JPH02250965A - Ion beam sputtering device - Google Patents

Abstract

PURPOSE:To form a thin film pattern on the surface of a specimen simultaneously with sputtering and to obviate the necessity of a photolithography stage by providing a mask holder for the position halfway between a target from which sputter atoms are sputtered and a specimen holder. CONSTITUTION:A target 5 is irradiated with ion beam 4 and sputter atoms 6 are sputtered out. These atoms 6 are allowed to adhere to the surface of a specimen 8 held by a specimen holder 10, by which a thin film is formed. In the above ion beam sputtering device, a mask holder 9 is provided between the above target 5 and the specimen holder 10, and the sputter atoms 6 passed through the openings of a mask 7 are allowed to adhere to the specimen 8, by which a thin film pattern 11 can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion beam sputtering apparatus for producing thin films, which is used in producing circuit boards, liquid crystal display boards, etc. used in electronic devices such as computers.

[Conventional technology]

Conventionally, this type of ion beam sputtering equipment was configured so that the sputtered atoms ejected from the target due to the collision of accelerated ions fly and adhere to the entire surface of the sample, forming a thin film on the entire surface of the sample. This is common, and even when a mask having a desired pattern is provided on the sample surface, the mask is provided in close contact with the sample surface.

[Problem to be solved by the invention]

When a thin film is formed on the entire surface of a sample using the conventional ion beam sputtering apparatus described above, it is necessary to form a pattern using photolithography or plating, and the unnecessary thin film can be removed by wet or dry etching. had to be removed.

In addition, when the film is formed by bringing the sample and mask into close contact with each other in advance, the sputtered film 12 attached to the side wall of the mask 7 is continuous with the thin film pattern 12A on the surface of the sample 8, as shown in FIG. 2(a). As shown in FIG. 2(b), when the mask 7 and the sample 8 are separated after the thin film pattern is formed, the thin film pattern 12A may be peeled off or the sputtered film 12 on the side wall may remain on the surface of the sample 8. There are drawbacks. Furthermore, as shown in FIG. 3, even if the mask 7 is cleaned and the thin film is removed, the sputtered film 12 tends to remain on the sidewalls, so if it is used repeatedly, the dimensional accuracy of the mask 7 deteriorates, and the precision of the thin film pattern deteriorates. There was a drawback.

[Means to solve the problem]

The ion beam sputtering apparatus of the present invention is an ion beam sputtering apparatus that irradiates a target with an ion beam to sputter and forms a film on the surface of a sample held in a sample holder. It has been established.

〔Example〕

FIG. 1 is a sectional view showing one embodiment of the present invention.

An ion beam 4 generated by an ion source 1 is accelerated and focused by an acceleration and focusing electrode 2, and is irradiated onto a target 5 in a chamber 3. Then, due to the collision energy, sputtered atoms 6 fly out from the target 5 toward the sample 8 held in the sample holder 10. These sputtered atoms 6 have kinetic energy, and the inside of the chamber 3 is in a high vacuum compared to a magnetron sputtering device. There is a space between the target 5 and the sample holder 10, where there is less scattering by the discharge gas and it flies almost linearly towards the sample.
A mask holder 9 is provided for holding a mask 7 that has been microfabricated and patterned using a laser or the like. Therefore, the sputtered atoms 6 pass through the opening of the mask 7, collide with and adhere to the sample 8, and form a thin film pattern 11.

In this way, a thin film pattern similar to the pattern provided on the mask 7 is formed on the surface of the sample 8. Therefore, when removing the sample after forming the thin film pattern 11, the thin film pattern 11 will not peel off as in the conventional case, and since the adhesion of sputtered atoms 6 to the side wall of the mask 7 will be reduced, the sputtered film will be attached to this side wall after cleaning. will no longer remain. or,
By changing the mask, thin film patterns corresponding to various mask patterns can be formed on the sample surface.

〔Effect of the invention〕

As described above, the present invention has the advantage that by providing a mask holder at an intermediate position between the target and the sample holder of an ion beam sputtering apparatus, a thin film pattern can be easily formed on the sample surface at the same time as sputtering. This eliminates the need for a photolithography process compared to the conventional thin film pattern forming method that does not use a mask, so the thin film pattern forming process can be shortened. Furthermore, compared to a conventional thin film pattern forming method using a mask, peeling of the thin film pattern can be eliminated, and deterioration of the dimensional accuracy of the mask can be prevented.

FIG. 2 is a cross-sectional view of a sample and a mask for explanation.

1... Ion source, 2... Acceleration/focusing electrode, 3...
Chamber, 4... Ion beam, 5... Target, 6... Sputtered atoms, 7... Mask, 8...
Sample, 9... mask holder, 10... sample holder,
11... Thin film pattern, 12... Sputtered film.

Claims (1)

[Claims] Irradiates the target with an ion beam and sputters it,
An ion beam sputtering apparatus for forming a film on the surface of a sample held by a sample holder, characterized in that a mask holder is provided at an intermediate position between the target and the sample holder.