JP2018104804A - Manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing apparatus including a vapor deposition source that can heat uniformly vapor deposition materials at film deposition by vapor deposition, and provide a manufacturing apparatus including a vapor deposition source that can supply efficiently vapor deposition materials.SOLUTION: A manufacturing apparatus uses a vapor deposition source having a double structure composed of materials of different qualities and therefore can heat uniformly vapor deposition materials provided in a vapor deposition source. The vapor deposition source having a double structure has a first crucible including vapor deposition materials, and a second crucible having the first crucible inside, where the first crucible can be separated from the second crucible and taken out.SELECTED DRAWING: Figure 1

Description

One embodiment of the present invention relates to a manufacturing apparatus including a film formation apparatus that performs film formation by vapor deposition. Further, one embodiment of the present invention relates to a light-emitting element and a light-emitting device manufactured using the manufacturing apparatus, an electronic device, and a manufacturing method thereof. In particular, the present invention relates to a structure of a vapor deposition source having a vapor deposition material such as an organic compound. Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, the technical field of one embodiment of the present invention disclosed in this specification includes, in addition to the above, a semiconductor device, a display device, a liquid crystal display device, a power storage device, a memory device, a driving method thereof, or These production methods can be mentioned as an example.

A light-emitting element (also referred to as an organic EL element) in which an EL layer is sandwiched between a pair of electrodes has characteristics such as thin and light weight, high-speed response, and low-voltage driving. It is attracting attention as a panel display. This light-emitting element has an organic compound that is a light-emitting substance in the EL layer, and when a voltage is applied, electrons and holes injected from the electrode are recombined, whereby the light-emitting substance becomes an excited state, and its excitation Light is emitted when the state returns to the ground state.

The formation of the EL layer is broadly classified according to the molecular structure of the organic compound that forms the EL layer. While the polymer (polymer) material is formed by a coating method or an inkjet method, the low molecular weight (monomer) System) material is mainly formed by vapor deposition.

When film formation is performed using a vapor deposition method, vapor deposition is performed using a vapor deposition apparatus, but the film thickness is adversely affected due to the poor state of the film formed. A film forming apparatus that can make the thickness uniform has been reported so far (for example, Patent Document 1).

JP 2001-247959 A

In one embodiment of the present invention, a manufacturing apparatus including a vapor deposition source capable of uniformly heating a vapor deposition material during film formation by vapor deposition is provided. Moreover, the manufacturing apparatus provided with the vapor deposition source which can supply vapor deposition material efficiently is provided. In one embodiment of the present invention, a light-emitting element, a light-emitting device, or an electronic device formed using the above manufacturing apparatus is provided. Another embodiment of the present invention provides a light-emitting element, a light-emitting device, and a method for manufacturing an electronic device that are manufactured using the above manufacturing apparatus. Note that the description of these problems does not disturb the existence of other problems. Further, one embodiment of the present invention does not necessarily solve all of these problems. In addition, problems other than these will be apparent from the description of the specification, drawings, claims, etc., and other problems can be extracted from the description of the specifications, drawings, claims, etc. It is.

One embodiment of the present invention is a manufacturing apparatus characterized in that a vapor deposition source provided in a vapor deposition source can be uniformly heated by using a vapor deposition source having a dual structure made of different materials. Note that the vapor deposition source having a dual structure includes a first crucible provided with a vapor deposition material and a second crucible provided with the first crucible inside, and the first crucible is formed from the second crucible. Can be separated and taken out. Since it has such a structure, when replacing the vapor deposition material provided in the first crucible, the first crucible is replaced with another first crucible provided with the vapor deposition material. be able to.

Another embodiment of the present invention includes a film formation chamber having a vapor deposition source and means for moving the vapor deposition source,
The vapor deposition source is a manufacturing apparatus characterized by having a first crucible having a vapor deposition material and a second crucible having the first crucible inside.

Another embodiment of the present invention includes a carry-in chamber, a transfer chamber connected to the carry-in chamber, and a plurality of film formation chambers connected to the transfer chamber, and at least one of the film formation chambers includes: A deposition source, and means for moving the deposition source, the deposition source having a first crucible having a deposition material and a second crucible having the first crucible inside. Manufacturing equipment.

In each of the above structures, the evaporation source is heated by heating means provided in the second crucible.

In each of the above structures, the first crucible is made of a material having a high infrared emissivity, and the second crucible is made of a material having a high thermal conductivity.

In the above structure, materials having high infrared emissivity include oxide-based alumina, zirconia, barium titanate, carbide-based silicon carbide, nitride-based silicon nitride, aluminum nitride, boron nitride, and halide-based materials. Fluorite or a composite of these materials can be used.

In each of the above structures, a metal material such as silver, copper, gold, platinum, aluminum, titanium, iron, nickel, iridium, or an alloy thereof can be used as the material having high thermal conductivity.

Another embodiment of the present invention is that, in each of the above-described configurations, the first crucible having the vapor deposition material is replaced with another first crucible having the vapor deposition material in the same manner as described above. It is a manufacturing apparatus which can exchange vapor deposition material.

Further, another embodiment of the present invention is a light-emitting element, a light-emitting device, and an electronic device which are manufactured using the manufacturing device which is one embodiment of the present invention described above. Note that a light-emitting element manufactured using the manufacturing apparatus which is one embodiment of the present invention for forming any one of an EL layer between a pair of electrodes and a functional layer included in the EL layer is also included in the present invention. I will do it. In addition to a light-emitting element, a light-emitting device including a transistor, a substrate, and the like is also included in the scope of the invention. In addition to these light-emitting devices, an electronic device or lighting device having a microphone, a camera, an operation button, an external connection unit, a housing, a touch sensor, a cover, a support base, a speaker, or the like is also included in the scope of the invention. .

Note that one embodiment of the present invention includes not only a light-emitting device having a light-emitting element but also a lighting device having a light-emitting device. Therefore, the light-emitting device in this specification refers to an image display device or a light source (including a lighting device). Also, a connector such as a flexible printed circuit (FPC) or TCP (Tape Carrier Package) attached to the light emitting device, a module provided with a printed wiring board at the end of the TCP, or a COG (Chip On Glass) attached to the light emitting element. It is assumed that the light emitting device also includes all modules on which IC (integrated circuit) is directly mounted by the method.

In one embodiment of the present invention, since the vapor deposition material can be uniformly heated in the vapor deposition source of the manufacturing apparatus, the film quality of the vapor deposition film to be formed is excellent while suppressing the decomposition and deterioration of the vapor deposition material due to heating during vapor deposition. Thus, the lifetime of the manufactured light-emitting element, light-emitting device, and electronic device can be extended. In addition, by using a vapor deposition source that can efficiently supply the vapor deposition material, it is possible to prevent impurities from being mixed into the vapor deposition material and improve throughput in a manufacturing apparatus including a film formation chamber by vapor deposition. In one embodiment of the present invention, a light-emitting element, a light-emitting device, an electronic device, or a lighting device formed using the above manufacturing apparatus can be provided. Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

The figure explaining the structure of a vapor deposition source. The figure explaining the exchange method of a vapor deposition source. The figure explaining a manufacturing apparatus. The figure explaining a manufacturing apparatus. 3A and 3B illustrate a light-emitting element. FIG. 6 illustrates a light-emitting device. FIG. 6 illustrates a light-emitting device. 6A and 6B illustrate electronic devices. 6A and 6B illustrate electronic devices. The figure explaining a manufacturing apparatus. The figure explaining a manufacturing apparatus.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes can be made in form and details without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

Note that the terms “film” and “layer” can be interchanged with each other depending on the case or circumstances. For example, the term “conductive layer” may be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” may be changed to the term “insulating layer” in some cases.

(Embodiment 1)
In this embodiment, a structure of a vapor deposition source used in a film formation chamber of a manufacturing apparatus which is one embodiment of the present invention will be described with reference to FIGS.

FIG. 1A shows details of the evaporation source 100. The vapor deposition source 100 has a double crucible structure composed of an inner first crucible 101 and an outer second crucible 102.

FIG. 1B shows the structure of the first crucible 101. The first crucible 101 is provided with a vapor deposition material 104. The first crucible 101 is formed of a material having a high infrared emissivity. A ceramic material is mentioned as a material with high infrared emissivity. Examples of the ceramic material include oxide-based alumina, zirconia, barium titanate, carbide-based silicon carbide, nitride-based silicon nitride, aluminum nitride, boron nitride, halide-based fluorite, or those materials. Examples include composites.

Thus, since the first crucible 101 is formed of a material having a high infrared emissivity, the first crucible 101 is provided with a vapor deposition material inside, and the vapor deposition material is heated excessively by the action of far infrared rays emitted from the heated crucible 101. It is possible to prevent the phenomenon of destroying the molecular structure of the vapor deposition material due to the thermal energy occurring during the process, and to perform heating uniformly.

FIG. 1C shows the structure of the second crucible 102 and the heater 103. The second crucible 102 has a structure separable between the second crucible (upper part) 102T and the second crucible (lower part) 102B. Note that the second crucible 102 is formed of a material having high thermal conductivity. As a material having high thermal conductivity, a metal material such as silver, copper, gold, platinum, aluminum, titanium, iron, nickel, iridium, or an alloy thereof can be used. The heater 103 provided outside the second crucible 102 is used for heating. Note that the configuration of the heater 103 is not particularly limited, and may be a heating unit for the second crucible 102.

Thus, since the second crucible 102 is formed of a material having high thermal conductivity, the heat applied to the second crucible 102 from the heater 103 is applied to the first crucible 101 provided inside. Can communicate efficiently without unevenness.

The vapor deposition source 100 shown in FIG. 1 is used in a film forming chamber of a manufacturing apparatus. Note that since the vapor deposition material 104 is provided in the first crucible 101, the vapor deposition material 104 may be replaced with the first crucible 101. The first crucible 101 is replaced by taking out the first crucible 101 with the used vapor deposition material from the second crucible 102 of the vapor deposition source 100 and replacing the other first crucible 101 with the new vapor deposition material. This can be done by providing the second crucible 102.

Next, replacement of the first crucible 101 shown in FIG. 1 will be described in detail with reference to FIG. In FIG. 2, the first crucible 101 is distinguished from a first crucible 101 a provided with a used vapor deposition material 104 a and a first crucible 101 b provided with a new vapor deposition material 104 b.

FIG. 2A shows a state in which the second crucible (upper part) 102T is separated from the second crucible (lower part) 102B by the transfer robot 108a from the second crucible 102 of the used vapor deposition source. Note that the first crucible 101a provided in the used vapor deposition source contains the used vapor deposition material 104a containing impurities that have been altered by heating during vapor deposition.

Next, proceeding in the direction of the arrow, as shown in FIG. 2B, the first crucible 101a is taken out from the second crucible (lower part) 102B by the transfer robot 108b.

Next, proceeding in the direction of the arrow, as shown in FIG. 2C, a new vapor deposition material 104b is provided, and the first crucible 101b different from that taken out in FIG. The second crucible (lower part) 102B is prepared by the robot 108b.

Next, proceeding in the direction of the arrow, as shown in FIG. 2D, the second crucible (upper part) 102T is overlapped with the second crucible (lower part) 102B by the transfer robot 108a. Thereby, the exchange of the vapor deposition material is completed as shown in FIG. Here, the openings 109 of the first crucible 101b and the second crucible 102 are both at the positions shown in FIG. Therefore, when the vapor deposition source 100 is heated by the heater 103 during vapor deposition, the vaporized vapor deposition material 104b flies from the opening 109 toward the film formation substrate. Thereby, a vapor deposition material can be deposited on the substrate.

The structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 2)
In this embodiment, a manufacturing apparatus including a deposition chamber including the evaporation source described in Embodiment 1 is described with reference to FIGS. Although FIG. 1 shows a flat-flow type apparatus mechanism in which a substrate is transported horizontally in one direction in the film formation chamber, it can also be applied to an apparatus mechanism having a cluster type film formation chamber. .

In FIG. 3, 200 is a substrate, 201 is a film formation chamber, 202 and 203 are substrate transfer chambers, 204 is a crucible transfer chamber, 205 is a crucible exchange chamber, 206 is a vapor deposition source holder, 207 is a vapor deposition source, and 208a is the first. , 208b is a second crucible, 209 is a first crucible replacement robot, 210 is a first crucible storage base, 211 is a door, and 212, 213a, 213b, 214, and 215 are shutters that partition each room. is there.

The substrate 200 is transferred from the transfer chamber 202 into the film formation chamber 201. When vapor deposition is performed at a selective position, the vapor deposition is performed after the vapor deposition mask and the substrate are aligned.

The vapor deposition source holder 206 is set with a vapor deposition source 207 in which a vapor deposition material (for example, an organic compound for forming an EL layer of a light emitting element) is stored. Although FIG. 3 shows the case where four vapor deposition sources are set, the present invention is not limited to this, and only one vapor deposition source or three or more vapor deposition sources may be set. Note that the evaporation source 207 has a structure similar to that of the evaporation source 100 described in Embodiment 1, and can include therein a first crucible 208a provided with an evaporation material and a first crucible 208a. It is comprised from the 2nd crucible 208b.

The vapor deposition material of the vapor deposition source 207 can be exchanged by taking out the first crucible 208a from the second crucible 208b and exchanging it with another first crucible having a new vapor deposition material. That is, in the crucible transfer chamber 204, a used first crucible 208a included in the vapor deposition source 207 carried out from the film formation chamber 201 to the crucible transfer chamber 204 and a first crucible 208a provided with a new vapor deposition material are provided. The new vapor deposition material is supplied to the vapor deposition source 207 by being replaced by the crucible replacement robot 209. The first crucible 208a provided with a new vapor deposition material is stored in the first crucible storage base 210a shown in FIG. In addition, the first crucible 208a taken out from the second crucible 208b is also temporarily stored in the first crucible storage base 210a.

The crucible exchange chamber 205 has a first crucible storage base 210b in which the first crucible 208a is stored. The crucible exchange chamber 205 can carry in the first crucible 208a having a new vapor deposition material from the door 211 and carry out the used first crucible 208a.

In the film forming chamber 201, the evaporation source holder 206 is moved in one direction, whereby an evaporation film is formed linearly or in a strip shape with respect to the substrate. Next, the substrate 200 is moved, and the vapor deposition source holder 206 is moved again. By sequentially repeating the movement of the vapor deposition source holder 206 and the movement of the substrate 200, a uniform vapor deposition film can be formed on the entire surface of the substrate 200. When the substrate 200 and the vapor deposition source holder 206 are moved simultaneously, the vapor deposition film is formed obliquely with respect to one side of the substrate 200 in a linear or strip shape. In the structure described in this embodiment, evaporation can be performed over the entire surface of the substrate 200 by moving or reciprocating the substrate 200 in one direction. In the case of such a configuration, the substrate is moved together with the vapor deposition. Therefore, if the moving direction is made coincident with the conveyance direction, the substrate is conveyed along with the vapor deposition. Therefore, in this case, the manufacturing apparatus is suitable for processing a large number of substrates continuously. Moreover, since a board | substrate is conveyed with vapor deposition, size reduction as the whole manufacturing apparatus can also be achieved.

In the crucible transfer chamber 204, the vapor deposition source 207 is heated and kept warm. Therefore, the vapor deposition source holder 206 always stands by in the crucible transfer chamber 204, and the vapor deposition source is heated and kept warm until the vapor deposition rate is stabilized. Note that a film thickness monitor (not shown) is installed in the film formation chamber 201. When the deposition rate is stabilized, the substrate is transferred from the substrate transfer chamber 202 to the film formation chamber 201, and the shutter is opened to set the evaporation source holder. Move. When vapor deposition is completed, the vapor deposition source 207 is moved to the crucible transfer chamber 204 and the shutter is closed. Thereafter, the substrate 201 can be transferred to the substrate transfer chamber 203.

In the structure of the film forming apparatus described above, the vapor deposition source 207 has a structure in which the first crucible 208a and the second crucible 208b overlap each other, and the vapor deposition material is supplied with a new vapor deposition material. Since one crucible can be exchanged, in addition to being easy to exchange, mixing of impurities into the vapor deposition material can be prevented during material exchange. The first crucible 208a is made of a material having a high infrared emissivity (for example, a ceramic material), and the second crucible 208b is a material having a high thermal conductivity (for example, silver, copper, gold, platinum, aluminum, titanium). , Iron, nickel, iridium and other metal materials, or alloys thereof, the deposition source having these dual structures can uniformly heat the deposition material provided in the deposition source. In addition, the film quality of the obtained vapor deposition film can be improved by heating vapor deposition material uniformly.

Note that the deposition material can be efficiently deposited on the substrate by moving the deposition source holder 206 in the deposition chamber 201.

10 shows a configuration in which one crucible transfer chamber 204 is connected between two film forming chambers 201, unlike the configuration shown in FIG. With such a structure, the first crucible 208a of the evaporation source 207 used in the other film formation chamber 201b can be replaced while the film formation is performed in the one film formation chamber 201a. .

FIG. 11 illustrates an example of a cross-sectional configuration of the film formation chamber 201. Note that the film formation chamber 201 includes a substrate fixing portion 221, a vapor deposition source holder 206, a movement mechanism 222a, a movement mechanism 222b, and a movement table 224.

Note that the substrate fixing portion 221 can fix the substrate 200 so that the deposition surface of the substrate 200 faces downward. Note that in the case where film formation is selectively performed on the deposition surface of the substrate 200, a mask 223 may be provided as necessary.

Further, the moving table 224 that holds the vapor deposition source holder 206 can be moved in the X direction, the Y direction, the θ direction, and the Z direction by the moving mechanism 222.

By improving the film quality in this way, it is possible to improve characteristics of a light emitting element formed using such a deposited film, a light emitting device formed using the light emitting element, and an electronic device.

In addition, in the above-described structure of the film formation apparatus, it is possible to perform film formation without requiring time for supplying a vapor deposition material or adjusting the pressure in the film formation chamber at the time of film formation. it can.

(Embodiment 3)
In this embodiment, a manufacturing apparatus including a deposition chamber including the evaporation source described in Embodiment 1 is described with reference to FIGS. Note that, here, the substrate on which the first electrode (anode) of the light-emitting element is formed is put into a manufacturing apparatus, and the steps from the formation of the EL layer, the second electrode (cathode), and the bonding of the sealing substrate are performed. The case where this is performed by a manufacturing apparatus will be described.

In FIG. 4, gates 500 a to 500 j, a substrate loading chamber (loading chamber) 520, a sealing / unloading chamber 519, transfer chambers 504 and 514, film formation chambers 506, 509 and 512, and a deposition source are installed. A crucible transfer chamber 502, a crucible exchange chamber 507 for carrying out and carrying in the first crucible, a pretreatment chamber 503, a sealing substrate stock chamber 530, a sealing substrate load chamber 517, and a sealing chamber 518 are provided. This is a multi-chamber manufacturing apparatus.

In the case of manufacturing an active matrix light-emitting device, a plurality of thin film transistors (TFTs or the like) connected to a first electrode in advance are provided over a substrate, and a driver circuit including the thin film transistors is also provided. Note that the manufacturing apparatus illustrated in FIGS. 4A to 4C can also be used to manufacture a simple matrix light-emitting device.

First, the substrate is set in the substrate loading chamber 520. Substrate sizes of 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, and even 1150 mm × 1300 mm can be handled.

The substrate set in the substrate loading chamber 520 is transferred to the transfer chamber 504 by a transfer mechanism (transfer robot or the like) 511a.

Note that the transfer chamber 504 is provided with a transfer mechanism (such as a transfer robot) 511a and a vacuum evacuation unit (not shown) for transferring or reversing the substrate. Vacuum evacuation means are provided respectively. The transfer chamber 504 can maintain atmospheric pressure or vacuum.

Examples of the evacuation means include a magnetic levitation turbo molecular pump, a cryopump, or a dry pump. By providing these, the ultimate vacuum degree of the transfer chamber connected to each chamber can be set to 10 ⁻⁵ to 10 ⁻⁶ Pa, and the back diffusion of impurities from the pump side and the exhaust system is controlled. be able to.

In order to prevent impurities from being introduced into the apparatus, an inert gas such as nitrogen or a rare gas is used as the introduced gas. These gases introduced into the apparatus are those purified by a gas purifier before being introduced into the apparatus. Therefore, it is necessary to provide a gas purifier so that the gas is introduced into the vapor deposition apparatus after being highly purified. Thereby, oxygen, water, and other impurities contained in the gas can be removed in advance, so that these impurities can be prevented from being introduced into the apparatus.

In order to reduce shrinkage due to heating or the like during vapor deposition, it is preferable to perform vacuum heating on the substrate immediately before vapor deposition in the film formation chamber 506, and before the substrate can be heated in vacuum from the transfer chamber 504. In order to remove the moisture and other gases contained in the substrate by being transferred to the treatment chamber 503, the annealing treatment is performed under vacuum (5 × 10 ⁻³ Torr (0.665 Pa) or less, preferably 10 ⁻⁴ to 10 ^−6. Pa) is preferred. As a temperature of annealing treatment, 100 to 250 degreeC is preferable, for example, and the heating at 150 to 200 degreeC is more preferable. Further, the pretreatment chamber 503 may be provided with a UV irradiation mechanism so that ultraviolet irradiation can be performed.

Further, when it is necessary to form a film using a polymer material or an organic compound contained in a solution, a coating method, an inkjet method, a spin coating method, a spray method in the film formation chamber 512 under atmospheric pressure or reduced pressure. Alternatively, a film can be formed by a printing method or the like. Note that specific materials shown in other embodiments can be used as specific examples of the organic compound contained in the polymer material or the solution.

Note that in the case where a film is formed using the above material in the film formation chamber 512, the film may be transferred to the pretreatment chamber 503 and subjected to heat treatment.

Next, the substrate is transferred from the transfer chamber 504 to the film formation chamber 506 by the transfer mechanism 511a. In the deposition chamber 506, an EL layer of a light-emitting element is formed. Note that the functional layer constituting the EL layer includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like. These layers are formed using one or more kinds of vapor deposition materials (organic compound or inorganic compound). Therefore, the vapor deposition source may be provided with these vapor deposition materials. Moreover, when forming the light emitting layer which shows a different luminescent color, what is necessary is just to provide a different organic compound in a vapor deposition source, respectively. In FIG. 4, only one film formation chamber 506 is shown by a solid line, but another film formation chamber may be connected to the dotted line portion.

In the film formation chamber 506, a deposition source holder 510 that can move (or reciprocate) in the X direction as described in Embodiment 2 is provided. A plurality of (four in this embodiment) evaporation source holders 510 are prepared, and a plurality of containers (crucibles) filled with EL materials are provided as appropriate, and are installed in the film forming chamber in this state. For example, the first vapor deposition source holder has a vapor deposition material (organic compound 1) constituting the light emitting layer, the second vapor deposition source holder has a vapor deposition material (organic compound 2) that constitutes the electron transport layer, and the third The vapor deposition source holder of this material stores the vapor deposition material (organic compound 3) that constitutes the electron injection layer, and the fourth vapor deposition source holder accommodates the vapor deposition material (inorganic compound) that constitutes the cathode buffer layer. That's fine. Moreover, what is necessary is just to provide a some vapor deposition source holder, when using multiple types of vapor deposition material for formation of one layer. In the film formation chamber 506, the substrate is also moved (or reciprocated) in the Y direction so as to be orthogonal to the moving direction of the vapor deposition source holder 501. A film can be selectively formed by setting a substrate by a face-down method, aligning the position of a deposition mask with a CCD or the like, and performing deposition. When the deposition is completed, the substrate is transferred to the next transfer chamber 514 side.

As a deposition source used in the deposition chamber 506, the deposition source described in Embodiments 1 and 2 can be used. Therefore, the configuration of the vapor deposition source and the exchange of the vapor deposition material are as described in the first embodiment and the second embodiment. That is, the first crucible with a new vapor deposition material is replaced with the first crucible with a used vapor deposition material in the crucible transfer chamber 502, and the first crucible with a new vapor deposition material from the outside of the apparatus is used. The introduction of the first crucible and the removal of the first crucible including the used vapor deposition material can be performed in the crucible exchange chamber 507.

Next, the substrate is taken out from the film formation chamber 506 and transferred to the film formation chamber 509. The substrate is transferred by a transfer mechanism 511b installed in the transfer chamber 514. In the deposition chamber 509, a second electrode (cathode) (or a protective film) is formed over the substrate. Note that the second electrode is formed by vapor deposition of an inorganic film (an alloy such as MgAg, MgIn, CaF ₂ , LiF, or CaN, or an element belonging to Group 1 or 2 of the periodic table and aluminum). Or a laminated film of these). In addition, the second electrode may be formed by a sputtering method.

In the deposition chamber 509, a protective film formed of a silicon nitride film or a silicon nitride oxide film may be formed and sealed. In this case, the film formation chamber 509 is provided with a target made of silicon, a target made of silicon oxide, or a target made of silicon nitride. Further, the protective film may be formed by moving the rod-shaped target with respect to the fixed substrate. Further, the protective film may be formed by moving the substrate with respect to the fixed rod-shaped target.

For example, a silicon nitride film can be formed over the cathode by using a disk-shaped target made of silicon and setting the film formation chamber atmosphere to a nitrogen atmosphere or an atmosphere containing nitrogen and argon.

Further, a thin film mainly composed of carbon (a diamond-like carbon film (also referred to as a DLC film), a Kahn nanotube film (also referred to as a CN film), or an amorphous carbon film) may be formed as a protective film. The used film formation chamber may be provided. Plasma CVD method (typically RF plasma CVD method, microwave CVD method, electron cyclotron resonance (ECR) CVD method, hot filament CVD method, etc.), combustion flame method, sputtering method, ion beam evaporation method, laser evaporation method Etc. can be formed.

The CN film may be formed using C ₂ H ₄ gas and N ₂ gas as reaction gases. Note that the DLC film and the CN film are insulating films that are transparent or translucent to visible light. Transparent to visible light means that the visible light transmittance is 80 to 100%, and translucent to visible light means that the visible light transmittance is 50 to 80%.

Next, the substrate is transferred from the transfer chamber 514 to the sealing and extraction chamber 519.

The sealing substrate is set and prepared in the sealing substrate load chamber 517 from the outside. Note that vacuum annealing is preferably performed in advance in order to remove impurities such as moisture. In the case of forming a sealing material for bonding the substrate and the sealing substrate together, the sealing material is formed in the sealing chamber 518, and the sealing substrate on which the sealing material is formed is transferred to the sealing substrate stock chamber 530. .

Note that a desiccant may be provided on the sealing substrate in the sealing chamber 518. Further, a vapor deposition mask used for vapor deposition may be stocked in the sealing substrate stock chamber 530. Here, an example in which the sealing material is formed on the sealing substrate is shown, but the present invention is not particularly limited, and the sealing material may be formed on the substrate (the substrate on which the film has been formed).

Next, the substrate and the sealing substrate are bonded to each other in the sealing and extraction chamber 519, the pair of bonded substrates are sealed, and UV light is irradiated by an ultraviolet irradiation mechanism provided in the extraction chamber 519, thereby sealing the substrate. Harden the material. In addition, although ultraviolet curable resin was used here as a sealing material, if it is an adhesive material, it will not specifically limit.

Finally, the substrate bonded to the sealing substrate is taken out from the sealing and extraction chamber 519.

As described above, by using the manufacturing apparatus shown in FIG. 4, the EL layer and the second electrode (protective film as necessary) are formed on the first electrode without being exposed to the atmosphere, and the sealing substrate and Therefore, a highly reliable light-emitting element and light-emitting device can be manufactured. In addition, in the vapor deposition source, not only the impurities can be prevented from being mixed when the vapor deposition material is replaced, but also the replacement can be easily performed. Further, since the structure of the vapor deposition source has a double crucible structure including two types of crucibles having different materials, it is possible to uniformly heat the vapor deposition material. Further, since the evaporation source is moved and the substrate is moved in the film formation chamber 506, the evaporation is completed. Therefore, the evaporation is completed in a short time, and the processing can be performed with high throughput.

Although not shown here, the manufacturing apparatus shown in this embodiment includes a control device for controlling operations in each processing chamber, a control device for transporting between the processing chambers, and a substrate. A control control device and the like for realizing automation by controlling a route to be moved to each processing chamber are provided.

Note that the structure described in this embodiment can be combined with any of the structures described in other embodiments as appropriate.

(Embodiment 4)
In this embodiment, a light-emitting element that can be manufactured using the film formation apparatus which is one embodiment of the present invention will be described with reference to FIGS.

≪Basic structure of light emitting element≫
First, the basic structure of the light emitting element will be described. FIG. 5A illustrates a light-emitting element having an EL layer including a light-emitting layer between a pair of electrodes. Specifically, the EL layer 1103 is sandwiched between the first electrode 1101 and the second electrode 1102.

5B includes a plurality of (two layers in FIG. 5B) EL layers (1103a and 1103b) between a pair of electrodes, and a charge generation layer 1104 between the EL layers. 1 illustrates a light-emitting element having a stacked structure (tandem structure). A light-emitting element having a tandem structure can realize a light-emitting device that can be driven at a constant current and has low power consumption.

The charge generation layer 1104 injects electrons into one EL layer (1103a or 1103b) and applies voltage to the other EL layer (1103b or 1103a) when voltage is applied to the first electrode 1101 and the second electrode 1102. It has a function of injecting holes. Therefore, in FIG. 5B, when a voltage is applied to the first electrode 1101 so that the potential is higher than that of the second electrode 1102, electrons are injected from the charge generation layer 1104 to the EL layer 1103a, and the EL layer 1103b. Holes are injected into this.

Note that the charge generation layer 1104 has a property of transmitting visible light in terms of light extraction efficiency (specifically, the visible light transmittance of the charge generation layer 1104 is 40% or more). preferable. In addition, the charge generation layer 1104 functions even when it has lower conductivity than the first electrode 1101 and the second electrode 1102.

FIG. 5C illustrates a stacked structure of the EL layer 1103 of the light-emitting element. However, in this case, the first electrode 1101 functions as an anode. The EL layer 1103 has a structure in which a hole injection layer 1111, a hole transport layer 1112, a light emitting layer 1113, an electron transport layer 1114, and an electron injection layer 1115 are sequentially stacked over the first electrode 1101. Have Note that even when a plurality of EL layers are provided as in the tandem structure illustrated in FIG. 5B, each EL layer is sequentially stacked from the anode side as described above. In the case where the first electrode 1101 is a cathode and the second electrode 1102 is an anode, the stacking order is reversed.

Each of the light-emitting layers 1113 included in the EL layers (1103, 1103a, and 1103b) includes a light-emitting substance and a plurality of substances as appropriate in combination, so that fluorescent light emission or phosphorescence light emission having a desired light emission color can be obtained. be able to. Alternatively, the light-emitting layer 1113 may have a stacked structure having different emission colors. Note that in this case, different materials may be used for the light-emitting substance and other substances used for the stacked light-emitting layers. Alternatively, different light emission colors may be obtained from the plurality of EL layers (1103a and 1103b) illustrated in FIG. In this case as well, the light-emitting substance and other substances used for each light-emitting layer may be different materials.

In the light-emitting element of one embodiment of the present invention, for example, the first electrode 1101 illustrated in FIG. 5C is used as a reflective electrode, the second electrode 1102 is used as a semi-transmissive / semi-reflective electrode, and a micro optical resonator is used. With the (microcavity) structure, light emission obtained from the light-emitting layer 1113 included in the EL layer 1103 can resonate between both electrodes, and light emission obtained from the second electrode 1102 can be strengthened.

Note that in the case where the first electrode 1101 of the light-emitting element is a reflective electrode having a stacked structure of a reflective conductive material and a light-transmitting conductive material (transparent conductive film), the film of the transparent conductive film Optical adjustment can be performed by controlling the thickness. Specifically, the interelectrode distance between the first electrode 1101 and the second electrode 1102 is near mλ / 2 (where m is a natural number) with respect to the wavelength λ of light obtained from the light emitting layer 1113. It is preferable to adjust as follows.

In addition, in order to amplify desired light (wavelength: λ) obtained from the light emitting layer 1113, an optical distance from the first electrode 1101 to a region (light emitting region) where the desired light of the light emitting layer is obtained, and a second The optical distance from the electrode 1102 to the region (light emitting region) where desired light can be obtained in the light emitting layer 1113 is adjusted to be close to (2m ′ + 1) λ / 4 (where m ′ is a natural number). Is preferred. Note that the light emitting region herein refers to a recombination region between holes and electrons in the light emitting layer 1113.

By performing such optical adjustment, the spectrum of specific monochromatic light obtained from the light emitting layer 1113 can be narrowed, and light emission with good color purity can be obtained.

However, in the above case, the optical distance between the first electrode 1101 and the second electrode 1102 is strictly the total thickness from the reflective region of the first electrode 1101 to the reflective region of the second electrode 1102. it can. However, since it is difficult to precisely determine the reflection region in the first electrode 1101 and the second electrode 1102, it is assumed that any position of the first electrode 1101 and the second electrode 1102 is the reflection region. The above-mentioned effect can be sufficiently obtained. Strictly speaking, the optical distance between the first electrode 1101 and the light emitting layer from which desired light can be obtained is the optical distance between the reflective region in the first electrode 1101 and the light emitting region in the light emitting layer from which desired light can be obtained. It can be said that it is a distance. However, since it is difficult to strictly determine the reflection region in the first electrode 1101 and the light-emitting region in the light-emitting layer from which desired light can be obtained, the arbitrary position of the first electrode 1101 can be determined as It is assumed that the above-described effect can be sufficiently obtained by assuming an arbitrary position of the light emitting layer from which light is obtained as a light emitting region.

Since the light-emitting element illustrated in FIG. 5C has a microcavity structure, light having different wavelengths (monochromatic light) can be extracted even when the light-emitting element has the same EL layer. Accordingly, there is no need for separate coloring (for example, RGB) for obtaining different emission colors. Therefore, it is easy to realize high definition. A combination with a colored layer (color filter) is also possible. Furthermore, since it is possible to increase the emission intensity of the specific wavelength in the front direction, it is possible to reduce power consumption.

The light-emitting element illustrated in FIG. 5E is an example of the light-emitting element having the tandem structure illustrated in FIG. 5B. As illustrated, three EL layers (1103a, 1103b, and 1103c) are charge generation layers. (1104a, 1104b) are stacked. Note that the three EL layers (1103a, 1103b, 1103c) each have a light emitting layer (1113a, 1113b, 1113c), and the light emission colors of the light emitting layers can be freely combined. For example, the light emitting layer 1113a can be blue, the light emitting layer 1113b can be red, green, or yellow, and the light emitting layer 1113c can be blue, but the light emitting layer 1113a can be red, and the light emitting layer 1113b can be blue, green, or yellow. In any case, the light emitting layer 1113c may be red.

Note that in the above light-emitting element, at least one of the first electrode 1101 and the second electrode 1102 is a light-transmitting electrode (a transparent electrode, a semi-transmissive / semi-reflective electrode, or the like). When the light-transmitting electrode is a transparent electrode, the transparent electrode has a visible light transmittance of 40% or more. In the case of a semi-transmissive / semi-reflective electrode, the visible light reflectance of the semi-transmissive / semi-reflective electrode is 20% to 80%, preferably 40% to 70%. These electrodes preferably have a resistivity of 1 × 10 ⁻² Ωcm or less.

In the light-emitting element described above, when one of the first electrode 1101 and the second electrode 1102 is a reflective electrode (reflective electrode), the reflectance of visible light of the reflective electrode is 40 % To 100%, preferably 70% to 100%. The electrode preferably has a resistivity of 1 × 10 ⁻² Ωcm or less.

<< Specific structure and manufacturing method of light-emitting element >>
Next, a specific structure and manufacturing method of the light-emitting element will be described with reference to FIGS. Here, a light-emitting element having the tandem structure illustrated in FIG. 5B and including a microcavity structure is also described with reference to FIG. In the case where the light-emitting element illustrated in FIG. 5D has a microcavity structure, the first electrode 1101 is formed as a reflective electrode, and the second electrode 1102 is formed as a semi-transmissive / semi-reflective electrode. Therefore, a desired electrode material can be formed by using a single layer or a plurality of layers and forming a single layer or a stacked layer. Note that the second electrode 1102 is formed by selecting a material in the same manner as described above after the EL layer 1103b is formed. In addition, a sputtering method or a vacuum evaporation method can be used for manufacturing these electrodes.

<First electrode and second electrode>
As materials for forming the first electrode 1101 and the second electrode 1102, the following materials can be used in appropriate combination as long as the functions of both electrodes described above can be satisfied. For example, a metal, an alloy, an electrically conductive compound, a mixture thereof, and the like can be used as appropriate. Specifically, an In—Sn oxide (also referred to as ITO), an In—Si—Sn oxide (also referred to as ITSO), an In—Zn oxide, and an In—W—Zn oxide can be given. In addition, aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn ), Indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y ), A metal such as neodymium (Nd), and an alloy containing an appropriate combination thereof. In addition, elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr), europium (Eu), ytterbium ( It is possible to use rare earth metals such as Yb), alloys containing these in appropriate combinations, graphene, and the like.

In the light-emitting element illustrated in FIG. 5D, when the first electrode 1101 is an anode, the hole injection layer 1111a and the hole transport layer 1112a of the EL layer 1103a are sequentially formed over the first electrode 1101 by a vacuum evaporation method. Stacked. After the EL layer 1103a and the charge generation layer 1104 are formed, the hole injection layer 1111b and the hole transport layer 1112b of the EL layer 1103b are sequentially stacked on the charge generation layer 1104 in the same manner.

<Hole injection layer and hole transport layer>
The hole injection layer (1111, 1111a, 1111b) is a layer for injecting holes into the EL layers (1103, 1103a, 1103b) from the first electrode 1101 and the intermediate layer (1104) which are anodes. It is a layer containing a material having a high hole injection property.

Examples of the material having a high hole injection property include transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (abbreviation: CuPC), 4,4′-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl ( Abbreviation: DPAB), N, N′-bis {4- [bis (3-methylphenyl) amino] phenyl} -N, N′-diphenyl- (1,1′-biphenyl) -4,4′-diamine ( An aromatic amine compound such as abbreviation (DNTPD) or a polymer such as poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (abbreviation: PEDOT / PSS) can be used.

As a material having a high hole-injecting property, a composite material including a hole-transporting material and an acceptor material (electron-accepting material) can also be used. In this case, electrons are extracted from the hole transporting material by the acceptor material and holes are generated in the hole injection layer (1111, 1111a, 1111b), and the hole transporting layer (1112, 1112a, 1112b) is passed through. Holes are injected into the light emitting layer (1113, 1113a, 1113b). Note that the hole injection layer (1111, 1111a, 1111b) may be formed as a single layer made of a composite material including a hole transporting material and an acceptor material (electron accepting material). The material and the acceptor material (electron-accepting material) may be stacked in separate layers.

The hole transport layer (1112, 1112a, 1112b) transports holes injected from the first electrode 1101 to the light emitting layer (1113, 1113a, 1113b) by the hole injection layer (1111, 1111a, 1111b). Is a layer. Note that the hole transport layers (1112, 1112a, and 1112b) are layers including a hole transport material. As a hole transporting material used for the hole transporting layer (1112, 1112a, 1112b), a material having a HOMO level which is the same as or close to the HOMO level of the hole injection layer (1111, 1111a, 1111b) is used. Is preferred.

As the acceptor material used for the hole-injection layer (1111, 1111a, 1111b), an oxide of a metal belonging to Groups 4 to 8 in the periodic table can be used. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle. In addition, organic acceptors such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can be used. Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ₄ -TCNQ), chloranil, 2,3,6,7,10,11 -Hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) or the like can be used.

As a hole transporting material used for the hole injection layer (1111, 1111a, 1111b) and the hole transport layer (1112, 1112a, 1112b), a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or more is used. preferable. Note that other than these substances, any substance that has a property of transporting more holes than electrons can be used.

As the hole transporting material, a π-electron rich heteroaromatic compound (for example, a carbazole derivative or an indole derivative) or an aromatic amine compound is preferable. As a specific example, 4,4′-bis [N- (1-naphthyl) is preferable. ) -N-phenylamino] biphenyl (abbreviation: NPB or α-NPD), N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4 '-Diamine (abbreviation: TPD), 4,4'-bis [N- (spiro-9,9'-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB), 4-phenyl-4 '-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: mBPAFLP) ), 4-phenyl-4 ′-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBA1BP), 3- [4- (9-phenanthryl) -phenyl] -9-phenyl-9H -Carbazole (abbreviation: PCPPn),
N- (4-biphenyl) -N- (9,9-dimethyl-9H-fluoren-2-yl) -9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N- (1,1 ′ -Biphenyl-4-yl) -N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl] -9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) 4,4 '-Diphenyl-4''-(9-phenyl-9-H-carbazol-3-yl) triphenylamine (abbreviation: PCBBi1BP), 4- (1-naphthyl) -4'-(9-phenyl-9H- Carbazol-3-yl) -triphenylamine (abbreviation: PCBANB), 4,4′-di (1-naphthyl) -4 ″-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation) : PC NBB), 9,9-dimethyl-N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl] fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl] spiro-9,9′-bifluoren-2-amine (abbreviation: PCBASF), 4,4 ′, 4 ″ -tris (carbazole-9 -Yl) triphenylamine (abbreviation: TCTA), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [ N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenyl Amino] bi Compounds having an aromatic amine skeleton such as phenyl (abbreviation: BSPB), 1,3-bis (N-carbazolyl) benzene (abbreviation: mCP), 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP) 3,6-bis (3,5-diphenylphenyl) -9-phenylcarbazole (abbreviation: CzTP), 3,3′-bis (9-phenyl-9H-carbazole) (abbreviation: PCCP), 3- [N -(9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenyl Amino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9-phenylcarbazol-3-yl) amino -9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB), 9- [4- (10-phenyl-9-anthracenyl) phenyl ] -9H-carbazole (abbreviation: CzPA) and other compounds having a carbazole skeleton, 4,4 ′, 4 ″-(benzene-1,3,5-triyl) tri (dibenzothiophene) (abbreviation: DBT3P-II) 2,8-diphenyl-4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl] dibenzothiophene (abbreviation: DBTFLP-III), 4- [4- (9-phenyl-9H-fluorene) -9-yl) phenyl] -6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) and other compounds having a thiophene skeleton, 4 , 4 ′, 4 ″-(benzene-1,3,5-triyl) tri (dibenzofuran) (abbreviation: DBF3P-II), 4- {3- [3- (9-phenyl-9H-fluorene-9- Yl) phenyl] phenyl} dibenzofuran (abbreviation: mmDBFFLBi-II) and the like.

Further, poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4- {N ′-[4- (4-diphenylamino)] Phenyl] phenyl-N′-phenylamino} phenyl) methacrylamide] (abbreviation: PTPDMA) poly [N, N′-bis (4-butylphenyl) -N, N′-bis (phenyl) benzidine] (abbreviation: Poly High molecular compounds such as -TPD) can also be used.

However, the hole transporting material is not limited to the above, and a hole injection layer (1111, 1111a, 1111b) and a hole transporting layer may be used as a hole transporting material by combining one or more known various materials. (1112, 1112a, 1112b). Note that each of the hole transport layers (1112, 1112a, and 1112b) may be formed of a plurality of layers. That is, for example, a first hole transport layer and a second hole transport layer may be laminated.

In the light-emitting element illustrated in FIG. 5D, the light-emitting layer 1113a is formed over the hole-transport layer 1112a of the EL layer 1103a by a vacuum evaporation method. In addition, after the EL layer 1103a and the charge generation layer 1104 are formed, a light emitting layer 1113b is formed by a vacuum evaporation method over the hole transport layer 1112b of the EL layer 1103b.

<Light emitting layer>
The light emitting layers (1113, 1113a, 1113b, 1113c) are layers containing a light emitting substance. Note that as the light-emitting substance, a substance exhibiting a luminescent color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used. In addition, by using different light-emitting substances for the plurality of light-emitting layers (1113a, 1113b, 1113c), a structure exhibiting different light emission colors (for example, white light emission obtained by combining light emission colors having complementary colors) can be obtained. . Furthermore, a stacked structure in which one light emitting layer includes different light emitting substances may be used.

In addition, the light-emitting layer (1113, 1113a, 1113b, 1113c) may include one or more organic compounds (host material, assist material) in addition to the light-emitting substance (guest material). As the one or more kinds of organic compounds, one or both of a hole transporting material and an electron transporting material described in this embodiment can be used.

There is no particular limitation on a light-emitting substance that can be used for the light-emitting layers (1113, 1113a, 1113b, and 1113c). A luminescent substance that can be converted into luminescence can be used.

Examples of other luminescent substances include the following.

Examples of the light-emitting substance that converts singlet excitation energy into light emission include substances that emit fluorescence (fluorescent materials). For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzos Examples include quinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. In particular, a pyrene derivative is preferable because of its high emission quantum yield. Specific examples of the pyrene derivative include N, N′-bis (3-methylphenyl) -N, N′-bis [3- (9-phenyl-9H-fluoren-9-yl) phenyl] pyrene-1,6. -Diamine (1,6mMemFLPAPrn), (N, N'-diphenyl-N, N'-bis [4- (9-phenyl-9H-fluoren-9-yl) phenyl] pyrene-1,6-diamine) (1 , 6FLPAPrn), N, N′-bis (dibenzofuran-2-yl) -N, N′-diphenylpyrene-1,6-diamine (1,6FrAPrn), N, N′-bis (dibenzothiophen-2-yl) ) -N, N′-diphenylpyrene-1,6-diamine (1,6ThAPrn), N, N ′-(pyrene-1,6-diyl) bis [(N-phenylbenzo [b] naphtho [1,2 -D] Lan) -6-amine] (abbreviation: 1,6BnfAPrn), N, N '-(pyrene-1,6-diyl) bis [(N-phenylbenzo [b] naphtho [1,2-d] furan)- 8-amine] (abbreviation: 1,6BnfAPrn-02), N, N ′-(pyrene-1,6-diyl) bis [(6, N-diphenylbenzo [b] naphtho [1,2-d] furan) -8-amine] (abbreviation: 1,6BnfAPrn-03).

In addition, 5,6-bis [4- (10-phenyl-9-anthryl) phenyl] -2,2′-bipyridine (abbreviation: PAP2BPy), 5,6-bis [4 ′-(10-phenyl-) 9-anthryl) biphenyl-4-yl] -2,2′-bipyridine (abbreviation: PAPP2BPy), N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenyl Stilbene-4,4′-diamine (abbreviation: YGA2S), 4- (9H-carbazol-9-yl) -4 ′-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), 4- ( 9H-carbazol-9-yl) -4 ′-(9,10-diphenyl-2-anthryl) triphenylamine (abbreviation: 2YGAPPA), N, 9-diphenyl-N- [4- (10 Phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: PCAPA), 4- (10-phenyl-9-anthryl) -4 ′-(9-phenyl-9H-carbazol-3-yl) Triphenylamine (abbreviation: PCBAPA), 4- [4- (10-phenyl-9-anthryl) phenyl] -4 ′-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBAPBA) Perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N, N ″-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene) bis [N, N ′, N′-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N, 9-diphenyl-N- [4- (9 10-diphenyl-2-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: 2PCAPPA), N- [4- (9,10-diphenyl-2-anthryl) phenyl] -N, N ′, N ′ -Triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) or the like can be used.

Examples of the light-emitting substance that converts triplet excitation energy into light emission include a substance that emits phosphorescence (phosphorescent material) and a thermally activated delayed fluorescence (TADF) material that exhibits thermally activated delayed fluorescence. .

Examples of phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. Since these exhibit different emission colors (emission peaks) for each substance, they are appropriately selected and used as necessary.

Examples of phosphorescent materials that exhibit blue or green color and whose emission spectrum peak wavelength is 450 nm or more and 570 nm or less include the following substances.

For example, tris [2- {5- (2-methylphenyl) -4- (2,6-dimethylphenyl) -4H-1,2,4-triazol-3-yl-κN2} phenyl-κC] iridium (III ) (Abbreviation: [Ir (mpppz-dmp) ₃ ]), tris (5-methyl-3,4-diphenyl-4H-1,2,4-triazolato) iridium (III) (abbreviation: [Ir (Mptz) ₃ ], Tris [4- (3-biphenyl) -5-isopropyl-3-phenyl-4H-1,2,4-triazolate] iridium (III) (abbreviation: [Ir (iPrptz-3b) ₃ ]) Tris [ 3- (5-biphenyl) -5-isopropyl-4-phenyl-4H-1,2,4-triazolato] iridium (III) _{(abbreviation: Ir (iPr5btz) 3])} , 4 such as An organometallic complex having a triazole skeleton, tris [3-methyl-1- (2-methylphenyl) -5-phenyl-1H-1,2,4-triazolato] iridium (III) (abbreviation: [Ir (Mptz1- mp) ₃ ]), tris (1-methyl-2-phenyl-4-propyl-1H-1,2,4-triazolate) iridium (III) (abbreviation: [Ir (Prptz1-Me) ₃ ]) Organometallic complex having 1H-triazole skeleton, fac-tris [(2,6-diisopropylphenyl) -2-phenyl-1H-imidazole] iridium (III) (abbreviation: [Ir (iPrpmi) ₃ ]), tris [3 -(2,6-Dimethylphenyl) -7-methylimidazo [1,2-f] phenanthridinato] iridium (III) (abbreviation: [I _(Dmpimpt-Me) 3] an organometallic complex having an imidazole skeleton, such as), bis [2- (4 ', 6'-difluorophenyl) pyridinato -N, C ^2'] iridium (III) tetrakis (1-pyrazolyl ) Borate (abbreviation: FIr6), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: FIrpic), bis [2- (3 ′, 5 '-Bistrifluoromethylphenyl) pyridinato-N, C ^2' ] iridium (III) picolinate (abbreviation: [Ir (CF ₃ ppy) ₂ (pic)]), bis [2- (4 ', 6'-difluorophenyl) ) pyridinato -N, C ^{2 ']} iridium (III) acetylacetonate (abbreviation: FIracac Fenirupi having an electron withdrawing group such as) The derivative include organic metal complexes having a ligand.

Examples of the phosphorescent material which exhibits green or yellow and has an emission spectrum peak wavelength of 495 nm or more and 590 nm or less include the following substances.

For example, tris (4-methyl-6-phenylpyrimidinato) iridium (III) (abbreviation: [Ir (mppm) ₃ ]), tris (4-t-butyl-6-phenylpyrimidinato) iridium (III) (Abbreviation: [Ir (tBupppm) ₃ ]), (acetylacetonato) bis (6-methyl-4-phenylpyrimidinato) iridium (III) (abbreviation: [Ir (mppm) ₂ (acac)]), ( Acetylacetonato) bis (6-tert-butyl-4-phenylpyrimidinato) iridium (III) (abbreviation: [Ir (tBupppm) ₂ (acac)]), (acetylacetonato) bis [6- (2- Norbornyl) -4-phenylpyrimidinato] iridium (III) (abbreviation: [Ir (nbppm) ₂ (acac)]), (acetylacetona G) Bis [5-methyl-6- (2-methylphenyl) -4-phenylpyrimidinato] iridium (III) (abbreviation: [Ir (mpmppm) ₂ (acac)]), (acetylacetonato) bis { 4,6-dimethyl-2- [6- (2,6-dimethylphenyl) -4-pyrimidinyl-κN3] phenyl-κC} iridium (III) (abbreviation: [Ir (dmppm-dmp) ₂ (acac)]) , (Acetylacetonato) bis (4,6-diphenylpyrimidinato) iridium (III) (abbreviation: [Ir (dppm) ₂ (acac)]), an organometallic iridium complex having a pyrimidine skeleton, isocyanatomethyl) bis (3,5-dimethyl-2-phenylpyrazinato) iridium (III) _{(abbreviation: [Ir (mppr-Me)} 2 (acac ]), (Acetylacetonato) bis (5-isopropyl-3-methyl-2-phenylpyrazinato) iridium (III) (abbreviation: [Ir _(mppr-iPr) pyrazine skeleton, such as 2 (acac)]) , Tris (2-phenylpyridinato-N, C ^{2 ′} ) iridium (III) (abbreviation: [Ir (ppy) ₃ ]), bis (2-phenylpyridinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: [Ir (ppy) ₂ (acac)]), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: [Ir (bzq) ₂ ( acac)]), tris (benzo [h] quinolinato) iridium (III) _{(abbreviation: [Ir (bzq) 3]} ), tris (2-Fenirukinori DOO -N, C ^{2 ')} iridium (III) _{(abbreviation: [Ir (pq) 3]} ), bis (2-phenylquinolinato--N, C ^2') iridium (III) acetylacetonate (abbreviation: [Ir (Pq) ₂ (acac)]), an organometallic iridium complex having a pyridine skeleton, bis (2,4-diphenyl-1,3-oxazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation) : [Ir (dpo) ₂ (acac)]), bis {2- [4 ′-(perfluorophenyl) phenyl] pyridinato-N, C ^{2 ′} } iridium (III) acetylacetonate (abbreviation: [Ir (p _{-PF-ph) 2 (acac)} ]), bis (2-phenyl-benzothiazyl Zola DOO -N, C ^{2 ')} iridium (III) acetylacetonate (abbreviation: [Ir (bt ₂ (acac)]) other organometallic complexes such as tris (acetylacetonato) (monophenanthroline) terbium (III) _{(abbreviation: [Tb (acac) 3 (} Phen)]) include rare earth metal complex such as It is done.

Examples of the phosphorescent material which exhibits yellow or red and has an emission spectrum peak wavelength of 570 nm or more and 750 nm or less include the following substances.

For example, (diisobutyrylmethanato) bis [4,6-bis (3-methylphenyl) pyrimidinato] iridium (III) (abbreviation: [Ir (5 mdppm) ₂ (divm)]), bis [4,6-bis ( 3-methylphenyl) pyrimidinato] (dipivaloylmethanato) iridium (III) (abbreviation: [Ir (5 mdppm) ₂ (dpm)]), bis [4,6-di (naphthalen-1-yl) pyrimidinato] ( An organometallic complex having a pyrimidine skeleton such as dipivaloylmethanato) iridium (III) (abbreviation: [Ir (d1npm) ₂ (dpm)]), (acetylacetonato) bis (2,3,5-triphenyl) Pirajinato) iridium (III) _{(abbreviation: [Ir (tppr) 2 (} acac)]), bis (2,3,5-triphenylpyrazinato (Dipivaloylmethanato) iridium (III) _{(abbreviation: [Ir (tppr) 2 (} dpm)]), bis {4,6-dimethyl-2- [3- (3,5-dimethylphenyl) -5- Phenyl-2-pyrazinyl-κN] phenyl-κC} (2,6-dimethyl-3,5-heptanedionato-κ ² O, O ′) iridium (III) (abbreviation: [Ir (dmdppr-P) ₂ (divm) ], Bis {4,6-dimethyl-2- [5- (4-cyano-2,6-dimethylphenyl) -3- (3,5-dimethylphenyl) -2-pyrazinyl-κN] phenyl-κC} (2,2,6,6-tetramethyl-3,5-heptanedionato-κ ² O, O ′) iridium (III) (abbreviation: [Ir (dmdppr-dmCP) ₂ (dpm)]), (acetylacetonato ) Screw [2 -Methyl-3-phenylquinoxalinato-N, C ^{2 ′} ] iridium (III) (abbreviation: [Ir (mpq) ₂ (acac)]), (acetylacetonato) bis (2,3-diphenylquinoxalinato -N, C2 ^' ) iridium (III) (abbreviation: [Ir (dpq) ₂ (acac)]), (acetylacetonato) bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium (III) (Abbreviation: [Ir (Fdpq) ₂ (acac)]) or an organometallic complex having a pyrazine skeleton, or tris (1-phenylisoquinolinato-N, C ^{2 ′} ) iridium (III) (abbreviation: [Ir (Piq) ₃ ]), bis (1-phenylisoquinolinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: [Ir (piq) ₂ (aca c)])) of an organometallic complex having a pyridine skeleton, 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin platinum (II) (abbreviation: [PtOEP]) Platinum complexes such as tris (1,3-diphenyl-1,3-propanedionato) (monophenanthroline) europium (III) (abbreviation: [Eu (DBM) ₃ (Phen)]), tris [1- (2 -Thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: [Eu (TTA) ₃ (Phen)]).

As an organic compound (host material, assist material) used for the light emitting layer (1113, 1113a, 1113b, 1113c), one or more kinds of substances having an energy gap larger than that of the light emitting substance (guest material) are selected. Use it.

When the light-emitting substance is a fluorescent material, it is preferable to use an organic compound having a large singlet excited state energy level and a small triplet excited state energy level as the host material. For example, it is preferable to use an anthracene derivative or a tetracene derivative. Specifically, 9-phenyl-3- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: PCzPA), 3- [4- (1-naphthyl) -phenyl] -9 -Phenyl-9H-carbazole (abbreviation: PCPN), 9- [4- (10-phenyl-9-anthracenyl) phenyl] -9H-carbazole (abbreviation: CzPA), 7- [4- (10-phenyl-9- Anthryl) phenyl] -7H-dibenzo [c, g] carbazole (abbreviation: cgDBCzPA), 6- [3- (9,10-diphenyl-2-anthryl) phenyl] -benzo [b] naphtho [1,2-d ] Furan (abbreviation: 2 mBnfPPA), 9-phenyl-10- {4- (9-phenyl-9H-fluoren-9-yl) -biphenyl-4'-yl} -anthra Emissions (abbreviation: FLPPA), 5,12 diphenyltetracene, 5,12-bis (biphenyl-2-yl) tetracene, and the like.

When the light-emitting substance is a phosphorescent material, an organic compound having a triplet excitation energy larger than the triplet excitation energy (energy difference between the ground state and the triplet excited state) of the light-emitting substance may be selected as the host material. In this case, in addition to zinc and aluminum-based metal complexes, oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, pyrimidine derivatives, triazine derivatives, pyridine derivatives In addition to bipyridine derivatives and phenanthroline derivatives, aromatic amines and carbazole derivatives can be used.

More specifically, for example, the following hole transporting materials and electron transporting materials can be used as the host material.

Examples of these host materials having a high hole transporting property include N, N′-di (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [ N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), N, N′-bis {4- [bis (3-methylphenyl) amino] phenyl} -N, N′-diphenyl -(1,1′-biphenyl) -4,4′-diamine (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B) An aromatic amine compound such as

In addition, 3- [N- (4-diphenylaminophenyl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-bis [N- (4-diphenylaminophenyl) -N-phenyl Amino] -9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis [N- (4-diphenylaminophenyl) -N- (1-naphthyl) amino] -9-phenylcarbazole (abbreviation: PCzTPN2), 3 -[N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis [N- (9-phenylcarbazol-3-yl)- N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9 Phenyl-3-yl) amino] phenyl carbazole (abbreviation: PCzPCNl) can be mentioned carbazole derivatives such. As other carbazole derivatives, 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB) ), 1,4-bis [4- (N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene and the like can also be used.

As a host material having a high hole-transport property, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB or α-NPD), N, N ′ -Bis (3-methylphenyl) -N, N'-diphenyl- [1,1'-biphenyl] -4,4'-diamine (abbreviation: TPD), 4,4 ', 4 "-tris (carbazole- 9-yl) triphenylamine (abbreviation: TCTA), 4,4 ′, 4 ″ -tris [N- (1-naphthyl) -N-phenylamino] triphenylamine (abbreviation: 1′-TNATA), 4 , 4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino ] Triphenylamine (abbreviation m-MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB), 4-phenyl-4 ′-(9 -Phenylfluoren-9-yl) triphenylamine (abbreviation: BPAFLP), 4-phenyl-3 '-(9-phenylfluoren-9-yl) triphenylamine (abbreviation: mBPAFLP), N- (9,9f- Dimethyl-9H-fluoren-2-yl) -N- {9,9-dimethyl-2- [N′-phenyl-N ′-(9,9-dimethyl-9H-fluoren-2-yl) amino] -9H -Fluoren-7-yl} phenylamine (abbreviation: DFLADFL), N- (9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl) diphenylamine (abbreviation: DPNF), 2- [N- (4-diphenylaminophenyl) -N-phenylamino] spiro-9,9′-bifluorene (abbreviation: DPASF), 4-phenyl-4 ′-(9-phenyl-9H-carbazole) -3-yl) triphenylamine (abbreviation: PCBA1BP), 4,4′-diphenyl-4 ″-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBBi1BP), 4- ( 1-naphthyl) -4 ′-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBBANB), 4,4′-di (1-naphthyl) -4 ″-(9-phenyl) -9H-carbazol-3-yl) triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl- (9-phenyl-9H-carbazole-3- ) Amine (abbreviation: PCA1BP), N, N′-bis (9-phenylcarbazol-3-yl) -N, N′-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N, N ′, N ″ -triphenyl-N, N ′, N ″ -tris (9-phenylcarbazol-3-yl) benzene-1,3,5-triamine (abbreviation: PCA3B), N- (4-biphenyl)- N- (9,9-dimethyl-9H-fluoren-2-yl) -9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N- (1,1′-biphenyl-4-yl)- N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl] -9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 9,9-dimethyl-N-phenyl- N- [ -(9-phenyl-9H-carbazol-3-yl) phenyl] fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N- [4- (9-phenyl-9H-carbazol-3-yl) phenyl ] Spiro-9,9′-bifluoren-2-amine (abbreviation: PCBASF), 2- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] spiro-9,9′-bifluorene (abbreviation) : PCASF), 2,7-bis [N- (4-diphenylaminophenyl) -N-phenylamino] -spiro-9,9'-bifluorene (abbreviation: DPA2SF), N- [4- (9H-carbazole- 9-yl) phenyl] -N- (4-phenyl) phenylaniline (abbreviation: YGA1BP), N, N′-bis [4- (carbazol-9-yl) phenyl An aromatic amine compound such as —N, N′-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F) can be used. 3- [4- (1-naphthyl) -phenyl] -9-phenyl-9H-carbazole (abbreviation: PCPN), 3- [4- (9-phenanthryl) -phenyl] -9-phenyl-9H-carbazole (Abbreviation: PCPPn), 3,3′-bis (9-phenyl-9H-carbazole) (abbreviation: PCCP), 1,3-bis (N-carbazolyl) benzene (abbreviation: mCP), 3,6-bis ( 3,5-diphenylphenyl) -9-phenylcarbazole (abbreviation: CzTP), 4- {3- [3- (9-phenyl-9H-fluoren-9-yl) phenyl] phenyl} dibenzofuran (abbreviation: mmDBFFLBi-II) ), 4,4 ′, 4 ″-(benzene-1,3,5-triyl) tri (dibenzofuran) (abbreviation: DBF3P-II), 1,3,5-tri (di) Nzothiophen-4-yl) -benzene (abbreviation: DBT3P-II), 2,8-diphenyl-4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl] dibenzothiophene (abbreviation: DBTFLP-III) ), 4- [4- (9-phenyl-9H-fluoren-9-yl) phenyl] -6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), 4- [3- (triphenylene-2-yl) phenyl] A carbazole compound such as dibenzothiophene (abbreviation: mDBTPTp-II), a thiophene compound, a furan compound, a fluorene compound, a triphenylene compound, a phenanthrene compound, or the like can be used.

Examples of the host material having a high electron transporting property include tris (8-quinolinolato) aluminum (III) (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (III) (abbreviation: Almq ₃ ), and bis. (10-hydroxybenzo [h] quinolinato) beryllium (II) (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), bis ( Metal complexes having a quinoline skeleton or a benzoquinoline skeleton, such as 8-quinolinolato) zinc (II) (abbreviation: Znq). In addition, bis [2- (2-benzoxazolyl) phenolato] zinc (II) (abbreviation: ZnPBO), bis [2- (2-benzothiazolyl) phenolato] zinc (II) (abbreviation: ZnBTZ), etc. A metal complex having an oxazole-based or thiazole-based ligand can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 9- [4- (5-phenyl-1,3,4-oxa) Oxadiazole derivatives such as diazol-2-yl) phenyl] -9H-carbazole (abbreviation: CO11), and 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl)- Triazole derivatives such as 1,2,4-triazole (abbreviation: TAZ) and 2,2 ′, 2 ″-(1,3,5-benzenetriyl) tris (1-phenyl-1H-benzimidazole) (Abbreviation: TPBI 2- [3- (dibenzothiophen-4-yl) phenyl] -1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), a compound having an imidazole skeleton (particularly a benzimidazole derivative), Compounds having an oxazole skeleton such as 4′-bis (5-methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs) (particularly benzoxazole derivatives), bathophenanthroline (abbreviation: Bphen), bathocuproin (abbreviation: BCP) Phenanthroline derivatives such as 2,9-bis (naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), and 2- [3- (dibenzothiophen-4-yl) phenyl ] Dibenzo [f, h] quinoxaline (abbreviation: 2mDB) PDBq-II), 2- [3 ′-(dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline (abbreviation: 2mDBTBPDBq-II), 2- [3 ′-(9H-carbazole) -9-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline (abbreviation: 2mCzBPDBq), 2- [4- (3,6-diphenyl-9H-carbazol-9-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 2CzPDBq-III), 7- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 7mDBTPDBq-II), and 6- [3- (dibenzothiophene) -4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 6mDBTPDBq-II), 4,6-bis [ 3- (phenanthrene-9-yl) phenyl] pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis [3- (4-dibenzothienyl) phenyl] pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6 A heterocyclic compound having a diazine skeleton such as -bis [3- (9H-carbazol-9-yl) phenyl] pyrimidine (abbreviation: 4,6mCzP2Pm), 2- {4- [3- (N-phenyl-9H- A heterocyclic compound having a triazine skeleton such as carbazol-3-yl) -9H-carbazol-9-yl] phenyl} -4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn); -Bis [3- (9H-carbazol-9-yl) phenyl] pyridine (abbreviation: 35DCzPPy), 1,3,5-tri [3- ( - pyridyl) phenyl] benzene (abbreviation: TmPyPB) can also be used a heterocyclic compound having a pyridine skeleton such. In addition, poly (2,5-pyridinediyl) (abbreviation: PPy), poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5-diyl)] (abbreviation: PF -Py), poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2′-bipyridine-6,6′-diyl)] (abbreviation: PF-BPy) Molecular compounds can also be used.

Examples of the host material include condensed polycyclic aromatic compounds such as anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo [g, p] chrysene derivatives. Specifically, 9,10-diphenylanthracene ( Abbreviations: DPAnth), N, N-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: CzA1PA), 4- (10-phenyl-9- Anthryl) triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N, 9-diphenyl-N- {4- [4- (10-phenyl-9-anthryl) phenyl] phenyl} -9H-carbazol-3-amine (Abbreviation: PCAPBA) 2PCAPA, 6,12-dimethoxy-5,11-diphenyl Sen, DBC1, 9- [4- (10-phenyl-9-anthracenyl) phenyl] -9H-carbazole (abbreviation: CzPA), 3,6-diphenyl-9- [4- (10-phenyl-9-anthryl) Phenyl] -9H-carbazole (abbreviation: DPCzPA), 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 2 -Tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 9,9'-bianthryl (abbreviation: BANT), 9,9 '-(stilbene-3,3'-diyl ) Diphenanthrene (abbreviation: DPNS), 9,9 ′-(stilbene-4,4′-diyl) diphenanthrene (abbreviation: DPNS2), 1, 3, 5 Tri (1-pyrenyl) benzene (abbreviation: TPB3), or the like can be used.

In the case where a plurality of organic compounds are used for the light emitting layer (1113, 1113a, 1113b, 1113c), two kinds of compounds (first compound and second compound) that form an exciplex are mixed with an organometallic complex. It is preferable to use it. In this case, various organic compounds can be used in appropriate combination. However, in order to efficiently form an exciplex, a compound that easily receives holes (hole transporting material) and a compound that easily receives electrons (electrons) A combination with a transportable material) is particularly preferred. Note that as specific examples of the hole-transport material and the electron-transport material, the materials described in this embodiment can be used. With this configuration, high efficiency, low voltage, and long life can be realized simultaneously.

TADF material is a material that can up-convert triplet excited state to singlet excited state with a little thermal energy (interverse crossing) and efficiently emits light (fluorescence) from singlet excited state. is there. As a condition for efficiently obtaining thermally activated delayed fluorescence, the energy difference between the triplet excited level and the singlet excited level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. Can be mentioned. In addition, delayed fluorescence in the TADF material refers to light emission having a remarkably long lifetime while having the same spectrum as normal fluorescence. The lifetime is 10 ⁻⁶ seconds or longer, preferably 10 ⁻³ seconds or longer.

Examples of the TADF material include fullerene and derivatives thereof, acridine derivatives such as proflavine, and eosin. In addition, metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), and the like can be given. Examples of the metal-containing porphyrin include a protoporphyrin-tin fluoride complex (abbreviation: SnF ₂ (Proto IX)), a mesoporphyrin-tin fluoride complex (abbreviation: SnF ₂ (Meso IX)), and hematoporphyrin-tin fluoride. Complex (abbreviation: SnF ₂ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviation: SnF ₂ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviation: SnF ₂ (OEP) )), Etioporphyrin-tin fluoride complex (abbreviation: SnF ₂ (Etio I)), octaethylporphyrin-platinum chloride complex (abbreviation: PtCl ₂ OEP), and the like.

In addition, 1-biphenyl-4,6-bis (11-phenylindolo [1,3-a] carbazol-11-yl) -1,3,5-triazine (abbreviation: PIC-TRZ), 1, 4-diphenyl-6- [3- (9-phenylcarbazol-3-yl) carbazol-9-yl] phenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 1-phenoxazine-4,6-diphenyl -1,3,5-triazine (abbreviation: PXZ-TRZ), 3- [4- (5-phenyl-5,10-dihydrophenazine) phenyl] -4,5-diphenyl-1,1,4-triazole ( Abbreviations: PPZ-3TPT), 3- [9,9-dimethylacridin-10 (9H) -yl)]-9H-xanthen-9-one (abbreviation: ACRXTN), bis [4- (9,9-dimethyl) Ru-9,10-dihydroacridine) phenyl] sulfon (abbreviation: DMAC-DPS), 10-phenyl-10H, 10′H-spiro [acridine-9,9′-anthracene] -10′-one (abbreviation: ACRSA) A heterocyclic compound having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded increases both the donor property of the π-electron rich heteroaromatic ring and the acceptor property of the π-electron deficient heteroaromatic ring. This is particularly preferable because the energy difference between the singlet excited state and the triplet excited state becomes small.

In addition, when using TADF material, it can also be used in combination with another organic compound. In particular, it is preferable to form a light-emitting layer by mixing a TADF material and an organometallic complex. With this configuration, high efficiency, low voltage, and long life can be realized simultaneously.

In the light-emitting element illustrated in FIG. 5D, an electron-transport layer 1114a is formed over the light-emitting layer 1113a of the EL layer 1103a by a vacuum evaporation method. In addition, after the EL layer 1103a and the charge generation layer 1104 are formed, the electron transport layer 1114b is formed over the light-emitting layer 1113b of the EL layer 1103b by a vacuum evaporation method.

<Electron transport layer>
The electron transport layer (1114, 1114a, 1114b) is a layer for transporting electrons injected from the second electrode 1102 to the light emitting layer (1113, 1113a, 1113b) by the electron injection layer (1115, 1115a, 1115b). . Note that the electron transport layers (1114, 1114a, and 1114b) are layers containing an electron transport material. The electron transporting material used for the electron transporting layer (1114, 1114a, 1114b) is preferably a substance having an electron mobility of 1 × 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more electrons than holes can be used.

Examples of electron transporting materials include metal complexes having quinoline ligand, benzoquinoline ligand, oxazole ligand, or thiazole ligand, oxadiazole derivatives, triazole derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, etc. Is mentioned. In addition, a π-electron deficient heteroaromatic compound such as a nitrogen-containing heteroaromatic compound can also be used.

Specifically, Alq ₃ , tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), BAlq, bis [2 Metal complexes such as-(2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ), 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), OXD-7, 3- (4-tert-butylphenyl) -4 -Phenyl-5- (4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4- Ethylphenyl) -5- (4-biphenylyl) -1,2,4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: Bphen), bathocuproin (abbreviation: BCP), 4,4′-bis (5 -Heteroaromatic compounds such as methylbenzoxazol-2-yl) stilbene (abbreviation: BzOs), 2- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 2mDBTPDBq-II) ), 2- [3 ′-(dibenzothiophen-4-yl) biphenyl-3-yl] dibenzo [f, h] quinoxaline (abbreviation: 2mDBTBPDBq-II), 2- [4- (3,6-diphenyl-9H) -Carbazole-9-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 2CzPDBq-III), 7 [3- (Dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline (abbreviation: 7mDBTPDBq-II), 6- [3- (dibenzothiophen-4-yl) phenyl] dibenzo [f, h] quinoxaline A quinoxaline or dibenzoquinoxaline derivative such as (abbreviation: 6mDBTPDBq-II) can be used.

In addition, poly (2,5-pyridinediyl) (abbreviation: PPy), poly [(9,9-dihexylfluorene-2,7-diyl) -co- (pyridine-3,5-diyl)] (abbreviation: PF -Py), poly [(9,9-dioctylfluorene-2,7-diyl) -co- (2,2′-bipyridine-6,6′-diyl)] (abbreviation: PF-BPy) Molecular compounds can also be used.

Further, the electron-transport layer (1114, 1114a, 1114b) is not limited to a single layer, and may have a structure in which two or more layers made of the above substances are stacked.

In the light-emitting element shown in FIG. 5D, an electron injection layer 1114a is formed over the electron transport layer 1114a of the EL layer 1103a by a vacuum evaporation method. After that, an EL layer 1103a and a charge generation layer 1104 are formed and formed up to the electron transport layer 1114b of the EL layer 1103b, and then an electron injection layer 1114b is formed thereon by a vacuum evaporation method.

<Electron injection layer>
The electron injection layers (1115, 1115a, 1115b) are layers containing a substance having a high electron injection property. The electron injection layer (1115, 1115a, 1115b) includes an alkali metal such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), lithium oxide (LiO _x ), or the like. Earth metals or their compounds can be used. Alternatively, a rare earth metal compound such as erbium fluoride (ErF ₃ ) can be used. Further, electride may be used for the electron injection layer (1115, 1115a, 1115b). Examples of the electride include a substance obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum. In addition, the substance which comprises the electron carrying layer (1114, 1114a, 1114b) mentioned above can also be used.

Alternatively, a composite material obtained by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer (1115, 1115a, 1115b). Such a composite material is excellent in electron injecting property and electron transporting property because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material excellent in transporting the generated electrons. Specifically, for example, the electron transport material (metal complex) used for the electron transport layer (1114, 1114a, 1114b) described above, for example. Or a heteroaromatic compound). The electron donor may be any substance that exhibits an electron donating property to the organic compound. Specifically, alkali metals, alkaline earth metals, and rare earth metals are preferable, and lithium, cesium, magnesium, calcium, erbium, ytterbium, and the like can be given. Alkali metal oxides and alkaline earth metal oxides are preferable, and lithium oxide, calcium oxide, barium oxide, and the like can be given. A Lewis base such as magnesium oxide can also be used. Alternatively, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can be used.

For example, in the case of amplifying light obtained from the light-emitting layer 1113b, the optical distance between the second electrode 1102 and the light-emitting layer 1103b is less than λ / 4 with respect to the wavelength of light exhibited by the light-emitting layer 1103b. It is preferable to form such that In this case, adjustment can be performed by changing the film thickness of the electron-transport layer 1114b or the electron-injection layer 1115b.

<Charge generation layer>
When a voltage is applied between the first electrode (anode) 1101 and the second electrode (cathode) 1102, the charge generation layer 1104 injects electrons into the EL layer 1103 a and holes into the EL layer 1103 b. Has the function of injecting. Note that the charge generation layer 1104 may have a structure in which an electron acceptor is added to a hole transporting material or a structure in which an electron donor (donor) is added to an electron transporting material. Good. Moreover, both these structures may be laminated | stacked. Note that by forming the charge generation layer 1104 using the above-described material, an increase in driving voltage in the case where an EL layer is stacked can be suppressed.

In the case where the charge generation layer 1104 has a structure in which an electron acceptor is added to a hole transporting material, any of the materials described in this embodiment can be used as the hole transporting material. Examples of the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ₄ -TCNQ), chloranil, and the like. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

In the case where the charge generation layer 1104 has a structure in which an electron donor is added to an electron transporting material, the materials described in this embodiment can be used as the electron transporting material. As the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, a metal belonging to Groups 2 and 13 of the periodic table, or an oxide or carbonate thereof can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, or the like is preferably used. An organic compound such as tetrathianaphthacene may be used as an electron donor.

Note that the EL layer 1103c in FIG. 5E may have a structure similar to that of the above-described EL layers (1103, 1103a, and 1103b). Further, the intermediate layers 1104a and 1104b may have the same structure as the above-described intermediate layer 1104.

<Board>
The light-emitting element described in this embodiment can be formed over various substrates. In addition, the kind of board | substrate is not limited to a specific thing. As an example of the substrate, a semiconductor substrate (for example, a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, Examples include a substrate having a tungsten foil, a flexible substrate, a laminated film, a paper containing a fibrous material, or a base film.

Note that examples of the glass substrate include barium borosilicate glass, aluminoborosilicate glass, and soda lime glass. Examples of flexible substrates, bonded films, base films, etc. are synthetic materials such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether sulfone (PES), acrylic, etc. Examples thereof include resin, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, polyamide, polyimide, aramid, epoxy, an inorganic vapor deposition film, and papers.

Note that for manufacturing the light-emitting element described in this embodiment, a vacuum process such as an evaporation method or a solution process such as a spin coating method or an inkjet method can be used. When vapor deposition is used, physical vapor deposition (PVD) such as sputtering, ion plating, ion beam vapor deposition, molecular beam vapor deposition, or vacuum vapor deposition, or chemical vapor deposition (CVD) is used. be able to. In particular, a functional layer (hole injection layer (1111, 1111a, 1111b), hole transport layer (1112, 1112a, 1112b), light emitting layer (1113, 1113a, 1113b, 1113c), electron transport included in the EL layer of the light emitting element. For the layers (1114, 1114a, 1114b), the electron injection layer (1115, 1115a, 1115b), and the charge generation layer (1104, 1104a, 1104b)), a vapor deposition method (vacuum vapor deposition method etc.), a coating method (dip coating method) , Die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexographic (letter printing) method, gravure method, microcontact And the like.

Note that each functional layer (hole injection layer (1111, 1111a, 1111b), hole transport layer (1112, 1112a, 1112b)) included in the EL layer (1103, 1103a, 1103b) of the light-emitting element described in this embodiment mode. The light emitting layer (1113, 1113a, 1113b, 1113c), the electron transport layer (1114, 1114a, 1114b), the electron injection layer (1115, 1115a, 1115b) and the charge generation layer (1104, 1104a, 1104b)) are described above. The material is not limited, and other materials can be used in combination as long as they can satisfy the function of each layer. For example, a high molecular compound (oligomer, dendrimer, polymer, etc.), a medium molecular compound (compound in the middle region between low and high molecules: molecular weight 400 to 4000), an inorganic compound (quantum dot material, etc.), etc. are used. it can. As the quantum dot material, a colloidal quantum dot material, an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used.

The structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 5)
In this embodiment, a light-emitting device which is one embodiment of the present invention will be described. Note that the light-emitting device illustrated in FIG. 6A is an active matrix light-emitting device in which a transistor (FET) 1202 over a first substrate 1201 and light-emitting elements (1203R, 1203G, 1203B, and 1203W) are electrically connected. The plurality of light emitting elements (1203R, 1203G, 1203B, and 1203W) have a common EL layer 1204, and the optical distance between the electrodes of each light emitting element depends on the emission color of each light emitting element. It has a tuned microcavity structure. Further, the light-emitting device is a top-emission light-emitting device in which light emission obtained from the EL layer 1204 is emitted through color filters (1206R, 1206G, and 1206B) formed over the second substrate 1205.

In the light-emitting device illustrated in FIG. 6A, the first electrode 1207 is formed to function as a reflective electrode. The second electrode 1208 is formed so as to function as a semi-transmissive / semi-reflective electrode. Note that the electrode material for forming the first electrode 1207 and the second electrode 1208 may be appropriately used with reference to the description of the other embodiments.

In FIG. 6A, for example, when the light emitting element 1203R is a red light emitting element, the light emitting element 1203G is a green light emitting element, the light emitting element 1203B is a blue light emitting element, and the light emitting element 1203W is a white light emitting element, FIG. ), The light emitting element 1203R is adjusted so that the optical distance 1206R is between the first electrode 1207 and the second electrode 1208, and the light emitting element 1203G includes the first electrode 1207 and the second electrode. The light-emitting element 1203B is adjusted so that the optical distance 1206B is between the first electrode 1207 and the second electrode 1208. Note that as illustrated in FIG. 6B, optical adjustment can be performed by stacking the conductive layer 1210R over the first electrode 1207 in the light-emitting element 1203R and stacking the conductive layer 1210G in the light-emitting element 1203G.

On the second substrate 1205, color filters (1206R, 1206G, 1206B) are formed. The color filter is a filter that passes a specific wavelength range of visible light and blocks the specific wavelength range. Therefore, as shown in FIG. 6A, red light emission can be obtained from the light emitting element 1203R by providing the color filter 1206R that allows only the red wavelength region to pass through the position overlapping the light emitting element 1203R. Further, by providing the color filter 1206G that allows only the green wavelength region to pass through at a position overlapping with the light emitting element 1203G, green light emission can be obtained from the light emitting element 1203G. Further, by providing the color filter 1206B that allows only the blue wavelength region to pass through at a position overlapping with the light emitting element 1203B, blue light emission can be obtained from the light emitting element 1203B. Note that the light-emitting element 1203W can emit white light without providing a color filter. Note that a black layer (black matrix) 1209 may be provided at an end of one type of color filter. Furthermore, the color filter (1206R, 1206G, 1206B) and the black layer 1209 may be covered with an overcoat layer using a transparent material.

6A shows a light emitting device having a structure (top emission type) in which light emission is extracted to the second substrate 1205 side, the first substrate on which the FET 1202 is formed as shown in FIG. 6C. A light emitting device having a structure (bottom emission type) in which light is extracted to the 1201 side may be used. Note that in the case of a bottom emission light-emitting device, the first electrode 1207 is formed to function as a semi-transmissive / semi-reflective electrode, and the second electrode 1208 is formed to function as a reflective electrode. The first substrate 1201 is at least a light-transmitting substrate. Further, the color filters (1206R ′, 1206G ′, 1206B ′) may be provided on the first substrate 1201 side than the light emitting elements (1203R, 1203G, 1203B) as shown in FIG. 6C.

FIG. 6A illustrates the case where the light-emitting element is a red light-emitting element, a green light-emitting element, a blue light-emitting element, or a white light-emitting element; however, the light-emitting element which is one embodiment of the present invention is limited to that structure. In other words, a structure having a yellow light emitting element or an orange light emitting element may be used. In addition, as a material used for EL layers (a light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc.) for manufacturing these light emitting elements, other embodiments are used. May be used as appropriate with reference to the description. In this case, it is necessary to select a color filter as appropriate in accordance with the emission color of the light emitting element.

With the above structure, a light-emitting device including a light-emitting element that exhibits a plurality of emission colors can be obtained.

Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

(Embodiment 6)
In this embodiment, a light-emitting device which is one embodiment of the present invention will be described.

By applying the element structure of the light-emitting element which is one embodiment of the present invention, an active matrix light-emitting device or a passive matrix light-emitting device can be manufactured. Note that an active matrix light-emitting device has a structure in which a light-emitting element and a transistor (FET) are combined. Therefore, both a passive matrix light-emitting device and an active matrix light-emitting device are included in one embodiment of the present invention. Note that the light-emitting element described in any of the other embodiments can be applied to the light-emitting device described in this embodiment.

In this embodiment, an active matrix light-emitting device is described with reference to FIGS.

7A is a top view of the light-emitting device, and FIG. 7B is a cross-sectional view taken along the chain line A-A ′ in FIG. 7A. The active matrix light-emitting device includes a pixel portion 1302, a driver circuit portion (source line driver circuit) 1303, and driver circuit portions (gate line driver circuits) (1304a and 1304b) provided over a first substrate 1301. . The pixel portion 1302 and the driver circuit portions 1303, 1304a, and 1304b) are sealed between the first substrate 1301 and the second substrate 1306 by a sealant 1305.

A lead wiring 1307 is provided over the first substrate 1301. The lead wiring 1307 is connected to the FPC 1308 which is an external input terminal. Note that the FPC 1308 transmits a signal (eg, a video signal, a clock signal, a start signal, a reset signal, or the like) and a potential from the outside to the driver circuit portions (1303, 1304a, and 1304b). Further, a printed wiring board (PWB) may be attached to the FPC 1308. Note that the state in which the FPC or PWB is attached is included in the light emitting device.

Next, a cross-sectional structure is shown in FIG.

The pixel portion 1302 is formed by a plurality of pixels including a FET (switching FET) 1311, a FET (current control FET) 1312, and a first electrode 1313 electrically connected to the FET 1312. Note that the number of FETs included in each pixel is not particularly limited, and can be appropriately provided as necessary.

The FETs 1309, 1310, 1311, and 1312 are not particularly limited, and for example, a staggered transistor or an inverted staggered transistor can be applied. Further, a transistor structure such as a top gate type or a bottom gate type may be used.

Note that there is no particular limitation on the crystallinity of the semiconductor that can be used for the FETs 1309, 1310, 1311, and 1312; amorphous semiconductors, semiconductors having crystallinity (microcrystalline semiconductors, polycrystalline semiconductors, single crystal semiconductors, Alternatively, a semiconductor having a crystal region in part) may be used. Note that it is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.

As these semiconductors, for example, Group 14 elements, compound semiconductors, oxide semiconductors, organic semiconductors, and the like can be used. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

The drive circuit unit 1303 includes an FET 1309 and an FET 1310. Note that the FET 1309 and the FET 1310 may be formed of a circuit including a unipolar transistor (N-type or P-type only) or a CMOS circuit including an N-type transistor and a P-type transistor. May be. In addition, a configuration in which a drive circuit is provided outside may be employed.

An end portion of the first electrode 1313 is covered with an insulator 1314. Note that the insulator 1314 can be formed using an organic compound such as a negative photosensitive resin or a positive photosensitive resin (acrylic resin), or an inorganic compound such as silicon oxide, silicon oxynitride, or silicon nitride. . It is preferable that an upper end portion or a lower end portion of the insulator 1314 have a curved surface having a curvature. Thereby, the coverage of the film formed in the upper layer of the insulating portion 1314 can be improved.

An EL layer 1315 and a second electrode 1316 are stacked over the first electrode 1313. The EL layer 1315 includes a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

Note that the structures and materials described in the other embodiments can be applied to the structure of the light-emitting element 1317 described in this embodiment. Note that although not shown here, the second electrode 1316 is electrically connected to an FPC 1308 which is an external input terminal.

In the cross-sectional view illustrated in FIG. 7B, only one light-emitting element 1317 is illustrated; however, in the pixel portion 1302, a plurality of light-emitting elements are arranged in a matrix. In the pixel portion 1302, light emitting elements capable of emitting three types (R, G, and B) of light emission can be selectively formed to form a light emitting device capable of full color display. In addition to the light emitting element that can obtain three types of light emission (R, G, B), for example, light emission that can emit light such as white (W), yellow (Y), magenta (M), and cyan (C). An element may be formed. For example, by adding the above-described light emitting elements capable of obtaining several types of light emission (R, G, B) to the light emitting elements capable of obtaining three types of light emission (R, G, B), effects such as improvement in color purity and reduction in power consumption can be obtained. Can do. Alternatively, a light emitting device capable of full color display may be obtained by combining with a color filter. Note that red (R), green (G), blue (B), cyan (C), magenta (M), yellow (Y), and the like can be used as the type of color filter.

The FET (1309, 1310, 1311, 1312) and the light emitting element 1317 over the first substrate 1301 are bonded to the first substrate 1301 with a sealant 1305 by attaching the second substrate 1306 and the first substrate 1301 to each other. 1301, the second substrate 1306, and a space 1318 surrounded by the sealant 1305. Note that the space 1318 may be filled with an inert gas (such as nitrogen or argon) or an organic substance (including the sealant 1305).

An epoxy resin or glass frit can be used for the sealing material 1305. Note that it is preferable to use a material that does not transmit moisture and oxygen as much as possible for the sealant 1305. In addition, as the second substrate 1306, a material that can be used for the first substrate 1301 can be used as well. Therefore, various substrates described in other embodiments can be used as appropriate. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiber-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used as the substrate. In the case where glass frit is used as the sealing material, the first substrate 1301 and the second substrate 1306 are preferably glass substrates from the viewpoint of adhesiveness.

As described above, an active matrix light-emitting device can be obtained.

In the case where an active matrix light-emitting device is formed over a flexible substrate, the FET and the light-emitting element may be directly formed over the flexible substrate, but the FET and the light-emitting element are formed over another substrate having a release layer. After forming, the FET and the light-emitting element may be peeled off by a peeling layer by applying heat, force, laser irradiation, and transferred to a flexible substrate. Note that as the peeling layer, for example, a laminated inorganic film of a tungsten film and a silicon oxide film, an organic resin film such as polyimide, or the like can be used. In addition to substrates that can form transistors, flexible substrates include paper substrates, cellophane substrates, aramid film substrates, polyimide film substrates, fabric substrates (natural fibers (silk, cotton, hemp), synthetic fibers ( Nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, and the like. By using these substrates, it is excellent in durability and heat resistance, and can be reduced in weight and thickness.

Note that the structure described in this embodiment can be combined with any of the structures described in other embodiments as appropriate.

(Embodiment 7)
In this embodiment, examples of various electronic devices and automobiles completed by applying the light-emitting device which is one embodiment of the present invention and the display device including the light-emitting element which is one embodiment of the present invention will be described.

8A to 8E include a housing 7000, a display portion 7001, a speaker 7003, an LED lamp 7004, operation keys 7005 (including a power switch or an operation switch), a connection terminal 7006, Sensor 7007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , Including a function of measuring inclination, vibration, odor, or infrared light), a microphone 7008, and the like.

FIG. 8A illustrates a mobile computer which can include a switch 7009, an infrared port 7010, and the like in addition to the above components.

FIG. 8B illustrates a portable image reproducing device (eg, a DVD reproducing device) provided with a recording medium, which includes a second display portion 7002, a recording medium reading portion 7011, and the like in addition to the above-described components. it can.

FIG. 8C illustrates a goggle type display which can include a second display portion 7002, a support portion 7012, an earphone 7013, and the like in addition to the above components.

FIG. 8D illustrates a digital camera with a television receiving function, which can include an antenna 7014, a shutter button 7015, an image receiving portion 7016, and the like in addition to the above objects.

FIG. 8E illustrates a mobile phone (including a smartphone), which can include a display portion 7001, a microphone 7008, a speaker 7003, a camera 7020, an external connection portion 7021, an operation button 7022, and the like in a housing 7000. .

FIG. 8F illustrates a large television device (also referred to as a television or a television receiver), which can include a housing 7000, a display portion 7001, speakers 7003, and the like. Here, a configuration in which the casing 7000 is supported by a stand 7018 is shown.

The electronic devices illustrated in FIGS. 8A to 8F can have a variety of functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, etc., a function for controlling processing by various software (programs) , Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read program or data recorded in recording medium A function of displaying on the display portion can be provided. Further, in an electronic device having a plurality of display units, one display unit mainly displays image information and another one display unit mainly displays character information, or the plurality of display units consider parallax. It is possible to have a function of displaying a three-dimensional image, etc. by displaying the obtained image. Furthermore, in an electronic device having an image receiving unit, a function for capturing a still image, a function for capturing a moving image, a function for correcting a captured image automatically or manually, and a captured image on a recording medium (externally or incorporated in a camera) A function of saving, a function of displaying a photographed image on a display portion, and the like can be provided. Note that the functions of the electronic devices illustrated in FIGS. 8A to 8F are not limited to these, and the electronic devices can have various functions.

FIG. 8G illustrates a smart watch, which includes a housing 7000, a display portion 7001, operation buttons 7022 and 7023, a connection terminal 7024, a band 7025, a clasp 7026, and the like.

A display portion 7001 mounted on a housing 7000 that also serves as a bezel portion has a non-rectangular display region. The display portion 7001 can display an icon 7027 representing time, other icons 7028, and the like. The display unit 7001 may be a touch panel (input / output device) equipped with a touch sensor (input device).

Note that the smart watch illustrated in FIG. 8G can have a variety of functions. For example, a function for displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function for displaying a calendar, date or time, etc., a function for controlling processing by various software (programs) , Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read program or data recorded in recording medium A function of displaying on the display portion can be provided.

In addition, a speaker, a sensor (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current are included in the housing 7000. , Voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared measurement function), microphone, and the like.

Note that the light-emitting device which is one embodiment of the present invention and the display device including the light-emitting element which is one embodiment of the present invention can be used for each display portion of the electronic device described in this embodiment and display with high color purity. Is possible.

Moreover, as an electronic device to which the light-emitting device is applied, a foldable portable information terminal as illustrated in FIGS. 9A to 9C can be given. FIG. 9A illustrates the portable information terminal 9310 in a developed state. FIG. 9B illustrates the portable information terminal 9310 in a state in which the state is changing from one of the expanded state and the folded state to the other. Further, FIG. 9C illustrates the portable information terminal 9310 in a folded state. The portable information terminal 9310 is excellent in portability in the folded state and excellent in display listability due to a seamless wide display area in the expanded state.

The display portion 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display unit 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). In addition, the display portion 9311 can be reversibly deformed from the expanded state to the folded state by bending the two housings 9315 via the hinge 9313. The light-emitting device of one embodiment of the present invention can be used for the display portion 9311. In addition, display with good color purity is possible. A display region 9312 in the display portion 9311 is a display region located on a side surface of the portable information terminal 9310 in a folded state. In the display area 9312, information icons, frequently used applications, program shortcuts, and the like can be displayed, so that information can be confirmed and applications can be activated smoothly.

Note that the structure described in this embodiment can be combined as appropriate with any of the structures described in the other embodiments.

100 Vapor deposition source 101, 101a, 101b 1st crucible 102 2nd crucible 102T 2nd crucible (upper part)
102B Second crucible (bottom)
103 heater 104 vapor deposition material 104a vapor deposition material 104b new vapor deposition material 108a, 108b transfer robot 109 opening 200 substrate 201 film formation chamber 202, 203 substrate transfer chamber 204 crucible transfer chamber 205 crucible exchange chamber 206 vapor deposition source holder 207 vapor deposition source 208a First crucible 208b Second crucible 209 Crucible replacement robot 210 First crucible storage base 211 Door 221 Substrate fixing part 222 Moving mechanism 223 Mask 224 Moving table 500a-500j Gate 501, Gate 502 Crucible transfer chamber 503 Pre-processing Chambers 504, 514 Transfer chambers 506, 509, 512 Deposition chamber 510 Deposition source holder 517 Sealing substrate load chamber 518 Sealing chamber 519 Sealing / unloading chamber 520 Substrate loading chamber (or loading chamber)
507 crucible exchange chamber 530 sealing substrate stock chamber 1101 first electrode 1102 second electrode 1103 EL layer 1103a, 1103b EL layer 1104 charge generation layer 1111, 1111a, 1111b hole injection layer 1112, 1112a, 1112b hole transport layer 1113, 1113a, 1113b Light emitting layer 1114, 1114a, 1114b Electron transport layer 1115, 1115a, 1115b Electron injection layer 1202 Transistor (FET)
1203R, 1203G, 1203B, 1203W Light emitting element 1204 EL layer 1205 Second substrate 1206R, 1206G, 1206B Color filter 1206R ′, 1206G ′, 1206B ′ Color filter 1207 First electrode 1208 Second electrode 1209 Black layer (black matrix) )
1210R, 1210G Conductive layer 1301 First substrate 1302 Pixel portion 1303 Driver circuit portion (source line driver circuit)
1304a, 1304b Drive circuit portion (gate line drive circuit)
1305 Sealing material 1306 Second substrate 1307 Lead wiring 1308 FPC
1309 FET
1310 FET
1311 FET
1312 FET
1313 First electrode 1314 Insulator 1315 EL layer 1316 Second electrode 1317 Light emitting element 1318 Space 7000 Case 7001 Display portion 7002 Second display portion 7003 Speaker 7004 LED lamp 7005 Operation key 7006 Connection terminal 7007 Sensor 7008 Microphone 7009 Switch 7010 Infrared port 7011 Recording medium reading unit 7012 Support unit 7013 Earphone 7014 Antenna 7015 Shutter button 7016 Image receiving unit 7018 Stand 7020 Camera 7021 External connection unit 7022 and 7023 Operation button 7024 Connection terminal 7025 Band,
7026 Clasp 7027 Icon 7028 Other Time Icon 9310 Portable Information Terminal 9311 Display Unit 9312 Display Area 9313 Hinge 9315 Case

Claims (7)

A deposition chamber having a deposition source and means for moving the deposition source;
The said vapor deposition source has a 1st crucible which has a vapor deposition material, and a 2nd crucible provided with the said 1st crucible inside, The manufacturing apparatus characterized by the above-mentioned. A carry-in chamber, a transfer chamber connected to the carry-in chamber, and a plurality of film forming chambers connected to the transfer chamber,
At least one of the film forming chambers has a vapor deposition source and means for moving the vapor deposition source,
The said vapor deposition source has a 1st crucible which has a vapor deposition material, and a 2nd crucible provided with the said 1st crucible inside, The manufacturing apparatus characterized by the above-mentioned. In claim 1 or claim 2,
The apparatus for heating the vapor deposition source is performed by a heating means provided in the second crucible. In any one of Claim 1 thru | or 3,
The first crucible is made of a material having a high infrared emissivity, and the second crucible is made of a material having a high thermal conductivity. In claim 4,
The material having high infrared emissivity is oxide-based alumina, zirconia, barium titanate, carbide-based silicon carbide, nitride-based silicon nitride, aluminum nitride, boron nitride, halide-based fluorite, or their A manufacturing apparatus characterized by being a composite of materials. In claim 4 or claim 5,
The manufacturing apparatus characterized in that the material having high thermal conductivity is a metal material such as silver, copper, gold, platinum, aluminum, titanium, iron, nickel, iridium, or an alloy thereof. In any one of Claims 1 thru | or 6,
The manufacturing apparatus characterized by exchanging the vapor deposition material of the vapor deposition source by exchanging the first crucible with another first crucible having the vapor deposition material in the same manner as the first crucible.

Images