JPH03278460A - Semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To remarkably reduce size of a device by selectively obtaining incoherent light and laser light to the outside from the same light radiating surface for incoherent light and laser light. CONSTITUTION:Light traveling toward an end surface 11b of a stacked material 10 is trapped within semiconductor crystal layers 2, 4 and 5 for propagation toward the end surface 11b of the stacked material 10, the almost all light is absorbed within a semiconductor crystal layer 3B for laser light and does not reach the end surface 11b. However, light traveling toward an end surface 11a of the stacked material 10 forming a light radiating surface 12 for incoherent light and laser light is little absorbed by a semiconductor crystal layer 3A for incoherent light, trapped in the crystal layers 2, 4 and 5 and is then propagated. Thereafter this light reaches the light radiating surface 12 for incoherent light and laser light. Thereby, the light generated by a crystal part M1 is selectively radiated, as the incoherent light, to the outside from the light radiating surface 12 for incoherent light and laser light.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor light emitting device that can selectively obtain incoherent light and laser light. [Conventional technology]

Conventionally, a semiconductor light emitting device for incoherent light that can obtain incoherent light and a semiconductor light emitting device for laser light that can obtain laser light are separately prepared, and then these semiconductor light emitting devices for incoherent light and A semiconductor light emitting device that selectively obtains incoherent light and laser light by selecting a semiconductor light emitting element for laser light is used as a light source device for measurement.

[Problem to be solved by the invention]

However, in the case of the conventional semiconductor light emitting device described above,
It is necessary to separately prepare two semiconductor light emitting devices: a semiconductor light emitting device for incoherent light that can obtain incoherent light, and a semiconductor light emitting device for laser light that can obtain laser light. This has the disadvantage that the light emitting device becomes large. In addition, in the case of the conventional semiconductor light emitting device described above, when incohesin 1 to supply light and laser light to a common optical system, a C Unless two separate transmission paths are prepared: an incoherent light transmission path extending between the laser light semiconductor light emitting device and the optical system, incoherent light and laser light transmission paths must be prepared separately. Therefore, when incoherent light and laser light are supplied to a common optical system, the supply means is complicated and large. It had the disadvantage of becoming

[Object of the present invention]

Therefore, the present invention aims to propose a novel semiconductor light emitting device that does not have the above-mentioned drawbacks. [:Means for Solving Problem 1] The semiconductor light emitting device according to the first invention to the third invention of the present application is characterized in that:
A first semiconductor crystal layer in which no impurity that imparts a second conductivity opposite to that of the conductivity type is intentionally introduced, or even if it is introduced, it is introduced only at a sufficiently low concentration; first and second semiconductor crystal layers facing each other in one semiconductor crystal layer;
A second semiconductor crystal layer is formed on the main surface of and in contact with the first semiconductor crystal layer, and has a wider energy band gap and a lower refractive index than the first semiconductor crystal layer, and has a first conductivity type and a second conductivity type, respectively. and a third semiconductor crystal layer, and has first and second end faces made of opposing Fabry-Perot reflective surfaces,
and (1) the first and second opposing surfaces of the semiconductor laminate.
(1) first and second electrode layers are disposed facing each other on the main surface of the semiconductor stack; and a semiconductor crystal layer for laser light on the second end face side of the semiconductor laminate; n pieces arranged sequentially from the side opposite to the above semiconductor crystal layer for laser light (however,
(n is an integer greater than or equal to 1)), the first and second semiconductor crystal layers of the above-mentioned parakeet and one-shot light semiconductor crystal layers are ......The n-th semiconductor crystal layer portion is successively smaller in order of the first, second, etc.
. . . each has an n-th energy band gap, and (1) the semiconductor crystal layer for laser light is smaller than the n-th semiconductor crystal layer portion of the semiconductor crystal layer for incoherent light. (1) the first electrode layer has an incoherent light electrode layer facing the incoherent light semiconductor crystal layer, and an incoherent light semiconductor crystal layer facing the laser light semiconductor crystal layer; (1) The seventh end surface of the single conductor (a) is used as a light emitting surface for incoherent light and laser light. In this case, the incoherent light electrode layer of the first electrode layer is replaced with the first incoherent light semiconductor crystal layer of the incoherent light semiconductor crystal layer.
, the second . . . n th semiconductor crystal layer portion may have first and second . . Further, the first of the semiconductor crystal layer for incoherent light,
Second......The first of the nth semiconductor crystal layer section,
2nd... In the n-th energy band gap, a band of light emitted by the first and second semiconductor crystal layer parts, and a band of light emitted by the second and third semiconductor crystal layer parts, respectively. The light bands emitted by the (n-1)th and nth semiconductor crystal layer portions may each have values obtained by partially overlapping with each other. . Further, the semiconductor light emitting device according to the fourth invention to the sixth invention of the present application is characterized in that: (i) an impurity imparting a first conductivity type or a second conductivity type opposite to the first 1lli type; A plurality of n first, second, etc. n-th incoherent impurities in which none of the impurities are intentionally introduced, or if they are, they are introduced only at sufficiently low concentrations. Neither an impurity that imparts a first conductivity type nor an impurity that imparts a second conductivity type opposite to the first conductivity type is intentionally introduced into the optical semiconductor crystal layer, or even if it is introduced. (ii) the first semiconductor crystal layer for incoherent light is formed on the first semiconductor layer in contact with the first semiconductor layer; (iii) the second, third...... n-th semiconductor crystal layer for incoherent light is the first, second......
On the (n-1)th incoherent optical semiconductor crystal layer, the first
, second...... The second, third...... are left as the (n-1)th semiconductor crystal layer portions, respectively.
. . . is formed by stacking the n-th semiconductor layers through each other, and (1v) the semiconductor crystal layer for laser light has a part thereof on the n-th semiconductor crystal layer for incoherent light. The n-th (
(V)
The (n+2)th semiconductor crystal layer section and the semiconductor crystal layer for laser light
It has a structure in which semiconductor layers are formed in a continuous manner,
(vi) and are formed of opposing Fabry-Perot reflecting surfaces, and form an end face on one side of the first semiconductor crystal of the first semiconductor crystal layer for incoherent light and an end face on the opposite side, respectively. a semiconductor stacked body having first and second end faces facing each other; ■The above first,
Second......The n-th incoherent optical semiconductor crystal layer is sequentially smaller than the first, second...
. . . each has an n-th energy band gap, and further, (1) the semiconductor crystal layer for laser light has a smaller energy band gap than the n-th semiconductor crystal layer for incoherent light; , (i) the first semiconductor layer has a wider energy bandgap and lower refractive index than the first incoherent optical semiconductor crystal layer, and has a first S-electrode type; , (ii) the second, third, etc. n-th semiconductor layer is the first and second semiconductor layer, the second and third semiconductor layer, etc.
What is an impurity or a first conductivity type that has a wider energy band gap and a lower refractive index than the (n-1)th and nth incoherent optical semiconductor crystal layers, respectively, and provides a first conductivity type? (iii) the (n+1)th semiconductor layer is not intentionally introduced with any impurity giving the opposite second conductivity type, or has the first conductivity type, and (iii) the (n+1)th semiconductor layer The impurity has a wider energy band gap and lower refractive index than the semiconductor crystal layer for use and the semiconductor crystal layer for laser light, and also provides a first conductivity type or a second conductivity type opposite to the first conductivity type. The first thing to check is whether any of the impurities given are intentionally introduced.
(iv) the (n+2)th semiconductor layer has a wider energy band gap than the first to nth semiconductor crystal layers for incoherent light and the semiconductor crystal layer for laser light; a semiconductor crystal layer for incoherent light, which has a low refractive index and a second conductivity type; an electrode layer, and an electrode layer for laser light, which faces the semiconductor crystal layer for laser light; It is a light emitting surface. In this case, the incoherent light electrode layer of the first electrode layer is replaced with the first, second, .・・・・・・
. . . may have first, second, . . . nth electrode layer portions facing the nth semiconductor crystal layer portion, respectively. In addition, the first, second, etc. of the above-mentioned first, second, etc., n-th incoherent light semiconductor crystal layer.
. . . in the n-th energy band gap, the first and second
The band of light emitted by each of the second and third semiconductor crystal layer parts, the band of light emitted by each of the second and third semiconductor crystal layer parts.
. . . Determine the values obtained when the light bands emitted from the (n-1)th and nth semiconductor crystal layer portions partially overlap with each other.

[Action/effect]

According to the semiconductor light emitting device according to the first invention to the third invention of the present application, a necessary power supply for incoherent light is provided between the electrode layer for incoherent light of the first electrode layer and the second electrode layer. When the incoherent light source is connected to the incoherent light power source, a current flows from the incoherent light power supply to the first, second, . . . of the incoherent light semiconductor crystal layer of the first semiconductor crystal layer.
......Since it flows through the n-th semiconductor crystal layer, the first of the incoherent light semiconductor crystal layers
, in the second......nth semiconductor crystal layer section, according to the energy band gap of the first, second......nth semiconductor crystal layer section. Light having bands centered on each wavelength is generated. The light generated in the first, second, etc. nth semiconductor crystal layer portions is transmitted to the first, second, and so on.
......The n-th semiconductor crystal layer portions are sequentially arranged from the first end surface side of the semiconductor stack forming the light emitting surfaces for incoherent light and laser light in that order, and the arrangement The first and second smaller ones in order...
The semiconductor crystal layer for laser light has an n-th energy band gap, and the semiconductor crystal layer for laser light is disposed on the second end face side of the semiconductor stack, and is larger than the n-th semiconductor crystal layer portion of the semiconductor crystal layer for incoherent light. Since it has a small energy band gap, the light component directed toward the second end face side of the semiconductor stack is confined by the second and third semiconductor crystal layers and is transmitted to the second end face of the semiconductor stack. 2, but the second to nth semiconductor crystal layers of the first semiconductor crystal layer
Semiconductor crystal layer portion and semiconductor crystal layer for laser light, third to
n-th semiconductor crystal layer portion and semiconductor crystal layer for laser light...
. . . Almost all of them are absorbed within the semiconductor crystal layer for laser light, and almost none of them reach the second end facet. However, for the light component directed toward the first end surface side of the semiconductor stack forming the light emitting surface for incoherent light and laser light, the semiconductor crystal layer for incoherent light is
The light is hardly absorbed in the semiconductor crystal layer for incoherent light, and propagates while being confined by the second and third semiconductor crystal layers, reaching the light emitting surface for incoherent light and laser light. For this reason, the first layer of the semiconductor crystal layer for incoherent light,
2nd...The light generated in the n-th semiconductor crystal layer section is obtained by being emitted as incoherent light to the outside from the light emitting surfaces for incoherent light and laser light. . In addition, in this case, if the current from the incoherent optical power source is continuously passed through the semiconductor stack,
Incoherent light emitted to the outside from the light emitting surface for incoherent light and laser light can be obtained with relatively high brightness depending on the current flowing through the semiconductor crystal layer for incoherent light of the first semiconductor crystal layer. . Furthermore, the incoherent light obtained by being radiated to the outside from the light emitting surface for incoherent light and laser light is transmitted to the incohesin 1 to the semiconductor crystal layer for light on the light emitting surface for incoherent light and laser light. Since the light is emitted to the outside from a local region called the end face of the semiconductor crystal layer section 1, the incoherent light obtained by being emitted to the outside from the light emitting surface for incoherent light and laser light is incoherent. The radiation is emitted at a relatively narrow radiation angle depending on the thickness of the first semiconductor crystal layer portion of the optical semiconductor crystal layer. Therefore, according to the semiconductor light emitting devices according to the first invention to the third invention of the present application, incoherent light is transmitted from the light emitting surface for incoherent light and laser light to the outside at a relatively high intensity. can be obtained with a relatively narrow radiation angle. In this case, the incoherent light electrode layer is the first, second, etc. of the incoherent light semiconductor crystal layer.
. . . First and second electrode layer portions facing the n-th semiconductor crystal layer portion, respectively. . . . Between each of the n-th electrode layer parts and the second electrode layer, the first,
2nd...... Since the n-th incoherent light power source can be connected, the 1st, 2nd...
...The intensity of the light emitted from each of the n-th semiconductor crystal layer parts can be adjusted separately, so that the intensity of the incoherent light emitted from the light tl111 plane for incoherent light and laser light can be adjusted with respect to the wavelength. Distribution can be adjusted. Further, each of the first, second,..., nth semiconductor crystal layer portions of the first, second,..., nth semiconductor crystal layer portions
The energy band gap of is defined as the band of light generated in the first and second semiconductor crystal layer sections, the band of light generated in the second and third semiconductor crystal layer sections, respectively,...
Between the first and second energy band gaps, within the range where the bands of light generated in the (n-1)th and nth semiconductor crystal layer portions partially overlap with each other, Between the second and third energy band gaps...
...If the values are selected in advance so that a large difference can be obtained between the (n-1)th and nth energy band gaps, the radiation from the light emitting surface for incoherent light and laser light to the outside will be reduced. The resulting incoherent light can be obtained as having one band with a wide bandwidth. Further, according to the semiconductor light emitting device according to the first invention to the third invention of the present application, a necessary laser light power source is provided between the laser light electrode layer of the first electrode layer and the second electrode layer. When connected, current flows from the laser light power supply to the semiconductor stack through the laser light semiconductor crystal layer of the first semiconductor crystal layer. Light having a band centered on a wavelength corresponding to the energy bandgap is generated. The light generated in the semiconductor crystal layer for laser light is
The first and second semiconductor crystal layers for incoherent light disposed on the first end surface side of the semiconductor stacked body...
・Since the n-th semiconductor crystal local region has a wider energy band gap than the semiconductor crystal layer for laser light disposed on the second end surface side of the semiconductor stack, the light emitting surface for incoherent light and laser light can be For the light component directed toward the first end surface side of the semiconductor stack that is being formed, the semiconductor crystal layer for laser light and the semiconductor crystal layer for incoherent light are separated. (, it is confined by the second and third semiconductor crystal layers and propagates to the first end face side of the semiconductor stack, and is then reflected at the first end face to form a laser beam semiconductor. For the light component directed toward the crystal layer side and toward the second end surface side of the semiconductor stack, the semiconductor crystal layer for laser light is hardly absorbed therein, and the second
The light is confined by the third semiconductor crystal layer and propagates toward the second end surface of the semiconductor stack, and then is reflected from the second end surface and travels toward the semiconductor crystal layer for incoherent light. Therefore, if current from the laser light power supply continues to flow through the semiconductor stack, laser oscillation will occur, and the resulting laser light will be emitted from the incoherent light and laser light emitting surfaces to the outside. is radiated to. Therefore, according to the semiconductor light-emitting devices according to the first to third and eighth inventions of the present application, laser light can be obtained to the outside from the light emitting surfaces for incoherent light and laser light. From the above, according to the semiconductor light emitting devices according to the first invention to the third invention of the present application, incoherent light and laser light can be transmitted in the same device for incoherent light and laser light with one element configuration. It can be emitted from the light emitting surface to the outside. Therefore, the semiconductor light emitting device can be made much smaller than the conventional semiconductor light emitting device described above. Furthermore, when incoherent light and laser light are supplied to a common optical system, a common transmission path can be used for the incoherent light and laser light. The means for supplying these to the common optical system can be made much simpler and smaller than in the case of the conventional semiconductor light emitting device described above. 4 according to the fourth invention of the present application to the sixth invention of the present application! According to the conductor light emitting device, the first electric current IN! If a required power supply for incoherent light is connected between the electrode layer for incoherent light and the second electrode layer of the layer, a current flows from the power supply for incoherent light to the semiconductor stacked body, and the first incoherent light a first semiconductor crystal layer portion of a semiconductor crystal layer for coherent light;
The second semiconductor crystal layer portion of the second semiconductor crystal layer for incoherent light, the region under the second semiconductor crystal layer of the first semiconductor crystal layer for incoherent light and the second semiconductor crystal layer, and the third Third layer of semiconductor crystal layer for incoherent light
, the second and first semiconductor crystal layers for incoherent light, and the third and second semiconductor crystal layers under the third semiconductor crystal layer, . . . The n-th semiconductor crystal layer portion of the incoherent light semiconductor crystal layer, and the (n-1)th and (n-2>...
Flowing through the first semiconductor crystal layer for incoherent light and the region under the n-th semiconductor crystal layer of the n-th, (n-1)... second semiconductor crystal layer, In this case, the energy band gaps of the first, second, . ......The n-th semiconductor crystal layer is the first and second, the second and third...
1) and has a wider energy bandgap than a large-sized incoherent optical semiconductor crystal layer, so that substantially the first, second,..., n-th incoherent First and second optical semiconductor crystal layers...
...In the n-th semiconductor crystal layer section, those first and second
. . . Light having bands each having a wavelength corresponding to the energy band gap of the n-th incoherent light semiconductor crystal layer is generated. The light generated in the first semiconductor crystal layer portion of the first semiconductor crystal layer for incoherent light is transmitted to the first, second, . . .
. . . The first and second semiconductor crystal layers of the n-th semiconductor crystal layer for incoherent light are incoherent 1 to light and laser in that order. First and second elements are arranged in sequence from the first end surface side of the semiconductor stack forming the light emitting surface for light, and are arranged sequentially in the order of arrangement.
・・・・・・・・・The semiconductor crystal layer for laser light has an n-th energy band gap, and the semiconductor crystal layer for laser light has an is disposed on the second end surface side of the semiconductor stack, and has a smaller energy band gap than the n-th semiconductor crystal layer portion of the n-th semiconductor crystal layer for incoherent light; ......The (n-1)th incoherent light semiconductor crystal layer is the second, third...
. . . second, third . . . via the n-th semiconductor crystal layer.
... optically coupled to the n-th semiconductor crystal layer for incoherent light, and the n-th semiconductor crystal layer for incoherent light is connected to the semiconductor crystal layer for laser light via the (n+1)th semiconductor crystal layer. Since it is optically coupled to the semiconductor crystal layer, for the light component directed toward the second end surface side of the semiconductor stack, the first incoherent light semiconductor crystal layer is connected to the second and third semiconductor crystal layers. However, most of it is absorbed within the second to n-th semiconductor crystal layers for incoherent light and semiconductor crystal layers for laser light, and the light propagates toward the second end surface of the semiconductor stack. hardly reached. However, for the light component of the light generated in the first semiconductor crystal layer of the first semiconductor crystal layer for incoherent light, which is directed toward the first end surface side of the semiconductor stack, the first semiconductor crystal layer is , where the first
The light is confined and propagated by the (n+2)th semiconductor crystal layer and reaches the light emitting surface for incoherent light and laser light. Also, the second, third, fourth...
・The light generated in the second and third semiconductor crystal layer portions of the n-th incoherent light semiconductor crystal layer is directed toward the second end surface side of the semiconductor stack. About the minute,
For the same reasons as mentioned above, according to the above,
Third to nth semiconductor crystal layers for incoherent light and semiconductor crystal layers for laser light,! ′! 4th to n-th semiconductor crystal for incoherent light and semiconductor crystal layer for laser light...
. . . Almost all of them are absorbed within the laser beam semiconductor crystal layer, and almost none of them reach the second end facet. However, for the light component directed toward the first end surface side, the first incohesin 1 - semiconductor crystal layer for light, the first and second semiconductor crystal layers for incoherent light, the first to third incoherent light Semiconductor crystal layer for...
Through each of the first to (n-1)th semiconductor crystal diagrams for incoherent light, the light propagates while being confined by the first and (n+2)th semiconductor crystal layers without being absorbed. It reaches the light emitting surface for coherent light and laser light. For this reason, the first, second...... nth semiconductor crystal layer for incoherent light is
...The light generated in each n-th semiconductor crystal layer section is
As in the case of the semiconductor light emitting devices according to the first invention to the third invention of the present application, as incoherent light,
It is obtained by emitting light to the outside from a light emitting surface for incoherent light and laser light. Furthermore, in this case, if the current from the incoherent light power source is continuously passed through the semiconductor stack, the incoherent light emitted to the outside from the incoherent light and laser light emitting surfaces is According to the case of the semiconductor light emitting device according to the invention of the present invention to the third invention of the present application, the first, the second......the first and second semiconductor crystal layers for incoherent light of the n-th . . . Relatively high brightness can be obtained depending on the current flowing through the n-th semiconductor crystal layer portion. Further, the incoherent light obtained by being emitted to the outside from the light emitting surface for incoherent light and laser light is Since the light is emitted to the outside from a local area called the end face of the first semiconductor crystal layer of the first semiconductor crystal layer for incoherent light on the light emitting surface for coherent light and laser light, it is incoherent. In the case of the semiconductor light emitting devices according to the first to third inventions of the present application, the incoherent light obtained by radiating outward from the light emitting surface for light and laser light is the first incoherent light. First optical semiconductor crystal layer
The radiation is emitted at a relatively narrow radiation angle depending on the thickness of the semiconductor crystal layer. Therefore, even in the case of a semiconductor light emitting device according to the fourth invention to the sixth invention of the present application, the first invention to the sixth invention of the present application
As in the case of the semiconductor light emitting device according to the third invention of the present application, incoherent light is emitted from the light emitting surface for incoherent light and laser light to the outside at a relatively high intensity.
can be obtained with a relatively narrow radiation angle. In this case, the incoherent light electrode layer is formed into the first, second, etc. according to the semiconductor light emitting devices according to the first to third inventions of the present application. The first, second and second layers of the n-th incoherent light semiconductor crystal layer
. . . If the n-th semiconductor crystal layer portion has first and second electrode layer portions facing each other, the present application 1st invention ~ Claim 3
As in the case of the semiconductor light emitting device according to the second invention, first and second electrode layers are provided between each of the first, second, . . . , nth electrode layer portions and the second electrode layer. 2・・・・・・・・・
...Since the n-th incoherent light power source can be connected, the intensity of the light emitted by the first, second, etc. n-th semiconductor crystal layer sections can be adjusted individually. Therefore, the first invention to the third invention of the present application can be
As in the case of the semiconductor light emitting device according to the second aspect of the invention, the intensity distribution with respect to the wavelength of the incoherent light emitted from the light emitting surface for incoherent light and laser light can be adjusted. Further, the first and second . . . . . . . . . .
The first and second of the n-th incoherent optical semiconductor crystal layer
......The n-th energy band gap is
According to the semiconductor light emitting devices according to the first invention to the third invention of the present application, the bands of light generated in the first and second semiconductor crystal layer portions, the second and third semiconductor crystal layers, respectively. The band of light generated in each area,...
...between the first and second energy band gaps, within the range where the bands of light generated in the (n-1) and n-th semiconductor crystal layer portions partially overlap with each other. and the third energy band gap,...
. . . If values are selected in advance so that a large difference can be obtained between the energy band gaps of <n-1) and the n-th energy band gaps, semiconductor light emitting devices according to the first invention to the third invention of the present application can be achieved. Similarly to the above case, the incoherent light obtained by radiating outward from the light emitting surface for incoherent light and laser light can be obtained as having one band having a wide bandwidth. In addition, in the case of a semiconductor light emitting device according to the fourth invention to the sixth invention of the present application, the first invention of the present application is provided between the laser beam electrode layer of the first electrode layer and the second electrode layer. ~
As in the case of the semiconductor light emitting device according to the sixth invention of the present application, when a required power source for laser light is connected, a current is supplied from the power source for laser light to the semiconductor stack, the semiconductor crystal layer for laser light, and the semiconductor layer. (n+1) semiconductor crystal layer, n-th, (n-th
-1)......Second semiconductor crystal layer and n-th
, (n-1)th......flows through the region under the laser beam semiconductor crystal layer of the first incoherent light semiconductor crystal layer, and in this case, the laser beam semiconductor Since the crystal layer has a smaller energy band gap than the first to n-th semiconductor crystal layers for incoherent light and the second to (n+1>> semiconductor crystal layers), the laser beam In the semiconductor crystal layer for laser light, light having a band centered on a wavelength corresponding to its energy bandgap is generated.The light generated in the semiconductor crystal layer for laser light is
The first, second, etc. n-th semiconductor crystal layer for incoherent light has a wider energy band gap than the semiconductor crystal layer for laser light, and the energy band gap is wider in that order. Further, as described above, the first, second...-1 (n-1) incoherent light semiconductor crystal layers have second, third...・
...Second and third through the n-th semiconductor layer...
... are optically coupled to the n-th semiconductor crystal layer for incoherent light, and the n-th semiconductor crystal layer for incoherent light is connected to the semiconductor crystal layer for laser light via the (n+1)th semiconductor crystal layer. Since they are optically coupled, the laser beam semiconductor crystal layer and the first to n-th incoherent light semiconductor crystal layers are almost always connected to each other for light components directed toward the first end surface side of the semiconductor stack. without being absorbed, the first and the first (
n+2) semiconductor crystal layer, and finally propagates to the first end surface side of the semiconductor stack through the first incoherent light semiconductor crystal layer, and then the first
As described above, the light component is reflected at the end face of the semiconductor layer, passes through the first semiconductor crystal layer for incoherent light, and is directed toward the second end face side of the semiconductor stack. For the same reason as described above, the semiconductor crystal layer for laser light and the first to n-th semiconductor crystal layers for incoherent light are not absorbed and the first and (n+2)
is confined by the semiconductor crystal layer, and finally the first
The first incoherent light propagates through the semiconductor crystal layer for incoherent light to the second end face side of the semiconductor stack, and is then reflected at the second end face to the first end face side. through the semiconductor crystal layer. Therefore, if a current from a laser light power source is continuously applied to the semiconductor stack, laser oscillation occurs as in the semiconductor light emitting devices according to the first to third inventions of the present application. Laser light based thereon is then radiated to the outside from the light emitting surfaces for incoherent light and laser light. Therefore, also in the case of the semiconductor light emitting device according to the fourth invention to the sixth invention of the present application, the laser beam is
As in the case of the semiconductor light emitting devices according to the third invention to the third invention of the present application, the light can be obtained externally from the light emitting surface for incoherent light and laser light. From the above, in the case of the semiconductor light emitting device according to the fourth invention to the sixth invention of the present application, as in the case of the semiconductor light emitting device according to the first invention to the third invention of the present application, With one element configuration, incoherent light and laser light can be externally obtained from the same light emitting surface for incoherent light and laser light. For this reason,
As in the case of the semiconductor light emitting devices according to the first to third inventions of the present application, the semiconductor light emitting device can be significantly miniaturized compared to the conventional semiconductor light emitting device described above. Furthermore, when incoherent light and laser light are supplied to a common optical system, the incoherent light and laser light Since a common transmission path can be used for light, the means for supplying incoherent light and laser light to a common optical system can be provided by the semiconductor light emitting devices according to the first to third inventions of the present application. As in the case of the device, it can be made much simpler and smaller than the conventional semiconductor light emitting device described above.

Embodiment 1 Next, a first embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 1 to 4. The semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4 is
It has the following configuration. That is, for example, a semiconductor crystal substrate 1 having an n-type, a semiconductor crystal layer 2 formed on the semiconductor crystal substrate 1 in contact with it and having the same n-type as the semiconductor crystal substrate 1,
A semiconductor crystal layer 3 in which neither type-giving impurities nor p-type impurities are intentionally introduced, or even if they are introduced, they are only introduced at a sufficiently low concentration;
A semiconductor crystal layer 4 having a p-type opposite to that of the semiconductor crystal layer 2, a semiconductor crystal layer 5 formed on and in contact with the semiconductor crystal layer 4 and having the same p-type as the semiconductor crystal layer 4, and a semiconductor crystal Ii5. A semiconductor crystal [
A semiconductor stack 10 has a semiconductor crystal layer 6 having the same p-type as 15. In this case, as shown in FIG. 3, the semiconductor stack 10 is arranged in the longitudinal direction of the semiconductor stack 10 (in FIG. 2).
(direction parallel to the page, perpendicular to the page in Figure 3)
It has a mesa-like shape rising from the semiconductor crystal layer 2 or the semiconductor crystal substrate 1 (in the figure, rising from the semiconductor crystal layer 2) when viewed in a cross section on a plane perpendicular to the , on both the left and right sides of the mesa, on the semiconductor crystal layer 2 or semiconductor crystal substrate 1 side, the semiconductor crystal layers 2 and 3 and the lower half of the semiconductor crystal 114 or the semiconductor crystal layer 2 .
3 and 4 and the lower half of the semiconductor crystal layer 5 (in the figure, the semiconductor crystal layers 2 and 4 are respectively formed in contact with the lower half of the semiconductor crystal layer 5). ) and has p-type semiconductor crystal layers 6L and 6R made of, for example, InP, respectively, and on these semiconductor crystal layers 6L and 6R, the upper half of the semiconductor crystal layer 4 and the semiconductor crystal layers 5 and 6 or are formed in contact with the upper half of the semiconductor crystal layer 5 and the semiconductor crystal layer 6 (in the figure, they are respectively formed in contact with the upper half of the semiconductor crystal layer 5 and the semiconductor crystal layer 6), and n It has semiconductor crystal layers 7L and 7R, each of which has a type and is made of, for example, rnP. Further, the semiconductor stack 1o has opposing end surfaces 11a and 11 extending perpendicularly to the thickness direction of the semiconductor stack 10.
b, and has its - side end face 1goa as a light emitting surface 12 for incoherent light and laser light, and on the other hand, on the light emitting surface 12 for incoherent light and laser light, An antireflection film 13 is attached. Further, in the semiconductor stacked body 10 described above, the semiconductor crystal substrate 1 has a main surface formed of a (100) plane and is made of, for example, InP. Furthermore, semiconductor crystal layers 2.3.4.5 and 6 are both formed on the main surface of such semiconductor crystal substrate 1 by liquid phase epitaxial growth, vapor phase epitaxial growth, molecular beam epitaxial growth, etc. The semiconductor crystal layer 3 is made of, for example, InGaAsp,
In addition, semiconductor crystals JI2.4 and 5 are semiconductor crystal layer 3
The semiconductor crystal layer 6 has a wider energy band gap and lower refractive index than the semiconductor crystal layer 6, and is made of, for example, InP.
For example, it is made of InGaASP type. In this case, the semiconductor crystal layer 3 constituting the semiconductor stack 1o is the semiconductor crystal for incoherent light on the end face 11a side of the semiconductor stack 10 forming the light emitting surface 12 for incoherent light and laser light. Layer 3A and the semiconductor crystal layer 3 for laser light on the other end face 11b side of the semiconductor stack 10
B, and the semiconductor crystal layer 3A for incoherent light has one semiconductor crystal layer section M1, and the semiconductor crystal layer 3B for laser light is connected to the semiconductor crystal layer section M1, and the semiconductor crystal layer 3A has one semiconductor crystal layer section M1. Energy bandgap E of part M
It has a small energy bandgap E, B compared to i17H1. Further, the semiconductor crystal layer 4 constituting the semiconductor stack 10
The interconnected semiconductor crystals 1i are formed on the incoherent light semiconductor crystal layer 3A and the laser light semiconductor crystal layer 3B, respectively.
4A and 4B, and the semiconductor crystal layer 4A has one semiconductor crystal layer portion W1 formed thereon corresponding to the semiconductor crystal layer portion M1 of the semiconductor crystal 1i3A. Note that the semiconductor crystal layer 4 may in principle consist of one semiconductor crystal layer, and therefore does not need to have the semiconductor crystal layers 4A and 4B, but the semiconductor crystal layers 3A and 3B will be described later. Since it is formed in this manner, it is said to have semiconductor crystals 1ii4A and 4B. Furthermore, the semiconductor crystal layers 6 constituting the semiconductor stack 10 are formed on the incoherent light semiconductor crystal layer 4A and the laser light semiconductor crystal layer 4B, respectively, and are separated from each other. The semiconductor crystal M6A has one semiconductor layer portion Q1 formed thereon corresponding to the semiconductor crystal layer portion M1 of the semiconductor crystal @3A. Further, a semiconductor crystal layer 7L is provided on one main surface 10a of the semiconductor stacked body 10 described above, that is, on the top surface of the semiconductor crystal layer 6.
An electrode layer 15 extending also over 7R is arranged in an ohmic manner. In this case, the electrode layer 15 includes an incoherent light electrode 1115A facing the incoherent light semiconductor crystal 1i3A, and a laser light electrode layer 15B facing the laser light semiconductor crystal layer 3B.
and an electrode layer 15A for incoherent light.
has one electrode layer portion E1 corresponding to one semiconductor crystal layer portion M1 of the incoherent light semiconductor crystal layer 3A. Moreover, the above-mentioned main surface 10a of the above-mentioned semiconductor stack 10
Another electrode 116 is provided on the other main surface 10b facing the main surface 10b of the semiconductor laminate 10, that is, on the surface of the semiconductor crystal substrate 1 opposite to the semiconductor crystal I2 side.
15 and is arranged in an ohmic manner. Note that the above-mentioned configuration can be manufactured as follows, although illustration and detailed explanation will be omitted. That is, on the semiconductor crystal substrate 1, there are formed a semiconductor crystal layer that will become the semiconductor crystal layer 2, a semiconductor crystal layer that will become the semiconductor crystal layer for incoherent light 3A, and a semiconductor crystal layer that will become the semiconductor crystal layer section for incoherent light 4A. are formed by laminating them in that order, and then the semiconductor crystal layer that will become the conductor crystal layer 3A for incoherent light and the semiconductor crystal layer that will become the semiconductor crystal layer section 4A for incoherent light are partially removed by etching. Then, on the semiconductor crystal layer that becomes the semiconductor crystal layer 2 exposed by the removal, a semiconductor crystal layer that becomes the semiconductor crystal layer for laser light 3B and a semiconductor crystal layer that becomes the semiconductor crystal layer section 4B for laser light are added. are laminated in that order, and then a semiconductor crystal layer that will become the semiconductor crystal layer 5 and a semiconductor crystal layer that will become the semiconductor crystal layer 6 are formed on the semiconductor crystal layer that will become the semiconductor crystal layer parts 4A and 4B. These are formed in that order, and then mesa etching is performed on the semiconductor stack made of the semiconductor crystal layers formed so far, and then,
A semiconductor crystal layer 116L, 6R17 [and 7R is formed, and then the semiconductor crystal layer 6A is etched to become the semiconductor crystal layer 6A.
and 6B, and then electrode layers 15A, 15B and 1
6 and then separating the semiconductor stack. The above is the configuration of the first embodiment of the semiconductor light emitting device according to the present invention. According to the semiconductor light emitting device according to the present invention having such a configuration, the incoherent light electrode layer 15 of the electrode layer 15
If a required power source for incoherent light is connected between the electrode layer portion E1 of A and the electrode layer 16, a current is supplied from the power source for incoherent light to the semiconductor stack 10 to reduce the incoherence of the semiconductor crystal layer 3. Since it flows through the semiconductor crystal layer portion M1 of the optical semiconductor crystal layer 3A, in the semiconductor crystal layer portion M1 of the incoherent optical semiconductor crystal layer 3A, the energy band gap Eg of the semiconductor crystal layer portion M1 is Light having a band centered around the wavelength is generated. The light generated in the semiconductor crystal layer portion M1 is transmitted to the end face 1 of the semiconductor stack 10 by the laser beam semiconductor crystal WJ3B.
1b side and has a smaller energy band gap than the semiconductor crystal layer portion M1 of the incoherent optical semiconductor crystal layer 3A, the end face 11b of the semiconductor stack 10
Regarding the light component directed to the side, it is assumed that the semiconductor crystal layer 3 is confined by the semiconductor crystal layers 2.4 and 5 and does not propagate toward the end surface 11b side of the semiconductor stack 10.
It is almost absorbed within the semiconductor crystal layer 3B for laser light at t3, and although it hardly reaches the end face 11b, it goes toward the end face 11a side of the semiconductor stack 10 forming the light emitting surface 12 for incoherent light and laser light. Regarding the light component, it propagates through the incoherent light semiconductor crystal WJ3A with almost no absorption in the incoherent light semiconductor crystal layer 3A, is confined by the semiconductor crystals @2.4 and 5, and is propagated through the incoherent light semiconductor crystal WJ3A. It reaches the light emitting surface 12 for laser light. Therefore, the light generated in the semiconductor crystal layer portion M1 is treated as incoherent light having an intensity with respect to the wavelength shown in FIG.
2, it can be obtained by radiating to the outside. In this case, if the current from the incoherent light power source continues to flow through the semiconductor stack 10, the incoherent light radiated to the outside from the incoherent light and laser light emitting surface 12 will be A relatively high brightness can be obtained depending on the 'R flow flowing through the incoherent light semiconductor crystal 1i3A of the crystal layer 3. Furthermore, the incoherent light obtained by being radiated to the outside from the light emitting surface 12 for incoherent light and laser light is transmitted to the semiconductor crystal layer 3A for incoherent light on the light emitting surface 12 for incoherent light and laser light. Since the light is emitted to the outside from a local region called the end face of the semiconductor crystal layer portion M1, the incoherent light obtained by being emitted to the outside from the light emitting surface 12 for incoherent light and laser light is incoherent. Optical semiconductor crystal layer 3
The radiation is emitted at a relatively narrow radiation angle depending on the thickness of the semiconductor crystal layer portion M1 of A. Therefore, according to the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, incoherent light is transmitted from the light emitting surface 12 for incoherent light and laser light to the outside at a comparatively high intensity. can be obtained with a narrow radiation angle. Further, according to the conductor light emitting device 1i1 according to the present invention shown in FIGS. 1 to 4, the electrode layer 15B for laser light of the electrode layer 15 is
If a required power source for laser light is connected between the electrode layer 16 and the electrode layer 16, a current flows from the power source for laser light to the semiconductor stack 1.
0, the laser beam semiconductor crystal 11 flows through the laser beam semiconductor crystal layer 3B of the semiconductor crystal N3.
3B, light having a band centered on a wavelength corresponding to the energy bandgap is generated. The light generated in the laser beam semiconductor crystal layer 3B is transmitted to the semiconductor crystal layer portion M1 of the incoherent light semiconductor crystal layer 3A disposed on the end surface 11a side of the semiconductor stack 10. Since it has a wider energy bandgap than the semiconductor crystal layer 3B for laser light disposed on the side 11b, the layer 3B is placed on the end face 11a side of the semiconductor stack 10 forming the light emitting surface 12 for incoherent light and laser light. For the oncoming light component, the laser beam semiconductor crystal layer 3B and the incohesin 1-light semiconductor crystal layer 3A,
It is hardly absorbed in the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 3A for incoherent light, and is confined by the semiconductor crystal layers 2.4 and 5 to the light emitting surface 12 side for incoherent light and laser light. It propagates and is then reflected by the light emitting surface 12 for incoherent light and laser light, facing toward the semiconductor crystal layer 3B for incoherent light, and also toward the end face 1 of the semiconductor stack 10.
The light component heading toward the semiconductor W4 layer body 10 is propagated toward the end surface 1ib side of the semiconductor W4 layered body 10, being confined by the semiconductor crystals M2.4 and M2.5 without being absorbed in the semiconductor crystal layer 3B for laser light. Next, the end surface 11b
reflect. Therefore, if a current from the laser light power source is continuously passed through the semiconductor stack 10, laser oscillation will occur, and based on this, the laser light whose intensity depends on the wavelength as shown in FIG. 6 will be generated. , for incoherent light and laser light is emitted from the moonlight emitting surface 12 to the outside. Therefore, according to the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, laser light can be obtained externally from the incoherent light and laser light moonlight emission surfaces 12. From the above, according to the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, incoherent light and laser light can be emitted in the same incoherent light and laser light with one element configuration. It can be obtained externally from surface 12. Therefore, the semiconductor light emitting device can be made much smaller than the conventional semiconductor light emitting device described above. Furthermore, when incoherent light and laser light are supplied to a common optical system, a common transmission path can be used for the incoherent light and the laser light. The means for supplying these to a common optical system can be made much simpler and smaller than in the case of the conventional semiconductor light emitting device described above.

[Embodiment 2] Next, a second embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 7 to 11. In FIGS. 7 to 11, parts corresponding to those in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof will be omitted. The semiconductor light emitting device according to the present invention shown in FIGS. 7 to 11 has the same structure as the semiconductor light emitting device according to the present invention described above in FIGS. 1 to 4, except for the following matters. That is, instead of the case of FIGS. 1 to 4 in which the semiconductor crystal layer 3A for incoherent light of the semiconductor crystal layer 3 has one semiconductor crystal layer portion M1, the semiconductor crystal layer 3A for laser light
It has two semiconductor crystal layer parts M1 and M2 which are successively arranged in series from the side opposite to the B side to the laser beam semiconductor crystal layer 3B side, and the C1 semiconductor crystal layer 4A corresponds to the semiconductor crystal layer part M1 and M2. The semiconductor crystal layer 6A has two semiconductor crystal layer portions W1 and W2 formed thereon corresponding to M1 and M2, respectively.
The laser photoelectrode layer 15A has two semiconductor crystal layer portions Q1 and C2 which correspond to the semiconductor crystal layer portions Q1 and C2 and are separated from each other. Attached electrode layer parts E1 and E
It has 2. In this case, the semiconductor crystal layer portions M1 and M2 of the semiconductor crystal 1i3A both have a larger energy band gap than the semiconductor crystal layer 3B, but the energy band gap E is smaller in that order. It has H1 and EQH2. Note that the semiconductor crystal layer 4A may in principle consist of one semiconductor crystal layer portion, and therefore does not need to have the semiconductor crystal layer portions W1 and W2, but the semiconductor crystal layer 3A for incoherent light Since the semiconductor crystal layer portions M1 and M2 are formed in the same manner as the semiconductor crystal layers 3A and 3B are formed according to the above-described case, the semiconductor crystal layer portion W
1 and W2. The above is the configuration of the second embodiment of the semiconductor light emitting device according to the present invention. According to the semiconductor light emitting device according to the present invention having such a configuration, in accordance with the case of the semiconductor light emitting device according to the present invention described above in FIGS. 1 to 4, the incoherent light electrode layer 15A of the electrode layer 15 is If a required incoherent light power source is connected between the electrode layer portion E1 (or E2) and the electrode 116, a current is applied to the semiconductor stack 10 from the incoherent light power source to the semiconductor crystal layer 3. Semiconductor crystal layer portion M1 of coherent light semiconductor crystal 113A
(or M2), the incoherent optical semiconductor crystal I! 3A semiconductor crystal layer portion M1
(or M2), its 4' conductor crystal layer portion M1
H2 light having a band centered on the wavelength corresponding to the energy bandgap E (or (781 E) of (or M2) is generated. Then, the light generated in the semiconductor crystal layer M, (or M2) The light is transmitted to the semiconductor crystal layer M2 and the semiconductor crystal layer for laser light 3B (or the semiconductor crystal layer for laser light 3B) which are arranged on the end surface 11b side of the semiconductor stack 10 and the semiconductor crystal layer of the semiconductor crystal layer for incoherent light 3A. Since it has a smaller energy bandgap than the layer portion M1, the light component directed toward the end surface 11b of the semiconductor stack 10 is confined by the semiconductor crystal layers 2, 4 and 5, and the semiconductor layer 3 is confined by the semiconductor crystal layers 2.4 and 5. 10, but most of it is absorbed within the semiconductor crystal layer portion M2 of the semiconductor crystal layer 3 and the semiconductor crystal layer 3B for laser light (or the semiconductor crystal layer 3B for laser light), and most of it is propagated to the end surface 11b. Although not reaching the end face 11 of the semiconductor stack 10 forming the light emitting surface 12 for incoherent light and L/-the light
For the light component directed toward the a side, the semiconductor crystal layer portion M1 (or the semiconductor crystal layer portions M1 and M2) of the semiconductor crystal layer for incoherent light 3A is replaced with the semiconductor crystal layer portion M1 of the semiconductor crystal layer for incoherent light 3A. The light emitting surface 1 for incoherent light and laser light propagates while being confined by the semiconductor crystal layers 2.4 and 5 without being almost absorbed in the semiconductor crystal layer portions M1 and M2 (or the semiconductor crystal layer portions M1 and M2).
Reach 2. Therefore, the light generated in the semiconductor crystal layer portion M1 (or M2) is emitted as incoherent light to the outside from the light emitting surface 12 for incoherent light and laser light. Furthermore, if a required laser beam power source is connected between the laser beam electrode 1i-158 of the electrode layer 15 and the electrode layer 16,
As in the case of the semiconductor light emitting device according to the present invention described above with reference to FIGS. 1 to 4, a current flows from the laser light power supply to the semiconductor stack 10 to form the laser light semiconductor crystal layer 3B of the semiconductor crystal H3. Since the laser beam flows through the laser beam semiconductor crystal layer 3B, light having a band centered on a wavelength corresponding to the energy band gap is generated in the laser beam semiconductor crystal layer 3B. The light generated in the semiconductor crystal layer 3B for laser light is transmitted to the semiconductor crystal layer portions M and M2 of the semiconductor crystal layer 3A for incoherent light disposed on the end surface 11a side of the semiconductor stack 10. The semiconductor laminate 1 forming the light emitting surface 12 for incoherent light and laser light has a wider energy band gap than the semiconductor crystal layer 3B for laser light disposed on the end surface 11b side of the semiconductor layer 1.
Regarding the light component directed toward the end surface 11a side of 0, the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 3 for incoherent light
A is hardly absorbed in the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 3A for incoherent light, and is confined by the semiconductor crystal layers 2.4 and 5, resulting in a light emitting surface for incoherent light and laser light. 12
The light propagates to the side, and then is reflected by the light emitting surface 12 for incoherent light and laser light, and is directed toward the semiconductor crystal layer 3B for incoherent light, and also toward the end surface 11b of the semiconductor stack 10. The light component propagates through the laser beam semiconductor crystal layer 3B to the end surface 11b side of the semiconductor stack 10 while being confined by the semiconductor crystal layers 2.4 and 5 without being absorbed therein. End face 1
It is reflected by 1b. Therefore, if the current from the laser light power supply continues to flow through the semiconductor stack 10, laser oscillation will occur, and the laser light based on this will be transmitted to the incoherent light and laser light emitting surfaces 12. radiated to the outside. Therefore, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 7 to 11, similarly to the case of the semiconductor light emitting device according to the present invention described above in FIGS. The light emitting surface 12 for laser light and laser light can be obtained externally. From the above, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 7 to 11, as well as in the case of the semiconductor light emitting device according to the present invention described above in FIGS. With this configuration, incoherent light and laser light can be obtained to the outside from the same light emitting surface 12 for incoherent light and laser light. Therefore, the semiconductor light emitting device can be made much smaller than the conventional semiconductor light emitting device described above. Furthermore, when incoherent light and laser light are supplied to a common optical system, a common transmission path can be used for the incoherent light and laser light. The means for supplying the light to the common optical system can be made much simpler and smaller than in the case of the conventional semiconductor light emitting device described above. Further, according to the semiconductor light emitting device according to the present invention shown in FIGS. 7 to 11, different incoherent light is provided between each of the electrode layer portions E and E2 of the incoherent light electrode layer 15A and the electrode layer 16. By connecting the optical power source, the semiconductor crystal layer portion M of the incoherent optical semiconductor layer 3
1 and M2, respectively, and therefore, the radiation surface 12 for incoherent light and for laser light can be obtained.
can be obtained by simultaneously emitting two incoherent lights having different wavelength centers to the outside, and the intensity of the light emitted from each of the semiconductor crystal layer parts M and M2 can be adjusted separately. It is possible to adjust the intensity distribution with respect to the wavelength of the incoherent light emitted from the light emitting surface for incoherent light and laser light. Furthermore, the energy band gaps E and E of the semiconductor crystal layer portions M1 and M2 of the semiconductor crystal layer for incoherent light 3A are determined by g81 gM2. If the value is selected in advance so that a large difference QHl gH2 can be obtained between the energy band gaps E and E within the range where they can be obtained overlappingly, then the light emitting surface 12 for incoherent light and laser light can be emitted to the outside. The resulting incoherent light can be treated as having one band with a widened bandwidth, as shown in FIG. Embodiment 3 Next, a third embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 13 and 14. In FIGS. 13 and 14, parts corresponding to those in FIGS. 1 to 4 are designated by the same reference numerals, and detailed description thereof will be omitted. The semiconductor light emitting device according to the present invention shown in FIGS. 13 and 14 has the configuration described above in FIGS. End face 1 as light emitting surface 12 for laser light
On the side opposite to the 1a side, a laser beam electrode layer 15B1
A groove 17 is formed across the semiconductor crystal layers 6.5.4 and 3 and reaches into the semiconductor crystal layer 2, and the end face 11 of the full 17
The inner surface of the a side is the semiconductor light emitting i described above in FIGS. 1 to 4.
The end face 11b of the semiconductor stack 10 in the position, and
The part on the side opposite to the end surface 11a side of the semiconductor stacked body 10 across the groove 17 (the laser beam electrode layer 15B, the semiconductor crystal layer 6
．． 5. Corresponding parts to 4 and 3 are given the same symbols with dashes) when laser light is emitted from the light emitting surface 12 for incoherent light and laser light. It has the same configuration as that shown in FIGS. 1 to 4, except that the photodiode 18 is used to monitor light by using laser light obtained from the end surface 11b, which is the inner surface of the groove 17 on the end surface 11a side. . The above is the configuration of the third embodiment of the semiconductor light emitting device according to the present invention. According to the semiconductor light emitting device according to the present invention having such a configuration, the light for incoherent light and laser light can be produced with the same effect as the semiconductor light emitting device according to the present invention described above in FIGS. 1 to 4. It can be obtained by selectively emitting incoherent light and laser light to the outside from the radiation surface 12, and when the laser light is being emitted to the outside, the laser light can be monitored by the photodiode 18. . Therefore, according to the semiconductor light emitting device according to the present invention shown in FIGS. 13 and 14, it is possible to selectively obtain incoherent light and laser light in one element configuration T-, and also to emit laser light to the outside. The laser beam can be monitored if the

Embodiment 4 Next, a fourth embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 15 to 18. In FIGS. 15 to 18, parts corresponding to those in FIGS. 1 to 4 are designated by the same reference numerals, and detailed description thereof will be omitted. The semiconductor light emitting device according to the present invention shown in FIGS. 15 to 18 has the following configuration. That is, the semiconductor crystal substrate 1 described above in FIGS. 1 to 4
A semiconductor crystal substrate 1 having, for example, an n-type similar to that, and a semiconductor crystal layer described above in FIGS. 1 to 4, which is formed on the semiconductor crystal substrate 1 in contact with it and has the same n-type as the semiconductor crystal substrate 1. A semiconductor crystal layer 2 similar to 2, and an impurity formed on the semiconductor crystal layer 2 in contact with it, and neither an n-type impurity nor a p-type impurity is intentionally introduced, or even if it is introduced. It has an incoherent light semiconductor crystal layer 3A similar to the incoherent light semiconductor crystal layer 3A of the semiconductor crystal 113 described above in FIGS. 1 to 4, which is introduced only at a sufficiently low concentration. It also has a semiconductor crystal layer 2' corresponding to the semiconductor crystal layer 2 formed on the semiconductor crystal 13A. This semiconductor crystal layer 2' is a semiconductor crystal layer 3 for incoherent light.
It has a wider energy bandgap and a relatively thinner thickness than A and the semiconductor crystal layer 3B for laser light described below, and also has an n-type in the region under the semiconductor crystal layer 3B for laser light. Either the impurity giving the n-type or the impurity giving the p-type is not intentionally introduced into the semiconductor crystal layer 20' having the n-type and the impurity giving the p-type or the impurity giving the p-type. A semiconductor crystal layer 2D having p-type conductivity or not introduced into the semiconductor crystal layer 2D. In the figure, the semiconductor crystal layer 2C' is shown as having n-type, and the solid crystal layer 2D' is shown as having p-type. Furthermore, on the incoherent light semiconductor crystal layer 3A,
The end surface 11 of the semiconductor stack 10, which will be described later, corresponds to the semiconductor crystal layer portion M1 of the incohesin 1-optical semiconductor crystal layer 3A described above in FIGS. 1 to 4.
The laser described above in FIGS. 1 to 4 is formed by stacking the semiconductor crystal 1t2c' of the semiconductor crystal layer 2' on the semiconductor crystal layer 1t2c' of the semiconductor crystal layer 2' which is left on the a side. It has a laser beam semiconductor crystal layer 3B similar to the optical semiconductor crystal layer 3B. Moreover, it has a semiconductor crystal layer 20 which has a wider energy band gap than the above-mentioned semiconductor crystal layer 3A formed on the semiconductor crystal layer 3B for laser light and is p-type. Furthermore, the semiconductor crystal substrate 1, the semiconductor crystal layer 2, the semiconductor crystal for incoherent light 113A, the semiconductor crystal layer 2', the semiconductor crystal layer for laser light 3B, and the semiconductor crystal 1
17 and 1.
As is clear from the perspective of FIG. Grooves 21L and 21R having a depth (terminating in the crystal layer 2) are formed. In addition, a p-type semiconductor crystal layer 6L, which is formed to extend within the groove 211 and on the surface opposite to the groove 21R side when viewed from the groove 21L of the semiconductor layer 20, and a semiconductor crystal layer 6L, which is formed inside the groove 2IR and extends on the surface opposite to the groove 21R side when viewed from the groove 21L of the semiconductor layer 20. A semiconductor crystal layer 6R having p-type is formed to extend on the side opposite to the groove 21L side when viewed from the full 21R of 20, and a semiconductor crystal layer 6R having p-type is formed to extend on the semiconductor layers 6L and 6R, respectively. Semiconductor layers 7L and 7 having n-type
It has R. In addition, on the region between f121L and 21R of the semiconductor crystal layer 20, the semiconductor crystal layer 3 for incoherent light is
On the semiconductor crystal layer portion M1 of A and on the semiconductor crystal layer 3B for laser light, the semiconductor crystal layers 7L and 7R are continuously extended via the semiconductor crystal layers 2D' and 20, respectively, and are described above.
A semiconductor crystal layer 4 similar to the semiconductor crystal layer 4 described above with reference to FIGS. 1 to 4 is formed continuously and extended on the top. Furthermore, FIGS.
It has semiconductor crystals 116A and 6B of the semiconductor crystal layer 6 similar to the semiconductor crystal layers 6A and 6B of the semiconductor crystal layer 6 described above in FIG. Further, electrode layers 15 similar to those described above in FIGS. 1 to 4 are formed on the semiconductor crystal layers 6A and 6B, respectively.
It has an incoherent light electrode 1i15A and a laser light electrode layer 15B. Further, it has an electrode 116 similar to that described above in FIGS. 1 to 4, which is formed on the surface of the semiconductor crystal substrate 1 opposite to the semiconductor crystal II2 side. In addition, the above-mentioned semiconductor crystal substrate 1, semiconductor crystal layer 2, semiconductor crystal layer for incoherent light 3A, semiconductor crystal layer for laser light 3B, semiconductor crystal layers 6L, 6R, 7m and 7R
1 and semiconductor crystal layers 4.6A and 6B.
The semiconductor stack 10 corresponding to the semiconductor stack 10 described above in FIG. 4 has end surfaces 11a and 11b similar to those described above in FIGS. 1 to 4, and on the end surface 11a,
As described above with reference to FIGS. 1 to 4, an antireflection film 13 is formed to serve as the radiation surface 12 for incoherent light and laser light. The above is the configuration of the fourth embodiment of the semiconductor light emitting device according to the present invention. The semiconductor light emitting device according to the present invention having such a configuration can be manufactured as described below with reference to FIGS. 19 to 38. That is, as shown in FIGS. 19 to 22, the above-described semiconductor crystal layer 2, the above-described incohesin 1 to the optical semiconductor crystal layer 3A, and the above-described semiconductor crystal layer are placed on the above-described semiconductor crystal substrate 1. A semiconductor crystal layer 2X' which becomes 2,
The semiconductor crystal layer 3BX, which will become the semiconductor crystal layer 3B for laser light described above, and the semiconductor crystal layer 20X, which will become the semiconductor crystal layer 20 described above, are laminated in that order by an epitaxial growth method. Next, semiconductor crystals! By means of an etching process known per se, using masks for 20X and 3BX, the second
As shown in FIGS. 3 to 26, the above-described semiconductor crystal layer 20 and laser beam semiconductor crystal layer 3B are formed from the semiconductor crystal layers 20X and 3BX, respectively. Next, the semiconductor crystal substrate 1, the semiconductor crystal layer 2, the semiconductor crystal for incoherent light 113A, and the semiconductor crystal layer 2
X', a semiconductor crystal layer 3B for laser light, and a semiconductor crystal layer 20, extending in parallel to each other from the upper surface side as shown in FIGS. 27 to 30. 211 and 21R are formed. Next, the semiconductor crystal substrate 1, the semiconductor crystal layer 2, the semiconductor crystal layer 3A for incoherent light, and the semiconductor crystal layer 2X
' 211 and 21R on the semiconductor stack having the laser beam semiconductor crystal layer 3B and the semiconductor crystal layer 20.
A step is performed in which semiconductor crystal layers 6L and 6R and semiconductor crystal layers 7L and 7R are formed in that order by epitaxial growth so as to fill the space. In this case, the semiconductor crystal layers 6L and 6R1 and 7L and 7R do not grow on the region between 1I21L and 21R of the semiconductor crystal layers 2X' and 20 due to their narrow area, but the semiconductor crystal layers 112X' and 20 Groove 2
The area opposite to the groove 21R side when viewed from 1L and the groove 21R
Since the semiconductor crystal layers 6L and 6R1 and 7L and 7R are grown on the region opposite to the trench 21R side when viewed from the top because of their large area,
It is formed so as to extend within R and over the region of the semiconductor crystal layers 2X' and 20 on the side opposite to the 21R side when viewed from the groove 21L, and on the area opposite to the full 21L side when viewed from the groove 21R. Subsequently, as shown in FIGS. 31 to 34, the above-mentioned semiconductor crystal layer 4 and the above-mentioned semiconductor crystal layer 4 are placed on the regions between the grooves 211 and 21R of the semiconductor crystal layers 7L and 7R and the semiconductor crystal layers 20X and 20. A semiconductor crystal layer 6x that will become the semiconductor layer 6 having semiconductor crystal layers 6A and 6B is formed by stacking them in that order by an epitaxial growth method. in this case,
Semiconductor crystal W! The region in contact with the semiconductor crystal layer 4 of 12X' becomes p-type by introducing the p-type impurity from the semiconductor crystal N4 into it, and therefore, the region from the semiconductor crystal layer 2X' to the semiconductor crystal layer 2C' mentioned above becomes p-type. and 2D' is formed. Next, as shown in FIGS. 35 and 36, the above-described incoherent light electrode layer 15 is placed on the semiconductor crystal layer 6X.
A and laser beam electrode! 15B, and then or before that, as shown in FIGS. 37 and 38, the above-mentioned semiconductor crystal layers 6A and 6B are etched from the semiconductor crystal 6X by etching the semiconductor crystal layer 6X. Form. Next, although not shown, an electrode layer 16 is formed on the surface of the semiconductor crystal substrate 1 opposite to the semiconductor crystal layer 2 side. Semiconductor crystal layer 3A, semiconductor crystal 1i4, and semiconductor crystal It! for laser light! 3B and the semiconductor crystal layer 20.4.
6A and 6B and incoherent light electrode 1115A
The laminated body having the laser beam electrode layer 15B and the electrode layer 16 is cleaved to form opposite end surfaces 11a and 1.
1b, and an anti-reflection layer 1 is formed on one end surface 11a.
form 3. The above is an embodiment of the method for manufacturing the semiconductor light emitting device according to the present invention described above with reference to FIGS. 15 to 18. As described above, the semiconductor light emitting device according to the present invention shown in FIGS. 15 to 18 has been clarified, but the fourth aspect of the semiconductor light emitting device according to the present invention shown in FIGS. 15 to 18 having such a configuration is as follows. According to the embodiment, if a required power source for incoherent light is connected between the electrode layer 15A for incoherent light and the electrode layer 16 of the electrode 1ii15, a current flows from the power source for incoherent light to the semiconductor laminated layer. to the body 10,
Since it flows through the semiconductor crystal layer portion M1 of the semiconductor crystal layer for incoherent light 3A, in the semiconductor crystal layer portion M1 of the semiconductor crystal layer for incoherent light 3A,
Light having an H1 band centered on a wavelength corresponding to the energy bandgap E of the semiconductor crystal layer 3A for incoherent light is generated. The light generated in the semiconductor crystal layer portion M1 of the semiconductor crystal layer for incoherent light 3A is transferred to the semiconductor crystal layer for incoherent light 113 by the semiconductor crystal layer for laser light 3B.
It is disposed closer to the end surface 11b of the semiconductor stack 10 than the semiconductor crystal layer portion M1 of A, and has a smaller energy band gap than the semiconductor crystal layer portion M1 of the incoherent light semiconductor crystal layer 3A, and also has an incoherent Since the optical semiconductor crystal layer 3A is optically coupled to the laser beam semiconductor crystal layer 3B via the semiconductor crystal layer 2G' of the semiconductor crystal layer 2', light components directed toward the end surface 11b side of the semiconductor stack 10 are Regarding the incoherent light semiconductor crystal layer 3A,
Although it is confined by the semiconductor crystal layers 2 and 4 and tries to propagate to the end face 11bill of the semiconductor stacked body 10, it is almost absorbed within the semiconductor crystal layer 3B for laser light and hardly reaches the end face 11b. However, the light generated in the semiconductor crystal layer portion M1 of the semiconductor crystal layer 3A for laser light is transmitted to the end surface 1 of the semiconductor stack 10.
The light component heading toward 1a side propagates through the semiconductor crystal layer portion M1 of the incoherent light semiconductor crystal layer 3A without being absorbed therein, being confined by the semiconductor crystals H2 and 4, and propagates into the incoherent light and semiconductor crystal layer portions M1. It reaches the light emitting surface 12 for laser light. Therefore, the light generated in the semiconductor crystal layer portion M1 of the semiconductor crystal layer 3A for incoherent light is obtained by being radiated to the outside from the light emitting surface 12 for incoherent light and laser light as incoherent light. In this case, as in the case of the semiconductor light emitting device according to the first invention of the present application shown in FIGS. The incoherent light emitted to the outside from the light emitting surface 12 for incoherent light and laser light can be obtained with relatively high brightness depending on the current flowing through the semiconductor crystal layer portion M1 of the semiconductor crystal layer 3A for incoherent light. It will be done. Furthermore, the incoherent light obtained by being radiated to the outside from the light emitting surface 12 for incoherent light and laser light is transmitted to the semiconductor crystal layer 3A for incoherent light on the light emitting surface 12 for incoherent light and laser light. Since the light is emitted to the outside from a local region called the end face of the semiconductor crystal layer portion M1, the incoherent light obtained by being emitted to the outside from the light emitting surface 12 for incoherent light and laser light is incoherent. Optical semiconductor crystal layer 3
The radiation is emitted at a relatively narrow radiation angle depending on the thickness of the semiconductor crystal layer portion M1 of A. Therefore, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 15 to 18, as in the case of the semiconductor light emitting device according to the first invention of the present application described above in FIGS. 1 to 4,
Incoherent light can be obtained externally from the light emitting surface 12 for incoherent light and laser light with a relatively high intensity and with a relatively narrow emission angle. Furthermore, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 15 to 18, the first
As in the case of the semiconductor light emitting device according to the second invention, the laser beam electrode layer 15B of the electrode layer 15 and the electrode 4f! If a required power supply for laser light is connected between the layer 16 and the power supply for laser light, a current is supplied from the power supply for laser light to the semiconductor stack 10 to the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 2' for laser light. It flows through the semiconductor crystal layer 20' under the semiconductor crystal layer 3B and the region under the laser light semiconductor crystal layer 3B of the incohesin 1-light semiconductor crystal layer 3A, and in this case, the laser light semiconductor crystal layer 20' 3B is a semiconductor crystal layer 3B for incoherent light and a semiconductor crystal w? Since it has a smaller energy bandgap than 'J2', the semiconductor crystal FF 13B for laser light actually generates light having a band centered on a wavelength corresponding to the energy bandgap. Then, the light generated in the semiconductor crystal layer 3B for laser light is transmitted to the incoherent light semiconductor crystal layer 3A, which has a wider energy band gap than the semiconductor crystal JFi 3B and the semiconductor crystal layer 2'. crystal 112
Since it is coupled to the semiconductor crystal layer 3B for laser light through c', the light component directed toward the end surface 11a side of the semiconductor stack 10 forming the light emitting surface 12 for incoherent light and laser light. The semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 3A for incoherent light are confined by the semiconductor crystal layers 2 and 4 without being absorbed, and finally the semiconductor crystal layer 3A for incoherent light is and propagates to the end surface 11a side of the semiconductor stack 10, and then,
It is reflected by the end surface 11a, passes through the incoherent light semiconductor crystal 1i3A toward the end surface 11b, and
Regarding the light component directed toward the end surface 11b, for the same reason as described above, the semiconductor crystal layer 3B for laser light and the semiconductor crystal layer 3A for incoherent light are
The light is hardly absorbed, is confined by the semiconductor crystal layers 2 and 4, and finally propagates through the semiconductor crystal layer 3A for incoherent light toward the end surface 11b, and is then reflected at the end surface 11b. Then, it passes through the incoherent light semiconductor crystal layer 3A toward the end surface 11a side. Therefore, if the current from the laser light power supply continues to flow, laser oscillation will occur, as in the case of the semiconductor light emitting device according to the present invention described above in FIGS. 1 to 4, and based on this, Laser light having the intensity for the wavelength as described above in FIG. 6 is radiated to the outside from the light emitting surface 12 for incoherent light and laser light. Therefore, in the case of the semiconductor light emitting device according to the present invention shown in FIGS. 15 to 18, similarly to the case of the semiconductor light emitting VR device according to the present invention described above in FIGS. From the light emitting surface 12 for light and laser light can be obtained externally. From the above, in the case of the semiconductor light-emitting device according to the present invention shown in FIGS. In this way, incoherent light and laser light can be obtained to the outside from the same light emitting surface 12 for incoherent light and laser light. Therefore, as in the case of the semiconductor light emitting device according to the present invention described above with reference to FIGS. 1 to 4, it is possible to significantly reduce the size of the semiconductor light emitting device compared to the case of the conventional semiconductor light emitting device described above. can. Furthermore, when incoherent light and laser light are supplied to a common optical system, as in the case of the semiconductor light emitting device according to the present invention described above with reference to FIGS. Since a common transmission path can be used for both, a means for supplying incoherent light and laser light to a common optical system is shown in FIGS.
Similar to the semiconductor light emitting device according to the present invention described above with reference to FIG. 4, it can be made much simpler and smaller than the conventional semiconductor light emitting device described above.

Embodiment 5 Next, a fifth embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 39 and 40. In FIGS. 39 and 40, FIGS. 15 to 18,
Corresponding parts to those in FIGS. 7 to 11 are designated by the same reference numerals, and detailed description thereof will be omitted. The semiconductor light emitting device according to the present invention shown in FIGS. 39 and 40 includes a semiconductor crystal layer 2' and a semiconductor crystal layer 3B for laser light.
In between, there is a semiconductor crystal HJ3A' for incoherent light similar to the semiconductor crystal layer portion M2 of the semiconductor crystal layer 3A for Yangbaik's incoherent light shown in FIGS. 7 to 11, and a semiconductor similar to the semiconductor layer 2'. It has the same structure as the case of FIGS. 15 to 18, except that the layer 2'' is laminated and interposed in that order. However, in this case, the semiconductor crystal layer 3A for incoherent light ' is formed on the incoherent light semiconductor crystal layer 3A through the semiconductor crystal 12G' of the semiconductor crystal layer 2', leaving the end face 11a side part as the semiconductor crystal layer part M1, and
The semiconductor crystal layer 3B for laser light is formed by forming the semiconductor crystal layer 2 on the semiconductor crystal M3A' for incoherent light, leaving a portion on the end face 11a side as a semiconductor crystal layer portion M2.
``Semiconductor crystal layer 2C'' similar to semiconductor crystal layer 2G'
is formed through. The above is the fifth embodiment of the semiconductor light emitting device according to the present invention. According to the semiconductor light emitting device according to the present invention having such a configuration, the above-described points regarding the semiconductor light emitting device according to the present invention described above in FIGS. 15 to 18 and the points described in the section [Operations and Effects] Since it is also obvious, detailed explanation will be omitted, but FIGS. 15 to 18 and FIGS.
Functions and effects similar to those of the semiconductor light emitting device according to the present invention described above with reference to FIG. 8 can be obtained. In addition, in the embodiments described above in FIGS. 1 to 14,
Although the case where the semiconductor crystal layer 3A has one semiconductor crystal layer section M1 and the case where it has two semiconductor crystal layer sections M1 and M2 have been described,

As is clear from the section "Means for Solving the Problems", three or more semiconductor crystal layer sections can be provided to obtain three or more incoherent lights, and When the semiconductor crystal layer 3A has a plurality of semiconductor crystal layer parts, the incoherent light electrode layer 15A can also have one common electrode layer part for the plurality of semiconductor crystal layer parts. Furthermore, in the embodiments described above in FIGS. 15 to 40, cases were described where there was one semiconductor crystal layer for incoherent light and cases where there were two semiconductor crystal layers.

As is clear from what is stated in the section [Means for Solving the Problems], three or more semiconductor crystal layers for incoherent light are provided,
It is also possible to obtain three or more incoherent lights, and the semiconductor crystal layer for incoherent light is the first,
If there is a plurality of second semiconductor crystal layers for incoherent light, both end faces of the first semiconductor crystal layer for incoherent light are placed on end faces 11a and 11b, respectively. However, the other 2nd and 3rd...
Regarding the semiconductor crystal layers for incoherent light, both end faces thereof do not need to be arranged on the end faces 11a and 11b, and the electrode layer 15A for incoherent light does not need to be arranged on the end faces 11a and 11b. It is also possible to have one common electrode layer section for the semiconductor crystal layer for coherent light, and further omit the semiconductor crystal layers 2D' and 2D'' of the semiconductor crystal layers 2' and 2''. You can also do it. Furthermore, in the embodiments of the semiconductor light emitting device according to the present invention described above, "n type" may be read as "p type", "p type" may be read as "n type", and in other embodiments of the present invention. Various modifications and changes may be made without losing the spirit.

[Brief explanation of the drawing]

1, 2, 3, and 4 are a linear plan view showing a first embodiment of a semiconductor light emitting device according to the present invention, a sectional view taken along the line 2-2, and a sectional view taken along the line 3-3. They are a sectional view and a sectional view taken along line 4-4. FIG. 5 illustrates the first embodiment of the semiconductor light emitting device according to the present invention shown in FIGS. 1 to 4, which is obtained by emitting light to the outside from the light emitting surface for incoherent light and laser light. FIG. 3 is a diagram showing the relationship between intensity and wavelength of incoherent light. FIG. 6 is a diagram illustrating the first embodiment of the semiconductor light emitting device according to the present invention shown in FIGS. FIG. 3 is a diagram showing the relationship between intensity and wavelength of laser light. Figures 7, 8, 9, 10, and 11 are
A linear plan view showing a second embodiment of the semiconductor light emitting device according to the present invention, a cross-sectional view on the line 828, a cross-sectional view on the line 9-9, a cross-sectional view on the line 10-10, and a cross-section on the line 11-11. It is a diagram. FIG. 12 illustrates the second embodiment of the semiconductor light emitting device according to the present invention shown in FIGS. 7 to 11, which is obtained by emitting light to the outside from the light emitting surface for incoherent light and laser light. FIG. 3 is a diagram showing the relationship between intensity and wavelength of incoherent light. FIG. 13 and FIG. 14 are line plan views showing the third embodiment of the flat conductor light emitting device according to the present invention, and 14-1 thereof.
It is a sectional view on line 4. 15, 16, 17, and 18 are a schematic plan view showing a fourth embodiment of the semiconductor light emitting device according to the present invention, a cross-sectional view along the line 16-16, and a sectional view along the line 17-17. FIG. 2 is a cross-sectional view and a cross-sectional view taken along line 18-18. Figures 19, 20, 21 and 22 are
A linear plan view in the first step, a cross-sectional view on the line 20-20, a cross-sectional view on the line 21-21, and a cross-sectional view on the line 22 It is a sectional view on line -22. Figures 23, 24, 25 and 26 are
A linear plan view in the second step, a cross-sectional view along the line 24-24, a cross-sectional view along the line 25-25, and a cross-sectional view along the line 25-25, showing the embodiment of the method for manufacturing a semiconductor light emitting device according to the present invention shown in FIGS. It is a cross-sectional view on line -26. Figures 27, 28, 29 and 30 are
A linear plan view in the third step, a cross-sectional view on the line 28-28, a cross-sectional view on the line 29-29, and a cross-sectional view on the line 30 It is a cross-sectional view on the -30 line. Figures 31, 32, 33 and 34 are
A linear plan view in the fourth step, a cross-sectional view along the line 32-32, a cross-sectional view along the line 3133, and a cross-sectional view along the line 34-34, showing the embodiment of the method for manufacturing a semiconductor light emitting device according to the present invention shown in FIGS. It is a sectional view on a line. Figures 35, 36, 37 and 38 are
A linear plan view in the fifth step, a cross-sectional view along the line 36-36, a cross-sectional view along the line 37-37, and a cross-sectional view along the line 38 It is a cross-sectional view on line -38. 39 and 40 are line plan views showing the fifth embodiment of the semiconductor light emitting device according to the present invention, and 40-40 thereof.
It is a sectional view on a line. 1...... Semiconductor crystal substrate 2, 2'2", 3.4, 5, 6...
...... Semiconductor crystal layer 3A...
......Incoherent light semiconductor crystal layer 3B......Laser light semiconductor crystal layer 4A, 4B...Semiconductor Crystal layers 6A, 6B...Semiconductor crystal layers 6L, 6R, 71, 7R...Semiconductor crystal layer 0
・・・・・・・・・・・・・・・・・・Semiconductor laminate 1
a, llb... End surface 2... Light emitting surface 3 for incoherent light and laser light...・・・・・・Anti-reflection film 5
．． 16... Electrode layer 5A... Incoherent light electrode layer 5B... Laser light electrode layers 1L, 21R...Grooves M1-M2...Semiconductor crystal layer portions E1-E2 of the incoherent light semiconductor crystal layer 3A...Electrodes Electrode layer portions W1, W2 of layer 15A...Single conductor crystal layer portions Ql, Q2 of semiconductor crystal layer 4A...Semiconductor crystal layer 6AI7)
Semiconductor crystal layer

Claims (1)

[Scope of Claims] [Claim 1] Neither an impurity that provides a first conductivity type nor an impurity that provides a second conductivity type that is opposite to the first conductivity type is intentionally introduced or is introduced. The first semiconductor crystal layer is introduced only at a sufficiently low concentration, even if it is
are formed on and in contact with the opposing first and second main surfaces of the semiconductor crystal layer, respectively, and both have a wider energy band gap and a lower refractive index than the first semiconductor crystal layer, and A semiconductor laminate including second and third semiconductor crystal layers having first and second conductivity types, respectively, and first and second end faces formed of opposing Fabry-Perot reflective surfaces. first and second electrode layers are disposed facing each other on first and second main surfaces facing each other of the semiconductor stack, and the first semiconductor crystal layer is connected to the semiconductor layer, and a semiconductor crystal layer for incoherent light on the first end face side of the laminate, and a semiconductor crystal layer for laser light on the second end face side of the semiconductor laminate, the semiconductor crystal layer for incoherent light However, n pieces are sequentially arranged from the side opposite to the semiconductor crystal layer for laser beam side to the side of the semiconductor crystal layer for laser beam (however, n is 1).
n-th semiconductor crystal layer portions of the incoherent light semiconductor crystal layer; ...The n-th semiconductor crystal layer portion is sequentially smaller in the order of the first, second, etc.
. . . each has an n-th energy band gap, and the semiconductor crystal layer for laser light has a smaller energy band gap than the n-th semiconductor crystal layer portion of the semiconductor crystal layer for incoherent light. , an electrode layer for incoherent light in which the first electrode layer faces the semiconductor crystal layer for incoherent light;
It has an electrode layer for laser light facing the semiconductor crystal layer for laser light, and the first end surface of the semiconductor laminate is used as a light emitting surface for incoherent light and for laser light. Semiconductor light emitting device. 2. In the semiconductor light emitting device according to claim 1, the incoherent light electrode layer of the first electrode layer is the first, second, etc. of the incoherent light semiconductor crystal layer.・・・
...the first semiconductor crystal layer portions facing the n-th semiconductor crystal layer portions, respectively.
, a second . . . nth electrode layer portion. 3. The semiconductor light emitting device according to claim 1, wherein the first, second, etc. of the semiconductor crystal layer for incoherent light are provided.
...First and second of the n-th semiconductor crystal layer section...
...The n-th energy band gap is the band of light emitted in the first and second semiconductor crystal layer portions, and the second
and the light bands emitted from the third semiconductor crystal layer portion, respectively. The light bands emitted from the (n-1)th and nth semiconductor crystal layer portions are partially different from each other. A semiconductor light emitting device characterized in that each of the semiconductor light emitting devices has values that can be obtained overlappingly. (i) It is assumed that neither the impurity that gives the first conductivity type nor the impurity that gives the second conductivity type opposite to the first conductivity type is intentionally introduced, or that it is introduced. A plurality of n first, second, etc. are introduced only at sufficiently low concentrations.
......The n-th incoherent optical semiconductor crystal layer and the impurity that gives the first conductivity type or the impurity that gives the second conductivity type that is opposite to the first conductivity type are intentional. (ii) the first semiconductor crystal layer for incoherent light has a first semiconductor crystal layer for incoherent light; (iii) the above-mentioned second, third...
・The n-th semiconductor crystal layer for incoherent light is formed on the first, second, etc. (n-1)th semiconductor crystal layer for incoherent light, and a part of the semiconductor crystal layer for incoherent light is The first and second arrays are arranged sequentially when viewed from above.
(iv) formed by stacking the second, third, . The semiconductor crystal layer for laser light is placed on the n-th semiconductor crystal layer for incoherent light, with a part of the semiconductor crystal layer remaining as an n-th semiconductor crystal layer through the (n+1)th semiconductor layer. (v) the first, second...
...has a configuration in which a (n+2)th semiconductor layer is formed in a continuous and extending manner on the nth semiconductor crystal layer portion and the semiconductor crystal layer for laser light, and (vi) and facing each other. first and second fabricated Fabry-Perot reflective surfaces forming an end face on one side of the first semiconductor crystal of the first semiconductor crystal layer for incoherent light and an end face on the opposite side thereof, respectively; a semiconductor laminate having end faces, first and second electrode layers are disposed facing each other on first and second main surfaces of the semiconductor laminate facing each other, the first, 2nd......The n-th incoherent optical semiconductor crystal layer is sequentially smaller than the first,
2nd... Each has an n-th energy band gap, and the semiconductor crystal layer for laser light has a smaller energy band gap than that before the n-th semiconductor crystal for incoherent light. (i) the first semiconductor layer has a wider energy band gap and lower refractive index than the first incoherent optical semiconductor crystal layer, and has a first conductivity type; ii) The second, third, .
. . . The impurity or the first conductivity type has a wider energy band gap and a lower refractive index than the (n-1)th and nth incoherent optical semiconductor crystal layers, respectively, and gives the first conductivity type. (iii) the above-mentioned (n+1)-th
The semiconductor layer has a wider energy band gap and a lower refractive index than the n-th semiconductor crystal layer for incoherent light and the semiconductor crystal layer for laser light, and also contains an impurity or a first semiconductor layer that provides a first conductivity type. The second type is opposite to the conductivity type.
(iv) the above (n+2)th impurity is not intentionally introduced or has the first conductivity type;
) has a wider energy band gap and lower refractive index than the first to n-th semiconductor crystal layers for incoherent light and the semiconductor crystal layer for laser light, and has a second conductivity type. and a laser in which the first electrode layer is an incoherent light electrode layer facing the first to n-th incoherent light semiconductor crystal layers, and a laser beam facing the laser light semiconductor crystal layer. A semiconductor light emitting device, comprising: a light electrode layer; and the first end surface of the semiconductor laminate serves as a light emitting surface for incoherent light and laser light. 5. The semiconductor light emitting device according to claim 4, wherein the first
The incoherent light electrode layer of the electrode layer is the first electrode layer,
Second......The first and second......Nth semiconductor crystal layer portions of the n-th semiconductor crystal layer for incoherent light, respectively, are opposite to each other. 1. 2nd...
... A semiconductor light emitting device characterized by having an nth electrode layer section. 6. The semiconductor light emitting device according to claim 4, wherein the first
, second......n-th energy band gaps of the first and second......n-th energy band gaps of the n-th incoherent optical semiconductor crystal layer are the same as the first and second energy band gaps. The band of light emitted by each of the semiconductor crystal layers for incoherent light, the band of light emitted by each of the second and third semiconductor crystal layers for incoherent light......(n-1th) )
and a semiconductor light emitting device characterized in that the light bands emitted by the n-th semiconductor crystal layer for incoherent light each have values obtained by partially overlapping with each other.