JPH0445266A - Laser sputtering system - Google Patents
Laser sputtering systemInfo
- Publication number
- JPH0445266A JPH0445266A JP15367090A JP15367090A JPH0445266A JP H0445266 A JPH0445266 A JP H0445266A JP 15367090 A JP15367090 A JP 15367090A JP 15367090 A JP15367090 A JP 15367090A JP H0445266 A JPH0445266 A JP H0445266A
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- laser
- substrate
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 abstract description 15
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、薄膜デバイス等の薄膜形成を行うレーザを用
いたスパッタリング装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sputtering apparatus using a laser for forming thin films such as thin film devices.
従来の技術
従来、この種のレーザを用いたスパッタリング装置は、
筆者コムラ氏他によるジャパニーズ・ジャーナル・オブ
・アプライド・フィジックスの１９８８年版に示されて
いるようなものがあり、第４図のような構成になってい
る。Conventional technology Conventionally, sputtering equipment using this type of laser was
There is something like the one shown in the 1988 edition of the Japanese Journal of Applied Physics by the author, Mr. Komura et al., and it is structured as shown in Figure 4.
本従来例の構成は、真空槽１５内にバルク状のターゲッ
ト１６と、ターゲット１６に対向して基板台１７を設け
て、基板台１７の上には基板１８を取り付け、可視光の
ＱスイッチＹＡＧレーザの第２高周波（波長５３２ ｎ
ｍ ）レーザ光１９をレンズ２０で集光し、真空槽１
５に取り付けられた真空封じ窓２１を通して、ターゲッ
ト１６に照射し、基板１８上にターゲット１６の材料の
材料の薄膜を堆積させるものである。The configuration of this conventional example includes a bulk target 16 in a vacuum chamber 15, a substrate stand 17 facing the target 16, a substrate 18 mounted on the substrate stand 17, and a visible light Q switch YAG. The second high frequency of the laser (wavelength 532n
m) The laser beam 19 is focused by the lens 20, and the vacuum chamber 1 is
The target 16 is irradiated through a vacuum sealed window 21 attached to the substrate 5 to deposit a thin film of the material of the target 16 on the substrate 18.
発明が解決しようとする課題
しかし、このような構成のものでは、レーザ光照射時に
ターゲットの厚さ方向の温度勾配が太き（なる。その結
果、ターゲットから噴出するスパッタ粒子の大きさを十
分に制御することが出来ず、例えば誘電体材料を用いて
形成した薄膜中に直径０．１〜数μｍの粒塊が混入し、
膜特性を低下させるという課題のあることが判明した。Problems to be Solved by the Invention However, with such a configuration, the temperature gradient in the thickness direction of the target becomes thick during laser beam irradiation.As a result, the size of sputtered particles ejected from the target cannot be sufficiently For example, particles with a diameter of 0.1 to several μm may be mixed into a thin film formed using a dielectric material.
It was found that there was a problem in that the film properties deteriorated.
本発明は上記した課題に鑑み、膜構造の制御を精度良（
行うことのできるレーザ・スパッタリング装置を提供す
るものである。In view of the above-mentioned problems, the present invention provides highly accurate control of membrane structure (
The present invention provides a laser sputtering device that can perform the following steps.
課題を解決するための手段
上記目的を達成するために本発明のレーザ・スパッタリ
ング装置は、レーザ発振器から出射されたパルス・レー
ザ光を真空槽内に設けられた厚さ１０μｍ以下のターゲ
ット上に照射させ基板上に膜形成させるもので、厚さの
興なる複数のターゲットをレーザ照射位置に供給するこ
とが可能で、さらにターゲットはターゲット材料よりも
熱伝導性の悪い材料にて支持されるものである。Means for Solving the Problems In order to achieve the above object, the laser sputtering apparatus of the present invention irradiates a target with a thickness of 10 μm or less provided in a vacuum chamber with pulsed laser light emitted from a laser oscillator. It forms a film on a substrate, and it is possible to supply multiple targets of varying thickness to the laser irradiation position, and the targets are supported by a material with poorer thermal conductivity than the target material. be.
作 用
上記構成をなすことにより、ターゲットのレーザ光を照
射された部分は温度上昇するが、厚さが１０μｍ以下と
薄いため厚さ方向の温度勾配もバルク型ターゲットに比
べ小さい。例えば厚さ０．０５μｍのＮｉターゲットに
５．５Ｘ１０ Ｗ／−のレーザ光を照射した時、表裏
の温度差はほとんどない。また本発明のターゲットから
噴出するスパッタ粒子の形状は、噴出時の温度が高くな
るにつれ、金属ターゲットの場合には、直径数μｍ以下
の球状から平板状、さらに微粒子状、膜状へと変化する
。したがって、ターゲット内の温度勾配を小さくするこ
とによって、スパッタ粒子の形状をレーザ照射条件によ
って制御することが可能になる。また膜厚が異なると、
レーザ照射時の温度上昇が同じとなる条件でも、スパッ
タ粒子の形態は同じでも大きさに差異がみられるので、
膜圧の異なるターゲットを供給可能とすることで、スパ
ッタ粒子によって形成される膜構造の制御精度がさらに
広（なる。Operation With the above configuration, the temperature of the portion of the target irradiated with the laser beam increases, but since the thickness is as thin as 10 μm or less, the temperature gradient in the thickness direction is also smaller than that of a bulk type target. For example, when a Ni target with a thickness of 0.05 μm is irradiated with a laser beam of 5.5×10 W/−, there is almost no difference in temperature between the front and back surfaces. In addition, as the temperature at the time of sputtering increases, the shape of the sputtered particles ejected from the target of the present invention changes from a spherical shape with a diameter of several μm or less to a flat plate shape, and further to a fine particle shape and a film shape in the case of a metal target. . Therefore, by reducing the temperature gradient within the target, the shape of sputtered particles can be controlled by laser irradiation conditions. Also, if the film thickness is different,
Even under conditions where the temperature rise during laser irradiation is the same, there are differences in size even if the sputtered particles have the same morphology.
By being able to supply targets with different film thicknesses, the control accuracy of the film structure formed by sputtered particles is further increased.
実施例
以下、本発明の実施例のレーザ・スパッタリング装置に
ついて、図面を参照しながら説明する。EXAMPLE Hereinafter, a laser sputtering apparatus according to an example of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例におけるレーザ・スパッ
タリング装置の構成図を示すものである。第１図におい
て、１はレーザ発振器、２はパルス化されたレーザ光、
３は反射鏡、４は集光レンズ、５は真空封じ窓、６は真
空槽、７ａと７ｂは蒸着フィルム、８は基板、９は走行
ロールである。レーザ発振器ｌから出射され、たパルス
化されたレーザ光２は、反射鏡３によって集光レンズ４
に誘導され、真空封じ窓５を通して真空槽６内に設けら
れた蒸着フィルム７ａに集光・照射される。蒸着フィル
ム７ａのターゲットでレーザ光の照射された部分は急激
に温度上昇し、スパッタリング作用により飛び出した粒
子によって、基板８上に堆積層が形成される。蒸着フィ
ルム７ａを順次移動させこのプロセスが繰り返されるこ
とで膜形成がなされる。蒸着フィルム７ａまたは７ｂの
ターゲットの厚さは１０μｍ以下とすることによって、
レーザ照射時の厚さ方向の温度勾配を小さく出来、基板
８上に堆積するスパッタリング粒子の形状も良好な制御
が可能となる。また膜厚１μｍ以下ではターゲット単体
での保持は困難な場合が多いので、片面をターゲット材
料よりも熱伝導性の悪い材料で支持することで、レーザ
照射時の温度勾配を大きくすることな（、ターゲットを
供給することができる。また、ターゲット膜厚に寄因し
てスパッタリング粒子の形状も影響をうけるので、種々
な膜厚のターゲットをレーザ加工点に移動させることで
、より高精度なスパッタリング粒子形状の制御が行える
。FIG. 1 shows a configuration diagram of a laser sputtering apparatus according to a first embodiment of the present invention. In FIG. 1, 1 is a laser oscillator, 2 is a pulsed laser beam,
3 is a reflecting mirror, 4 is a condensing lens, 5 is a vacuum sealing window, 6 is a vacuum chamber, 7a and 7b are vapor deposited films, 8 is a substrate, and 9 is a running roll. A pulsed laser beam 2 emitted from a laser oscillator 1 is passed through a condensing lens 4 by a reflecting mirror 3.
The light is focused and irradiated onto the vapor deposited film 7a provided in the vacuum chamber 6 through the vacuum sealing window 5. The temperature of the target portion of the vapor deposition film 7a that is irradiated with the laser beam rises rapidly, and a deposited layer is formed on the substrate 8 by particles ejected by the sputtering action. A film is formed by sequentially moving the vapor deposited film 7a and repeating this process. By setting the target thickness of the vapor deposition film 7a or 7b to 10 μm or less,
The temperature gradient in the thickness direction during laser irradiation can be reduced, and the shape of sputtered particles deposited on the substrate 8 can also be well controlled. Furthermore, if the film thickness is less than 1 μm, it is often difficult to hold the target alone, so by supporting one side with a material that has poorer thermal conductivity than the target material, the temperature gradient during laser irradiation can be avoided ( The target can be supplied.Also, since the shape of the sputtered particles is affected by the target film thickness, by moving targets with various film thicknesses to the laser processing point, more precise sputtering particles can be obtained. The shape can be controlled.
第２図は本発明の第２の実施例におけるレーザ・スパッ
タリング装置の構成図を示すものである。第２図におい
て、１０ａと１０ｂはガラス基板上にそれぞれ膜厚を変
えて薄膜の形成されたターゲット、１１はターゲットの
加工位置への移動機構、１２はスパッタ後のターゲット
である。FIG. 2 shows a configuration diagram of a laser sputtering apparatus in a second embodiment of the present invention. In FIG. 2, 10a and 10b are targets on which thin films of different thicknesses are formed on glass substrates, 11 is a mechanism for moving the target to a processing position, and 12 is a target after sputtering.
ターゲット１０ａまたは１０ｂは移動機構１１によって
レーザ光照射地点に供給され、スパッタ後のターゲット
１２は回収される。他の動作は第１の実施例と同様であ
る。以上のように、ターゲットの基板がガラス板を用い
ると第１の実施例における有機フィルムを用いた場合に
比べ融点が高く、基板の損傷も軽減されるため、スパッ
タ膜への基板材料等の不純物の混入も少な（することが
できる。The target 10a or 10b is supplied to a laser beam irradiation point by a moving mechanism 11, and the sputtered target 12 is recovered. Other operations are similar to the first embodiment. As described above, when a glass plate is used as the target substrate, the melting point is higher than when an organic film is used in the first embodiment, and damage to the substrate is also reduced, so impurities such as the substrate material to the sputtered film are prevented. It is possible to have a small amount of contamination.
第３図は本発明の第３の実施例におけるレーザ・スパッ
タリング装置の構成図を示すものである。第３図におい
て、１３は蒸着装置、１４はセラミック回転基板である
。蒸着装置１３から回転するセラミック回転基板上で所
定の薄膜を形成するようにターゲット材料が供給される
。回転基板１４上に形成されたターゲットにはレーザ光
が照射されスパッタ粒子が飛び出すとともに、このプロ
セスが繰り返されて基板８上にはスパッタ膜が形成され
る。他の動作は第１及び第２の実施例と同様である。以
上のように、回転するセラミック基板上にターゲット薄
膜を形成する方式は、ターゲット材料の供給料とセラミ
ック基板の回転数との組み合せにより、ターゲット膜厚
を自由に設定することができる。FIG. 3 shows a configuration diagram of a laser sputtering apparatus according to a third embodiment of the present invention. In FIG. 3, 13 is a vapor deposition device, and 14 is a ceramic rotating substrate. A target material is supplied from the vapor deposition device 13 so as to form a predetermined thin film on a rotating ceramic rotating substrate. The target formed on the rotating substrate 14 is irradiated with laser light and sputtered particles fly out, and this process is repeated to form a sputtered film on the substrate 8. Other operations are similar to the first and second embodiments. As described above, in the method of forming a target thin film on a rotating ceramic substrate, the target film thickness can be freely set by combining the supply of target material and the rotation speed of the ceramic substrate.
発明の効果
以上のように本発明によれば、厚さ１０μｍ以下の膜厚
の興なるターゲットにレーザ光を照射することにより、
ターゲットの厚さ方向の温度勾配を小さく出来る結果、
スパッタ粒子の形状をレーザ照射条件によって制御する
ことが可能となる。Effects of the Invention As described above, according to the present invention, by irradiating a target with a film thickness of 10 μm or less with a laser beam,
As a result of being able to reduce the temperature gradient in the target thickness direction,
The shape of sputtered particles can be controlled by laser irradiation conditions.
さらに、厚さの異なる複数のターゲットを供給可能な機
構を設けることにより、膜厚に依存したスパッタ粒子の
形状を制御も可能となり、膜構造の制御範囲が広（なる
。Furthermore, by providing a mechanism that can supply a plurality of targets with different thicknesses, it becomes possible to control the shape of sputtered particles depending on the film thickness, and the control range of the film structure becomes wider.
第１図は本発明の第１の実施例におけるレーザ・スパッ
タリング装置の構成図、第２図は本発明の第２の実施例
におけるレーザ・スパッタリング装置の構成図、第３図
は本発明の第３の実施例におけるレーザ・スパッタリン
グ装置の構成図、第４図は従来のレーザ・スパッタリン
グ装置の構成図である。
２・・・・・・パルス・レーザ光、７ａ、７ｂ・・・・
・・蒸着フィルム、９・・・・・・走行ロール、１０ａ
、１０ｂ・・・・・・ガラス基板ターゲット、１１・・
・・・・移動機構、１３・・・・・・蒸着装置、１４・
・・・・・セラミック回転基板。
代理人の氏名 弁理士 粟野重孝 ほか１名第
図
Ａミーイナロ−）Ｌ
１〜１０ｂ−−刀うス養Ａ友タゲ、７Ｙ−ネ多勧ａ嬶
第
図
３−菓１」
１４− −じうξ・ノリＦＩＬ表勿（FIG. 1 is a block diagram of a laser sputtering apparatus according to a first embodiment of the present invention, FIG. 2 is a block diagram of a laser sputtering apparatus according to a second embodiment of the present invention, and FIG. 3 is a block diagram of a laser sputtering apparatus according to a second embodiment of the present invention. FIG. 4 is a block diagram of a conventional laser sputtering apparatus. 2...Pulse laser light, 7a, 7b...
... Deposited film, 9... Running roll, 10a
, 10b...Glass substrate target, 11...
...Moving mechanism, 13... Vapor deposition device, 14.
... Ceramic rotating board. Name of agent Patent attorney Shigetaka Awano and one other person ξ・Nori FIL table of course (
Claims (3)
真空槽内に設けられた厚さ１０μｍ以下のターゲット上
に照射させ、前記ターゲットと対向した基板上に膜形成
を行うレーザ・スパッタリング装置。(1) A laser sputtering device that irradiates pulsed laser light emitted from a laser oscillator onto a target with a thickness of 10 μm or less provided in a vacuum chamber to form a film on a substrate facing the target.
されることを特徴とする請求項１記載のレーザ・スパッ
タリング装置。(2) The laser sputtering apparatus according to claim 1, wherein targets having different thicknesses are supplied to the laser irradiation position.
い材料にて支持されたことを特徴とする請求項１記載の
レーザ・スパッタリング装置。(3) The laser sputtering apparatus according to claim 1, wherein the target is supported by a material having poorer thermal conductivity than the target material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15367090A JP2890686B2 (en) | 1990-06-12 | 1990-06-12 | Laser sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15367090A JP2890686B2 (en) | 1990-06-12 | 1990-06-12 | Laser sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0445266A true JPH0445266A (en) | 1992-02-14 |
| JP2890686B2 JP2890686B2 (en) | 1999-05-17 |
Family
ID=15567609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15367090A Expired - Fee Related JP2890686B2 (en) | 1990-06-12 | 1990-06-12 | Laser sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2890686B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011233890A (en) * | 2010-04-28 | 2011-11-17 | Pratt & Whitney Rocketdyne Inc | Substrate having laser sintered bottom plate |
| JP2014234519A (en) * | 2013-05-30 | 2014-12-15 | 国立大学法人東京工業大学 | Film deposition apparatus |
-
1990
- 1990-06-12 JP JP15367090A patent/JP2890686B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011233890A (en) * | 2010-04-28 | 2011-11-17 | Pratt & Whitney Rocketdyne Inc | Substrate having laser sintered bottom plate |
| JP2014234519A (en) * | 2013-05-30 | 2014-12-15 | 国立大学法人東京工業大学 | Film deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2890686B2 (en) | 1999-05-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |