JP2000096239A - Induction coupling type plasma cvd method and induction coupling type plasma cvd device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an induction coupling type plasma CVD method capable of forming a uniform silicon thin film of high quality good in the transfer of high frequency, capable of generating induction coupling type plasma by low pressure, free from the generation of gas mist (powder) and small in defects in a short time and to provide an induction coupling type plasma CVD device therefor. SOLUTION: By feeding the inside of a reaction chamber 12 held to a vacuum state with source gas and moreover applying high frequency electric power by a high frequency applying coil 18 arranged in the reaction chamber to generate source gas induction coupling type plasma, a vapor-deposited film is formed on the surface of a base material arranged so as to be confronted with the high frequency applying coil in the reaction chamber. Thereby, the phenomenon that the vapor-depositing film is formed on the place other than the surface of the base material and is peeled to adhere on the surface of the base material is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for forming a uniform and high-quality thin film on the surface of a substrate, and more particularly to a method of forming a substrate using an inductively coupled plasma enhanced chemical vapor deposition (CVD) method. The present invention relates to a method and an apparatus for forming a uniform and high quality thin film on a surface.

[0002]

2. Description of the Related Art Conventionally, thin films of amorphous silicon, fine grain silicon, silicon oxide, silicon nitride, etc.
It is widely used for semiconductor elements such as thin film transistors, photoelectric conversion elements, and the like. In particular, among these, amorphous silicon has excellent electrical properties such as high photoconductivity and low dark conductivity, and is also highly durable, so that it is used for photoelectric conversion elements such as solar power generation. I have.

As a general method for forming such an amorphous silicon thin film, a chemical vapor deposition (CVD) method, for example, a high-frequency plasma CVD method, an optical CVD method, an electron cyclotron resonance (ECR) method, There is a thermal CVD method or the like.

Among these methods, a high-frequency plasma CVD method, which is a type of capacitively coupled plasma, suppresses the generation of structural defects such as dangling bonds (unbonded hands) and reduces the three-dimensional silicon network structure. It has been widely used because it can be formed efficiently.

According to this method, a raw material gas such as monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is introduced into a vacuum reaction chamber while being accompanied by a hydrogen gas for dilution.
A high-frequency electric power is applied between electrodes arranged opposite to each other in a vacuum reaction chamber to generate a high-frequency electric field, in which electrons collide with neutral molecules of a raw material gas to form a high-frequency plasma. In this method, a raw material gas is decomposed to form a silicon thin film on the surface of a substrate provided on one electrode.

However, this high-frequency plasma CVD
According to the method, a relatively high quality film is easily obtained because the plasma density is low, for example, 10 ⁹ cm ⁻³ or less, and the silicon thin film formation speed is low. However, since a high gas pressure is required, a secondary reaction in the gas phase generates a polymer-like decomposition product, or a discharge in the reaction chamber causes contamination by substances adhering to the chamber wall, or contamination of the electrode. There is a possibility that the quality of the thin film may be deteriorated due to contamination by the adhered substance.

For this reason, recently, capacitively coupled plasma
Instead of inductively coupled plasma using inductively coupled plasma
The plasma CVD method has been used. This invitation
The inductively coupled plasma method uses high-frequency coils (antennas).
Frequency power to generate inductively coupled plasma
On the substrate placed facing the high-frequency coil.
This is a method for forming a thin film. This inductively coupled plasm
In the Ma method, for example, 10 ^Ten-10¹²cm^-3High degree
Plasma density can be obtained, and the
Effective radical species (SiH_ThreeRadicals)
Is possible, and ions that adversely affect the thin film
Low generation, for example, 0.1 to 20 mTorr
The reaction can be performed at low pressure
You.

In addition, unlike the conventional capacitively coupled plasma CVD apparatus, this inductively coupled plasma CVD apparatus does not require the use of a counter electrode, and thus has a high degree of freedom in the space inside the apparatus. For this reason, for example, it is possible to increase the effective utilization rate of the reaction gas by installing a reaction gas supply nozzle facing the substrate stage.

As a method using such an inductively coupled plasma method, as disclosed in Japanese Patent Application Laid-Open No. Hei 10-27762, a spiral high-frequency coil 202 is arranged outside the upper part of a reaction chamber 200, and the surface thereof is formed. A dielectric window 204 made of quartz, on which a silicon film containing no oxygen is deposited, is formed in the upper portion of the reaction chamber, and a ring-shaped gas supply nozzle 20 is formed between the dielectric window and the substrate 206.
8 is disclosed (see FIG. 9).

[0010]

In such an inductively coupled plasma CVD apparatus, a high-frequency coil is provided outside the reaction chamber to induce a high frequency through a dielectric window. The pressure is, for example, 7 × 10
^Since high frequencies cannot be induced unless the pressure is relatively high at ^-2 Torr, gas mist (powder) is likely to be generated in the plasma, and as a result, impurities are mixed into the silicon thin film on the surface of the base material, resulting in a uniform and defective defect. It was not enough to form few high-quality silicon thin films.

In this case, since a high-frequency coil is provided outside the reaction chamber to induce high-frequency waves through the dielectric window, the transmission of high-frequency waves is not good, and the speed of deposition on the surface of the base material is low. But the production efficiency was not good.

For this reason, "Low Temperature Growth of
Amorphous and Polycrystalline Silicon Films from a
Modified Inductively Coupled Plasma, M. Goto, etc.
Jpn.J. Appl. Phys. Vol. 36 (1997), pp. 3714-3720 discloses that a high-frequency coil (RF antenna) is provided inside a reaction chamber in an inductively coupled plasma CVD method to reduce a reaction pressure. , Inductively coupled plasma CVD of internal excitation type capable of generating stable plasma at low voltage
A device has been proposed.

However, inductively coupled plasma CVD
Since the method originally has the feature that the film forming speed is fast,
When this method is used, particularly when the high-frequency coil is arranged in the reaction chamber, in addition to the substrate surface, the reaction chamber inner wall, arranged in the reaction chamber above the substrate, for example, a gas supply nozzle or the like Although a silicon thin film is gradually formed on the surface of the member, the formation speed is also increased. Therefore, the silicon thin film formed on the surface of these members peels off and falls on the surface of the base material, which becomes an impurity, which leads to a decrease in the quality of the silicon thin film formed on the surface of the base material.

Further, such an inductively coupled plasma CV
Effective radical species (SiH ₃ radical) also in Method D
And the generation of ions that adversely affect the thin film is relatively small. However, in thin film transistors and the like that require high quality, deterioration of the quality of the thin film due to the influence of these ions is still a problem.

In view of such circumstances, the present invention is capable of generating high frequency transmission of inductively coupled plasma at a low pressure, and generating no gas mist (powder) in the plasma. It is possible to form a high quality silicon thin film with few defects in a short time, and to peel off the silicon thin film formed on the surface of a member such as a gas supply nozzle placed in a reaction chamber above the substrate. It is an object of the present invention to provide an inductively coupled plasma CVD method and an inductively coupled plasma CVD apparatus that do not cause deterioration in the quality of a silicon thin film formed on a substrate surface due to dropping.

Another object of the present invention is to provide an inductively coupled plasma CVD method and an inductively coupled plasma CVD apparatus that can freely cope with an increase in the size of a semiconductor wafer or the like.

Further, the present invention selectively captures ions and the like which have an adverse effect on the thin film to form effective radical species (Si
An inductively coupled plasma CVD method and an inductively coupled plasma CVD apparatus capable of improving the quality of a silicon thin film formed on the substrate surface by allowing only H ₃ radicals) to reach the substrate surface. The purpose is to provide.

The present inventors have conducted intensive studies in view of such circumstances and objects. As a result, in such an internal excitation type inductively coupled plasma CVD method, the gas introduction nozzle was integrated with the high frequency application coil. By reducing the formation of the silicon thin film in the reaction chamber other than the substrate surface, it is possible to prevent the quality deterioration of the silicon thin film on the substrate surface due to the peeling of the silicon thin film. The densification of the silicon thin film formed on the application coil makes it difficult for the silicon thin film to be peeled off, thereby preventing deterioration of the quality of the silicon thin film on the substrate surface due to the peeling of the silicon thin film. A mesh metal plate or metal mesh electrode between By the above, even when the silicon thin film formed on the surface of a member such as a gas supply nozzle disposed in the reaction chamber above the base material is peeled and dropped, the silicon thin film is captured by these mesh metal plates or metal mesh electrodes, and By preventing the detached silicon thin film from adhering to the top, it is possible to prevent the deterioration of the quality of the silicon thin film on the substrate surface due to the detachment of the silicon thin film. .

[0019]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above-mentioned objects and objects, and an inductively coupled plasma CVD method according to the present invention provides a reaction chamber maintained in a vacuum state. A reaction gas is supplied into the reaction chamber, and a high-frequency power is applied by a high-frequency application coil disposed in the reaction chamber, thereby generating a reaction gas inductively coupled plasma so as to face the high-frequency application coil in the reaction chamber. In the inductively-coupled plasma CVD method of forming a vapor deposition film on the surface of the substrate arranged in, when forming the vapor deposition film on the surface of the substrate, the vapor deposition film is formed in a place other than the surface of the substrate, It is characterized in that the deposited film is prevented from peeling off and adhering to the substrate surface.

As described above, when forming a vapor-deposited film on the surface of the substrate, the vapor-deposited film is formed at a place other than the surface of the substrate, and the vapor-deposited film is prevented from peeling off and adhering to the surface of the substrate. So
It is possible to prevent deterioration of the quality of the silicon thin film on the substrate surface due to peeling of the silicon thin film, and to obtain a high-quality silicon thin film.

Further, by applying a high-frequency power by a high-frequency application coil disposed in the reaction chamber,
The high-frequency coil directly guides high-frequency waves into the reaction chamber. As a result, the efficiency of inductively coupled plasma generated together with the reaction gas supplied into the reaction chamber is improved, and the reaction pressure of the reaction gas can be reduced. .

[0022] Therefore, the gas mist (powder) is less likely to occur in the plasma, without impurities are mixed into the silicon thin film, a uniform, it is possible to form a high-quality silicon thin film with few defects, electron density 10 ¹⁰ - 10 ¹²
Since it is as high as about cm ^-3 , the decomposition rate of the raw material gas is improved, the deposition rate on the substrate surface is increased, and the production efficiency is improved.

Moreover, just by changing the size of the coil,
Since it is possible to cope with the dimensions of the base material, it is possible to reduce equipment costs and reduce costs. Also,
The present invention is characterized in that a reactive gas supply passage is provided inside the high frequency applying coil, and a reactive gas is supplied from a reactive gas supply port formed in the high frequency applying coil to perform vapor deposition.

With such a configuration, the number of locations where unnecessary silicon thin films are formed is reduced as compared with the conventional case where a separate reaction gas supply nozzle is provided. Impurity contamination is reduced, and a uniform and high-quality silicon thin film can be formed on the substrate surface.

Further, the present invention is characterized in that the vapor deposition is performed while controlling the temperature of the high frequency application coil. This temperature control device is preferably a heat medium temperature control device that controls the temperature by flowing a heat medium such as silicon oil through a heat medium passage formed in the high-frequency application coil because it is easy to control the temperature.

Thus, for example, when the coil is heated, an unnecessary silicon thin film formed on the surface of the high-frequency application coil becomes a dense film, is hardly peeled off from the surface of the high-frequency application coil, and is uniform, uniform and of high quality. It is possible to form a simple silicon thin film on the substrate surface.

Further, in the present invention, a mesh metal plate or a metal mesh electrode is interposed between the high-frequency applying coil and the base material, and is provided on a surface of the base material arranged in the reaction chamber so as to face the high-frequency applying coil. The method is characterized in that a deposited film is formed on the substrate.

Accordingly, even when the silicon thin film formed on the surface of a member such as a gas supply nozzle disposed in the reaction chamber above the inner wall of the reaction chamber or the base material is peeled off and dropped, these mesh metal plates can be used. Alternatively, it is possible to prevent the quality of the silicon thin film on the substrate surface from deteriorating due to the peeling of the silicon thin film by preventing the peeled silicon thin film from being attached to the substrate captured by the metal mesh electrode. A high-quality silicon thin film can be formed on the surface of the base material.

In this case, by using a metal mesh electrode, a neutral radical (Si), which is a decomposition product generated from SiH ₄ gas existing above the metal mesh electrode, is formed.
Since only H ₃ radicals diffuse over a long distance and pass through the metal mesh electrode, only the effective radical species (SiH ₃ radicals) reach the substrate surface and contribute to the film growth. It is possible to form a uniform and uniform silicon thin film.

In addition, with this metal mesh electrode, ions existing in the plasma can be prevented from reaching the surface of the substrate, so that the impact on the substrate surface thin film due to ion bombardment can be prevented, and high quality can be achieved. Thus, a uniform silicon thin film can be formed.

In the present invention, the reaction gas is a silicon-based gas, the deposited film is a silicon thin film, and preferably, the reaction gas is SiH _x Cl _4-x (where X is 0 to 3).
, And more preferably dichlorosilane.

As described above, by using a silane gas containing chloro, it is possible to form a silicon thin film having high light stability such as light-resistance deterioration characteristics and long-term photoelectric characteristics.

Further, in the present invention, the pressure in the reaction chamber is preferably from 0.3 mTorr to 100 mTorr.
rr pressure, more preferably 5 mTorr to 30 mT
Desirably, the pressure is orr.

By controlling to such a pressure,
Gas mist (powder) hardly occurs in plasma,
No impurities are mixed into the silicon thin film,
A high quality silicon thin film with few defects can be formed. When a metal mesh electrode is used, if the reaction pressure is too low, the straightness of radical species becomes too high, and a mottled pattern corresponding to the mesh shape is formed on the surface of the silicon film, and the deposited film becomes heterogeneous. By setting the pressure in the reaction chamber within the range described above, it is possible to prevent such heterogeneity of the deposited film.

Further, according to the present invention, an umbrella-shaped reflecting member is provided around the high-frequency applying coil to guide the reaction gas and the plasma-excited reaction gas decomposition product toward the substrate. And

By providing the reflecting member in this manner, the generated plasma can be guided toward the substrate, so that the plasma can be used effectively and the time for forming a thin film can be shortened.

Further, in the present invention, a rectifying plate member for guiding a reaction gas and a plasma-excited reaction gas decomposition product in the direction of the substrate is provided around the substrate installation portion. .

According to this structure, the flow of the reaction gas becomes uniform downward toward the base material, so that the thin film segregates in the direction of the flow of the reaction gas as in the case where there is no current plate. And a homogeneous thin film can be formed on the surface of the substrate.

[0039]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments (examples) of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing a first embodiment of an inductively coupled plasma CVD apparatus for performing the inductively coupled plasma CVD method of the present invention.

As shown in FIG. 1, an inductively coupled plasma CVD apparatus (hereinafter, simply referred to as "CVD apparatus") 10
Is provided with a cylindrical reaction chamber 12 made of, for example, stainless steel such as SUS304 and maintained in a vacuum state, and is evacuated through an exhaust port 13 formed in a bottom wall 16 of the reaction chamber 12. By connecting to a vacuum source such as a pump, a constant vacuum state is maintained.

Further, a stage 14 constituting a base material setting portion for setting a base material A on which a silicon thin film is vapor-deposited on the surface is disposed therein. The stage 14 penetrates the bottom wall 16 of the reaction chamber 12 and is configured to be slidable up and down by a drive mechanism (not shown) so that the position can be adjusted. Thereby, the base material A can be heated. Although not shown, a seal member such as a seal ring is provided in a sliding portion between the stage 14 and the bottom wall 16 to secure a degree of vacuum in the reaction chamber 12.

On the other hand, a ring-shaped high-frequency application coil 18 is provided above the reaction chamber 12, and its base end portions 20 and 22 pass through the top wall of the reaction chamber 12, and are outside the reaction chamber 12. Is connected to a high-frequency power supply 24 provided in the power supply. This high frequency applying coil 18
A matching circuit (not shown) is provided between the high frequency power supply 24 and the high frequency power supply 24 so that the high frequency generated by the high frequency power supply 24 can be propagated to the high frequency application coil 18 without loss.

As shown in FIG. 2, the high-frequency application coil 18 has a hollow structure with a circular cross section.
A heat medium passage 28 is formed at an upper portion of the heat medium passage 28 through which a heat medium such as silicon oil flows from a heat medium source 30 so that the temperature of the high-frequency application coil 18 is reduced. It can be controlled.

The high frequency applying coil 18 has a partition 2
A reaction gas supply path 32 is formed below and separated from the reaction gas 6, and a source gas such as, for example, monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is directly supplied from the reaction gas supply source 27 or The reaction gas is mixed with a diluting gas such as hydrogen, helium, argon, or xenon, and is formed at a lower end of the high-frequency application coil 18 through the reaction gas supply path 32 at a constant distance along the ring shape. The reaction gas is supplied from the gas supply port 34 into the reaction chamber 12. Thus, an inductively coupled plasma is generated by the high frequency applied to the high frequency application coil 18 to deposit and form a silicon thin film on the substrate surface.

As described above, by forming the reaction gas supply path 32 inside the high frequency application coil 18, an unnecessary silicon thin film is unnecessary as compared with a conventional case where a reaction gas supply nozzle is separately provided. Since the number of places where the silicon thin film is formed is reduced, impurity contamination due to the silicon thin film which has been peeled off is reduced, and a uniform and high quality silicon thin film can be formed on the surface of the base material.

The material of the high-frequency coil 18 may be selected from metals, for example, easily workable materials such as stainless steel such as SUS304, copper, and aluminum, and is not particularly limited. The surface of the high-frequency coil 18 may be covered with an insulator such as alumina or aluminum nitride.

As shown in the cross-sectional view of FIG. 3, the high-frequency coil 18 has a structure in which a heating medium passage 28 having a circular cross section and a reactant gas supply passage 32 are vertically overlapped and integrated. By doing so, manufacture becomes easier.

In this embodiment, the temperature of the high-frequency coil can be controlled by circulating the heat medium in the heat medium passage 28 formed inside the high-frequency coil 18. When heating
Other heating means, such as a sheathed heater,
By burying the high-frequency coil inside the coil, it is of course possible to heat the high-frequency coil.

On the other hand, as shown in FIG. 4, a substantially umbrella-shaped reflecting member 36 is provided above the periphery of the high-frequency applying coil 18 so that the reaction gas and the plasma-excited reaction gas decomposition products can be removed. Of these, those that diffuse to the surroundings and deviate from the direction of the base material are reflected and guided in a downward direction, that is, in the direction of the base material. Therefore, the reaction gas can be effectively used, and the time for forming the thin film is shortened. The reflecting member 36 is preferably made of metal, for example, stainless steel such as SUS304. Also, not all of the plasma is reflected on the reflecting member 36, but a silicon thin film is gradually formed on the surface of the reflecting member 36. Therefore, the silicon thin film is removed from the reaction chamber 12, and the deposited silicon thin film is etched by etching or the like. By washing, it can be replaced with a clean reflecting member. By doing so, the adhesion of the film to the inner wall of the reaction chamber can be significantly reduced, and the frequency of cleaning the reaction chamber can be reduced.

Further, the base member installation part, that is, the stage 1
A funnel-shaped rectifying plate member 38 that guides the reaction gas and the decomposition product of the reaction gas excited by the plasma in the direction of the base material A placed on the stage 14 is also provided around the periphery 4. The current plate member 38 is also made of the same material as that of the reflection member 36, and is configured to be removable to remove a silicon thin film deposited on the surface thereof. I can do it.

Further, on the side of the reaction chamber 12,
There is a gate valve 42, through which it is connected to a pressure regulating chamber 40 for taking in and out the substrate A to be treated.

Inductively coupled plasma CVD using the inductively coupled plasma CVD apparatus of the present invention configured as described above.
The method will be described below. First, the inside of the reaction chamber 12 is maintained in a vacuum state by operating a vacuum source such as a vacuum pump to exhaust the gas through the exhaust port 13. By setting the inside of the reaction chamber 12 to a high vacuum, oxygen, carbon, nitrogen, and the like which are impurity elements of the silicon film can be removed. The pressure at this time is 1 × 1
It is preferable that the pressure be 0 ^-6 Torr or less.

Next, after a substrate A to be processed, for example, a glass substrate, a metal substrate, etc., to be processed is loaded into the pressure adjustment chamber 40 connected to the side of the reaction chamber 12, Is adjusted to be the same degree of vacuum as the pressure in the reaction chamber 12. Then, the gate valve 42 is opened, and the substrate A is placed on the stage 14 in the reaction chamber 12.

The high frequency power supply 24 provided outside the reaction chamber 12 applies high frequency to the high frequency application coil 18, and the reaction gas supply source 27 supplies the high frequency application coil 18 with the reaction gas supply path 32 formed in the high frequency application coil 18. The reaction gas is supplied from the reaction gas supply port 34 into the reaction chamber 12 through the reaction gas supply port 34. Thus, an inductively coupled plasma is generated by the high frequency applied to the high frequency application coil 18, and a silicon thin film is deposited and formed on the surface of the substrate A mounted on the stage 14.

The pressure (reaction pressure) in the reaction chamber 12 at this time is preferably 0.3 to 100 mTorr.
r, more preferably 5 to 30 mTorr. By controlling to such a pressure, generation of gas mist (powder) in plasma can be prevented, and a uniform, high-quality silicon thin film with few defects can be formed.

At this time, the high-frequency application coil 18 is heated by flowing a heat medium from the heat medium source 30 through the heat medium passage 28 formed in the high-frequency application coil 18. As the heating temperature, the high-frequency application coil 18
Preferably, the temperature is set to 150 to 300 ° C., more preferably 200 to 250 ° C., so that an unnecessary silicon thin film formed on the surface becomes a dense film and is hardly peeled off from the high frequency application coil surface. This makes it possible to form a uniform, uniform and high-quality silicon thin film on the surface of the base material. In this case, as the heat medium,
For example, silicon oil can be used, but other heat medium such as steam may be used, and there is no particular limitation.

In this case, the high frequency power is 10 W to
It is 3 KW, and the frequency of the high frequency is preferably 5 MHz to 200 MHz, more preferably 10 MHz, in consideration of adjustment by a matching circuit.
It is desirable to set it to １００100 MHz.

The reaction gas introduced into the reaction chamber 12 is, for example, monosilane (SiH ₄ ), disilane (Si ₂ H ₆ ) or the like, or hydrogen, argon, helium, neon, xenon or the like. A reaction gas accompanied by a diluting gas such as the above can be used. Furthermore, S
The use of chloro-containing silane gas represented by iH _x Cl _4-x (where X is an integer of 0 to 3) together with hydrogen gas for dilution and as a reaction gas can be used as a reaction gas. It is desirable because it is possible to form a silicon thin film having high light stability such as light resistance and long-term photoelectric characteristics. In particular, since dichlorosilane (SiH ₂ Cl ₂ ) has a boiling point of about 10 ° C. and is easy to handle, it is preferable to use chlorosilane-containing silane gas.

The introduction amounts of the reaction gas and the dilution gas are as follows.
Although the case where the reaction gas is introduced into the reaction chamber alone and the case where the reaction gas is introduced into the reaction chamber together with the diluting gas are different, the total amount is considered in consideration of the introduction amount at which a deposition rate of 20 Å / sec or more is obtained. It is preferable that the introduction amount is 30 cc / min to 3000 cc / min. The mixing ratio between the reaction gas and the diluent gas is not particularly limited. However, when the flow ratio of the diluent gas to the reaction gas (diluent gas / reactant gas) exceeds 10, the structure of the silicon film changes. . When the flow ratio of the dilution gas is smaller than 10, the deposition of amorphous silicon is dominant, and when it is 10 or more, the deposition of a crystalline silicon film is dominant. However, since the structural change of the silicon film is greatly related to other deposition conditions, that is, high-frequency power, substrate temperature, and the like, it is difficult to uniquely define only the flow rate ratio. In general,
The higher the high-frequency power, the higher the dilution ratio, and the higher the substrate temperature, the more the deposition of the crystalline silicon thin film becomes dominant.

The distance L between the base material A and the high-frequency coil 18 is set to SiH which is considered to be a main deposition precursor.
₃ Considering the lifetime of neutral radicals, 8 cm to 30 cm
The position may be adjusted by sliding the stage 14 up and down.

Further, the substrate A is heated to about 200 to about 250 ° C. by a heating device provided on the stage 14 so that a high-quality silicon thin film is easily deposited. By doing so, the high-frequency application coil 1
A silicon thin film is deposited and formed on the surface of the substrate A mounted on the stage 14 by the inductively-coupled plasma generated by the high frequency applied to the stage 8. Since the plasma is guided in the direction A, the plasma can be effectively used, and the time for forming the thin film is reduced.

The time for forming the thin film depends on the use of the base material.
100 to 100 to 8000 angstroms
The reaction may be performed for about 400 seconds.

FIG. 5 shows an inductively coupled plasma CV of the present invention.
FIG. 5 is a schematic view showing a second embodiment of the inductively coupled plasma CVD apparatus for performing the method D. CV of this embodiment
The D apparatus is basically the same as the CVD apparatus of the first embodiment described above.
The configuration is the same as that of the device, and the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

In the CVD apparatus 10 of this embodiment, the space between the high-frequency application coil 18 and the base material A, that is, the stage 1
4, a circular plate-shaped metal mesh electrode 50 penetrating the side wall 17 of the reaction chamber 12 and connected to the DC power supply 52 is provided.

By providing the metal mesh electrode 50 in this manner, only the long-lived SiH ₃ radical among the reaction gas decomposition products generated in the plasma existing above the metal mesh electrode 50 diffuses over a long distance. As a result, only the effective radical species (SiH ₃ radicals) reach the surface of the base material A and contribute to the film growth because they pass through the metal mesh electrode 50, so that a high-quality and uniform silicon thin film is formed. It is possible to

Moreover, in this metal mesh electrode 50,
Since ions present in the plasma can be prevented from reaching the substrate surface, the influence of ion bombardment on the substrate surface thin film can be prevented, and a high-quality, uniform silicon thin film with few defects can be formed. It is possible. further,
In the case where chloro-containing silane gas is used as a reaction gas, the concentration of chloro atoms present in the silicon film can be controlled by the voltage applied to the mesh electrode.

Further, by using the metal mesh electrode 50 to generate hydrogen plasma under a reverse bias, the silicon film adhered to the metal mesh electrode 50 can be removed without opening the reaction chamber 12. Becomes possible.

The material of the metal mesh electrode 50 is not particularly limited as long as it is a metal. For example, a metal such as SUS304 is generally used, but a metal such as tungsten or tantalum can also be used. Further, the mesh size of the metal mesh electrode 50 may be a mesh size of # 5 to 50 in consideration of the above operation and the homogeneity of the silicon thin film formed on the surface of the base material A.

Further, the voltage applied to the metal mesh electrode 50 is desirably -200 V to +200 V in consideration of the formation of new plasma near the mesh. However, in this case, the + side indicates the target film formation,
The side indicates the voltage at the time of film removal.

Further, the position of the metal mesh electrode 50 is determined by considering the suppression of the sputtering phenomenon of the mesh electrode due to the inductively coupled plasma.
8 between 3 and 10 cm, metal mesh electrode 50
It is desirable that the distance between the substrate and the substrate A be 5 to 20 cm.

At this time, the pressure in the reaction chamber 12 is preferably 0.3 to 100 mTorr.
More preferably, the pressure is 5 to 30 mTorr. That is, when the metal mesh electrode 50 is used, if the reaction pressure is too low, the straightness of the radical species becomes too high, and a mottled pattern corresponding to the mesh shape is formed on the surface of the silicon film. However, by setting the pressure in the reaction chamber 12 within the range described above, it is possible to prevent such non-uniformity of the deposited film.

In order to prevent a non-uniform thin film having a mottled pattern corresponding to the mesh shape from being formed on the surface of the base material A, the metal mesh electrode 50 itself is subjected to ultrasonic vibration or the like. May be.

Further, in this embodiment, the metal mesh electrode 50 is used. However, in order to capture and prevent the silicon thin film attached to the inner wall of the reaction vessel from peeling off and falling on the surface of the substrate A. May be a metal mesh plate.

FIG. 6 shows an inductively coupled plasma CV of the present invention.
FIG. 7 is an overall schematic view showing a third embodiment of an inductively coupled plasma CVD apparatus capable of operating continuously for carrying out the method D.
FIG. 8 is a partially enlarged view of FIG. 8, and FIG.
It is sectional drawing in the VIII line.

This apparatus is a so-called “roll-to-roll type” CVD apparatus which can be operated continuously. This CVD apparatus is an apparatus for continuously treating a base material B formed in a belt shape. As shown in FIG. 6, the base material B is formed continuously from a feeding chamber 101. A plurality of CVD processing chambers 102 to 106
, And is wound in the winding chamber 107. Note that a gate device 109 is provided between each chamber.

The base material B wound in a roll shape on the pay-out roller 110 provided in the pay-out chamber 101 is peeled off the protective film C on the surface thereof by the protective film take-up roller 111, and then guided by the guide roller. While being guided to 112 and passing through the CVD processing chambers 102 to 106 via the respective gate devices 109, a silicon thin film is formed on the surface thereof. Then, take-up chamber 1
A new protective film D is guided by a guide roller 113 in the sheet No. 07 from the protective film feeding roller 114 and is brought into contact with the thin film forming surface, and is taken up by a take-up roller 115.

At this time, the feeding chamber 101 and the CVD
The inside of the processing chambers 102 to 106 and the inside of the winding chamber 107 are maintained in a constant vacuum state by an exhaust means. In addition, a hydrogen gas and other inert gases are supplied to the gate device 109 through the gate gas supply path 116 in order to maintain the independence of thin film forming conditions such as a reaction gas in each CVD device. ing.

Further, as shown in FIG.
09, a guide roller 117 composed of a magnet roller is disposed in the CVD processing chambers 102 to 106 so as to guide the base material B.

As shown in FIGS. 7 and 8, a high-frequency furnace 118 is formed below the CVD processing chambers 102 to 106, and a high-frequency coil 120 connected to a high-frequency power supply 119 is formed in the lower end thereof. Is provided. The configuration of the high-frequency coil 120 is the same as that of the first embodiment described above. Although not shown, a heating medium passage connected to a heating medium source and a reaction medium connected to a reaction gas source are provided therein. A gas supply path and a gas supply port are formed.

In the high-frequency furnace 118, a metal mesh electrode 125 is provided as in the case of the metal mesh electrode 50 of the first embodiment. These CVD processing chambers 102 to 106 are maintained in a constant vacuum state through an exhaust port 127 connected to a vacuum source 126 such as a vacuum pump as shown in FIG.

With this configuration, a silicon thin film can be continuously formed on the surface of the base material B as in the first and second embodiments described above, and the production efficiency is improved. . The embodiments of the inductively coupled plasma CVD method and the inductively coupled plasma CVD apparatus of the present invention have been described above. Within the scope of the present invention, for example, in the above embodiments, the formation of a silicon thin film has been described. , Other silicon germanium films (SiG
e), a silicon carbide film (SiC), a silicon nitride film (SiN), a silicon oxide film (SiO ₂ ), a thin film such as a diamond-like carbon film (DLC), and the like. Although the device of the mold type has been described, it is needless to say that various changes can be made, such as changing to a device of a horizontal type.

[0082]

Embodiment 1 A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. As a reaction gas, a pure gas of 100% monosilane gas was supplied into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 mT.
While maintaining at orr, a high frequency was supplied from a 13.56 MHz high frequency power supply at an output of 300 W to a high frequency coil disposed at a distance of 100 mm from the substrate stage.

At this time, the coil for applying the high frequency and the nozzle for supplying the reaction gas were integrated. The substrate is heated to 200 ° C. and treated for 100 seconds, so that 50
A product 1 of the present invention on which an amorphous silicon thin film of 00 Å was formed was obtained.

As a comparative example, a product treated under the same conditions without heating the high-frequency coil was designated as a comparative product 1. On this occasion,
A ring-shaped gas nozzle was separately prepared and arranged in a reaction chamber to supply and process a reaction gas.

[0085]

Embodiment 2 A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. As a reaction gas, a pure gas of 100% monosilane gas was supplied into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 mT.
While maintaining at orr, a high frequency was supplied from a 13.56 MHz high frequency power supply at an output of 300 W to a high frequency coil disposed at a distance of 100 mm from the substrate stage.

At this time, the coil for applying the high frequency and the nozzle for supplying the reaction gas were separately arranged. Then, the high frequency application coil is heated to 200 ° C., and the base material is also heated to 200 ° C.
The product 2 of the present invention in which an amorphous silicon thin film was formed on a substrate was obtained by heating to 100 ° C. and treating for 100 seconds.

[0087]

Embodiment 3 A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. As a reaction gas, a pure gas of 100% monosilane gas was supplied into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 mT.
While maintaining at orr, a high frequency was supplied from a 13.56 MHz high frequency power supply at an output of 300 W to a high frequency coil disposed at a distance of 100 mm from the substrate stage.

At this time, the coil for applying high frequency and the nozzle for supplying the reaction gas are integrated, and the coil for applying high frequency is
Heated to 00 ° C. Also, the substrate was heated to 200 ° C,
By treating for 100 seconds, the product 3 of the present invention in which the amorphous silicon thin film was formed on the base material was obtained.

[0089]

Fourth Embodiment A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. As a reaction gas, a pure gas of 100% monosilane gas was supplied into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 mT.
While maintaining at orr, a high frequency was supplied from a 13.56 MHz high frequency power supply at an output of 300 W to a high frequency coil disposed at a distance of 100 mm from the substrate stage.

At this time, the high-frequency application coil and the reaction gas supply nozzle were separately arranged. Further, at this time, a metal mesh (# 20) made of SUS304 was placed at a distance of 3 cm from the high-frequency application coil, and treated for 250 seconds to obtain a product 4 of the present invention. At that time, the substrate was heated to 200 ° C.

[0091]

Fifth Embodiment A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. As a reaction gas, a pure gas of 100% monosilane gas was supplied into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 mT.
While maintaining at orr, a high frequency was supplied from a 13.56 MHz high frequency power supply at an output of 300 W to a high frequency coil disposed at a distance of 100 mm from the substrate stage.

At this time, the coil for applying the high frequency and the nozzle for supplying the reaction gas were separately arranged. Further, at this time, a voltage of +20 V was applied from a DC power supply to a metal mesh (# 20) made of SUS304 at a distance of 3 cm from the high-frequency application coil, and the treatment was performed for 250 seconds to obtain a product 5 of the present invention. At that time, the substrate was heated to 200 ° C.

[0093]

EXAMPLE 6 A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. As a reaction gas, a pure gas of 100% monosilane gas was supplied into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 mT.
While maintaining at orr, a high frequency was supplied from a 13.56 MHz high frequency power supply at an output of 300 W to a high frequency coil disposed at a distance of 100 mm from the substrate stage.

At this time, the high-frequency application coil and the reaction gas supply nozzle are integrated, and the high-frequency application coil is
Heated to 00 ° C. Further, at this time, a voltage of +20 V was applied from a DC power supply to a metal mesh (# 20) made of SUS304 at a distance of 3 cm from the high frequency application coil,
The product 6 of the present invention was obtained by treating for 250 seconds.
At that time, the substrate was heated to 200 ° C.

[0095]

EXAMPLE 7 A substrate (quartz glass substrate, thickness: 0.5 mm, dimensions:
(5 cm × 5 cm) The substrate was set on the stage. A pure gas of 100% dichlorosilane gas was supplied as a reaction gas into the reaction chamber without dilution. The flow rate of the monosilane gas was 30 cc / min, and the pressure in the reaction chamber was 5 cc.
While maintaining the pressure at mTorr, the high-frequency coil disposed at a distance of 100 mm from the substrate stage was subjected to 13.56 MH.
A high frequency was supplied from a high frequency power supply of z at an output of 300 W.

At this time, the high-frequency application coil and the reaction gas supply nozzle are integrated, and the high-frequency application coil is
Heated to 00 ° C. Further, at this time, a voltage of +20 V was applied from a DC power supply to a metal mesh (# 20) made of SUS304 at a distance of 3 cm from the high frequency application coil,
The product 7 of the present invention was obtained by treating for 250 seconds.
At that time, the substrate was heated to 200 ° C.

For the products 1 to 7 of the present invention and the comparative product 1 obtained above, the film thickness distribution, the number of reactions until dust is observed on the substrate, the defect density in the film, the adhesion on the mesh metal plate It was determined whether the film could be removed. The results are shown in Table 1 below.

The number of reaction times until dust is observed on the substrate is as follows: when a film of 5,000 Å is applied once as a batch, dust (mainly, a peeled film) is observed on the substrate at any time. Was measured. The measurement of the film thickness distribution is performed by using a spectroscopic ellipsometer “DVA-36VM”.
(Manufactured by Mizojiri Optical Co., Ltd.). Further, the measurement of defect density is described in “Amorphous Silicon and Related Ma
terials ", pp. 297-327, 1988. Further, whether or not the adhered film on the mesh metal plate can be removed is determined by applying a voltage of −100 to −200 V to the mesh metal electrode in the presence of H ₂ plasma (without introducing a Si source). The presence or absence of disappearance of the attached silicon film was measured.

As is clear from the results shown in Table 1, the film thickness distribution was improved when the high frequency application coil and the gas nozzle were integrated. Furthermore, when the coil for high frequency application is heated, or when the metal mesh plate is arranged between the coil and the base material, the number of times of reaction until dust is observed on the base material increases. Further, it was found that when a voltage was applied to the metal mesh plate, the defect density in the film was reduced and the quality of the silicon film was improved.

[0100]

[Table 1]

[0101]

Example 8 In the same manner as in Example 2, the procedure was carried out by changing the degree of vacuum during the reaction in the reaction chamber and the heating temperature of the high-frequency coil. The results are shown in Tables 2 and 3 below.

As is clear from Table 3, the degree of vacuum is preferably 0.3 mmTorr to 100 mTorr.
r, more preferably 5mTorr to 30mTorr
It can be seen that the pressure is preferable. Also, it is understood that the heating temperature of the high-frequency coil is desirably in the range of 150 to 300C.

When the temperature of the coil is set to 300 ° C. or more,
There is a tendency that the deposition rate of the silicon film adhering to the coil increases. Even when the coil is heated, there is a problem that the film is peeled off when the film is sufficiently adhered. Therefore, the coils also need to be periodically cleaned. When the coil temperature is set to 300 ° C. or more, the cleaning time is increased because the film adheres more, which is not practically appropriate.

[0104]

[Table 2]

[0105]

[Table 3]

[0106]

According to the present invention, when a vapor deposition film is formed on a substrate surface, the vapor deposition film is formed at a location other than the substrate surface, and the vapor deposition film peels off and adheres to the substrate surface. Therefore, the quality of the silicon thin film on the substrate surface can be prevented from deteriorating due to the peeling of the silicon thin film, and a high quality silicon thin film can be obtained.

Further, by applying a high-frequency power by a high-frequency application coil disposed in the reaction chamber,
The high-frequency coil directly guides high-frequency waves into the reaction chamber. As a result, the efficiency of inductively coupled plasma generated together with the reaction gas supplied into the reaction chamber is improved, and the reaction pressure of the reaction gas can be reduced. .

[0108] Therefore, the gas mist (powder) is less likely to occur in the plasma, without impurities are mixed into the silicon thin film, a uniform, it is possible to form a high-quality silicon thin film with few defects, electron density 10 ¹⁰ - 10 ¹²
Since it is as high as about cm ^-3 , the decomposition rate of the raw material gas is improved, the deposition rate on the substrate surface is increased, and the production efficiency is improved.

In addition, just by changing the size of the coil,
Since it is possible to cope with the dimensions of the base material, it is possible to reduce equipment costs and reduce costs. Also,
According to the present invention, the supply path of the reaction gas is provided inside the high frequency application coil, and the reaction gas is supplied from the reaction gas supply port formed in the high frequency application coil to perform the vapor deposition. As compared with the case where a reaction gas supply nozzle is provided, the number of places where unnecessary silicon thin films are formed is reduced, so that impurity contamination due to peeled silicon thin films is reduced, and a uniform and high quality silicon thin film is formed on the substrate surface. Can be formed.

Further, according to the present invention, since the vapor deposition is performed while controlling the temperature of the high frequency application coil, the unnecessary silicon thin film formed on the surface of the high frequency application coil becomes a dense film, and is separated from the surface of the high frequency application coil. It becomes difficult to form a uniform, uniform and high-quality silicon thin film on the surface of the base material.

Further, according to the present invention, since the mesh metal plate or the metal mesh electrode is disposed between the high-frequency application coil and the substrate, the gas supply disposed in the reaction chamber above the inner wall of the reaction chamber and the substrate. Even if the silicon thin film formed on the surface of a member such as a nozzle peels off and falls, it is captured by these mesh metal plates or metal mesh electrodes, preventing the peeled silicon thin film from adhering to the substrate. By doing so, it is possible to prevent the quality of the silicon thin film on the substrate surface from deteriorating due to the peeling of the silicon thin film, and to form a uniform, uniform and high-quality silicon thin film on the substrate surface.

Further, by using a metal mesh electrode, neutral radicals (SiH ₄ ), which are decomposition products generated from the SiH ₄ gas existing above the metal mesh electrode, are formed.
Only ₃ radicals) are diffused over a long distance and pass through the metal mesh electrode, so that only the effective radical species (SiH ₃ radicals) reach the substrate surface and contribute to the film growth, thus providing high quality. Thus, a uniform silicon thin film can be formed.

In addition, with this metal mesh electrode, ions existing in the plasma can be prevented from reaching the substrate surface, so that the ion bombardment can be prevented from affecting the substrate surface thin film. It is possible to form a high quality and uniform silicon thin film.

Further, according to the present invention, since the pressure in the reaction chamber is 0.3 mTorr to 100 mTorr, preferably 5 mTorr to 30 mTorr, gas mist (powder) is hardly generated in the plasma. It is possible to form a uniform, high-quality silicon thin film with few defects without impurities mixed into the silicon thin film, increase the deposition rate on the substrate surface, and improve production efficiency.

When a metal mesh electrode is used,
If the reaction pressure is too low, the straightness of the radical species becomes too high, and a mottled pattern corresponding to the mesh shape is formed on the surface of the silicon film, and the deposited film becomes heterogeneous. By setting the pressure, it is possible to prevent such non-uniform deposition film.

Further, according to the present invention, the reaction gas is a silicon-based gas, the deposited film is a silicon thin film,
Preferably, the reaction gas is a gas containing SiH _x Cl _4-x (where X is an integer of 0 to 3), more preferably dichlorosilane. It is possible to form a silicon thin film having high light stability such as maintaining characteristics and photoelectric characteristics for a long time.

[Brief description of the drawings]

FIG. 1 is a schematic view showing a first embodiment of an inductively coupled plasma CVD apparatus for performing an inductively coupled plasma CVD method according to the present invention.

FIG. 2 is a sectional view showing another embodiment of the high frequency applying coil of the inductively coupled plasma CVD apparatus of the present invention.

FIG. 3 is a sectional view showing another embodiment of the high frequency applying coil of the inductively coupled plasma CVD apparatus of the present invention.

FIG. 4 is a second view of the inductively coupled plasma CVD apparatus for performing the inductively coupled plasma CVD method of the present invention.
It is a schematic diagram showing an example of.

FIG. 5 is a schematic view showing a third embodiment for carrying out the inductively coupled plasma CVD method of the present invention.

FIG. 6 is an overall schematic view showing a third embodiment of a continuously operable inductively coupled plasma CVD apparatus for carrying out the inductively coupled plasma CVD method of the present invention.

FIG. 7 is an enlarged view showing a part thereof.

FIG. 8 is a sectional view taken along line VIII-VIII in FIG. 7;

FIG. 9 is a schematic diagram of a conventional inductively coupled plasma CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 12 Reaction chamber 13 Exhaust port 14 Stage 16 Bottom wall 17 Side wall 18 High frequency application coil 20, 22 Base end portion 24 High frequency power supply 26 Partition wall 27 Reaction gas supply source 28 Heat medium passage 30 Heat medium source 32 Reaction gas supply path 34 Reaction gas supply Port 36 Reflecting member 38 Rectifier plate member 40 Pressure adjusting chamber 42 Gate valve 50 Metal mesh electrode 52 DC power supply 101 Feeding chamber 102 to 106 Processing chamber 109 Gate device 110 Feeding roller 111 Protective film take-up roller 112, 113, 117 Guide roller 114 Protective film feeding roller 115 Winding roller 116 Gate gas supply path 118 High frequency furnace 119 High frequency power supply 120 High frequency coil 125 Metal mesh electrode 126 Vacuum source 127 Exhaust port

Continued on the front page F-term (reference) 4K030 AA06 BA29 FA04 JA09 KA15 KA17 LA16 5F045 AA08 AA16 AB01 AB02 AB04 AB06 AB07 AB32 AB33 AC01 AC05 AC16 AC17 AD06 AE13 AE15 AE17 AF07 AF10 BB08 BB09 BB10 BB12 BB14 BB15 BB15 BB15 BB15 BB15 BB22 EE12 EF04 EF14 EH04 EH05 EH06 EH08 EH11 EK10 EM09 EM10 EN04 HA24

Claims (15)

[Claims] 1. A reaction gas is supplied to a reaction chamber maintained in a vacuum state, and a high-frequency power is applied by a high-frequency application coil disposed in the reaction chamber to generate a reaction gas inductively coupled plasma. An inductively coupled plasma CVD method for forming a vapor deposition film on a surface of a substrate disposed in a reaction chamber so as to face a high-frequency application coil; An inductively-coupled plasma CVD method characterized in that a deposited film is formed at a place other than the surface of a material to prevent the deposited film from peeling off and adhering to the substrate surface. 2. The method according to claim 1, wherein a reactant gas supply passage is provided inside the high frequency application coil, and the reaction gas is supplied from a reaction gas supply port formed in the high frequency application coil to perform vapor deposition. Inductively coupled plasma CVD
Method. 3. The inductively coupled plasma CVD method according to claim 1, wherein the vapor deposition is performed while controlling the temperature of the high frequency application coil. 4. A method in which a mesh metal plate is interposed between the high-frequency application coil and a base material to form a vapor-deposited film on a surface of the base material arranged in the reaction chamber so as to face the high-frequency application coil. The inductively coupled plasma CVD method according to claim 1, wherein: 5. A deposition film is formed on a surface of a base material arranged in the reaction chamber so as to face the high frequency application coil with a metal mesh electrode interposed between the high frequency application coil and the base material. The inductively coupled plasma CVD method according to any one of claims 1 to 3. 6. The inductively coupled plasma CVD method according to claim 1, wherein the reaction gas is a silicon-based gas, and the deposited film is a silicon thin film. 7. The inductively coupled plasma CVD method according to claim 6, wherein the reaction gas is a gas containing SiH _x Cl _4-x (where X is an integer of 0 to 3). 8. The pressure in the reaction chamber is 0.3
8. The inductively coupled plasma CVD method according to claim 1, wherein the pressure is from mTorr to 100 mTorr. 9. A reaction chamber maintained in a vacuum state, a reaction gas supply unit for supplying a reaction gas into the reaction chamber, and a reaction gas inductive coupling type disposed in the reaction chamber and applying high frequency power to the reaction chamber. An inductive coupling type comprising: a high-frequency application coil for generating plasma; and a base material installation part for disposing a base material on which a deposition film is formed, which is disposed in the reaction chamber so as to face the high-frequency application coil. An inductively-coupled plasma CVD apparatus, comprising: means for preventing a deposited film formed in a portion other than the surface of the substrate from peeling off and adhering to the surface of the substrate. . 10. A means for preventing a vapor deposition film formed at a place other than the base material surface from peeling off and adhering to the base material surface, comprises a reaction gas formed inside the high frequency application coil. 10. A supply passage and a reaction gas supply port for supplying a reaction gas into the reaction chamber.
2. The inductively coupled plasma CVD apparatus according to item 1. 11. A high-frequency applying coil provided inside the high-frequency applying coil for preventing a vapor-deposited film formed on a portion other than the substrate surface from peeling off and attaching to the substrate surface. The inductively coupled plasma CVD apparatus according to claim 9, wherein the apparatus is a temperature control apparatus for controlling the temperature of the plasma. 12. The temperature control device according to claim 9, wherein the temperature control device is a heat medium temperature control device that controls a temperature by flowing a heat medium through a heat medium passage formed in a high-frequency application coil.
2. The inductively coupled plasma CVD apparatus according to claim 1. 13. A means for preventing a deposited film formed at a place other than the surface of the base material from peeling off and adhering to the surface of the base material is provided between the high frequency application coil and the base material. The inductively coupled plasma CVD apparatus according to any one of claims 9 to 12, wherein the apparatus is a mesh metal plate. 14. A means for preventing a vapor-deposited film formed at a place other than the base material surface from peeling off and adhering to the base material surface is provided between the high-frequency application coil and the base material. 10. A metal mesh electrode formed as described above.
Inductively coupled plasma CVD according to any one of claims 1 to 12,
apparatus. 15. The inductively-coupled plasma CVD according to claim 9, wherein the substrate installation section is configured to continuously pass through a plurality of reaction chambers. apparatus.