 2 for grinding the semiconductor wafer W.
is rotated by a drive device (not shown) connected to the rotating shaft 4 with the semiconductor wafer placed thereon, and the grinding wheel 3 is rotated by a drive device (not shown) connected to the drive shaft 5. It moves up and down while rotating. Therefore, during grinding, the semiconductor wafer W rotates slowly by itself, and its (100) surface is uniformly ground to a predetermined thickness by the grinding wheel 3, which gradually descends while rotating in the opposite direction.
一方、研削に伴う半導体ウェーハＷの熱的影響を排除す
べく、研削により発生する研削熱は半導体ウェーハＷと
研削砥石３とで構成される研削面Ｓに導入した高純水等
の冷却液により除去される。On the other hand, in order to eliminate the thermal influence of the semiconductor wafer W due to the grinding, the grinding heat generated by the grinding is removed by a cooling liquid such as high-purity water introduced into the grinding surface S composed of the semiconductor wafer W and the grinding wheel 3. Ru.
冷却液は、図外の冷却液供給装置を供給源として、流入
管路６から吐出ロアを経て研削面Ｓに導入され、研削面
Ｓで半導体ウェーハＷの研削熱を吸収し、排水口８を経
て流出管路９から系外へ排出される。The cooling liquid is introduced into the grinding surface S from the inflow pipe 6 through the discharge lower using a cooling liquid supply device (not shown) as a supply source, absorbs the grinding heat of the semiconductor wafer W at the grinding surface S, and drains the drain port 8. After that, it is discharged from the system through the outflow pipe 9.
また、流入管路６と流出管路９には、それぞれ研削温度
検出手段を構成する流入側温度計１０と流出側温度計１
１とが設けられ、また、流入管路６には流入側温度計１
０の上流側に流量調整手段である流ｍ調整弁１２が設け
られている。そして、両温度肝１０．１１からの検出信
号は、マイクロコンピュータ１３に導かれ両温度肝１０
．１１のと反差と流量調整弁１２のバルブ開度から計算
される流量とで研削温度が算定される。次いで、マイク
ロコンピュータ１３では、この研削温度に基づいて目標
の研削温度にすべく演算処理がなされ、適切な流量が導
き出され、その制御信号により流量調整弁１２が駆動さ
れてそのバルブ開度が調節され、冷却液の流量調整がな
される。Further, the inlet pipe line 6 and the outlet pipe line 9 are provided with an inlet side thermometer 10 and an outlet side thermometer 1, respectively, which constitute grinding temperature detection means.
1 is provided in the inflow pipe line 6, and an inflow side thermometer 1 is provided in the inflow pipe line 6.
A flow m adjustment valve 12, which is a flow rate adjustment means, is provided on the upstream side of 0. Then, the detection signals from both temperature livers 10.11 are guided to the microcomputer 13, and the detection signals from both temperature livers 10.
．． The grinding temperature is calculated based on the difference between 11 and the flow rate calculated from the valve opening degree of the flow rate adjustment valve 12. Next, the microcomputer 13 performs arithmetic processing to reach the target grinding temperature based on this grinding temperature, derives an appropriate flow rate, and uses the control signal to drive the flow rate regulating valve 12 to adjust its valve opening. and the flow rate of the coolant is adjusted.
なお、研削温度は正確に測定すためスムージング等の計
算機処理を行い、誤作動を極力防止するようにしている
。In order to accurately measure the grinding temperature, computer processing such as smoothing is performed to prevent malfunctions as much as possible.
このようにして、流ｆｆｉ調整弁１２を研削温度との関
係でフィードバック制御することにより研削温度が常に
一定に保たれる。In this way, the grinding temperature is always kept constant by feedback controlling the flow ffi regulating valve 12 in relation to the grinding temperature.
次ぎに、第２図を参照して第２の実施例について説明す
る。この実施例は、冷却液を循環使用し冷却液の消費を
極力少なくするようにしたものである。Next, a second embodiment will be described with reference to FIG. In this embodiment, the cooling liquid is used in circulation to minimize the consumption of the cooling liquid.
すなわち、流出管路９の下流端に設けた貯溜槽１４に使
用済みの冷却液をいったん貯溜し、これを圧送ポンプ１
５により流入管路６から研削面Ｓに導入する。流入管路
６の途中にはフィルタ１６と補給液管１７とが設けられ
ており、研削屑は、貯溜槽１４に沈殿させると共に、こ
のフィルタ１６により取除かれる。補給液管１７からは
常に少量の冷却液が補給され、この補給により溢れた分
は貯溜槽１４のオーバーフロー１８から系外に排出され
る。That is, the used cooling liquid is temporarily stored in the storage tank 14 provided at the downstream end of the outflow pipe 9, and then transferred to the pressure pump 1.
5 into the grinding surface S from the inflow pipe 6. A filter 16 and a replenishment liquid pipe 17 are provided in the middle of the inflow pipe 6, and the grinding debris is deposited in the storage tank 14 and removed by the filter 16. A small amount of cooling liquid is always replenished from the replenishment liquid pipe 17, and the overflowing amount due to this replenishment is discharged from the overflow 18 of the storage tank 14 to the outside of the system.
この実施例では研削熱を管路等から自然放熱させるため
、所定の研削温度で絶えず研削できるように予め流入管
路に放熱器１９を設けて、定常状態の研削熱を放熱器１
９や管路から放熱するようにしている。そして、そのと
きの冷却液の温度を貯溜槽１４に設けた温度計２０でモ
ニターしておいて、この温度から急激な温度上昇があっ
たときは、マイクロコンピュータ１３からの制御信号に
より、補給液管１７の途中に介設した流量調整弁１２を
開いて補給液量を増し、温度計２０の温度を一定に、す
なわち研削温度を一定に保つようにしている。In this embodiment, in order to naturally dissipate the grinding heat from the conduit etc., a radiator 19 is provided in advance in the inflow conduit so that grinding can be carried out continuously at a predetermined grinding temperature.
The heat is radiated from 9 and the pipes. The temperature of the coolant at that time is monitored with a thermometer 20 installed in the storage tank 14, and when there is a sudden temperature rise from this temperature, a control signal from the microcomputer 13 sends a signal to the replenishing liquid. A flow regulating valve 12 interposed in the middle of the pipe 17 is opened to increase the amount of replenishing liquid, thereby keeping the temperature of the thermometer 20 constant, that is, the grinding temperature constant.
なお、この場合、温度計２０を貯溜槽１４に設けたが流
出管路９に設けるようにしてもよい。Although the thermometer 20 is provided in the storage tank 14 in this case, it may also be provided in the outflow pipe 9.
以上のように本発明によれば、半導体ウェーハの研削温
度を一定に保つことにより、半導体つ工−ハの不良品の
発生開度を少なくすることができて、歩留まりを向上で
き、しかも、冷却液の無駄な消費を防止する効果を有す
る。As described above, according to the present invention, by keeping the grinding temperature of the semiconductor wafer constant, it is possible to reduce the degree of opening in which defective products occur in the semiconductor wafer, thereby improving the yield. It has the effect of preventing wasteful consumption of liquid.
第１図は本発明を実施した半導体ウェーハの研削装置の
概略図、第２図は他の実施例の半導体つ工−ハの研削装
置の概略図である。
１・・・研削装置、２・・・ステージ、３・・・研削砥
石、６・・・流入管路、９・・・流出管路、１０・・・
流入側温度計、１１・・・流出側温度計、１２・・・流
′ｍ調整弁、１３・・・マイクロコンピュータ。FIG. 1 is a schematic diagram of a semiconductor wafer grinding apparatus according to the present invention, and FIG. 2 is a schematic diagram of a semiconductor wafer grinding apparatus according to another embodiment. DESCRIPTION OF SYMBOLS 1... Grinding device, 2... Stage, 3... Grinding wheel, 6... Inflow pipe, 9... Outflow pipe, 10...
Inlet side thermometer, 11...Outlet side thermometer, 12...Flow adjustment valve, 13...Microcomputer.
Claims (1)
たる半導体ウェーハを冷却する半導体ウェーハの研削装
置において、 半導体ウェーハの研削温度を検出する温度検出手段と、
当該温度検出手段の信号に基づいて冷却液の流量を決定
する制御手段と、当該制御手段により操作される冷却液
の流量調整手段とを備えたことを特徴とする半導体ウェ
ーハの研削装置。[Scope of Claims] A semiconductor wafer grinding apparatus that cools a semiconductor wafer as a workpiece by introducing a cooling liquid to the grinding surface of a grinding wheel during grinding, comprising: temperature detection means for detecting the grinding temperature of the semiconductor wafer;
A semiconductor wafer grinding apparatus comprising: a control means for determining a flow rate of a cooling liquid based on a signal from the temperature detection means; and a flow rate adjustment means for the cooling liquid operated by the control means.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1072906A JP2674665B2 (en) | 1989-03-24 | 1989-03-24 | Semiconductor wafer grinding machine |
| AU52120/90A AU637087B2 (en) | 1989-03-24 | 1990-03-22 | Apparatus for grinding semiconductor wafer |
| CA002012878A CA2012878C (en) | 1989-03-24 | 1990-03-22 | Apparatus for grinding semiconductor wafer |
| DK90105542.6T DK0388972T3 (en) | 1989-03-24 | 1990-03-23 | Apparatus for grinding a semiconductor disc |
| EP90105542A EP0388972B1 (en) | 1989-03-24 | 1990-03-23 | Apparatus for grinding semiconductor wafer |
| DE69024681T DE69024681T2 (en) | 1989-03-24 | 1990-03-23 | Grinding device for semiconductor wafers |
| KR1019900004924A KR930010977B1 (en) | 1989-03-24 | 1990-04-10 | Polishing apparatus of semicondcutor wafer |
| US07/747,494 US5113622A (en) | 1989-03-24 | 1991-08-19 | Apparatus for grinding semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1072906A JP2674665B2 (en) | 1989-03-24 | 1989-03-24 | Semiconductor wafer grinding machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02250771A true JPH02250771A (en) | 1990-10-08 |
| JP2674665B2 JP2674665B2 (en) | 1997-11-12 |
Family
ID=13502863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1072906A Expired - Lifetime JP2674665B2 (en) | 1989-03-24 | 1989-03-24 | Semiconductor wafer grinding machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2674665B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999011432A1 (en) * | 1997-08-29 | 1999-03-11 | Infineon Technologies Ag | Device and method for heating a liquid or semiliquid polishing agent, and device for polishing wafers |
| KR100457718B1 (en) * | 1995-07-03 | 2005-04-06 | 미쓰비시 마테리알 가부시키가이샤 | Method and apparatus for manufacturing silicon wafer |
| DE102007030958A1 (en) | 2007-07-04 | 2009-01-08 | Siltronic Ag | Method for grinding semiconductor wafers |
| CN105881131A (en) * | 2016-06-08 | 2016-08-24 | 济源石晶光电频率技术有限公司 | Automatic frequency measurement type wafer polishing device |
| CN110076683A (en) * | 2013-08-27 | 2019-08-02 | 株式会社荏原制作所 | Grinding device |
| CN111660165A (en) * | 2020-06-23 | 2020-09-15 | 刘子龙 | Lens grinding machine capable of changing solvent output through rotating shaft rotating speed |
| CN115091287A (en) * | 2022-07-15 | 2022-09-23 | 华海清科股份有限公司 | Ultra-precise grinding parameter adjusting method and grinding system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201868A (en) * | 1984-03-23 | 1985-10-12 | Hitachi Ltd | Polishing of wafer |
-
1989
- 1989-03-24 JP JP1072906A patent/JP2674665B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60201868A (en) * | 1984-03-23 | 1985-10-12 | Hitachi Ltd | Polishing of wafer |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100457718B1 (en) * | 1995-07-03 | 2005-04-06 | 미쓰비시 마테리알 가부시키가이샤 | Method and apparatus for manufacturing silicon wafer |
| WO1999011432A1 (en) * | 1997-08-29 | 1999-03-11 | Infineon Technologies Ag | Device and method for heating a liquid or semiliquid polishing agent, and device for polishing wafers |
| US6257955B1 (en) | 1997-08-29 | 2001-07-10 | Infineon Technologies Ag | Apparatus and method for heating a liquid or viscous polishing agent, and device for polishing wafers |
| DE102007030958A1 (en) | 2007-07-04 | 2009-01-08 | Siltronic Ag | Method for grinding semiconductor wafers |
| JP2009016842A (en) * | 2007-07-04 | 2009-01-22 | Siltronic Ag | Method for grinding semiconductor wafer |
| US7666064B2 (en) | 2007-07-04 | 2010-02-23 | Siltronic Ag | Method for grinding semiconductor wafers |
| DE102007030958B4 (en) * | 2007-07-04 | 2014-09-11 | Siltronic Ag | Method for grinding semiconductor wafers |
| CN110076683A (en) * | 2013-08-27 | 2019-08-02 | 株式会社荏原制作所 | Grinding device |
| CN105881131A (en) * | 2016-06-08 | 2016-08-24 | 济源石晶光电频率技术有限公司 | Automatic frequency measurement type wafer polishing device |
| CN111660165A (en) * | 2020-06-23 | 2020-09-15 | 刘子龙 | Lens grinding machine capable of changing solvent output through rotating shaft rotating speed |
| CN115091287A (en) * | 2022-07-15 | 2022-09-23 | 华海清科股份有限公司 | Ultra-precise grinding parameter adjusting method and grinding system |
| CN115091287B (en) * | 2022-07-15 | 2023-12-29 | 华海清科股份有限公司 | Ultra-precise grinding parameter adjustment method and grinding system |
Also Published As
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|---|---|
| JP2674665B2 (en) | 1997-11-12 |
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