JPH0225575A - Method for forming deposited film - Google Patents

Abstract

PURPOSE:To form a deposited film having uniform quality over a large area by activating plural film forming raw gases with a heated filament respectively in different spaces, introducing the gases into a film forming space through a gas inlet of specified shape, and mixing the gases. CONSTITUTION:Two or more kinds of film forming raw gases are separately introduced into activation spaces separated by partition plates 123-127 through gas inlet pipes 109-112. The filaments 101-108 arranged in the respective activation spaces and consisting of a catalytic metallic material are energized to heat the gases. The raw gases activated into plasma are introduced into the film forming space 117, mixed, and allowed to react with one another to form a deposited film on a substrate 118. In this device for forming a deposited film, the gases are allowed to flow at right angles to the filaments 101-108, and respective gas inlets 113-116 are formed into a rectangular or elliptical shape having >=2 ratio of the length of the major axis to that of the minor axis, narrowed to a length smaller than that of the minor axis, and set in parallel. By this method, the activated raw gases can be uniformly mixed over a large area.

Description

DETAILED DESCRIPTION OF THE INVENTION C) Technical Field to Which the Invention Pertains The present invention relates to an apparatus for forming an a-lipid deposited film using a vapor phase growth method. More specifically, the present invention relates to a deposited film forming apparatus that can independently control the characteristics of a deposited film for each component and can form a deposited film over a large area.

[Description of the Prior Art] Forming a deposited film over a large area at low cost is an urgent need for producing semiconductor devices such as optical input sensor devices, photosensitive devices for electrophotography, and photovoltaic device liquid crystal drive circuits. This is what is required.

Conventionally, deposition using the vapor phase growth method! Regarding the formability, it is said that plasma, heat, light, etc. are used as energy to decompose the raw material gas for film formation, and it is possible to form a deposited film with a large area. However, in any case, it is rare to use a single gas as the raw material gas for film formation, and even when forming a deposited film with a single composition, in addition to the raw material gas for film formation, Dilution gas is often used, and when forming a deposited film consisting of multiple components by vapor phase growth, multiple raw material gases for film formation are mixed in advance and introduced into the film formation chamber. is common.

However, the conventional method for forming a deposited film performed in this manner has the following problems.First of all, even when forming a deposited film of a single composition, the characteristics of the deposited film cannot be changed. In order to improve performance, it is necessary to optimize various film-forming parameters such as the mixture ratio of source gas and diluent gas, and the range of allowable film-forming parameters is limited to a relatively narrow range. Ru. In addition, when forming a deposited film of multiple components, the raw material gas for each film component has a different level of decomposition energy, so the flow rate ratio of the raw material gas for film formation introduced into the film forming chamber is Various film formation parameters such as 2! above are often more limited than in the case of depositing a single composition film, and the above 2! ■There is also the problem that it is quite difficult to change the ratio.

Furthermore, when decomposing a plurality of film-forming raw material gases, it is necessary to delicately control the various conditions involved, and therefore the controllable range of film characteristics and film composition is also limited.

To solve the above-mentioned problems, a method has been proposed in which each source gas for film formation is activated independently, and the activated gases are mixed and reacted with each other to form a deposited film (Unexamined Japanese Patent Publication No. According to this deposited film formation method, the activation of each film forming raw material gas can be controlled independently, so in the case of a film with a single composition, it is possible to improve the film properties. In the case of a deposited film having a plurality of compositions, a deposited film having a desired compositional component ratio can be obtained using a wide range of deposition parameters without degrading the film quality.

However, the deposited film forming apparatus using this deposited film forming method is
Compared to conventional deposition film forming equipment using mixed gas,
It is difficult to form a deposited film over a large area. In other words, in the conventional deposition film formation method using a mixed gas, it was relatively easy to increase the area by applying decomposition energy to the mixed gas over a wide range. In the method of activating and forming a deposited film, the activated gases are mixed together to form a deposited film, which often results in uneven film thickness and quality. It was difficult to mix the two to form a deposited film. Specifically, methods using multiple nozzles as shown in No. 6 @ and methods using a ring-shaped outlet have been proposed, but in both cases, the distance between the nozzle and the ring affects the film thickness and the quality of the film. This was not sufficient to form a deposited film with uniform quality over a large area.

[Purpose of the invention]

An object of the present invention is to solve the problems in the prior art described above, and to use a method of independently activating and mixing a plurality of film-forming raw material gases to form a deposited film, while also achieving a uniform deposition film over a large area. It is an object of the present invention to provide a deposited film forming apparatus capable of forming a deposited film of film quality.

[Structure and operation of the invention]

The present inventor has conducted extensive research to overcome the above-mentioned problems in conventional deposited film forming apparatuses and achieve the above-mentioned object of the present invention. In an activation space equipped with a filament made of a metal material that has a catalytic action, the filament is activated into a plasma state by the heat generation effect caused by electricity supply, and the activated raw material gas for film formation is transferred to the length of the filament. The activated gases are transported in a direction perpendicular to the axial direction, and the activated gases are introduced into the film-forming space through a plurality of gas inlets and mixed. In an apparatus that forms a deposited film on a substrate by reaction, we have obtained the knowledge that the shape of the gas inlet and the distance between each gas inlet are related to the thickness and quality of the deposited film formed on the substrate. .

The present invention was completed as a result of further research based on this knowledge, and its gist is to decompose two or more types of film-forming raw material gases in separate activation spaces. Activated through energy, the activated gases are introduced into the film forming space through separate gas introduction ports and mixed, and activated near the surface of the substrate installed in the film forming space. A deposited film forming apparatus in which a deposited film is formed on the substrate by mutual reaction between the activated gases, wherein each of the plurality of activation spaces is provided with a filament using a metal material having a catalytic action. Due to the heat generation effect caused by passing current between the filaments, each of the raw material gases for film formation is activated into a plasma state, and each of the activated gases is activated in a direction perpendicular to the long axis direction of the filaments. Further, each of the gas inlets has a rectangular or oval shape in which the length of the major axis is at least twice as long as the minor axis; The deposited film forming apparatus is characterized in that the deposited film forming apparatus is installed in parallel and close to each other at a distance of less than the length.

The present invention will be explained in detail below using the drawings.

FIG. 1 is a sectional view of a basic example of the deposited film forming apparatus of the present invention, and 101 to 108 are long filaments wound in a spiral shape. The overall length of the filament is determined as desired by the area of the deposited film to be formed. The winding diameter and number of windings also vary depending on the length of the filament and the overall size of the device, but it is desirable that the winding diameter is 3 to 3 degrees in diameter and the number of windings is 1 turn/cm to 20 turns/country.

The raw material gas for film formation is activated by generating heat in the elongated filaments 101-108, and the activated gas is transported in a direction perpendicular to the long axis direction of the filaments, thereby converting the active species of the gas into elongated filaments. can be uniformly introduced into the film forming space over a wide range.

Furthermore, a plurality of filaments can be arranged in the gas transport direction as in the apparatus shown in FIG. Thereby, the activation efficiency of the film-forming raw material gas can be increased.

The materials of the filament are ■A, VA, VIA, ■A group transition metal element CI'', Hf, La, Mo, Nb,
Re, Ta, Tc.

Ti, V, W, Zr or Pd of group II element,
P.L.

Selected from Rh, Ir, etc. Among the above elements, Mo and Ta are preferred from the viewpoint of heat resistance and reaction resistance.

W, Pd, Pt, W is optimally selected.

Regarding the shape of the filament, the same effect can be obtained even if it is a coil as described above, a plate shape, or a mesh shape.

In the case of a plate-shaped heater, as with the coil-shaped heater, the temporary thickness, width, shape, material of the plate, and its resistance value are selected in order to obtain the desired heater temperature. Joul θ heat is generated in response to the current, allowing heating and reaction. The case of a mesoche shape is also similar to the case of a plate shape.

The overall size of the above-mentioned plate-like and mesh-like filaments is determined by the shape of the gas inlet. Also, like a coil, a plurality of them can be arranged in the gas transport direction.

The temperature of the filament is selected in consideration of the reactivity of the filament with various gases, heat resistance, etc. as described above, and is generally selected from the range of 800'C to 2000C.

Next, transport multiple activated gases to a long region,
Rectangular or oval gas inlets 113 to 116
Then, it is introduced into the film forming space. In this case, the shape of the gas inlet greatly influences the uniformity of the deposited film.

FIG. 2 is a diagram showing the shape of a gas introduction port for introducing activated gas into the film forming space. Here, if the length of the short axis of the plurality of rectangular gas inlets 201 to 204 is a, the length of the long axis is b, and the distance between each gas inlet is C, then a
It was found that the thickness and quality distribution of the deposited film changed depending on the ratio of :b:c.

For example, 5iH4 diluted to 10% with H2 (hereinafter 5rH
a /H'z) and Ge1 diluted to 5% with H2
1a (hereinafter referred to as GeHa/Hz) is separately activated by the exothermic energy of a filament, and when hydrogenated amorphous S 1te (hereinafter abbreviated as a-3iGe:H) is deposited, depending on how a: b: c is taken, In this case, unevenness occurs in the film composition of a5iGe:H. 7th
The figure shows the unevenness in the composition ratio of the deposited film when 5iHaO) active species are introduced from gas inlets 201 and 203, and Ge14a active species are introduced from gas inlets 0202 and 204.
The horizontal axis is the position of the gas inlet in the short axis direction, and ABCD is the position of the second gas inlet.
This corresponds to the positions of gas inlet ports 201 to 204 in the figure.

The vertical axis indicates the composition ratio X of a-S 1xGe+-x:H.

Here, the unevenness of the film composition will be expressed as ΔX during the variation of X. (However, X was determined by measurement using an X-ray microanalyzer.) The composition ratio During the fluctuation, ΔX was as shown in FIGS. 8 and 9.

As is clear from Figures 8 and 9, the ratio of the length of the long axis to the length of the short axis (b/a) is more than double, and the ratio between each inlet to the length of the short axis (c/a) is By setting the ratio of the distances to 1 times or less, S in the minor axis direction
It was found that the variation ΔX in the H&lI formation X of +wGf3r-wWl was significantly reduced. However, in Figure 8, b/
When changing a, the length of the long axis was kept constant at 8c11 and the length of the short axis was changed. Furthermore, when changing b/a, c/a was fixed at 1/2.

Also, when changing c/a, aw'lcs, b
-8cm constant * S I H4/ Hz and G
e Ha/H・z flow rate is a-gcs, b-8
In the case of cm, the Sth (4/H1゜GeH, /H, both 20
0aacm, and when a was changed, the flow rate was changed in proportion to a change of 1.

The internal pressure of the film forming chamber was 0.6 Torr, the total length of the filament was 81, the winding diameter was 5-1, 5 times/c11, and 5iHi/
The IT flow was applied so that the temperature was 1700°C on the H side and 1500°C on the GeH*/Ht side. Further, the distance between the gas inlet and the substrate was 5 aa. Here, by increasing the distance between the gas inlet and the substrate to, for example, 10c11, the eighth
As shown in the graph at one point aim in the figure, the variation in film composition ΔX
However, in this case, the deposition rate is less than L/4 compared to the case where the deposition rate is 5 degrees, so by widening the distance between the gas inlet and the substrate, the deposition rate can be reduced. 31
It is not practical to improve the uniformity of 111.

The above example shows the shape and shape of the gas inlet when 5il (4/Hz and GeHa/H* are activated separately and the activated gases are mixed and reacted to deposit an a-3iGe:H film. This shows the relationship between the arrangement and the uniformity of the deposited film, but when forming a deposited film of other compositions such as a SiC:H film, or a deposited film of a single composition, it is necessary to apply multiple gases separately. In all cases of activation, the same results as in the previous example were obtained.

That is, the ratio of the length of the long axis to the length of the short axis of the rectangular or elliptical gas inlet is preferably 2 times or more, more preferably 4 times or more, and optimally 8 times or more. is desirable. Also, the ratio of the distance between each gas inlet to the length of the short axis is preferably 1 or less, more preferably 1
/2 times or less, preferably 1/4 times or less.

By providing the gas inlet in such a shape and arrangement, it has become possible to greatly improve the uniformity of the deposited film. Here, by setting the length of the gas inlet in the long axis direction to a desired value, it is possible to enlarge the formation area of the deposited film to a desired size. Furthermore, by increasing the number of gas inlets installed in parallel in the direction of the minor axis, the area in which the deposited film is formed can be expanded to a desired size.

Therefore, it has become possible to uniformly form a deposited film on a desired area while activating a plurality of film-forming raw material gases separately.

Furthermore, as in the deposited film forming apparatus shown in FIG. 5, which will be described in detail later, by moving the substrate in the short axis direction, it is possible to continuously form a deposited film over a larger area in the short axis direction. It is possible. Further, by moving the substrate, the uniformity of the film quality in the short axis direction can be further improved.

The deposited film forming apparatus of the present invention independently activates a plurality of film-forming raw material gases, thereby independently controlling the activation rate of the plurality of film-forming raw material gases, thereby controlling the film quality or composition of the deposited film. It has become possible to form a uniform deposited film over a large area while maintaining the advantage of being able to finely control the ratio over a wide range without deteriorating the film quality.

Here, the plurality of film-forming raw material gases used in the deposited film forming apparatus of the present invention are 21111 or higher, and each of them may be a mixed gas like the film-forming raw material gases described above. Further, the present invention is not limited by the type of film-forming raw material gas.

Further, the partition plates 123 to 127 forming rectangular or oval gas inlets may be parallel to each other,
It doesn't have to be parallel, and the material is SUS or M
or the like or plated with Ni or the like thereon.

In addition, the distance between the gas inlet and the filament varies depending on the type, flow rate, pressure, etc. of the raw material gas for film formation, but it is preferably between 0 and 100 nm. In the case of a film-forming raw material gas, it is desirable to make this distance shorter than in the case of a film-forming raw material gas in which the active species have a long lifespan.

〔Example〕

Hereinafter, the present invention will be explained in more detail using Examples.
The present invention is not limited to these in any way.

FIGS. 3 and 4 on the screen 11 show an example of the deposited film forming apparatus of the present invention. FIG. 3 is a sectional view of the deposited film forming apparatus, and FIG. 4 is a view of the filament portion of FIG. 3 viewed from above. The plurality of film-forming raw material gases are activated by separate filaments, and each filament is separated by a partition plate made of stainless steel, molybdenum, or the like, so that the film-forming raw material gases do not mix. In addition, in this example, the long axis (α
−α′) direction is a rectangular gas outlet with a short axis (β−β
′) direction, the long axis (α−α′)
The formation area of the deposited film could be expanded not only in the direction but also in the short axis (β-β') direction.

Hereinafter, an example will be shown in which an n-type amorphous silicon film doped with phosphorus (hereinafter abbreviated as P-doped a-Si:H film) was deposited using the deposited film forming apparatus shown in FIGS. 3 and 4. .

200 scc+w of H2 is introduced from each of the gas introduction pipes 311, 314, 317.
04.Heating 307 and 310 to 1800℃,
Active species of H2 were generated. At the same time, the gas introduction pipe 312
, 315.318, each of which was diluted to 20% with He, was introduced for 150 sec, and the length was 20 as.
, a filament 3 with a winding diameter of 7fi and a number of windings of 5 turns/c11.
02,305.308 to 1600℃, Si
Active species of Ha were generated. Furthermore, at the same time, the gas introduction pipe 31
2000pp- of He from 3,316,319 respectively
PH3 diluted to 803CC11 was introduced, and the length was 20c.
+a, a filament 303. with a winding diameter of 5 fl and a number of windings of 8 turns/cs. ．． 306,309 was heated to 1600℃ and the pH
ff active species were generated.

Then, active species at 1.5 c! IX 20a
From the gas inlet of s to the Sth (activated species of 4) l cam
PH, active species were introduced into the film forming space 924 from a 20 cs gas inlet, mixed at an internal pressure of 0.7 Torr to react with each active species, and heated to 280'e with an infrared lamp 323 using 20clIX20 (J). P − on the substrate 321
A dopeda-3t:H film was deposited.

P-dopeda deposited using a glass substrate
When the characteristics of the -5i:H film were evaluated, the film thickness was 0.8.
c+m, IM rate 4.4 people/sec, e,
-4, BXIO-'Ω-'(J-', σa =4.
7 X 10-'Ω-'cm-'activation energy ΔE -0,08eV, Egopt-], 75eV
Met. In addition, the distribution of each characteristic within the substrate plane varies depending on the film thickness ±
Within 2%, σ2. Both σ4 values were within ±15%, and the uniformity was good.

Using the deposition film forming apparatus shown in Figs.
:H1l! could be deposited. Furthermore, since the amount of 5iHa(D active species produced and the amount of PHff active species produced could be controlled independently), the degree of phosphorus in the P-doped a-3i:H film could be controlled with good reproducibility as desired.

Furthermore, since the production amounts of H2 active species and SiHa active species can be controlled independently, the film quality can be easily controlled as desired from an amorphous silicon film to a microcrystalline silicon film, and the deposition rate can also be adjusted as desired.
It was possible to control π without worsening 'lt. here,
Although the P-doped a-St:H film is used as an example, it is also possible to form a deposited film having a different composition, such as a p-type amorphous silicon film doped with boron or an alloy-based amorphous silicon film.

Suzuki 11 FIG. 5 shows an example of the deposited film forming apparatus of the present invention.

501 to 507 are filaments, and the method of exciting the film forming raw material gas is the same as in Example 1. The feature of the deposited film forming apparatus shown in FIG. 5 is that a substrate 505 that can be curved is wound around a roll, continuously sent out from a roll 517 to form a deposited film, and wound around a roll 518.
The advantage is that a deposited film can be formed continuously over a large area in the direction of the short axis (β-β') in FIG. Also, the fourth
In the long axis (α-α') direction, the desired deposited film formation area can be obtained by changing the length of the filament. A deposited film can be continuously formed over a large area.

Hereinafter, an example will be described in which amorphous silicon germanium [(hereinafter abbreviated as a-3iGe:H film) is deposited using the deposited film forming apparatus shown in FIG.

Gas introduction [from 508, 511, 514, respectively Hz
Introduced 2505ccta, length 20c+i, t! Filament 501°50 with diameter 8fi and number of windings 5 turns/cs
4.507 were each heated to 1800°C to generate active species of H2. At the same time, 200sccm of 5itFh was introduced from each gas introduction pipe 509 and 512, and the length was 2.
0 (J, winding diameter 6n+, number of S turns 6 times/(2) filaments 502, 505 are heated to 1600°C, Si, Fh
active species were generated. Furthermore, at the same time, the gas introduction pipe 510.
GeFa diluted to 5% with He from 513 to 1
Introduced ooscc 160 filament 503.506 with length 20cm, winding diameter 4fi, number of windings 8 times/cs.
It was heated to 0° C. to generate active species of GeFa.

Then, the active species of Ht generated by the above method was passed through the rectangular gas inlet of 1.5cm x 2Qcs from the rectangular gas inlet of 2 values x 20all separated by a partition plate.
The activated species of b were introduced into the Ge
The active species of Fa is introduced into the membrane space 515, and the internal pressure is 0.4 T.
orr to react with each active species, and infrared lamp 5
5C stainless steel substrate 516 heated to 250℃ in 19
a-5iGe while moving at n/win speed: H
i% was deposited. Substrate 5 that can be curved here
As an example of 16, aluminum, heat-resistant polyester, polyimide, etc. can be used in addition to the above materials. An a-3iGe:H film was deposited on a 20 cm x 20 cm glass substrate heated to 250° C. under the above conditions without moving the roll, and the film properties were evaluated. The results are shown in Table 1, column 2.

Other data are the results of varying the flow rate of GeFs and the temperature of the filament activating G e Fa.

Table 1 shows an example of creating films with different optical band gaps (Egopt) by changing the composition of a-3iGe:H films by independently controlling the amount of activation of GeFa. decomposes mixed gas,
In the conventional deposited film formation method, a-3i with small Egopt
When attempting to create a Ge:H film, the photoconductivity (σ, ) decreased, the dark conductivity (σ, ) increased, and the film quality often deteriorated, but in the device of the present invention, the activity of GeF4 By being able to independently control the
A Ge film with good IFJ quality was easily obtained.

Furthermore, by changing the production amount of Hz active species and the production amount of 5izFi active species at the same time as the production amount of G e Fa active species, it is possible to form deposited films with different deposition rates at approximately the same Egopt. I was also able to do it.

The deposition rate distribution of the a-8+Ge:H film deposited here on the substrate is within 3%, the distribution of the composition ratio X of S I HG 13 l-11 is within 2%, and the distribution of electrical conductivity σ is 40%.
It was within That is, a uniform a-3iGe:H film with a width of 30 cm and a desired length could be deposited.

As described above, the a-5iGe film could be uniformly formed over a large area using the deposited film forming apparatus shown in FIG. Also,
By independently controlling the production amounts of 5tzFh active species and GeF4 active species, a high-quality a-5iGe:H film with a desired band gap could be easily formed at a desired deposition rate.

Although this embodiment shows an example of forming an a-3iGe:H film, other deposited films having a plurality of compositions can be formed by changing the gas type and the like.

Table 1 λ Town 11 Run Using the deposited film forming apparatus shown in Figure 5, an amorphous silicon carbide film (hereinafter abbreviated as a-3iC:H film) was formed.
Let us describe an example in which .

From the gas inlet pipes 508.511.514, respectively H2
Introduced 250acc of filament 501゜504
．． 507 was heated to 1800° C. to generate active species of H8. At the same time, 150 sccm of SiJ'4 was introduced from the gas introduction pipes 509 and 512, and the filaments 502 and 505 were heated to 1600°C.
active species were generated. Furthermore, at the same time, the gas introduction pipe 510.
513 to 100 sccm of CH, respectively,
Filament 503°506 is heated to 1700°C,
Active species of Ha were generated.

Then, the H8 active species, 54 tFh active species, and CHa active species generated by the above method are introduced into the film forming space 515 from the rectangular gas inlet separated by a partition plate, and the internal pressure is 0.
A stainless steel substrate 51G mixed at 3 Torr, reacted with each active species, and heated to 280°C with an infrared lamp 519.
a-3iC because it is hyperactive at a speed of 4cm/s+fn
:H film was deposited. Under the same conditions as above, the aSiC film was heated to 280°C without moving the roll.20 value x 20c
As a result of depositing on 11 glass substrates, the deposition rate was 8.9 people/
see, Egopt = 1.95 e V, σ#-
1.8X10-'Ω-11-1, σ, + -8,3X
10-”Ω-+1-1.The deposited a
The distribution of the deposition rate of the SiC:H film on the substrate is within 3.5%, the distribution of the composition ratio A uniform a-3iC:H film could be formed over the length.

As described above, using the deposited film forming apparatus of the present invention, a high-quality a-5iC:l (film) could be deposited uniformly over a large area. Also, active species of H2, active species of 5irF*, and C1]
Since the amount of active species produced in , can be controlled independently, the composition ratio of the a-3iC:H film can be changed to produce an a-3iC:H film with a desired optical band gap without deteriorating the film quality. , it was possible to deposit at the desired deposition rate.

The above-mentioned examples are examples in which deposited films doped with impurities or alloy-based deposited films are formed, but of course, the deposited film forming apparatus of the present invention can be used to form a deposited film of a single composition to a large extent. It can also be formed uniformly over the area.

[Effects of the Invention]' The deposited film forming apparatus of the present invention activates a plurality of film-forming raw material gases with separate elongated filaments that generate heat, and transfers each of the activated film-forming raw material gases to the filament. Transported in a direction perpendicular to the long axis direction, and installed in a rectangular or elliptical shape with the length of the long axis at least twice the length of the short axis and at a distance less than the length of the short axis, and installed in parallel. The gas is introduced into the film forming space through the multiple gas inlets and mixed.
By allowing the activated film-forming raw material gases to react with each other, a uniform film π can be created over a large area while maintaining the advantage of activating multiple film-forming raw material gases independently.
It became possible to form a deposited film of

In other words, by activating multiple film-forming raw material gases independently, the activation rate of each film-forming raw material gas is independently controlled, and the amount of production and reaction of each active species is controlled. In the case of a deposited film consisting of multiple compositional components, it is possible to delicately control the quality of the film and the ratio of the compositional components, thereby expanding the selectivity of the source gas and expanding the range of film formation conditions. By transporting the raw material gas for film formation in the direction perpendicular to the long axis of the long filament, active species can be uniformly generated over a wide area in a long filament, and the active species can be formed in a rectangular shape. Alternatively, it has an elliptical shape, the length of the long axis is more than twice the length of the short axis, and the gas is activated into the film forming space from multiple gas inlets installed in parallel and close to each other at a distance less than the length of the short axis. By introducing and reacting each of the raw material gases for film formation, it has become possible to form a deposited film of uniform quality over a large area at low cost.

Furthermore, by moving the substrate in the short axis direction, it has become possible to form a deposited film of uniform quality over a large area with a wide width and desired length.

[Brief explanation of the drawing]

FIG. 1 is a sectional view in the short axis direction of a basic example of the deposited film forming apparatus of the present invention. FIG. 2 is a diagram showing the shape of the gas inlet of the deposited film forming apparatus of the present invention. FIG. 3 is a cross-sectional view in the short axis direction of an example of the deposited film forming apparatus of the present invention. FIG. 4 is an explanatory view of the inside of the deposited film forming apparatus shown in FIG. 3, viewed from above. FIG. 5 is a cross-sectional view in the short axis direction of an example of the deposited film forming apparatus of the present invention. FIG. 6 is a schematic diagram of an example of a conventional deposited film forming apparatus. FIG. 7 is a graph of the composition ratio distribution of a deposited film formed by the deposited film forming apparatus of the present invention, which corresponds to the position of the gas inlet shown in FIG. FIG. 8 shows the tff formed by the deposited film forming apparatus of the present invention.
1 is a graph showing the relationship between changes in the composition ratio of the laminated film and the shape of the gas inlet. FIG. 9 shows a deposit formed by the deposited film forming apparatus of the present invention.
1 is a graph showing the relationship between changes in the composition ratio of the L film and the arrangement of gas inlet ports. In Fig. 1.2, 101-108...Ficiment, 109-112...Gas introduction pipe, 113-1
16... Gas inlet, 117... Film forming space, 118
...Substrate, 119...Substrate holder, 120...
Substrate heating heater, 121... gas exhaust port, 122
... Board transfer port, 123-127 ... Partition plate, 2
i~204...Gas inlet. In FIG. 3, 301 to 310... filament;
311-320... Gas introduction pipe, 321... Substrate, 322... Substrate holder, 323... Infrared lamp, 324... Film forming space, 325... Substrate transport mechanism, 326... Gas exhaust port, 327.328...Substrate transfer port. In Fig. 4.5.6, 401-410... filament, 411-421... partition plate, 501-50
7...Tungsten filament, 508-514.
...Gas introduction pipe, 515... Film forming space, 516...
Board, 517... Board feed roller, 51B...
・Substrate take-up roller, 519...infrared lamp,
520... Gas exhaust port, 521... Substrate roller carrying-in chamber, 522... Substrate roller carrying-out chamber, 523...
Preheating chamber, 524...Substrate cooling chamber, 601 to 603
... Active species introduction nozzle, 604 ... Film forming space, 60
5... Film formation chamber, 606... Substrate, 607
...Susceptor, 608...Gas exhaust port. Fig. Fig. Fig. α Fig. Fig. Fig. Alpha

Claims (2)

[Claims] (1) Activate two or more types of film-forming raw material gases through decomposition energy in separate activation spaces, and deposit the activated gases through separate gas inlets. A deposited film forming apparatus in which gases introduced into a space and mixed together and activated near the surface of a substrate installed in the film forming space react with each other to form a deposited film on the substrate. Each of the plurality of activation spaces is equipped with a filament made of a metal material having a catalytic action, and each of the film-forming raw material gases is activated to a plasma state by the heat generation effect caused by energization of the filament. and each activated gas is transported in a direction perpendicular to the long axis direction of the filament, and each of the gas inlets is arranged such that the length of the long axis is at least twice as long as the short axis. 1. A deposited film forming apparatus characterized in that the device has a rectangular or elliptical shape, and the plurality of gas inlets are arranged in parallel and close to each other at a distance less than or equal to the length of the minor axis. (2) The deposited film forming apparatus according to claim (1), further comprising means for moving the base body in a direction perpendicular to the long axis direction of the rectangular or oval gas inlet.