JPH0541698B2 - - Google Patents
Info
- Publication number
- JPH0541698B2 JPH0541698B2 JP13750988A JP13750988A JPH0541698B2 JP H0541698 B2 JPH0541698 B2 JP H0541698B2 JP 13750988 A JP13750988 A JP 13750988A JP 13750988 A JP13750988 A JP 13750988A JP H0541698 B2 JPH0541698 B2 JP H0541698B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crucible body
- evaporation source
- aluminum
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001704 evaporation Methods 0.000 claims description 47
- 230000008020 evaporation Effects 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 24
- 238000007740 vapor deposition Methods 0.000 claims description 21
- 239000011247 coating layer Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 230000009257 reactivity Effects 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 27
- 229910052782 aluminium Inorganic materials 0.000 description 27
- 239000010409 thin film Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば真空蒸着、クラスタ・イオ
ンビーム蒸着等において蒸着材料を加熱し蒸発さ
せるために用いられる蒸発源用るつぼに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a crucible for an evaporation source used for heating and evaporating a deposition material in, for example, vacuum evaporation, cluster ion beam evaporation, or the like.
従来の蒸発源用るつぼが用いられているクラス
タ・イオンビーム蒸着法による薄膜形成方法とし
ては、例えば特公昭54−9592号公報に記載された
ものがある。この種の薄膜蒸着方法は真空槽内に
おいて、蒸着すべき物質の蒸気を基板に噴出し
て、この蒸気中の多数の原子が緩く結合したクラ
スタ（塊状原子集団）を生成し、クラスタに電子
のシヤワーを浴びせてクラスタをそのうちの１個
の原子がイオン化されたクラスタ・イオンにし、
さらにクラスタ・イオンを加速して基板に衝突さ
せ、これにより基板に薄膜を蒸着形成するもので
ある。
An example of a thin film forming method using a cluster ion beam evaporation method using a conventional evaporation source crucible is described in Japanese Patent Publication No. 54-9592. In this type of thin film deposition method, the vapor of the substance to be vaporized is ejected onto the substrate in a vacuum chamber, and a large number of atoms in this vapor form loosely bonded clusters (massive atomic groups), and the clusters are filled with electrons. Shower the cluster to form a cluster ion in which one atom is ionized,
The cluster ions are further accelerated to collide with the substrate, thereby depositing a thin film on the substrate.
このような薄膜形成方法を実施するための蒸発
源用るつぼとしては第３図に示すものがあつた。
また第４図は従来の蒸発源用るつぼが用いられて
いる薄膜形成装置を示す概略構成図、第５図は第
４図に示した薄膜形成装置の主要部を一部断面で
示す分解斜視図である。第３図〜第５図におい
て、１は直径１mm〜２mmのノズル１ａ、蓋１ｂ及
び拡散遮蔽壁１ｃが設けられたるつぼ本体、２は
るつぼ本体１に充填されているアルミニウムAl
等の蒸着物質、４は所定の真空度に保持された真
空槽、５は図示しない真空排気装置に接続されて
おり、真空槽４内の排気を行なう排気通路、６は
排気通路５を開閉する真空用バルブ、７はるつぼ
本体１に熱電子を照射してるつぼ本体１を加熱す
る蒸発源加熱用フイラメント、８は蒸発源加熱フ
イラメント７からの輻射熱を遮断する熱シールド
板であり、るつぼ本体１、蒸発源加熱フイラメン
ト７及び熱シールド板８から基板１８に蒸着すべ
き物質の蒸気を真空槽４内に噴出してクラスタを
生成する蒸気発生源９が構成されている。又、１
０はイオン化用の熱電子１３を放出するイオン化
電子放出フイラメント、１１はイオン化電子放出
フイラメント１０から放出された熱電子１３を加
速する電子引き出し電極である。熱シールド板８
はイオン化電子放出フイラメント１０からの輻射
熱を遮断する働きもあり、イオン化電子放出フイ
ラメント１０、電子引き出し電極１１及び熱シー
ルド板８から蒸気発生源９からのクラスタをイオ
ン化するイオン化手段１２が構成されている。１
４は電子引き出し電極１１との間に電圧が印加さ
れ、イオン化されたクラスタ・イオンを加速して
これをイオン化されていない中性クラスタ１５と
ともに基板１８に衝突させて薄膜を蒸着させる加
速電極、１７はクラスタ・イオン１６と中性クラ
スタ１５とからなるクラスタビームである。１９
は熱シールド板８を支持する絶縁支持部材、２０
はるつぼ本体１を支持するるつぼ支持部材、２１
は基板ホルダ２２を支持する絶縁支持部材、２２
は基板１８を支持する基板ホルダ、２３は熱シー
ルド板８を支持する絶縁支持部材、２４は加速電
極１４を支持する絶縁支持部材である。 A crucible for use as an evaporation source for carrying out such a thin film forming method was shown in FIG.
Furthermore, FIG. 4 is a schematic configuration diagram showing a thin film forming apparatus using a conventional evaporation source crucible, and FIG. 5 is an exploded perspective view partially showing a main part of the thin film forming apparatus shown in FIG. 4 in cross section. It is. In FIGS. 3 to 5, 1 is a crucible body provided with a nozzle 1a having a diameter of 1 mm to 2 mm, a lid 1b, and a diffusion shielding wall 1c, and 2 is an aluminum Al filled in the crucible body 1.
4 is a vacuum chamber maintained at a predetermined degree of vacuum, 5 is connected to a vacuum evacuation device (not shown), and is an exhaust passage for evacuating the inside of the vacuum chamber 4; 6 is an opening and closing of the exhaust passage 5; A vacuum valve 7 is an evaporation source heating filament that heats the crucible body 1 by irradiating the crucible body 1 with thermoelectrons, 8 is a heat shield plate that blocks radiant heat from the evaporation source heating filament 7, and the crucible body 1 , a vapor generation source 9 is configured that ejects vapor of a substance to be evaporated onto a substrate 18 from an evaporation source heating filament 7 and a heat shield plate 8 into a vacuum chamber 4 to generate clusters. Also, 1
0 is an ionized electron emitting filament that emits thermionic electrons 13 for ionization, and 11 is an electron extraction electrode that accelerates thermionic electrons 13 emitted from the ionized electron emitting filament 10. Heat shield plate 8
has the function of blocking radiant heat from the ionized electron emitting filament 10, and the ionization means 12 that ionizes the clusters from the steam generation source 9 is constituted by the ionized electron emitting filament 10, the electron extraction electrode 11, and the heat shield plate 8. . 1
4 is an accelerating electrode 17 to which a voltage is applied between the electron extraction electrode 11 and the ionized cluster ions to cause them to collide with the substrate 18 together with the non-ionized neutral clusters 15 to deposit a thin film; is a cluster beam consisting of cluster ions 16 and neutral clusters 15. 19
is an insulating support member 20 that supports the heat shield plate 8;
Crucible support member 21 that supports the crucible body 1
22 is an insulating support member that supports the substrate holder 22;
23 is an insulating support member that supports the heat shield plate 8; and 24 is an insulating support member that supports the accelerating electrode 14.
次に、従来の蒸発源用るつぼを用いた薄膜形成
装置の動作について説明する。まず、アルミニウ
ム（蒸着物質）２をるつぼ本体１内に充填し、真
空排気装置（図示せず）により真空槽４内の空気
を排気して、真空槽４内を10-6Torr程度の真空
度にする。次いで、蒸発源加熱用フイラメント７
に通電して発熱させ、蒸発源加熱用フイラメント
７からの輻射熱をるつぼ本体１に照射することに
より、又は蒸発源加熱用フイラメント７から放出
される熱電子をるつぼ本体１に衝突させること
（電子衝撃）により、るつぼ本体１内のアルミニ
ウム２を加熱して溶融し蒸発させる。るつぼ本体
１内のアルミニウム２の蒸気圧が0.1〜10Torr程
度になるように昇温すると、ノズル１ａからアル
ミニウムの蒸気が噴出する。この蒸気はるつぼ本
体１と真空槽４との圧力差により断熱膨張してク
ラスタと呼ばれる多数の原子が緩く結合した塊状
原子集団となる。次いで、電子引き出し電極１１
がクラスタビーム１７にイオン化電子放出フイラ
メント１０から放出された熱電子１３を衝突さ
せ、一部のクラスタを一個の原子がイオン化され
たクラスタ・イオン１６にする。このクラスタ・
イオン１６は加速電極１４と電子引き出し電極１
１とにより形成された電界により適度に加速さ
れ、イオン化されていない中性クラスタ１５はる
つぼ本体１から噴出されるときの運動エネルギで
基板１８に衝突し、これにより基板１８上にアル
ミニウムの薄膜が蒸着形成される。 Next, the operation of a thin film forming apparatus using a conventional evaporation source crucible will be explained. First, aluminum (vapor deposition material) 2 is filled into the crucible body 1, and the air in the vacuum chamber 4 is evacuated using a vacuum evacuation device (not shown), so that the vacuum level in the vacuum chamber 4 is approximately 10 -6 Torr. Make it. Next, the filament 7 for heating the evaporation source
By applying electricity to generate heat and irradiating the crucible body 1 with radiant heat from the evaporation source heating filament 7, or by causing thermoelectrons emitted from the evaporation source heating filament 7 to collide with the crucible body 1 (electron impact). ), the aluminum 2 in the crucible body 1 is heated to melt and evaporate. When the temperature of the aluminum 2 in the crucible body 1 is raised to about 0.1 to 10 Torr, aluminum vapor is ejected from the nozzle 1a. This vapor expands adiabatically due to the pressure difference between the crucible body 1 and the vacuum chamber 4, and becomes a lumpy atomic group called a cluster, in which a large number of atoms are loosely bonded. Next, the electron extraction electrode 11
makes the cluster beam 17 collide with thermionic electrons 13 emitted from the ionized electron emitting filament 10, and some of the clusters become cluster ions 16 in which one atom is ionized. This cluster
The ions 16 are connected to the acceleration electrode 14 and the electron extraction electrode 1
The non-ionized neutral clusters 15 are moderately accelerated by the electric field formed by the crucible body 1 and collide with the substrate 18 with the kinetic energy when they are ejected from the crucible body 1. As a result, a thin aluminum film is formed on the substrate 18. Formed by vapor deposition.
高蒸着速度を得るため、るつぼ本体１は蒸着物
質２であるアルミニウムと濡れ性が強くかつ反応
性の弱い材質、例えば窒化硅素（BN）などで構
成され、蒸着物質２の蒸発表面積が大きくとれる
構造となつている。このため、るつぼ本体１内の
アルミニウム２を加熱して蒸発させた時に、るつ
ぼ本体１の急激な昇温や降温等により、アルミニ
ウム２がるつぼ本体１内面をはい上り、ノズル１
ａよりあふれ出す場合がある。 In order to obtain a high evaporation rate, the crucible body 1 is made of a material that has strong wettability and low reactivity with aluminum, which is the evaporation substance 2, such as silicon nitride (BN), and has a structure that allows a large evaporation surface area for the evaporation substance 2. It is becoming. Therefore, when the aluminum 2 in the crucible body 1 is heated and evaporated, the aluminum 2 crawls up the inner surface of the crucible body 1 due to the rapid temperature rise or fall of the crucible body 1, and the nozzle 1
It may overflow from a.
上記のような構成の従来の薄膜蒸着装置に用い
る蒸発源用るつぼは、るつぼ材としてアルミニウ
ム等の蒸着物質２と反応性が弱く、濡れ性が強い
ものを用いていたため、アルミニウム２がノズル
１ａからあるれ出した場合に、るつぼ本体１の外
側表面を濡らし、このアルミニウム２が蒸発する
ことで蒸気発生源９の動作が不安定になると共
に、蒸気発生源９の構成部品とアルミニウム２の
蒸気が反応し、蒸気発生源９の寿命が劣化すると
いう問題点があつた。またるつぼ本体１の外側表
面を濡らした蒸気が蒸発することにより、クラス
タ内に単原子が混入し膜質及び膜厚分布に影響を
与える等の問題点もあつた。
The crucible for the evaporation source used in the conventional thin film deposition apparatus configured as described above uses a crucible material that is weakly reactive with the vapor deposition substance 2 such as aluminum and has strong wettability. If the aluminum 2 leaks out, the outer surface of the crucible body 1 will be wetted, and the aluminum 2 will evaporate, making the operation of the steam generation source 9 unstable, and causing the vapor from the components of the steam generation source 9 and the aluminum 2 to evaporate. There was a problem in that the reaction occurred and the life of the steam generation source 9 was deteriorated. There were also other problems, such as evaporation of the steam that wetted the outer surface of the crucible body 1, which caused monatomic atoms to be mixed into the clusters, which affected the film quality and film thickness distribution.
この発明は上記のような問題点を解消するため
になされたもので、蒸着物質２がるつぼ本体１の
内面をはい上り、ノズル１ａからあるれ出した場
合でも、蒸気発生源９の動作の安定性と蒸気発生
源９の長寿命化を図ると共に、蒸着膜の膜質及び
膜厚分布が一定にできる蒸発源用るつぼを得るこ
とを目的とする。 This invention was made to solve the above-mentioned problems, and even when the vapor deposition substance 2 crawls up the inner surface of the crucible body 1 and comes out from the nozzle 1a, the operation of the steam generation source 9 is stabilized. It is an object of the present invention to obtain a crucible for an evaporation source, which can improve the performance and the life of the vapor generation source 9, and can make the quality and thickness distribution of the evaporated film constant.
この発明に係る蒸発源用るつぼは、るつぼ本体
の外側表面に蒸着物質と濡れ性が弱いか又は反応
性の強い材料によるコーテイン層を備えたもので
ある。
The crucible for evaporation source according to the present invention is provided with a coatein layer made of a material that has weak wettability or strong reactivity with the vapor deposition substance on the outer surface of the crucible body.
この発明における蒸発源用るつぼは、るつぼ本
体の外側表面に設けられたコーテイング層が蒸着
物質と濡れ性の弱い場合には、蒸着物質がるつぼ
本体の外側表面を覆うことがなく、又コーテイン
グ層が蒸着物質と反応性の強い場合には蒸着物質
がるつぼ本体の外側表面を覆つた時点でコーテイ
ング層と急激に反応を起こすため、蒸着物質が蒸
発を起こすこともない。
In the crucible for evaporation source according to the present invention, when the coating layer provided on the outer surface of the crucible body has weak wettability with the vapor deposition substance, the vapor deposition substance does not cover the outer surface of the crucible body, and the coating layer If the material is highly reactive with the deposition material, it will react rapidly with the coating layer once it covers the outer surface of the crucible body, so that the deposition material will not evaporate.
以下、この発明の一実施例による蒸発源用るつ
ぼを図について詳細に説明する。
Hereinafter, a crucible for an evaporation source according to an embodiment of the present invention will be described in detail with reference to the drawings.
第１図はこの発明の一実施例に係る蒸発源用る
つぼを示す概略構成図、第２図はこの蒸発源用る
つぼを用いた薄膜形成装置を示す概略構成図であ
る。なお、第１図、第２図において、第３図〜第
５図と同様の機能を果たす部分については同一の
符号を付し、その説明は省略する。３はるつぼ本
体１の外側表面の全体に施されたコーテイング層
であり、るつぼ本体１内に充填された蒸着物質２
と濡れ性が弱いか又は反応性が強い材料で構成さ
れている。この実施例では蒸着物質２がアルミニ
ウムでるつぼ本体１が窒化硅素（BN）、コーテ
イング層３がアルミニウム２と反応性の強いタン
グステン（Ｗ）で構成されている。 FIG. 1 is a schematic configuration diagram showing an evaporation source crucible according to an embodiment of the present invention, and FIG. 2 is a schematic configuration diagram showing a thin film forming apparatus using this evaporation source crucible. Note that in FIGS. 1 and 2, parts that perform the same functions as those in FIGS. 3 to 5 are designated by the same reference numerals, and explanations thereof will be omitted. 3 is a coating layer applied to the entire outer surface of the crucible body 1, and a coating layer 3 is a coating layer applied to the entire outer surface of the crucible body 1;
and materials with weak wettability or strong reactivity. In this embodiment, the vapor deposition material 2 is made of aluminum, the crucible body 1 is made of silicon nitride (BN), and the coating layer 3 is made of tungsten (W), which is highly reactive with the aluminum 2.
次に、この発明の一実施例に係る蒸発源用るつ
ぼを用いた薄膜形成装置の動作について説明す
る。まず、アルミニウム（蒸着物質）２をるつぼ
本体１内に充填し、真空排気装置（図示せず）に
より真空槽４内の空気を排気して、真空槽４内を
10-6Torr程度の真空度にする。次いで、蒸発源
加熱用フイラメント７に通電して発熱させ、蒸発
源加熱用フイラメント７からの輻射熱をるつぼ本
体１に照射することにより、又は蒸発源加熱用フ
イラメント７から放出される熱電子をるつぼ本体
１に衝突させること（電子衝撃）により、るつぼ
本体１内のアルミニウム２を加熱して溶融し蒸発
させる。るつぼ本体１内のアルミニウム２の蒸気
圧が0.1〜10Torr程度になるように昇温すると、
ノズル１ａからアルミニウムの蒸気が噴出する。
この蒸気はるつぼ本体１と真空槽４との圧力差に
より断熱膨張してクラスタと呼ばれる多数の原子
が緩く結合した塊状原子集団となる。次いで、電
子引き出し電極１１がクラスタビーム１７にイオ
ン化電子放出フイラメント１０から放出された熱
電子１３を衝突させ、一部のクラスタを一個の原
子がイオン化されたクラスタ・イオン１６にす
る。このクラスタ・イオン１６は加速電極１４と
電子引き出し電極１１とにより形成された電界に
より適度に加速され、イオン化されていない中性
クラスタ１５はるつぼ本体１から噴出されるとき
の運動エネルギで基板１８に衝突し、これにより
基板１８上にアルミニウムの薄膜が蒸着形成され
る。従来例と同様、高蒸着速度を得るため、るつ
ぼ本体１は蒸着物質２であるアルミニウムと濡れ
性が強くかつ反応性の弱い材質、例えば窒化硅素
（BN）で構成されている。さらに、この実施例
ではるつぼ本体１の外側表面にアルミニウム２と
反応性の強いタングステン３がコーテイングされ
ている。このため、るつぼ本体１内のアルミニウ
ム２を加熱して蒸発させた時にるつぼ本体１の急
激な昇温や降温等により、アルミニウム２がるつ
ぼ本体１内面をはい上り、ノズル１ａよりあふれ
出した場合でも、アルミニウム２がコーテイング
層３のタングステン３と急激に反応するため、あ
ふれ出したアルミニウム２が蒸発することはな
い。 Next, the operation of a thin film forming apparatus using an evaporation source crucible according to an embodiment of the present invention will be described. First, aluminum (vapor deposition material) 2 is filled into the crucible body 1, and the air inside the vacuum chamber 4 is evacuated using a vacuum evacuation device (not shown).
Create a vacuum of about 10 -6 Torr. Next, the filament 7 for heating the evaporation source is energized to generate heat, and the crucible body 1 is irradiated with radiant heat from the filament 7 for heating the evaporation source, or thermionic electrons emitted from the filament 7 for heating the evaporation source are transferred to the crucible body 1. 1 (electronic impact), the aluminum 2 in the crucible body 1 is heated, melted, and evaporated. When the temperature of the aluminum 2 in the crucible body 1 is raised to about 0.1 to 10 Torr,
Aluminum vapor is ejected from the nozzle 1a.
This vapor expands adiabatically due to the pressure difference between the crucible body 1 and the vacuum chamber 4, and becomes a lumpy atomic group called a cluster, in which a large number of atoms are loosely bonded. Next, the electron extracting electrode 11 causes the cluster beam 17 to collide with the hot electrons 13 emitted from the ionized electron emitting filament 10, so that some of the clusters become cluster ions 16 in which one atom is ionized. These cluster ions 16 are moderately accelerated by the electric field formed by the accelerating electrode 14 and the electron extraction electrode 11, and the unionized neutral clusters 15 are blown onto the substrate 18 by the kinetic energy when ejected from the crucible body 1. collision, which causes a thin film of aluminum to be deposited on the substrate 18. Similar to the conventional example, in order to obtain a high deposition rate, the crucible body 1 is made of a material that has strong wettability and low reactivity with aluminum, which is the deposition substance 2, such as silicon nitride (BN). Furthermore, in this embodiment, the outer surface of the crucible body 1 is coated with tungsten 3, which is highly reactive with aluminum 2. Therefore, even if the aluminum 2 inside the crucible body 1 is heated and evaporated and the aluminum 2 crawls up the inner surface of the crucible body 1 and overflows from the nozzle 1a due to a sudden temperature rise or fall of the crucible body 1, etc. Since the aluminum 2 rapidly reacts with the tungsten 3 of the coating layer 3, the overflowing aluminum 2 does not evaporate.
従つて、蒸発発生源９の動作が不安定になるこ
とが防止でき、さらに蒸発発生源９の構成部品と
蒸発物質の蒸気が反応して蒸発発生源９の寿命が
劣化するのを防止できる。また、従来例のように
クラスタ内に蒸着物質の単原子が混入するのを防
止し、膜質及び膜厚分布に影響を与えることがな
い。 Therefore, it is possible to prevent the operation of the evaporation source 9 from becoming unstable, and furthermore, it is possible to prevent the component parts of the evaporation source 9 from reacting with the vapor of the evaporation substance, thereby preventing the life of the evaporation source 9 from deteriorating. Further, unlike the conventional example, single atoms of the vapor-deposited substance are prevented from being mixed into the cluster, and the film quality and film thickness distribution are not affected.
なお、上記実施例では蒸着物質２がアルミニウ
ム、るつぼ本体１の材質が窒化硅素（BN）、コ
ーテイング層３がタングステン（Ｗ）である、蒸
着物質２とコーテイング層３との反応性の強い場
合の例を示したが、他の蒸着物質２、るつぼ本体
１、コーテイング層３の組み合わせで、蒸着物質
２とコーテイング層３との反応性が強い場合であ
つてもよく、上記実施例と同様の効果を奏する。 In the above example, the vapor deposition substance 2 is aluminum, the material of the crucible body 1 is silicon nitride (BN), and the coating layer 3 is tungsten (W). Although an example has been shown, the combination of another vapor deposition substance 2, the crucible body 1, and the coating layer 3 may be used, and the reactivity between the vapor deposition substance 2 and the coating layer 3 may be strong, and the same effect as in the above embodiment can be obtained. play.
また、蒸着物質２が銅、るつぼ本体１の材質が
タングステン、コーテイング層３がカーボンとい
つた、蒸着物質２とコーテイング層３との濡れ性
が弱い組み合わせの場合には、るつぼ本体１内の
銅２の加熱時の急激な昇温や降温等により、銅２
がるつぼ本体１の内面をはい上り、ノズル１ａよ
りあふれ出しても、銅２がコーテイング層３を濡
らさない。このため、るつぼ本体１の外側表面を
銅２が覆うことがなく、上記実施例と同様の効果
を奏する。 In addition, in the case of a combination in which the vapor deposition substance 2 is copper, the material of the crucible body 1 is tungsten, and the coating layer 3 is carbon, and the wettability of the vapor deposition substance 2 and the coating layer 3 is weak, the copper in the crucible body 1 is Due to rapid temperature rise or fall during heating of copper 2,
Even if the copper 2 crawls up the inner surface of the crucible body 1 and overflows from the nozzle 1a, the coating layer 3 is not wetted by the copper 2. Therefore, the outer surface of the crucible body 1 is not covered with the copper 2, and the same effect as in the above embodiment is achieved.
また、上記実施例ではるつぼ本体１の外側表面
全体にコーテイング層３を設けているが、場合に
よつては全体にコーテイング層３を設ける必要は
なく、少くともるつぼ本体１におけるノズル１ａ
や蓋１ｂの周辺部の外側表面に設ければ、上記実
施例と同様の効果を奏する。 Further, in the above embodiment, the coating layer 3 is provided on the entire outer surface of the crucible body 1, but in some cases, it is not necessary to provide the coating layer 3 on the entire surface, and at least the nozzle 1a of the crucible body 1
If it is provided on the outer surface of the periphery of the lid 1b, the same effect as in the above embodiment can be obtained.
以上のようにこの発明によれば、基板に蒸着す
べき蒸着物質が内部に充填され、蒸着物質と濡れ
性の強い材料で構成されるるつぼ本体を備える蒸
発源用るつぼにおいて、るつぼ本体の外側表面に
蒸着物質と反応性の強い材料又は濡れ性の弱い材
料で構成されるコーテイング層を備えたことによ
り、蒸着物質がるつぼ本体からあふれ出した場合
にも蒸着物質がコーテイング材と反応するか又は
蒸着物質がるつぼ本体の外側表面を覆うのを防止
でき、あふれ出した蒸着物質が蒸発することもな
く、ICB源動作の安定性とICB源の長寿命化を図
るとともに、蒸着膜の膜質及び膜厚分布が一定に
できる蒸発源用るつぼが得られるという効果があ
る。
As described above, according to the present invention, in a crucible for an evaporation source, which is filled with a vapor deposition substance to be deposited on a substrate and includes a crucible body made of a material having strong wettability with the vapor deposition substance, the outer surface of the crucible body is By equipping the crucible with a coating layer made of a material that is highly reactive with the evaporation material or a material that has weak wettability, even if the evaporation material overflows from the crucible body, the evaporation material will react with the coating material or the deposition will be prevented. This prevents substances from covering the outer surface of the crucible body, prevents overflowing deposition materials from evaporating, and improves the stability of ICB source operation and the long life of the ICB source, as well as improving the quality and thickness of the deposited film. This has the effect of providing a crucible for an evaporation source that can have a constant distribution.
第１図は、この発明の一実施例に係る蒸発源用
るつぼを示す概略構成図、第２図は一実施例に係
る蒸発源用るつぼを使用した薄膜形成装置を示す
概略構成図、第３図は従来の蒸発源用るつぼを示
す概略構成図、第４図は従来の蒸発源用るつぼを
使用した薄膜形成装置を示す概略構成図、第５図
は第４図に示した薄膜形成装置の主要部分を一部
断面で示す分解斜視図である。
１はるつぼ本体、２は蒸着物質、３はコーテイ
ング層、１８は基板である。なお、図中、同一符
号は同一、又は相当部分を示す。
FIG. 1 is a schematic configuration diagram showing an evaporation source crucible according to an embodiment of the present invention, FIG. 2 is a schematic configuration diagram showing a thin film forming apparatus using the evaporation source crucible according to an embodiment, and FIG. The figure is a schematic block diagram showing a conventional evaporation source crucible, FIG. 4 is a schematic block diagram showing a thin film forming apparatus using a conventional evaporation source crucible, and FIG. 5 is a schematic block diagram showing a thin film forming apparatus using the conventional evaporation source crucible. FIG. 2 is an exploded perspective view showing a main part partially in section. 1 is a crucible body, 2 is a vapor deposition material, 3 is a coating layer, and 18 is a substrate. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
れ、上記蒸着物質と濡れ性の強い材料で構成され
るるつぼ本体を備える蒸発源用るつぼにおいて、
上記るつぼ本体の外側表面に、上記蒸着物質と反
応性の強い材料又は濡れ性の弱い材料で構成され
るコーテイング層を備えたことを特徴とする蒸発
源用るつぼ。1. In a crucible for an evaporation source, the crucible is filled with a vapor deposition substance to be deposited on a substrate and includes a crucible body made of a material with strong wettability with the vapor deposition substance,
A crucible for an evaporation source, characterized in that the outer surface of the crucible body is provided with a coating layer made of a material having strong reactivity with the vapor deposition substance or a material having weak wettability with the vapor deposition substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13750988A JPH01306555A (en) | 1988-06-06 | 1988-06-06 | Crucible for evaporation source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13750988A JPH01306555A (en) | 1988-06-06 | 1988-06-06 | Crucible for evaporation source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01306555A JPH01306555A (en) | 1989-12-11 |
| JPH0541698B2 true JPH0541698B2 (en) | 1993-06-24 |
Family
ID=15200332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13750988A Granted JPH01306555A (en) | 1988-06-06 | 1988-06-06 | Crucible for evaporation source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01306555A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201608496UA (en) * | 2016-10-11 | 2018-05-30 | Au Optronics Corp | Crucible |
-
1988
- 1988-06-06 JP JP13750988A patent/JPH01306555A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01306555A (en) | 1989-12-11 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |