JPH0225574A - Device for forming deposited film - Google Patents

Abstract

PURPOSE:To form a deposited film having uniform quality over a large area by activating plural film forming raw gases by a microwave respectively in different activation spaces of specified shape, introducing the gases into a film forming space, and mixing the gases. CONSTITUTION:Two or more kinds of film forming raw gases are separately introduced into the activation spaces separated by partition plates 105-109 through gas inlet pipes 110-113, activated by microwaves from rod-shaped microwave transmitting antennas 101-104, introduced into the film forming space 118, mixed, and allowed to react with one another to form a deposited film on a substrate 119. In this device for forming a deposited film, the raw gases activated into plasma are transported in the direction vertical to the major axis of the antennas 101-104. In addition, respective gas inlets 114-117 are formed into a rectangular or elliptical shape having >=2 ratio of the length of the major axis to that of the minor axis, narrowed to a length smaller than that of the minor axis, and set in parallel. By this method, the raw gases are effectively activated, and uniformly mixed over a large area to form a deposited film.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for forming a functional deposited film using a vapor phase growth method. More specifically, the present invention relates to a deposited film forming apparatus that can independently control the characteristics of a deposited film for each component and can form a deposited film over a large area.

[Description of prior art]

Forming a deposited film over a large area at low cost is
Optical input sensor device, photosensitive device for electrophotography,
This is urgently required in the production of semiconductor devices such as photovoltaic element liquid crystal drive circuits.

Conventionally, in forming a deposited film using the vapor phase growth method, plasma, heat, light, etc. are used as energy to decompose the raw material gas for film formation, and it is said that it is possible to form a deposited film with a large area. has been done. However, in any case, it is rare to use a single gas as the raw material gas for film formation, and even when forming a deposited film with a single composition, in addition to the raw material gas for film formation, diluted gas is used. Also,
When forming a deposited film made of a plurality of components by a vapor phase growth method, it is common to mix a plurality of film-forming raw material gases in advance and introduce the mixture into a film-forming chamber.

However, the conventional method of forming a deposited film as described above has the following problems.

In other words, even when forming a deposited film with a single composition, in order to improve the properties of the deposited film, various film formation parameters such as the mixing ratio of source gas and diluent gas must be adjusted. Optimization is required, and the range of allowable conditions for film-forming parameters is limited to a relatively narrow range. Furthermore, when forming a deposited film of multiple components, the raw material gas for each film component has a different level of decomposition energy.
Therefore, various film forming parameters such as the flow rate ratio of the raw material gas for film forming introduced into the film forming chamber are
Further, there is the problem that it is often limited and that it is quite difficult to change the flow rate ratio without reducing the quality of the deposited film.

Furthermore, when decomposing a plurality of film-forming raw material gases, it is necessary to delicately control the various conditions involved, and therefore the controllable range of film characteristics and film composition is also limited.

To solve the above-mentioned problems, a method has been proposed in which each film-forming raw material gas is activated independently, and the activated gases are mixed and reacted with each other to form a deposited film (
According to this deposited film formation method, the activation of each film-forming gas can be controlled independently, so in the case of a film with a single composition, it is possible to improve the film properties. In the case of a deposited film having a plurality of compositions, it is possible to obtain a deposited film having a desired composition ratio with a wide range of film-forming parameters without degrading the quality of the deposited film.

However, the deposited film forming apparatus using this deposited film forming method is
Compared to the conventional apparatus for forming a deposited film using a mixed gas, it is difficult to form a deposited film over a large area. In other words, in the conventional deposited film formation method using mixed gas,
If decomposition energy could be applied to a mixed gas over a wide range, it would be relatively easy to increase the area, but with the method of forming a deposited film by activating each component gas independently, Mix each of the gases after
Forming a deposited film often results in uneven film thickness and film quality, and it has been difficult to uniformly mix activated gas over a large area to form a deposited film. Specifically, a method using multiple nozzles as shown in Fig. 6 and a method using a ring-shaped outlet have been proposed.
In either case, 1lfi thickness and film quality were uneven depending on the distance from the nozzle or ring, and it was not sufficient to form a deposited film with uniform film quality over a large area.

[Purpose of the invention]

An object of the present invention is to solve the above-mentioned problems in the prior art, to form a deposited film uniformly over a large area while using a method of independently activating and mixing a plurality of film-forming gases to form a deposited film. It is an object of the present invention to provide a deposited film forming apparatus capable of forming a deposited film of film quality.

[Structure of the invention]

As a result of repeated research in order to overcome the above-mentioned problems in conventional deposited film forming apparatuses and achieve the above-mentioned object of the present invention, the present inventor has determined that a plurality of film-forming raw material gases can be used separately, respectively. In an activation space equipped with a rod-shaped microwave transmission antenna, the area around the rod-shaped antenna is activated into a plasma state by the action of the microwave transmitted to the rod-shaped antenna, and each activated raw material gas for film formation is activated into a plasma state around the rod-shaped antenna. is transported in a direction perpendicular to the long axis direction of the rod-shaped antenna, and four people mix the activated raw material gases for film-forming into the film-forming space through a plurality of gas inlets. In an apparatus that forms a deposited film on a substrate by mutual reaction of gases, the shape of the gas inlet and the distance between each gas inlet are related to the thickness and quality of the deposited film formed on the substrate. I obtained the knowledge that

The present invention was completed as a result of further research based on this knowledge, and its gist is to decompose two or more types of film-forming raw material gases in separate activation spaces. Activated through energy, the activated gases are introduced into the film forming space through separate gas introduction ports and mixed, and activated near the surface of the substrate installed in the film forming space. A deposited film forming apparatus in which the deposited gases react with each other to form a deposited film on the substrate, wherein each of the plurality of activation spaces is provided with a rod-shaped microwave transmission antenna, and! 1) Each film-forming raw material gas is activated into a plasma state around the rod-shaped antenna by the microwave transmitted to the rod-shaped antenna, and each activated gas is perpendicular to the long axis direction of the rod-shaped antenna. Further, each of the gas inlets has a rectangular or oval shape in which the length of the major axis is at least twice as long as the minor axis, and the plurality of gas inlets are The deposited film forming apparatus is characterized in that the deposited film forming apparatus is installed in parallel and close to each other at a distance less than or equal to the length of the minor axis.

Hereinafter, the present invention will be explained in detail using the drawings.

FIG. 1 is a schematic cross-sectional view in the short axis direction of a basic example of the deposited film forming apparatus of the present invention. Reference numerals 101 to 104 indicate rod-shaped antennas for transmitting microwaves, and the microwaves are transmitted from the waveguide to the rod-shaped antenna to discharge and activate the film-forming raw material gas around the rod-shaped antenna. Here, the material of the rod-shaped antenna may be metal such as SUS or N1, or sio, l Aj! The diameter of the rod-shaped antenna is appropriately determined depending on the material, the diameter of the waveguide, and the overall size of the film-forming chamber, but it is preferably 10R to 100m. The length is determined as desired depending on the area of the deposited film to be formed. By transmitting microwaves to such a rod-shaped antenna and generating plasma around it,
A large amount of electric power can be input using microwaves, and the film-forming gas can be activated uniformly in a long length.

The film-forming gases activated separately in this way are arranged in a rectangular or elliptical shape, the length of the long axis is more than twice the length of the short axis, and the distance is less than or equal to the length of the short axis. The gases are introduced into the film forming space through a plurality of gas inlet ports 1) 4 to 1) 7 installed in parallel, mixed, and the substrate 1) 9 is mixed by mutual reaction.
A deposited film is formed on top.

FIG. 2 is a diagram showing the shape of a gas introduction port for introducing activated gas into the film forming space. Here, if the length of the short axis of the plurality of rectangular gas introduction ports 201 to 204 is a, the length of the long axis is b, and the distance between each gas introduction port is C, then a
It has been found that the thickness and film quality distribution of the deposited film to be formed change depending on the ratio of :b:c.

For example, 5iH4 (hereinafter referred to as SiH4) diluted to 10% with H2
4/Hz) and G diluted to 5% with H□ (IH4 (
5iGs (hereinafter referred to as GaH4/Hz) was activated by applying microwaves separately, and hydrogenated amorphous 5iGs (hereinafter referred to as a
-3jGe:H) is deposited, a:b:
Depending on how c is taken, unevenness occurs in the film composition of a-3iGe:H. FIG. 8 shows active species of 5iHa coming from the gas inlets 21O1 and 203, and G from the gas inlets 202 and 204.
The horizontal axis shows the unevenness of the composition ratio of the deposited film when active species of eH are introduced.
BCD corresponds to the positions of gas inlets 201 to 204 in FIG. The vertical axis is a-S i, Ge+-x: H
The composition ratio X is shown.

Here, the unevenness of the film composition will be expressed as ΔX during the variation of X. (However, X was determined by measurement using an XM microanalyzer.) Changes in the composition ratio The medium ΔX was as shown in FIGS. 9 and 10. As is clear from Figures 9 and 1O, the ratio of the length of the long axis to the length of the short axis (b/a) is more than double, and the ratio between each inlet to the length of the short axis (c/a) is By setting the distance ratio to 1 times or less, the variation ΔX of the film composition X of 51gG5+-xlll in the short axis direction was significantly reduced.

Here, when changing b/a in FIG. 9, the length of the long axis was kept constant at 201 and the length of the short axis was changed. Further, when changing b/a, c/a was fixed at 1/2. Also, when changing c/a, a-2,5C
It was kept constant at 1l, b-20esi. 5fHn/
The flow rates of H2 and GeH,/Hz are a-20 cm.

b” 20cm 5iHa/Ht, GeHa/
When both Hz is 800accm and a is changed,
The flow rate was changed in proportion to the change in a. The internal pressure of the film forming chamber is 2Q tm Torr, and the applied microwave power is:
5iHn/H1 side is 800W, GeHa/Hz side is 3
It was set to 00W. Further, the distance between the gas inlet and the substrate was set to 8. Here, the distance between the gas inlet and the substrate is, for example, 16
By increasing a1, it is possible to reduce the variation ΔX in the film composition as shown in the graph of the dashed-dotted line in FIG. Therefore, it is not practical to improve the uniformity of the deposited film by increasing the distance between the gas inlet and the substrate.

In the above example, 5iHa/Hz and GeHa/Hz are activated separately, and the activated gases are mixed and reacted.
This figure shows the relationship between the shape and arrangement of the gas inlet and the uniformity of the deposited film when depositing an a-3iGe:H film. The same results as in the above example were obtained in both cases of forming a deposited film of a single composition and activating a plurality of gases separately.

That is, the ratio of the length of the long axis to the length of the short axis of the rectangular or elliptical gas inlet is preferably 2 times or more, more preferably 4 times or more, and optimally 8 times or more. is desirable, and the ratio of the distance between each gas inlet to the short axis length is preferably 1 or less, more preferably 1
/2 times or less, preferably 1/4 times or less.

By providing the gas inlet in such a shape and arrangement, it has become possible to greatly improve the uniformity of the deposited film. Here, by setting the length of the gas inlet in the long axis direction to a desired value, it is possible to enlarge the formation area of the deposited film to a desired size. Furthermore, by increasing the number of gas inlets installed in parallel in the direction of the minor axis, the area in which the deposited film is formed can be expanded to a desired size.

Therefore, it has become possible to uniformly form a deposited film on a desired area while activating a plurality of film-forming gases separately.

Furthermore, as in the deposited film forming apparatus shown in FIG. 5, which will be described in detail later, by moving the substrate in the direction of the short axis, a deposited film can be continuously formed over a larger area in the direction of the short axis. is possible. Further, by moving the substrate, the uniformity of the film quality in the short axis direction can be further improved.

By activating a plurality of film-forming gases independently using the deposited film forming apparatus of the present invention, the activation rate of the plurality of film-forming gases can be controlled independently, and the film quality or composition ratio of the deposited film can be adjusted. It has become possible to form a uniform deposited film over a large area while maintaining the advantage of being able to perform fine control over a wide range without deteriorating the film quality.

Here, the plurality of film-forming gases used in the deposited film forming apparatus of the present invention are of two or more types, and each of them may be a mixed gas like the film-forming gas described above; The invention is not limited by the type of film-forming gas.

Furthermore, the temporary partitions 105 to 109 forming rectangular or oval gas inlets may or may not be parallel to each other. Further, the material may be SUS, A1, or the like, or a material plated with Ni or the like thereon.

Furthermore, in order to input a large amount of power, the rod-shaped antenna that transmits microwaves must be installed vertically in the waveguide as shown in FIG. 7, and must be insulated from the film-forming chamber by Sing, AfzOs, etc. Furthermore, when increasing the number of gas inlet ports in the short axis direction, a plurality of rod-shaped antennas can be attached to the negative waveguide. In that case, the power distributed to each rod-shaped antenna can be adjusted by adjusting the length of the portion of the rod-shaped antenna that is inserted into the waveguide.

In addition, the reflected waves are transmitted to the terminals 709, 710 and the tuner 707.
．． At step 708, the number is adjusted to be as small as possible.

〔Example〕

EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited by these in any way.

Sutama LfLL FIGS. 3 and 4 show an example of the deposited film forming apparatus of the present invention.

In FIG. 3, 301 to 304 are rod-shaped antennas for microwave transmission, and in FIG.
4, the length 3 from the waveguide of FIG. 4 405 to 407
Microwaves are transmitted to 2 cm rod-shaped antennas 401 to 404 to generate plasma around the rod-shaped antennas as shown in FIG. 3, thereby activating the film-forming gas. Another feature of the apparatus shown in FIG. 3 is that by reciprocating the substrate 307 in the direction of the arrow by the substrate transfer mechanism 305, it is possible to move the substrate 307 not only in the long axis (α-α') direction in FIG.
The point is that a deposited film can be formed over a large area also in the short axis (β-β') direction.

Hereinafter, using the deposited film forming apparatus shown in FIGS. 3 and 4, an amorphous silicon carbide film (hereinafter referred to as a-5iCrH
An example of forming a film (abbreviated as “film”) is shown below.

from the gas inlet pipes 308 and 31), respectively (2 to 1).
50 ice- and Ar were introduced for 300 seconds, and 40 ice-
A 2.45 GHz microwave of 0 W was transmitted to generate plasma in the space defined by the partition plates 312 and 313 and 315 and 316, and generate active species of hydrogen (hereinafter abbreviated as H0). At the same time, from the gas introduction pipe 309, CH,
100 scc of CH
, active species were generated. Furthermore, at the same time, the gas introduction pipe 310
from SiF4 for 150 sec- and Ar for 200 sec-
waveguides 407 to 400 are introduced into the rod-shaped antenna 303.
By transmitting W microwave, Shikiri Fi314 and 315
Plasma was generated in the space between them, and active species of 5IF4 were generated.

And 2c1) x 35cm rectangular gas inlet 317
．． 320 to H” 1cm x 35cm gas inlet 31
8 to the active species of CH4 from the 1.5 cm x 35e* gas inlet 319 to the active species of S i Fa to the film forming space 32.
1 and mixed, reacted with each other at an internal pressure of 8 WTorr, and placed a-3i on a glass-based incense 306 of 30C11×30 heated to 270°C with an infrared lamp 322.
A C:H film was deposited. Here, the substrate 306 is the transfer mechanism 30
5 in the direction of β-β' in FIG.
It was made to reciprocate at a speed of / sec.

As a result of evaluating the film properties, the film thickness was 1.4 μm, and the deposition rate was 23.3 persons/sec σF −1,6X 10−’
Ω-' elm -'σ, = 7.8X10-th Ω-'c
s-', Egopt-2, OeV. In addition, the variations in each characteristic within the substrate plane are determined by the film thickness, log f'p,
log e and both within ±lθ%, Egopt is ±2
Using the deposited film forming apparatus of the present invention, high-quality a-3iC was uniformly deposited over a large area.
:Hllll could be deposited.

In addition, since the production amounts of active species of H", S i Fa, and CH, can be controlled independently, a-3
By changing the composition ratio of the iC:H film, it has become possible to deposit a film with a desired optical band gap at a desired deposition rate without deteriorating the film quality.

In this example, by reciprocating the substrate in the short axis (β-β') direction, not only the long axis (α-α') direction but also
Although the deposited film formation area can also be expanded in the short axis (β-β') direction, the length of the substrate in the long axis (α-α') direction is determined by the length of the rod-shaped antenna that transmits microwaves, and Axis (β−β
The length of the substrate in the direction of ') A large deposited film formation region can be obtained in the direction.

Further, in this embodiment, the formation of a-3iC:HW4 was taken as an example, but it is of course possible to form a deposited film having another composition.

Further, the number of rod-shaped antennas that transmit microwaves is not limited to the number in this embodiment, and a larger number of rod-shaped antennas may be used.

λ1 Group FIG. 5 shows an example of the deposited film forming apparatus of the present invention. Fifth
The method of generating plasma using microwaves in the figure is the same as in FIGS. 3 and 4, but the feature of this embodiment is that the substrate 505, which can be curved, is wound around a roll and continuously rolled from the roll 507. The film is sent out to form a deposited film, and the roll 50
6, the short axis (β-β
') The deposited film can be continuously formed over a large area in the direction.

In the long axis (α-α') direction of Figure 4, the area can be increased by extending the length of the rod-shaped microwave antenna, so a large area can be created in a region of the desired width and length. A deposited film can be formed continuously.

An example of depositing an amorphous silicon germanium film (hereinafter abbreviated as a-3iGe:H film) using the deposited film forming apparatus shown in FIG. 5 will be described below.

■(.) from the gas introduction pipes 508 and 5!1, respectively.

150 secw of Ar and 400 sccm of Ar are introduced, and microwaves of 400 W and 2.45 GHz are transmitted from the waveguide 405 to the bar antennas 501 and 504, respectively, and are separated by the partition plates 512 and 513 and 515 and 516. Plasma was generated in the space where H" was generated. At the same time, GeF diluted to 10% with Ar was introduced from the gas introduction pipe 509.
A of 300 iGe is introduced, a 150 W microwave is transmitted from the waveguide 406 to the antenna 502, a plasma is generated in the space between the partition plates 513 and 514, and the GeF
The active species of a. Furthermore, at the same time, the gas introduction pipe 510
From, 5LFa to 200sce- and Ar to 2005c(
s and 300W from the waveguide 407 to the antenna 503.
microwave was transmitted to generate plasma in the space between the partition plates 514 and 515, and active species of 5tF4 were generated.

And 3cm+X35all rectangular gas inlet port 51
7°520 to Hl 1csX35as gas inlet 5
The active species of GeFs from 1B and the active species of SiF from the 1,5aaX35e@ gas inlet 519 are introduced into the film forming space 521.
were introduced and mixed, and reacted with each other at an internal pressure of 50 mTorr, and an a-5ide:H film was deposited while moving a stainless steel substrate 505 with a width of 30 mm heated to 240° C. with an infrared lamp 523 at a speed of 5 es/sin. did.

Here, as an example of the substrate 505 that can be curved, aluminum, heat-resistant polyester, polyimide, or the like can be used in addition to the above. Under the above conditions a
-3iGe: Hll was deposited on a glass substrate heated to 240° C., and the film properties were evaluated. The results are shown in Table 1, circle 2. Other data are the results when the GeFa flow rate and the microwave power for activating GeFa were varied.

Table 1 shows an example in which the composition of the a-3iGe:H film was changed by independently controlling the activation amount of G e F 4 to create films with different optical band gaps (Egopt). A mixed gas of 5tFn and GeFa is decomposed by plasma. In the conventional deposited film formation method, Egopt
When trying to create a small a-3r(ze:H film),
In many cases, the photoconductivity (e,) decreased, the dark conductivity (σ1) increased, and the film quality deteriorated; however, with the device of the present invention, the activation of G e F 4 can be independently controlled. By this method, films of good quality up to 5iGs films with small Egopt were easily obtained.

In addition, the amount of Ho produced and the amount of active species of 5iFn produced were
By simultaneously changing the production amount of active species of eF a, it was possible to form deposited films with different deposition rates at approximately the same Egopt.

The deposition rate distribution of the a-3iGe:H film deposited here on the substrate was within 3%, the distribution of the composition ratio X of 51gGe+-++ was within 2%, and the distribution of electrical conductivity σ was within 50%. . That is, a uniform a-3iGθ:H film with a width of 30 am and a desired length could be deposited.

As described above, the a-3iGe film could be uniformly formed over a large area using the deposited film forming apparatus shown in FIG. Also,
By independently controlling the production amounts of S + F a active species and G e F 4 active species, high-quality a-3iGe:HIIg with a desired band gap could be easily formed at a desired deposition rate.

In this embodiment, an example of formation with a-3ide: 81)% was shown, but other deposited films having a plurality of compositions may be formed by changing the gas type and the like.

Table 1 (1) Using the apparatus shown in FIG. 5 shown in Example 2, an amorphous silicon film doped with phosphorus (hereinafter Pdoped
a-3t: Abbreviated as H film. ) is described below.

30 Hz from the gas inlet pipes 508 and 51), respectively.
0scc was introduced into the intestine, and a 400W 2.45GHz microwave was transmitted from the waveguide 405 to the antennas 501 and 504, respectively, to generate plasma in the spaces separated by the partition plates 512 and 513 and 515 and 516, and generate Ho. generated. At the same time, 300 sccm+ of S i H4 was introduced from the gas introduction pipe 510, and the waveguide 40 was introduced into the antenna 503.
7, transmit a 300W microwave to the partition plate 5.
Plasma is generated in the space between 14 and 515, and SiH4
active species were generated. Furthermore, at the same time, pHs diluted to 2500 pp- with He was introduced from the gas introduction pipe 509.
A 150 W microwave was transmitted from the waveguide 406 to the antenna 502 to generate plasma in the space between the partition plates 513 and 514 to generate active species of PH2.

The generated active species of Ho, 5iHa, and PHs were introduced into the film forming space 521 through rectangular gas inlets 517 to 520 and mixed, reacted at an internal pressure of 14 mTorr, and heated to 240° C. with an infrared lamp 523. Pdope by moving the stainless steel substrate 505 at a speed of 5 cm/@in.
da-3t: H film was deposited.

Pdoped a-Si:HIIg was deposited on a glass substrate heated to 240°C under exactly the same conditions as above,
As a result of evaluating the film properties, the average thickness of III was 1.6 μm, the average deposition rate was 17.8 people/sea, and σj −4,4X
10-”Ω-100 million-g, 1.3X10-”Ω-1)1
, activation energy ΔE=0.08eV, Eg09L−
It was 1,76 eV.

In addition, the distribution of each characteristic within the substrate plane is within ±5% for film thickness, σ2
．． The uniformity was good with σ6 within ±15%.

As described above, a uniform and high-quality Pdoped a-Si:H film could be deposited over a large area using the deposited film forming apparatus shown in FIG.

In addition, since the production amount of 5rHa active species and the production amount of PH3 active species can be controlled independently, Pdoped a
-3t: The concentration of phosphorus in the H film could be reproducibly determined as desired.

Furthermore, the production amounts of Ho and 5iHa active species can be controlled independently! Therefore, it is easy to change the film quality as desired from an amorphous silicon film to a microcrystalline silicon film. In addition, the deposition rate could be controlled as desired without deteriorating the film quality. Here Pdoped
a-3i: Although the example of Hll has been given, it is also possible to form a deposited film having a similar composition, such as a p-type amorphous silicon film doped with boron.

Furthermore, in the above examples, examples of deposited films doped with alloys or impurities were shown, but of course deposited films of a single composition such as amorphous silicon can also be easily formed over a large area with good uniformity. .

(Effects of the Invention) The deposited film forming apparatus of the present invention activates a plurality of film-forming raw material gases by discharging them around separate rod-shaped antennas through the action of microwaves. transport the activated film-forming raw material gas in the vertical direction,
The gas is rectangular or oval in shape, and the length of the major axis is more than twice the length of the minor axis, and is introduced into the deposition space through multiple gas inlet ports installed in parallel and close to each other at a distance less than the length of the minor axis. By mixing the activated film-forming raw material gases and causing them to react with each other, it is possible to maintain the advantage of activating multiple film-forming raw material gases independently, while also achieving uniform film quality over a large area. It became possible to form a deposited film of

That is, by independently activating a plurality of film-forming raw material gases, the activation rate of each film-forming raw material gas can be independently increased to 1) 1.
)? In the case of a deposited film composed of multiple compositional components, it is possible to finely control the quality of the deposited film formed by controlling the production amount and reaction of each active species, and the ratio of the compositional components. While maintaining the advantage of being able to expand the selectivity of raw material gas and expand the range of film formation conditions,
Furthermore, by transmitting microwaves to multiple rod-shaped antennas and discharging the film-forming material gas around them, it is possible to uniformly activate the film-forming gas over a wide range while inputting large amounts of power. , Furthermore, the gas inlet has a rectangular or elliptical shape, the length of the major axis is more than twice the length of the minor axis, and the gas inlets are installed close to each other in parallel at a distance less than the length of the minor axis. By introducing each activated film-forming gas into the film-forming space and causing a reaction, it has become possible to form a deposited film of uniform quality over a large area at low cost.

Furthermore, by moving the substrate in the short axis direction, it has become possible to form a uniformly modified deposited film over a large area with a wide width and desired length.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view in the short axis direction of a basic example of the deposited film forming apparatus of the present invention. FIG. 2 is a diagram showing the shape of the gas inlet of the deposited film forming apparatus of the present invention. FIG. 3 is a cross-sectional view in the short axis direction of an example of the deposited film forming apparatus of the present invention. FIG. 4 is an explanatory diagram of the interior of an example of the deposited film forming apparatus of the present invention. FIG. 5 is a cross-sectional view in the short axis direction of an example of the deposited film forming apparatus of the present invention. FIG. 6 is a schematic diagram of an example of a conventional deposited film forming apparatus. FIG. 7 is an explanatory view of the deposited film forming apparatus shown in FIG. 1, viewed from above. FIG. 8 is a graph of the composition ratio distribution corresponding to the position of the gas inlet in FIG. 2 of a deposited film formed by the deposited film forming apparatus of the present invention. FIG. 9 is a graph showing the relationship between changes in the composition ratio of the deposited film formed by the deposited film forming apparatus of the present invention and the shape of the gas inlet. FIG. 10 is a graph showing the relationship between changes in the composition ratio of a deposited film formed by the deposited film forming apparatus of the present invention and the arrangement of gas introduction ports. In Figures 1 and 2, 101-104... Rod antenna for microwave transmission, 105-109... Partition plate, 1) 0-1) 3... Gas introduction pipe, 1) 4-1 )7
...Gas inlet, 1)8... Film forming space, 1)9...
- Substrate, 120... Substrate holder, 121... Heater for heating the substrate, 122... Gas exhaust port, 123...
- Substrate transfer port, 201-204... gas introduction port. In FIG. 3, 301-304... Rod-shaped antenna for microwave transmission, 305... Substrate transfer mechanism, 306...
...Substrate, 307...Substrate holder, 308-31)
... Gas introduction pipe, 312-316 ... Partition plate, 3
17-320... Gas inlet, 321... Film forming space, 322... Infrared lamp, 323.324... Gate valve substrate transfer port, 325... Gas exhaust port. 4th. 5. 6. In Figure 7, 401 to 404・
... Rod-shaped antenna for microwave transmission, 405-407.
...Waveguide, 408...Deposition chamber 409...
Substrate transfer port, 41O... gas exhaust port, 501-504
. . . Rod-shaped antenna for microwave transmission, 505 . . . Substrate, 506 . . . Substrate take-up roller 507 . Board, 517-520...
・Gas outlet, 521... Film formation space 1 Sakai, 522...
Gas exhaust port, 523... Infrared lamp, 524...
Substrate roll unloading chamber, 525... Substrate roll loading chamber, 5
26...Substrate cooling chamber, 527...Substrate preheating chamber,
601-603...Active species introduction nozzle, 604...
Film forming space, 605... Film forming chamber 606... Substrate, 607... Susceptor, 608... Gas exhaust port, 701-704... Rod-shaped antenna for microwave transmission, 705, 706... Waveguide, 707°708...
3 stub tube, 709, 710... plunger, 71), 712... microwave power supply, 713...
Deposition chamber

Claims (2)

[Claims] (1) Activate two or more types of film-forming raw material gases through decomposition energy in separate activation spaces, and deposit the activated gases through separate gas inlets. A deposited film forming apparatus in which gases introduced into a space and mixed together and activated near the surface of a substrate installed in the film forming space react with each other to form a deposited film on the substrate. Each of the plurality of activation spaces is equipped with a rod-shaped microwave transmission antenna, and the microwaves transmitted to the rod-shaped antenna activate each of the film-forming raw material gases into a plasma state around the rod-shaped antenna. Each of the activated and activated gases is transported in a direction perpendicular to the long axis direction of the rod-shaped antenna, and each of the gas inlets is arranged so that the length of the long axis with respect to the short axis is at least 2 1. A deposited film forming apparatus characterized in that the device has a rectangular or elliptical shape, and the plurality of gas inlets are arranged in parallel and close to each other at a distance less than or equal to the length of the minor axis. (2) The deposited film forming apparatus according to claim (1), further comprising means for moving the base body in a direction perpendicular to the long axis direction of the rectangular or oval gas inlet.