JPH02266549A - Semiconductor light emitting diode - Google Patents

Abstract

PURPOSE:To obtain an incoherent light with relatively high value of the degree of incoherence by incorporating sequentially small energy band gaps in first, second,... n-th regions of a second semiconductor crystalline layer. CONSTITUTION:Regions 3a in which first and second electrode layers 15, 16 of a second semiconductor crystalline layer 3 are opposed have first, second..., n-th regions M1-M2 sequentially having sequentially small energy band gaps. The first, second..., n-th regions respectively generate lights having bands with responsive wavelengths as centers, which are radiated as incoherent lights externally from light radiating end face 11. Thus, an incoherent light obtained by externally radiating from the end face is obtained with relatively high value of the degree of incoherence as compared with that of a conventional semiconductor light emitting diode.

Description

[Detailed description of the invention]

fAii Industrial Application Field The present invention 1 relates to a semiconductor light emitting diode which is obtained by emitting incoherent light to the outside.

[Prior Art 1] Conventionally, a semiconductor light emitting diode described below with reference to FIGS. 8 to 10 has been proposed. That is, for example, a semiconductor crystal substrate 1 having an n-type, a semiconductor crystal layer 2 formed on the semiconductor crystal substrate 1 in contact with it and having the same n-type as the semiconductor crystal substrate 1, and a semiconductor crystal layer 2 having the same n-type as the semiconductor crystal substrate 1; A semiconductor crystal layer 3 is formed on and in contact with the semiconductor crystal layer 3 and has a narrower energy band gap and a refractive index than the semiconductor crystal layer 2; A semiconductor crystal layer 4 having a wide energy bandgap, a low refractive index, and a p-type opposite to that of the semiconductor crystal layer 1; Semiconductor crystal layer 5 having a type
It has a rod 4 laminate 10 which has /f. In this case, as shown in FIG. 10, the semiconductor laminate 10 is formed in the longitudinal direction of the semiconductor laminate 10 (in FIG. 9, the direction is parallel to the rough surface, and in FIG. ) has a mesa-like shape rising from the semiconductor crystal layer 2 or the semiconductor crystal substrate 1 (in the figure, rising from the semiconductor crystal layer 2), In addition, semiconductor crystal layers 2 are placed on both the left and right sides of the mesa.
Or on the semiconductor crystal substrate 1 side, semiconductor crystal fr4
2 and 3 and the lower half of the semiconductor crystal Ff14, and have p-type semiconductor crystal layers 61- and 6R made of, for example, InP, and on these semiconductor crystal layers 6L and 6R, Semiconductor crystals VfJ7L and 7R are formed in contact with one half of the semiconductor crystal layer 4 and the semiconductor crystal layer 5, respectively, and are n-type and made of, for example, InP. Further, the semiconductor stack 10 has an end face extending perpendicularly to the thickness direction of the semiconductor stack 10 on one end side in the longitudinal direction as a light emitting end face 11; An antireflection film 12 is attached to the surface. Further, the semiconductor laminate 10 has an end face of the semiconductor crystal layers 5.4 and 3 on the other end side opposite to the light emitting end face 11g1l in the longitudinal direction, and an I in the thickness direction of the semiconductor Vi layer weight 0. It is placed on an inclined surface 14 extending diagonally with respect to the a-plane. Further, in the semiconductor stacked body 10 described above, the semiconductor crystal substrate 1 has a main surface formed of a (100) plane and is made of, for example, InP. Further, semiconductor crystal layers 2.3.4 and 5 are formed on the main surface of such a semiconductor crystal substrate 1 by a liquid phase epitaxial growth method, a vapor phase epitaxial growth method, a molecular beam epitaxial growth method, etc., and The semiconductor crystal layer 2 is made of, for example, InP. Further, in the semiconductor crystal layer 3, neither the n-type impurity nor the n-type impurity is intentionally introduced, or even if it is introduced, it is only introduced at a much lower concentration than in the semiconductor crystal layers 2 and 4. For example, it is made of InGaAsP system. Further, the semiconductor crystal layer 4 is made of, for example, nP. Further, the semiconductor layer 5 is made of, for example, an InGaAsP system into which n-type impurities are introduced at a higher concentration than that of the semiconductor crystal layer 4. Further, one main surface 10a of the semiconductor stack 10 described above
Above, therefore, on the soil surface of the semiconductor crystal layer 5, an electrode layer 15 extending also onto the semiconductor crystal layers 7L and 7R on the charging/discharging surface 11 in the longitudinal direction of the semiconductor VI layer body 10 is formed. It is attached to Ohmic. Moreover, the above-mentioned main surface 10a of the above-mentioned semiconductor stack 10
Another electrode layer 16 is formed on the main surface 10b of the semiconductor stack 10, which is opposite to the main surface 10b of the semiconductor laminate 10, and therefore on the surface of the semiconductor crystal substrate 1 opposite to the semiconductor crystal layer 2 side. It is arranged in an ohmic manner facing the electrode layer 15. In this case, the electric current 14ff116 has a main surface 10 as shown in the figure.
It may extend over a region not facing the electrode layer 15 on a. The above is the configuration of the conventionally proposed semicircular optical diode A-D. According to the semiconductor light emitting diode having such a configuration, if a required power source (not shown) with the positive side facing the electrode layer 15 is connected between the electrode layers 15 and 16, the current from the power source is transferred to the semiconductor light emitting diode. It flows into the semiconductor crystal U-plate 1 and the semiconductor crystal layers 2, 3, 4 and 5 of the stack 10 in the opposite order through the electrode layers 15 and 16. However, even though the rfi pole F415 extends over the semiconductor crystal layers 71 and 7R of the semiconductor stack 10, the current from the power source is the ffi source in this case.
Since the polarity to apply reverse bias to the pn junctions between L and 61 and between 7R and 6R is right, the semiconductor crystal layer 3 is applied to these semiconductor crystals FA7L and 6L, and 7R and 6R with σ (q path). Therefore, the current from the power supply narrowly flows through the semiconductor layer 3 of the semiconductor V1 layer 10. 3, the current flows mainly in the region M3a where the electrode layers 15 and 16 are opposed to each other. Therefore, the current that forms the semiconductor crystal layer 3 mainly flows in each part of the region 3a of the semiconductor crystal F13. I nGa
Light having a wavelength band of, for example, 1.5 μm centered on wavelength λ8 corresponding to the 1-energy bandgap Eg8 of the Asp system is generated. And some of those lights,
The region 111t3a is confined by the semiconductor crystal layers 2 and 4 and propagates toward the light emitting end face 11 side, and the other part of the # conductor crystal layer 3 covers the region 3b where the electrode layers 15 and 16 are not facing each other. , similarly confined by the semiconductor crystal layers 2 and 4 to the inclined surface 17'! I will pass it on to my side. In this way, a part of the light beam a propagating through the region 3a of the semiconductor crystal layer 3 to the light emitting end face 111111 is prevented from being emitted because the antireflection film 12 is formed on the light emitting end face 11. The light passes through the anti-reflection film 12 and radiates to the outside 81I without being reflected on the end face 11. Furthermore, as described above, the region 3b of the semiconductor crystal R3 is
The other part of the light propagating toward the inclined surface 14 reaches the inclined surface 14 while being absorbed in the region 3b during the propagation process, and is reflected at the inclined surface 14, and the reflected light is absorbed by the semiconductor crystal. Almost no light re-enters the region 3b of the layer 3. From the above, according to the conventional semiconductor light emitting diode shown in FIGS.
The wavelength λ corresponding to the energy bandgap E of the sP system
Light La having a band a centered at 8 is emitted as incoherent light from the light tli()l end face 11 through the anti-reflection film 12 to the outside and is emitted 411. In addition, in this case, the current from the power source continues to flow through the semiconductor stack 10, and therefore, the current from the power source is continuously injected into the region ta3a of the semiconductor crystal layer 3, so light is emitted. The incoherent light emitted from the end surface 11 to the outside is L9 at a relatively high angle of 8 degrees depending on the value of the current flowing in the region 3a of the semiconductor fI! single-layer semiconductor crystal layer 3. Furthermore, since the incoherent light obtained by radiating outward N1 from the end surface of the light emitting end surface is light emitted to the outside from the local region of the end surface of the semiconductor crystal Wj3 on the light emitting end surface 11, the light Incoherent light emitted from the radiation end face 11 to the outside is emitted at a relatively narrow radiation angle depending on the thickness of the semiconductor crystal layer 3. Therefore, the semiconductor shown in FIGS. 8 to 10 According to the light emitting diode, incoherent light is emitted to the outside with relatively high brightness and a relatively narrow radiation angle. [Problems to be Solved by the Invention] However, FIGS. In the case of the conventional semiconductor light emitting diode shown in the figure, !1' in the semiconductor stack 10
The conductor crystal layer 3 is located in the area L where the electrode layers 15 and 16 are facing each other! In the entire region including the region 3b where the electrode layers 15 and 16 do not face each other, there is only one region having an nGaAsP energy band gilt E9a having a composition similar to that of each part. As described above, the incoherent light obtained by radiating the light from one surface to the outside spreads the semiconductor crystal WI3 over its entire area. It has a band centered at wavelength λ8 corresponding to the energy bandgap Eg8 of the InGaAsP system composed of, but its bandwidth Wλ is relatively narrow. For example, a region 3a in which the electrode layers 15 and 16 of the semiconductor crystal layer 3 are facing each other has a energy band 1 such that the center wavelength λ of the light L generated in the region 3a is 1°50 μrn. ! Ir with whelk Eoa
When it has a composition of 1GaASP system, the bandwidth W/la is only about 500A when viewed from the half-width of the 11 degree characteristic with respect to the wavelength of incoherent light obtained by radiating to the outside. For this reason, in the case of the conventional semiconductor light emitting diode shown in FIGS. 8 to 10, the incoherent light emitted to the outside by U1!7 has a degree of incoherence that is proportional to its bandwidth Wλ. However, the disadvantage is that only a relatively low value e can be obtained. Therefore, the present invention aims to propose a novel semiconductor light emitting diode that does not have the above-mentioned vacancies. [Means for Solving the Problems 1] A semiconductor light emitting diode according to the present invention is shown in FIGS. 8 to 10.
As in the case of the conventional semiconductor light emitting diode described above in the figure, (a) a semiconductor crystal substrate having a first conductivity type; and ■ a first semiconductor crystal substrate formed on the semiconductor crystal substrate and having a first conductivity type. (2) a second semiconductor crystal layer formed on and in contact with the first semiconductor crystal layer and having a narrower energy bandgap and a higher refractive index than the first semiconductor crystal layer; , (2) is formed on and in contact with the second semiconductor crystal layer, has a wider energy band gap and lower refractive index than the second semiconductor crystal layer, and has a conductivity type opposite to that of the first semiconductor crystal layer. a third semiconductor crystal layer having a second conductivity type; The second electrode layers are arranged to face each other, and (c) one end face in the longitudinal direction of the semiconductor laminate is charged and discharged c!
It has a configuration with four end faces. However, the half-power light emitting diode according to the present invention
In the semiconductor light emitting diode having such a configuration, (d) the second semiconductor crystal layer has the semiconductor v4 in the region where the first and second electrode layers face each other;
The above light is due to the layered body! The above semiconductor 81ilr4 from the 8th end side
(e) the second semiconductor crystal layer has a plurality of n first, second, . The above first and second...
. . . The n-th region has successively smaller first, second, . . . n-th energy band projections, respectively. Note that in this case, the above-mentioned first electrode layer is the first, second, . . . nth electrode layer of the above-mentioned second semiconductor crystal layer.
The first regions are opposite to each other and are separated from each other.
, second . . . nth electrode body. [Operation/Effect] According to the semiconductor light emitting diode according to the present invention, FIGS.
As in the case of the conventional semiconductor light emitting diode described above in FIG. 10, if a required power source is connected between the first and second electrode layers and current from the power source is caused to flow through the semiconductor VI layer body,
The first and second semiconductor crystal layers of the conductive laminate
The first, second, . . . in the region where the electrode layers of
......In the n-th area 811, those first
, second...... Light having bands each having a wavelength corresponding to the energy band gap of the n-th region is generated. Then, the light generated in the first, second, etc. area portions, respectively, is the first, second, and so on.
...The nth regions are arranged in that order from the light emitting end surface side, and then the first, smaller, and
Since the second semiconductor crystal layer has an n-th energy band gap, the region where the first and second electrode layers of the second semiconductor crystal layer are facing each other can be almost Without being absorbed, the light is confined by the first and second semiconductor crystal layers and propagates toward the light emitting end surface. Therefore, in the case of the semiconductor light emitting diode according to the present invention, the above-mentioned first, second, .
Based on the light generated, incoherent light is emitted to the outside from the charging IJJ end face (!1 In addition, in this case, the current from the bell continues to flow through the conductive laminate, as in the case of the conventional semiconductor light emitting diode described above in FIGS. Since the current is continuously injected into the region where the first and second electrode layers of the second semiconductor crystal layer of the semiconductor stack are facing each other, the current is emitted to the outside from the charging/discharging OJ end face. As in the case of the conventional semiconductor light emitting diode described above with reference to FIGS. Depending on the current flowing in the area where the light is being emitted, the luminance is 4!1 with relatively high brightness.In addition, the incoherent light obtained by radiating outward from the light emitting end face is as described above in Figures 8 to 10. As in the case of conventional semiconductor light emitting diodes, the light is emitted to the outside from a local region called the end face of the second semiconductor crystal layer on the light emitting end face, so the light is emitted from the light emitting end face to the outside. As in the case of the conventional semiconductor light emitting diode described above in FIGS. 8 to 10, the incoherent light emitted by Therefore, also in the case of the semiconductor light emitting diode according to the invention,
As in the case of the conventional semiconductor light emitting diode described in FIGS. 8 to 10, incoherent light is emitted at relatively high brightness and at a relatively narrow radiation angle. However, in the case of the semiconductor light-emitting diode according to the present invention, the regions in which the first and second electrode layers of the second semiconductor crystal layer face each other become smaller in sequence.
. . . has a first, a second, .
Then, J3 is in the first, second,..., n-th area part, (these first, second......
- Each generates light having a band centered on a wavelength corresponding to the n-th energy bandgap, and then radiates the light as incoherent light to the outside from the charging/discharging OA end face. For this reason, the respective first, second, nth energy band gaps of the first, second, nth region portions are as follows: Bands of light generated in the first and second regions, bands of light generated in the second and third regions, respectively, m(nl) and r). Between the first and second energy band gaps, between the second and third energy band gaps, etc., within the range where the bands of light generated in the γ1 region partially overlap with n. ...If the values are selected in advance so as to obtain a large difference between the energy band gaps of the (n-1> and However, Figure 8~
It is possible to obtain one band with a bandwidth that is +8 steps wider than that of the conventional semiconductor light emitting diode described above with reference to FIG. Therefore, according to the semiconductor light emitting diode according to the present invention,
The incoherent light 4r7 emitted from the light emitting end face to the outside changes its degree of incoherence, and the conventional half-barrel optical die described above in FIGS. 8 to 10, 4-1:
Vl is set at a much higher llf than in the case of . (Implementation) Next, a first embodiment of the semiconductor light emitting diode according to the present invention will be described with reference to FIGS. 1 to 3. The same reference numerals are given to the parts corresponding to those in Fig. 10, and detailed explanations are omitted.The 4F conductor light emitting diode Li according to the present invention shown in Figs. Upper iL in Figure 10
The structure is similar to that of conventional semiconductor light emitting diodes. In other words, each part of the crystalline crystal layer 3 of the semiconductor laminate 10 is free in all areas including the area 3a where the electrode layers 415 and 16 are facing each other and the area 3b where the electrode layers 15 and 16 are not facing each other. - Instead of the case of FIGS. 8 to 10, which have a structure having only one region having an energy band gap E, a of an InGaAsP system having a composition like -, the electrode layers 15 and 16 face each other. J7 is located in the region 3a where the semiconductor stack (light emitting end face 1 of A10
A plurality of n first, second, etc. n-th regions rJIM 1M2, which are taken sequentially from No. 1 to the good direction of the semiconductor stack 10. - Contains Mo. Then, these first, second, . . . nth area portions M, , M, 2, .
Even if it is made of InGaAsP system as in the case of the conventional semiconductor light emitting diode described above in FIG.
......M, the energy band gap of the first, second......n-th energy band gap EE......E, n, respectively. Then, those g1ゝQ2 1st, 2nd......nth energy band gap EE......E,. have successively smaller values of 1' g2 in their order, so E (11> E g2>...
・・・・・・〉Eg. It has the following relationship: However, in this case, the first, second......nth
The first and second regions of M, M2...M,
......nth 1 energy band gap EE
...11g2 ...E. 1st, 2nd...
In the n-th area portions M1, M2...Mn, as will be described later, the first, second......n-th 1-energy band gaps EE・・・・・・・・・・
・E. Wavelengths g1 and g2 λ1, λ2, etc., respectively. (In this case, there is a relationship of λ, kuλ2〈......ku λ.), L2...
·death. The bands of light L1 and L2 are generated in the first and second regions M1 and M, respectively, and the light generated in the second and third regions M2 and M3, respectively.
Band No. 3: (n-1)th and nth region portions M(.-1) and M. The light L(. -1) and , respectively, generated at The values are selected so that the bands of 1 and 2 are effectively partially (E and q) respectively. Also, the region 3b of the semiconductor crystal layer 3 where the electrode layers 15 and 16 are not facing each other is Even if it is made of the rnGaAsP system like the region 3a where the electrode layers 15 and 16 face each other, the n-th region is brightest than the charge/discharge end surface 11 in the region IJ3a where the electrode layers 15 and 16 face each other. It has an energy bandgap Egb that is equal to or smaller than the nth energy bandgap [g. Jn having the same composition as the n-th region M in 3a() and l1i3
A case is shown in which the 1-energy bandgap Eg of the region M3b also extends to the region 3a in the n-th region M. is equal to the energy bandgap E0°. The above is the configuration of the first embodiment of the semiconductor light emitting diode according to the present invention. According to the semiconductor light emitting diode according to the present invention having such a configuration, except for the above-mentioned matters, the semiconductor light emitting diode shown in FIGS.
Figure 4 is similar to the conventional semiconductor light emitting diode described above.
1 to 1, the details are omitted, but as in the case of the conventional semiconductor light emitting diode described above in FIGS. 1) and the current from the power source flows through the semiconductor stack 10, the conventional ? 551, the second .
. . . nth region M1. M2・・・・・・・・・M
ok: J7, those first, 'XS2...
... 1st) area part M, M2...Mo
The energy band gap E [......
E (In this gll g2 gn case, L a 1 > E G 2 >...
・>Eg. wavelength λ, λ ・
・・・・・・・・・λ. (In this case, λ × λ2 ×...
・・・・・・〈λ. Lights L1 and L2 each have a band centered on
......L, respectively, occur. Then, the light 1, I-2, etc. generated in the first, second,..., nth regions r, IIM1, M2,..., 1yln, respectively.・・・・・・Ln
are the first, second, . . . nth area portion M1,
M2...Mo is arranged in that order from the light emitting end face 11ft1q, and the arrangement of C and Mo is
11th sequentially smaller 1st, 2nd...r
)'s energy bandgi!・Tub EE・・・・・・・・・
..."!71' (J2, .", semi-crystalline layer 3', Ii pole layer 15
) and 16 are facing each other, the area j or 3
a k: 13 and 1 is not easily absorbed.)
4- The light is trapped by the conductor crystal layers 2 and 4 and propagates toward the light emitting end face 11 side. Therefore, in the case of the conductor light emitting diode according to the present invention shown in FIGS. 1 to 3, the above-mentioned light 1-1, L2...
. . .Lol, :u As in the case of the conventional semiconductor light emitting diode described above in FIGS. And then Wl. In addition, in this case, the current from the power supply continues to flow through the semi-η body vi body 1o, as in the case of the conventional semiconductor light emitting diode described above in FIGS. 8 to 10. Since the current is continuously injected into the region 3a where the electrode layers 15 and 16 of the semiconductor crystal layer 3 of the semiconductor (pathological body 10) are facing each other, no current is emitted to the outside from the light emitting end surface 11.
(As in the case of the conventional semiconductor light emitting diode described above in FIGS. 8 to 10, the incoherent light produced by In addition, the incoherent light obtained by radiating outward from the light emitting end face 11 is different from that of the conventional semiconductor described above in FIGS. 8 to 10. As in the case of a light emitting diode, the light is emitted to the outside from a local area of the end face of the half-barrel layer 3 on the light emitting end face 11; The incoherent light emitted by 1g of light has a relatively narrow emission QJ angle depending on the thickness of the semiconductor crystal layer, as in the case of the conventional conductive light emitting diode described above in FIGS. 8 to 10. Therefore, in the case of the semiconductor light emitting diode according to the present invention shown in FIGS. 1 to 3, as well as in the case of the conventional semiconductor light emitting diode described above in FIGS. However, in the case of the semiconductor light-emitting diode according to the invention shown in FIGS. layer 15
The regions 3a where 16 and 16 face each other become smaller in sequence, the first, second..., n-th 1st channel, 11 band gaps Eg1, Eg2, groan...E, . 1st, 2nd... r)th region b2 having respectively
NSM 1 , M 2 ......M, having
And those first, second......nth territory JI! ! Parts M1, M2......J5 in Mo, their first, second......n-th energy band gap EE (11'Q2'... ...Wavelengths λ and λ according to E, respectively
...! 1101 2...λ. Light that moves to the right in a band centered on , l
-2...Lo are generated respectively, and these lights [11, L2...Lo are light tJ! From the end surface of i, h1 is emitted to the outside as incoherent light. For this reason, the first, second..., n-th area portions M1, M2..., Mo have the first, second..., respectively. ......n-th energy band gap E,,,E......E,. , the light generated in the first and second region portions M9υ 1 and M2, respectively, and the band of L2,
The bands of the lights L2 and L3 generated in the second and third regions M and M3, respectively, are the (n-1th
) and the bands of light '(ni) and Ln generated in the n-th region M(nl) and M, respectively, partially overlap with each other, and the first and second energy band gaps E are Gap between `` and E03...
...(n-1)th and mn energy band gap”
g(n-1) and Eg. If the values are selected in advance so that a large difference can be obtained between them, the incoherent light obtained by radiating outward from the light emitting end surface 11 will be the 8th
One 91 having a much wider bandwidth W8 than the conventional semiconductor light emitting diode described above in FIGS.
) region (q). For example, the region 3a where the electrode layers 15 and 16 of the semiconductor crystal layer 3 are facing each other is In this case, only the first and second (mn) regions mmM and M2 (mn) are
Regarding the area 3a in the case of the conventional rod conductor light emitting diode described above in FIGS. 8 to 10, the area M1 is in the first area M1 in A and the generated light L1 has a center wavelength λ1. The center wavelength λ8 and l1jl mentioned above are 1°50 μm
At the wavelength of
It has a composition of InGaAsP system with gl, and
In this case, the second (mn) region M2 (,.) is the light generated in the second (mn) region M2 (mn), and the center wave has a length of 2 (=2). InGaA with an energy bandgap E02 (=Q.) such that vI at a wavelength of 1.55 μm
In the case of having an sP system composition, l) the beam width W8 is 1 in terms of half-width, as shown in the brightness (arbitrary scale) characteristics with respect to the wavelength (μm) of incoherent light in Fig. 4;
The value of ε0 was about 11, which is about twice the value of the conventional semiconductor light emitting diode (5008) described above in FIGS. 8 to 10. Therefore, according to the semiconductor light-emitting diode A2 according to the present invention shown in FIGS. Since the incohesin ratio is proportional to 1 - 1, it is possible to obtain the incohesin in a much smaller amount than in the case of the conventional semiconductor light emitting diode described above in FIGS. 8 to 10. In the case of the semiconductor light emitting diode according to the present invention as shown in FIG. 3, the electrode layers 15 and 16 of the semiconductor crystal layer 3
1' and 1 in the region 3a facing each other, the first region M, (where 1-1.2......n)
As described above, a part of the generated light i having a band centered on the wavelength λi corresponding to the energy band gap E91 of the region M is generated in the (i+1)th to first region portions. M
C charging and discharging IJJ propagates to the Q plane 11 side through (i-1) to M1, but in this case, the (i-1) to first region M(
1 energy band gap Ea(i-1) to M1
)~Eg1 is wider than the energy bandgap Eg1 of the n-th region M, so a part of the light L1 is
-1)~first area M(i-1)~through M1,
The light propagates efficiently toward the light emitting end face 11 side. Also, light L1
The other portion passes through the (i+1)th to nth region portions M1, and then passes through the electrode layer of the semiconductor crystal layer 3, as described above in the case of the semiconductor light emitting diode shown in FIGS. 8 to 10. 15 and 16 try to propagate to the region 3b where they do not face each other, but in this case, the energy band gap Eatr*1) to Ego of the (i+1)th to nth fi region M and 1 of the region 3a. Nergi bandgi t! The energy band gap of the n-th region M is narrower than that of the n-th region M (however, if i=n, the energy band gap E0b of the region 3b is smaller than that of the n-th region Mn in this case). (the energy band gap Ego may be equal to Ego), so the other part of the light li is the (i+1)th region M (i+1) to M
o and territory Jd3b. Therefore, the incoherent light emitted from the light emitting end face 11 to the outside can be efficiently produced without the cost of reflection.
l! / can be done. In the case of the semiconductor light emitting diode according to the present invention shown in FIGS. 1 to 3, the area Jd' 3 r
The light propagating through the first and second regions M1 and M2
Between, the second and third area portions N12 and M3fl! L...
It is conceivable that (n-1) is reflected at the boundary between the (n-1> and n-th area portions M and M.), but the first, second... . . . n-th area M, , M2 . . . 7th, 2nd . . .
......mn's 1 energy bandgi t1 tube EE
・・・・・・・・・Egl゛(12゜.
and M3......th (n-1> and nth
Q) Region part M(.-1) and M. Since there is only a small refractive index difference between the first and second frX
Between areas M1 and M2, second and third areas? JISM
2 and M31. '1......(n-1)th and rth] area portions M(.-1) and M. Reflections at the boundaries between the two do not pose a practical problem.

Embodiment 2 Next, a second embodiment of the semiconductor light emitting diode according to the present invention will be described with reference to FIGS. 5 to 7. In FIGS. 5 to 7, parts corresponding to those in FIGS. 1 to 3 are designated by the same reference numerals, and detailed description thereof will be omitted. The semiconductor light emitting diode according to the invention shown in FIGS. 5 to 7 has the same structure as the semiconductor light emitting diode according to the invention described above in FIGS. Specifically, the electrode layer 15 has the first, second, . . . , regions 3a of the semiconductor crystal layer 3 of the semiconductor stack 1°.
... No. 1 area M1, M2...M
In place of the case of FIGS. 1 to 3, which have a common electrode layer for n, the first, second, . . .
・・・・・・Nth area Ml, M2...Self...
・First and second electrode bodies facing M and separated into H, respectively, n-th electrode body E 1E2...
...Eo is on the right. The above is the configuration of the first embodiment of the semiconductor light emitting diode according to the present invention. According to the semiconductor light emitting diode according to the present invention having such a configuration as shown in FIG. According to the present invention described above in FIGS. 1 to 3, between each of the fff pole body parts E, , E; 2 . . . Eo of the 11i pole layer 15 and the electrode layer 12, In the case of a semiconductor light emitting diode, the first,
2nd......If the n-th power supply is connected, the first, second...・・・・・・
・In the n-th region M1, M2...M, wavelengths λ, λ2...・・・
...Light L each having a band centered on λn
1. L2...Lo occurs, so please check details
I Although the explanation is omitted, similarly to the case of the semiconductor light emitting diode according to the present invention described above in FIGS. 1 to 3, the light L1 to
1o, the incoherent light based on the light emitting end surface 1
1 to the outside with high brightness and a narrow radiation angle, and with a high degree of incoherence. Moreover, according to the semiconductor light emitting diode according to the present invention shown in FIGS. 5 to 7, the electrode F115 is! The first, second......nth region portions M1, M2......M3 of the region 3a of the t'-crossbody crystal layer 3 are respectively opposed and mutual. The first and second parts are separated into...
・Nth Electricity 441 Body E, E2...Town...E, 81'
As mentioned above, the first, second...
. . . n-th electrode bodies E, E2 . . . The first, second .
...By connecting each n-th power supply,
1st, 2nd...... nth area td part M1, M
2...M. In, wavelength λ, λ2... old... λ. Lights L1 and L2 each have a band centered on .
...When Lo is activated, the first, second...
...by adjusting the nth power source, the light 1112
......The luminous efficiency of L is in the area M, M2...
...... Energy band of M - 1'17p [
E......n (1
1" Q2...E, even if the #I return difference is right between the light U1, n 1-2......18, such brightness Therefore, within the width WH of 1.
This can be achieved by having good brightness characteristics for wavelengths, such as having a brightness of 1α for wavelengths similar to 1B. In addition, in the above, 1.1, so-called embedded type
Although the embodiment in which the present invention is applied to a 4R photodiode is described in section b, the main point is that the semiconductor crystal L described above (corresponding to plate 1 (a) A semiconductor crystal substrate having a first conductivity type, and (1) corresponding to the semiconductor crystal layer 2 described above in FIGS. (1) The first 3R crystal layer is formed in contact with it, and has a narrower energy bandgap and higher refraction>44 than the first semiconductor crystal layer. a second semiconductor crystal layer corresponding to the semiconductor crystal layer ζ3 described above in FIGS. 7 to 3; The semiconductor crystal layer described above in FIGS. 1 to 3 has a wider energy bandgap and lower refractive index than the semiconductor crystal layer of the present invention, and has a second conductivity type opposite to the first conductivity type. (0) on opposing first and second main surfaces of the semiconductor stack; The first 'Et and second 'ih' pole layers corresponding to the electrode layers 15 and 16 described above in FIGS. 1 to 3 are arranged to face each other, and (c) the semiconductor vJPFI It is clear that Kisukero can also be applied to a semiconductor light emitting diode in which one end face in the longitudinal direction of the body is a light-emitting diode. In terms of a semiconductor light emitting diode, the light emitted in the region where the first and second electrode layers of the second semiconductor crystal layer extending linearly in a stripe shape of the semiconductor stack are facing each other.・A second semiconductor whose portion is reflected in a region where the first and second electrode layers of the second semiconductor crystal layer do not face each other, and which extends in a straight stripe shape of one semiconductor stack. To avoid re-injection into the region where the first and second electrode layers of the crystal layer are facing each other, the semiconductor stack is In order to sufficiently absorb the C light, the regions where the electrode layers do not face each other are formed with a relatively long width of 1J to the right. The present invention is applied to a semiconductor light-emitting diode in which a laminate is provided with an inclined surface on the end surface side opposite to the light 11i()I end surface side to prevent light from being reflected there. However, for the above-mentioned purpose, the semiconductor 1111 layer body is arranged so that the region where the first and second electrode layers of the second semiconductor crystal layer are not facing each other is the second semiconductor crystal layer. A semiconductor light emitting diode, in which the first and second electrode layers of the semiconductor crystal layer are curved and extended from the opposing regions, the semiconductor Vi layer body is provided with a second electrode layer.
A semiconductor, such as a semiconductor light emitting diode, in which the first and second electrode layers of the conductor crystal layer have a groove from above that has an inner surface extending diagonally across a region that does not face each other. Various single-conductor light-emitting diodes are manufactured so that the laminate can achieve the above-mentioned purpose.
It will also be obvious that the present invention can be applied in many different ways. Furthermore, the above-mentioned conductor light emitting diode according to the present invention may have a configuration in which "n type" is read as "p type" and "rp type" is read as "n type", and in addition, the spirit of the present invention may be changed. Various modifications and changes may be made without departing from the above.

[Brief explanation of drawings]

1, 2 and 3 are line plan views showing a first embodiment of a semiconductor light emitting diode according to the present invention, and its I
FIG. 2 is a cross-sectional view along the f-I line and a cross-sectional view along the line m. FIG. 4 shows the luminance characteristics with respect to the wavelength of the light emitted from the light emitting end surface (!1) to the outside for explaining the semiconductor light emitting diode according to the present invention shown in FIGS. 1 to 3.
This is diagram J. 5, 6 and 7 are line plan views showing a second embodiment of the semiconductor light emitting diode according to the present invention, and its V
They are a cross-sectional view on the l-Vl line and a cross-sectional view on the Vlv1 line. FIGS. 8, 9, and 10 show a conventional semiconductor light emitting diode, including a 1-line plan view, a sectional view along the 1X line, and a sectional view along the σX-XIfA. 11・・・・・・・・・・・・・・・Light IIl emission end face End face・・・・・・・・・・・・・・・・・・Reverse) J
Prevention film 14...... Slanted surfaces 15, 16... Lightning 8i layers M1 to Mn.
. . . Area portion of region 3a of semiconductor crystal layer 3 [7 to E, .

Claims (1)

[Claims] 1. A semiconductor crystal substrate having a first conductivity type, and a first semiconductor crystal substrate formed on the semiconductor crystal substrate and having the first conductivity type.
a second semiconductor crystal layer formed on and in contact with the first semiconductor crystal layer and having a narrower energy bandgap and a higher refractive index than the first semiconductor crystal layer; A second semiconductor crystal layer is formed on and in contact with the second semiconductor crystal layer, has a wider energy band gap and a lower refractive index than the second semiconductor crystal layer, and has a conductivity type opposite to that of the first semiconductor crystal layer. a third semiconductor crystal layer having a conductivity type; first and second electrode layers are provided on first and second main surfaces of the semiconductor stack that are opposite to each other; In the semiconductor light emitting diode, in which one end face in the longitudinal direction of the semiconductor laminate is arranged as a light emitting end face, the second semiconductor crystal layer is arranged such that the first and second electrode layers face each other. A plurality of n first, second...
- having an n-th region portion, the first and second regions of the second semiconductor crystal layer.
...The n-th region is sequentially smaller than the first,
A semiconductor light emitting diode characterized in that it has a second energy band gap. 2. The semiconductor light emitting diode according to claim 1, wherein the first electrode layer is the first electrode layer of the second semiconductor crystal layer.
Second......The first and second...
A semiconductor light emitting diode characterized by having an n-th electrode body.