JPH0225526B2 - - Google Patents
Info
- Publication number
- JPH0225526B2 JPH0225526B2 JP12217381A JP12217381A JPH0225526B2 JP H0225526 B2 JPH0225526 B2 JP H0225526B2 JP 12217381 A JP12217381 A JP 12217381A JP 12217381 A JP12217381 A JP 12217381A JP H0225526 B2 JPH0225526 B2 JP H0225526B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- gate
- source
- mos
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12217381A JPS5822425A (ja) | 1981-08-04 | 1981-08-04 | 基準電圧発生回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12217381A JPS5822425A (ja) | 1981-08-04 | 1981-08-04 | 基準電圧発生回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5822425A JPS5822425A (ja) | 1983-02-09 |
JPH0225526B2 true JPH0225526B2 (enrdf_load_stackoverflow) | 1990-06-04 |
Family
ID=14829373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12217381A Granted JPS5822425A (ja) | 1981-08-04 | 1981-08-04 | 基準電圧発生回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5822425A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663584B1 (en) * | 1985-06-10 | 1996-05-21 | Toshiba Kk | Intermediate potential generation circuit |
US4789825A (en) * | 1986-05-14 | 1988-12-06 | American Telephone And Telegraph Co., At&T Bell Laboratories | Integrated circuit with channel length indicator |
JP2586011B2 (ja) * | 1986-08-28 | 1997-02-26 | セイコーエプソン株式会社 | 電圧発生回路 |
-
1981
- 1981-08-04 JP JP12217381A patent/JPS5822425A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5822425A (ja) | 1983-02-09 |