JPH02247374A - Crucible for evaporation source and thin film formation using same - Google Patents
Crucible for evaporation source and thin film formation using sameInfo
- Publication number
- JPH02247374A JPH02247374A JP6610689A JP6610689A JPH02247374A JP H02247374 A JPH02247374 A JP H02247374A JP 6610689 A JP6610689 A JP 6610689A JP 6610689 A JP6610689 A JP 6610689A JP H02247374 A JPH02247374 A JP H02247374A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- vapor deposition
- vapor
- thin film
- deposition material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000001704 evaporation Methods 0.000 title claims description 10
- 230000008020 evaporation Effects 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000007740 vapor deposition Methods 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000007736 thin film deposition technique Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 238000011109 contamination Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は蒸発源用るつぼと、それ１こよる薄膜成膜方法
に係り、特に高品質の薄膜を安定して成膜できるるつぼ
構造及び薄膜成膜方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a crucible for an evaporation source and a method for forming a thin film using the crucible, and particularly to a crucible structure and thin film that can stably form a high-quality thin film. Regarding a film forming method.
従来、物質を加熱蒸発させて薄膜形成を行う真空蒸着、
クラスタイオンビーム蒸着法等においては、物質の容器
としてるつぼを用いるのが一般的であり、この代表的な
ものとしては、特開昭５９−２０５６４４ に記載さ
れている。この方法は、るつぼ本体を、内部に収容する
蒸着物質と反応しにくい物質で形成し、本体の外表面を
導電性材料で被覆するもので、この場合の加熱方法とし
ては電子衝撃法が一般的である。Conventionally, vacuum evaporation, which forms a thin film by heating and evaporating a substance,
In the cluster ion beam evaporation method, etc., a crucible is generally used as a container for the substance, and a typical crucible is described in Japanese Patent Laid-Open No. 59-205644. In this method, the crucible body is formed of a material that does not easily react with the vapor deposition substance contained inside, and the outer surface of the crucible body is coated with a conductive material.The heating method in this case is generally the electron impact method. It is.
本方法は、るつぼ本体が蒸着物質と反応しにくい物質な
ので、蒸着物への不純物混入が少なく、又るつぼ本体の
破壊等もなく、品質の良い膜が比較的安定して成膜でき
る。他方、例えばセラミック系等の物質では、絶縁性で
ある為、加熱方法として電子衝撃法を用いることが出来
ないので、外表面を導電性材料で被へすることにより、
本被覆部分を電子衝撃法で加熱することにより、るつぼ
本体を間接的に加熱し、内部の蒸着物質を溶融。In this method, since the crucible body is made of a material that does not easily react with the vapor deposition material, there is little impurity mixed into the vapor deposited material, there is no destruction of the crucible body, and a high-quality film can be formed relatively stably. On the other hand, for example, materials such as ceramics are insulating and cannot be heated using the electron impact method. Therefore, by covering the outer surface with a conductive material,
By heating the coated part using the electron impact method, the crucible body is indirectly heated and the deposited material inside is melted.
蒸発させるものである。しかしながら、本方法では、る
つぼ本体は外側の被覆材からの熱を受けての加熱であり
、内部の蒸着物質を加熱、溶融し必要な圧力の蒸気、あ
るいは所定の膜形成速度を得る目的に鑑みて必ずしも効
率の良い方法ではない。It evaporates. However, in this method, the crucible body is heated by receiving heat from the outer coating material, and the purpose of heating and melting the vapor deposition substance inside to obtain steam at the necessary pressure or a predetermined film formation rate is considered. This is not necessarily an efficient method.
例えば、クラスタイオンビーム法では、高温すなわち高
圧の蒸気をるつぼ内に効率良（作り出す必要があり、従
来の方法では安定した成膜は期特出米ない。本発明の目
的は、かかる欠点を解消し、蒸着物への不純物混入のな
い、高圧の蒸気をるつぼ内に効率良く作り出するつぼ構
造を提供することにある。For example, in the cluster ion beam method, it is necessary to efficiently create high-temperature, high-pressure steam in a crucible, and stable film formation is not particularly possible with conventional methods.The purpose of the present invention is to eliminate such drawbacks. Another object of the present invention is to provide a crucible structure that efficiently produces high-pressure steam in the crucible without contaminating the deposited material with impurities.
本発明の他の目的は、るつぼを用いて、高品質の薄膜を
安定して成膜出来る、薄膜成膜方法を提供することにあ
る。Another object of the present invention is to provide a thin film forming method that can stably form a high quality thin film using a crucible.
本発明の目的は、効率良く加熱されるイ）つば本体中に
、蒸着物と反応しに（い物質から成ｖ′）溶融部を形成
する容器をはめ込み、その上方に蒸気加熱部を設けるこ
とにより達成される。The purpose of the present invention is to heat efficiently (a) a container that reacts with the vapor deposits to form a melting part (made of a substance) is fitted into the collar body, and a steam heating part is provided above the container. This is achieved by
本発明の他の目的は、上記構造のるつぼと、薄膜を形成
すべき基板を真空槽内に配置し、前記イ）つぼを加熱し
蒸着物質を蒸気化す−ることによって達成される。Another object of the present invention is achieved by arranging the crucible having the above structure and the substrate on which the thin film is to be formed in a vacuum chamber, and performing (a) heating the crucible to vaporize the deposition material.
るつぼ内部にはめ込まれた容器は、るつぼ本体からの熱
を受けて蒸着物を溶融し、蒸気加熱部においてはるつぼ
本体番こより蒸着物の蒸気がｉｒｔ接加熱加熱るので、
高圧の蒸気が効率良く生成される。The container fitted inside the crucible melts the deposit by receiving heat from the crucible body, and in the steam heating section, the steam of the deposit is heated by IRT heating from the crucible body.
High-pressure steam is efficiently generated.
したがって、本るつぼを用いた薄膜成膜方法番こより高
品質の薄膜が安定して成膜できる。Therefore, a thin film of higher quality can be stably deposited using the thin film deposition method using the present crucible.
以下、本発明の実施例を図によって説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例たるクラスタイオンビーム
蒸着用るつぼの代表的な構造を示す縦断面図である。１
はるつぼ本体、２はるつぼ本体と共にるつぼを構成する
ふ５た、５はノズル、４はるつぼ本体内部にはめ込まれ
た副るつぼ、５は蒸着物質、６は蒸気加熱部、７は副る
つぼ上部に設けられた張出し部である。るつぼ本体１は
、例えばカーボングラファイト等の導電性物質から成っ
ており、電子衝撃法によって、効率良く充分高温に加熱
される。副るつぼ４は、蒸着物と反応しに（い物質、例
えばセラミック、ボロンナイトライドなどから成り、高
さはるつぼ本体１より小さく、その外壁はるつぼ本体１
の内壁ζこ密着する形状９寸法になっており、る、つぼ
本体１の内部着こ図の如くはめ込まれる。したかって、
るつぼ本体１の内部には、副るつぼ４の部分とその上方
に空間すなわち蒸気加熱部６が出来る。副るつぼ４は、
外側に密着しているるつぼ本体１により加熱さ１′１６
蒸窮物質５が溶融し、上方の蒸気加熱部６に蒸着物質の
蒸気が満たされる。蒸気加熱部６は、導電材質であるる
つぼ本体１の内壁に直接接しているので、蒸気は副るつ
ぼ４内よりも更に高温に熱千５らεＬ高圧の蒸気となり
、ノズル３よりクラスタ（塊状原子集団）となって噴出
される。以上の説明で明らかなように、本構造によれば
、蒸着物質５への不純物混入がなくなり、又、副るつぼ
４の温度がそれほど上がらない場合でも充分高圧の蒸気
が生成されることになる。尚、副るつぼ４の上部の張出
し部７は蒸着物質５の突沸による、るつぼ本体１の上部
への蒸着物付着を防ぐためのものであり、成膜を安定し
て行う上で効果が大きい。FIG. 1 is a longitudinal sectional view showing a typical structure of a crucible for cluster ion beam evaporation, which is an embodiment of the present invention. 1
A crucible main body, 2 a lid 5 which constitutes the crucible together with the crucible main body, 5 a nozzle, 4 a sub-crucible fitted inside the crucible main body, 5 a vapor deposition substance, 6 a steam heating section, 7 an upper part of the sub-crucible This is an overhang provided. The crucible body 1 is made of a conductive material such as carbon graphite, and is efficiently heated to a sufficiently high temperature by an electron impact method. The sub-crucible 4 is made of a material that does not react with the deposit, such as ceramic or boron nitride, has a height smaller than the crucible main body 1, and has an outer wall that is smaller than the crucible main body 1.
It has a shape of 9 dimensions that fits tightly against the inner wall ζ of the vase body 1, and is fitted into the inside of the vase body 1 as shown in the figure. I wanted to,
Inside the crucible body 1, a space, that is, a steam heating section 6, is formed in the sub-crucible 4 portion and above it. Sub-crucible 4 is
Heated by the crucible body 1 that is in close contact with the outside 1'16
The vaporized material 5 is melted, and the upper steam heating section 6 is filled with the vapor of the vaporized material. Since the steam heating section 6 is in direct contact with the inner wall of the crucible body 1 which is made of a conductive material, the steam is heated to a higher temperature than the inside of the sub-crucible 4 and becomes high-pressure steam. It is ejected in groups. As is clear from the above description, according to this structure, impurities are not mixed into the vapor deposition material 5, and even if the temperature of the sub-crucible 4 does not rise significantly, sufficiently high-pressure steam is generated. The projecting portion 7 at the upper part of the sub-crucible 4 is for preventing deposition material from adhering to the upper part of the crucible body 1 due to bumping of the deposition material 5, and is highly effective in stably forming a film.
第２図は、本発明の他の実施例たるクラスクイオンビー
ム蒸着方法を示すものである。真空槽８内にるつぼ１′
を置き、排気孔９こより真空槽８内ヲ１０′″４〜１０
−５Ｔｏｒｒ の高真空に排気する。るつぼ１′は、前
述の如（、導電性物質からなるるつぼ本体に副るつぼを
はめ込み、その上方に蒸気加熱部を有する構造になって
いる。るつぼ内には蒸着物質５８入れ、蒸気圧が数Ｔｏ
ｒｒ に相当する温度に加熱する。本実施例ではフィラ
メント１０により電子衝撃法で加熱する。すなわち、フ
ィラメント１０番こ対して正電位を有するるつぼ１′に
、フィラメント１０より、フィラメントに通電すること
により発生する熱電子が飛来し高温に加熱されるもので
ある（尚、加熱方法としては、他に高周波加熱法。FIG. 2 shows a Clask ion beam deposition method according to another embodiment of the present invention. Crucible 1' in vacuum chamber 8
from the exhaust hole 9 to the inside of the vacuum chamber 8.
Evacuate to a high vacuum of -5 Torr. As described above, the crucible 1' has a structure in which a sub-crucible is fitted into the crucible main body made of a conductive material and has a steam heating section above the crucible. To
Heat to a temperature corresponding to rr. In this embodiment, the filament 10 is heated by an electron impact method. That is, thermoelectrons generated by energizing the filament 10 fly into the crucible 1', which has a positive potential with respect to filament No. 10, and are heated to a high temperature (the heating method is as follows: Another method is high-frequency heating.
ヒータ一方式等がある）。すると、実施例１において詳
述した如（、るつぼ１′内には高温、すなわち高圧の蒸
着物質の蒸気が効率良（安定−して生成され、るつぼ外
との圧力差によりノズル３から噴出されるが、この際に
断熱膨張による過冷却状態によって蒸着物質は塊状原子
集団（いわゆるクラスター）になる。本タラスターの生
成機構は、特公昭５４−９５９２ に詳述されている
。このクラスターを何らかの手段によってイオン化して
基板に射突、付着させるのがクラスターイオンビーム法
であるが、本実施例ではマイクロ波プラズマによってク
ラスタのイオン化を図る（クラスターのイオン化方法と
しては、熱電子放射用フィラメントよりクラスターに電
子流を照射してイオン化する方法もある）０すなわち、
マイクロ波発振源１１で発生した数Ｇ）ｌｚ（通常は２
．４５ Ｇ ｔｌｚ ）のマイクロ波が導波管１２によ
り、真空保持用の密閉板１３を介して真空槽８内ｌこ導
入される。密閉板１５は、マイクロｅ、を通過させる為
に、例えば石英板などの誘電体を用いる。マイクロ波発
振源１１と密閉板１５の関ｌこは、インピーダンス整合
用のチューナ１４．入射及び反射波検出用のパワーモニ
タ１５１反射波吸収用のアイソレータ１６８・設置する
。尚、１７はマイクロ波発振源用電源である。真空槽８
内に導入されたマイクロ波は、電ａコイル゛ｉ８．１８
’（を源は１９）により規定される磁界条件ｌこより成
子サイクロトロン共鳴を起し、高密度、晶ユネルギーの
プラズマが発生する。すなわち、相（昇が力）か゛つて
いる場合、電子は磁力線の回りを導旋運動（いわゆるサ
イクロトロン運動）シ、この時の周波数ｆｅはｆｅ＝ｅ
Ｂ／ｍｅから一義的に定まる。ここで、ｅ＝電子の素電
荷、Ｂ＝磁界の強さ、ｎ１ｅ＝電子の質量である。この
ｆｅと、導入されるマイクロ波の周波数を一致させると
上記の成子サイクロトロン共鳴（ＥＣＲ）が起り、電子
が激しく動きまわって大きな運動エネルギーを有するよ
うになる。この結果、プラズマの電離が促進され、プラ
ズマ密度も大きくなる。工業用のマイクロ波の周波数は
通常２．４５Ｑｋｉｚであり、したがって、上式より磁
界強さは８７５ガウスとして設定される。このＥＣＲの
効果Ｉこより、第２図の真空槽内には高密度のプラズマ
が発生し、その中に存在する多数の電子は大きなエネル
ギーを有している。したがって、前述のクラスターが、
このプラズマ領域を通過する際、高エネルギーを有する
電子と衝突し、クラスター中の原子がイオン化される確
率が大となり、いわゆるクラスターイオンが出来やすく
なる。このようにして出来たクラスターイオンは、るつ
ぼ１′に対して負電位を有する加速電極２０により加速
されて基板２１に射突し所定の成膜が実現することにな
る０尚、クラスターイオンの加速方法としては、本図の
如（加速電極２０（−特に設けず、基板側負電位のみで
加速する方法、あるいは、基板＊ＩＪ（こ加速電極２０
以上の負電位を印加してクラスターイオンを再加速する
方法もある。(There are heater types, etc.) Then, as described in detail in Example 1, high-temperature, high-pressure vapor of the deposition material is generated efficiently (and stably) inside the crucible 1', and is ejected from the nozzle 3 due to the pressure difference with the outside of the crucible. However, at this time, the deposited material becomes a lumpy atomic group (so-called cluster) due to the supercooled state caused by adiabatic expansion.The generation mechanism of this Tarastar is detailed in Japanese Patent Publication No. 54-9592. In the cluster ion beam method, the clusters are ionized by a thermoelectron emission filament and attached to the substrate, but in this example, the clusters are ionized by microwave plasma. There is also a method of ionizing by irradiating the electron stream) 0, that is,
The number of G)lz generated by the microwave oscillation source 11 (usually 2
．． Microwaves of 45 G tlz ) are introduced into the vacuum chamber 8 through a waveguide 12 and a sealing plate 13 for maintaining vacuum. The sealing plate 15 uses a dielectric material such as a quartz plate to allow the micro e to pass through. The connection between the microwave oscillation source 11 and the sealing plate 15 is a tuner 14 for impedance matching. A power monitor 151 for detecting incident and reflected waves and an isolator 168 for absorbing reflected waves are installed. Note that 17 is a power source for a microwave oscillation source. Vacuum chamber 8
The microwave introduced into the
' (The source is 19) Due to the magnetic field conditions defined by 19, a Seiko cyclotron resonance occurs, and a plasma with high density and crystal energy is generated. In other words, when there is a phase (rising force), the electrons move in a circular motion (so-called cyclotron motion) around the magnetic field lines, and the frequency fe at this time is fe=e
It is uniquely determined from B/me. Here, e=elementary charge of the electron, B=strength of the magnetic field, and n1e=the mass of the electron. When this fe and the frequency of the introduced microwave are matched, the above-described cyclotron resonance (ECR) occurs, and electrons move around violently and have large kinetic energy. As a result, ionization of the plasma is promoted and the plasma density also increases. The frequency of industrial microwaves is usually 2.45Qkiz, so the magnetic field strength is set as 875 Gauss from the above equation. Due to this effect of ECR, a high-density plasma is generated in the vacuum chamber shown in FIG. 2, and a large number of electrons present in the plasma have high energy. Therefore, the aforementioned cluster is
When passing through this plasma region, there is a high probability that atoms in the cluster will be ionized by colliding with high-energy electrons, making it easier to form so-called cluster ions. The cluster ions thus formed are accelerated by an accelerating electrode 20 having a negative potential with respect to the crucible 1' and impinge on the substrate 21 to form a predetermined film. As a method, as shown in this figure (acceleration electrode 20 (-) is not provided, and acceleration is performed only with a negative potential on the substrate side, or substrate *IJ (this acceleration electrode 20
There is also a method of re-accelerating cluster ions by applying the above negative potential.
以上述べた如く、本方法ζこよれば、導電性物質からな
るるつぼ本体に副るつぼをはめ込み、その上方に蒸気加
熱部を有する構造のるつぼを用いることにより不純物の
少ない高品質のクラスタが効率良く安定して生成され１
、更にζ、のクラスターをＥＣＲプラズマによってイオ
ン化することｔこより所定の成膜が実現される。As mentioned above, according to the present method, high-quality clusters with few impurities can be efficiently produced by using a crucible having a structure in which a sub-crucible is fitted into a crucible main body made of a conductive material and has a steam heating section above the crucible. Stably generated 1
, and further ionize the clusters of ζ by ECR plasma, thereby achieving a predetermined film formation.
本発明によれば、るつぼから蒸着物質への不純物混入が
なく、又、加熱効率良く高圧の蒸着物蒸気を生成できる
効果があり、特にクラスターイオンビーム蒸着において
高品質の薄膜を安定、して成膜出来る効果がある。According to the present invention, there is no impurity mixed into the vapor deposited material from the crucible, and high pressure vapor of the vapor can be generated with high heating efficiency. Particularly in cluster ion beam vapor deposition, high quality thin films can be stably produced. It has the effect of forming a film.
第１図は、本発明の−・実施例たるクラスタイオタイオ
ンビーム蒸着方法を示す一部断面図である。
１・・・るつぼ本体 １′・・・るつぼ２・・・ふ
た ３・・・ノズル４・・・副るつぼ
５・・・蒸着物質６・・・蒸気加熱部 ７・・・
張出し部８・・・真空槽 ９・・・排気孔１０
・・・フィラメント １１・・・マイクロ波発振源１
２・・・導波管 １５・・・密閉板１４・・・
チュウナ １５・・・パワーモニタ１６・・・ア
イソレータ
１７・・・マイクロ波発振源用電源FIG. 1 is a partial sectional view showing a cluster ion beam evaporation method according to an embodiment of the present invention. 1... Crucible body 1'... Crucible 2... Lid 3... Nozzle 4... Sub-crucible
5... Vapor deposition substance 6... Steam heating section 7...
Overhang part 8... Vacuum chamber 9... Exhaust hole 10
...Filament 11...Microwave oscillation source 1
2... Waveguide 15... Sealing plate 14...
Tuner 15... Power monitor 16... Isolator 17... Power supply for microwave oscillation source
Claims (1)
から成る副るつぼをはめ込み、副るつぼ内には蒸着物質
を収容し、副るつぼの上方に蒸気加熱部を設けたことを
特徴とする蒸発源用るつぼ。 ２、るつぼ本体が導電性物質から成ることを特徴とする
請求項１記載の蒸発源用るつぼ。３、ノズルを有するふ
たを備えたことを特徴とする請求項１又は２記載の蒸発
源用るつぼ。 ４、副るつぼ上部に張出し部を設けたことを特徴とする
請求項３記載の蒸発源用るつぼ。５、所定の真空度にな
つている真空槽内に、蒸着物質を収容している請求項１
又は２又は３又は４記載のるつぼと、所定の薄膜を成膜
すべき基板を配置し、前記るつぼを加熱し、蒸着物質を
蒸気化することによつて基板上に所定の薄膜を形成する
ことを特徴とする薄膜成膜方法。 ６、るつぼのノズルから噴射される蒸着物質のクラスタ
をイオン化し、これを別途具備するイオン引出し電極の
負電位により加速することを特徴とする請求項５記載の
薄膜成膜方法。[Claims] 1. A sub-crucible made of a substance that does not easily react with the vapor deposition substance is fitted inside the crucible body, the vapor deposition substance is housed in the sub-crucible, and a steam heating section is provided above the sub-crucible. A crucible for evaporation source characterized by the following. 2. The crucible for evaporation source according to claim 1, wherein the crucible body is made of a conductive material. 3. The crucible for evaporation source according to claim 1 or 2, further comprising a lid having a nozzle. 4. The crucible for evaporation source according to claim 3, characterized in that an overhang is provided on the upper part of the sub-crucible. 5. Claim 1, wherein the vapor deposition substance is housed in a vacuum chamber that has a predetermined degree of vacuum.
or arranging the crucible according to 2, 3, or 4 and a substrate on which a predetermined thin film is to be deposited, heating the crucible, and vaporizing the deposition substance to form a predetermined thin film on the substrate. A thin film deposition method characterized by: 6. The thin film forming method according to claim 5, characterized in that the clusters of the vapor deposition material injected from the nozzle of the crucible are ionized and accelerated by a negative potential of an ion extraction electrode separately provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6610689A JPH02247374A (en) | 1989-03-20 | 1989-03-20 | Crucible for evaporation source and thin film formation using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6610689A JPH02247374A (en) | 1989-03-20 | 1989-03-20 | Crucible for evaporation source and thin film formation using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02247374A true JPH02247374A (en) | 1990-10-03 |
Family
ID=13306308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6610689A Pending JPH02247374A (en) | 1989-03-20 | 1989-03-20 | Crucible for evaporation source and thin film formation using same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02247374A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004315898A (en) * | 2003-04-16 | 2004-11-11 | Tokki Corp | Evaporation source in vapor deposition system |
| JP2006193761A (en) * | 2005-01-11 | 2006-07-27 | Ideal Star Inc | Vaporizer, and plasma treatment device having vaporizer |
| US8025733B2 (en) * | 2002-07-23 | 2011-09-27 | Samsung Mobile Display Co., Ltd. | Heating crucible and deposition apparatus using the same |
| CN104357797A (en) * | 2014-11-14 | 2015-02-18 | 京东方科技集团股份有限公司 | Heater for crucible, crucible and evaporation source |
| CN104593730A (en) * | 2014-12-24 | 2015-05-06 | 深圳市华星光电技术有限公司 | Crucible capable of preventing splitting decomposition of organic light emitting diode (OLED) material |
| CN106967952A (en) * | 2016-01-13 | 2017-07-21 | 张家港康得新光电材料有限公司 | Heater |
| JP2018104804A (en) * | 2016-12-28 | 2018-07-05 | 株式会社半導体エネルギー研究所 | Manufacturing apparatus |
-
1989
- 1989-03-20 JP JP6610689A patent/JPH02247374A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8025733B2 (en) * | 2002-07-23 | 2011-09-27 | Samsung Mobile Display Co., Ltd. | Heating crucible and deposition apparatus using the same |
| JP2004315898A (en) * | 2003-04-16 | 2004-11-11 | Tokki Corp | Evaporation source in vapor deposition system |
| JP2006193761A (en) * | 2005-01-11 | 2006-07-27 | Ideal Star Inc | Vaporizer, and plasma treatment device having vaporizer |
| CN104357797A (en) * | 2014-11-14 | 2015-02-18 | 京东方科技集团股份有限公司 | Heater for crucible, crucible and evaporation source |
| CN104593730A (en) * | 2014-12-24 | 2015-05-06 | 深圳市华星光电技术有限公司 | Crucible capable of preventing splitting decomposition of organic light emitting diode (OLED) material |
| CN104593730B (en) * | 2014-12-24 | 2017-02-22 | 深圳市华星光电技术有限公司 | Crucible capable of preventing splitting decomposition of organic light emitting diode (OLED) material |
| CN106967952A (en) * | 2016-01-13 | 2017-07-21 | 张家港康得新光电材料有限公司 | Heater |
| JP2018104804A (en) * | 2016-12-28 | 2018-07-05 | 株式会社半導体エネルギー研究所 | Manufacturing apparatus |
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